CN101560652B - Plasma assistant chemical vapor deposition device - Google Patents
Plasma assistant chemical vapor deposition device Download PDFInfo
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- CN101560652B CN101560652B CN2008100667537A CN200810066753A CN101560652B CN 101560652 B CN101560652 B CN 101560652B CN 2008100667537 A CN2008100667537 A CN 2008100667537A CN 200810066753 A CN200810066753 A CN 200810066753A CN 101560652 B CN101560652 B CN 101560652B
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- lead plate
- battery lead
- patterns
- plasma
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Abstract
The invention provides a plasma assistant chemical vapor deposition device which comprises a first electrode plate and a second electrode plate which is arranged relative to first electrode plate with an interval. The surface of the first electrode plate adjacent to the second electrode plate is provided with a plurality of first patterns preventing sticky films. The plurality of first patterns comprise protuberances facing to the second electrode plate. The surface of the second electrode plate adjacent to the first electrode plate is provided with a plurality of second patterns including protuberances or depressions. The protuberances of the plurality of first patterns are matched in an alternate manner with the protuberances or depressions of the plurality of second patterns so as to obtain consistent electric field distribution with the first electrode plate.
Description
Technical field
The present invention relates to a kind of plasma assistant chemical vapor deposition device.
Background technology
Thin film deposition (Thin Film Deposition) method is the method for general reference at substrate surface growth one deck homogeneity or dissimilar materials film.According to the mechanism that whether comprises chemical reaction in the film deposition process, Film forming method can be divided into: physical vapor deposition (Physical Vapor Deposition, PVD) method and chemical vapour deposition (ChemicalVapor Deposition, CVD) method two classes.Along with the difference of deposition technique and deposition parameter, the structure of institute's deposit film may be monocrystalline, polycrystalline or amorphous structure.
(Chemical Vapor Deposition, CVD) method is to make gas via the method for chemical reaction at substrate surface growth film in chemical vapour deposition.Often the chemical gaseous phase depositing process that uses has: atmospheric pressure chemical vapour deposition (Atmospheric Pressure ChemicalVapor Deposition, APCVD) method, low-pressure chemical vapor deposition (Low PressureChemical Vapor Deposition, LPCVD) method and plasma-assisted chemical vapour deposition (Plasma Enhanced Chemical Vapor Deposition, PECVD) method.Typical chemical gas-phase deposition system mainly is partly to be made of gas delivery, sediment chamber, pressure-controlling etc.
The significant parameter that influences the chemical vapour deposition manufacturing process has substrate temperature, auxiliary energy, gaseous tension, gas flow etc.Because temperature is the significant parameter that influences the chemical vapour deposition manufacturing process, so need the auxiliary energy controlled temperature.Wherein, plasma-assisted chemical vapour deposition is to utilize isoionic energy, makes the temperature of sedimentation chemistry reaction reduce.Owing to isoionic effect has emission of light, therefore, the plasma-assisted chemical vapour deposition system is also referred to as glow discharge (GloWDischarge) system in chemical Vapor deposition process.
Plasma existing the 4th kind of state that be material outside solid-state, liquid, gaseous state.The material of this state is a kind of part that is made of positive charge, negative charge and neutral particle gas (Partially Ionized Gas) that dissociates.Neutral particle gas should be done uniform distribution under equilibrium state, but plasma is often because of different electrical characteristic keep among a small circle cluster state, and therefore making everywhere, concentration has the inequality of locality.
Seeing also Fig. 1, is a kind of structural representation of prior art plasma assistant chemical vapor deposition device.This plasma assistant chemical vapor deposition device 1 comprises a sediment chamber 11, one first battery lead plate 12, one second battery lead plate 13 and a radio circuit 14.This sediment chamber 11 comprises an inlet mouth 111 and a venting port 112.This first battery lead plate 12 and this second battery lead plate 13 are arranged in this sediment chamber 11, and the relative spacing setting.Between this first battery lead plate 12 and this second battery lead plate 13 is plasma main body 15.The surface of these first battery lead plate, 12 contiguous these plasma main bodys 15 is a plane, and the surface of these second battery lead plate, 13 contiguous these plasma main bodys 15 also is a plane.This radio circuit 14 is connected between this first battery lead plate 12 and this second battery lead plate 13, and it provides enough energy for this plasma assistant chemical vapor deposition device 1.
When deposit film, a substrate 16 is arranged on this first battery lead plate 12.11 inlet mouth 111 imports from the sediment chamber for a certain amount of reactant gases and inert diluent gas, this reactant gases and inert diluent gas constitute main air stream, reactant gases atom in the main air stream or molecule move and arrive this substrate 16 surfaces toward internal diffusion, the reactant gases atom is attracted to the surface of this substrate 16, reactant gases atom after the absorption is at these substrate 16 surface transports, and the needed surface chemical reaction of generation film growth.The gaseous state resultant that surface chemical reaction produced is separated by suction, with main air stream from the sediment chamber 11 venting port 112 discharge.
Yet, the surface of first battery lead plate 12 of this plasma assistant chemical vapor deposition 1 and second battery lead plate, 13 contiguous these plasma main bodys 15 is the plane, the heat that first battery lead plate 12 produces under operational stage can have influence on the temperature of this substrate 16, and this substrate 16 is big with these first battery lead plate, 12 contacts area, the temperature of this substrate 16 is uncontrollable, cause the local temperature difference of this substrate 16, so can make the not good phenomenon of these substrate 16 surperficial institute deposit film homogeneities serious.Along with the size of this substrate 16 is increasing, easy more generation bonding die and institute's deposit film phenomenon in uneven thickness.
Summary of the invention
In order to solve the problem that bonding die, deposit film uneven thickness easily take place the prior art plasma assistant chemical vapor deposition device, be necessary to provide a kind of difficult generation bonding die, deposit film thickness plasma assistant chemical vapor deposition device uniformly.
A kind of plasma assistant chemical vapor deposition device, it comprises one first battery lead plate and one and one second battery lead plate that is provided with of this first battery lead plate relative spacing.The surface of contiguous this second battery lead plate of this first battery lead plate is provided with a plurality of first patterns that prevent bonding die, these a plurality of first patterns comprise towards the projection of second battery lead plate, the surface of contiguous this first battery lead plate of this second battery lead plate is provided with a plurality of second patterns, these a plurality of second patterns comprise projection or depression, and the projection of these a plurality of first patterns is staggered one by one cooperations with the projection or the depression of these a plurality of second patterns.
A kind of plasma assistant chemical vapor deposition device, it comprises one first battery lead plate, one and this first battery lead plate relative spacing second battery lead plate and the plasma main body that are provided with.This plasma main body is clipped between this first battery lead plate and this second battery lead plate, the surface of contiguous this plasma main body of this first battery lead plate is provided with a plurality of first patterns, these a plurality of first patterns comprise a plurality of projections, the surface of contiguous this first battery lead plate of this second battery lead plate is provided with a plurality of second patterns, these a plurality of second patterns comprise depression, the projection of these a plurality of first patterns and the depression of these a plurality of second patterns are one by one over against cooperating, and both are projected as circle, two round diameter differences.
Compared to prior art, first battery lead plate of plasma assistant chemical vapor deposition device of the present invention and second battery lead plate are provided with a plurality of first patterns and a plurality of second pattern respectively, these a plurality of first patterns are to this plasma main body projection, make that this substrate and this first battery lead plate contact area are little, moreover, the projection of the projection of these a plurality of first patterns and these a plurality of second patterns or depression are staggeredly one by one to cooperate that can to overcome the caused electric field density of this first pattern projection excessive and cause the problem of electrically charged particle set, so can effectively overcome the bad phenomenon of bonding die, so make that the homogeneity of this substrate surface institute deposit film is preferable.
Description of drawings
Fig. 1 is a kind of structural representation of prior art plasma assistant chemical vapor deposition device.
Fig. 2 is the structural representation of plasma assistant chemical vapor deposition device first embodiment of the present invention.
Fig. 3 is the floor map of second battery lead plate shown in Figure 2.
Fig. 4 is the floor map that local electric field strength distributes between first battery lead plate shown in Figure 2 and second battery lead plate.
Fig. 5 is the side partial schematic diagram of plasma assistant chemical vapor deposition device second embodiment of the present invention.
Fig. 6 is the floor map that local electric field strength distributes between first battery lead plate shown in Figure 5 and second battery lead plate.
Fig. 7 is the side partial schematic diagram of plasma assistant chemical vapor deposition device the 3rd embodiment of the present invention.
Fig. 8 is the side partial schematic diagram of plasma assistant chemical vapor deposition device the 4th embodiment of the present invention.
Embodiment
Seeing also Fig. 2, is the structural representation of plasma assistant chemical vapor deposition device first embodiment of the present invention.This plasma assistant chemical vapor deposition device 2 comprises that a sediment chamber 21, one first battery lead plate 22, one second battery lead plate 23, a radio circuit 24 and are clipped in the plasma main body 25 between this first battery lead plate 22 and this second battery lead plate 23.
This sediment chamber 21 comprises an inlet mouth 211 and a venting port 212.Water intaking is square to being the x direction of principal axis, and vertical direction is the y direction of principal axis.This inlet mouth 211 is oppositely arranged along being parallel to the y direction of principal axis with this venting port 212.The chamber wall material of this sediment chamber 21 is aluminium or glass.
This first battery lead plate 22 and this second battery lead plate 23 are arranged in this sediment chamber 21, and along being parallel to the setting of x direction of principal axis relative spacing.The material of this first battery lead plate 22 and this second battery lead plate 23 is an aluminium.
These first battery lead plate, 22 contiguous these venting ports 212 are provided with, and the surface of its contiguous this plasma main body 25 is provided with a plurality of first patterns 221.These a plurality of first patterns 221 comprise a plurality of projections, and each projection forms a raised face (RF) 223, and this raised face (RF) 223 is a smooth surface.These a plurality of first patterns 221 are projected as circle, and are the dot matrix distribution, as shown in Figure 3.Wherein, the diameter of this first pattern 221 can be 3mm, and one first interval, 222 equal in length between adjacent two first patterns 221 are 5mm arbitrarily.These second battery lead plate, 23 contiguous these inlet mouths 211 are provided with.The surface of these second battery lead plate, 23 contiguous these plasma main bodys 25 is a plane.
This radio circuit 24 is connected between this first battery lead plate 22 and this second battery lead plate 23, and it provides enough energy for this plasma assistant chemical vapor deposition device 2.The frequency of this radio circuit 24 is 13.56MHz.
When using this plasma assistant chemical vapor deposition device 2 at a substrate 26 surface deposition films, with these substrate 26 folded surfaces that are located at this first battery lead plate 22, and feed rare gas element as the temperature pilot-gas in this first interval 222, He gas for example is to control the temperature of this substrate 26.
Seeing also Fig. 4, is the floor map that local electric field strength distributes between first battery lead plate shown in Figure 2 and second battery lead plate.Regional A between any two first patterns 221 of this this first battery lead plate 22, its strength of electric field is less, shown in Fig. 4 dotted ellipse.Any four first area B that pattern 221 surrounds of this first battery lead plate 22, its strength of electric field is also less, shown in Fig. 4 broken circle.Regional strength of electric field near these a plurality of first patterns 221 is more intense.Because electric density is directly proportional with curvature, a plurality of first patterns 221 of this first battery lead plate 22 comprise a plurality of projections, and its raised face (RF) 223 is smooth surfaces, and it is more to assemble electric charge, and electric density is bigger.The surface of these second battery lead plate, 23 contiguous these plasma main bodys 25 is the plane.So between this first battery lead plate 22 and this second battery lead plate 23 electric-field intensity distribution as shown in Figure 4, the strength of electric field of regional A a little less than, the strength of electric field of area B also a little less than.
Compared to prior art, because this first battery lead plate 22 is provided with a plurality of first patterns 221, these a plurality of first patterns 221 comprise a plurality of projections to this plasma main body 25, and the raised face (RF) 223 of each projection is a smooth surface.So this substrate 26 not exclusively contacts with the surface of this first battery lead plate 22, promptly the surface of these substrate 26 contiguous these first battery lead plates 22 contacts with the raised face (RF) 223 of a plurality of projections of this first battery lead plate 22.So this substrate 26 is little with the contact area of this first battery lead plate 22, overcome owing to produce the bad phenomenon that static charge causes bonding die behind the plasma bombardment.
Secondly, feed rare gas element as the temperature pilot-gas in this first interval 222, not only further effectively overcome the bad phenomenon of bonding die, and the bulk temperature of this substrate 26 can control effectively and reach consistent, thus make these substrate 26 surfaces sedimentary film thicknesses more even.
Seeing also Fig. 5, is the side partial schematic diagram of plasma assistant chemical vapor deposition device second embodiment of the present invention.This plasma assistant chemical vapor deposition device 3 and these plasma assistant chemical vapor deposition device 2 structural similitudies, the main difference part is: the surface of its second battery lead plate, 33 contiguous these plasma main bodys 35 is provided with a plurality of second patterns 331.These a plurality of second patterns 331 also are dot matrix and distribute.These a plurality of second patterns 331 comprise a plurality of depressions, and each depression comprises a concave face 333, and this concave face 333 is a smooth surface.This concave face 333 is identical with a plurality of raised face (RF)s 323 curvature of this first battery lead plate 32.Second of adjacent two second patterns 331 interval 332 equates arbitrarily.The length at this second interval 332 is 5mm.
A plurality of first patterns 321 of this first battery lead plate 32 interlock at this parallel y direction of principal axis with a plurality of second patterns 331 of this second battery lead plate 33 and cooperate.Also promptly any one first pattern 321 of this first battery lead plate 32 parallel y direction of principal axis over against one second at interval 332, any one first at interval 322 at the y direction of principal axis over against one second pattern 331.
Seeing also Fig. 6, is the floor map that local electric field strength distributes between first battery lead plate shown in Figure 5 and second battery lead plate.The synoptic diagram of this electric-field intensity distribution part plan and the first embodiment electric-field intensity distribution key distinction shown in Figure 4 are: the zone C between any two first patterns 321 of this first battery lead plate 32, shown in Fig. 6 dotted ellipse, its strength of electric field is bigger.The region D that any 4 first patterns 321 of this first battery lead plate 32 surround, shown in Fig. 4 broken circle, its strength of electric field is also bigger.Because the zone C of this first battery lead plate 32 is one second patterns 331 over against the part of this second battery lead plate 33, shown in broken circle among Fig. 6, this second pattern 331 is depressions, and concave face 333 is smooth surfaces, and it is more to assemble electric charge, and electric density is bigger.So relative this first embodiment of electric-field intensity distribution between this first battery lead plate 32 and this second battery lead plate 33, the strength of electric field of zone C is stronger, and the strength of electric field of region D is also stronger.
Plasma assistant chemical vapor deposition device compared to first embodiment of the invention, the plasma assistant chemical vapor deposition device of second embodiment of the invention not only can effectively overcome owing to generation static charge behind the plasma bombardment causes the bad phenomenon of bonding die, but also can make these substrate 36 surperficial institute deposit films more even.Because the surface of these first battery lead plate, 32 contiguous these plasma main bodys 35 is provided with a plurality of first patterns 321, and these a plurality of first patterns 321 comprise a plurality of projections.So this substrate 36 is little with the contact area of this first battery lead plate 32, can overcome the bad phenomenon of bonding die.Secondly, feed rare gas element as the temperature pilot-gas in this first interval 322, can more effectively overcome the bad phenomenon of bonding die and make that these substrate 36 surface deposition films are more even.
And this first battery lead plate 32 is provided with identical and staggered a plurality of first patterns 321 and a plurality of second patterns 331 of curvature respectively with this second battery lead plate 33.The zone C of this first battery lead plate 32 and region D electric-field intensity distribution are stronger, and be also consistent.Weak regional less of strength of electric field.Plasma distribution is more consistent, so the uniformity of film of these substrate 36 surface depositions is preferable.
Seeing also Fig. 7, is the side partial schematic diagram of plasma assistant chemical vapor deposition device the 3rd embodiment of the present invention.This plasma assistant chemical vapor deposition device 4 and these plasma assistant chemical vapor deposition device 3 structural similitudies, the main difference part is: a plurality of second patterns 431 that the surface of its second battery lead plate, 43 contiguous plasma main bodys 45 is provided with comprise a plurality of projections.A plurality of first patterns 421 of first battery lead plate 42 and a plurality of 431 staggered cooperations of second pattern.Promptly one first pattern 421 of this first battery lead plate 42 is positioned at one second at interval 432 of this second battery lead plate 43 at parallel y direction of principal axis over against one; One first at interval 422 at parallel y direction of principal axis over against one second pattern 431.These a plurality of first patterns 421 are identical with these a plurality of second pattern, 431 shapes.
Seeing also Fig. 8, is the side partial schematic diagram of plasma assistant chemical vapor deposition device the 4th embodiment of the present invention.This plasma assistant chemical vapor deposition device 5 and these plasma assistant chemical vapor deposition device 3 structural similitudies, the main difference part is: the diameter of a plurality of second patterns 531 of its second battery lead plate 53 is 5mm, the length at second interval 522 is 3mm.Promptly the diameter of this second pattern 531 is than the big 2mm of diameter of first pattern 521.A plurality of first patterns 521 of first battery lead plate 52 and these a plurality of second patterns 531 are over against cooperating.Promptly one first pattern 521 of this first battery lead plate 52 at parallel y direction of principal axis over against one second pattern 531 that is positioned at this second battery lead plate 53; One first at interval 522 at parallel y direction of principal axis over against one second at interval 532.
Claims (9)
1. plasma assistant chemical vapor deposition device, it comprises: one first battery lead plate and one and one second battery lead plate that is provided with of this first battery lead plate relative spacing, it is characterized in that: the surface of contiguous this second battery lead plate of this first battery lead plate is provided with a plurality of first patterns that prevent bonding die, these a plurality of first patterns comprise towards the projection of second battery lead plate, the surface of contiguous this first battery lead plate of this second battery lead plate is provided with a plurality of second patterns, these a plurality of second patterns comprise projection or depression, and the projection of these a plurality of first patterns is staggered one by one cooperations with the projection or the depression of these a plurality of second patterns.
2. plasma assistant chemical vapor deposition device as claimed in claim 1 is characterized in that: these a plurality of first patterns all are the dot matrix distribution with these a plurality of second patterns and it is projected as circle.
3. plasma assistant chemical vapor deposition device as claimed in claim 1, it also comprises a sediment chamber and a plasma main body, this first battery lead plate and this second battery lead plate are arranged in this sediment chamber, and this plasma main body is between this first battery lead plate and this second battery lead plate.
4. plasma assistant chemical vapor deposition device as claimed in claim 3 is characterized in that: these a plurality of projections comprise a plurality of raised face (RF)s, and these a plurality of raised face (RF)s are smooth surface.
5. plasma assistant chemical vapor deposition device as claimed in claim 4, it is characterized in that: this sediment chamber comprises an inlet mouth and a venting port, this inlet mouth and this venting port are oppositely arranged, contiguous this venting port of this first battery lead plate, contiguous this inlet mouth of this second battery lead plate, these a plurality of second patterns comprise a plurality of depressions towards this inlet mouth direction, and these a plurality of depressions comprise a plurality of concave faces, and these a plurality of concave faces are smooth surface.
6. plasma assistant chemical vapor deposition device as claimed in claim 5 is characterized in that: these a plurality of concave faces are identical with these a plurality of raised face (RF) curvature.
7. plasma assistant chemical vapor deposition device as claimed in claim 3, it is characterized in that: these a plurality of projections comprise a plurality of raised face (RF)s, these a plurality of raised face (RF)s are smooth surface, and a plurality of raised face (RF)s of this first battery lead plate have identical curvature with a plurality of raised face (RF)s of this second battery lead plate.
8. plasma assistant chemical vapor deposition device, it comprises: one first battery lead plate, one second battery lead plate and a plasma main body that is provided with this first battery lead plate relative spacing, this plasma main body is clipped between this first battery lead plate and this second battery lead plate, it is characterized in that: the surface of contiguous this plasma main body of this first battery lead plate is provided with a plurality of first patterns, these a plurality of first patterns comprise a plurality of projections, the surface of contiguous this first battery lead plate of this second battery lead plate is provided with a plurality of second patterns, these a plurality of second patterns comprise depression, the projection of these a plurality of first patterns is one by one over against cooperating with the depression of these a plurality of second patterns, and both are projected as circle, two round diameter differences.
9. plasma assistant chemical vapor deposition device as claimed in claim 8, it is characterized in that: form one first between these adjacent two first patterns at interval, its length is 5mm, forms one second between these adjacent two second patterns at interval, and its length is 5mm or 3mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN2008100667537A CN101560652B (en) | 2008-04-18 | 2008-04-18 | Plasma assistant chemical vapor deposition device |
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| CN2008100667537A CN101560652B (en) | 2008-04-18 | 2008-04-18 | Plasma assistant chemical vapor deposition device |
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| CN101560652A CN101560652A (en) | 2009-10-21 |
| CN101560652B true CN101560652B (en) | 2011-04-27 |
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| CN2008100667537A Expired - Fee Related CN101560652B (en) | 2008-04-18 | 2008-04-18 | Plasma assistant chemical vapor deposition device |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104805417B (en) * | 2015-04-22 | 2017-01-25 | 电子科技大学 | Reaction chamber for PECVD (plasma enhance chemical vapor deposition) film deposition |
| CN107937886A (en) * | 2017-11-14 | 2018-04-20 | 武汉华星光电半导体显示技术有限公司 | Chemical vapor depsotition equipment and film build method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1198480A (en) * | 1997-04-02 | 1998-11-11 | 日本电气株式会社 | Plasma intensified chemical vapour deposition device and method for making said deposition |
| CN1501452A (en) * | 2002-11-13 | 2004-06-02 | ���ڻ���ʽ���� | Plasma machining apparatus |
| CN1531012A (en) * | 2003-03-10 | 2004-09-22 | ���������ƴ���ʽ���� | Plasma treating method and treater |
| CN1745463A (en) * | 2003-02-03 | 2006-03-08 | 日本奥特克株式会社 | Plasma processing apparatus, electrode plate for plasma processing apparatus, and electrode plate manufacturing method |
-
2008
- 2008-04-18 CN CN2008100667537A patent/CN101560652B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1198480A (en) * | 1997-04-02 | 1998-11-11 | 日本电气株式会社 | Plasma intensified chemical vapour deposition device and method for making said deposition |
| CN1501452A (en) * | 2002-11-13 | 2004-06-02 | ���ڻ���ʽ���� | Plasma machining apparatus |
| CN1745463A (en) * | 2003-02-03 | 2006-03-08 | 日本奥特克株式会社 | Plasma processing apparatus, electrode plate for plasma processing apparatus, and electrode plate manufacturing method |
| CN1531012A (en) * | 2003-03-10 | 2004-09-22 | ���������ƴ���ʽ���� | Plasma treating method and treater |
Non-Patent Citations (2)
| Title |
|---|
| JP特开2001-7087A 2001.01.12 |
| JP特开2007-123493A 2007.05.17 |
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