CN101577270A - Semi-conductor luminescence component - Google Patents
Semi-conductor luminescence component Download PDFInfo
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- CN101577270A CN101577270A CN 200810301430 CN200810301430A CN101577270A CN 101577270 A CN101577270 A CN 101577270A CN 200810301430 CN200810301430 CN 200810301430 CN 200810301430 A CN200810301430 A CN 200810301430A CN 101577270 A CN101577270 A CN 101577270A
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- substrate
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- led crystal
- crystal particle
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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Abstract
The invention provides a semi-conductor luminescence component, which comprises a substrate, a plurality of LED crystal grains arranged on the substrate, and a plurality of metal cushion layers, wherein the substrate is provided with a first surface and a second surface opposite to the first surface; the first surface of the substrate is provided with a plurality of grooves sinking to the second surface, and the plurality of the grooves divide the first surface of the substrate into a plurality of discontinuous regions; and each of the plurality of the discontinuous regions is provided with two metal cushion layers which are separated from each other and one LED crystal grain which is electrically connected with the two metal cushion layers. The semi-conductor luminescence component can effectively inhibit the transmission of the thermal disturbance among the LED crystal grains, and has better radiating efficiency.
Description
Technical field
The present invention relates to a kind of semiconductor luminous assembly, especially a kind of semiconductor light-emitting-diode assembly with better cooling efficiency.
Background technology
Light-emitting diode (the LED that adopts semiconductor luminous assembly to make, Light Emitting Diode) with its brightness height, operating voltage is low, power consumption is little, easily with the integrated circuit coupling, drive advantages such as simple, life-span length, thereby can be used as light source and be widely used in lighting field, can be referring to Thermal Considerations for LED Components in an Automotive Lamp one literary composition of people in 23rd IEEE SEMI-THERM Symposium such as Joseph Bielecki.
Under specific lighting environment, be to improve the brightness of miniaturization LED lighting device, often need be on small substrate integrated a plurality of high-power LED.Yet, consider that LED needs higher radiating efficiency, common substrate adopts the silicon substrate with high heat conduction efficiency to carry described a plurality of high-power LED, the lattice constant (LatticeConstant) of considering silicon substrate simultaneously and growth have LED crystal grain substrate (as, sapphire) difference, usually (Under Bump Metallurgy UBM) realizes being adhesively fixed with silicon substrate high-power LED by being arranged on metal bed course on the silicon substrate.This kind is provided with down, though silicon substrate can conduct and distribute the heat that high-capacity LED is produced when luminous, but because intensive being arranged on the silicon substrate of described a plurality of high-power LED, can produce significantly heat interference between the LED of therefore mutual close together transmits, thereby have a strong impact on the radiating efficiency of high-capacity LED, and then influence its service behaviour.
In view of this, provide a kind of and have the semiconductor luminous assembly of better cooling efficiency in fact for necessary.
Summary of the invention
Below will a kind of semiconductor luminous assembly with better cooling efficiency be described with specific embodiment.
A kind of semiconductor luminous assembly, it comprises substrate and is arranged on a plurality of LED crystal particle and a plurality of metal bed course on the substrate, this substrate has a first surface and one and this first surface opposing second surface, the first surface of this substrate is provided with a plurality of grooves to this second surface depression, and these a plurality of grooves are divided into a plurality of discontinuous zones with the first surface of substrate; Each zone in described a plurality of discontinuity zone is provided with two metal bed courses that are separated from each other and one and these two LED crystal particle that the metal bed course is electrically connected.
Compared with prior art, a plurality of LED crystal particle of described semiconductor luminous assembly are fixedly installed on a plurality of discontinuity zones of substrate via the metal bed course respectively, groove between a plurality of discontinuity zones should a plurality of LED crystal particle be kept apart respectively, thereby the heat that can effectively suppress between the LED crystal particle is disturbed transmission, thereby has preferable radiating efficiency.
Description of drawings
Fig. 1 is the integrally-built fractionation schematic diagram of the semiconductor luminous assembly that provides of the embodiment of the invention.
Fig. 2 is the board structure schematic diagram of the semiconductor luminous assembly that provides of the embodiment of the invention.
Fig. 3 is the board structure schematic diagram that is provided with the metal bed course that the embodiment of the invention provides.
Fig. 4 is the board structure schematic diagram that is provided with metal bed course and LED crystal particle that the embodiment of the invention provides.
Embodiment
Below with reference to accompanying drawing the embodiment of the invention is described in further detail.
Referring to Fig. 1, a kind of semiconductor luminous assembly 10 that the embodiment of the invention provides, it comprises: a substrate 11, a plurality of metal bed courses 12 and a plurality of LED crystal particle 13.
This substrate 11 is used for carrying should be referring to Fig. 2, and this substrate 11 has a first surface 110, one second surfaces 112 and a plurality of side 114.This first surface 110 is oppositely arranged with second surface 112.This side 114 joins with this first surface 110 and second surface 112 respectively, and is non-90 degree angle settings with first surface 110 and second surface 112 respectively.The first surface 110 of this substrate 11 is provided with a plurality of grooves 116 to these second surface 112 depressions, and these a plurality of grooves 116 are divided into a plurality of discontinuous regional 118 with the first surface 110 of substrate.These a plurality of grooves 116 can be v-depression, flat bottomed recess or the combination of the two etc.This substrate 11 can be made by the preferable material of heat conductivity, as silicon.When described groove was v-depression, this v-depression can be made by anisotropic etching; When described groove was flat bottomed recess, this flat bottomed recess can be made by the inductive couple plasma etching.Certainly, described groove 116 also can be the groove of other shapes such as U-shaped groove.In the present embodiment, this substrate 11 is a silicon substrate, and this groove 116 is a flat bottomed recess.
These a plurality of metal bed courses 12 are used for providing electrical connection to LED crystal particle 14, to obtain extraneous electric energy.Referring to Fig. 3, each zone 118 is provided with two metal bed courses 12 that are separated from each other.Preferably, two metal bed courses 12 that are separated from each other on this each zone 118 extend to the side 114 and the second surface 112 of substrate 11 respectively, thereby respectively be arranged on second surface 112 on two metal electrodes 120 be electrically connected, this metal electrode 120 can be used as surface mount (Surface MountingTechnology, SMT) electrode contact feet, thus make this kind setting can make semiconductor luminous assembly 10 be more convenient for assembling.
Referring to Fig. 4, these a plurality of LED crystal particle 13 are a plurality of discontinuous regional 118 corresponding one by one with this, and each LED crystal particle 13 is bonded on the metal bed course 12 in each zone 118 by silica gel or elargol respectively, and the LED crystal particle 13 on each zone 118 all realizes being electrically connected by routing with two the metal bed courses that are separated from each other 12 on this zone 118, and is luminous to obtain electric energy by metal electrode 120 from the external world.
A plurality of LED crystal particle 13 of described semiconductor luminous assembly 10 respectively via metal bed course 12 be fixedly installed on substrate 11 a plurality of discontinuous regional 118 on, groove 116 between a plurality of discontinuous regional 118 should a plurality of LED crystal particle 13 be kept apart respectively, thereby the heat that can effectively suppress between the LED crystal particle 13 is disturbed transmission, thereby has preferable radiating efficiency.
Preferably, this semiconductor luminous assembly 10 also comprises and LED crystal particle 13, and a plurality of discontinuous regional 118 packaging bodies 14 of a plurality of printing opacities one to one, as shown in Figure 1.This packaging body 14 coats the LED crystal particle 13 that is arranged on these a plurality of discontinuity zones 118.The material of this packaging body 14 can be resin etc., it is cylindrical and its axial direction is vertical with this first surface 110, the end face 140 away from first surface 110 of this cylindrical encapsulation body 14 comprise one with LED crystal particle 13 over against bright dipping zone 142, this bright dipping zone 142 is recessed to form curved surface along the directions near LED crystal particle 13.Thereby, from LED crystal particle 13 and be incident to the light of cylindrical encapsulation body 14 circumference sides and will be very easily in this circumference side total reflection take place and be reflected back toward in the packaging body 14, then from 142 outgoing of bright dipping zone, thereby improve the light direction of semiconductor luminous assembly 10.
Need to prove that this side 114 is not limited to be non-90 degree angle settings with first surface 110 and second surface 112, this side 114 also can be provided with perpendicular to first surface 110 or second surface 112.
In addition, those skilled in the art also can do other variation in spirit of the present invention, material as suitable change substrate 11, the shape of change groove 116, the change profile of packaging body 14 and the shape in bright dipping zone 142 thereof etc. are to be used for design such as the present invention, as long as it does not depart from technique effect of the present invention and all can.The variation that these are done according to spirit of the present invention all should be included within the present invention's scope required for protection.
Claims (8)
1. semiconductor luminous assembly, it comprises substrate and is arranged on a plurality of LED crystal particle and a plurality of metal bed course on the substrate, it is characterized in that: this substrate has a first surface and one and this first surface opposing second surface, the first surface of this substrate is provided with a plurality of grooves to this second surface depression, and these a plurality of grooves are divided into a plurality of discontinuous zones with the first surface of substrate; Be provided with two metal bed courses that are separated from each other and one and these two LED crystal particle that the metal bed course is electrically connected on each zone in described a plurality of discontinuity zone.
2. semiconductor luminous assembly as claimed in claim 1 is characterized in that, the LED crystal particle on this each zone is arranged on one in two the metal bed courses in this zone.
3. semiconductor luminous assembly as claimed in claim 1 is characterized in that, this substrate is a silicon substrate.
4. semiconductor luminous assembly as claimed in claim 1 is characterized in that, these a plurality of grooves are v-depression, U-shaped groove, flat bottomed recess or its combination.
5. semiconductor luminous assembly as claimed in claim 1 is characterized in that this substrate also comprises the side between first surface and second surface.
6. semiconductor luminous assembly as claimed in claim 5, it is characterized in that, the second surface of this substrate is provided with metal electrode, two metal bed courses on this each zone are arranged on the first surface of substrate and extend to the side and the second surface of this substrate, and are electrically connected with metal electrode on being arranged on this second surface.
7. semiconductor luminous assembly as claimed in claim 5 is characterized in that, this side is non-90 degree angle settings with described first surface and second surface.
8. semiconductor luminous assembly as claimed in claim 1, it is characterized in that, be respectively arranged with the packaging body of columniform a, printing opacity on each zone, the axial direction that this packaging body coats is arranged on LED crystal particle on this zone and this packaging body is vertical with this first surface, the end face away from first surface of this packaging body have one with LED crystal particle over against the bright dipping zone, this bright dipping zone is recessed to form curved surface along the direction near LED crystal particle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200810301430 CN101577270B (en) | 2008-05-06 | 2008-05-06 | Semi-conductor luminescence component |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200810301430 CN101577270B (en) | 2008-05-06 | 2008-05-06 | Semi-conductor luminescence component |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101577270A true CN101577270A (en) | 2009-11-11 |
| CN101577270B CN101577270B (en) | 2012-11-21 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200810301430 Expired - Fee Related CN101577270B (en) | 2008-05-06 | 2008-05-06 | Semi-conductor luminescence component |
Country Status (1)
| Country | Link |
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| CN (1) | CN101577270B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102221134A (en) * | 2010-04-14 | 2011-10-19 | 富准精密工业(深圳)有限公司 | Lighting device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW563263B (en) * | 2002-09-27 | 2003-11-21 | United Epitaxy Co Ltd | Surface mounting method for high power light emitting diode |
| CN101501870B (en) * | 2006-05-31 | 2012-10-31 | 株式会社藤仓 | Light-emitting device mounting substrate, light-emitting device module and display |
-
2008
- 2008-05-06 CN CN 200810301430 patent/CN101577270B/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102221134A (en) * | 2010-04-14 | 2011-10-19 | 富准精密工业(深圳)有限公司 | Lighting device |
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| Publication number | Publication date |
|---|---|
| CN101577270B (en) | 2012-11-21 |
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Granted publication date: 20121121 Termination date: 20150506 |
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