CN101656176A - Bistable state nano cantilever switch using floating gate electrode - Google Patents
Bistable state nano cantilever switch using floating gate electrode Download PDFInfo
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- CN101656176A CN101656176A CN200910023602A CN200910023602A CN101656176A CN 101656176 A CN101656176 A CN 101656176A CN 200910023602 A CN200910023602 A CN 200910023602A CN 200910023602 A CN200910023602 A CN 200910023602A CN 101656176 A CN101656176 A CN 101656176A
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- 239000000758 substrate Substances 0.000 claims abstract description 13
- 239000002184 metal Substances 0.000 claims description 5
- 238000002955 isolation Methods 0.000 abstract description 3
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 230000003068 static effect Effects 0.000 abstract 1
- 101100460147 Sarcophaga bullata NEMS gene Proteins 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
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Abstract
A bistable state nano cantilever switch using floating gate electrode comprises a substrate 1, a cantilever 2 in shape of reversed Z is arranged on substrate 1, one end of cantilever 2 is provided with a touch point 3, below which a signal wire 4 is arranged, a control electrode 5 is arranged between cantilever 2 and substrate 1, electron injection and release are carried out on a floating gate 8in control electrode 5 by controlling the arrangement of voltage, when voltage is eliminated, the bistable state can be maintained, the invention has the advantages of microminiaturization, low cost,good isolation performance, and low static power consumption.
Description
Technical field
The present invention relates to a kind of cantilever switch, particularly a kind of bistable state nano cantilever switch that utilizes floating gate electrode.
Background technology
Little/naiio-electro-meclianical systems (MEMS/NEMS) be a complication system that includes a plurality of energy territories such as kinetic energy, elastic energy of deformation, electrostatic energy or magnetostatic energy normally, with regard to great majority, it also can be interpreted as three-dimensional microstructures or the micro-system of utilizing micro-processing technology to produce simply on substrate.The micro parts cantilever beam is one of unit component the most basic in the MEMS/NEMS device.
Advantages such as the MEMS/NEMS switch is little because of its volume, and contact resistance is little have obtained great development after nineteen nineties.The cantilever switch of surface micromachined fabrication techniques has appearred adopting in nineteen ninety-five.Generally, simple, the most the most frequently used control mode of micro-nano cantilever switch is electrostatic force control, structurally adopts two separately pole plates of certain distance, and when applying voltage, pole plate deforms under the effect of electric field force, realizes the closure of switch.But there is a significant drawbacks in this switch, when removing voltage exactly, can't keep its bistable state, and this shortcoming has limited the range of application of micro-nano switch greatly.
Summary of the invention
In order to overcome the defective of above-mentioned prior art, the object of the present invention is to provide a kind of bistable state nano cantilever switch that utilizes floating gate electrode, can keep bistable state when removing voltage, have microminiaturization, cost is low, isolation performance good, quiescent dissipation is low advantage.
In order to achieve the above object, technical scheme of the present invention is achieved in that a kind of bistable state nano cantilever switch that utilizes floating gate electrode, comprise substrate 1, an overarm arm 2 that is anti-" Z " type is arranged on substrate 1, one end of overarm arm 2 is provided with contact point 3, the below of contact point 3 is holding wires 4, is provided with control electrode 5 down between overarm arm 2 and substrate 1.
Described control electrode 5 down comprises bottom electrode 6, is the floating boom 8 that tunnel dielectric 7 is wrapped in above the bottom electrode 6, and the top of tunnel dielectric 7 is block media layers 9.
The lower surface of described overarm arm 2 can be provided with layer of metal medium 10.
Because down control electrode 5 of the present invention is provided with floating boom 8, can keep bistable state when removing voltage, have microminiaturization, cost is low, isolation performance good, quiescent dissipation is low advantage.
Description of drawings
Accompanying drawing is a structure principle chart of the present invention.
Embodiment
Below in conjunction with accompanying drawing structural principle of the present invention and operation principle are described in detail.
A kind of bistable state nano cantilever switch that utilizes floating gate electrode, comprise substrate 1, an overarm arm 2 that is anti-" Z " type is arranged on substrate 1, one end of overarm arm 2 is provided with contact point 3, the below of contact point 3 is holding wires 4, is provided with control electrode 5 down between overarm arm 2 and substrate 1, and following control electrode 5 comprises bottom electrode 6, be the floating boom 8 that tunnel dielectric 7 is wrapped in above the bottom electrode 6, the top of tunnel dielectric 7 is block media layers 9.
The lower surface of described overarm arm 2 both can be provided with layer of metal medium 10, also metal medium 10 can be set.
Operation principle of the present invention is: after adding voltage between cantilever beam 2 and the following control electrode 5, cantilever beam 2 forms the closure of switch because the effect of electrostatic force is bent downwardly, and contact point 3 contacts with holding wire 4, causes holding wire 4 conductings; This is positive voltage pulse of bottom electrode 6 inputs of control electrode 5 at present, injects electronics to floating boom 8, because the electrostatic force of electronics makes cantilever beam reach the stable state of pass; During function that realization is opened, negative voltage pulse of bottom electrode 6 inputs of following control electrode 5 discharges the electronics in the floating boom 8, and cantilever beam returns to the origin-location, reaches the state of disconnection.
The effect of metal medium 10 be to strengthen cantilever beam 2 control action and mechanical property and the form that changes beam.
Claims (3)
1, a kind of bistable state nano cantilever switch that utilizes floating gate electrode, comprise substrate (1), it is characterized in that, an overarm arm (2) that is anti-" Z " type is arranged on substrate (1), one end of overarm arm (2) is provided with contact point (3), the below of contact point (3) is holding wire (4), is provided with control electrode (5) down between overarm arm (2) and substrate (1).
2, cantilever switch according to claim 1, it is characterized in that, described control electrode (5) down comprises bottom electrode (6), is the floating boom (8) that tunnel dielectric (7) is wrapped in above the bottom electrode (6), and the top of tunnel dielectric (7) is block media layer (9).
3, cantilever switch according to claim 1 is characterized in that, the lower surface of described overarm arm (2) can be provided with layer of metal medium (10).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910023602A CN101656176A (en) | 2009-08-14 | 2009-08-14 | Bistable state nano cantilever switch using floating gate electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910023602A CN101656176A (en) | 2009-08-14 | 2009-08-14 | Bistable state nano cantilever switch using floating gate electrode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101656176A true CN101656176A (en) | 2010-02-24 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910023602A Pending CN101656176A (en) | 2009-08-14 | 2009-08-14 | Bistable state nano cantilever switch using floating gate electrode |
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| CN (1) | CN101656176A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104064407A (en) * | 2014-06-12 | 2014-09-24 | 清华大学 | Micro electro mechanical system switch |
| EP2948968A4 (en) * | 2013-01-28 | 2016-08-24 | Massachusetts Inst Technology | Electromechanical device |
| CN108709937A (en) * | 2018-07-16 | 2018-10-26 | 哈尔滨电气股份有限公司 | A kind of test device and test method of strain measurement-cantilever beam free damping coefficient |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1979715A (en) * | 2005-12-06 | 2007-06-13 | 株式会社日立制作所 | Switch using micro electro mechanical system |
| WO2009016524A1 (en) * | 2007-06-22 | 2009-02-05 | Korea Advanced Institute Of Science & Technology | Electrostatic actuator |
-
2009
- 2009-08-14 CN CN200910023602A patent/CN101656176A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1979715A (en) * | 2005-12-06 | 2007-06-13 | 株式会社日立制作所 | Switch using micro electro mechanical system |
| WO2009016524A1 (en) * | 2007-06-22 | 2009-02-05 | Korea Advanced Institute Of Science & Technology | Electrostatic actuator |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2948968A4 (en) * | 2013-01-28 | 2016-08-24 | Massachusetts Inst Technology | Electromechanical device |
| US9991076B2 (en) | 2013-01-28 | 2018-06-05 | Massachusetts Institute Of Technology | Electromechanical device |
| CN104064407A (en) * | 2014-06-12 | 2014-09-24 | 清华大学 | Micro electro mechanical system switch |
| CN104064407B (en) * | 2014-06-12 | 2016-04-20 | 清华大学 | Micro electro-mechanical system switch |
| CN108709937A (en) * | 2018-07-16 | 2018-10-26 | 哈尔滨电气股份有限公司 | A kind of test device and test method of strain measurement-cantilever beam free damping coefficient |
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Application publication date: 20100224 |