CN101570851A - Method for applying magnetic field to sputtering coated cathode - Google Patents
Method for applying magnetic field to sputtering coated cathode Download PDFInfo
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- CN101570851A CN101570851A CNA2009100270404A CN200910027040A CN101570851A CN 101570851 A CN101570851 A CN 101570851A CN A2009100270404 A CNA2009100270404 A CN A2009100270404A CN 200910027040 A CN200910027040 A CN 200910027040A CN 101570851 A CN101570851 A CN 101570851A
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Abstract
The invention discloses a method for applying a magnetic field to a sputtering coated cathode, which comprises the following steps that: a magnetic field assistant sputtering mode is adopted to perform film coating; a target and a substrate are arranged in an electric field in parallel, the target is positioned on the surface of the cathode so that a plasma zone is formed between the target and the substrate; ions bombard the target to generate sputtering; and the sputtered target atoms or molecules are deposited on the substrate to form a film. The method is characterized in that the back side of the substrate is provided with a magnetic pole facing to a permanent magnet or an electromagnet in the direction of the target, the back side of the target is provided with a ferromagnetic sheet so that the target is positioned in the magnetic field, and the strength of the magnetic field is evenly distributed and the magnetic field is arranged in a direction vertical to the surface of the target. The method can greatly improve the speed of sputtering film coating and the crystallization quality of the film coating, and can etch the target evenly on the whole and improve the utilization rate of the target to between 85 and 90 percent; and simultaneously, the method avoids the corrosion influence of cooling water on the magnet, can achieve sputtering at a high temperature, and is more advantageous for improving the sputtering rate of the target.
Description
Technical field
The present invention relates to a kind of preparation method of thin-film material, be specifically related to a kind of by the auxiliary method that realizes sputter coating in magnetic field.
Background technology
Since 1870, people just were used for film preparation with sputtering phenomenon.The principle of sputtering method plated film is high-velocity particles (being the positive ion that is quickened by electric field mostly) bombardment target surface, overflow from the target surface behind the atom on target surface and molecule and the high-velocity particles exchange energy, this phenomenon is called sputter, when target atom that sputters or molecule and substrate surface meet, can the cohesion deposition take place at substrate surface, sedimentary atom or molecule spread from the teeth outwards, and nucleation is so that the agglomerating final thin film layer that forms of growing up.The significant parameter that characterizes the sputter characteristic has the speed of sputter threshold value, sputtering raste, sputtering particle and energy etc.The kind of sputter coating has many, as direct current diode sputtering, three utmost points and four utmost point sputters, magnetron sputtering, radio-frequency sputtering, bias sputtering, ion beam sputtering and reactive sputtering etc.
The basic device of magnetron sputtering is to improve electrode structure on the basis of d.c. sputtering or radio-frequency sputtering device, places permanent magnet or electro-magnet at the target cathode inner chamber, makes the upper section zone of target material surface form a transverse magnetic field that is parallel to the surface.The magnetron sputtering principle is exactly that electronics quickens to fly under effect of electric field in the process of substrate and bumps with ar atmo, and ionization goes out a large amount of argon ions and secondary electron.Wherein, argon ion quickens the bombardment target under effect of electric field, sputter a large amount of target atom, is neutral target atom (or molecule) and is deposited on film forming on the substrate.Secondary electron is subjected to the effect of transverse magnetic field in flying to the process of substrate, be bound near in the plasma body zone of target surface and do cyclotron motion, prolong electronics greatly and arrived the anodic stroke, making in this trip with the ar atmo ionized probability that bumps increases greatly, the density of the positive ion of bombardment target thereby also raising greatly, thus the speed of sputter improved.
The major advantage of magnetron sputtering technology is exactly the probability of collision that utilizes the auxiliary constraint in this magnetic field secondary electron, improves electronics and working gas, thereby improve ionization efficiency, obtain higher coated film deposition speed, add that nearly all metal, alloy and pottery can carry out plated film as target, magnetron sputtering plating has been widely used in scientific research and large-area coating film production every field.But also there are some significant disadvantages in common magnetron sputtering technology: the one, and the reason of the magnetic field structure that adopts in the negative electrode, near the target material surface magnetic field of uneven distribution produce uneven distribution plasma body, cause the inhomogeneous etching on the target face, the utilization ratio of plane magnetic controlled sputtering target material has only 25～45%, causes the insufficient of the utilization of resources; The 2nd, at the target near surface, along with the increase of leaving the target surface distance, plasma concentration reduces rapidly the transverse magnetic field on target surface with the charged particle constraint, and most neutral particle just is not subjected to the constraint in magnetic field to fly to coating film area, is difficult to obtain high-quality film; The 3rd, because magnet is set in the negative electrode, the high temperature that produced by ion bombardment, target can cause that the temperature of negative electrode raises, and causes that for avoiding temperature magnet performance decrease and even magnet lost efficacy, and needed anticathode to carry out water-cooled in the prior art.And in the simple negative electrode of structure, magnet often is immersed in the water coolant, is corroded, and has shortened the work-ing life of magnet, and simultaneously, the sputter rate of the target that the cooling negative electrode also makes to a certain extent descends.
Summary of the invention
The object of the invention provides a kind of method that applies magnetic field to sputtering coated cathode, and when improving target utilization, solves the problem of the magnet life-span decline that the negative electrode cooling structure causes in the prior art, can also simplify the structure of negative electrode.
For achieving the above object, the technical solution used in the present invention is: a kind of method that applies magnetic field to sputtering coated cathode, adopt the auxiliary sputter mode plated film in magnetic field, target and substrate parallel are arranged in the electric field, target is positioned at cathode surface, make between target and the substrate and form plasma zone, the ion bombardment target produces sputter, the target particle that sputters is deposited on and forms film on the substrate, dorsal part at substrate is provided with permanent magnet or the electro-magnet of a magnetic pole towards the target direction, at described target dorsal part one ferromegnetism sheet material is set, makes described target be arranged in magnetic field, the direction in magnetic field is perpendicular to the target material surface setting.
In the technique scheme, the end face that the pole pair of described permanent magnet or electro-magnet sensing target is answered is the curved surface of indent, the size of curved surface and shape setting are in this magnetic field whole target, and the intensity in magnetic field is vertical with target material surface along being evenly distributed of target material surface, direction.
Described ferromegnetism sheet material is iron plate or ferrimag sheet, also can be ferromagnetic compound sheet, and its thickness is 0.2～8 millimeter.
In the sputtering coated cathode of the present invention cooling water system can be set according to circumstances, temperature with the control target material surface, but because magnet is arranged at the substrate dorsal part, the target temperature can be higher than target temperature of the prior art, does not influence the vacuum tightness of device as long as guarantee cathode material.
In the technique scheme, by permanent magnet or electro-magnet being set at the substrate dorsal part, at the target dorsal part ferromegnetism sheet material is set, because magnetic field can be selected the path of magnetic resistance minimum automatically, thereby can produce a uniform magnetic field in the direction approximately perpendicular to target material surface, whole target is in this magnetic field.The shape of magnet can adopt right cylinder or rectangular parallelepiped according to the difference of filming equipment, and with corresponding to circular or rectangular target, preferred scheme is that the end face that points to target is designed to the curved surface shaped of indent, to produce a more uniform magnetic field of pointing to target.The pairing magnetic pole of curvature portion can be got the N utmost point or the S utmost point according to the material of plated film target, and make even face or curved surface of other end all can.
Because the technique scheme utilization, the present invention compared with prior art has following advantage:
1. the present invention has changed and utilizes crossed electric and magnetic field to keep the way of planar magnetic control sputtering in the prior art, the technology of " direction that magnetic field is set is perpendicular to the target material surface setting " has creatively been proposed, experiment shows, adopt this method can increase substantially the speed of sputter coating, increase substantially the crystalline quality of plated film;
2. the present invention has formed uniform Distribution of Magnetic Field by being constructed perpendicular to the magnetic field of target material surface at target material surface, the whole etching target more equably of energy, and the utilization ratio of target can bring up to 85～90%;
3. the present invention is arranged on the substrate dorsal part with magnet, by being set at the target dorsal part, the ferromegnetism sheet material obtains magnetic field perpendicular to target, therefore, magnet does not need to be placed on cathode internal cavity, avoided the infection of water coolant to magnet, simultaneously, cathode temperature can not be subjected to the restriction of magnet Curie temperature, can under comparatively high temps, realize sputter, help improving the sputter rate of target.
Description of drawings
Fig. 1 is the device synoptic diagram of the embodiment of the invention one;
Fig. 2 is a film coating method Distribution of Magnetic Field synoptic diagram among the embodiment one;
Fig. 3 is the synoptic diagram of circular target among the embodiment one;
Fig. 4 is the synoptic diagram of rectangle target among the embodiment one;
When Fig. 5 is sputter Cu target, the aura distribution of shapes photo that embodiment one method produces;
Fig. 6 is the comparison of atomic force microscope (AFM) photo of the copper film surface that obtains of embodiment one method and common magnetically controlled sputter method;
Fig. 7 is that embodiment one method and common magnetically controlled sputter method target etching degree compare photo.
Wherein: 1, target; 2, substrate; 3, magnet; 4, negative electrode; 5, entrance of cooling water; 6, cooling water outlet; 7, iron plate.
Embodiment
Below in conjunction with drawings and Examples the present invention is further described:
Embodiment one: a kind of method that applies magnetic field to sputtering coated cathode, adopt the auxiliary sputter mode plated film in magnetic field, shown in accompanying drawing 1, target 1 and substrate 2 are set in parallel in the electric field, and target 1 is positioned at negative electrode 4 surfaces, make between target 1 and the substrate 2 and form plasma zone, ion bombardment target 1 produces sputter, target atom that sputters or molecule deposition form film on substrate 2, described target 1 is arranged in the magnetic field that is produced by magnet 3, and the direction in magnetic field is perpendicular to the target material surface setting.
In the present embodiment, described direction perpendicular to the production method in the magnetic field of target material surface setting is, dorsal part at substrate 2 is provided with permanent magnet or the electro-magnet of a magnetic pole towards the target direction, the end face that the pole pair of described permanent magnet or electro-magnet sensing target 1 is answered is the curved surface of indent, the size of curved surface and shape setting are in this magnetic field whole target 1, and the direction in magnetic field is vertical with target material surface.
At described target 1 dorsal part one iron plate 7 is set, its thickness is 2～8 millimeters.
In actual fabrication, negative electrode adopts water quench, and cathode construction is provided with entrance of cooling water 5 and cooling water outlet 6.Shown in accompanying drawing 2, field direction of the present invention is perpendicular to the target material surface setting; Accompanying drawing 3 synoptic diagram when adopting circular target; Accompanying drawing 4 is the synoptic diagram when adopting the rectangle target.
Adopt aforesaid method can strengthen the intensity and the surface of the distribution range that enlarges plasma body to substrate (plating piece) of plasma body significantly, the effect of generation is: the speed that can increase substantially sputter coating; Increase substantially the crystalline quality of plated film; Increase substantially the utilization ratio of target; The magnetic target there be the sputter effect same with non magnetic target.When Fig. 5 is sputter Cu target, the photo of the aura distribution of shapes that this sputtering method produces, the aura that the target material surface place is very strong extends to the surface of substrate always.In addition, change the target repeated experiments and find that also for same magnet, the aura profile does not change with the change of target kind.Fig. 6 is with the comparison by atomic force microscope observation of the copper thin film crystallization situation of this sputtering method and common magnetically controlled sputter method preparation.Copper particulate size is obviously different in two kinds of films, and promptly the crystallization degree difference of film is very big.When Fig. 7 is this sputtering method and common magnetically controlled sputter method, the comparison of target etching degree of uniformity.A figure left side is the typical ditch shape annular etching of common plane magnetron sputtering formation, and figure is right to show this sputter to the relatively more uniform etching of overall target, and the utilization ratio of target obviously improves.
Adopt the method and the common planar magnetically controlled sputter method of present embodiment to compare test, test situation is described below:
The sputter semiconductor silicon film: argon gas operating air pressure 0.5Pa, 35mm between target and substrate, the diameter 50mm of magnet, magneticstrength 3500 Gausses, 70 watts of radio-frequency sputtering power, depositing of thin film speed is 17.5nm/min.And use the common planar magnetron sputtering, the plated film speed of sputtering power 200 watt-hours is only 4nm/min.
Splash-proofing sputtering metal copper film: argon gas operating air pressure 3.0Pa, target and substrate spacing 25mm, the diameter 50mm of magnet, magneticstrength 1500 Gausses, 70 watts of radio-frequency sputtering power, depositing of thin film speed is 6.9nm/min.And under similarity condition, use the common planar magnetron sputtering, plated film speed is 2.4nm/min.
Splash-proofing sputtering metal aluminium film: argon gas operating air pressure 0.5Pa, target and substrate spacing 25mm, the diameter 25mm of magnet, magneticstrength 3000 Gausses, radio-frequency sputtering power 150 watt-hour depositing of thin film speed are 45nm/min.And use the common planar magnetron sputtering, the plated film speed of sputtering power 150 watt-hours is 23.5nm/min.
Splash-proofing sputtering metal copper film: argon gas and nitrogen blending ratio are 8: 1, operating air pressure 3Pa, and target and substrate spacing 25mm, the diameter 25mm of magnet, magneticstrength 3000 Gausses, 150 watts of radio-frequency sputtering power, depositing of thin film speed is 52nm/min.And under similarity condition, use the common planar magnetron sputtering, plated film speed is 32nm/min.
The splash-proofing sputtering metal iron thin film: argon gas operating air pressure 3Pa, target and substrate spacing 25mm, the diameter 25mm of magnet, magneticstrength 3000 Gausses, 150 watts of radio-frequency sputtering power, depositing of thin film speed is 23.9nm/min.And under similarity condition, use the common planar magnetron sputtering, plated film speed is 6.2nm/min.
Claims (3)
1. method that applies magnetic field to sputtering coated cathode, adopt the auxiliary sputter mode plated film in magnetic field, target and substrate parallel are arranged in the electric field, target is positioned at cathode surface, make between target and the substrate and form plasma zone, the ion bombardment target produces sputter, the target particle that sputters is deposited on and forms film on the substrate, it is characterized in that: the dorsal part at substrate is provided with permanent magnet or the electro-magnet of a magnetic pole towards the target direction, at described target dorsal part one ferromegnetism sheet material is set, make described target be arranged in magnetic field, the direction in magnetic field is perpendicular to the target material surface setting.
2. the method that applies magnetic field to sputtering coated cathode according to claim 1, it is characterized in that: the end face that the pole pair of described permanent magnet or electro-magnet sensing target is answered is the curved surface of indent, the size of curved surface and shape setting are in this magnetic field whole target, and the intensity distribution in magnetic field is even, direction is vertical with target material surface.
3. sputtering film coating method according to claim 1 is characterized in that: described ferromegnetism sheet material is iron plate, ferrimag sheet or ferromagnetic compound sheet, and its thickness is 0.2～8 millimeter.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2009100270404A CN101570851B (en) | 2009-05-25 | 2009-05-25 | Method for applying magnetic field to sputtering coated cathode |
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| CN2009100270404A CN101570851B (en) | 2009-05-25 | 2009-05-25 | Method for applying magnetic field to sputtering coated cathode |
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| CN101570851B CN101570851B (en) | 2011-04-13 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI607482B (en) * | 2016-01-08 | 2017-12-01 | Linco Technology Co Ltd | Interpolar target cathode device |
| CN108588659A (en) * | 2018-05-04 | 2018-09-28 | 京磁材料科技股份有限公司 | Efficient filming equipment |
| CN114540783A (en) * | 2022-01-12 | 2022-05-27 | 温州瑞明工业股份有限公司 | Ion implantation method for efficient ionization |
-
2009
- 2009-05-25 CN CN2009100270404A patent/CN101570851B/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI607482B (en) * | 2016-01-08 | 2017-12-01 | Linco Technology Co Ltd | Interpolar target cathode device |
| CN108588659A (en) * | 2018-05-04 | 2018-09-28 | 京磁材料科技股份有限公司 | Efficient filming equipment |
| CN114540783A (en) * | 2022-01-12 | 2022-05-27 | 温州瑞明工业股份有限公司 | Ion implantation method for efficient ionization |
| CN114540783B (en) * | 2022-01-12 | 2023-12-05 | 温州瑞明工业股份有限公司 | Efficient ionized ion implantation method |
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| CN101570851B (en) | 2011-04-13 |
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Address after: Suzhou City, Jiangsu province 215137 Xiangcheng District Ji Road No. 8 Patentee after: Soochow University Address before: 215123 Suzhou City, Suzhou Province Industrial Park, No. love road, No. 199 Patentee before: Soochow University |
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Granted publication date: 20110413 Termination date: 20180525 |