CN101656294A - 包括针孔底切区域的器件和工艺 - Google Patents
包括针孔底切区域的器件和工艺 Download PDFInfo
- Publication number
- CN101656294A CN101656294A CN200910166517A CN200910166517A CN101656294A CN 101656294 A CN101656294 A CN 101656294A CN 200910166517 A CN200910166517 A CN 200910166517A CN 200910166517 A CN200910166517 A CN 200910166517A CN 101656294 A CN101656294 A CN 101656294A
- Authority
- CN
- China
- Prior art keywords
- conductive region
- etching
- region
- dielectric
- pin hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 25
- 239000004065 semiconductor Substances 0.000 claims description 45
- 239000000463 material Substances 0.000 claims description 30
- 239000010409 thin film Substances 0.000 claims description 24
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 239000004020 conductor Substances 0.000 claims description 9
- 238000000151 deposition Methods 0.000 abstract description 6
- 238000005441 electronic device fabrication Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 description 115
- 239000010410 layer Substances 0.000 description 38
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 21
- 239000010949 copper Substances 0.000 description 18
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 17
- 229910052802 copper Inorganic materials 0.000 description 17
- 239000000758 substrate Substances 0.000 description 13
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 12
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 11
- 229910052737 gold Inorganic materials 0.000 description 11
- 239000010931 gold Substances 0.000 description 11
- 239000000203 mixture Substances 0.000 description 11
- 239000004411 aluminium Substances 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- 239000011651 chromium Substances 0.000 description 10
- 229910052759 nickel Inorganic materials 0.000 description 10
- 239000010936 titanium Substances 0.000 description 10
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 9
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 9
- 229910052804 chromium Inorganic materials 0.000 description 9
- 229910052719 titanium Inorganic materials 0.000 description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 8
- 239000003990 capacitor Substances 0.000 description 8
- 229910052709 silver Inorganic materials 0.000 description 8
- 239000004332 silver Substances 0.000 description 8
- 238000005260 corrosion Methods 0.000 description 7
- 230000007797 corrosion Effects 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000007639 printing Methods 0.000 description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 229920001940 conductive polymer Polymers 0.000 description 6
- 229910052697 platinum Inorganic materials 0.000 description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 229910052738 indium Inorganic materials 0.000 description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 5
- 229920000123 polythiophene Polymers 0.000 description 5
- 238000004528 spin coating Methods 0.000 description 5
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 4
- 239000002322 conducting polymer Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 229910017840 NH 3 Inorganic materials 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229920000728 polyester Polymers 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000007738 vacuum evaporation Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000003618 dip coating Methods 0.000 description 2
- 239000012153 distilled water Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000002305 electric material Substances 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 239000005357 flat glass Substances 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229920003217 poly(methylsilsesquioxane) Polymers 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 229930192474 thiophene Natural products 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000012795 verification Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- YMMGRPLNZPTZBS-UHFFFAOYSA-N 2,3-dihydrothieno[2,3-b][1,4]dioxine Chemical compound O1CCOC2=C1C=CS2 YMMGRPLNZPTZBS-UHFFFAOYSA-N 0.000 description 1
- 229920003026 Acene Polymers 0.000 description 1
- VEAHHGDAQKXNNG-UHFFFAOYSA-H C(C=1C(C(=O)[O-])=CC=CC1)(=O)[O-].[Zr+4].[Ba+2].C(C=1C(C(=O)[O-])=CC=CC1)(=O)[O-].C(C=1C(C(=O)[O-])=CC=CC1)(=O)[O-] Chemical compound C(C=1C(C(=O)[O-])=CC=CC1)(=O)[O-].[Zr+4].[Ba+2].C(C=1C(C(=O)[O-])=CC=CC1)(=O)[O-].C(C=1C(C(=O)[O-])=CC=CC1)(=O)[O-] VEAHHGDAQKXNNG-UHFFFAOYSA-H 0.000 description 1
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical class C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- 229920001665 Poly-4-vinylphenol Polymers 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000007605 air drying Methods 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- -1 aphthacene Chemical compound 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000000572 ellipsometry Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N ferric oxide Chemical compound O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229920002457 flexible plastic Polymers 0.000 description 1
- WSFSSNUMVMOOMR-UHFFFAOYSA-N formaldehyde Substances O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 229910003472 fullerene Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000813 microcontact printing Methods 0.000 description 1
- JESXATFQYMPTNL-UHFFFAOYSA-N mono-hydroxyphenyl-ethylene Natural products OC1=CC=CC=C1C=C JESXATFQYMPTNL-UHFFFAOYSA-N 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 1
- 150000002964 pentacenes Chemical class 0.000 description 1
- 125000002080 perylenyl group Chemical class C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Chemical class C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical class N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000193 polymethacrylate Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000001314 profilometry Methods 0.000 description 1
- 238000007634 remodeling Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/481—Insulated gate field-effect transistors [IGFETs] characterised by the gate conductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/80—Constructional details
- H10K10/82—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
金属 | 蚀刻剂 | 比例(体积) | 备注 |
铝 | H2O/HF | 1∶1 | |
铝 | HCl/HNO3/HF | 1∶1∶1 | |
锑 | H2O/HCl/HNO3 | 1∶1∶1 | |
锑 | H2O/HF/HNO3 | 90∶1∶10 | |
铋 | H2O/HF | 10∶1 | |
铬 | H2O/H2O2 | 3∶1 | |
铜 | H2O/HNO3 | 1∶5 | |
金 | HCl/HNO3 | 3∶1 | 热 |
铟 | HCl/HNO3 | 3∶1 | 热 |
铁 | H2O/HCl | 1∶1 | |
镍 | HNO3/醋酸/丙酮 | 1∶1∶1 | |
镍 | HF/HNO3 | 1∶1 | |
铂 | HCl/HNO3 | 3∶1 | 热 |
银 | NH3OH/H2O2 | 1∶1 | |
钛 | H2O/HF/HNO3 | 50∶1∶1 | |
钛 | H2O/HF/H2O2 | 20∶1∶1 |
蚀刻剂 | Al | AU | Cr | Cu | Ni | Si | Si3N4 | SiO2 | Ti | W | GaAs | Ta/TaN |
铝A | 蚀刻 | ok | 蚀刻 | 蚀刻 | 蚀刻 | surfox | 轻微 | ok | ok | ok | 蚀刻 | surfox |
铝D | 蚀刻 | ok | 轻微 | ok | ok | ok | 轻微 | ok | ok | ok | ok | ok |
铬蚀刻剂1020 | 蚀刻 | ok | 蚀刻 | 蚀刻 | 蚀刻 | surfox | ok | ok | ok | ok | 蚀刻 | surfox |
铬蚀刻剂CRE-473 | 蚀刻 | ok | 蚀刻 | 蚀刻 | 轻微 | ok | ok | ok | 蚀刻 | ok | 蚀刻 | ok |
铬蚀刻剂TFD | 蚀刻 | ok | 蚀刻 | 蚀刻 | 蚀刻 | surfox | ok | ok | ok | ok | 蚀刻 | surfox |
铜蚀刻剂100 | 蚀刻 | ok | 轻微 | 蚀刻 | 蚀刻 | ok | ok | ok | 轻微 | ok | 蚀刻 | ok |
铜蚀刻剂200 | 蚀刻 | ok | 轻微 | 蚀刻 | 蚀刻 | ok | ok | ok | 轻微 | ok | 蚀刻 | ok |
铜蚀刻剂APS-100 | ok | ok | ok | 蚀刻 | 蚀刻 | ok | ok | ok | ok | 轻微 | NA | ok |
GE-8110 | 蚀刻 | 蚀刻 | ok | 腐蚀 | ok | ok | ok | ok | ok | ok | 蚀刻 | ok |
GE-8111 | 蚀刻 | 蚀刻 | ok | 腐蚀 | ok | ok | 轻微 | ok | ok | ok | 蚀刻 | ok |
GE-8148 | 蚀刻 | 蚀刻 | ok | 腐蚀 | ok | ok | ok | ok | ok | ok | 蚀刻 | ok |
金蚀刻剂TFA | 蚀刻 | 蚀刻 | ok | 腐蚀 | 轻微 | ok | ok | ok | ok | ok | 蚀刻 | ok |
镍镉蚀刻剂TFC | 蚀刻 | ok | 蚀刻 | 蚀刻 | 蚀刻 | surfox | ok | ok | ok | ok | 蚀刻 | surfox |
镍镉蚀刻剂TFN | 蚀刻 | ok | 蚀刻 | 蚀刻 | 蚀刻 | surfox | ok | ok | ok | ok | 蚀刻 | surfox |
镍蚀刻剂TFB | 蚀刻 | ok | 蚀刻 | 蚀刻 | 蚀刻 | surfox | ok | ok | ok | ok | 蚀刻 | surfox |
镍蚀刻剂TFG | 蚀刻 | ok | ok | ok | 蚀刻 | ok | ok | ok | ok | ok | ok | ok |
镍蚀刻剂型I | 蚀刻 | ok | 轻微 | 蚀刻 | 蚀刻 | ok | ok | ok | 轻微 | ok | 蚀刻 | ok |
银蚀刻剂TFS | 蚀刻 | 蚀刻 | ok | 腐蚀 | 轻微 | ok | ok | ok | ok | ok | 蚀刻 | ok |
氮化钽蚀刻剂III | 蚀刻 | ok | 蚀刻 | 蚀刻 | 蚀刻 | 蚀刻 | ok | 蚀刻 | 蚀刻 | ok | 蚀刻 | 蚀刻 |
氮化钽SIE-8607 | 蚀刻 | ok | 蚀刻 | 蚀刻 | 蚀刻 | 蚀刻 | ok | 蚀刻 | 蚀刻 | ok | 蚀刻 | 蚀刻 |
钛蚀刻剂TFT | 蚀刻 | ok | 蚀刻 | ok | ok | ok | 蚀刻 | 蚀刻 | 蚀刻 | ok | ok | ok |
钛蚀刻剂TFTN | 蚀刻 | ok | 蚀刻 | 轻微 | 轻微 | ok | ok | ok | 蚀刻 | ok | 蚀刻 | ok |
Ti-钨TiW-30 | ok | ok | ok | 蚀刻 | 轻微 | ok | ok | ok | 轻微 | 轻微 | 蚀刻 | ok |
钨蚀刻剂TFW | 蚀刻 | ok | 蚀刻 | ok | ok | 轻微 | ok | 轻微 | ok | 蚀刻 | 蚀刻 | ok |
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/193249 | 2008-08-18 | ||
US12/193,249 US7821068B2 (en) | 2008-08-18 | 2008-08-18 | Device and process involving pinhole undercut area |
Publications (1)
Publication Number | Publication Date |
---|---|
CN101656294A true CN101656294A (zh) | 2010-02-24 |
Family
ID=41262208
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200910166517A Pending CN101656294A (zh) | 2008-08-18 | 2009-08-17 | 包括针孔底切区域的器件和工艺 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7821068B2 (zh) |
EP (1) | EP2157629A3 (zh) |
JP (1) | JP2010045369A (zh) |
KR (1) | KR20100021975A (zh) |
CN (1) | CN101656294A (zh) |
CA (1) | CA2675083C (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108039338A (zh) * | 2017-11-24 | 2018-05-15 | 华中科技大学 | 一种消除介质层针孔缺陷影响的方法 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101070289B1 (ko) * | 2009-12-30 | 2011-10-06 | 주식회사 하이닉스반도체 | 반도체 장치 제조방법 |
US9076975B2 (en) | 2010-04-27 | 2015-07-07 | Xerox Corporation | Dielectric composition for thin-film transistors |
TWI445180B (zh) * | 2011-09-28 | 2014-07-11 | E Ink Holdings Inc | 陣列基板及使用其之顯示裝置 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070018240A1 (en) * | 2005-07-25 | 2007-01-25 | Freescale Semiconductor, Inc. | Electronic device including discontinuous storage elements |
US20070063180A1 (en) * | 2005-09-07 | 2007-03-22 | Elpida Memory, Inc. | Electrically rewritable non-volatile memory element and method of manufacturing the same |
US20070128758A1 (en) * | 2005-12-01 | 2007-06-07 | Keisuke Tanaka | Semiconductor device and method for fabricating the same |
US20070145453A1 (en) * | 2005-12-23 | 2007-06-28 | Xerox Corporation | Dielectric layer for electronic devices |
US20070247064A1 (en) * | 2000-02-16 | 2007-10-25 | Idemitsu Kosan Co., Ltd. | Actively driven organic el device and manufacturing method thereof |
CN101093861A (zh) * | 2006-06-21 | 2007-12-26 | 国际商业机器公司 | Mim电容器器件及其制造方法 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2707959A1 (de) | 1977-02-24 | 1978-08-31 | Eberhard Loeffelholz | Skistock und skihandschuh halte- und fangvorrichtung |
JPS61183972A (ja) * | 1985-02-08 | 1986-08-16 | Matsushita Electric Ind Co Ltd | 薄膜半導体装置の製造方法 |
US5354695A (en) * | 1992-04-08 | 1994-10-11 | Leedy Glenn J | Membrane dielectric isolation IC fabrication |
JP3200639B2 (ja) * | 1992-05-19 | 2001-08-20 | カシオ計算機株式会社 | 薄膜トランジスタパネルの製造方法 |
TW232751B (en) * | 1992-10-09 | 1994-10-21 | Semiconductor Energy Res Co Ltd | Semiconductor device and method for forming the same |
US5424233A (en) * | 1994-05-06 | 1995-06-13 | United Microflectronics Corporation | Method of making electrically programmable and erasable memory device with a depression |
US6107117A (en) | 1996-12-20 | 2000-08-22 | Lucent Technologies Inc. | Method of making an organic thin film transistor |
US6331722B1 (en) * | 1997-01-18 | 2001-12-18 | Semiconductor Energy Laboratory Co., Ltd. | Hybrid circuit and electronic device using same |
JP2001281695A (ja) * | 2000-03-30 | 2001-10-10 | Sharp Corp | 薄膜静電容量の製造方法および液晶表示装置 |
JP4854866B2 (ja) * | 2001-04-27 | 2012-01-18 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US6770904B2 (en) | 2002-01-11 | 2004-08-03 | Xerox Corporation | Polythiophenes and electronic devices generated therefrom |
US6621099B2 (en) | 2002-01-11 | 2003-09-16 | Xerox Corporation | Polythiophenes and devices thereof |
US6949762B2 (en) | 2002-01-11 | 2005-09-27 | Xerox Corporation | Polythiophenes and devices thereof |
US20030227014A1 (en) | 2002-06-11 | 2003-12-11 | Xerox Corporation. | Process for forming semiconductor layer of micro-and nano-electronic devices |
JP3532188B1 (ja) * | 2002-10-21 | 2004-05-31 | 沖電気工業株式会社 | 半導体装置及びその製造方法 |
US20060073613A1 (en) * | 2004-09-29 | 2006-04-06 | Sanjeev Aggarwal | Ferroelectric memory cells and methods for fabricating ferroelectric memory cells and ferroelectric capacitors thereof |
JP2007005782A (ja) * | 2005-05-27 | 2007-01-11 | Semiconductor Energy Lab Co Ltd | 半導体装置及び半導体装置の作製方法 |
WO2008059633A1 (fr) * | 2006-11-15 | 2008-05-22 | Sharp Kabushiki Kaisha | Élément semi-conducteur, procédé de fabrication de celui-ci et affichage |
US7855097B2 (en) * | 2008-07-11 | 2010-12-21 | Organicid, Inc. | Method of increasing yield in OFETs by using a high-K dielectric layer in a dual dielectric layer |
-
2008
- 2008-08-18 US US12/193,249 patent/US7821068B2/en active Active
-
2009
- 2009-08-11 CA CA2675083A patent/CA2675083C/en not_active Expired - Fee Related
- 2009-08-13 JP JP2009187638A patent/JP2010045369A/ja active Pending
- 2009-08-14 EP EP20090167865 patent/EP2157629A3/en not_active Withdrawn
- 2009-08-14 KR KR1020090075355A patent/KR20100021975A/ko not_active Application Discontinuation
- 2009-08-17 CN CN200910166517A patent/CN101656294A/zh active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070247064A1 (en) * | 2000-02-16 | 2007-10-25 | Idemitsu Kosan Co., Ltd. | Actively driven organic el device and manufacturing method thereof |
US20070018240A1 (en) * | 2005-07-25 | 2007-01-25 | Freescale Semiconductor, Inc. | Electronic device including discontinuous storage elements |
US20070063180A1 (en) * | 2005-09-07 | 2007-03-22 | Elpida Memory, Inc. | Electrically rewritable non-volatile memory element and method of manufacturing the same |
US20070128758A1 (en) * | 2005-12-01 | 2007-06-07 | Keisuke Tanaka | Semiconductor device and method for fabricating the same |
US20070145453A1 (en) * | 2005-12-23 | 2007-06-28 | Xerox Corporation | Dielectric layer for electronic devices |
CN101093861A (zh) * | 2006-06-21 | 2007-12-26 | 国际商业机器公司 | Mim电容器器件及其制造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108039338A (zh) * | 2017-11-24 | 2018-05-15 | 华中科技大学 | 一种消除介质层针孔缺陷影响的方法 |
Also Published As
Publication number | Publication date |
---|---|
US7821068B2 (en) | 2010-10-26 |
CA2675083A1 (en) | 2010-02-18 |
KR20100021975A (ko) | 2010-02-26 |
JP2010045369A (ja) | 2010-02-25 |
EP2157629A3 (en) | 2015-05-13 |
US20100038714A1 (en) | 2010-02-18 |
EP2157629A2 (en) | 2010-02-24 |
CA2675083C (en) | 2013-03-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8253137B2 (en) | Laminate structure, electronic device, and display device | |
US8785939B2 (en) | Transparent and conductive nanostructure-film pixel electrode and method of making the same | |
EP1898478B1 (en) | Wiring pattern, electronic device, organic semiconductor device, layered wiring pattern, and layered wiring substrate using the wiring pattern | |
KR20100115302A (ko) | 박막 트랜지스터의 제조 방법 및 박막 트랜지스터 | |
EP2110856A1 (en) | Thin film semiconductor device fabrication method and thin film semiconductor device | |
TWI677104B (zh) | 薄膜電晶體、薄膜電晶體之製造方法及使用薄膜電晶體之影像顯示裝置 | |
US8502203B2 (en) | Laminated structure, method of manufacturing a laminated structure, electronic element, electronic element array, image displaying medium, and image displaying device | |
BRPI0016670B1 (pt) | método para configuração de um circuito eletrônico, e, circuito eletrônico | |
KR20140043249A (ko) | 전자 부품의 제조 방법 및 상기 방법으로 제조된 전자 부품 | |
US20170222168A1 (en) | Thin-film transistor and method of fabricating the same | |
US8821962B2 (en) | Method of forming dielectric layer with a dielectric composition | |
US9263686B2 (en) | Method of manufacturing organic thin film transistor having organic polymer insulating layer | |
CN101656294A (zh) | 包括针孔底切区域的器件和工艺 | |
JP2012516560A (ja) | 無電解めっきによる有機薄膜トランジスタのソース及びドレイン電極の形成方法 | |
US9058981B2 (en) | Dielectric composition for thin-film transistors | |
CN103283026B (zh) | 电子器件 | |
JP5807374B2 (ja) | 薄膜トランジスタ基板の製造方法およびトップゲート構造薄膜トランジスタ基板 | |
RU2552402C2 (ru) | Электронные устройства | |
JP2005277204A (ja) | 有機電界効果トランジスタ | |
JP6620556B2 (ja) | 機能材料の積層方法及び機能材料積層体 | |
Daniel et al. | The road towards large-area electronics without vacuum tools | |
JP6431975B2 (ja) | トランジスタ、および、トランジスタの製造方法 | |
JP6273374B2 (ja) | トランジスタ、および、トランジスタの製造方法 | |
RU2529663C2 (ru) | Печатное электронное устройство | |
JP2020027897A (ja) | 薄膜トランジスタ、薄膜トランジスタの製造方法および画像表示装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: SAMSUNG ELECTRONICS CO., LTD. Free format text: FORMER OWNER: XEROX CORP. (US) PATENT DEPT. 020 XEROX SQUARE 100 CLINTON AVENUE ROCHESTER NEW Effective date: 20130717 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20130717 Address after: Gyeonggi Do, South Korea Applicant after: Samsung Electronics Co., Ltd. Address before: American New York Applicant before: Xerox Corp. |
|
WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20100224 |
|
WD01 | Invention patent application deemed withdrawn after publication |