CN101572850A - Capacitance type microphone with stress release membrane prepared at a low temperature and preparation method thereof - Google Patents
Capacitance type microphone with stress release membrane prepared at a low temperature and preparation method thereof Download PDFInfo
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- CN101572850A CN101572850A CNA2009103014876A CN200910301487A CN101572850A CN 101572850 A CN101572850 A CN 101572850A CN A2009103014876 A CNA2009103014876 A CN A2009103014876A CN 200910301487 A CN200910301487 A CN 200910301487A CN 101572850 A CN101572850 A CN 101572850A
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Abstract
A capacitance type microphone with a stress release membrane prepared at a low temperature and a preparation method thereof. The capacitance type microphone includes a substrate having at least a resonant cavity; a septum, arranged on the top of the resonant cavity and connected with the substrate for implementing a mechanical vibration when being excitated by an acoustic pressure wave; a back board, arranged on the top of the septum and having a plurality of perforations; an air gap is provided the back board and the septum; a capacitor is composed of the septum, the air gap and the back board. The method includes steps: forming the resonant cavity on the substrate; forming the septum on the top of the resonant cavity, wherein the septum is connected with the substrate; setting the back board on the top of the septum, wherein the back board has a plurality of perforations; forming the air gap between the back board and the septum. The invention is a MEMS capacitance type microphone processed by a completely low-temperature technique. It is capable of being used as a post IC circuit processing technique being compatible thereof. The structure of the vibration diaphragm of the capacitance type microphone is a stress-releasing structure, and is capable of reducing a parasitic capacitance. Comparing with the traditional initial stress release membrane, the invention improves the sensitivity of the microphone more effectively.
Description
[technical field]
The present invention relates to a kind of Electret Condencer Microphone and preparation method thereof.Electret Condencer Microphone comprises a barrier film that has electrode, and it is arranged on the substrate with at least one resonant cavity, and barrier film is provided with a counterelectrode backboard.Between barrier film and backboard, has air gap; Electrode is connected on the backboard by a plurality of strain reliefs.The material of barrier film and backboard will be selected, to avoid adhesion occurring in processing and use.It between backboard and substrate holder the thicker dielectric layer of one deck.The manufacturing process of whole device is carried out being no more than under 300 ℃ the temperature.
[background technology]
The pressure sensitive film of typical Electret Condencer Microphone adopts the silicon nitride or the monocrystalline silicon thin film of low stress.Though little processes of these sense films is comparative maturity,, this traditional sense film exists following shortcoming: the formation technological temperature of (1) film is higher, is difficult to integrated with the chip of relevant signal processing.(2) it is relatively large that the residual stress of vibrating membrane has caused size of devices more greatly, is not easy to the integrated of system.
[summary of the invention]
The present invention relates to a kind of Electret Condencer Microphone and preparation method thereof.The making temperature of this device is lower, therefore, the microphone monolithic can be integrated on the substrate that contains prefabricated circuit for signal conditioning.
This Electret Condencer Microphone assembly comprises at least one supporting substrate, a pressure sensing barrier film and a backboard.Substrate is provided with one or more resonant cavitys, is used for being connected of acoustic pressure and barrier film.This barrier film comprises a conductive film electrode and film sealing together.The mechanical stress that exists in the membrane electrode is all discharged by the perforation that is positioned at rational position or part discharges.Above-mentioned perforation is covered by conduction or nonconducting sealing film.The sealing film makes barrier film that transducer is remained on the operation down of static pressure load.Backboard is isolated by air gap and barrier film, and this backboard is big by a conductive film and thickness, conduction or nonconducting enhanced film are formed.Be equipped with a plurality of air-vents on conductive film and the enhanced film, make the air of backboard both sides exchange.Capacitor of the common formation of barrier film, backboard and air gap.In case when electric bias current appears in capacitor, the mechanical oscillation of barrier film will be converted into the signal of telecommunication.
The present invention is a kind of MEMS Electret Condencer Microphone of complete low temperature process processing.This processing technology can be used as back IC circuit fabrication technology and its compatibility.The structure of the vibrating membrane of this Electret Condencer Microphone adopts the structure of Stress Release, has also reduced parasitic capacitance simultaneously.Compare with traditional primary stress release film, more effectively improved the sensitivity of microphone.
According to detailed description of the present invention, its extensive use is conspicuous.Yet detailed description and instantiation have only shown most preferred embodiment of the present invention.Obviously, various modifications and the change carried out within the scope of the present invention all belong to scope of the present invention.
[description of drawings]
Figure 1A is the section structure schematic diagram of Electret Condencer Microphone of the present invention, and Figure 1B is the circular resonant chamber schematic diagram on the substrate of the present invention, and Fig. 1 C is the truncated pyramid resonant cavity schematic diagram on the substrate of the present invention.
Fig. 2 is a conductive layer floor map of the present invention.
Fig. 3 A～3J is the making schematic flow sheet of the Electret Condencer Microphone of the first embodiment of the present invention, wherein, Fig. 3 A is the substrate sectional schematic diagram, Fig. 3 B is the sectional schematic diagram after interpolation dielectric layer and the embossing, Fig. 3 C is a sectional schematic diagram after interpolation conductive layer and the embossing, Fig. 3 D is a sectional schematic diagram after interpolation sealant and the embossing, Fig. 3 E is a sectional schematic diagram after interpolation sacrifice layer and the embossing, Fig. 3 F is a sectional schematic diagram behind the interpolation conductive laminate, Fig. 3 G is for adding electroplating mold and embossing (backboard that has air-vent in order to formation) back sectional schematic diagram, Fig. 3 H is that conductive backings is electroplated schematic diagram in the polymeric molds opening, Fig. 3 I is a sectional schematic diagram behind the resonant cavity opening of the back side, and Fig. 3 J is the finished section schematic diagram according to the Electret Condencer Microphone of embodiment 1 formation.
Fig. 4 A～4I is the making schematic flow sheet of the Electret Condencer Microphone of the second embodiment of the present invention, wherein, Fig. 4 A is the sectional schematic diagram behind the substrate double spread etching stopping layer, Fig. 4 B is the sectional schematic diagram after interpolation dielectric layer and the embossing, Fig. 4 C is a sectional schematic diagram after interpolation conductive layer and the embossing, Fig. 4 D is a sectional schematic diagram after interpolation sealant and the embossing, Fig. 4 E is a sectional schematic diagram after interpolation sacrifice layer and the embossing, Fig. 4 F is a sectional schematic diagram behind the interpolation conductive laminate, Fig. 4 G is the sectional schematic diagram after the mechanical enhancement layer of interpolation and back side resonant cavity opening and the embossing, Fig. 4 H removes unwanted crystal grain layer and bonding enhancement layer sectional schematic diagram afterwards, and Fig. 4 I is the finished section schematic diagram according to the Electret Condencer Microphone of embodiment 2 formation.
Fig. 5 A～5K is the making schematic flow sheet of the Electret Condencer Microphone of the third embodiment of the present invention, wherein, Fig. 5 A is the sectional schematic diagram that carries out in the substrate behind the resonant cavity opening of the back side, Fig. 5 B is the sectional schematic diagram behind the interpolation etch stop layer, Fig. 5 C is the sectional schematic diagram behind the interpolation adhesive layer on the substrate, Fig. 5 D is Fig. 5 B and sectional schematic diagram after structure shown in Fig. 5 C is connected, Fig. 5 E is the sectional schematic diagram behind the interpolation barrier film, Fig. 5 F is the sectional schematic diagram of taking apart and removing after 303 and 304, Fig. 5 G is the sectional schematic diagram after interpolation conductive layer and the embossing, Fig. 5 H is the sectional schematic diagram after interpolation sealant and the embossing, Fig. 5 I is the sectional schematic diagram after interpolation sacrifice layer and the embossing, Fig. 5 J is the sectional schematic diagram after conductive laminate 331 moulding, and Fig. 5 K is the finished section schematic diagram according to the Electret Condencer Microphone of embodiment 3 formation.
[embodiment]
Above-mentioned general remark and following detailed description for for example, are of the present invention further explanation and the explanations to claim only.
Figure 1A is the section structure schematic diagram of Electret Condencer Microphone of the present invention, and wherein, microphone is based on the substrate 101 that has resonant cavity 1011.Shown in Figure 1A, wherein, microphone is located on the substrate 101, and substrate 101 is provided with resonant cavity 1011.Substrate can be made by electric conducting material, insulating material or semiconductive material.The pressure sensing barrier film comprises conductive layer 111 and sealant 112.Barrier film is provided with the backboard of rigidity, and this backboard is made up of conductive layer 131 and rigid structural layer 132, and both are equipped with air-vent 1321.Form air gap 1211 between sealant 112 and the conductive layer 131.Air gap forms sensing capacitor together with conductor 111 and 131.Dielectric layer 103 preferably adopts relatively low dielectric constant, and it is used to reduce the capacitance between substrate 101 and the barrier film conductive layer 111, and reduces the electric capacity between substrate 101 and the substrate conductive layer 131.
Figure 1B is illustrated in the cylindrical cavity 1011 that forms by dry-etching on the substrate 101.Fig. 1 C shows the resonant cavity 1012 that is shaped as truncated pyramid, and this resonant cavity forms by directed Wet-type etching on substrate 101.
Fig. 2 is the floor map of conductive layer 111, and this conductive layer 111 comprises that a stress eradicates a mental barrier 1111.Barrier film described in the following embodiment all belongs to this type.
Fig. 3 A shows the generation type of the etch stop layer 102 of substrate 101 both sides.Etch stop layer must be selected, and makes when touching substrate 101 and barrier film conductive layer 111 etchants, can keep relatively low rate of etch.In the present embodiment, substrate 101 employing thickness are that 200～800 microns silicon materials are made, etch stop layer 102 is that the polycrystalline germanium layer of 50～400 nanometers is formed by thickness, and this polycrystalline germanium layer forms by the low temperature chemical vapor deposition process deposits being lower than under 300 ℃ the temperature.Other depositing operation is suitable equally, comprises sputter deposition craft, hydatogenesis technology and plasma excitation formula chemical vapor deposition method.
Fig. 3 B shows the generation type of embossing dielectric layer 103, and it preferably adopts and is lower than 3 relative dielectric constant.In the present embodiment, dielectric layer 103 is that thickness is 0.5～3 micron photopolymer layer, and this photopolymer layer at room temperature forms by spin coating.This polymer by solidifying, was back under 120～180 ℃ of temperature few 0.5 hour after configuration, formed inclination shape sidewall 1031, and the step that this inclination shape sidewall can strengthen the subsequent deposition film covers.
Fig. 3 C shows the generation type of conductive layer 111, and this conductive layer constitutes stress by embossing and eliminates perforation 1111 and electric contact mat 1112.In the present embodiment, this conductive layer is 50～400 nanometers by thickness, and at room temperature the titanium film of sputtering sedimentation is made.Then the polycrystalline germanium etch stop layer of substrate opposite side is passed through the mixture formation decorative pattern of water, hydrogen peroxide and hydrogen chloride, and form the required opening 1021 of rear portion resonant cavity etching.Polycrystalline germanium also can adopt other wet type or dry etch process etching.
Fig. 3 D shows the generation type of insulated enclosure layer 112.Then, sealant 112 is formed the contact hole 1121 that leads to contact mat 1112 by embossing.In the present embodiment, sealant 112 is that thickness is 0.5～3 micron, in the parylene film that is lower than under 100 ℃ the temperature by the chemical vapor deposition method deposition.Also available other organic or inorganic film replaces Parylene, and the technology of employing comprises hydatogenesis technology, sputter deposition craft and spin coating proceeding.
Fig. 3 E shows the generation type of embossing sacrifice layer 121.In the present embodiment, sacrifice layer 121 is that thickness is 0.5～5 micron, at room temperature the photosensitive polymer film that deposits by spin coating proceeding.This polymer by solidifying, was back under 120～180 ℃ of temperature few 0.5 hour after configuration, formed sloped sidewall 1211.The step that sloped sidewall can strengthen the subsequent deposition film covers.Also available other organic or inorganic film replaces photopolymer, and the technology of employing comprises hydatogenesis technology, sputter deposition craft and spin coating proceeding.
Fig. 3 F shows the generation type of conductive laminate 131, and this conductive laminate is formed (being used for electroplating) by the conductive grain layer 1312 that is positioned at bonding enhancement layer 1311 tops.This bonding enhancement layer can be selected to use, and has only when the crystal grain layer between insulating barrier 112 and the sacrifice layer 121 is bonding and just use when relatively poor.In the present embodiment, bonding enhancement layer is that thickness is the titanium layer of 10～100 nanometers, and crystal grain layer is that thickness is the copper or the nickel dam of 150～400 nanometers, and both all at room temperature form by sputtering technology.
Fig. 3 G shows the generation type of polymeric molds 132, and this polymeric molds 132 has opening 1321, is convenient to conductive laminate 131 is electroplated.In the present embodiment, this mould is that thickness is 3～30 microns, spin coating at room temperature, the photopolymer layer of solidifying under 150 ℃ of temperature.
Fig. 3 H shows the mode that conductive backings 133 is electroplated in polymeric molds 132 openings 1321.In the present embodiment, back plate thickness is 5～30 microns, is formed by copper or the nickel at room temperature electroplated.
Fig. 3 I shows by the structure behind the substrate 101 etchings formation back side resonant cavity 1012 as structural representation.In the present embodiment, directional etch agent such as potassium hydroxide or tetramethylammonium hydroxide aqueous solution are heated to the temperature that is no more than 90 ℃ carry out etching.Stop etching when etching into etch stop layer 102 bottoms.Shown in Figure 1B, resonant cavity also can pass through dry etch process, and for example mode such as plasma etching forms.
Fig. 3 J is as structural representation, shows the structure after crystal grain layer 1312, the bonding enhancement layer 1311 in the ventilation mouth 1331 and the sacrifice layer 121 in the etch stop layer 102 removed successively in the resonant cavity 1012, polymeric molds 132, the air-vent 1331.Remove after the sacrifice layer 121, form air gap 1211 at sealant 112 and conductive laminate 131.
Fig. 4 A～4I shows the making schematic flow sheet of the Electret Condencer Microphone of second embodiment of the invention.Fig. 4 A shows the generation type of substrate 201 both sides etch stop layers 202.Etch stop layer can be selected, and makes when the etchant with substrate 201 and barrier film conductive layer 211 contacts, and can keep relatively low rate of etch.In the present embodiment, substrate 201 is that 200～800 microns silicon materials are made by thickness, etch stop layer 202 is that the polycrystalline germanium layer of 50～400 nanometers is formed by thickness, and this polycrystalline germanium layer forms by the low temperature chemical vapor deposition process deposits being lower than under 300 ℃ the temperature.Other depositing operation is suitable equally, comprises sputter deposition craft, hydatogenesis technology and plasma excitation formula chemical vapor deposition method.
Fig. 4 B shows the generation type of embossing dielectric layer 203, and it preferably adopts and is lower than 3 relative dielectric constant.In the present embodiment, dielectric layer 203 is that thickness is 0.5～3 micron photopolymer layer, and it is at room temperature to form by spin coating.This polymer by solidifying, was back under 120～180 ℃ of temperature few 0.5 hour after configuration, formed sloped sidewall 2031, and the step that this sloped sidewall can strengthen the subsequent deposition film covers.
Fig. 4 C shows the generation type of conductive layer 211, and this conductive layer forms stress by embossing and eliminates perforation 2111 and electric contact mat 2112.In the present embodiment, this conductive layer is 50～400 nanometers by thickness, and at room temperature the titanium layer of sputtering sedimentation is made.Then, the polycrystalline germanium etch stop layer of substrate opposite is formed decorative pattern by the mixture of water, hydrogen peroxide and hydrogen chloride, constitute the required opening 2021 of rear portion resonant cavity etching.Also available other wet type of polycrystalline germanium or dry etch process etching.The latter can be based on plasma.
Fig. 4 D shows the generation type of insulated enclosure layer 212.Sealant 212 is formed the contact hole of opening to contact mat 2,112 2121 by embossing.In the present embodiment, sealant 212 is that thickness is 0.5～3 micron, is being lower than under 100 ℃ the temperature polychlorostyrene by the chemical vapor deposition method deposition for the paraxylene layer.Also available other organic or inorganic film replaces polychlorostyrene for paraxylene, and its technology comprises hydatogenesis technology, sputter deposition craft and spin coating proceeding.
Fig. 4 E shows the generation type of embossing sacrifice layer 221.In the present embodiment, sacrifice layer 221 is that thickness is 0.5～5 micron, at room temperature the photopolymer layer that deposits by spin coating proceeding.By solidifying, under 120～180 ℃ of temperature, be back to few 0.5 hour after this polymer configuration, form sloped sidewall 2211.The step that sloped sidewall can strengthen the subsequent deposition film covers.Also available other organic or inorganic film replaces photopolymer, and its technology comprises hydatogenesis technology, sputter deposition craft and spin coating proceeding.
Fig. 4 F shows the generation type of conductive laminate 231, and this conductive laminate is formed (being used for electroplating) by the conductive grain layer 2312 that is positioned at bonding enhancement layer 2311 tops.Bonding enhancement layer can be selected, and makes to have only when the crystal grain layer between insulating barrier 212 and the sacrifice layer 221 bonding relatively poor just to use.In the present embodiment, bonding enhancement layer is that thickness is the titanium layer of 10～100 nanometers, and crystal grain layer is that thickness is the copper or the nickel dam of 150～400 nanometers, and both are all by sputtering technology moulding at room temperature.
Fig. 4 G shows the generation type of polymer machinery enhancement layer 232, and this polymer machinery enhancement layer 232 has opening 2321.In the present embodiment, this enhancement layer is that thickness is 3～300 microns, spin coating at room temperature, sensitization SU～8 polymeric layers that solidify under 300 ℃ of temperature.Directional etch agent such as potassium hydroxide or tetramethylammonium hydroxide aqueous solution are heated to the temperature that is no more than 90 ℃ carry out the substrate etching.Stop etching when etching into etch stop layer 202 front ends.Resonant cavity 2012 also can pass through dry etch process, forms as modes such as plasma etchings.
Fig. 4 H removes crystal grain layer 2312 and bonding enhancement layer 2311 structural representation afterwards, and wherein, except the zone on contact mat 2212 tops, the not embossed polymer machinery enhancement layer 232 in other position covers.
Fig. 4 I shows and removes etch stop layer 202 and sacrifice layer 221 structure afterwards in the resonant cavity 2012 successively as structural representation.Remove after the sacrifice layer 221, form air gap 2211 at sealant 212 and conductive laminate 231.
Fig. 5 A～5I shows the making schematic flow sheet of the Electret Condencer Microphone of third embodiment of the invention.
Fig. 5 A is as structural representation, shows the structure after 3011 etchings of substrate 301 back side resonant cavitys.In the present embodiment, substrate 301 is that 200～1000 microns acrylate layer is made by thickness, and etching is finished by the laser formation cutting.Also available wet type or dry-etching mode replace laser cutting to form back side resonant cavity 3011.
Fig. 5 B shows the generation type of the etch stop layer 302 of covered substrate 301.Etch stop layer 302 must be selected, and makes when contacting the processing aid of using, and can keep relatively low rate of etch.In the present embodiment, etch stop layer 302 is 50 nanometers～2 micron by thickness, makes by the chloro paraxylene layer of chemical vapor deposition method deposition being lower than under 60 ℃ the temperature.Also available other organic or inorganic film replaces polychlorostyrene for paraxylene, and its technology comprises hydatogenesis technology, sputter deposition craft and spin coating proceeding.
Fig. 5 C shows the generation type of adhesive layer 303 on separate substrates 304.In the present embodiment, substrate 304 is that 200～800 microns silicon wafer is made by thickness, and adhesive layer 303 is that thickness is 0.5～20 micron, the polymeric layer of spin coating moulding at room temperature.
Fig. 5 D shows the connected mode of structure shown in Fig. 5 B and Fig. 5 C, and this connection is strengthened by adhesive layer 303.
Fig. 5 E shows the generation type of mechanical type soft membrane 313.Barrier film 313 can be the conduction or the insulation.In the present embodiment, membrane layer is that thickness is 0.5～3 micron, at the chloro paraxylene layer that is lower than under 60 ℃ the temperature by the chemical vapor deposition method deposition.Also available other organic or inorganic film replaces polychlorostyrene for paraxylene, and its technology comprises sputter deposition craft and spin coating proceeding.
Fig. 5 F be lamination separate and remove after structural representation, wherein, this lamination is made up of substrate 304 and adhesive layer 303.
Fig. 5 G shows the generation type of conductive layer 311, and this conductive layer forms stress by embossing and eliminates perforation 3111 and electric contact mat 3112.In the present embodiment, this conductive layer is 50～400 nanometers by thickness, and at room temperature the titanium film of sputtering sedimentation is made.
Fig. 5 H shows the generation type of insulated enclosure layer 312.Sealant 312 forms the contact hole 3121 that leads to contact mat 3112 by embossing.In the present embodiment, sealant 312 is that thickness is 0.5～3 micron, is being lower than under 60 ℃ the temperature polychlorostyrene by the chemical vapor deposition method deposition for paraxylene.Also available other organic or inorganic film replaces polychlorostyrene for paraxylene, and its technology comprises sputter deposition craft and spin coating proceeding.
Fig. 5 I shows the generation type of the sacrifice layer 313 of embossing.In the present embodiment, sacrifice layer 313 is that thickness is 0.5～5 micron, at room temperature the photosensitive polymer film that deposits by spin coating proceeding.By solidifying, under 70～180 ℃ of temperature, be back to few 0.5 hour after this polymer configuration, form sloped sidewall 3131.The step that sloped sidewall can strengthen the subsequent deposition film covers.Also available other organic or inorganic film replaces photopolymer, and its technology comprises sputter deposition craft and spin coating proceeding.
Fig. 5 J shows the generation type of conductive laminate 331, and this conductive laminate is made up of the top conductive crystal grain layer 3312 that is positioned at bonding enhancement layer 3311 tops, optional bottom.Have only when the crystal grain layer between insulating barrier 312 and the sacrifice layer 313 is bonding and just need use bonding enhancement layer 3311 when relatively poor.In the present embodiment, bonding enhancement layer is that thickness is the titanium layer of 10～100 nanometers, and crystal grain layer is that thickness is the copper or the nickel dam of 150～400 nanometers, and both all at room temperature make by sputtering technology.
Fig. 5 K shows the schematic diagram that the backboard lamination discharges, and this backboard lamination is formed by 331 and 333, adopts the technology shown in Fig. 3 G～3J or Fig. 4 G～4I to make.
Obviously, aforesaid embodiments of the invention can have multiple mode.These modes should be considered as being included within the principle and scope of the present invention.For one of skill in the art, corresponding modification all should be included within the scope of following claim.
Claims (21)
1. Electret Condencer Microphone is characterized in that it comprises:
A substrate has a resonant cavity at least on this substrate;
A barrier film, it is located at resonant cavity top and is connected with substrate; When being excited by acoustic pressure wave, realizes by described barrier film mechanical oscillation;
A backboard, it is located at barrier film top, and this backboard is provided with a plurality of perforation;
Wherein, between backboard and barrier film, has air gap;
Described barrier film, air gap and backboard constitute a capacitor.
2. Electret Condencer Microphone as claimed in claim 1 is characterized in that described substrate is made by conductor, semiconductor or insulating material, and described conductor, semiconductor or insulating material are silicon material, glass or plastics, and this substrate thickness is 200～1000 microns.
3. Electret Condencer Microphone as claimed in claim 1 is characterized in that, described membrane shape is circle or rectangle, and the diameter of barrier film or the length of side are 50 microns to 1 centimetre.
4. Electret Condencer Microphone as claimed in claim 1 is characterized in that described barrier film also comprises electrode layer and sealant.
5. Electret Condencer Microphone as claimed in claim 5 is characterized in that described electrode layer comprises at least one metal level, and this electrode layer gross thickness is 0.01～1 micron.
6. Electret Condencer Microphone as claimed in claim 5 is characterized in that, described septum electrode layer comprises the perforation that is used to discharge mechanical stress.
7. Electret Condencer Microphone as claimed in claim 5 is characterized in that described electrode layer partly extends to the zone on described substrate top.
8. Electret Condencer Microphone as claimed in claim 5 is characterized in that, described sealant is a low stress hydrophobic layer, and it is made by a kind of polymer, and the sealing layer thickness is 0.1～10 micron.
9. Electret Condencer Microphone as claimed in claim 5 is characterized in that, described sealant is made by a kind of poly dimethyl benzene polymer.
10. Electret Condencer Microphone as claimed in claim 5 is characterized in that, has a dielectric layer at least between the barrier film that is electrically connected and conduction or semi conductive substrate, and this medium thickness is 0.01～5 micron.
11. Electret Condencer Microphone as claimed in claim 1 is characterized in that, described backboard comprises one deck electrode layer and bigger insulating barrier or the conductive support layer of one deck hardness, and every layer has a perforation at least.
12. Electret Condencer Microphone as claimed in claim 11 is characterized in that, the diameter of described perforation or the length of side are 0.1～50 micron.
13. the manufacture method of Electret Condencer Microphone as claimed in claim 1, it comprises: form at least one resonant cavity on substrate;
Form barrier film on resonant cavity top, this barrier film is connected with substrate;
On barrier film top backboard is set, a plurality of perforation are arranged on this backboard;
Between backboard and barrier film, form air gap.
14. the manufacture method of Electret Condencer Microphone as claimed in claim 13 is characterized in that, one deck etch stop layer is arranged between described substrate and barrier film.
15. etch stop layer as claimed in claim 14 is characterized in that, described etch stop layer is that a layer thickness is the polycrystalline germanium film of 50～400 nanometers.
16. the manufacture method of Electret Condencer Microphone as claimed in claim 13 is characterized in that, described resonant cavity forms by deep reactive ion etch, wet chemical etch, machine cuts or optics cutting, and the temperature of resonant cavity embossed technology is 20 ℃～100 ℃.
17. Electret Condencer Microphone manufacture method as claimed in claim 13, it is characterized in that, described electrode is by one or more the group technology deposition in the low temperature deposition process, described low temperature deposition process is hydatogenesis, sputtering sedimentation, chemical vapour deposition (CVD), and the depositing temperature of described substrate is 20 ℃～90 ℃.
18. Electret Condencer Microphone manufacture method as claimed in claim 13 is characterized in that, the dielectric layer between the barrier film of electrical connection and conduction or the semiconductive substrate is by the polymer spin coating and be solidified to form, and the technological temperature of whole process is 20 ℃～180 ℃.
19. Electret Condencer Microphone manufacture method as claimed in claim 13 is characterized in that, described air gap forms by the dry type or the Wet-type etching of polymer sacrifice layer, and the deposition of sacrifice layer, embossing and the temperature of removing are 20 ℃～110 ℃.
20. Electret Condencer Microphone manufacture method as claimed in claim 13, it is characterized in that, the non-yielding prop layer of described backboard by in the low temperature process one or more combination and form, described low temperature process is galvanoplastic or photoetching process, the technological temperature of whole process is 20 ℃～180 ℃.
21. Electret Condencer Microphone manufacture method as claimed in claim 13, it is characterized in that, described sealant forms by one or more the combination in the low temperature deposition process, and described low temperature deposition process is hydatogenesis, sputtering sedimentation, chemical vapour deposition (CVD), and depositing temperature is 20 ℃～90 ℃.
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| US12360508P | 2008-04-11 | 2008-04-11 | |
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