CN101651173B - Semiconductor light-emitting element - Google Patents
Semiconductor light-emitting element Download PDFInfo
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- CN101651173B CN101651173B CN2008101470117A CN200810147011A CN101651173B CN 101651173 B CN101651173 B CN 101651173B CN 2008101470117 A CN2008101470117 A CN 2008101470117A CN 200810147011 A CN200810147011 A CN 200810147011A CN 101651173 B CN101651173 B CN 101651173B
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Abstract
The invention provides a semiconductor light-emitting element, which comprises a substrate, a multilayer structure and a plurality of nanometer composite structures. The substrate has an upper surface and a lower surface. The multilayer structure is formed on the upper surface of the substrate and has a luminous zone. The multilayer structure also has a top surface. Each of the plurality of nanometer composite structures comprises a first nanometer layer and a second nanometer layer. The first nanometer layer is formed on the top surface of the multilayer structure and/or the lower surface of the substrate. The second nanometer layer is formed on the first nanometer layer. Particularly, the refractive index of the first nanometer layer is greater than that of the second nanometer layer.
Description
Technical field
The present invention relates to a kind of semiconductor light-emitting elements (semiconductor light-emitting device), especially, the present invention relates to a kind of semiconductor light-emitting elements with height external quantum efficiency (external quantum efficiency).
Background technology
Semiconductor light-emitting elements (for example now, light-emittingdiode) application is very extensive, for example products such as key system, mobile phone screen module backlight, Vehicular illumination system, lampion decorations and field of remote control are all seen semiconductor light-emitting elements and are widely used.In order to allow semiconductor light-emitting elements guarantee higher functional reliability and lower energy resource consumption as much as possible, therefore all need ask the external quantum efficiency of itself for semiconductor light-emitting elements.
In principle, the external quantum efficiency of semiconductor light emitting component depends on internal quantum (internal quantum efficiency) and the release efficiency (extraction efficiency) of itself.So-called internal quantum is determined by the material behavior of semiconductor light-emitting elements and quality.Then meaning from element internal as for release efficiency and to be issued to radiation ratio in the epoxy resin of surrounding air or encapsulation.The loss that release efficiency depends on when element internal is left in radiation to be taken place.The one of the main reasons that causes above-mentioned loss is to have higher refractive index owing to form the semi-conducting material of the superficial layer of element, and for example the refractive index of GaAs (GaAs) is about 3.6.As everyone knows, high refractive index can cause light to produce total reflection (total reflection) and can't launch at this material surface.
In the prior art, the method for surface roughening is disclosed, and this method is in order to promote the external quantum efficiency of semiconductor light-emitting elements.For example, United States Patent (USP) case numbers 7,102,175 promptly discloses the light-emittingdiode that forms many micrometer structures and present coarse configuration of surface on a kind of transparency conducting layer.See also Fig. 1.Fig. 1 has shown the light-emittingdiode that has many micrometer structures on the transparency conducting layer.
This micrometer structure is an one-period property structure, and spacing to each other is L.In addition, the wavelength of the light that semiconductor light-emitting elements produced is λ, is λ≤L≤20 λ and have a relational expression between wavelength X and the L.Therefore, this micrometer structure can reduce the total reflection probability of light, to promote the external quantum efficiency of semiconductor light-emitting elements.Be noted that the above is a problem of removing to solve reflectivity from the field incision of geometric optics, promptly go to inquire into the phenomenon of its refraction and reflection with the corpuscular property of light.
In theory, if form nanostructure on the exiting surface of semiconductor light-emitting elements, and nanostructure spacing to each other is that wavelength according to light designs, then when light is incident to exiting surface, just can go to inquire into its penetrance with the fluctuation of light, this promptly belongs to the field of subwavelength optical.In addition, if the refractive index of nanostructure itself cooperates contiguous medium and the process design, can improve the penetrance of light, and make light that semiconductor light-emitting elements produced almost penetrate exiting surface and launch, significantly to promote the external quantum efficiency of semiconductor light-emitting elements.
Therefore, main purpose of the present invention is to provide a kind of semiconductor light-emitting elements with height external quantum efficiency, to solve the above problems.
Summary of the invention
A purpose of the present invention is to provide a kind of semiconductor light-emitting elements.
According to a specific embodiment of the present invention, this semiconductor light-emitting elements comprises a substrate (substrate), a sandwich construction (multi-layer structure) and a plurality of nano composite structure (nano-scaledcomposite structure).
This substrate has a upper surface (upper surface) and a lower surface (lower surface).This sandwich construction is formed on this upper surface of this substrate and comprises a luminous zone (light-emitting region).This sandwich construction has a top surface (top surface).
Each nano composite structure in these a plurality of nano composite structures comprises one first nanometer layer and one second nanometer layer.This first nanometer layer is formed on this top surface of this sandwich construction and/or on this lower surface of this substrate.This second nanometer layer is formed on this first nanometer layer.Especially, the refractive index of this first nanometer layer is greater than the refractive index of this second nanometer layer.
Another specific embodiment according to the present invention is a kind of semiconductor light-emitting elements.
This semiconductor light-emitting elements comprises a substrate, a sandwich construction, a plurality of first nanometer layer and one second nanometer layer.
This substrate has a upper surface.This sandwich construction is formed on this upper surface of this substrate and comprises a luminous zone.This sandwich construction has a top surface.
These a plurality of first nanometer layer are formed on this top surface of this sandwich construction.This second nanometer layer is formed on this first nanometer layer and is formed on this top surface of this sandwich construction.Especially, the refractive index of each first nanometer layer is greater than the refractive index of this second nanometer layer.
Another specific embodiment according to the present invention is a kind of semiconductor light-emitting elements.
This semiconductor light-emitting elements comprises a substrate, a sandwich construction, a plurality of first nanometer layer and one second nanometer layer.
This substrate has a upper surface and a lower surface.This sandwich construction is formed on this upper surface of this substrate and comprises a luminous zone.These a plurality of first nanometer layer are formed on this lower surface of this substrate.This second nanometer layer is formed on these a plurality of first nanometer layer and is formed on this lower surface of this substrate.Especially, the refractive index of each first nanometer layer is greater than the refractive index of this second nanometer layer.
Compared to existing technology, semiconductor light-emitting elements according to the present invention is the difference (being the notion of graded index) of utilizing refractive index between this first nanometer layer and this second nanometer layer and controls this first nanometer layer spacing to each other with the penetrance of lifting light by the directive external world, inside of semiconductor light-emitting elements, and then increases the external quantum efficiency of semiconductor light-emitting elements.
The advantages and spirit of the present invention can be by following detailed Description Of The Invention and appended graphic being further understood.
Description of drawings
Fig. 1 has shown the light-emittingdiode that has many micrometer structures on the transparency conducting layer.
Fig. 2 A to Fig. 2 C has shown the cross sectional view according to the semiconductor light-emitting elements of a specific embodiment of the present invention.
Fig. 3 A and Fig. 3 B have shown the cross sectional view according to the semiconductor light-emitting elements of another specific embodiment of the present invention.
Fig. 4 has shown the cross sectional view according to the semiconductor light-emitting elements of another specific embodiment of the present invention.
Embodiment
See also Fig. 2 A to Fig. 2 C.Fig. 2 A to Fig. 2 C has shown the cross sectional view according to the semiconductor light-emitting elements 1 of a specific embodiment of the present invention.
Shown in Fig. 2 A to Fig. 2 C, this semiconductor light-emitting elements 1 comprises a substrate 10, a sandwich construction 12 and a plurality of nano composite structure 14.
This substrate 10 can be by silicon (Si), gallium nitride (GaN), aluminium nitride (AlN), sapphire (sapphire), spinelle (spinnel), carborundum (SiC), GaAs (GaAs), alundum (Al (Al
2O
3), titanium dioxide lithium gallium (LiGaO
2), titanium dioxide lithium aluminium (LiAlO
2) or four magnesium oxide, two aluminium (MgAl
2O
4) make.
This substrate 10 has a upper surface 100 and a lower surface 102.This sandwich construction 12 is to be formed on this upper surface 100 of this substrate 10 and to comprise a luminous zone 120.This semiconductor light-emitting elements 1 is by these luminous zone 120 emission light.This sandwich construction 12 has a top surface 122.In a specific embodiment, top layer of this sandwich construction 12 can be a transparency conducting layer or semiconductor material layer.Therefore, 122 of this top surfaces can be the surfaces of this transparency conducting layer or this semiconductor material layer.
Each nano composite structure 14 in these a plurality of nano composite structures 14 comprises one first nanometer layer 140 and one second nanometer layer 142.This second nanometer layer 142 is formed on this first nanometer layer 140.
Shown in Fig. 2 A, if light is by the top bright dipping of this semiconductor light-emitting elements 1 itself, this first nanometer layer 140 can be formed on this top surface 122 of this sandwich construction 12.Perhaps, shown in Fig. 2 B, if light is by the below bright dipping of this semiconductor light-emitting elements 1 itself, this first nanometer layer 140 can be formed on this lower surface 102 of this substrate 10.Or shown in Fig. 2 C, if light is simultaneously by the top and the below bright dipping of this semiconductor light-emitting elements 1 itself, this first nanometer layer 140 can be formed on this top surface 122 of this sandwich construction 12 and on this lower surface 102 of this substrate 10.Especially, the refractive index of this first nanometer layer 140 is greater than the refractive index of this second nanometer layer 142.
In this specific embodiment, this first nanometer layer 140 can be made by silicon (Si), but not as limit.
In addition, this first nanometer layer 140 can be formed by a chemical etching (photochemical etching) processing procedure.By this chemical etching processing procedure, this first nanometer layer 140 (random) randomly is formed on this top surface 122 of this sandwich construction 12 and/or on this lower surface 102 of this substrate 10.In principle, these a plurality of nano composite structures 14 spacing (pitch) P to each other can make this spacing P haply less than 1/4th wavelength X of light through design.In addition, because this chemical etching processing procedure does not need to use light shield, therefore can reduce manufacturing cost according to semiconductor light-emitting elements 1 of the present invention.
After this first nanometer layer 140 formed, this first nanometer layer 140 can further place a thermal oxidation (thermal oxidation) processing procedure to form an oxide layer (i.e. this second nanometer layer 142) on this first nanometer layer 140.In a specific embodiment, this second nanometer layer 142 can be by silicon dioxide (SiO
2) made, but not as limit.
Be noted that the refractive index of this first nanometer layer 140 is greater than the refractive index of this second nanometer layer 142.Except this spacing P of these a plurality of nano composite structures 14 haply 1/4th wavelength X less than this light, the refractive index of this first nanometer layer 140 and this second nanometer layer 142 can cooperate contiguous medium respectively and through design, the penetrance in the time of so can controlling light and be incident to this a plurality of nano composite structure 14.
For example, if the top layer of this of this sandwich construction 12 is a gallium nitride semiconductor material layer (refractive index is 2.5), then the refractive index of this first nanometer layer 140 can design according to the refractive index of this gallium nitride semiconductor material layer, can make the refractive index of first nanometer layer 140 be lower than the refractive index of gallium nitride semiconductor material layer.Similarly, the refractive index of this second nanometer layer 142 can design according to the refractive index of air (refractive index is 1), can make the refractive index of second nanometer layer 142 be higher than the refractive index of air (refractive index is 1).On principle, make that the refractive index from this gallium nitride semiconductor material layer to air presents the variation of successively decreasing thus, realize graded index.
So, when light during by the inside directive air of this semiconductor light-emitting elements 1, notion based on graded index, the difference of refractive index diminishes between air and this gallium nitride semiconductor material layer, therefore the penetrance of incident light obtains to promote, and it is outer and promote its external quantum efficiency to cause the light of this semiconductor light-emitting elements 1 to export to this semiconductor light-emitting elements 1 significantly.
See also Fig. 3 A and Fig. 3 B.Fig. 3 A and Fig. 3 B have shown the cross sectional view according to the semiconductor light-emitting elements 2 of another specific embodiment of the present invention.
Shown in Fig. 3 A and Fig. 3 B, this semiconductor light-emitting elements 2 comprises a substrate 20, a sandwich construction 22, a plurality of first nanometer layer 24 and one second nanometer layer 26.
This substrate 20 has a upper surface 200 and a lower surface 202.This sandwich construction 22 is formed on this upper surface 200 of this substrate 20 and comprises a luminous zone 220.This sandwich construction 22 has a top surface 222.
As shown in Figure 3A, if light is by the top bright dipping of this semiconductor light-emitting elements 2 itself, these a plurality of first nanometer layer 24 are formed on this top surface 222 of this sandwich construction 22.This second nanometer layer 26 is formed on these a plurality of first nanometer layer 24 and is formed on this top surface 222 of this sandwich construction 22.
Shown in Fig. 3 B, if light is simultaneously by the top and the below bright dipping of this semiconductor light-emitting elements 2 itself, these a plurality of first nanometer layer 24 are formed on this top surface 222 of this sandwich construction 22 and on this lower surface 202 of this substrate 20.This second nanometer layer 26 is formed on these a plurality of first nanometer layer 24, on this top surface 222 of this sandwich construction 22 and on this lower surface 202 of this substrate 20.
These a plurality of first nanometer layer 24 can be made by silicon, and this second nanometer layer 26 can be made by an oxide layer.For example, this oxide layer can be a silicon dioxide.
In addition, these a plurality of first nanometer layer 24 can be formed by a chemical etching processing procedure.In principle, these a plurality of first nanometer layer 24 spacing P to each other can make this spacing P haply less than 1/4th wavelength X of this light through design.
After this first nanometer layer 24 forms, further can carry out an ald (atomic layerdeposition) processing procedure to form this oxide layer (i.e. this second nanometer layer 26) on these a plurality of first nanometer layer 24.
On practice, the ald processing procedure has the following advantages: (1) can be in the formation of atomic level control material; (2) can control the thickness of film more accurately; (3) but the large tracts of land volume production; (4) the excellent uniformity (uniformity) is arranged; (5) excellent three-dimensional covering property (conformality) is arranged; (6) no hole structure; (7) defect concentration is little; And (8) depositing temperature is low ..., etc. process benefit.
Similarly, the refractive index of each first nanometer layer 24 is greater than the refractive index of this second nanometer layer 26, and its functional and reason does not repeat them here as mentioned above.
See also Fig. 4.Fig. 4 has shown the cross sectional view according to the semiconductor light-emitting elements 3 of another specific embodiment of the present invention.
As shown in Figure 4, this semiconductor light-emitting elements 3 comprises a substrate 30, a sandwich construction 32, a plurality of first nanometer layer 34 and one second nanometer layer 36.
This substrate 30 has a upper surface 300 and a lower surface 302.This sandwich construction 32 is formed on this upper surface 300 of this substrate 30 and comprises a luminous zone 320.In this embodiment, light is that therefore these a plurality of first nanometer layer 34 are formed on this lower surface 302 of this substrate 30 by the below bright dipping of this semiconductor light-emitting elements 3 itself.This second nanometer layer 36 is formed on these a plurality of first nanometer layer 34 and is formed on this lower surface 302 of this substrate 30.
Similarly, if light is simultaneously by the top and the below bright dipping of this semiconductor light-emitting elements 3 itself, these a plurality of first nanometer layer 34 are formed on the top surface 322 of this sandwich construction 32 and on this lower surface 302 of this substrate 30.This second nanometer layer 36 be formed on these a plurality of first nanometer layer 34, on this top surface 322 of this sandwich construction 32 and on this lower surface 302 of this substrate 30.
In a specific embodiment, these a plurality of first nanometer layer 34 can be made by silicon, and this second nanometer layer 36 can be made by an oxide layer.For example, this oxide layer can be a silicon dioxide.
In addition, these a plurality of first nanometer layer 34 can be formed by a chemical etching processing procedure.In principle, these a plurality of first nanometer layer 34 spacing P to each other can make this spacing P haply less than 1/4th wavelength X of this light through design.
Similarly, the refractive index of each first nanometer layer 34 is the refractive indexes greater than this second nanometer layer 36, and its functional and reason does not repeat them here as mentioned above.
Compared to existing technology, semiconductor light-emitting elements according to the present invention utilize this first nanometer layer and this second nanometer layer between refractive index difference (being the notion of graded index) and control this first nanometer layer spacing to each other promoting the penetrance of light by the directive external world, inside of semiconductor light-emitting elements, and then increase the external quantum efficiency of semiconductor light-emitting elements.
By the detailed description of above preferred embodiment, be to wish to know more to describe feature of the present invention and spirit, and be not to come scope of the present invention is limited with above-mentioned disclosed preferred embodiment.On the contrary, its objective is that hope can contain in the scope of claim of being arranged in of various changes and tool equality institute of the present invention desire application.
Claims (18)
1. semiconductor light-emitting elements comprises:
One substrate, this substrate has a upper surface and a lower surface;
One sandwich construction, this sandwich construction are formed on this upper surface of this substrate and comprise a luminous zone, and this sandwich construction has a top surface; And
A plurality of nano composite structures, each nano composite structure comprises:
One first nanometer layer, this first nanometer layer are formed on this top surface of this sandwich construction or on this lower surface of this substrate; And
One second nanometer layer, this second nanometer layer are formed on this first nanometer layer;
Wherein the refractive index of this first nanometer layer is greater than the refractive index of this second nanometer layer.
2. semiconductor light-emitting elements as claimed in claim 1 is characterized in that, these a plurality of nano composite structures spacing to each other is less than 1/4th wavelength of the light of luminous zone emission.
3. semiconductor light-emitting elements as claimed in claim 1 is characterized in that, this first nanometer layer is made by silicon.
4. semiconductor light-emitting elements as claimed in claim 1 is characterized in that, this second nanometer layer is made by silicon dioxide.
5. semiconductor light-emitting elements as claimed in claim 3 is characterized in that, this first nanometer layer is formed by a chemical etching processing procedure.
6. semiconductor light-emitting elements as claimed in claim 4 is characterized in that, this second nanometer layer is formed by a thermal oxidation processing procedure.
7. semiconductor light-emitting elements comprises:
One substrate, this substrate has a upper surface;
One sandwich construction, this sandwich construction are formed on this upper surface of this substrate and comprise a luminous zone, and this sandwich construction has a top surface;
A plurality of first nanometer layer, these a plurality of first nanometer layer are formed on this top surface of this sandwich construction; And
One second nanometer layer, this second nanometer layer are formed on these a plurality of first nanometer layer and are formed on this top surface of this sandwich construction;
Wherein the refractive index of each first nanometer layer is greater than the refractive index of this second nanometer layer.
8. semiconductor light-emitting elements as claimed in claim 7 is characterized in that, these a plurality of first nanometer layer spacing to each other is less than 1/4th wavelength of the light of luminous zone emission.
9. semiconductor light-emitting elements as claimed in claim 7 is characterized in that, these a plurality of first nanometer layer are made by silicon.
10. semiconductor light-emitting elements as claimed in claim 7 is characterized in that, this second nanometer layer is made by silicon dioxide.
11. semiconductor light-emitting elements as claimed in claim 9 is characterized in that, these a plurality of first nanometer layer are formed by a chemical etching processing procedure.
12. semiconductor light-emitting elements as claimed in claim 10 is characterized in that, this second nanometer layer is formed by an ald processing procedure.
13. a semiconductor light-emitting elements comprises:
One substrate, this substrate has a upper surface and a lower surface;
One sandwich construction, this sandwich construction are formed on this upper surface of this substrate and comprise a luminous zone;
A plurality of first nanometer layer, these a plurality of first nanometer layer are formed on this lower surface of this substrate; And
One second nanometer layer, this second nanometer layer are formed on these a plurality of first nanometer layer and are formed on this lower surface of this substrate;
Wherein the refractive index of each first nanometer layer is greater than the refractive index of this second nanometer layer.
14. semiconductor light-emitting elements as claimed in claim 13 is characterized in that, these a plurality of first nanometer layer spacing to each other is less than 1/4th wavelength of the light of luminous zone emission.
15. semiconductor light-emitting elements as claimed in claim 13 is characterized in that, these a plurality of first nanometer layer are made by silicon.
16. semiconductor light-emitting elements as claimed in claim 13 is characterized in that, this second nanometer layer is made by silicon dioxide.
17. semiconductor light-emitting elements as claimed in claim 15 is characterized in that, these a plurality of first nanometer layer are formed by a chemical etching processing procedure.
18. semiconductor light-emitting elements as claimed in claim 16 is characterized in that, this second nanometer layer is formed by an ald processing procedure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008101470117A CN101651173B (en) | 2008-08-12 | 2008-08-12 | Semiconductor light-emitting element |
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|---|---|---|---|
| CN2008101470117A CN101651173B (en) | 2008-08-12 | 2008-08-12 | Semiconductor light-emitting element |
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| CN101651173A CN101651173A (en) | 2010-02-17 |
| CN101651173B true CN101651173B (en) | 2011-04-27 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101026212A (en) * | 2006-02-24 | 2007-08-29 | 三星电机株式会社 | Nitride-based semiconductor light-emitting device and method of manufacturing the same |
| CN101160671A (en) * | 2005-04-13 | 2008-04-09 | 皇家飞利浦电子股份有限公司 | Structured substrate for a LED |
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2008
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101160671A (en) * | 2005-04-13 | 2008-04-09 | 皇家飞利浦电子股份有限公司 | Structured substrate for a LED |
| CN101026212A (en) * | 2006-02-24 | 2007-08-29 | 三星电机株式会社 | Nitride-based semiconductor light-emitting device and method of manufacturing the same |
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