CN101577300A - 发光二极管及其封装方法 - Google Patents

发光二极管及其封装方法 Download PDF

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CN101577300A
CN101577300A CNA2008100972775A CN200810097277A CN101577300A CN 101577300 A CN101577300 A CN 101577300A CN A2008100972775 A CNA2008100972775 A CN A2008100972775A CN 200810097277 A CN200810097277 A CN 200810097277A CN 101577300 A CN101577300 A CN 101577300A
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张家诚
陈逸勋
廖启维
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Zhanjing Technology Shenzhen Co Ltd
Advanced Optoelectronic Technology Inc
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ADVANCED DEVELOPMENT PHOTOELECTRIC Co Ltd
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Abstract

本发明公开一种发光二极管及其封装方法，该发光二极管包含一封装板材体、一挡墙、一发光二极管芯片，及荧光填充物。该封装板材体具有一固晶区域，该挡墙是一设于该固晶区域的透明挡墙，与该封装板材体一体成型或粘着于该封装板材体上。该发光二极管芯片设置于该挡墙限定的区域内，该荧光填充物填充于该挡墙限定的区域而涂布于该发光二极管芯片周围。本发明的发光二极管及其封装方法，可有效提高发光二极管的出光均匀性和发光效率，减少发光损耗。

Description

发光二极管及其封装方法
技术领域
本发明涉及一种发光二极管及其封装方法，尤其涉及改进荧光粉涂敷技术以提高出光均匀性的发光二极管及其封装方法。
背景技术
现有的白色发光二极管通常是由一发光二极管芯片涂敷一定的荧光粉或荧光胶经封装而成。
如图1所示，美国专利第US6879490号揭示一种发光二极管8，其包含一封装板材体80及一发光二极管芯片81。该封装板材体80内开设一凹槽82，该发光二极管芯片81即设于该凹槽82内。该凹槽82的侧壁820设计为倾斜延伸，以反射发光二极管芯片81发出的光。然后以荧光胶体83填充该凹槽82，通过其倾斜侧壁820反射而提高出光均匀性与出光效果。
然而该发光二极管的改善仅是较现有技术中的凹槽侧壁为垂直的情况而言，实际上，其凹槽侧壁对二极管芯片发出的光仍有遮挡。因此该发光二极管仍存在相当大的发光损耗和出光不均匀性，尚需进一步改进。
发明内容
本发明提供一种发光二极管及其封装方法，其可以经济的方式提高出光效果和均匀性。
为达到上述目的，本发明提供下述技术方案：一种发光二极管，包含一封装板材体、一挡墙、一发光二极管芯片，及荧光填充物。该封装板材体具有一固晶区域，该挡墙是一设于该固晶区域的透明挡墙。该发光二极管芯片设置于该挡墙限定的区域内，该荧光填充物填充于该挡墙限定的区域而涂布于该发光二极管芯片周围。
本发明还提供一种发光二极管的封装方法，包含下列步骤：一固晶工艺，将一发光二极管芯片固定于一封装板材体；一透明挡墙设置工艺，在该封装板材体上设置包围该发光二极管芯片的透明挡墙；及一荧光填充物填充工艺，向该挡墙限定的区域内填充荧光填充物。
在一实施例中，该透明挡墙设置工艺可先于固晶工艺进行，如在该封装板材体的生产过程中设置。
根据本发明的发光二极管及其封装方法，其挡墙与该封装板材体一体成型或粘着于该封装板材体上。该挡墙限定的区域呈圆形、正方形或长方形。该挡墙是与该发光二极管的外封装体折射系数相同或相近的硅胶或透明树脂。该荧光填充物是荧光粉或荧光胶。该封装板材体是平板或呈凹形。
本发明的有益技术效果在于，在本发明的发光二极管及其封装方法中，其封装后的二极管较现有技术所包覆的荧光填充物厚度一致，芯片发出的光穿透荧光填充物的路径距离相同，因而可获得极佳的出光均匀性。另一方面，因为使用透明挡墙让光线穿越而非反射光，不影响二极管芯片的发光效率，且不会遮蔽其发出的光，大幅度降低光损耗。
附图说明
图1是一现有发光二极管的剖视图；
图2是根据本发明一实施例的发光二极管的立体示意图；
图3是沿图2中A-A线截取的剖视图。
其中，附图标记说明如下：
1、8发光二极管           2、80封装板材体
82凹槽                   820侧壁
83荧光胶体               20固晶区域
3挡墙                    4、81发光二极管芯片
5荧光填充物              6基板
7外罩
具体实施方式
为更好的理解本发明的精神，以下结合本发明的优选实施例对其作进一步说明。
根据本发明的发光二极管及其封装方法，是在发光二极管封装过程中，以一体成型或粘着方式在封装板材体的固晶区域上设置透明挡墙。该透明挡墙可使用硅胶、透明树脂，或其它可让光穿透的材料，且该挡墙的光折射系数与发光二极管的外封装体的保护胶材相同或相近。荧光胶/粉填充时，依该挡墙限制的区域涂布，可均匀形成于发光二极管芯片四周，达到出光均匀的目的。
具体的，如图2、3所示，根据本发明一实施例的发光二极管1，包含一封装板材体2、透明挡墙3、一发光二极管芯片4、荧光填充物5、一基板6，及一外罩7。该封装板材体2设置于该基板6上，其上设有一固定该发光二极管芯片4的固晶区域20。透明挡墙3设于该固晶区域20上，而发光二极管芯片4设置于该挡墙3限定的区域内。透明挡墙3可以与封装板材体2一体成型或采用粘着方式设置于封装板材体2上，其形状可为圆形、正方形、长方形等略大于发光二极管芯片4的围框，以围设于该芯片4的四周。荧光填充物5可使用荧光胶或荧光粉，依挡墙3所限制的区域填充，从而均匀涂布于该发光二极管芯片4的四周。
进一步的，根据本发明一实施例的发光二极管1的封装方法是在发光二极管1的封装工艺中，先进行发光二极管芯片4的固晶工艺将其固定于封装板材体2的固晶区域20，然后将透明档墙3以一体成型或粘着方式设置于芯片4的***；接着进行打线，使用金线将发光二极管芯片4连接至基板6上；然后向挡墙3限制的区域内填注荧光粉或荧光胶等荧光填充物5。
当然上述封装方法的步骤也可作部分调整，如，根据本发明另一实施例的发光二极管的封装方法，其是在固晶工艺前，如封装板材生产过程中，先以一体成型或黏着方式将透明档墙设置于封装板材上；再进行固晶、焊线作业；然后向挡墙限制区域内填注荧光粉或荧光胶等荧光填充物。
根据本发明的发光二极管及其封装方法，其所使用的封装板材可以是各种材料的封装版材，并无特定限制；其透明挡墙材料可以是硅、树脂等透明胶体，而且可设置于任何平板、凹型封装板材上，不影响其性能。
本发明的发光二极管及其封装方法较现有技术，封装后发光二极管所包覆的荧光填充物厚度一致，发光二极管芯片发出的光穿透荧光填充物的路径距离相同，因而可获得极佳的出光均匀性。另一方面，因为使用与外封装体的封装胶材相同或相近的折射系数的透明树脂或硅胶形成透明挡墙，让光线穿越挡墙而非靠挡墙反射光，不影响二极管芯片的发光效率，且不会遮蔽其发出的光，大幅度降低光损耗。而且从外观上看并不会看到所设置的档墙，提高产品的外观美感。
本发明的技术内容及技术特点已揭示如上，然而熟悉本领域的技术人员仍可能基于本发明的教示及揭示而作种种不背离本发明精神的替换及修饰。因此，本发明的保护范围应不限于实施例所揭示的内容，而应包括各种不背离本发明的替换及修饰，并涵盖在权利要求书的范围内。

Claims (14)

1.一种发光二极管，包含一封装板材体、一挡墙、一发光二极管芯片，及荧光填充物；该封装板材体具有一固晶区域，该挡墙设于该固晶区域；其特征在于，该挡墙是一透明挡墙，该发光二极管芯片设置于该挡墙限定的区域内；该荧光填充物填充于该挡墙限定的区域而涂布于该发光二极管芯片周围。
2.如权利要求1所述的发光二极管，其特征在于，该挡墙与该封装板材体一体成型或粘着于该封装板材体上。
3.如权利要求1所述的发光二极管，其特征在于，该挡墙限定的区域呈圆形、正方形或长方形。
4.如权利要求1所述的发光二极管，其特征在于，该挡墙是与该发光二极管的外封装体折射系数相同或相近的硅胶或透明树脂。
5.如权利要求1所述的发光二极管，其特征在于，该荧光填充物是荧光粉或荧光胶。
6.如权利要求1所述的发光二极管，其特征在于，该封装板材体是平板或呈凹形。
7.一种发光二极管的封装方法，包含下列步骤：
固晶工艺，将一发光二极管芯片固定于一封装板材体；
透明挡墙设置工艺，在该封装板材体上设置包围该发光二极管芯片的透明挡墙；及
荧光填充物填充工艺，向该挡墙限定的区域内填充荧光填充物。
8.如权利要求7所述的发光二极管的封装方法，其特征在于，该透明挡墙设置工艺可先于该固晶工艺进行。
9.如权利要求8所述的发光二极管的封装方法，其特征在于，该透明挡墙设置工艺是在该封装板材体的生产过程中设置。
10.如权利要求7、8或9所述的发光二极管的封装方法，其特征在于，该挡墙与该封装板材体一体成型或粘着于该封装板材体上。
11.如权利要求7、8或9所述的发光二极管的封装方法，其特征在于，该挡墙限定的区域呈圆形、正方形或长方形。
12.如权利要求7、8或9所述的发光二极管的封装方法，其特征在于，该挡墙是与该发光二极管的外封装体折射系数相同或相近的硅胶或透明树脂。
13.如权利要求7、8或9所述的发光二极管的封装方法，其特征在于，该荧光填充物是荧光粉或荧光胶。
14.如权利要求7、8或9之一所述的发光二极管的封装方法，其特征在于，该封装板材体是平板或呈凹形。
CNA2008100972775A 2008-05-08 2008-05-08 发光二极管及其封装方法 Pending CN101577300A (zh)

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US12/435,937 US20090278152A1 (en) 2008-05-08 2009-05-05 Light emitting diode and package method thereof

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CN102544319A (zh) * 2012-01-05 2012-07-04 深圳雷曼光电科技股份有限公司 Led支架、led及led封装工艺
CN109638137A (zh) * 2018-11-07 2019-04-16 惠州市华星光电技术有限公司 倒装led芯片及直下式背光模组

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CN102544319A (zh) * 2012-01-05 2012-07-04 深圳雷曼光电科技股份有限公司 Led支架、led及led封装工艺
CN109638137A (zh) * 2018-11-07 2019-04-16 惠州市华星光电技术有限公司 倒装led芯片及直下式背光模组

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