CN101621059A - The built-in bridge rectifier of integrating IC bonding pads - Google Patents
The built-in bridge rectifier of integrating IC bonding pads Download PDFInfo
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- CN101621059A CN101621059A CN200810130645A CN200810130645A CN101621059A CN 101621059 A CN101621059 A CN 101621059A CN 200810130645 A CN200810130645 A CN 200810130645A CN 200810130645 A CN200810130645 A CN 200810130645A CN 101621059 A CN101621059 A CN 101621059A
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- weld pad
- bridge rectifier
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Abstract
The invention provides a kind of built-in bridge rectifier of integrating IC bonding pads, comprise: a PMOS transistor; First nmos pass transistor, drain electrode is connected with first weld pad of a PMOS transistor drain in integrated circuit; The 2nd PMOS transistor, the transistorized source electrode of a PMOS is connected in first output node with the transistorized source electrode of the 2nd PMOS; And second nmos pass transistor, drain electrode is connected with second weld pad of the 2nd PMOS transistor drain in integrated circuit, and the source electrode of first nmos pass transistor is connected in second output node with the source electrode of second nmos pass transistor; Wherein, ac input signal is applied between first weld pad and second weld pad, and produces direct-flow output signal between first output node and second output node, and the voltage of first output node is greater than the voltage of second output node.The present invention not only saves the hardware cost of outside bridge rectifier, more dwindles the space of printed circuit board (PCB).
Description
Technical field
The present invention is relevant for semiconductor device, and particularly (integrated circuit, the IC) bridge rectifier in (bridge rectifier) are integrated IC interior bond pad (pad) and outside bridge rectifier relevant for being built in an integrated circuit in a kind of.
Background technology
Generally speaking, rectifier detects the radio signal except bringing, and (alternating current, AC) (direct current, DC) conversion of the signal of telecommunication, particularly AC power supplies are to the conversion of DC power supply to direct current in interchange in also a large amount of uses.
Fig. 1 is a configuration diagram of being located at the existing bridge rectifier of IC outside.With reference to figure 1, general bridge rectifier 100 is arranged at the outside of IC 120, utilizes 4 diode D1, D2, D3, D4, and the form that connects into an electric bridge is to provide full-wave rectification (full-wave rectification).The characteristic of bridge rectifier 100 is: the voltage (V that no matter puts on bridge rectifier 100 inputs
In1With respect to V
In2) polarity is plus or minus, the voltage of output (VPX is with respect to GND) polarity is constant forever.For example: V
In1With respect to V
In2Polarity of voltage be timing, diode D1, D3 conducting, the sense of current such as path La; V
In1With respect to V
In2Polarity of voltage when negative, diode D2, D4 conducting, the sense of current such as path Lb.Can observe from above-mentioned two commutation path La, Lb, electric current is constant by the direction of load circuit 110.
In order to reduce the hardware cost of outside bridge rectifier, therefore the present invention is proposed.
Summary of the invention
Because the problems referred to above, one of purpose of the present invention provides a kind of built-in bridge rectifier, it is again configuration IC interior existing electrostatic storage deflection (ESD) protection circuit and getting originally, not only save the hardware cost of outside bridge rectifier, more dwindle the space of printed circuit board (PCB), and must in IC, additionally not remake circuit.
For reaching above-mentioned purpose, built-in bridge rectifier of the present invention is applicable in the integrated circuit that in order to receive an ac input signal, to produce a direct current output signal, this bridge rectifier comprises: one the one PMOS transistor, short circuit between grid and source electrode; One first nmos pass transistor, short circuit between grid and source electrode, the drain electrode of this first nmos pass transistor is connected with one first weld pad of a PMOS transistor drain in this integrated circuit; One the 2nd PMOS transistor, short circuit between grid and source electrode, the transistorized source electrode of a PMOS is connected in one first output node with the transistorized source electrode of the 2nd PMOS; And, one second nmos pass transistor, short circuit between grid and source electrode, the drain electrode of this second nmos pass transistor is connected with one second weld pad of the 2nd PMOS transistor drain in this integrated circuit, and the source electrode of this first nmos pass transistor is connected in one second output node with the source electrode of this second nmos pass transistor; Wherein, this ac input signal is applied between this first weld pad and this second weld pad, and produces this direct-flow output signal between this first output node and this second output node, and the voltage of this first output node is greater than the voltage of this second output node.
Now the detailed description and the claim that cooperate following diagram, embodiment, will on address other purpose of the present invention and advantage and be specified in after.
Description of drawings
Fig. 1 is a configuration diagram of being located at the existing bridge rectifier of IC outside.
Fig. 2 shows that one is positioned at IC inside and is located at the other existing electrostatic storage deflection (ESD) protection circuit of weld pad IO.
Fig. 3 shows the configuration diagram of built-in bridge rectifier first embodiment of the present invention.
Fig. 4 demonstration is positioned at IC inside and is arranged at the other electrostatic storage deflection (ESD) protection circuit of existing output weld pad OUT and the schematic diagram of output buffer.
Fig. 5 shows the configuration diagram of built-in bridge rectifier second embodiment of the present invention.
Fig. 6 shows the configuration diagram of built-in bridge rectifier the 3rd embodiment of the present invention.
Fig. 7 shows the configuration diagram of built-in bridge rectifier the 4th embodiment of the present invention.
The main element symbol description:
100 bridge rectifiers
110,510 load circuits
300,500,600,700 built-in bridge rectifiers
The 410ESD protection circuit
420 output buffers
601,602,701 inverters
D1, D2, D3, D4 diode
P
1, P
12, P
22, P
11, P
22The PMOS transistor
N
1, N
12, N
22, N
21, N
11Nmos pass transistor
In1, in2, IN3, IN4, IO, IO1 weld pad
IO2, IO4, OUT, OUT1, OUT2 weld pad
Embodiment
Fig. 2 shows that one is positioned at IC inside and is located at the other existing electrostatic storage deflection (ESD) protection circuit (ESD protection circuit) of weld pad IO.The ESD protection circuit is the usefulness that is used for doing electrostatic discharge protective on the general integrated circuit specially, and this ESD protection circuit provides ESD current path, in order to avoid during esd discharge, electrostatic induced current flows into the IC internal circuit and causes damage.With reference to figure 2, can see two transistor P from the ESD protection circuit that weld pad IO is existing
1, N
1Grid and source electrode between short circuit, be equivalent to two diode in series in fact.
Fig. 3 shows the configuration diagram of built-in bridge rectifier first embodiment of the present invention.If it is further, that the ESD of two adjacent welding-pad IO1, IO2 is circuit integrated and connect as shown in Figure 3 transistor P
11The diode D that is equivalent to Fig. 1
1, transistor P
21Be equivalent to diode D
2, transistor N
11Be equivalent to diode D
4, transistor N
21Be equivalent to diode D
3, just form a built-in bridge rectifier 300.Therefore, originally put on the input signal of bridge rectifier 100 inputs, direct feed-in IC, and utilize two existing ESD protection circuits of weld pad IO1, IO2 script to do proper circuit configuration or connection, can form a built-in bridge rectifier 300, and then given up outer member, to save the space of hardware cost and printed circuit board (PCB).Certainly, the VDD that built-in bridge rectifier 300 rectifications are come out directly or indirectly (for example step-down is VDDL) as power supply, use for IC.
Note that and utilize IC weld pad and ESD protection circuit thereof that can not use to have with general output/input signal and conflict, reason be as follows as the application of built-in bridge rectifier of the present invention.The first, when being used as bridge rectifier, voltage VDD does not connect power supply, but directly uses the AC signal or the power supply of weld pad IO1, IO2 feed-in; And when being used as general output/input signal and using, voltage VDD must connect power supply.The second, when being used as bridge rectifier, the voltage of the voltage of weld pad IO1 or weld pad IO2 must be greater than voltage VDD, the ability conducting diode; And when being used as general output/input signal and using, the voltage of the voltage of weld pad IO1 and weld pad IO2 can only be less than or equal to voltage VDD, can't conducting diode.The 3rd, when being used as bridge rectifier, the polarity of voltage of two input IO1, IO2 must be reverse each other; And when being used as general output/input signal and using, the polarity of voltage of weld pad IO1, IO2 depends on that then it uses no certain certainty.Therefore, circuit designers can be adjusted the interlock circuit configuration to meet different application according to the functional requirement of integrated circuit.
Fig. 4 demonstration is positioned at IC inside and is arranged at the other electrostatic storage deflection (ESD) protection circuit of existing output weld pad (output pad) OUT and the schematic diagram of output buffer (output buffer).With reference to figure 4, be positioned at the existing output weld pad OUT of IC inside, generally can couple an ESD protection circuit 410 and an output buffer 420.Output buffer 420 is controlled by control signal Dx, Dy, and when Dx=VDD, Dy=GND, expression output buffer 420 is by forbidden energy, and this moment, the remaining ESD protection circuit 410 that can operate just is the equal of the circuit of Fig. 2 among Fig. 4.Another example is, an input weld pad (input pad) (figure does not show) that is provided with ESD protection circuit and input buffer circuit (input buffer), when its input buffer circuit during equally by forbidden energy, be left to operate the ESD protection circuit also be equivalent to the circuit of Fig. 2.
Fig. 5 shows the configuration diagram of built-in bridge rectifier second embodiment of the present invention.With reference to figure 5,, just form a built-in bridge rectifier 500 with original indivedual ESD circuit and output buffer configuration or the connections again that are provided with of two adjacent output weld pad OUT1, OUT2.Wherein, transistor P
12, N
12Grid be connected in a node DO1, and be coupled to output weld pad OUT2; Transistor P
22, N
22Grid be connected in a node DO2, and be coupled to output weld pad OUT1.The running of built-in bridge rectifier 500 of the present invention below is described in detail in detail.
Two inputs (promptly exporting weld pad OUT1, OUT2) of bridge rectifier 500 receive an ac input signal, so the voltage of output weld pad OUT1 is reverse each other with the voltage of output weld pad OUT2.When the voltage of exporting weld pad OUT1 is timing with respect to the voltage of exporting weld pad OUT2, because V
DO1=V
OUT2So=L is transistor P
12Conducting (on), transistor N
12(off) opens circuit; Comparatively speaking, because V
OUT1=V
DO2So=H is transistor P
22Open circuit, transistor N22 conducting, electric current can select the less path of resistance value to walk, and promptly flows along the direction of path Lc=＞load circuit 510=＞path Ld, and no longer by transistor P
11, N
21(resistance value is bigger).Otherwise, when the voltage of output weld pad OUT1 with respect to the voltage of output weld pad OUT2 when negative, because V
DO1=V
OUT2So=H is transistor N
12Conducting, transistor P
12Open circuit; Comparatively speaking, because V
OUT1=V
DO2So=L is transistor N
22Open circuit, transistor P
22Conducting, electric current can select the less path of resistance value to walk, and promptly the direction along path Le=＞load circuit 510=＞path Lf flows, and no longer by transistor P
21, N
11(resistance value is bigger).Can observe from commutation path, though the polarity of voltage of two inputs of bridge rectifier 500 can change, the polarity of voltage of two outputs (VDD is with respect to GND) remains unchanged forever.
Moreover, voltage swing amplitude compared to existing bridge rectifier 100 and built-in bridge rectifier of the present invention 300 outputs has 2 * Vt (pressure drop of about 2 * 0.6V), in second embodiment of the invention, because electric current no longer selects to flow through the transistor (P that configuration becomes diode
11, N
11, P
21, N
21), but the MOS transistor (P of conducting is flow through in selection
12﹠amp; N
22, or P
22﹠amp; N
12), and because rectified current only produces the pressure drop (different pressure drops being arranged according to transistorized different size) of about 0.1V by the conducting MOS transistor, therefore, the output voltage amplitude of fluctuation of built-in bridge rectifier 500 of the present invention can be more near the input voltage swing amplitude.
On the other hand, because the frequency of general AC signal may not be fixed, when an AC signal is applied in two inputs (output weld pad OUT1, OUT2) of bridge rectifier 500, be used as the power supply use if the direct current that output VDD, GND produce output brings, the signal frequency of then carrying thereon will lose.For addressing the above problem, the present invention utilizes an inverter (inverter) or a potential transferring devices (levelshifter) to be coupled to an input of bridge rectifier of the present invention, so that input signal is taken out, carries out demodulation for the next stage circuit.Certainly, also can utilize two inverters or two potential transferring devices to be coupled to two inputs of bridge rectifier of the present invention simultaneously,, come demodulation to take out two (or wherein any) input signals again according to the application and the demand of circuit.For example, can utilize two input weld pads (being assumed to be IN3, IN4) that are provided with ESD protection circuit and input buffer circuit, and implement in conjunction with the circuit of first embodiment, be illustrated in figure 6 as the configuration diagram of built-in bridge rectifier the 3rd embodiment of the present invention.Perhaps, also can utilize an I/O weld pad (being assumed to be IO4) that is provided with ESD protection circuit, input buffer circuit and output buffer, and implement in conjunction with the circuit of second embodiment, be illustrated in figure 7 as the configuration diagram of built-in bridge rectifier the 4th embodiment of the present invention.
With reference to figure 6, because the VDD that built-in bridge rectifier 600 rectifications are come out may be directly or indirectly as power supply, so VDD may be more than or equal to VDDL, circuit designers can be according to circuit requirements, see through inverter (601,602) and obtain two input signals (DA1, DA2) (or one of them), carry out demodulation to offer the next stage circuit.With reference to figure 7, present embodiment hypothesis circuit designers need only see through inverter 701 and obtain input signal DA3, carries out demodulation to offer the next stage circuit, so do not need output weld pad OUT2 configuration again.Built-in bridge rectifier 600,700 not only can obtain the correct frequency of input exchange signal (signal on weld pad IN3, IN4, the IO4), can also adjust signal level (changing into VDDL) simultaneously, reach signal rectification, frequency demodulation and adjust the accurate triple function in position from VDD.
The specific embodiment that is proposed in the detailed description of preferred embodiment is only in order to convenient explanation technology contents of the present invention, but not with narrow sense of the present invention be limited to the foregoing description, in the situation that does not exceed spirit of the present invention and claim, the many variations of being done is implemented, and all belongs to scope of the present invention.
Claims (17)
1. a built-in bridge rectifier is applicable in the integrated circuit, in order to receive an ac input signal,, it is characterized in that described built-in bridge rectifier comprises to produce a direct current output signal:
One the one PMOS transistor, short circuit between grid and source electrode;
One first nmos pass transistor, short circuit between grid and source electrode, the drain electrode of described first nmos pass transistor is connected with one first weld pad of a described PMOS transistor drain in described integrated circuit;
One the 2nd PMOS transistor, short circuit between grid and source electrode, the transistorized source electrode of a described PMOS is connected in one first output node with the transistorized source electrode of described the 2nd PMOS; And
One second nmos pass transistor, short circuit between grid and source electrode, the drain electrode of described second nmos pass transistor is connected with one second weld pad of described the 2nd PMOS transistor drain in described integrated circuit, and the source electrode of described first nmos pass transistor is connected in one second output node with the source electrode of described second nmos pass transistor;
Wherein, described ac input signal is applied between described first weld pad and described second weld pad, and produce described direct-flow output signal between described first output node and described second output node, and the voltage of described first output node is greater than the voltage of described second output node.
2. built-in bridge rectifier as claimed in claim 1 is characterized in that, when described first weld pad was an input weld pad, an input buffer that is connected with described first weld pad was by forbidden energy.
3. built-in bridge rectifier as claimed in claim 1 is characterized in that, when described first weld pad was an input weld pad, the output of one first input buffer that is connected with described first weld pad was in order to the described ac input signal of demodulation.
4. built-in bridge rectifier as claimed in claim 1 is characterized in that, when described first weld pad was an output weld pad, one first output buffer that is connected with described first weld pad was by forbidden energy.
5. built-in bridge rectifier as claimed in claim 1 is characterized in that, when described second weld pad was an input weld pad, one second input buffer that is connected with described second weld pad was by forbidden energy.
6. the described built-in bridge rectifier of claim 1 is characterized in that, when described second weld pad was an input weld pad, the output of one second input buffer that is connected with described second weld pad was in order to the described ac input signal of demodulation.
7. built-in bridge rectifier as claimed in claim 1 is characterized in that, when described second weld pad was an output weld pad, one second output buffer that is connected with described second weld pad was by forbidden energy.
8. built-in bridge rectifier as claimed in claim 1 is characterized in that, the voltage of the voltage of described first weld pad or described second weld pad is greater than the voltage of described first output node.
9. built-in bridge rectifier as claimed in claim 1 is characterized in that, what power supply described first output node does not take over.
10. built-in bridge rectifier as claimed in claim 1 is characterized in that, the voltage of the voltage of described first weld pad and described second weld pad is reverse each other.
11. built-in bridge rectifier as claimed in claim 1 is characterized in that, described built-in bridge rectifier also comprises:
One the 3rd PMOS transistor, source electrode are connected to described first output node, and drain electrode is connected to described first weld pad, and grid is connected to described second weld pad;
One the 3rd nmos pass transistor, source electrode are connected to described second output node, and drain electrode is connected to described first weld pad, and grid is connected to described second weld pad;
One the 4th PMOS transistor, source electrode are connected to described first output node, and drain electrode is connected to described second weld pad, and grid is connected to described first weld pad; And
One the 4th nmos pass transistor, source electrode are connected to described second output node, and drain electrode is connected to described second weld pad, and grid is connected to described first weld pad.
12. built-in bridge rectifier as claimed in claim 11 is characterized in that, when described first weld pad was an I/O weld pad, the output of one first input buffer that is connected with described first weld pad was in order to the described ac input signal of demodulation.
13. built-in bridge rectifier as claimed in claim 11 is characterized in that, when described second weld pad was an I/O weld pad, the output of one second input buffer that is connected with described second weld pad was in order to the described ac input signal of demodulation.
14. built-in bridge rectifier as claimed in claim 11 is characterized in that, when described first weld pad was an I/O weld pad, one first input buffer that is connected with described first weld pad was by forbidden energy.
15. built-in bridge rectifier as claimed in claim 11 is characterized in that, when described second weld pad was an I/O weld pad, one second input buffer that is connected with described second weld pad was by forbidden energy.
16. built-in bridge rectifier as claimed in claim 1 is characterized in that, described first weld pad more is connected to the input of one first potential transferring devices, and the output of described first potential transferring devices is in order to the described ac input signal of demodulation.
17. built-in bridge rectifier as claimed in claim 1 is characterized in that, described second weld pad more is connected to the input of one second potential transferring devices, and the output of described second potential transferring devices is in order to the described ac input signal of demodulation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810130645A CN101621059A (en) | 2008-07-02 | 2008-07-02 | The built-in bridge rectifier of integrating IC bonding pads |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810130645A CN101621059A (en) | 2008-07-02 | 2008-07-02 | The built-in bridge rectifier of integrating IC bonding pads |
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| Publication Number | Publication Date |
|---|---|
| CN101621059A true CN101621059A (en) | 2010-01-06 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200810130645A Pending CN101621059A (en) | 2008-07-02 | 2008-07-02 | The built-in bridge rectifier of integrating IC bonding pads |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103151944A (en) * | 2012-10-16 | 2013-06-12 | 香港应用科技研究院有限公司 | A self-starting transistor full-wave rectifier for alternating current-direct current conversion on a chip |
| CN103560686A (en) * | 2012-10-16 | 2014-02-05 | 香港应用科技研究院有限公司 | Diode-Less Full-Wave Rectifier for Low-Power On-Chip AC-DC Conversion |
-
2008
- 2008-07-02 CN CN200810130645A patent/CN101621059A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103151944A (en) * | 2012-10-16 | 2013-06-12 | 香港应用科技研究院有限公司 | A self-starting transistor full-wave rectifier for alternating current-direct current conversion on a chip |
| CN103560686A (en) * | 2012-10-16 | 2014-02-05 | 香港应用科技研究院有限公司 | Diode-Less Full-Wave Rectifier for Low-Power On-Chip AC-DC Conversion |
| CN103151944B (en) * | 2012-10-16 | 2015-01-14 | 香港应用科技研究院有限公司 | A self-starting transistor full-wave rectifier for alternating current-direct current conversion on a chip |
| US8964436B2 (en) | 2012-10-16 | 2015-02-24 | Hong Kong Applied Science & Technology Research Institute Company, Limited | Self-starting transistor-only full-wave rectifier for on-chip AC-DC conversion |
| CN103560686B (en) * | 2012-10-16 | 2016-04-27 | 香港应用科技研究院有限公司 | The diodeless full-wave rectifier of AC/DC conversion on lower powered chip |
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Open date: 20100106 |