CN101610631A - The apparatus and method that are used for service load - Google Patents

The apparatus and method that are used for service load Download PDF

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Publication number
CN101610631A
CN101610631A CNA2008101252254A CN200810125225A CN101610631A CN 101610631 A CN101610631 A CN 101610631A CN A2008101252254 A CNA2008101252254 A CN A2008101252254A CN 200810125225 A CN200810125225 A CN 200810125225A CN 101610631 A CN101610631 A CN 101610631A
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resistance
transistor
anode
controlled rectifier
silicon controlled
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罗志刚
杜超洪
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Osram GmbH
PATRA Patent Treuhand Munich
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PATRA Patent Treuhand Munich
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Abstract

Provide a kind of can making to load on the device of working in more than one states by switch on wall, comprise: the variable voltage generation unit, be configured to produce variable output voltage according to the described power supply that is used for the device of service load according to shutoff and the connection at interval of at least one preset time, described at least one preset time is that described power supply is connected the time of being experienced from turn-offing to each time under described load work at present state at interval; Driver element is configured to change the output drive signal that it is used for service load in response to the variable output voltage that described variable voltage generation unit produces, so that described loading under more than one states corresponding with described variable output voltage worked.Also provide a kind of being used for to come method of operating is carried out in load by device as mentioned above, and the load equipment that includes said apparatus.By the present invention, can directly replace non-desk lamp with dimmer switch and need not original incoming line is transformed with multistage desk lamp with dimmer switch.

Description

The apparatus and method that are used for service load
Technical field
Present invention relates in general to the apparatus and method of service load, more particularly, the present invention relates to a kind ofly can make load, for example the desk lamp with dimmer switch apparatus and method of in more than one states, working.
Background technology
Because the shortage and the greenhouse effect of the social energy now, many countries and government thereof all emphasize green illumination.Therefore, as the method for energy savings, light regulating technology becomes more and more popular at lighting field.For most of non-desk lamps with dimmer switch, need outside lamp, adopt additional light adjusting circuit usually if realize tunable optical.For example, in a kind of specific implementation, utilize the light adjusting circuit that input supply voltage is carried out copped wave.This light adjusting circuit generally is installed in the outside of lamp and ballast, the promptly common controllable silicon dimmer that is installed on the wall.But utilize controllable silicon dimmer to carry out the incoming line that light modulation need be reequiped original non-desk lamp with dimmer switch, that is, must change current switch on wall circuit.So the expense of this desk lamp with dimmer switch and the complexity of structure of modification are difficult to accept to many users.
Summary of the invention
For this reason, the invention provides a kind of can making and load on the apparatus and method of working in more than one states by switch on wall.
According to one embodiment of present invention, provide a kind of device that is used for service load, comprising:
The variable voltage generation unit, it is configured to produce variable output voltage according to the described power supply that is used for the device of service load according to shutoff and the connection at interval of at least one preset time, and described at least one preset time is that described power supply is connected the time of being experienced from turn-offing to each time under described load work at present state at interval; With
Driver element, it is configured to change the output drive signal that it is used for service load in response to the variable output voltage that described variable voltage generation unit produces, so that described loading under more than one states corresponding with described variable output voltage worked.
According to another embodiment of the invention, provide a kind of being used for to come method of operating is carried out in load, comprising by the device of aforesaid service load:
Be in described load under the situation of current state, turn-off and connect the power supply of the device of described service load at interval according to described at least one preset time, with based on described at least one preset time at interval in the corresponding time interval produce described variable output voltage, thereby make described loading on more than one states corresponding under work with described variable output voltage.
According to still another embodiment of the invention, provide a kind of aforesaid load equipment that is used for the device of service load that comprises.
By the present invention, can be directly with multistage, for example three grades of desk lamps with dimmer switch (power and light output all are multistage) are replaced non-desk lamp with dimmer switch, perhaps non-desk lamp with dimmer switch are equipped with device of the present invention and are configured to desk lamp with dimmer switch, and need not incoming line to original non-desk lamp with dimmer switch, for example switch on wall is transformed.Simple in structure, simple operation.
Description of drawings
By the detailed description of carrying out below with reference to accompanying drawing, other purposes of the present invention, advantage, characteristics and beneficial effect will become obvious.Identical or function corresponding parts are represented with identical or corresponding Reference numeral in each accompanying drawing, in the accompanying drawings:
Fig. 1 is the circuit diagram that makes first example that loads on the device of working in three kinds of different conditions according to an embodiment of the invention;
Fig. 2 is the circuit diagram that makes second example that loads on the device of working in three kinds of different conditions according to an embodiment of the invention;
Fig. 3 is the circuit diagram that makes the 3rd example that loads on the device of working in three kinds of different conditions according to an embodiment of the invention;
Fig. 4 is the circuit diagram that makes the 4th example that loads on the device of working in three kinds of different conditions according to an embodiment of the invention;
Fig. 5 is the circuit diagram that makes the 5th example that loads on the device of working in three kinds of different conditions according to an embodiment of the invention;
Fig. 6 is the circuit diagram that makes the 6th example that loads on the device of working in three kinds of different conditions according to an embodiment of the invention;
Fig. 7 comprises the circuit theory sketch that makes the load operation system that loads on the device of working in more than one states according to an embodiment of the invention.
Embodiment
Fig. 7 comprises the circuit theory sketch that makes the load operation system that loads on the device of working in more than one states according to an embodiment of the invention.As shown in Figure 7, the d. c. voltage signal S1 that communication power supply obtains by rectification circuit is input to according to of the present invention making and loads on the device 100 of working in more than one states, and the drive signal S2 of its output controls the switching frequency of switching tube so that switching tube produces high frequency waves.These high frequency waves are used to drive load and carry out work.As shown in Figure 7, load on the device 100 of working in more than one states and comprise variable voltage generation unit 110 and driver element 120 (following will the detailed description in detail) according to of the present invention making.Variable voltage generation unit 110 is configured to according to making the power supply that loads on the device 100 of working in more than one states produce variable output voltage according to shutoff and the connection at interval of at least one preset time, and described at least one preset time is that described power supply is connected the time of being experienced from turn-offing to each time under described load work at present state at interval.Driver element 120 is configured to change the output drive signal that it is used for service load in response to the variable output voltage that described variable voltage generation unit produces, so that described loading under more than one states corresponding with described variable output voltage worked.As shown in Figure 7, in the present embodiment, realize turning on and off of communication power supply by switch.Load can be a resonant load for example, such as desk lamp with dimmer switch, but the invention is not restricted to this.For the sake of brevity, with desk lamp with dimmer switch, for example gaseous discharge lamp was that example is carried out, but it will be appreciated by those skilled in the art that this is exemplary rather than restrictive during specific embodiment was below described, and the present invention can be applicable to any resonant load.
Describe the circuit of each object lesson that makes the structural arrangements that loads on the device 100 of working in more than one states of embodiments of the invention as shown in Figure 7 in detail below in conjunction with Fig. 1-6.
In following each example, integrated circuit modules IC is corresponding to making the building block driver element 120 that loads on the device 100 of working in more than one states among Fig. 1, in Fig. 1-6, represent with Reference numeral 120-1 to 120-6 respectively, the circuit that couples with IC is represented with Reference numeral 110-1 to 110-6 respectively in Fig. 1-6 corresponding to the building block variable voltage generation unit 110 of device 100.In each example, IC has the function that can change its output drive signal by its input pin 2 (VDIM) direct voltage, and this output drive signal is corresponding to the output drive signal S2 shown in Fig. 7, and this signal S2 is not shown in Fig. 1-6.Specifically, for IC, the frequency f of the input voltage V of its pin VDIM and the drive signal of its output is inversely proportional to.Make IC institute switch driven pipe produce high frequency waves thus with similar frequency characteristic.Because according to the resonant load electrical characteristics of desk lamp with dimmer switch for example, the frequency f of its power output P and drive signal is inversely proportional to, therefore, V is directly proportional with P.Can realize this function of IC in each example by the suitable types of selecting existing integrated circuits.In addition, only show IC in each example with implement the relevant a part of pin of the present invention.Wherein, VCC SUPPLY is meant the resonant load feedback, serves as the power supply of IC after resonant load work.Because IC just starts power supply from what VDC obtained, and is fainter, and in fact running current is that VCC SUPPLY by feedback provides.In addition, the voltage VDC in each routine circuit is corresponding to the rectified voltage signal S1 shown in Fig. 7, and the switch on wall of wherein mentioning is corresponding to the switch shown in Fig. 7.
Example 1
Fig. 1 is the circuit diagram that makes first example that loads on the device 100 of working in three kinds of different conditions according to an embodiment of the invention.In this example, make the switch on wall (not shown) at interval according to preset time, for example several seconds, to close then and open, resonant load can be worked in three kinds of different conditions.The frequency of supposing driver element 120-1 in first state (being IC in example 1) output drive signal is f A1, the resonant load power output is P B1, the voltage of the VDIM pin of IC is V A1, the frequency of IC output drive signal is f in second state A2, the resonant load power output is P A2, the voltage of the VDIM pin of IC is V A2, the frequency of IC output drive signal is f in the third state A3, the resonant load power output is P A3, the voltage of the VDIM pin of IC is V A3, then their pass is: V A1＞V A2＞V A3, f A1＜f A2＜f A3, P A1＞P A2＞P A3The following describes the concrete formation and the operation principle thereof of circuit.
Particular circuit configurations is at first described.As shown in Figure 1, DC power supply VDC is the output dc voltage of circuit communication power supply behind over commutation, resistance R 19, R20 constitute the startup network of IC, the collector electrode of weak signal NPN transistor Q5 is connected to the contact of resistance R 19 and R20, the grounded emitter of transistor Q5, resistance R 15 is connected between the collector electrode of the base stage of transistor Q5 and NPN transistor Q2, and resistance R 8 is connected between the collector electrode of DC power supply VDC and transistor Q2; Capacitor C 5 is connected between the collector electrode and ground of transistor Q2, the grounded emitter of transistor Q2; Resistance R 6 is connected between the anode of the base stage of transistor Q2 and Zener diode Z2, and the negative electrode of this Zener diode Z2 is connected in the contact between resistance R 2 and the silicon controlled rectifier SCR1 negative electrode, the other end ground connection of resistance R 2; Resistance R 1 is connected between the anode and DC power supply VDC of silicon controlled rectifier SCR1; Resistance R 17 is connected between the base stage of the VCC pin of IC and transistor Q1, and the intermediate contact of resistance R 3 and R4 is connected to the collector electrode of NPN transistor Q1, the other end ground connection of resistance R 3, another termination DC power supply VDC of resistance R 4; The grounded emitter of transistor Q1; The negative electrode of Zener diode Z1 is connected in the contact of resistance R 4 and R3, and the anode of Zener diode Z1 connects the anode of diode D1, and the negative electrode of this diode D1 connects the grid of silicon controlled rectifier SCR1; Capacitor C 3 is connected between the grid and ground of silicon controlled rectifier SCR1.The anode of diode D2 connects the anode of Zener diode Z2, and capacitor C 4 is connected between the negative electrode and ground of diode D2; Resistance R 5 is connected between the grid of the negative electrode of diode D2 and silicon controlled rectifier SCR2, and the anode of silicon controlled rectifier SCR2 connects the anode of silicon controlled rectifier SCR1, and resistance R 7 is connected between the negative electrode and ground of silicon controlled rectifier SCR2; The voltage network that resistance R 9 and R10 constitute is connected between the anode and ground of silicon controlled rectifier SCR1, and the contact between resistance R 9 and the R10 is connected to the variable voltage input pin VDIM of IC; Resistance R 11 is connected between the anode of the base stage of transistor Q3 and Zener diode Z2, the grounded emitter of transistor Q3, the collector electrode of this transistor Q3 is connected in the intermediate contact of the voltage network that comprises resistance R 13 and R14, and this voltage network is connected between DC power supply VDC and the ground.Resistance R 12 is connected between the base stage of the collector electrode of transistor Q3 and transistor Q4, and resistance R 16 is connected between the collector electrode of the negative electrode of silicon controlled rectifier SCR2 and transistor Q4, the grounded emitter of transistor Q4.
The operation principle of foregoing circuit is then described.When for the first time switch on wall being opened, DC power supply VDC is by resistance R 19 and R20 drive IC, simultaneously, the voltage of the VCC pin of IC is extremely saturated by resistance R 17 driving transistors Q1, make the voltage of Zener diode Z1 negative electrode be lower than its puncture voltage, silicon controlled rectifier SCR1 can not be triggered.Subsequently, IC startup and output drive signal make resonant load work.The feedback of resonant load is served as the input of VCC pin, is referred to herein as VCC SUPPLY.Because the big capacity of capacitor C 5, before IC starts, electric current by resistance R 8 and R15 can not make the voltage of transistor Q5 collector electrode be lower than the threshold voltage of the VCC pin of IC, but after IC started, capacitor C 5 was charged to the voltage that can make transistor Q5 saturation conduction.During this period, owing to there is not trigger voltage, silicon controlled rectifier SCR1 and SCR2 can not be triggered.The dc voltage that puts on the VDIM pin is from the voltage network that comprises resistance R 1, R9 and R10.The dc voltage of supposing this VDIM pin is V A1, the frequency of IC output drive signal is f A1, correspondingly, the power output of resonant load is P A1
When wanting to switch to second power output, that is, make when resonant load is worked that switch on wall is closed, and then at preset time at interval, for example several seconds are interior with switch opens under second state.The operation principle of entire circuit is as follows: make by switch on wall before communication power supply closes, because capacitor C 5 is charged to saturated, so a period of time after communication power supply is closed, in for example several seconds, capacitor C 5 is slowly discharged, the residual voltage on the capacitor C 5 still can driving transistors Q5 to saturated.At preset time at interval, in for example several seconds, switch on wall being opened once more, is low because electric capacity Q5 is in the voltage of the VCC pin of saturation condition so IC, thereby IC can not be activated before the voltage of VCC pin surpasses the threshold voltage of VCC pin.Subsequently, because the voltage of VCC pin is low, transistor Q1 can not be driven to saturated, and the voltage rising and the Zener diode Z1 of its collector electrode are breakdown, and silicon controlled rectifier SCR1 is triggered subsequently.Silicon controlled rectifier SCR1 is triggered after the conducting, and Zener diode Z2 is breakdown, and capacitor C 4 is recharged, by the voltage triggered silicon controlled rectifier SCR2 on the capacitor C 4.Since then, extremely saturated by the current drive transistor Q3 of resistance R 11, the voltage that makes transistor Q3 collector electrode is low, so transistor Q4 turn-offs.Current drive transistor Q2 by resistance R 6 is extremely saturated, and capacitor C 5 slowly is discharged to low-voltage, so transistor Q5 turn-offs, the voltage of its collector electrode enough restarts IC.After IC was restarted, transistor Q1 was extremely saturated by the driven of VCC pin once more.But this moment, because silicon controlled rectifier SCR1 and SCR2 be switched on, so the voltage of VDIM pin changes, and in this state, supposes that this voltage is V A2, then the frequency of IC output drive signal becomes f accordingly A2, correspondingly, the resonant load power output is P A2As previously mentioned, because the frequency of the output drive signal of IC reduces when the voltage of VDIM pin raises, then obtain relation: V A1＞V A2, f A1＜f A2, P A1＞P A2The predetermined time interval that makes switch close in this case to open then can be determined by the value of suitably setting resistance R 15 and C5 as required.
When wanting to switch to the 3rd power output, that is, make when resonant load is worked under the third state, can carry out with above-mentioned second state in similar operation, that is, switch on wall is closed for the second time, at preset time at interval, in for example several seconds, switch on wall is closed once more open then.The operation principle of entire circuit is as follows: make before switch on wall closes for the second time, because electric capacity Q2 is saturated so voltage capacitor C 5 is low, and the voltage of capacitor C 4 be height.Switch on wall is closed, in the preset time interval, switch on wall is opened for the third time subsequently.Because the capacity of capacitor C 5 is big, before IC started, the electric current by resistance R 8 and R15 can not make the voltage of transistor Q5 collector electrode be lower than the threshold voltage of the VCC pin of 1C.After IC started, capacitor C 5 was charged to the voltage that can make transistor Q5 saturated.Simultaneously, the voltage of VCC pin to saturated, makes the voltage of Zener diode Z1 negative electrode be lower than its puncture voltage by resistance R 17 driving transistors Q1, and silicon controlled rectifier SCR1 can not be triggered.Transistor Q3 does not have drive signal, so transistor Q3 turn-offs.But during this period, the residual voltage of capacitor C 4 still enough triggers silicon controlled rectifier SCR2, and after SCR2 was triggered conducting, transistor Q4 was driven to saturated.In this state, the input voltage of supposing the VDIM pin is V A3, then the frequency of IC output drive signal becomes f accordingly A3, correspondingly, the resonant load power output is P A3By resistance R 16 suitably is set, the value of R2 and R7 can obtain relation: f A1＜f A2＜f A3, P A1＞P A2＞P A3The predetermined time interval that makes wall close in this case to open then can be determined by the value of suitably setting capacitor C 4 and resistance R 5 as required.
As mentioned above, loading in the device 100 of working in more than one states according to of the present invention making, driver element 120-1, be the IC in this example, output drive signal be used for the driving switch pipe, by control, realize adjusting to the load power output to switching tube switch output signal frequency, so just make load under different states, to work, for as the desk lamp with dimmer switch of resonant load, being exactly to have realized light modulation.
From above-mentioned operation principle to circuit shown in Figure 1 as can be known, make the variable voltage generation unit 110-1 that is used to produce variable output voltage in the device 100 that loads on work under more than one states comprise that time-delay subelement and voltage switch subelement according to an embodiment of the invention.The time-delay subelement be configured to its be configured to generate with described power supply according to described at least one preset time at interval shutoff and connect time-delay state corresponding, the variable voltage generation unit.As shown in Figure 1, the function of time-delay subelement mainly realizes by the delay circuit of being made up of resistance, electric capacity and transistor.Particularly, in Fig. 1, the time-delay subelement mainly comprises: resistance R 6, R8, R15, R19, R20, Zener diode Z2, transistor Q2, Q5, capacitor C 5.Voltage switches subelement and is configured to switch the variable output voltage that is produced by described variable voltage generation unit according to the time-delay state that described time-delay subelement is produced.As shown in Figure 1, the function of voltage switching subelement is mainly passed through by resistance, electric capacity, transistor, and the circuit that Zener diode and silicon controlled rectifier are formed is realized.Particularly, in Fig. 1, voltage switches subelement and mainly comprises: resistance R 1, R2, R3, R4, R5, R7, R9, R10, R11, R12, R13, R14, R16, R17, capacitor C 3, C4, transistor Q1, Q3, Q4, diode D1, D2, silicon controlled rectifier SCR1, SCR2, Zener diode Z1, Z2.Understand easily, at silicon controlled rectifier SCR1, all not conductings of SCR2, all conductings and having only under the situation of one of them conducting, the voltage that is applied to the VDIM pin place of IC is different, and the voltage V under the various states in this example A1, V A2And V A3Correspond respectively to silicon controlled rectifier SCR1, all not conductings of SCR2, all conductings and have only the situation of SCR2 conducting.
Example 2
Fig. 2 is the circuit diagram that makes second example that loads on the device 100 of working in three kinds of different conditions according to an embodiment of the invention.Circuit and the circuit among Fig. 1 of Fig. 2 are similar, just do not comprise resistance R 11, R12, R13, R14, R16, transistor Q3 and Q4 in the circuit of Fig. 2.Concrete annexation is shown in Figure 2, is not described in detail at this.
In this example, make the switch on wall (not shown) at interval according to preset time, for example several seconds, to close then and open, resonant load can be worked in three kinds of different conditions.The frequency of supposing the output drive signal of driver element 120-2 in first state (being IC in example 2) is f B1, the resonant load power output is P B1, the voltage of the VDIM pin of IC is V B1, the frequency of IC output drive signal is f in second state B2, the resonant load power output is P B2, the voltage of the VDIM pin of IC is V B2, the frequency of IC output drive signal is f in the third state B3, the resonant load power output is P B3, the voltage of the VDIM pin of IC is V B3, then their pass is: V B1＞V B3＞V B2, f B1＜f B3＜f B2, P B1＞P B3＞P B2The following describes the concrete formation and the operation principle thereof of circuit.
In Fig. 2, when the operation principle of switch on wall after opening for the first time identical with Fig. 1.The voltage of supposing the VDIM pin is V B1, then the frequency of IC output drive signal becomes f accordingly B1, the power output of resonant load is P B1
When switch on wall is closed, the operation principle after opening for the second time in the preset time interval then is identical with Fig. 1.The voltage of supposing the VDIM pin is V B2, then the frequency of IC output drive signal becomes f accordingly B2, the power output of resonant load is P B2As mentioned above, the frequency of IC reduces when the voltage of VDIM pin raises, and then obtains relation: V B1＞V B2, f B1＜f B2, P B1＞P B2
When switch on wall is closed, operation principle and Fig. 1 after opening for the third time in the preset time interval then are different.Owing to there is not transistor Q4, the voltage of supposing the VDIM pin is V B3, then it satisfies V B3＞V B2, the frequency of IC output drive signal becomes f accordingly B3, the power output of resonant load is P B3By suitable circuit parameter is set, can obtain relation: V B1＞V B3＞V B2, f B1＜f B3＜f B2, P B2＜P B3＜P B1
From above-mentioned operation principle to circuit shown in Figure 2 as can be known, in making the example 2 that loads on the device 100 of working under more than one states according to an embodiment of the invention, the variable voltage generation unit 110-2 that is used to produce variable output voltage comprises that time-delay subelement and voltage switch subelement, realize separately with above-mentioned circuit shown in Figure 1 in time-delay subelement and the voltage similar function of switching subelement.In example 2, as shown in Figure 2, the function of time-delay subelement mainly realizes by the delay circuit of being made up of resistance, electric capacity and transistor.Particularly, the time-delay subelement mainly comprises: resistance R 6, R8, R15, R19, R20, Zener diode Z2, transistor Q2, Q5, capacitor C 5.The function of voltage switching subelement is mainly passed through by resistance, electric capacity, transistor, and the circuit that Zener diode and silicon controlled rectifier are formed is realized.Particularly, voltage switching subelement mainly comprises: resistance R 1, R2, R3, R4, R5, R7, R9, R10, R17, capacitor C 3, C4, transistor Q1, diode D1, D2, silicon controlled rectifier SCR1, SCR2, Zener diode Z1, Z2.
Example 3
Fig. 3 is the circuit diagram that makes the 3rd example that loads on the device 100 of working in three kinds of different conditions according to an embodiment of the invention.The difference of circuit among Fig. 3 and the circuit of Fig. 1 is: take resistance R 11, R14, R16 and transistor Q4 away, and annexation is changed as follows: resistance R 12 is connected between the base stage of the anode of Zener diode Z2 and transistor Q3, the collector electrode of transistor Q3 connects the VDIM pin, resistance R 13 is connected between the emitter and ground of transistor Q3, and resistance R 2 and R7 connect the VDIM pin.Concrete annexation is shown in Figure 3, is not described in detail at this.
In this example, make the switch on wall (not shown) at interval according to preset time, for example several seconds, to close then and open, resonant load can be worked in three kinds of different conditions.The frequency of supposing driver element 120-3 in first state (being IC in the example 3) output drive signal is f C1, the resonant load power output is P C1, the voltage of the VDIM pin of IC is V C1, the frequency of IC output drive signal is f in second state C2, the resonant load power output is P C2, the voltage of the VDIM pin of IC is V C2, the frequency of IC output drive signal is f in the third state C3, the resonant load power output is P C3, the voltage of the VDIM pin of IC is V C3, then their pass is: V C3＞V C2＞V C1, f C1＞f C2＞f C3, P C3＞P C2＞P C1
In Fig. 3, after switch on wall was being opened for the first time, operation principle was identical with Fig. 1.The voltage of the VDIM pin of hypothesis driven unit IC is V C1, then the frequency of IC output drive signal becomes f accordingly C1, power output is P C1
When switch on wall is closed, after opening for the second time in the preset time interval then, before silicon controlled rectifier SCR1 was triggered, operation principle was identical with Fig. 1, and after silicon controlled rectifier SCR1 was switched on, transistor Q3 was driven to saturated.Suppose that this moment, the voltage of VDIM pin was V C2, can make V by suitable value is set for R13 C2＞V C1Then obtain relation: V C2＞V C1, f C2＜f C1, P C2＞P C1
Close when making switch on wall, after in the preset time interval, opening for the third time then, before silicon controlled rectifier SCR2 is triggered, operation principle is identical with Fig. 1, and after silicon controlled rectifier SCR2 is switched on, because silicon controlled rectifier SCR1 is not triggered, transistor Q3 turn-offs, and the voltage of supposing the VDIM pin is V C3, by making V for resistance R 13, R2, R7, R9 and R10 are provided with suitable value C3＞V C2＞V C1, then obtain relation: V C3＞V C2＞V C1, f C3＜f C2＜f C1, P C3＞P C2＞P C1
From above-mentioned operation principle to circuit shown in Figure 3 as can be known, in making the example 3 that loads on the device 100 of working under more than one states according to an embodiment of the invention, the variable voltage generation unit 110-3 that is used to produce variable output voltage comprises that time-delay subelement and voltage switch subelement, realize separately with above-mentioned circuit shown in Figure 1 in time-delay subelement and the voltage similar function of switching subelement.In example 3, as shown in Figure 3, the function of time-delay subelement mainly realizes by the delay circuit of being made up of resistance, electric capacity and transistor.Particularly, the time-delay subelement mainly comprises: resistance R 6, R8, R15, R19, R20, Zener diode Z2, transistor Q2, Q5, capacitor C 5.The function of voltage switching subelement is mainly passed through by resistance, electric capacity, transistor, and the circuit that Zener diode and silicon controlled rectifier are formed is realized.Particularly, voltage switching subelement mainly comprises: resistance R 1, R2, R3, R4, R5, R7, R9, R10, R12, R13, R17, capacitor C 3, C4, transistor Q1, Q3, diode D1, D2, silicon controlled rectifier SCR1, SCR2, Zener diode Z1, Z2.
Example 4
Fig. 4 is the circuit diagram that makes the 4th example that loads on the device 100 of working in three kinds of different conditions according to an embodiment of the invention.The difference of the circuit of Fig. 4 and the circuit of Fig. 3 is: the circuit among Fig. 4 does not comprise resistance R 12, R13 and transistor Q3.Concrete annexation is shown in Figure 4, is not described in detail at this.
In this example, make the switch on wall (not shown) at interval according to preset time, for example several seconds, to close then and open, resonant load can be worked in three kinds of different conditions.The frequency of supposing driver element 120-4 in first state (being IC in example 4) output drive signal is f D1, the resonant load power output is P D1, the voltage of the VDIM pin of IC is V D1, the frequency of IC output drive signal is f in second state D2, the resonant load power output is P D2, the voltage of the VDIM pin of IC is V A2, the frequency of IC output drive signal is f in the third state D3, the resonant load power output is P A3, the voltage of the VDIM pin of IC is V A3, then their pass is: V D1＜V D3＜V D2, f D1＞f D3＞f D2, P D1＜P D3＜P D2
In Fig. 4, after switch on wall was being opened for the first time, operation principle was identical with Fig. 1.The voltage of the VDIM pin of hypothesis driven unit IC is V D1, then the frequency of IC output drive signal becomes f accordingly D1, power output is P D1
When switch on wall is closed, then at preset time after open the second time at interval, before silicon controlled rectifier SCR1 was triggered, operation principle was identical with Fig. 1, and after silicon controlled rectifier SCR1 and SCR2 were switched on, the voltage of supposing the VDIM pin was V D2,, can obtain relation: V by circuit parameter suitably is set D2＞V D1, f D2＜f D1, P D2＞P D1
Close when making switch on wall, after in the preset time interval, opening for the third time then, before silicon controlled rectifier SCR2 is triggered, operation principle is identical with Fig. 1, and silicon controlled rectifier is after SCR2 is switched on, because silicon controlled rectifier SCR1 is not triggered, the voltage of supposing the VDIM pin is V A3,, can obtain relation: V by circuit parameter suitably is set A1＜V A3＜V A2, f D1＞f D3＞f D2, P D1＜P D3＜P D2
From above-mentioned operation principle to circuit shown in Figure 4 as can be known, in making the example 4 that loads on the device 100 of working under more than one states according to an embodiment of the invention, the variable voltage generation unit 110-4 that is used to produce variable output voltage comprises that time-delay subelement and voltage switch subelement, realize separately with above-mentioned circuit shown in Figure 1 in time-delay subelement and the voltage similar function of switching subelement.In example 4, as shown in Figure 4, the function of time-delay subelement mainly realizes by the delay circuit of being made up of resistance, electric capacity and transistor.Particularly, the time-delay subelement mainly comprises: resistance R 6, R8, R15, R19, R20, Zener diode Z2, transistor Q2, Q5, capacitor C 5.The function of voltage switching subelement is mainly passed through by resistance, electric capacity, transistor, and the circuit that Zener diode and silicon controlled rectifier are formed is realized.Particularly, voltage switching subelement mainly comprises: resistance R 1, R2, R3, R4, R5, R7, R9, R10, R17, capacitor C 3, C4, transistor Q1, diode D1, D2, silicon controlled rectifier SCR1, SCR2, Zener diode Z1, Z2.
Example 5
Fig. 5 is the circuit diagram that makes the 5th example that loads on the device 100 of working in three kinds of different conditions according to an embodiment of the invention.The difference of the circuit of Fig. 5 and the circuit of Fig. 1 is: take resistance R 13, R14, R16 and transistor Q4 away, and annexation is changed as follows: the collector electrode of resistance R 2, R7 and transistor Q3 connects the VDIM pin, resistance R 12 is connected between the base stage of the anode of Zener diode Z2 and transistor Q3, and resistance R 11 is connected between the collector electrode and VDIM pin of transistor Q3.Concrete annexation is shown in Figure 5, is not described in detail at this.
In this example, make the switch on wall (not shown) at interval according to preset time, for example several seconds, to close then and open, resonant load can be worked in three kinds of different conditions.The frequency of supposing driver element 120-5 in first state (being IC in example 5) output drive signal is f E1, the resonant load power output is P E1, the voltage of the VDIM pin of IC is V E1, the frequency of IC output drive signal is f in second state E2, the resonant load power output is P E2, the voltage of the VDIM pin of IC is V E2, the frequency of IC output drive signal is f in the third state E3, the resonant load power output is P E3, the voltage of the VDIM pin of IC is V E3, then their pass is: V E2＜V E1＜V E3, f E2＞f E1＞f E3, P E2＜P E1＜P E3
In Fig. 5, after switch on wall was being opened for the first time, operation principle was identical with Fig. 1.The voltage of supposing the VDIM pin is V E1, then the frequency of IC output drive signal becomes f accordingly E1, power output is P E1
When switch on wall is closed, after in the preset time interval, opening for the second time then, before silicon controlled rectifier SCR1 is triggered, operation principle is identical with Fig. 1, and after silicon controlled rectifier SCR1 was switched on, it is saturated that transistor Q3 is driven to, and the voltage of supposing the VDIM pin is V E2, can make V by suitable value being set for resistance R 11 E2＞V E1, then obtain relation: V E2＜V E1, f E2＞f E1, P E2＞P E1
Close when making switch on wall, after in the preset time interval, opening for the third time then, before silicon controlled rectifier SCR2 is triggered, operation principle is identical with Fig. 1, and after silicon controlled rectifier SCR2 is switched on, because silicon controlled rectifier SCR1 is not triggered, transistor Q3 turn-offs, and the voltage of supposing the VDIM pin is V E3, can make V by circuit parameter suitably is set E2＜V E1＜V E3, then obtain relation: V E2＜V E1＜V E3, f E2＞f E1＞f E3, P E2＜P E1＜P E3
From above-mentioned operation principle to circuit shown in Figure 5 as can be known, in making the example 5 that loads on the device 100 of working under more than one states according to an embodiment of the invention, the variable voltage generation unit 110-5 that is used to produce variable output voltage comprises that time-delay subelement and voltage switch subelement, realize separately with above-mentioned circuit shown in Figure 1 in time-delay subelement and the voltage similar function of switching subelement.In example 5, as shown in Figure 5, the function of time-delay subelement mainly realizes by the delay circuit of being made up of resistance, electric capacity and transistor.Particularly, the time-delay subelement mainly comprises: resistance R 6, R8, R15, R19, R20, Zener diode Z2, transistor Q2, Q5, capacitor C 5.The function of voltage switching subelement is mainly passed through by resistance, electric capacity, transistor, and the circuit that Zener diode and silicon controlled rectifier are formed is realized.Particularly, voltage switching subelement mainly comprises: resistance R 1, R2, R3, R4, R5, R7, R9, R10, R11, R12, R17, capacitor C 3, C4, transistor Q1, Q3, diode D1, D2, silicon controlled rectifier SCR1, SCR2, Zener diode Z1, Z2.
Example 6
Fig. 6 is the circuit diagram that makes the 6th example that loads on the device 100 of working in three kinds of different conditions according to an embodiment of the invention.The difference of the circuit of Fig. 6 and the circuit of Fig. 1 is: take resistance R 10 away, and annexation is changed as follows: resistance R 2 and R7 connect the VDIM pin.Concrete annexation is shown in Figure 6, is not described in detail at this.
In this example, make the switch on wall (not shown) at interval according to preset time, for example several seconds, to close then and open, resonant load can be worked in three kinds of different conditions.Suppose in first state and to drive but the frequency of unit 120-6 (being IC in example 6) output drive signal is f F1, the resonant load power output is P F1, the voltage of the VDIM pin of IC is V F1, the frequency of IC output drive signal is f in second state F2, the resonant load power output is P F2, the voltage of the VDIM pin of IC is V F2, the frequency of IC output drive signal is f in the third state F3, the resonant load power output is P F3, the voltage of the VDIM pin of IC is V F3, then their pass is: V F3＜V F1＜V F2, f F3＞f F1＞f F2, P F3＜P F1＜P F2
In Fig. 6, after switch on wall was being opened for the first time, operation principle was identical with Fig. 1.The voltage of supposing the VDIM pin is V F1, then the frequency of IC output drive signal becomes f accordingly F1, power output is P F1
When switch on wall is closed, after in the preset time interval, opening for the second time then, before silicon controlled rectifier SCR1 is triggered, operation principle is identical with Fig. 1, and after silicon controlled rectifier SCR1 and SCR2 were switched on, it is saturated that transistor Q3 is driven to, and transistor Q4 turn-offs.The voltage of supposing the VDIM pin is V F2, then obtain relation: V F2＞V F1, f F2＜f F1, P F2＞P F1
Close when making switch on wall, after in the preset time interval, opening for the third time then, before silicon controlled rectifier SCR2 is triggered, operation principle is identical with Fig. 1, and after silicon controlled rectifier SCR2 is switched on, because silicon controlled rectifier SCR1 is not triggered, transistor Q3 turn-offs, and transistor Q4 is driven to saturated.The voltage of supposing the VDIM pin is V F3, can make V by suitable value being set for resistance R 16 F3＜V F1＜V F2, then obtain relation: V F3＜V F1＜V F2, f F3＞f F1＞f F2, P F3＜P F1＜P F2
From above-mentioned operation principle to circuit shown in Figure 6 as can be known, in making the example 6 that loads on the device 100 of working under more than one states according to an embodiment of the invention, the variable voltage generation unit 110-6 that is used to produce variable output voltage comprises that time-delay subelement and voltage switch subelement, realize separately with above-mentioned circuit shown in Figure 1 in time-delay subelement and the voltage similar function of switching subelement.In example 6, as shown in Figure 6, the function of time-delay subelement mainly realizes by the delay circuit of being made up of resistance, electric capacity and transistor.Particularly, the time-delay subelement mainly comprises: resistance R 6, R8, R15, R19, R20, Zener diode Z2, transistor Q2, Q5, capacitor C 5.The function of voltage switching subelement is mainly passed through by resistance, electric capacity, transistor, and the circuit that Zener diode and silicon controlled rectifier are formed is realized.Particularly, voltage switching subelement mainly comprises: resistance R 1, R2, R3, R4, R5, R7, R9, R11, R12, R13, R14, R16, R17, capacitor C 3, C4, transistor Q1, Q3, Q4, diode D1, D2, silicon controlled rectifier SCR1, SCR2, Zener diode Z1, Z2.
Though in above-mentioned each example all be the configuration make load for example desk lamp with dimmer switch under three kinds of different conditions, work, but those skilled in the art understand, by suitable circuit design, be easy to realize making desk lamp with dimmer switch, work in for example two kinds, four kinds or the more kinds of state at more than one.For example, if make load under two kinds of states, to work, then need to be provided with a predetermined time interval.Under the situation that loads on first kind of state work, off switch is opened switch then once more in described preset time interval, then can make load switch to work under second kind of state.Similarly, if make load under four kinds of states, to work, then need to be provided with three predetermined time intervals, these time intervals correspond respectively to load on carries out each time state when switching, switch under the current state of load from closing and then opening the time of being experienced.It is identical or different that each predetermined time interval can be set to, and this is easy to by the designer to realize by suitably selecting circuit parameter according to actual conditions.In above-mentioned each example, preset time can be set at interval that most of users can both accept and the scope of easy operating switch on wall, and for example 3 seconds, 5 seconds, or the like.
According to above-mentioned each example, load for example desk lamp with dimmer switch prepare to carry out operating state when switching, switch on wall is closed, during this period, because power supply is disconnected, so desk lamp with dimmer switch do not throw light on, and promptly is in dark state.Open switch on wall once more in the predetermined time interval after switch on wall is closed then, then desk lamp with dimmer switch enters another kind of state work, and the brightness of illumination changes, thereby realizes light modulation.If surpassing preset time behind off switch, the user opens switch at interval once more, perhaps just do not open switch at interval once more through preset time, possible desk lamp with dimmer switch is worked in regular turn not according to three kinds of operating states having set, but can not cause damage to desk lamp with dimmer switch or other circuit.For example, open switch once more at interval through preset time at interval or not, can make desk lamp with dimmer switch still close preceding operating state work and not make change according to switch when surpassing preset time.But, if behind the off switch one period long scheduled time, for example open switch once more after 30 seconds, then desk lamp with dimmer switch will be worked under the initial condition in each designed state.This is equivalent to the desk lamp with dimmer switch operation that " resets ".In addition, if sequentially close and open switch on wall according to each set predetermined time interval, desk lamp with dimmer switch will be according to operating state (the being corresponding brightness of illumination) periodic duty of design.Those skilled in the art can realize above-mentioned functions by means of physical circuit design under the instruction of content disclosed in this invention, do not repeat them here.
Therefore, be used for operating the method that loads on the device 100 that more than one states work also should be contemplated as falling with in protection scope of the present invention.Embodiment according to this method of operation of the present invention, be in described load under the situation of current state, turn-off and connect the power supply of the device of described service load at interval according to described at least one preset time, with based on described at least one preset time at interval in the corresponding time interval produce described variable output voltage, thereby make described loading on more than one states corresponding under work with described variable output voltage.
In addition, can couple in common non-desk lamp with dimmer switch that above-mentioned making loads on the device 100 of working in more than one states according to the present invention, make it become desk lamp with dimmer switch.Therefore, this desk lamp with dimmer switch is also in protection scope of the present invention.Those skilled in the art are easy to expect various devices in accordance with embodiments of the present invention 100 is couple to mode in the non-desk lamp with dimmer switch, do not repeat them here.
In addition, though what driver element 120 was taked in above-mentioned each example is the form of integrated circuit (IC), but, those skilled in the art's easy to understand, this driver element also can be made up of discrete electronic component, can change its output drive signal as long as make driver element have by its input direct voltage.In like manner, though variable voltage switch unit 110 is to be made of discrete circuit element in the various embodiments described above,, it equally also can form with various integrate circuit function modules.
Though describe the present invention in conjunction with each embodiment and object lesson above, yet, it will be appreciated that the present invention is not intended to be limited to disclosed concrete form, but can have various modifications and variations.For example, for the quantity at least one above-mentioned time interval and the various amount of state and the correlation thereof of specifically numerical value, described load, and the particular circuit configurations of variable voltage generation unit 110, those skilled in the art are easy to make various modification, variation and replacement form by for example suitable circuit design according to the enlightenment and the instruction of above-mentioned disclosed particular circuit configurations of the present invention and configuration.Therefore, these modifications, variation, replacement and equivalent thereof all should be contemplated as falling with in the spirit and scope of the present invention.

Claims (17)

1, a kind of device (100) that is used for service load comprising:
Variable voltage generation unit (110), it is configured to produce variable output voltage according to the described power supply that is used for the device (100) of service load according to shutoff and the connection at interval of at least one preset time, and described at least one preset time is that described power supply is connected the time of being experienced from turn-offing to each time under described load work at present state at interval; With
Driver element (120), it is configured to change the output drive signal that it is used for service load in response to the variable output voltage that described variable voltage generation unit produces, so that described loading under more than one states corresponding with described variable output voltage worked.
2, the device that is used for service load as claimed in claim 1, wherein, described variable voltage generation unit comprises
The time-delay subelement, its be configured to generate with described power supply according to described at least one preset time at interval shutoff and connect time-delay state corresponding, the variable voltage generation unit; With
Voltage switches subelement, and it is configured to switch the variable output voltage that is produced by described variable voltage generation unit according to the time-delay state that described time-delay subelement is produced.
3, the device that is used for service load as claimed in claim 2, wherein,
Described variable voltage generation unit is configured to produce first output voltage V 1, second output voltage V 2With the 3rd output voltage V 3, and described driver element is configured to make described loading on respectively and described first output voltage V 1, second output voltage V 2With the 3rd output voltage V 3The first corresponding power output P 1, the second power output P 2With the 3rd power output P 3Following work, wherein, satisfy following relation:
V 1＞V 2＞V 3，P 1＞P 2＞P 3。
4, the device that is used for service load as claimed in claim 3, wherein
Described time-delay subelement comprises: the DC power supply that described power supply obtains behind over commutation (VDC), first resistance (R19) and second resistance (R20) constitute the startup network of described driver element (120-1), this startup network is connected between the power input (VCC) of described DC power supply (VDC) and driver element (120-1), the collector electrode of the first transistor (Q5) is connected to the intermediate contact of first resistance (R19) and second resistance (R20), the grounded emitter of the first transistor (Q5), the 3rd resistance (R15) is connected between the collector electrode of the base stage of the first transistor (Q5) and transistor seconds (Q2), the 4th resistance (R8) is connected between the collector electrode of DC power supply (VDC) and transistor seconds (Q2), first electric capacity (C5) is connected between the collector electrode and ground of transistor seconds (Q2), the grounded emitter of transistor seconds (Q2), the 5th resistance (R6) are connected between the anode of the base stage of transistor seconds (Q2) and first Zener diode (Z2); And
Described voltage switches subelement and comprises: the negative electrode of first Zener diode (Z2) is connected in the contact between the negative electrode of the 6th resistance (R2) and first silicon controlled rectifier (SCR1), the other end ground connection of the 6th resistance (R2), the 7th resistance (R1) is connected between the anode and DC power supply (VDC) of first silicon controlled rectifier (SCR1), the 8th resistance (R17) is connected between the base stage of the power input (VCC) of driver element (120-1) and the 3rd transistor (Q1), the intermediate contact of the 9th resistance (R3) and the tenth resistance (R4) is connected to the collector electrode of the 3rd transistor (Q1), the other end ground connection of the 9th resistance (R3), another termination DC power supply (VDC) of the tenth resistance (R4), the grounded emitter of the 3rd transistor (Q1), the negative electrode of second Zener diode (Z1) is connected in the intermediate contact of the 9th resistance (R3) and the tenth resistance (R4), the anode of second Zener diode (Z1) connects the anode of first diode (D1), the negative electrode of first diode (D1) connects the grid of first silicon controlled rectifier (SCR1), second electric capacity (C3) is connected between the grid and ground of first silicon controlled rectifier (SCR1), the anode of second diode (D2) connects the anode of first Zener diode (Z2), the 3rd electric capacity (C4) is connected between the negative electrode and ground of second diode (D2), the 11 resistance (R5) is connected between the grid of the negative electrode of second diode (D2) and second silicon controlled rectifier (SCR2), the anode of second silicon controlled rectifier (SCR2) connects the anode of first silicon controlled rectifier (SCR1), the 12 resistance (R7) is connected between the negative electrode and ground of second silicon controlled rectifier (SCR2), the series circuit of the 13 resistance (R9) and the 14 resistance (R10) is connected between the anode and ground of first silicon controlled rectifier (SCR1), the intermediate contact of the 13 resistance (R9) and the 14 resistance (R10) is connected to the variable voltage input (VDIM) of driver element (120-1), the 15 resistance (R11) is connected between the anode of the base stage of the 4th transistor (Q3) and second Zener diode (Z2), the grounded emitter of the 4th transistor (Q3), the collector electrode of the 4th transistor (Q3) is connected in the intermediate contact of the series circuit of the 16 resistance (R13) and the 17 resistance (R14), this series circuit is connected between DC power supply (VDC) and the ground, the 18 resistance (R12) is connected between the base stage of the collector electrode of the 4th transistor (Q3) and the 5th transistor (Q4), the 19 resistance (R16) is connected between the collector electrode of the negative electrode of second silicon controlled rectifier (SCR2) and the 5th transistor (Q4), the grounded emitter of the 5th transistor (Q4).
5, the device that is used for service load as claimed in claim 2, wherein,
Described variable voltage generation unit is configured to produce first output voltage V 1, second output voltage V 2With the 3rd output voltage V 3, and described driver element is configured to make described loading on respectively and described first output voltage V 1, second output voltage V 2With the 3rd output voltage V 3The first corresponding power output P 1, the second power output P 2With the 3rd power output P 3Following work, wherein, satisfy following relation:
V 1＞V 3＞V 2，P 1＞P 3＞P 2。
6, the device that is used for service load as claimed in claim 5, wherein
Described time-delay subelement comprises: the DC power supply that described power supply obtains behind over commutation (VDC), first resistance (R19) and second resistance (R20) constitute the startup network of described driver element (120-2), this startup network is connected between the power input (VCC) of DC power supply (VDC) and driver element (120-2), the collector electrode of the first transistor (Q5) is connected to the intermediate contact of first resistance (R19) and second resistance (R20), the grounded emitter of the first transistor (Q5), the 3rd resistance (R15) is connected between the collector electrode of the base stage of the first transistor (Q5) and transistor seconds (Q2), the 4th resistance (R8) is connected between the collector electrode of DC power supply (VDC) and transistor seconds (Q2), first electric capacity (C5) is connected between the collector electrode and ground of transistor seconds (Q2), the grounded emitter of transistor seconds (Q2), the 5th resistance (R6) are connected between the anode of the base stage of transistor seconds (Q2) and first Zener diode (Z2); And
Described voltage switches subelement and comprises: the negative electrode of first Zener diode (Z2) is connected in the contact between the negative electrode of the 6th resistance (R2) and first silicon controlled rectifier (SCR1), the other end ground connection of the 6th resistance (R2), the 7th resistance (R1) is connected between the anode and DC power supply (VDC) of first silicon controlled rectifier (SCR1), the 8th resistance (R17) is connected between the base stage of the power input (VCC) of driver element (120-2) and the 3rd transistor (Q1), the intermediate contact of the 9th resistance (R3) and the tenth resistance (R4) is connected to the collector electrode of the 3rd transistor (Q1), the other end ground connection of the 9th resistance (R3), another termination DC power supply (VDC) of the tenth resistance (R4), the grounded emitter of the 3rd transistor (Q1), the negative electrode of second Zener diode (Z1) is connected in the intermediate contact of the 9th resistance (R3) and the tenth resistance (R4), the anode of second Zener diode (Z1) connects the anode of first diode (D1), the negative electrode of first diode (D1) connects the grid of first silicon controlled rectifier (SCR1), second electric capacity (C3) is connected between the grid and ground of first silicon controlled rectifier (SCR1), the anode of second diode (D2) connects the anode of first Zener diode (Z2), the 3rd electric capacity (C4) is connected between the negative electrode and ground of second diode (D2), the 11 resistance (R5) is connected between the grid of the negative electrode of second diode (D2) and second silicon controlled rectifier (SCR2), the anode of second silicon controlled rectifier (SCR2) connects the anode of first silicon controlled rectifier (SCR1), the 12 resistance (R7) is connected between the negative electrode and ground of second silicon controlled rectifier (SCR2), the series circuit of the 13 resistance (R9) and the 14 resistance (R10) is connected between the anode and ground of first silicon controlled rectifier (SCR1), and the intermediate contact of the 13 resistance (R9) and the 14 resistance (R10) is connected to the variable voltage input (VDIM) of driver element (120-2).
7, the device that is used for service load as claimed in claim 2, wherein,
Described variable voltage generation unit is configured to produce first output voltage V 1, second output voltage V 2With the 3rd output voltage V 3, and described driver element is configured to make described loading on respectively and described first output voltage V 1, second output voltage V 2With the 3rd output voltage V 3The first corresponding power output P 1, the second power output P 2With the 3rd power output P 3Following work, wherein, satisfy following relation:
V 3＞V 2＞V 1，P 3＞P 2＞P 1。
8, the device that is used for service load as claimed in claim 7, wherein
Described time-delay subelement comprises: the DC power supply that described power supply obtains behind over commutation (VDC), first resistance (R19) and second resistance (R20) constitute the startup network of described driver element (120-3), this startup network is connected between the power input (VCC) of DC power supply (VDC) and driver element (120-3), the collector electrode of the first transistor (Q5) is connected to the intermediate contact of first resistance (R19) and second resistance (R20), the grounded emitter of the first transistor (Q5), the 3rd resistance (R15) is connected between the collector electrode of the base stage of the first transistor (Q5) and transistor seconds (Q2), the 4th resistance (R8) is connected between the collector electrode of DC power supply (VDC) and transistor seconds (Q2), first electric capacity (C5) is connected between the collector electrode and ground of transistor seconds (Q2), the grounded emitter of transistor seconds (Q2), the 5th resistance (R6) are connected between the anode of the base stage of transistor seconds (Q2) and first Zener diode (Z2); And
Described voltage switches subelement and comprises: the negative electrode of first Zener diode (Z2) is connected in the contact between the negative electrode of the 6th resistance (R2) and first silicon controlled rectifier (SCR1), the other end of the 6th resistance (R2) is received the variable voltage input (VDIM) of driver element (120-3), the 7th resistance (R1) is connected between the anode and DC power supply (VDC) of first silicon controlled rectifier (SCR1), the 8th resistance (R17) is connected between the base stage of the power input (VCC) of driver element (120-3) and the 3rd transistor (Q1), the intermediate contact of the 9th resistance (R3) and the tenth resistance (R4) is connected to the collector electrode of the 3rd transistor (Q1), the other end ground connection of the 9th resistance (R3), another termination DC power supply (VDC) of the tenth resistance (R4), the grounded emitter of the 3rd transistor (Q1), the negative electrode of second Zener diode (Z1) is connected in the intermediate contact of the 9th resistance (R3) and the tenth resistance (R4), the anode of second Zener diode (Z1) connects the anode of first diode (D1), the negative electrode of first diode (D1) connects the grid of first silicon controlled rectifier (SCR1), second electric capacity (C3) is connected between the grid and ground of first silicon controlled rectifier (SCR1), the anode of second diode (D2) connects the anode of first Zener diode (Z2), the 3rd electric capacity (C4) is connected between the negative electrode and ground of second diode (D2), the 11 resistance (R5) is connected between the grid of the negative electrode of second diode (D2) and second silicon controlled rectifier (SCR2), the anode of second silicon controlled rectifier (SCR2) connects the anode of first silicon controlled rectifier (SCR1), the 12 resistance (R7) is connected between the variable voltage input (VDIM) of the negative electrode of second silicon controlled rectifier (SCR2) and driver element (120-3), the series circuit of the 13 resistance (R9) and the 14 resistance (R10) is connected between the anode and ground of first silicon controlled rectifier (SCR1), the intermediate contact of the 13 resistance (R9) and the 14 resistance (R10) is connected to the variable voltage input (VDIM) of driver element (120-3), the collector electrode of the 4th transistor (Q3) is connected in the variable voltage input (VDIM) of driver element (120-3), the 15 resistance (R13) is connected between the emitter and ground of the 4th transistor (Q3), and the 16 resistance (R12) is connected between the anode of the base stage of the 4th transistor (Q3) and first Zener diode (Z2).
9, the device that is used for service load as claimed in claim 2, wherein,
Described variable voltage generation unit is configured to produce first output voltage V 1, second output voltage V 2With the 3rd output voltage V 3, and described driver element is configured to make described loading on respectively and described first output voltage V 1, second output voltage V 2With the 3rd output voltage V 3The first corresponding power output P 1, the second power output P 2With the 3rd power output P 3Following work, wherein, satisfy following relation:
V 2＞V 3＞V 1，P 2＞P 3＞P 1。
10, the device that is used for service load as claimed in claim 9, wherein
Described time-delay subelement comprises: the DC power supply that described power supply obtains behind over commutation (VDC), first resistance (R19) and second resistance (R20) constitute the startup network of described driver element (120-4), this startup network is connected between the power input (VCC) of DC power supply (VDC) and driver element (120-4), the collector electrode of the first transistor (Q5) is connected to the intermediate contact of first resistance (R19) and second resistance (R20), the grounded emitter of the first transistor (Q5), the 3rd resistance (R15) is connected between the collector electrode of the base stage of the first transistor (Q5) and transistor seconds (Q2), the 4th resistance (R8) is connected between the collector electrode of DC power supply (VDC) and transistor seconds (Q2), first electric capacity (C5) is connected between the collector electrode and ground of transistor seconds (Q2), the grounded emitter of transistor seconds (Q2), the 5th resistance (R6) are connected between the anode of the base stage of transistor seconds (Q2) and first Zener diode (Z2); And
Described voltage switches subelement and comprises: the negative electrode of first Zener diode (Z2) is connected in the contact between the negative electrode of the 6th resistance (R2) and first silicon controlled rectifier (SCR1), the other end of the 6th resistance (R2) is received the variable voltage input (VDIM) of driver element (120-4), the 7th resistance (R1) is connected between the anode and DC power supply (VDC) of first silicon controlled rectifier (SCR1), the 8th resistance (R17) is connected between the base stage of the power input (VCC) of driver element (120-4) and the 3rd transistor (Q1), the intermediate contact of the 9th resistance (R3) and the tenth resistance (R4) is connected to the collector electrode of the 3rd transistor (Q1), the other end ground connection of the 9th resistance (R3), another termination DC power supply (VDC) of the tenth resistance (R4), the grounded emitter of the 3rd transistor (Q1), the negative electrode of second Zener diode (Z1) is connected in the intermediate contact of the 9th resistance (R3) and the tenth resistance (R4), the anode of second Zener diode (Z1) connects the anode of first diode (D1), the negative electrode of first diode (D1) connects the grid of first silicon controlled rectifier (SCR1), second electric capacity (C3) is connected between the grid and ground of first silicon controlled rectifier (SCR1), the anode of second diode (D2) connects the anode of first Zener diode (Z2), the 3rd electric capacity (C4) is connected between the negative electrode and ground of second diode (D2), the 11 resistance (R5) is connected between the grid of the negative electrode of second diode (D2) and second silicon controlled rectifier (SCR2), the anode of second silicon controlled rectifier (SCR2) connects the anode of first silicon controlled rectifier (SCR1), the 12 resistance (R7) is connected between the variable voltage input (VDIM) of the negative electrode of second silicon controlled rectifier (SCR2) and driver element (120-4), the series circuit of the 13 resistance (R9) and the 14 resistance (R10) is connected between the anode and ground of first silicon controlled rectifier (SCR1), and the intermediate contact of the 13 resistance (R9) and the 14 resistance (R10) is connected to the variable voltage input (VDIM) of driver element (120-4).
11, the device that is used for service load as claimed in claim 2, wherein,
Described variable voltage generation unit is configured to produce first output voltage V 1, second output voltage V 2With the 3rd output voltage V 3, and described driver element is configured to make described loading on respectively and described first output voltage V 1, second output voltage V 2With the 3rd output voltage V 3The first corresponding power output P 1, the second power output P 2With the 3rd power output P 3Following work, wherein, satisfy following relation:
V 3＞V 1＞V 2，P 3＞P 1＞P 2。
12, the device that is used for service load as claimed in claim 11, wherein
Described time-delay subelement comprises: the DC power supply that described power supply obtains behind over commutation (VDC), first resistance (R19) and second resistance (R20) constitute the startup network of described driver element (120-5), this startup network is connected between the power input (VCC) of DC power supply (VDC) and driver element (120-5), the collector electrode of the first transistor (Q5) is connected to the intermediate contact of first resistance (R19) and second resistance (R20), the grounded emitter of the first transistor (Q5), the 3rd resistance (R15) is connected between the collector electrode of the base stage of the first transistor (Q5) and transistor seconds (Q2), the 4th resistance (R8) is connected between the collector electrode of DC power supply (VDC) and transistor seconds (Q2), first electric capacity (C5) is connected between the collector electrode and ground of transistor seconds (Q2), the grounded emitter of transistor seconds (Q2), the 5th resistance (R6) are connected between the anode of the base stage of transistor seconds (Q2) and first Zener diode (Z2); And
Described voltage switches subelement and comprises: the negative electrode of first Zener diode (Z2) is connected in the contact between the negative electrode of the 6th resistance (R2) and first silicon controlled rectifier (SCR1), the other end of the 6th resistance (R2) is connected in the variable voltage input (VDIM) of driver element (120-5), the 7th resistance (R1) is connected between the anode and DC power supply (VDC) of first silicon controlled rectifier (SCR1), the 8th resistance (R17) is connected between the base stage of the power input (VCC) of driver element (120-5) and the 3rd transistor (Q1), the intermediate contact of the 9th resistance (R3) and the tenth resistance (R4) is connected to the collector electrode of the 3rd transistor (Q1), the other end ground connection of the 9th resistance (R3), another termination DC power supply (VDC) of the tenth resistance (R4), the grounded emitter of the 3rd transistor (Q1), the negative electrode of second Zener diode (Z1) is connected in the intermediate contact of the 9th resistance (R3) and the tenth resistance (R4), the anode of second Zener diode (Z1) connects the anode of first diode (D1), the negative electrode of first diode (D1) connects the grid of first silicon controlled rectifier (SCR1), second electric capacity (C3) is connected between the grid and ground of first silicon controlled rectifier (SCR1), the anode of second diode (D2) connects the anode of first Zener diode (Z2), the 3rd electric capacity (C4) is connected between the negative electrode and ground of second diode (D2), the 11 resistance (R5) is connected between the grid of the negative electrode of second diode (D2) and second silicon controlled rectifier (SCR2), the anode of second silicon controlled rectifier (SCR2) connects the anode of first silicon controlled rectifier (SCR1), the 12 resistance (R7) is connected between the variable voltage input (VDIM) of the negative electrode of second silicon controlled rectifier (SCR2) and driver element (120-5), the series circuit of the 13 resistance (R9) and the 14 resistance (R10) is connected between the anode and ground of first silicon controlled rectifier (SCR1), the intermediate contact of the 13 resistance (R9) and the 14 resistance (R10) is connected to the variable voltage input (VDIM) of driver element (120-5), the 15 resistance (R11) is connected between the variable Input voltage terminal (VDIM) of the collector electrode of the 4th transistor (Q3) and driver element (120-5), the grounded emitter of the 4th transistor (Q3), the collector electrode of the 4th transistor (Q3) is connected in the variable Input voltage terminal (VDIM) of driver element (120-5) by the 15 resistance (R11), and the 16 resistance (R12) is connected between the anode of the base stage of the 4th transistor (Q3) and second Zener diode (Z2).
13, the device that is used for service load as claimed in claim 2, wherein
Described variable voltage generation unit is configured to produce first output voltage V 1, second output voltage V 2With the 3rd output voltage V 3, and described driver element is configured to make described loading on respectively and described first output voltage V 1, second output voltage V 2With the 3rd output voltage V 3The first corresponding power output P 1, the second power output P 2With the 3rd power output P 3Following work, wherein, satisfy following relation:
V 2＞V 1＞V 3，P 2＞P 1＞P 3。
14, the device that is used for service load as claimed in claim 13, wherein
Described time-delay subelement comprises: the DC power supply that described power supply obtains behind over commutation (VDC), first resistance (R19) and second resistance (R20) constitute the startup network of described driver element (120-6), this startup network is connected between the power input (VCC) of DC power supply (VDC) and driver element (120-6), the collector electrode of the first transistor (Q5) is connected to the intermediate contact of first resistance (R19) and second resistance (R20), the grounded emitter of the first transistor (Q5), the 3rd resistance (R15) is connected between the collector electrode of the base stage of the first transistor (Q5) and transistor seconds (Q2), the 4th resistance (R8) is connected between the collector electrode of DC power supply (VDC) and transistor seconds (Q2), first electric capacity (C5) is connected between the collector electrode and ground of transistor seconds (Q2), the grounded emitter of transistor seconds (Q2), the 5th resistance (R6) are connected between the anode of the base stage of transistor seconds (Q2) and first Zener diode (Z2); And
Described voltage switches subelement and comprises: the negative electrode of first Zener diode (Z2) is connected in the contact between the negative electrode of the 6th resistance (R2) and first silicon controlled rectifier (SCR1), the other end of the 6th resistance (R2) is connected in the variable voltage input (VDIM) of driver element (120-6), the 7th resistance (R1) is connected between the anode and DC power supply (VDC) of first silicon controlled rectifier (SCR1), the 8th resistance (R17) is connected between the base stage of the power input (VCC) of driver element (120-6) and the 3rd transistor (Q1), the intermediate contact of the 9th resistance (R3) and the tenth resistance (R4) is connected to the collector electrode of the 3rd transistor (Q1), the other end ground connection of the 9th resistance (R3), another termination DC power supply (VDC) of the tenth resistance (R4), the grounded emitter of the 3rd transistor (Q1), the negative electrode of second Zener diode (Z1) is connected in the intermediate contact of the 9th resistance (R3) and the tenth resistance (R4), the anode of second Zener diode (Z1) connects the anode of first diode (D1), the negative electrode of first diode (D1) connects the grid of first silicon controlled rectifier (SCR1), second electric capacity (C3) is connected between the grid and ground of first silicon controlled rectifier (SCR1), the anode of second diode (D2) connects the anode of first Zener diode (Z2), the 3rd electric capacity (C4) is connected between the negative electrode and ground of second diode (D2), the 11 resistance (R5) is connected between the grid of the negative electrode of second diode (D2) and second silicon controlled rectifier (SCR2), the anode of second silicon controlled rectifier (SCR2) connects the anode of first silicon controlled rectifier (SCR1), the 12 resistance (R7) is connected between the variable voltage input (VDIM) of the negative electrode of second silicon controlled rectifier (SCR2) and driver element (120-6), the 13 resistance (R9) is connected between the variable voltage input (VDIM) of the anode of first silicon controlled rectifier (SCR1) and driver element (120-6), the 14 resistance (R11) is connected between the anode of the base stage of the 4th transistor (Q3) and second Zener diode (Z2), the grounded emitter of the 4th transistor (Q3), the collector electrode of the 4th transistor (Q3) is connected in the intermediate contact of the series circuit of the 15 resistance (R13) and the 16 resistance (R14), this series circuit is connected between DC power supply (VDC) and the ground, the 17 resistance (R12) is connected between the base stage of the collector electrode of the 4th transistor (Q3) and the 5th transistor (Q4), the 18 resistance (R16) is connected between the collector electrode of the negative electrode of second silicon controlled rectifier (SCR2) and the 5th transistor (Q4), the grounded emitter of the 5th transistor (Q4).
15, a kind of being used for comes method of operating is carried out in load by the device as each described service load of claim 1-14, comprising:
Be in described load under the situation of current state, turn-off and connect the power supply of the device of described service load at interval according to described at least one preset time, with based on described at least one preset time at interval in the corresponding time interval produce described variable output voltage, thereby make described loading on more than one states corresponding under work with described variable output voltage.
16, a kind of comprising as any one described load equipment that is used for the device of service load among the claim 1-14.
17, load equipment as claimed in claim 16, wherein, described load equipment is a desk lamp with dimmer switch.
CNA2008101252254A 2008-06-16 2008-06-16 The apparatus and method that are used for service load Pending CN101610631A (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013041331A1 (en) 2011-09-23 2013-03-28 Osram Gmbh A steps dimming control circuit and a method
CN107094326A (en) * 2016-02-18 2017-08-25 海洋王（东莞）照明科技有限公司 LED lamp controls circuit
CN110505738A (en) * 2019-08-06 2019-11-26 江苏富联通讯技术有限公司 A kind of intelligence control system adjusting lamp brightness according to period of switching time
CN112823122A (en) * 2018-10-09 2021-05-18 赛峰集团 Onboard power supply network for an electrically propelled aircraft

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013041331A1 (en) 2011-09-23 2013-03-28 Osram Gmbh A steps dimming control circuit and a method
CN107094326A (en) * 2016-02-18 2017-08-25 海洋王（东莞）照明科技有限公司 LED lamp controls circuit
CN112823122A (en) * 2018-10-09 2021-05-18 赛峰集团 Onboard power supply network for an electrically propelled aircraft
CN112823122B (en) * 2018-10-09 2022-06-07 赛峰集团 Onboard power supply network for an electrically propelled aircraft
CN110505738A (en) * 2019-08-06 2019-11-26 江苏富联通讯技术有限公司 A kind of intelligence control system adjusting lamp brightness according to period of switching time

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