CN101561475A - Method and device for non-contact detection of LED luminescence properties - Google Patents
Method and device for non-contact detection of LED luminescence properties Download PDFInfo
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- CN101561475A CN101561475A CNA2009101039686A CN200910103968A CN101561475A CN 101561475 A CN101561475 A CN 101561475A CN A2009101039686 A CNA2009101039686 A CN A2009101039686A CN 200910103968 A CN200910103968 A CN 200910103968A CN 101561475 A CN101561475 A CN 101561475A
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Abstract
The invention discloses a non-contact detection method of LED luminescence properties. The method comprises the following steps: a PN junction area for an LED device to be tested is irradiated with short-term pulsed light at the constant temperature, and the detection to the luminescence properties of the LED device to be tested is realized by detecting the self-luminescent spectrum of a PN junction; the invention also discloses a non-contact detection device based on the LED luminescence properties of the method; and the invention has the beneficial effects that the luminescence properties of the epitaxial wafer of the LED, the wafer or the single LED chip can be detected under the condition that the device to be tested is not contacted, therefore, the contact damage of the LED device to be tested is avoided, the detection and the screening of the LED products are propelled to the chip even to the epitaxial wafer link from the link of the finished products, and the cost of the LED is reduced.
Description
Technical field
The present invention relates to this technical field of chip detection, relate to a kind of non-contact detection method and device of the LED characteristics of luminescence in particular.
Technical background
LED (Light Emitting Diode) is with its intrinsic characteristics, and as power saving, long, vibration resistance of life-span, characteristics such as response speed is fast, cold light source are widely used in fields such as pilot lamp, signal lamp, display screen, Landscape Lighting.But, owing to there is not a desirable checkout equipment, detect and sorting has become the technical bottleneck on enhancing productivity and reducing production costs of many led chips manufacturer.Therefore, propose a kind of to each led chip unit on epitaxial wafer or the wafer fast, low-cost, lossless detection method and equipment, have great importance for the development of the industry of led chip.
U.S.'s patent of invention (patent No.: US006670820B2) disclose a kind of method and instrument that is used for semiconductor material and the detection of device electroluminescence characters.It detects principle is to apply exciting light on led chip, between p district and n district, apply simultaneously a forward biased voltage, form the traction electric field, attract the hole in p district and the active area of electronics to the centre in n district to move, in active area generation radiation recombination, produce recombination luminescence then, the voltage that is biased is lower than the turn-on threshold of LED, to nonequilibrium carrier is that exerting an influence of electron-hole pair is less, can ignore; Recombination luminescence with light receiving element such as photodiode receiving chip active area, again in conjunction with the absorption coefficient that excites light intensity and chip, calculate the concentration of photo-generated carrier, be combined with the recombination luminescence amount in source region and actual light and inject and arrive the carrier concentration of active area, just can quantitative test go out the electroluminescent properties of the led chip of surveying.Chinese invention patent (patent No. 02123646.1) discloses a kind of LED epitaxial wafer electroluminescent nondestructive detection method.This Invention Announce detects for carrying out electroluminescence, settle two electrodes on the epitaxial wafer surface, be respectively and be fixing negative electrode (connecing power cathode) and positive electrode, one high-voltage constant current source is added between two electrodes, by positive electrode is moved the detection of finishing whole epitaxial wafer luminous mass from the teeth outwards, obtain the electroluminescence quality of epitaxial wafer full wafer.Can also obtain the electrical parameter for the LED epitaxial wafer such as forward conduction voltage, reverse leakage current by this method.Above-mentioned method by the electroluminescence principle needs the direct contact chip of detector probe, and operation easier is bigger, causes the pollution even the damage of chip easily.In addition, test probe also has bigger loss in the process that detects.
Chinese invention patent (the patent No.: 98124685.0) disclose a kind of photoluminescence spectrum scanning imaging instrument, because the spectral distribution of photoelectric material epitaxial wafer is relevant with band structure, the spectrum of its electroluminescence and photoluminescence is the same, like this with laser scanning photoelectric material epitaxial wafer, obtain photoluminescence spectra, the luminosity and the spectral purity of LED epitaxial wafer are carried out online detection.Said method adopts the method for photoluminescence principle, can only detect the LED epitaxial wafer, and operation easier is very big, and cost is very high.
02265834.3), Chinese invention patent (letters patent number: 02265834.3) and Chinese invention patent (letters patent number: 02136269.6) disclose several detection methods respectively in addition, Chinese invention patent (letters patent number: at the LED finished product.Owing to be critical step very in the production run that is encapsulated in the whole LED finished product of led chip, therefore the non-contact detecting of led chip before encapsulating and in the process of encapsulation is just seemed is necessary very much.But, also do not have desirable detection method at this technique direction at present.
Summary of the invention
The present invention proposes a kind of non-contact detection method of the LED characteristics of luminescence, this method with the PN junction zone of to be measured of short-time pulse rayed LED, realizes detection to be measured the characteristics of luminescence of LED by the autoluminescence spectrum that detects PN junction under constant temperature.
The temperature of constant temperature is identical with electroluminescent PN junction junction temperature under charge carrier intensity the same terms.
To be measured of LED is a kind of in LED epitaxial wafer, wafer or the single led chip.
The short-time pulse optical wavelength is less than to be measured luminescent spectrum wavelength of LED.
The invention allows for a kind of non-contact detection device of the LED characteristics of luminescence, it is formed by detecting control and signal acquisition process unit, pulsed light generation unit, exciting light lens combination, constant temperature oven, color filter, autoluminescence lens combination and optical detection device;
The annexation of each device is as follows: to be measured of LED places constant temperature oven, the pulsed light that the pulsed light generation unit sends shines the PN junction zone of to be measured of LED after the exciting light lens combination is assembled, the autoluminescence that LED is to be measured is after color filter filters, assembled to optical detection device by the autoluminescence lens combination, optical detection device detects control and signal acquisition process cell processing with the testing result input; Examined control of pulsed light generation unit and signal acquisition process unit controls; Examined control of calorstat temperature and signal acquisition process unit controls.
The pulsed light generation unit can adopt light-pulse generator, perhaps, adopts the light-emitting device that is made of constant light source and chopping the light device.Described chopping the light device can adopt chopper or shutter.
Useful technique effect of the present invention is: can the characteristics of luminescence to LED epitaxial wafer, wafer or single led chip detect under the situation of contact measured device not, avoid the contact of to be measured of LED is damaged, the detection of LED product and screening are advanced to " chip " and even epitaxial wafer link by " finished product " link, have reduced the cost of LED.
Description of drawings
The schematic diagram of Fig. 1, detection method of the present invention and device;
Detect control and signal acquisition process unit 1, pulsed light generation unit 2, pulsed light 3, autoluminescence lens combination 4, to be measured 5 of LED, constant temperature oven 6, autoluminescence 7, color filter 8, exciting light lens combination 9, optical detection device 10 are set.
Embodiment
Ultimate principle: the luminous Conversion of energy that is object will absorb in some way is the process of optical radiation.LED is a kind of typical light emitting semiconductor device, and its luminescence mechanism is the compound of nonequilibrium carrier, and the luminescence process of LED comprises three parts: charge carrier injection, radiation recombination and luminous energy transmission.The injection mode of charge carrier generally has two kinds: electric current injects and light absorption.The electric current injection mode causes luminously is called electroluminescence, and this is the general illumination mode that LED uses as device, therefore will detect the characteristics of luminescence of LED usually, be by with chip or finished product Ohmic contact, apply and measure after electricity injects.The luminous photoluminescence that is called that light absorption causes.From the luminescence process of LED as can be seen, electroluminescence and photoluminescence have only the charge carrier injection mode that difference is arranged, latter two luminous process is the same, therefore, when the injection charge carrier intensity under the dual mode is identical with device temperature when identical (referring to that the excess carriers number that injects is identical), photoluminescence is consistent with electroluminescent spectrum, and its characteristics of luminescence only depends on the physical arrangement of LED material self character and device, and is irrelevant with the source that produces excess carriers.But, in actual detection, the photoelectric characteristic of LED under photoluminescence and electroluminescence is also not quite identical, this be because, go in the mode at light beam, the temperature that prolonged exposure can cause light beam to go into the PN junction of LED under the mode at the energy accumulation of the light on LED surface can be higher than the PN junction temperature under the electric injection mode, and temperature is to influence the luminous key factor of LED radiation recombination, if can overcome two kinds of temperature effects under the different injection modes, can think that then LED is identical with the characteristics of luminescence under the electroluminescence at photoluminescence.
Adopt the present invention program, to be measured of LED is placed under the constant temperature, PN junction zone with to be measured of short-time pulse rayed LED, the problem that the PN junction temperature that just can avoid the exciting light prolonged exposure and cause raises, make the resulting photoelectric characteristic of photoluminescence identical, thereby realize non-contact detecting the LED characteristics of luminescence with the characteristics of luminescence under the electroluminescence.
Apparatus: apparatus of the present invention are formed by detecting control and signal acquisition process unit 1, pulsed light generation unit 2, autoluminescence lens combination 4, constant temperature oven 6, color filter 8, exciting light lens combination 9 and 10 7 parts of optical detection device.
During detection, to be measured of LED is placed constant temperature oven 6, the pulsed light that pulsed light generation unit 2 sends shines the PN junction zone of to be measured of LED after exciting light lens combination 4 is assembled, form autoluminescence, autoluminescence is after color filter 8 filters, assembled to optical detection device 10 by autoluminescence lens combination 9, optical detection device 10 detects control and signal acquisition process unit 1 with the testing result input, is analyzed by the photoelectric characteristic that detects to be measured of control and 1 couple of LED in signal acquisition process unit; 2 examined controls of pulsed light generation unit and 1 control of signal acquisition process unit; Constant temperature oven 6 temperature are by detecting control and 1 control of signal acquisition process unit.
Usually, detecting control is set to the steady temperature of signal acquisition process unit 1 constant temperature oven 6: with the identical temperature of electroluminescent PN junction junction temperature under the identical charge carrier intensity of injection (referring to that the excess carriers number that injects is identical).
The pulsed light wavelength that pulsed light generation unit 2 is produced is less than to be measured luminescent spectrum wavelength of LED.Optical detection device 10 can be a spectrum detection device, also can be other photoelectric conversion device.
Claims (6)
1, a kind of non-contact detection method of the LED characteristics of luminescence is characterized in that: under constant temperature, with the PN junction zone of to be measured of short-time pulse rayed LED, realize detection to be measured the characteristics of luminescence of LED by the autoluminescence spectrum that detects PN junction.
2, the non-contact detection method of the LED characteristics of luminescence according to claim 1 is characterized in that: the temperature of constant temperature is identical with electroluminescent PN junction junction temperature under charge carrier intensity the same terms.
3, the non-contact detection method of the LED characteristics of luminescence according to claim 1 is characterized in that: the short-time pulse optical wavelength is less than to be measured luminescent spectrum wavelength of LED.
4, a kind of non-contact detection device of the LED characteristics of luminescence is characterized in that: it is formed by detecting control and signal acquisition process unit (1), pulsed light generation unit (2), exciting light lens combination (4), constant temperature oven (6), color filter (8), autoluminescence lens combination (9) and optical detection device (10); To be measured of LED places constant temperature oven (6), the pulsed light that pulsed light generation unit (2) sends shines the PN junction zone of to be measured of LED after exciting light lens combination (4) is assembled, the autoluminescence that LED is to be measured is after color filter (8) filters, assembled to optical detection device (10) by autoluminescence lens combination (9), the testing result input is detected control to optical detection device (10) and handle signal acquisition process unit (1); The examined control of pulsed light generation unit (2) and signal acquisition process unit (1) control; The examined control of constant temperature oven (6) temperature and signal acquisition process unit (1) control.
5, the non-contact detection device of the LED characteristics of luminescence according to claim 4 is characterized in that: pulsed light generation unit (2) can adopt light-pulse generator, perhaps, adopts the light-emitting device that is made of constant light source and chopping the light device.
6, the non-contact detection device of the LED characteristics of luminescence according to claim 5 is characterized in that: described chopping the light device can adopt chopper or shutter.
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| CNA2009101039686A CN101561475A (en) | 2009-05-27 | 2009-05-27 | Method and device for non-contact detection of LED luminescence properties |
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| CNA2009101039686A CN101561475A (en) | 2009-05-27 | 2009-05-27 | Method and device for non-contact detection of LED luminescence properties |
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Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102214741A (en) * | 2011-06-01 | 2011-10-12 | 湘能华磊光电股份有限公司 | Method for correcting LED (light emitting diode) crystal grain production facility |
| EP2546634A1 (en) * | 2011-07-14 | 2013-01-16 | Dainippon Screen Mfg., Co., Ltd. | Inspection apparatus and inspection method |
| CN103713253A (en) * | 2014-01-07 | 2014-04-09 | 武汉纺织大学 | System and method for online detection of illumination, chrominance and junction temperature decay characteristics of LED |
| CN104697671A (en) * | 2015-03-16 | 2015-06-10 | 东南大学 | Measuring device and measuring method of response time of temperature sensor |
| CN104867843A (en) * | 2015-04-30 | 2015-08-26 | 苏州承乐电子科技有限公司 | Detection device for LED luminous chip |
| CN105203305A (en) * | 2015-11-03 | 2015-12-30 | 山东华光光电子有限公司 | Nondestructive wavelength classifying and screening method for semiconductor laser |
| US9239157B2 (en) | 2010-08-26 | 2016-01-19 | Rasit Özgüc | Light-emitting means, in particular for operation in lampholders for fluorescent lamps |
| CN105457909A (en) * | 2015-12-09 | 2016-04-06 | 广州市鸿利光电股份有限公司 | LED light splitting method |
| CN109490750A (en) * | 2018-09-30 | 2019-03-19 | 广州市鸿利秉光电科技有限公司 | A kind of instrument and method detecting LED chip |
| CN112858864A (en) * | 2021-01-18 | 2021-05-28 | 厦门大学 | Device and method for carrying out non-contact photoelectric detection on LED chip |
| CN112885732A (en) * | 2021-03-02 | 2021-06-01 | 深圳鹏瑞智能科技有限公司 | Multi-environment contrast type Micro LED epitaxial wafer defect measuring method |
| TWI759866B (en) * | 2020-06-19 | 2022-04-01 | 財團法人工業技術研究院 | Inspection apparatus and inspection method for inspecting light-emitting diodes |
| WO2022193348A1 (en) * | 2021-03-19 | 2022-09-22 | 武汉精测电子集团股份有限公司 | Microled or minled defect detection method and device |
| US11474144B2 (en) | 2018-12-21 | 2022-10-18 | Industrial Technology Research Institute | Method for inspecting light-emitting diodes and inspection apparatus |
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2009
- 2009-05-27 CN CNA2009101039686A patent/CN101561475A/en active Pending
Cited By (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9239157B2 (en) | 2010-08-26 | 2016-01-19 | Rasit Özgüc | Light-emitting means, in particular for operation in lampholders for fluorescent lamps |
| CN102214741B (en) * | 2011-06-01 | 2012-12-05 | 湘能华磊光电股份有限公司 | Method for correcting LED (light emitting diode) crystal grain production facility |
| CN102214741A (en) * | 2011-06-01 | 2011-10-12 | 湘能华磊光电股份有限公司 | Method for correcting LED (light emitting diode) crystal grain production facility |
| EP2546634A1 (en) * | 2011-07-14 | 2013-01-16 | Dainippon Screen Mfg., Co., Ltd. | Inspection apparatus and inspection method |
| US8872114B2 (en) | 2011-07-14 | 2014-10-28 | Dainippon Screen Mfg. Co., Ltd. | Inspection apparatus and inspection method |
| CN103713253A (en) * | 2014-01-07 | 2014-04-09 | 武汉纺织大学 | System and method for online detection of illumination, chrominance and junction temperature decay characteristics of LED |
| CN103713253B (en) * | 2014-01-07 | 2016-08-17 | 武汉纺织大学 | Illuminance, colourity, the detection method of junction temperature decay characteristic in LED |
| CN104697671A (en) * | 2015-03-16 | 2015-06-10 | 东南大学 | Measuring device and measuring method of response time of temperature sensor |
| CN104867843A (en) * | 2015-04-30 | 2015-08-26 | 苏州承乐电子科技有限公司 | Detection device for LED luminous chip |
| CN105203305A (en) * | 2015-11-03 | 2015-12-30 | 山东华光光电子有限公司 | Nondestructive wavelength classifying and screening method for semiconductor laser |
| CN105457909A (en) * | 2015-12-09 | 2016-04-06 | 广州市鸿利光电股份有限公司 | LED light splitting method |
| CN109490750A (en) * | 2018-09-30 | 2019-03-19 | 广州市鸿利秉光电科技有限公司 | A kind of instrument and method detecting LED chip |
| CN109490750B (en) * | 2018-09-30 | 2021-11-16 | 广州市鸿利秉一光电科技有限公司 | Instrument and method for detecting LED chip |
| US11474144B2 (en) | 2018-12-21 | 2022-10-18 | Industrial Technology Research Institute | Method for inspecting light-emitting diodes and inspection apparatus |
| TWI759866B (en) * | 2020-06-19 | 2022-04-01 | 財團法人工業技術研究院 | Inspection apparatus and inspection method for inspecting light-emitting diodes |
| CN112858864A (en) * | 2021-01-18 | 2021-05-28 | 厦门大学 | Device and method for carrying out non-contact photoelectric detection on LED chip |
| CN112858864B (en) * | 2021-01-18 | 2022-02-18 | 厦门大学 | Device and method for carrying out non-contact photoelectric detection on LED chip |
| CN112885732A (en) * | 2021-03-02 | 2021-06-01 | 深圳鹏瑞智能科技有限公司 | Multi-environment contrast type Micro LED epitaxial wafer defect measuring method |
| CN112885732B (en) * | 2021-03-02 | 2023-09-22 | 深圳鹏瑞智能科技股份有限公司 | Multi-environment-contrast Micro LED epitaxial wafer flaw measurement method |
| WO2022193348A1 (en) * | 2021-03-19 | 2022-09-22 | 武汉精测电子集团股份有限公司 | Microled or minled defect detection method and device |
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Open date: 20091021 |