CN101626025A - GaN-based multi-band detector and preparation method thereof - Google Patents
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Abstract
The invention discloses a GaN-based multi-band detector, which comprises a substrate, a short wave band detecting unit, a medium wave band detecting unit and a long wave band detecting unit, wherein the short wave band detecting unit comprises a first wide band gap material layer grown at one third part of one side of the upside of the substrate, and a pair of first back-to-back Schottky electrodes grown on the first wide band gap material layer; the medium wave band detecting unit comprises a second wide band gap material layer grown at one third part of the middle of the upside of the substrate, a second middle band gap material layer grown on the second wide band gap material layer, and a pair of second back-to-back Schottky electrodes grown on the second middle band gap material layer; and the long wave band detecting unit comprises a third wide band gap material layer grown at one third part of the other side of the upside of the substrate, a third middle band gap material layer grown on the third wide band gap material layer, a third narrow band gap material layer grown on the third middle band gap material layer, and a pair of third back-to-back Schottky electrodes grown on the third narrow band gap material layer.
Description
Technical field
The invention belongs to field of semiconductor devices, particularly invented a kind of GaN-based multi-band detector and preparation method thereof.
Background technology
As third generation semiconductor, gallium nitride (GaN) and series material thereof (comprising aluminium nitride, aluminum gallium nitride, indium gallium nitrogen, indium nitride) are big with its energy gap, spectral region is wide (having covered from ultraviolet to infrared all band), heat-resisting quantity and good corrosion resistance, in optoelectronics and microelectronics field huge using value are arranged.The GaN base ultraviolet detector is a kind of very important GaN base optical electronic part, and, military domain civilian in missile warning, the detection of rocket plumage cigarette, ultraviolet communication, chemical and biological weapons detection, aircraft guidance, spaceship, ozone hole detection, fire monitoring etc. has important use to be worth.Obtain remarkable progress aspect the GaN base ultraviolet detector in the world at present, developing the unit component and the focal plane array of multiple structure.But these detectors all have response to the light less than a certain wavelength, can't distinguish and survey a plurality of discrete wave bands.Influenced further developing and using of gallium nitride ultraviolet detector
Compare with single band detector, GaN based multi-band ultraviolet detector can be discerned discrete a plurality of spectrum, can accomplish in actual applications that false alarm rate is low, highly sensitive, strong or the like the incomparable advantage of antijamming capability.Multiband is surveyed the communication capacity that can increase the short distance ultra-violet optical communication system simultaneously, plays a significant role in the optical communication field.
Summary of the invention
The objective of the invention is to propose a kind of GaN-based multi-band detector and preparation method thereof, this multiband detector can be surveyed the light of a plurality of wave bands respectively, and judges the light intensity of each wave band.
The invention provides a kind of GaN-based multi-band detector, it is characterized in that, comprising:
One substrate;
One short-wave band probe unit comprises:
One first wide bandgap material layer, 1/3rd places of this first wide bandgap material layer epitaxially grown side on substrate;
A pair of first Schottky electrode back-to-back, this to first back-to-back Schottky electrode be grown on the first wide bandgap material layer;
One medium wave band probe unit comprises:
One second wide bandgap material layer, there is one first gap at this second wide bandgap material layer epitaxially grown middle(-)third place on substrate between this second wide bandgap material layer and the first wide bandgap material layer;
One second intermediate band-gap layer, this second intermediate band-gap layer epitaxially grown is on the second wide bandgap material layer;
A pair of second Schottky electrode back-to-back, this to second back-to-back Schottky electrode be grown on the second intermediate band-gap layer;
One long-wave band probe unit comprises:
One the 3rd wide bandgap material layer, there is one second gap at 1/3rd places of the 3rd wide bandgap material layer epitaxially grown opposite side on substrate between the 3rd wide bandgap material layer and the second wide bandgap material layer;
One the 3rd intermediate band-gap layer, the 3rd intermediate band-gap layer growth is on the 3rd wide bandgap material layer;
One the 3rd low bandgap material layer, the 3rd low bandgap material layer growth is on the 3rd intermediate band-gap layer;
The a pair of the 3rd Schottky electrode back-to-back, this to the 3rd back-to-back Schottky electrode be grown on the 3rd low bandgap material layer.
Wherein said substrate is the sapphire material of twin polishing.
The material of wherein said first, second, third wide bandgap material layer and second, third intermediate band-gap layer and the 3rd low bandgap material layer is a gallium nitride-based material, comprises AlN, GaN, InN and ternary thereof or multi-element compounds.
The band gap width of wherein said first, second, third wide bandgap material layer is greater than the band gap width of second, third intermediate band-gap layer, and the band gap width of second, third intermediate band-gap layer is greater than the band gap width of the 3rd low bandgap material layer.
The thickness of wherein said first, second, third wide bandgap material layer and second, third intermediate band-gap layer will be respectively greater than the absorption length of the light of its intrinsic band gap correspondence.
Wherein said first, second, third 3 pairs back-to-back Schottky electrode be strip or interdigitated structure, material is printing opacity, semi-transparent or lighttight material.
The invention provides a kind of manufacture method of GaN-based multi-band detector, it is characterized in that, comprise the steps:
Step 1: on substrate, utilize epitaxial growth equipment growth wide bandgap material layer;
Step 2: the intermediate band-gap of on the wide bandgap material layer, growing;
Step 3: growth low bandgap material layer on intermediate band-gap;
Step 4: on the structure that abovementioned steps forms, first and second gaps of two channel form of etching, the degree of depth in this first and second gap is divided into first section low bandgap material layer of syllogic, second section low bandgap material layer and the 3rd section low bandgap material layer with the material on the substrate till the substrate;
Step 5: the low bandgap material layer of the first low bandgap material layer on first section and intermediate band-gap and second section is etched away;
Step 6: on the first wide bandgap material layer, the second intermediate band-gap layer, the 3rd low bandgap material layer, make first pair of Schottky electrode, second pair Schottky electrode, the 3rd pair Schottky electrode back-to-back back-to-back back-to-back respectively;
Step 7: carry out substrate and cut thin, polishing, cleavage, the single tube device package on base, is formed GaN-based multi-band detector.
Wherein said substrate is the sapphire material of twin polishing.
The material of wherein said wide bandgap material layer, intermediate band-gap layer and low bandgap material layer is a gallium nitride-based material, comprises AlN, GaN, InN and ternary thereof or multi-element compounds.
The band gap width of wherein said first, second, third wide bandgap material layer is greater than the band gap width of second, third intermediate band-gap layer, and the band gap width of second, third intermediate band-gap layer is greater than the band gap width of the 3rd low bandgap material layer.
The thickness of wherein said wide bandgap material layer and intermediate band-gap layer should be respectively greater than the absorption length of the light of its intrinsic band gap correspondence.
Wherein said first, second, third 3 pairs back-to-back Schottky electrode be strip or interdigitated structure, material is semi-transparent or lighttight material.
It is different that the present invention has utilized the continuous adjustability of band gap of GaN base material system to grow according to demand cleverly, and the multilayer material of band gap width difference (corresponding component difference) is made Schottky electrode after etching step on each layer material.Make the light of different wave length that response be arranged respectively on the detector of making on the different layers material respectively.With the triband detector is example, grow successively on the substrate of twin polishing exactly wide bandgap material layer 11, intermediate band-gap layer 13 and low bandgap material layer 15.Etching low bandgap material layer 15 and intermediate band-gap layer 13 expose intermediate band-gap layer and wide bandgap material layer respectively, form two steps.All produce Schottky electrode on each layer, each layer just is equivalent to a probe unit like this.When light during from back surface incident, the light of the light of short-wave band, the light of middle wave band and the long-wave band detector on broad-band gap, mid-gap and low bandgap material respectively has response, the light intensities of the corresponding different-waveband of different responses.We utilize reading circuit, can obtain the concrete light intensity of the light of each wave band according to the responsiveness on the different detectors.
Description of drawings
In order to further specify content of the present invention, below in conjunction with instantiation and drawings in detail as after, wherein:
The GaN-based multi-band detector device architecture schematic diagram that Fig. 1 the present invention proposes
The GaN-based multi-band detector material structure schematic diagram that Fig. 2 the present invention proposes
Schematic diagram behind the GaN-based multi-band detector etching groove that Fig. 3 the present invention proposes
The two waveband AlGaN UV detector structure schematic diagram that Fig. 4 the present invention proposes
Embodiment
See also Fig. 1, Fig. 2, shown in Figure 3, a kind of GaN-based multi-band detector of the present invention comprises:
One substrate 10 is because detector work the time needs light from back surface incident, so this backing material is the sapphire of twin polishing;
Syllogic first, second, third wide bandgap material layer 11A, 11B, 11C, they are that epitaxial growth simultaneously is on substrate 10.The first wide bandgap material layer 11A is used for surveying the light than short-wave band.The continuous adjustability of band gap according to the needs and the gallium nitride-based material (comprising AlN, GaN, InN and ternary thereof or multi-element compounds) of detecting band can make its band gap width satisfy the needs of detecting band by the design alternative material.For example survey the light of blind positive wave band if desired, then this first wide bandgap material layer 11A can select the AlGaN material of Al component higher relatively (more than 35%) for use.The thickness of this layer will satisfy certain value in addition, because the second wide bandgap material layer 11B is simultaneously as the filter window in the medium wave band probe unit, the light that energy need be higher than the band gap width of this layer material correspondence all absorbs, so the thickness of this layer material should have a gap 30,40 respectively between this first, second, third wide bandgap material layer 11A, 11B, the 11C greater than the absorption length of the light of its intrinsic band gap correspondence; This first, second, third wide bandgap material layer 11A, 11B, 11C are 1/3rd places that lay respectively on the substrate 10 haply.
Second, third intermediate band-gap layer of two- part 13B, 13C, they are that direct epitaxial growth is on second, third wide bandgap material layer 11B and 11C, and the second intermediate band-gap layer 13B and the second wide bandgap material layer 11B, the area of the 3rd intermediate band-gap layer 13C and the 3rd wide bandgap material layer 11C equate respectively.The component of same this layer material also will be come its band gap width of design and cut-out according to the needs of its detecting band, make its can survey wavelength less than the wavelength of its band gap correspondence the wavelength greater than the band gap correspondence of the second wide bandgap material layer wide bandgap material layer 11B.Same because the 3rd intermediate band-gap layer 13C is simultaneously as the filter window in the short-wave band probe unit, the light that energy need be higher than the band gap width of this layer material correspondence all absorbs, so the thickness of this layer material should be greater than the absorption length of the light of its intrinsic band gap correspondence;
One-part form the 3rd low bandgap material layer 15C, the 3rd low bandgap material layer 15C be direct epitaxial growth on the 3rd intermediate band-gap layer 13C, and the area of this layer equals the area of the 3rd intermediate band-gap layer 13C.The component of same this layer material also will be come its band gap width of design and cut-out according to the needs of its detecting band, make its can survey wavelength less than the wavelength of its band gap correspondence the wavelength greater than the band gap correspondence of the 3rd intermediate band-gap layer 13C;
Three pairs first, second, third Schottky electrodes 12,14,16 back-to-back, this three couple is Schottky electrode the 12,14, the 16th back-to-back, utilizes the method for the photoetching of standard to be produced on the first wide bandgap material layer 11A, the second intermediate band-gap layer 13B and the 3rd low bandgap material layer 15C; In order to improve the responsiveness of detector, three pairs back-to-back Schottky electrode 12,14,16 be strip or interdigitated structure; In addition because this GaN-based multi-band detector when work only from the back surface incident of device, so this three couple back-to- back Schottky electrode 12,14,16 can be printing opacity, semi-transparent or lighttight material.
Please again in conjunction with consulting Fig. 1, Fig. 2, shown in Figure 3, the manufacture method of a kind of GaN-based multi-band detector of the present invention comprises the steps:
Shown in the GaN-based multi-band detector material structure schematic diagram that Fig. 2 the present invention proposes, at first on substrate 10, utilize epitaxial growth equipment growth wide bandgap material layer 11, growth intermediate band-gap layer 13 on wide bandgap material layer 11 then, growth low bandgap material layer 15 on intermediate band-gap layer 13 has so just formed the GaN-based multi-band detector material structure at last.Certainly the sandwich construction of can growing is as required surveyed different wave bands respectively, and the three-decker of Jie Shaoing is just done representational explanation here.
Carry out the deep erosion in first, second gap 30,40 subsequently on the material that growth is finished, material is divided into three unit, shown in the schematic diagram behind the gap as described in the GaN-based multi-band detector etching that Fig. 3 the present invention proposes, etching depth is till Sapphire Substrate 10.Three unit separate after the etching like this, do not have the influence of the coupling of dark current etc. each other, can suppress noise effectively.
Three unit that are divided into after finish in the etching gap, each unit contains identical three-decker.Proceed etching, first, second low bandgap material layer 15A and the 15B of first and second unit carried out etching, etch into and expose fully till first, second intermediate band-gap layer 13A, the 13B, the 3rd low bandgap material layer 15C should be protected during etching.
Protect the 3rd low bandgap material layer 15C equally and the second intermediate band-gap 13B carries out the etching second time, the first intermediate band-gap layer 13A etched away fully, till exposing the first wide bandgap material 11A fully.So just formed material structure part in the device architecture as shown in Figure 1, described three unit are respectively short-wave band probe unit A, medium wave band probe unit B and long-wave band probe unit C.
Make Schottky electrode back-to-back below.Utilize the photoetching process and the lift-off technology of standard, on the first wide bandgap material layer 11A, the second intermediate band-gap layer 13B and the 3rd low bandgap material layer 15C, make three pairs first, second, third Schottky electrodes 12,14 and 16 back-to-back respectively.Described Schottky electrode back-to-back generally can be that Ni, Au, Pt etc. have metal oxides such as the metal of higher work-functions or ITO.Require electrode and each layer material can both form Schottky contacts.
Carry out substrate at last and cut thin, polishing, cleavage, the single tube device package on base, is formed GaN-based multi-band detector.
In order to further specify GaN-based multi-band detector that the present invention proposes and preparation method thereof, be that example illustrates that this preparation of devices process (in conjunction with reference to figure 4) is specific as follows with two waveband AlGaN ultraviolet detector:
At first on the Sapphire Substrate 20 of twin polishing, utilize MOCVD epitaxial growth equipment growing AIN resilient coating 21 successively, involuntary doped with Al
0.4Ga
0.6N wide bandgap layer 22, involuntary doped with Al
0.3Ga
0.7N mid-gap layer 23, involuntary doped with Al
0.2Ga
0.8N narrow bandgap layer 25.Wherein, involuntary doped with Al
0.4Ga
0.6N wide bandgap material layer 22 is used for surveying energy greater than its band gap width Eg (Al
0.4Ga
0.6N) incident light; Involuntary doped with Al
0.3Ga
0.7N intermediate band-gap layer 23 is used for absorbing through Al as wave filtering layer
0.4Ga
0.6N wide bandgap layer 22 and energy are greater than its band gap width Eg (Al
0.3Ga
0.7N) incident light; Involuntary doped with Al
0.2Ga
0.8N narrow bandgap layer 25 is used for surveying energy range at Al
0.3Ga
0.7Band gap width Eg (the Al of N mid-gap layer 23
0.3Ga
0.7N) and Al
0.2Ga
0.8Band gap width Eg (the Al of N narrow bandgap layer 25
0.2Ga
0.8N) incident light between.
Adopt the method for dry etching to etch gap 60, make above-mentioned material be divided into two unit A and B, etching depth can reduce like this because the noise that the coupling between leakage current and two probe units brings till Sapphire Substrate 20.Proceed dry etching, protect Al in the unit B
0.2Ga
0.8N narrow bandgap layer 25B etches away the Al among the unit A
0.2Ga
0.8N narrow bandgap layer 25A and Al
0.3Ga
0.7N mid-gap layer 23A makes Al
0.4Ga
0.6N wide bandgap material layer 22A exposes fully, so just forms a step.
Technology such as adopt standard photoetching, plated film subsequently, peel off is respectively at Al
0.4Ga
0.6N wide bandgap material layer 22A and Al
0.2Ga
0.8Make Schottky electrode 24,26 back-to-back on the N narrow bandgap layer 25B.Reduce noise in order to improve barrier height, need rapid thermal anneal process to improve Schottky contacts.
Carry out at last that tube core is cut apart, pressure welding, encapsulation, make two waveband AlGaN ultraviolet detector.
Claims (12)
1, a kind of GaN-based multi-band detector is characterized in that, comprising:
One substrate;
One short-wave band probe unit comprises:
One first wide bandgap material layer, 1/3rd places of this first wide bandgap material layer epitaxially grown side on substrate;
A pair of first Schottky electrode back-to-back, this to first back-to-back Schottky electrode be grown on the first wide bandgap material layer;
One medium wave band probe unit comprises:
One second wide bandgap material layer, there is one first gap at this second wide bandgap material layer epitaxially grown middle(-)third place on substrate between this second wide bandgap material layer and the first wide bandgap material layer;
One second intermediate band-gap layer, this second intermediate band-gap layer epitaxially grown is on the second wide bandgap material layer;
A pair of second Schottky electrode back-to-back, this to second back-to-back Schottky electrode be grown on the second intermediate band-gap layer;
One long-wave band probe unit comprises:
One the 3rd wide bandgap material layer, there is one second gap at 1/3rd places of the 3rd wide bandgap material layer epitaxially grown opposite side on substrate between the 3rd wide bandgap material layer and the second wide bandgap material layer;
One the 3rd intermediate band-gap layer, the 3rd intermediate band-gap layer growth is on the 3rd wide bandgap material layer;
One the 3rd low bandgap material layer, the 3rd low bandgap material layer growth is on the 3rd intermediate band-gap layer;
The a pair of the 3rd Schottky electrode back-to-back, this to the 3rd back-to-back Schottky electrode be grown on the 3rd low bandgap material layer.
2, GaN-based multi-band detector according to claim 1 is characterized in that, wherein said substrate is the sapphire material of twin polishing.
3, GaN-based multi-band detector according to claim 1, it is characterized in that, the material of wherein said first, second, third wide bandgap material layer and second, third intermediate band-gap layer and the 3rd low bandgap material layer is a gallium nitride-based material, comprises AlN, GaN, InN and ternary thereof or multi-element compounds.
4, GaN-based multi-band detector according to claim 1, it is characterized in that, the band gap width of wherein said first, second, third wide bandgap material layer is greater than the band gap width of second, third intermediate band-gap layer, and the band gap width of second, third intermediate band-gap layer is greater than the band gap width of the 3rd low bandgap material layer.
5, GaN-based multi-band detector according to claim 1, it is characterized in that, the thickness of wherein said first, second, third wide bandgap material layer and second, third intermediate band-gap layer will be respectively greater than the absorption length of the light of its intrinsic band gap correspondence.
6, GaN-based multi-band detector according to claim 1 is characterized in that, wherein said first, second, third 3 pairs back-to-back Schottky electrode be strip or interdigitated structure, material is printing opacity, semi-transparent or lighttight material.
7, a kind of manufacture method of GaN-based multi-band detector is characterized in that, comprises the steps:
Step 1: on substrate, utilize epitaxial growth equipment growth wide bandgap material layer;
Step 2: the intermediate band-gap of on the wide bandgap material layer, growing;
Step 3: growth low bandgap material layer on intermediate band-gap;
Step 4: on the structure that abovementioned steps forms, first and second gaps of two channel form of etching, the degree of depth in this first and second gap is divided into first section low bandgap material layer of syllogic, second section low bandgap material layer and the 3rd section low bandgap material layer with the material on the substrate till the substrate;
Step 5: the low bandgap material layer of the first low bandgap material layer on first section and intermediate band-gap and second section is etched away;
Step 6: on the first wide bandgap material layer, the second intermediate band-gap layer, the 3rd low bandgap material layer, make first pair of Schottky electrode, second pair Schottky electrode, the 3rd pair Schottky electrode back-to-back back-to-back back-to-back respectively;
Step 7: carry out substrate and cut thin, polishing, cleavage, the single tube device package on base, is formed GaN-based multi-band detector.
8, the manufacture method of GaN-based multi-band detector according to claim 7 is characterized in that, wherein said substrate is the sapphire material of twin polishing.
9, the manufacture method of GaN-based multi-band detector according to claim 7, it is characterized in that, the material of wherein said wide bandgap material layer, intermediate band-gap layer and low bandgap material layer is a gallium nitride-based material, comprises AlN, GaN, InN and ternary thereof or multi-element compounds.
10, the manufacture method of GaN-based multi-band detector according to claim 7, it is characterized in that, the band gap width of wherein said first, second, third wide bandgap material layer is greater than the band gap width of second, third intermediate band-gap layer, and the band gap width of second, third intermediate band-gap layer is greater than the band gap width of the 3rd low bandgap material layer.
11, the manufacture method of GaN-based multi-band detector according to claim 7 is characterized in that, the thickness of wherein said wide bandgap material layer and intermediate band-gap layer should be respectively greater than the absorption length of the light of its intrinsic band gap correspondence.
12, the manufacture method of GaN-based multi-band detector according to claim 7, it is characterized in that, wherein said first, second, third 3 pairs back-to-back Schottky electrode be strip or interdigitated structure, material is semi-transparent or lighttight material.
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| CN100390511C (en) * | 2004-06-15 | 2008-05-28 | 中国科学院半导体研究所 | Gallium nitride ultraviolet chroma detector and production thereof |
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| CN116314215A (en) * | 2023-05-23 | 2023-06-23 | 中国科学院半导体研究所 | Multiband detector and method for manufacturing the same |
| CN116314215B (en) * | 2023-05-23 | 2023-08-22 | 中国科学院半导体研究所 | Multiband detector and method for manufacturing the same |
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