CN101582413B - Power module with lower stray inductance - Google Patents
Power module with lower stray inductance Download PDFInfo
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- CN101582413B CN101582413B CN 200910097413 CN200910097413A CN101582413B CN 101582413 B CN101582413 B CN 101582413B CN 200910097413 CN200910097413 CN 200910097413 CN 200910097413 A CN200910097413 A CN 200910097413A CN 101582413 B CN101582413 B CN 101582413B
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- 239000000758 substrate Substances 0.000 claims abstract description 13
- 230000004888 barrier function Effects 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- 238000009413 insulation Methods 0.000 claims description 6
- 229920001721 polyimide Polymers 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 239000000741 silica gel Substances 0.000 claims description 2
- 229910002027 silica gel Inorganic materials 0.000 claims description 2
- 238000003466 welding Methods 0.000 claims description 2
- 229910000831 Steel Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000010959 steel Substances 0.000 description 3
- 230000001052 transient effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Power Conversion In General (AREA)
- Inverter Devices (AREA)
Abstract
The invention discloses a power module with lower stray inductance. The power module comprises a chip, an insulating substrate, a radiating rib and power terminals, wherein the insulating substrate is positioned on the radiating rib; the chip is welded on the insulating substrate; at least two power terminals are arranged in the module and are connected to the positive electrode and the negative electrode of a direct current bus respectively; and the two power terminals connected to the direct current bus are of a stacked bus structure. The power module has the characteristics of small stray inductance, small voltage stress endured when the module is turned off.
Description
Technical field
The invention belongs to power electronics field, relate to a kind of power model, specifically a kind of power model that low stray inductance is arranged.
Background technology
Power model comprises insulated gate bipolar transistor (IGBT) module, diode (led) module, MOSFET module, intelligent power (IPM) module etc.Owing to the problem of power terminal structural design, causing in inside modules has higher stray inductance, bears bigger voltage stress when making module shuts down in existing these power models.
Existing is that example is explained because of higher stray inductance exists with insulated gate bipolar transistor (IGBT) module, is how to bear bigger voltage stress when causing turn-offing.Insulated gate bipolar transistor (IGBT) module is a kind of novel electric power electric device, has the input characteristics of MOSFET and the output characteristic of BJT concurrently, and it bears bigger voltage stress when turn-offing existing with Fig. 6 explanation.As shown in Figure 6; In the circuit that the inside of IGBT module is formed with insulated substrate (DBC), bonding aluminum steel and power terminal, exist stray inductance and resistance, this stray inductance comprises and the stray inductance L1 of positive electrode bus junction inside modules, the stray inductance L2 with negative pole bus junction inside modules, the endophyte inductance L 3 of module output., IGBT module on stray inductance, can produce a transient voltage V when turn-offing
L, this voltage is superimposed upon on the bus voltage, and virtual voltage is V between the C-E of IGBT like this
DD+ V
L, transient voltage V
LBe proportional to the size and the change in current rate di of stray inductance
CE/ dt, along with the operating frequency of device is increasingly high, moment di
CE/ dt is increasing.
And existing IGBT module is withstand voltage mainly by insulated gate bipolar transistor chip decision, but that chip has only is certain withstand voltage.So requiring V
DD+ V
LUnder the condition less than device withstand voltage, a feasible improvement approach is the total stray inductance in as far as possible reducing module.
Summary of the invention
The objective of the invention is to design a kind of power model that low stray inductance is arranged.
What the present invention will solve is the excessive problem of stray inductance that existing power model exists
Technology implementation scheme of the present invention is: comprise chip, insulated substrate, heating panel and power terminal; Insulated substrate is positioned on the heating panel; Chips welding is to insulated substrate; At least be provided with in the module on the positive pole and negative pole that two power terminals are attached to dc bus respectively, and these two power terminals that are attached on the dc bus adopt range upon range of bus structure.
The range upon range of bus structure of module internal power terminal comprises two power terminals and is close to the insulating barrier between the power terminal, and the spacing between two power terminals is under the condition that satisfies insulation, and is approaching as far as possible.
The advantage that the present invention compares existing power model is: stray inductance voltage stress little, that bear when turn-offing is little.
Description of drawings
Fig. 1 is the structural representation of IGBT module of the present invention.
Fig. 2 is the structural representation of IGBT inside modules of the present invention
Fig. 3 is the equivalent circuit diagram of power terminal stray inductance.
Fig. 4 is an IGBT module of the present invention and the sketch map that is connected of range upon range of bus.
Fig. 5 is the structure chart of range upon range of bus.
Fig. 6 is the circuit theory diagrams that stray inductance causes voltage overshoot.
Embodiment:
Combine accompanying drawing and embodiment that the present invention is described further at present.
The power model of present embodiment is insulated gate bipolar transistor (IGBT) module.To shown in Figure 5, this power model comprises insulated gate bipolar transistor chip 2, diode chip for backlight unit 8, insulated substrate (DBC) 12, heating panel 10, bonding aluminum steel 9, power terminal 4 and power terminal 5, support 13, signal terminal 1 and shell 7 like Fig. 1.Insulated substrate 12 is positioned on the heating panel 10, and insulated gate bipolar transistor chip 2 is reflow soldered on the insulated substrate 12 with diode chip for backlight unit 8.
Be provided with power terminal 4 and power terminal 5 in the power model 15, they are attached to respectively on the negative pole (N) 6 of positive pole (P) 3 and bus of bus, and these two power terminals 4 that are attached on the bus adopt range upon range of bus structures with power terminals 5.
The power terminal 4 and the range upon range of bus structure of power terminal 5 that are attached on the bus comprise power terminal 4, power terminal 5 and insulating barrier 11, and insulating barrier 11 and is close on power terminal 4 and the power terminal 5 between power terminal 4 and power terminal 5.Spacing is under the condition that satisfies insulation between power terminal 4 and the power terminal 5, and is approaching as far as possible.Insulating barrier between power terminal 4 and the power terminal 5 is with silica gel or H type polyimide film (KaptonHN).As with H type polyimide film, when insulation module required to 1200V, the thickness of H type polyimide film needs only 25 μ m can be satisfied.
The power terminal 4 of above-mentioned range upon range of bus structure and power terminal 5, owing to link to each other with negative pole (N) 6 with positive pole (P) 3 of bus respectively, so their sense of current of flowing through is just opposite, just cancel each other in the magnetic field that they produced.The module 15 outside dc buss that connect 14 of the present invention adopt dc bus row structure.This bus row structure comprises that positive plate 16, negative plate 18 and insulation board 17 form, and positive plate 16 and negative plate 18 are processed by copper coin, middlely separates with insulation board 17, and the three fixes with the insulating blanked clamper pad, forms a whole.Bus row's last lower conducting plate, promptly positive plate 16, the shape of negative plate 18, area are close.When shape, the area of last lower conducting plate are close, and when flowing through reciprocal electric current, will cancel each other in the magnetic field that the two produced, and the inductance of this bus pole plate is zero in theory.So the influence that bus 14 inductance turn-off the IGBT module voltage overshoot to transient state is minimum.
In same IGBT module 15, be at least one group in inside modules with insulated gate bipolar transistor chip 2 and the group number that diode chip for backlight unit 8 constitutes.The group number that constitutes at inner insulated gate bipolar transistor chip 2 of same IGBT module 15 and diode chip for backlight unit 8 is during greater than 1 group; Realize being electrically connected the outside of guiding to module through the power terminal 4 and the power terminal 5 of range upon range of bus structure again between each core assembly sheet through bonding aluminum steel 9 bondings.
The principle that the present invention can reduce total stray inductance in the module is:
Among the present invention between the C-E of insulated gate bipolar transistor total stray inductance can be expressed as:
L
eq＝Lt+Lb+Lp+2Mtb
Lt is the self-induction of the power terminal that links to each other with the bus negative pole
Lb is the self-induction with the anodal power terminal that links to each other of bus
Mtb is the mutual inductance of two power terminals
Li is the inductance of other part of inside modules
The current opposite in direction that in power terminal 4 and power terminal 5, flows through; Then mutual inductance is a negative value; So total stray inductance will be less than two conductor self-induction sums, and when the distance of power terminal 4 and power terminal 5 is reduced to minimum the time, total stray inductance can be reduced to minimum.
Power model of the present invention also comprises diode (led) module except above-mentioned insulated gate bipolar transistor (IGBT) module, MOSFET module, modules such as intelligent power (IPM) module.
Claims (5)
1. the power model of a low stray inductance; Comprise chip, insulated substrate, heating panel and power terminal; Insulated substrate is positioned on the heating panel; Chips welding is characterized in that being provided with at least in the power model two power terminals and is attached to respectively on the positive pole and negative pole of dc bus to insulated substrate, and these two power terminals that are attached on the dc bus adopt range upon range of bus structure;
The range upon range of bus structure of module internal power terminal comprises two power terminals and is close to the insulating barrier between the power terminal, and the spacing between two power terminals is under the condition that satisfies insulation, and is approaching as far as possible.
2. the power model of low stray inductance according to claim 1 is characterized in that the insulating barrier between the power terminal adopts silica gel or H type polyimide film.
3. the power model of low stray inductance according to claim 1; When it is characterized in that group number at same power model inside chip is greater than 1 group; Realize being electrically connected through bonding between each core assembly sheet, guide to the outside of module again through the power terminal of range upon range of bus structure.
4. the power model of low stray inductance according to claim 1 is characterized in that described chip comprises bipolar transistor chip, diode chip for backlight unit.
5. the power model of low stray inductance according to claim 4 is characterized in that the group number that is made up of bipolar transistor chip and diode chip for backlight unit in this module is at least one group.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910097413 CN101582413B (en) | 2009-04-02 | 2009-04-02 | Power module with lower stray inductance |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910097413 CN101582413B (en) | 2009-04-02 | 2009-04-02 | Power module with lower stray inductance |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101582413A CN101582413A (en) | 2009-11-18 |
| CN101582413B true CN101582413B (en) | 2012-05-30 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200910097413 Active CN101582413B (en) | 2009-04-02 | 2009-04-02 | Power module with lower stray inductance |
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Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102097417B (en) * | 2010-11-04 | 2012-11-07 | 嘉兴斯达微电子有限公司 | Integrated power semiconductor power module |
| CN102495294B (en) * | 2011-11-30 | 2014-11-26 | 台达电子企业管理（上海）有限公司 | System and method for testing parasitic inductance |
| CN102569276B (en) * | 2012-02-14 | 2014-11-19 | 株洲南车时代电气股份有限公司 | Insulated gate bipolar transistor (IGBT) module |
| CN107248508B (en) * | 2015-01-19 | 2019-12-27 | 株洲中车时代电气股份有限公司 | Power terminal group and power electronic module |
| CN107393913A (en) * | 2017-08-30 | 2017-11-24 | 扬州国扬电子有限公司 | A kind of power modules with parallel coaxial installation electrode combination |
| CN109599376B (en) * | 2017-09-30 | 2023-01-31 | 西门子公司 | Insulated gate bipolar transistor IGBT terminal |
| CN108418063B (en) * | 2018-05-18 | 2023-10-17 | 臻驱科技（上海）有限公司 | Power semiconductor module power terminal |
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- 2009-04-02 CN CN 200910097413 patent/CN101582413B/en active Active
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| CN101582413A (en) | 2009-11-18 |
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Effective date of registration: 20180104 Address after: Jiaxing City, Zhejiang province 314006 Nanhu District Branch Road No. 988 Patentee after: STARPOWER SEMICONDUCTOR Ltd. Address before: Sidalu in Nanhu District of Jiaxing city of Zhejiang Province, No. 18 314000 Patentee before: JIAXING STARPOWER MICROELECTRONICS Co.,Ltd. |
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| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: No.988, Kexing Road, Nanhu District, Jiaxing City, Zhejiang Province Patentee after: Star Semiconductor Co.,Ltd. Address before: No.988, Kexing Road, Nanhu District, Jiaxing City, Zhejiang Province Patentee before: STARPOWER SEMICONDUCTOR Ltd. |