CN101546114B - Exposure system, light shield and method for designing same - Google Patents

Abstract

The invention discloses an exposure system, a light shield and a method for designing the same. The exposure system comprises a light source system and the light shield, wherein the light source system is used for generating an exposure light source, while the light shield uses a photonic crystal as a light shielding area of the light shield; and the ratio of the lattice constant of the photonic crystal to the wave length of the exposure light source is set in a photonic frequency slot of the photonic crystal, so that the exposure light source cannot transmit the light shielding area consisting of the photonic crystal. By applying the exposure system, the light shield and the method, the exposure light source can precisely transmit a transparent area of the light shield in photoetching technology, thus the light shield and the exposure system can effectively solve the problem of light diffraction effect in the photoetching technology without performing a high-cost OPC or other RET techniques any more.

Description

Exposure system, light shield and method for designing thereof

Technical field

The present invention relates generally to a kind of exposure system, light shield and method for designing thereof.

Background technology

Progress along with science and technology, the manufacturing technology of semiconductor subassembly is at a tremendous pace, wherein photoetching technique is being played the part of one of most important role, as long as about the definition on the figure (patterning), all need to use photoetching technique, and along with size of components continues to dwindle, photoetching technique has become the maximum bottleneck of semiconductor technology, if can't be broken through, the development of semi-conductor industry will be hindered.

According to Rayleigh (Rayleigh criterion), the minimum widith that optical system can be told (being equivalent to resolution), be directly proportional and be inversely proportional to numerical aperture (NA) with light wavelength (λ), therefore when the larger lens of the exposure source of use shorter wavelength or numerical aperture (NA), can improve resolution characteristic in theory, to obtain less live width, but must consider the depth of focus (Depth of Focus, DOF) problem that diminishes and other factor, resolution enhance technology (the Resolution Enhancement Technology that in photoetching process, commonly uses at present, RET), comprise off-axis illumination (Off-AxisIllumination, OAI), phase deviation light shield (Phase Shift Mask, and optical proximity correction art (Optical Proximity Correction, OPC) etc. PSM).

When the live width size is approached optical wavelength, light can produce diffraction effect (diffractioneffect) after passing light shield, the result of these diffraction light superpositions can with light shield on figure greatly differ from each other, figure after the exposure thereby serious distortion, and the OPC technology namely is that diffraction effect is taken into account, distortion with figure after the compensation exposure, by revising the figure on the light shield, make the diffraction light of generation behind superposition, can obtain figure and the live width of realistic requirement, yet the method can be with and serve shortcoming, for example make the complicacy multiplication of light shield, and then improved the cost of whole technique.

In addition, when coming 45 nanometers or trickleer technological development, adopt extreme ultraviolet linear light (EUV) as new light source, OPC or other RET technology although no longer need to arrange in pairs or groups, but it is with high costs in the light shield substrate of carrying out 40 layers of coating on glass with molybdenum and silicon, and the ability that can the light shield substrate reach zero-fault also is a test.

Comprehensively described, technical side's case of a kind of exposure system of current needs, light shield and light shield design.

Summary of the invention

Technical matters to be solved by this invention provides a kind of exposure system, light shield and method for designing thereof, by the shading region of photonic crystal as light shield, and the plural photon structure cell of arranging with the specific lattice shape, calculate frequently crack of its band structure and photon, and then calculate and analysis different crystalline lattice shape, frequency range and the polarised direction of the exposure light source that photonic crystal was suitable for of ratio and dielectric coefficient, in photoetching process, to allow exposure light source can accurately see through the photic zone of light shield, thereby the present invention's light shield and exposure system will no longer need to carry out expensive OPC or other RET technology, can effectively overcome the x-ray diffraction effect problem in the photoetching process.

In order to address the above problem, the invention provides a kind of light shield,

Described light shield comprises a shading region and the photic zone that a light source can't pass through, wherein this shading region comprises plural photon structure cell, the ratio of the wavelength of one of this plural number photon structure cell grating constant and this light source is a particular value, this particular value falls within the frequency crack of this plural number photon structure cell in this shading region, and this light source is with the direction perpendicular to this light shield, by the photic zone of this light shield.

Further, above-mentioned light shield can comprise that also described light source is a transverse electric field wave, and described particular value is 0.3301 to 0.4510.

Further, above-mentioned light shield can comprise that also described light source is a transverse electric field wave, and described particular value is 0.5455 to 0.5988.

Further, above-mentioned light shield can comprise that also described light source is a transverse magnetic field wave, and described particular value is 0.4212 to 0.4642.

Further, above-mentioned light shield can comprise that also each described photon structure cell has a sensitive surface, and a light source is by this sensitive surface incident, and this each photon structure cell comprises:

One first dielectric medium; And

One second dielectric medium, with described each the photon structure cell of the common formation of described the first dielectric medium, the lattice shape of described photon structure cell is a triangle, and described plural photon structure cell is arranged columned the second dielectric medium of formation plural number.

Further, above-mentioned light shield can comprise that also described light source is a transverse magnetic field wave, and described particular value is 0.3213 to 0.5049.

Further, above-mentioned light shield can comprise that also described particular value is 0.4207 to 0.4709.

The present invention also provides a kind of exposure system,

Described exposure system is used for a mask pattern is transferred to an assembly, and this exposure system comprises:

One light-source system is for generation of an exposure light source; And

One light shield, it comprises a photonic crystal, wherein the ratio of one of one of this photonic crystal grating constant and this exposure light source wavelength is to be set in the photon frequency crack of this photonic crystal, to form a shading region, wherein this light shield also comprises a photic zone, and this exposure light source is with the direction perpendicular to this light shield, by this photic zone of this light shield.

The present invention also provides a kind of light shield, comprises:

One light shield substrate, it has a surface;

One photic zone is arranged at described surface; And

One shading region is arranged at described surface, and wherein this shading region is to be arranged with a specific lattice shape by plural photon structure cell to form, and wherein a light source is with this surperficial direction perpendicular to this light shield substrate, by this photic zone of this light shield.

The present invention also provides a kind of mask manufacturing method,

Comprise the following step:

One light shield substrate is provided;

One of described light shield substrate surface is divided into a photic zone and a shading region;

Plural photon structure cell is set in described shading region, wherein this each photon structure cell has a specific lattice shape, and a light source is with this surperficial direction perpendicular to this light shield substrate, by this photic zone of this light shield.

Compared with prior art, use the present invention, by the shading region of photonic crystal as light shield, and the plural photon structure cell of arranging with the specific lattice shape, calculate frequently crack of its band structure and photon, and then calculate and analysis different crystalline lattice shape, frequency range and the polarised direction of the exposure light source that photonic crystal was suitable for of ratio and dielectric coefficient, in photoetching process, to allow exposure light source can accurately see through the photic zone of light shield, thereby the present invention's light shield and exposure system will no longer need to carry out expensive OPC or other RET technology, can effectively overcome the x-ray diffraction effect problem in the photoetching process.

Description of drawings

Fig. 1 is the synoptic diagram of the present invention's exposure system;

Fig. 2 (A) is the vertical view of an embodiment of the present invention's light shield;

Fig. 2 (B) is the part enlarged drawing of the shading region of Fig. 2 (A);

Fig. 2 (C) is the band structure figure of the photonic crystal of Fig. 2 (A);

Fig. 3 (A) is the vertical view of another embodiment of the present invention's light shield;

Fig. 3 (B) is the part enlarged drawing of the shading region of Fig. 3 (A);

Fig. 3 (C) is the band structure figure of the photonic crystal of Fig. 3 (A);

Fig. 4 (A) is the again vertical view of an embodiment of the present invention's light shield;

Fig. 4 (B) is the part enlarged drawing of the shading region of Fig. 4 (A);

Fig. 4 (C) is the band structure figure of the photonic crystal of Fig. 4 (A); And

Fig. 5 is the embodiment process flow diagram of the present invention's light shield method for designing.

Embodiment

The invention will be further described below in conjunction with the drawings and specific embodiments.

Please refer to Fig. 1, it is the synoptic diagram of the embodiment of the present invention's exposure system, this exposure system 1 is for a mask pattern 21 is transferred to an assembly 7, this exposure system 1 comprises a light-source system 4 and a light shield 2, light-source system 4 produces an exposure light source 40, and light shield 2 comprises a light shield substrate 20 and the mask pattern 21 that is arranged at the surface 200 of light shield substrate 20, this mask pattern 21 comprises a shading region 3 and a photic zone 6, wherein this shading region 3 is by being made of photonic crystal, and the grating constant of this photonic crystal (a) is to be set in the photon frequency crack of this photonic crystal with the ratio of the wavelength (λ) of this exposure light source 40, therefore this exposure light source 40 can't pass through this shading region 3, in this embodiment, this photonic crystal is a 2 D photon crystal, but also may be one dimension or three-D photon crystal in the practical application, as long as this photonic crystal has frequently crack of photon, can pass through the ratio of the wavelength (λ) of control lattice constant (a) and exposure light source 40, reach the purpose as the shading region 3 of light shield 2.

In above-mentioned embodiment, the shading region 3 that is consisted of by photonic crystal, it is the circuit pattern that is configured to form assembly 7 to be passed in this mask pattern 21, certainly also can be used as the part of NOT-circuit pattern, assembly 7 is generally the semiconductor assembly, for example an integrated circuit (IC) chip, in addition, exposure system 1 shown in Figure 1 only is a synoptic diagram, does not press actual ratio and draws, and omitted the equipment such as collector lens in the general exposure system or objective lens.

In above-mentioned embodiment, light-source system 4 is except the wavelength (λ) that can set exposure light source 40, the polarised direction of this exposure light source 40 of capable of regulating also, be a transverse electric field wave (TE wave) or a transverse magnetic field wave (TM wave), in a photoetching process of using exposure system 1, the selection of the wavelength of exposure light source 40 (λ) and polarised direction will be decided on the grating constant and the lattice shape ratio that consist of the photonic crystal of this shading region 3 in the light shield 2.

Then, the present invention will be having the photonic crystal of different dielectric material and lattice shape, as the embodiment of the shading region 3 of light shield 2.In following each embodiment, photonic crystal is to be arranged with a specific lattice shape by plural photon structure cell to form, it is vertical with the incident direction of a specific light source that this each photon structure cell has a sensitive surface, and this each photon structure cell comprises one first dielectric medium and one second dielectric medium, the grating constant of photonic crystal is a, and the specific inductive capacity of the first dielectric medium is ε ₁And the specific inductive capacity of the second dielectric medium is ε ₂, when the ratio of the wavelength X of this grating constant a and this specific light source was a particular value, this specific light source namely can't pass through this shading region 3.

Please refer to Fig. 2 (A) and Fig. 2 (B), it is the vertical view of an embodiment of the present invention's light shield, the sensitive surface of the light shield among Fig. 12 namely, light shield 2 comprises photic zone 6 and shading region 3, wherein this shading region 3 is with the lattice arrangement of square shape and form a cylinder system by plural photon structure cell 30, Fig. 2 (B) is the part enlarged drawing of the shading region 3 of Fig. 2 (A), comprise altogether 9 photon structure cells 30, the sensitive surface of each photon structure cell 30 is vertical with the incident direction of this specific light source, and comprise one first dielectric medium 301 and one second dielectric medium 302, this first dielectric medium 301 is a right cylinder, and the second dielectric medium 302 is around this first dielectric medium 301 to form sensitive surface as foursquare each photon structure cell 30, the length of side of supposing each tetragonal is a, the a grating constant of the photonic crystal that plural photon structure cell 30 formed of namely serving as reasons then, the end face radius of right cylinder is r _aUtilize Maxwell equation (Maxwell ' s Equations) arrangement to draw the wave equation in electric field (E) and magnetic field (H), and in conjunction with Bloch theorem, just can try to achieve the photon band diagram (photonic frequency band diagram) of photonic crystal after as calculated with plane wave expansion method (Plane Wave Expansion Method), calculating formula is as follows:

$\frac{1}{\mathrm{\ϵ}\stackrel{\→}{\left(G\right)}}=\underset{\stackrel{\→}{G}}{\mathrm{\Σ}}\mathrm{\κ}\left(\stackrel{\→}{G}\right)e^{i\stackrel{\→}{G}\·\stackrel{\→}{r}}$

$\mathrm{\κ}\left(\stackrel{\→}{G}\right)=2f(\frac{1}{{\mathrm{\ϵ}}_1}-\frac{1}{{\mathrm{\ϵ}}_2})\frac{J_1\left({\mathrm{Gr}}_a\right)}{{\mathrm{Gr}}_a},$ for?G≠0

$\mathrm{\κ}\left(\stackrel{\→}{G}\right)=\frac{f}{{\mathrm{\ϵ}}_1}-\frac{1-f}{{\mathrm{\ϵ}}_2},$ for?G＝0

Wherein $f=\frac{{\mathrm{\πr}}_a^2}{V_0},$ V ₀＝a ²

G: the vector of falling the lattice (reciprocal lattice vector)

F: volume fraction (volume fraction)

Structure factor (structure factor)

In the following formula of upper formulation substitution:

$-\frac{1}{\mathrm{\ϵ}\left(\stackrel{\→}{r_{//}}\right)}(\frac{{\∂}^2}{{\∂x}^2}+\frac{{\∂}^2}{{\∂y}^2})E_z\left(\stackrel{\→}{r_{//}}\right)=\frac{{\mathrm{\ω}}^2}{c^2}{E}_z\left(\stackrel{\→}{r_{//}}\right)$

$-(\frac{\∂}{\∂x}\frac{1}{\mathrm{\ϵ}\left(\stackrel{\→}{r_{//}}\right)}\frac{\∂}{\∂x}+\frac{\∂}{\∂y}\frac{1}{\mathrm{\ϵ}\left(\stackrel{\→}{r_{//}}\right)}\frac{\∂}{\∂y})H_z\left(\stackrel{\→}{r_{//}}\right)=\frac{{\mathrm{\ω}}^2}{c^2}{H}_z\left(\stackrel{\→}{r_{//}}\right)$

ω: frequency

C: the light velocity

K: wave vector

E: electric field

H: magnetic field

When defining tetragonal constant a and right cylinder end face radius r _aRatio, and with DIELECTRIC CONSTANT ε ₁And ε ₂The value substitution time, utilize above-mentioned principle and formula can obtain the band structure figure of photonic crystal; Therefore, the present invention works as DIELECTRIC CONSTANT ε in the embodiment of Fig. 2 (A) and Fig. 2 (B) ₁Be 8.9, DIELECTRIC CONSTANT ε ₂Be 1.0, and r _aDuring for 0.2a, can obtain Fig. 2 (C), be the photonic crystal that consisted of of plural photon structure cell 30 the photon band diagram with and to a photon of TE ripple zone, crack frequently, therefore, in above-mentioned embodiment, when the ratio of the wavelength X of the grating constant a of photon structure cell 30 and a TE ripple was between 0.3301 to 0.4510, this TE ripple just can't be by the shading region 3 that is comprised of this plural number photon structure cell 30.

Please refer to Fig. 3 (A), it is the vertical view of another embodiment of the present invention's light shield, light shield 2 comprises photic zone 6 and shading region 3, Fig. 3 (B) then is the part enlarged drawing of the shading region 3 of Fig. 3 (A), in this embodiment, a check shape system is arranged and formed to this shading region 3 by plural photon structure cell 30 with tetragonal lattice.This each photon structure cell 30 knows that sensitive surface is a rectangle, and comprise one first dielectric medium 301 and one second dielectric medium 302, wherein this second dielectric medium 302 is a rectangle, its long for b, wide be a (namely for this reason the photonic crystal lattice constant in the embodiment), and this first dielectric medium 301 is four rectangular parallelepipeds, and around this second dielectric medium 302 to form sensitive surface as each photon structure cell 30 of rectangle, the length of each photon structure cell 30 is d1, the wide d2 of being, utilize identical principle and account form, work as DIELECTRIC CONSTANT ε ₁Be 8.9, DIELECTRIC CONSTANT ε ₂Be 1.0, and d1=d2, a=b, during d2/a=2.85/2.5, can obtain the band structure figure such as Fig. 3 (C), and and then obtain the photon crack frequently of the photonic crystal of Fig. 3 (A), therefore, when this specific light source is a TE ripple, the ratio of the wavelength X of the grating constant a of photon structure cell 30 and this TE ripple is set between 0.5455 to 0.5988, this TE ripple namely can't be by the shading region 3 that is comprised of this plural number photon structure cell 30; And when this specific light source was a TM ripple, this particular value can be set between 0.4212 to 0.4642, and this TM ripple namely can't pass through shading region 3.

Please refer to Fig. 4 (A) and Fig. 4 (B), it is the again vertical view of an embodiment of the present invention's light shield, light shield 2 comprises photic zone 6 and shading region 3, wherein this shading region 3 is to arrange and form a cylinder system by plural photon structure cell 30 with triangular crystal lattice, Fig. 4 (B) then is the part enlarged drawing of the shading region 3 of Fig. 4 (A), in this embodiment, the sensitive surface of this each photon structure cell 30 is a triangle, and should will form columned the second dielectric medium 302 of plural number after 30 arrangements of plural number photon structure cell, the length of side of each triangular crystal lattice is a (namely for this reason the photonic crystal lattice constant in the embodiment), and the end face radius of right cylinder is r _a, in the photonic crystal of the cylinder system of this kind triangular crystal lattice formation, work as DIELECTRIC CONSTANT ε ₁Be 11.4, DIELECTRIC CONSTANT ε ₂Be 1.0, and r _a/ a is 0.45 o'clock, can obtain Fig. 4 (C) after as calculated, i.e. the band structure figure of the photonic crystal of Fig. 4 (A).

Please refer to Fig. 4 (C), the designed photonic crystal of above-mentioned embodiment has the zone, common photon frequency crack to TE ripple and TM ripple as can be known, therefore, when the ratio of the wavelength X of grating constant a and specific light source was set in 0.4207 to 0.4709, TE ripple and TM ripple all can't pass through plural photon structure cell 30; Larger for the photon frequency zone, crack of TM ripple again, therefore when this particular value was between 0.3213 to 0.5049, the TM ripple namely can't be by the shading region 3 that is comprised of this plural number photon structure cell 30.

In above-mentioned each embodiment, this second dielectric medium 302 is air, the material of this first dielectric medium 301 for having the nature lattice arrangement is the surface 200 that the first dielectric medium 301 periodically is arranged in the light shield substrate 20 of light shield 2 with cylindrical shape in Fig. 2 (A); In Fig. 3 (A), the first dielectric medium 301 periodically is arranged in the surface 200 of the light shield substrate 20 of light shield 2 with rectangular shape; In the embodiment of Fig. 4 (A), then be in DIELECTRIC CONSTANT ε ₁Be with perforation means air column to be set periodically in the first dielectric medium 301 of 11.4, to form columned the second dielectric medium 302 of plural number.

In above-mentioned each embodiment, the first dielectric medium 301 has the material of nature lattice arrangement for silicon or metal etc., and this second dielectric medium 302 is air, arrange with different crystalline lattice shape, ratio respectively and form and have the frequently photonic crystal in crack of photon, utilize the band structure figure of photonic crystal, set the ratio of the wavelength of grating constant and specific light source, and the polarised direction of specific light source, so that this specific light source can't pass through shading region 3.Yet it should be noted that in practical application, so long as two kinds of materials with differing dielectric constant have a photon frequently during the photonic crystal in crack through periodically arranging and forming, just can be used as the shading region 3 of the present invention's light shield 2.In addition, this specific light source mostly is ultraviolet beam in semiconductor technology now, and the present invention's light shield will can be applicable to use in the photoetching process of extreme ultraviolet linear light (EUV, wavelength are 13.4 nanometers).

Please refer to Fig. 5, it is the embodiment process flow diagram of the present invention's light shield method for designing, the method comprises provides a light shield substrate (step 51), this light shield substrate for example is a quartz glass, surface with this light shield substrate is divided into photic zone and shading region (step 52) again, namely pattern (Pattern) design to be transferred on the light shield of step 52, for example the circuit pattern to an IC chip to be transferred is designed to the part of shading region on the light shield, plural photon structure cell then is set in this shading region (step 53), wherein this each photon structure cell has a specific lattice shape, and this step namely is to use photonic crystal as the shading region of light shield when making light shield.

In the embodiment of above-mentioned light shield method for designing, the specific lattice shape of this each photon structure cell can be a square, a rectangle, and one is leg-of-mutton wherein arbitrary, also can be designed to other lattice shape.In addition, have a grating constant as the photonic crystal of shading region, during the crack, this specific light source namely can't pass through this shading region to the photon that falls within this photonic crystal when the ratio of the wavelength of this grating constant and a specific light source frequently.

Therefore, the present invention's mask manufacturing method can comprise the following step again: calculate a band structure of this plural number photon structure cell to obtain the photon frequency crack (step 50) of this plural number photon structure cell, this step can place step 51 to arbitrary step of step 53, that is to say, default photon crystal material and lattice arrangement mode, behind step 50 acquisition photon frequency zone, crack, can cooperate the predetermined optical source wavelength that uses in the photoetching process, calculate suitable grating constant to arrange this plural number photon structure cell in this shading region; But also can be first in practical application execution in step 51 to step 53, the first fixedly lattice shape of photonic crystal and grating constant, and after it was arranged in shading region, execution in step 50 was calculated frequently crack of band structures and photon again, to set the wavelength of specific light source in the light photoetching process.

The above; only for the better embodiment of the present invention, but protection scope of the present invention is not limited to this, anyly is familiar with the people of this technology in the disclosed technical scope of the present invention; the variation that can expect easily or replacement all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection domain of claim.

Claims (10)

1. a light shield is characterized in that,

Described light shield comprises a shading region and the photic zone that a light source can't pass through, wherein this shading region comprises plural photon structure cell, the ratio of the wavelength of one of this plural number photon structure cell grating constant and this light source is a particular value, this particular value falls within the frequency crack of this plural number photon structure cell in this shading region, each photon structure cell has a sensitive surface, and this sensitive surface is a rectangle or a triangle, this light source is with the direction perpendicular to this light shield, photic zone by this light shield, wherein this each photon structure cell comprises one first dielectric medium and one second dielectric medium, when this sensitive surface is rectangle, this first dielectric medium is four rectangular parallelepipeds, and center on this second dielectric medium to form this rectangle, and when this sensitive surface is triangle, in this first dielectric medium, with perforation means air column is set, to form a plurality of columned these second dielectric mediums.

2. light shield as claimed in claim 1 is characterized in that,

Described light source is a transverse electric field wave, and described particular value is 0.3301 to 0.4510.

3. light shield as claimed in claim 1 is characterized in that,

Described light source is a transverse electric field wave, and described particular value is 0.5455 to 0.5988.

4. light shield as claimed in claim 1 is characterized in that,

Described light source is a transverse magnetic field wave, and described particular value is 0.4212 to 0.4642.

5. light shield as claimed in claim 1 is characterized in that,

This light source is by this sensitive surface incident.

6. light shield as claimed in claim 5 is characterized in that,

Described light source is a transverse magnetic field wave, and described particular value is 0.3213 to 0.5049.

7. light shield as claimed in claim 5 is characterized in that,

Described particular value is 0.4207 to 0.4709.

8. an exposure system is characterized in that,

Described exposure system is used for a mask pattern is transferred to an assembly, and this exposure system comprises:

One light-source system is for generation of an exposure light source; And

One light shield, it comprises a photonic crystal, wherein the ratio of one of one of this photonic crystal grating constant and this exposure light source wavelength is to be set in the photon frequency crack of this photonic crystal, to form a shading region, wherein this light shield also comprises a photic zone, this photonic crystal has a sensitive surface, and this sensitive surface is a rectangle or a triangle, this photonic crystal comprises one first dielectric medium and one second dielectric medium, when this sensitive surface is rectangle, this first dielectric medium is four rectangular parallelepipeds, and around this second dielectric medium forming this rectangle, and when this sensitive surface is triangle, in this first dielectric medium, with perforation means air column is set, forming a plurality of columned these second dielectric mediums, and this exposure light source is perpendicular to the direction of this light shield, by this photic zone of this light shield.

9. a light shield is characterized in that,

Comprise:

It has a surface light shield substrate;

One photic zone is arranged at described surface; And

One shading region, be arranged at described surface, wherein this shading region is to be arranged with a specific lattice shape by plural photon structure cell to form, one light source is with this surperficial direction perpendicular to this light shield substrate, this photic zone by this light shield, this specific lattice is shaped as a rectangle or a triangle, this each photon structure cell comprises one first dielectric medium and one second dielectric medium, when this specific lattice is shaped as rectangle, this first dielectric medium is four rectangular parallelepipeds, and around this second dielectric medium forming this rectangle, and when this specific lattice is shaped as triangle, in this first dielectric medium, with perforation means air column is set, to form a plurality of columned these second dielectric mediums.

10. a mask manufacturing method is characterized in that,

Comprise the following step:

One light shield substrate is provided;

One of described light shield substrate surface is divided into a photic zone and a shading region;

Plural photon structure cell is set in described shading region, wherein this each photon structure cell has a specific lattice shape, and this specific lattice is shaped as a rectangle or a triangle, one light source is with this surperficial direction perpendicular to this light shield substrate, this photic zone by this light shield, this each light comprises one first dielectric medium and one second dielectric medium in structure cell, when this specific lattice is shaped as rectangle, this first dielectric medium is four rectangular parallelepipeds, and center on this second dielectric medium to form this rectangle, and when this specific lattice is shaped as triangle, in this first dielectric medium, with perforation means air column is set, to form a plurality of columned these second dielectric mediums.

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