CN101541906B - 多层膜的制造方法 - Google Patents

多层膜的制造方法 Download PDF

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CN101541906B
CN101541906B CN2008800002616A CN200880000261A CN101541906B CN 101541906 B CN101541906 B CN 101541906B CN 2008800002616 A CN2008800002616 A CN 2008800002616A CN 200880000261 A CN200880000261 A CN 200880000261A CN 101541906 B CN101541906 B CN 101541906B
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bonding film
support membrane
film
base material
interval
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CN101541906A (zh
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玉置刚士
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Lishennoco Co ltd
Resonac Corp
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Abstract

本发明提供一种多层膜的制造方法，该方法具备如下工序：将形成在临时基材上的粘接剂层进行剪切，以区分成以沿着临时基材的长度方向空出规定的间隔进行配置的用作粘接膜的多个部分和除此以外的部分的工序；将临时基材上的多个粘接膜，以沿着支撑膜的长度方向空出规定的间隔的方式转移到支撑膜上的工序。在临时基材上相邻的粘接膜的间隔，不同于在支撑膜上相邻的粘接膜的间隔。

Description

多层膜的制造方法
技术领域
本发明涉及具有设置在支撑膜上的多个粘接膜的多层膜的制造方法，进一步涉及具有设置在支撑膜上的多个粘接膜和粘合膜的多层膜的制造方法。 
背景技术
作为具有形成在支撑膜上的多个粘接膜和粘合膜的多层膜，例如有在支撑膜上形成有晶片接合用的粘接剂层和切割用的粘合剂层的晶片接合切割一体型膜。 
这样的多层膜可通过如下方法制造：例如，将具有支撑膜和以空出规定的间隔在该支撑膜上形成的粘接剂层的晶片接合膜，与具有基材膜和形成在该基材膜上的粘合剂层的切割膜，以使粘接剂层和粘合剂层为内侧的方式进行贴合(专利文献1)。 
专利文献1：日本特开2004-221336号公报 
发明内容
以空出规定的间隔的方式来配置的多个粘接剂层，可以通过暂时形成覆盖支撑膜单面的整个面的粘接剂层，然后，留下其中的一部分并除去不需要的部分的方法来形成，从生产效率等角度考虑，在工业上优选是采用这样的方法。 
但是，用以往的方法制造多层膜时，由于需要空出在最终制品中所必要的间隔来在支撑膜上形成粘接膜，因此，存在这样的问题，即，在粘接剂层中作为不需要部分而被废弃的部分的量有时会很多。尤其是，使用像晶片接合用的粘接膜这样高价的材料时，工业上强烈地需求减少作为不需要的部分而被废弃的部分的量，即使是少许也好。 
另外，用以往的方法制造多层膜时，由于需要在支撑膜上剪切粘接膜，因此存在如下问题，即，在剪切粘接膜时，在支撑膜的表面上产生沿着粘接膜的外周的剪切伤。如果存在剪切伤，则在该部分上容易附着膜尘等异物，因此，强烈地希望抑制剪切伤的产生。
因此，本发明的目的是提供一种方法，该方法在具有设置在支撑膜上的多个粘接膜的多层膜的制造中，可以以与最终制品中的间隔不同的任意设定的间隔或者不空出间隔的方式来有效地形成多个粘接膜，并可抑制支撑膜的表面中的剪切伤的产生。 
本发明涉及多层膜的制造方法，所述多层膜具备支撑膜、沿着支撑膜的长度方向在支撑膜上配置的多个粘接膜。本发明涉及的制造方法具备下述工序：将形成在临时基材上的粘接剂层进行剪切，以便区分成以沿着临时基材的长度方向空出规定的间隔或者不空出间隔的方式配置的用作粘接膜的多个部分和除此以外的部分的工序(A)；将临时基材上的粘接膜，以沿着支撑膜的长度方向空出规定的间隔的方式转移到支撑膜上的工序(B)。用作粘接膜的多个部分以沿着临时基材的长度方向空出规定间隔的方式进行配置时，在临时基材上相邻的粘接膜的间隔，不同于在支撑膜上相邻的粘接膜的间隔。 
上述本发明涉及的制造方法，将构成多层膜的多个粘接膜暂时形成在临时基材上，然后，将形成的粘接膜转移到支撑膜上。因而，可以以与最终制品的间隔不同的任意设定的间隔或者不空出间隔来配置的方式，形成粘接膜。 
另外，本发明涉及的制造方法，由于在临时基材上剪切粘接剂层，将形成的粘接膜转移到支撑膜上，因此，可以抑制支撑膜表面上的剪切伤的产生。 
本发明涉及的制造方法，可以在工序(A)和工序(B)之间，进一步具备：除去临时基材上的粘接剂层中的粘接膜以外的部分的一部分或全部，将粘接膜残留于临时基材上的工序(C)。这样，可以更容易地将临时基材上的粘接膜转移到支撑膜上。 
用作粘接膜的多个部分以沿着临时基材的长度方向空出规定的间隔的方式进行配置时，优选在临时基材上相邻的粘接膜的间隔，比在支撑膜上相邻的粘接膜的间隔狭窄。此时，以比最终制品中所必要的间隔狭窄的间隔来高密度配置的方式，在临时基材上形成粘接膜。结果，可减少作为不需要的部分而被除去的粘接剂层的量。 
上述多层膜还可进一步具备设置在粘接膜上的、具有从粘接膜的外周突出的突出部的粘合膜。此时，本发明涉及的制造方法，优选进一步具备：使粘接膜和粘合剂层进行贴合的工序(a)；对粘接膜上的粘合剂层进行剪切，以便 区分成用作粘合膜的多个部分和除此以外的部分的工序(b)；除去粘合剂层中的粘合膜以外的部分的一部分或全部，将粘合膜残留于粘接膜上的工序(c)。 
例如，通过贴合粘接膜和粘合剂层，使得沿着粘合剂层的长度方向，空出与在临时基材上相邻的粘接膜的间隔不同的规定的间隔，将临时基材上的多个粘接膜转移到粘合剂层上，然后，通过贴合粘合剂层上的粘接膜和支撑膜，可以使得以多个粘接膜贴合于粘合剂层的状态，沿着支撑膜的长度方向空出规定的间隔来转移到支撑膜上。此时，工序(a)包含于工序(B)，工序(b)和工序(c)成为工序(B)的后工序。另外，例如，可以将在工序(B)中转移到支撑膜上的粘接膜，以贴合于支撑膜上的状态，贴合于粘合剂层。此时，工序(a)、(b)、(c)是工序(B)的后工序。 
在具有上述粘合膜的多层膜的情形下，为了确保粘合膜的突出部的场所，有必要大幅度地扩大粘接膜彼此之间的间隔，但即使是在这样的情形下，根据本发明，也能够将作为不需要部分而被除去的粘接剂层的量维持在较少水平。 
在工序(c)中，优选对粘合剂层进行剪切，以便区分成用作粘合膜的多个部分、包围该部分中的每一个的部分和它们以外的部分，除去将粘合剂层中多个粘合膜的每一个进行包围的部分，在粘接膜上残留粘合膜。此时，在得到的多层膜中，露出支撑膜的部分形成在粘合膜的周围。这样，使用具有粘接膜和粘合膜的层叠体时，从支撑膜上剥离变得容易等，可改善多层膜的处理性。 
在本发明涉及的制造方法中，例如，粘接膜是晶片接合用的粘接膜，粘合膜可以是切割用粘合膜。 
本发明涉及的制造方法，可以进一步具备检查临时基材上的粘接膜的外观的工序。此时，例如，在临时基材上的多个粘接膜中仅使通过检查粘接膜的外观判断为合格品的粘接膜转移到支撑膜上，由此可以防止次品混入到最终制品中。 
根据本发明，在具有设置在支撑膜上的多个粘接膜的多层膜的制造中，可以以与最终制品的间隔不同的任意设定的间隔或者不空出间隔的方式，有效地形成多个粘接膜。结果，例如可以减少作为不需要的部分被除去的粘接剂层的量，实现废弃物的减少和制造成本的削减。另外，根据本发明，可以抑制支撑膜表面中的剪切伤的产生和由其所引起的膜尘等异物的残留。
附图说明
图1是表示多层膜的一个实施方式的平面图。 
图2是沿图1的II-II线的截面图。 
图3是表示切割半导体晶片的工序的截面图。 
图4是表示多层膜的制造方法的一个实施方式的示意图。 
图5是表示多层膜的制造方法的一个实施方式的示意图。 
图6是表示多层膜的制造方法的一个实施方式的示意图。 
图7是表示多层膜的制造方法的一个实施方式的示意图。 
图8是表示多层膜的制造方法的一个实施方式的示意图。 
符号说明 
1多层膜，3层叠体(晶片接合切割一体型膜)，5半导体晶片，7环状肋骨、9切割膜，10支撑膜，11临时基材，12基膜，13上膜，21粘接剂层，21a粘接膜，22粘合剂层，22A突出部，22a粘合膜，31，32切割机，40剥离板，50，51吸附垫，80***，90露出部 
具体实施方式
以下，对本发明的合适的实施方式，根据需要参照附图进行详细说明。图中，对于相同或同等的构成要素标记相同符号，适当地省略重复的说明。 
图1是表示多层膜的一个实施方式的平面图，图2是沿着图1的II-II线的截面图。图1、2所示的多层膜1含有长的支撑膜10、具有圆形的主面的多个粘接膜21a、在多个粘接膜21a的每一个的与支撑膜10相反侧的面上所层叠的粘合膜22a、覆盖粘合膜22a的基膜12a。 
粘接膜21a沿着支撑膜10的长度方向空出规定的间隔D2被配置在支撑膜10上。粘接膜21a是用于将半导体元件粘接于半导体元件搭载用基板上的晶片接合用的粘接膜。粘合膜22a和基膜12a具有圆形主面，该圆形主面具有比粘接膜21a的主面大的面积，粘合膜22a具有从粘接膜21a的主面的外周突出的环状的突出部22A。粘合膜22a是，在将半导体晶片利用切割制成单片时为了固定半导体晶片而使用的切割用的粘合膜。 
粘接膜21a、粘合膜22a和基膜12a依次进行层叠形成层叠结构，具有这种层叠结构的层叠体3，从支撑膜10上剥离，可以用作兼具晶片接合和切割 两种功能的晶片接合切割一体型膜。为了容易剥离层叠体3，而在层叠体3的周围设置露出支撑膜10的环状的露出部90。在比露出部90更外侧的部分的支撑膜10上，层叠粘合剂层的一部分22b和基膜12b。在图中为了简略化，以从支撑膜10上离开的状态来表示粘合膜22a的突出部22A，但是，突出部22A也通常是部分地与支撑膜10相接触的状态。 
图3是表示使用层叠体(晶片接合切割一体型膜)3切割半导体晶片的工序的一个实施方式的截面图。粘接膜21a被贴附于半导体晶片5上，同时，粘合膜22a的突出部22A贴附于以包围半导体晶片5的周围的形式设置的环状肋骨7上。利用突出部22A的粘合力对环状肋骨7固定晶片接合切割一体型膜3。在该状态下将半导体晶片5沿着图中的虚线A与粘接膜21a一起切割成格子状。切割后，根据需要利用光照射来减少粘合膜22a的粘合力，将单片化的半导体晶片(半导体芯片)与在其单面上粘贴的粘接膜21a一起取出。被取出的半导体芯片通过粘接膜21a被粘接在半导体搭载用基板上。 
图4、5是表示多层膜1的制造方法的一个实施方式。图4所示的实施方式涉及的制造方法，具备：对覆盖临时基材11的单面全面来形成的粘接剂层21进行剪切，以便区分成以沿着临时基材11的长度方向空出规定的间隔D1的方式进行配置的用作粘接膜21a的多个部分和除此以外的部分的工序；除去临时基材11上的粘接剂层21中的粘接膜21a以外的部分的工序；将临时基材11上的粘接膜21a，以沿着粘合剂层22的长度方向空出间隔D2的方式转移到粘合剂层22上的工序；在转移到粘合剂层22上的粘接膜21a上贴合支撑膜10的工序。在临时基材11上相邻的粘接膜21a的间隔D1，比支撑膜10上相邻的粘接膜21a的间隔D2狭窄。图5所示的实施方式所涉及的制造方法，还具备：对粘接膜21a上的粘合剂层22和基膜12进行剪切，使得将粘合剂层22区分成用作粘合膜22a的多个部分、包围该部分的环状部分22c以及除它们以外的部分的工序；将粘合剂层22中的环状部分22c与该环状部分22c上的部分的基膜12c一起除去的工序。 
粘接剂层21通过如下方法形成在临时基材11上：例如，将含有粘接剂和溶解或分散着该粘接剂的溶剂的粘接剂溶液涂布于临时基材11上，从涂布的粘接剂溶液中除去溶剂。作为临时基材11优选使用树脂膜，尤其优选利用有 机硅系的脱模剂实施了脱模处理的聚对苯二甲酸乙二醇酯膜。粘接剂层21，通常以被上膜13覆盖的状态来供给。 
使上膜13经过辊61的外周面而从粘接剂层21上剥离后，使用具有圆形的刀刃的切割机31将粘接剂层21剪切成圆形。此时，以不完全切断临时基材11的方式，只切断粘接剂层21。粘接剂层的一部分21b是作为粘接膜21a而残留的圆形部分以外的部分，该粘接剂层的一部分21b经过被设置在切割机31的下游侧的辊63的外周面而被除去。除去粘接剂层的一部分21b之后，以空出规定的间隔D1的方式被配置的粘接膜21a残留于临时基材11上。 
间隔D1并不取决于作为最终制品的多层膜1的相邻的粘接膜21a彼此之间的间隔D2，可以任意地设定。本实施方式的情形中，间隔D1被设定成小于间隔D2。 
通过减小间隔D1而高密度地形成粘接膜21a，由此可以大幅度减少作为不需要的部分而被除去的粘接剂层的一部分21b的量。特别是，像本实施方式这样，用于晶片接合用的粘接剂通常价格昂贵，减小不需要的部分所带来的优点很大。另外，如上所述，在切割时，为了确保在向环状肋骨上贴附时所用的突出部22A的空间，而需要将多层膜1中的粘接膜21a彼此之间的间隔D2设定得比较大，因此，本发明所带来的优点就极大。 
优选的是，间隔D1(相邻的粘接膜彼此之间的最短距离)被设定在0～60mm的范围。在临时基材11上相邻的粘接膜21a也可以不空出间隔，即以间隔D1＝0的方式来配置。如果间隔D1大于该范围，则作为不需要部分被除去的粘接剂层的一部分21b的量增多，本发明所产生的效果就减小。 
间隔D2可以不根据间隔D1来调节，多个间隔D2可以各不相同。 
在图4、5所示的实施方式中，使粘接膜21a转移到支撑膜10上的工序，与将粘接膜21a和粘合剂层22贴合的工序同时进行。粘接膜21a被从临时基材11上改贴合在粘合剂层22上，对粘合剂层22上的粘接膜21a贴附支撑膜10。经过涉及的一系列的工序，粘接膜21a从临时基材11上转移到支撑膜10上。这里，粘接膜21a被贴合于支撑膜10和粘合剂层22上的顺序，可以任一方在先，也可以两者同时被贴合。即，代替如图4的实施方式所示的将临时基材11上的粘接膜21a与粘合剂层22贴合而转移到粘合剂层22上后，使支撑 膜10贴合于粘合剂层22上的粘接膜21a上，例如可以将临时基材11上的粘接膜21a与支撑膜10贴合而转移到支撑膜10上后，使粘合剂层22贴合于支撑膜10上的粘接膜21a。 
粘合剂层22以具有基膜12和粘合剂层22的切割膜9的方式来供给。粘合剂层22从通常用作切割用的膜状粘合剂的物质中适当地选择。从卷筒纸卷出的长的切割膜9在辊66的外周面上移动。与辊66相向来配置辊65，辊66被设置成可沿着箭头B的方向移动。载置粘接剂层21a的临时基材11在辊65的外周面上移动，粘接膜21a到达辊65，66之间时，辊66向辊65加压。由此，粘接膜21a被转移到粘合剂层22上。粘接膜21a通过辊65，66之间后，辊66以离开辊65的方式沿着箭头B的方向移动，在下一个粘接膜21a到达之前就在规定的位置上待机。从粘接膜21a剥离的临时基材11经过辊65的外周面被排出。 
在辊65，66的上游侧，设置可以检测粘接膜21a的外观状态的CCD相机等***80，利用***80检查粘接膜21a的外观。被判定为检查结果不好的粘接膜21a在通过转印用的辊65，66之间时，辊66维持在离开辊65的位置，不好的粘接膜21a不转印到粘合剂层22上，而是与临时基材11一起排出。换种说法就是，在临时基材11的多个粘接膜21a之中，只有通过检查粘接膜21a的外观的工序被判定为合格品的粘接膜，才被转移到支撑膜10上。粘接膜21a的好坏，基于根据想要的制品规格而预先设定的基准来判定。这样，可以得到实质上不含不好的粘接膜21a的多层膜1。 
对于与粘合剂层22贴合的粘接膜21a，经过辊68的外周面被贴附在供给的支撑膜10上。通过辊68对粘合剂层22压接支撑膜10。然后，如图5所示，通过具有被设计成环状的刀刃的切割机32，沿着环状的露出部90的形状切断(剪切)粘合剂层22和基膜12。环状的粘合剂层的一部分22c和基膜的一部分12c经过辊69的外周面被除去，形成粘合膜22a。通过以上工序，得到图1、2所示的多层膜1。 
作为支撑膜10，优选使用聚对苯二甲酸乙二醇酯膜等树脂膜。经过在支撑膜上涂布粘接剂溶液的工序来在支撑膜上形成粘接膜的情形下，通常难以确保粘接膜自支撑膜的充分的脱模性。如果脱模性不足，则将含有粘接膜的层叠 体从支撑膜上剥离时，有时会剥离掉粘接膜和粘合膜。因此，支撑膜的表面通常需要进行脱模处理。但是，如果在支撑膜的粘接膜侧的表面上形成有有机硅系脱模剂等脱模剂的层，则有可能脱模剂转移到粘合膜的突出部中的与支撑膜接触的部分的表面上，使得突出部的粘合力降低。此外，由于脱模剂的混入而有可能降低粘接膜的特性，或者由脱模剂而污染半导体元件等。 
与此相对，在本实施方式中，不在支撑膜10上涂布粘接剂溶液，而是将在临时基材11上形成的粘接膜21a转移到支撑膜10上，因此，支撑膜10的粘接膜21a侧的表面即使不实施脱模处理，也可以使粘接膜21a自支撑膜10上的剥离性良好。因而，根据本实施方式，可以采用这样的支撑膜10，即，既维持粘接膜21a自支撑膜10的充分的脱模性，脱模剂又不实质性地附着在粘接膜21a侧的表面上。由于不需要支撑膜10的脱模处理，因此，根据本实施方式可以避免上述这样的问题的产生。这里，即使粘接膜21a与临时基材11的密合性强至某种程度，也可以进行粘接膜21a的重新贴附，因此，未必需要进行临时基材11的脱模处理。 
另外，经过在支撑膜上涂布粘接剂溶液的工序而在支撑膜上形成粘接膜的情形下，在残留于支撑膜上的粘接膜的周围，有时有一部分粘接剂层残存于支撑膜上。尤其是如果支撑膜不进行脱模处理，就容易残存粘接剂层。有可能残存的粘接剂被转移到粘合膜的突出部，使得突出部的粘合性降低。根据本实施方式，也可以解除这样的问题。 
此外，经过在支撑膜上涂布粘接剂溶液的工序而在支撑膜上形成粘接膜的情形下，需要在支撑膜上剪切粘接膜，因此在剪切粘接膜时在支撑膜表面上容易产生剪切伤。如果有该剪切伤，则有时在粘接膜的周围在支撑膜表面上残存膜尘等异物。根据本实施方式，可以抑制这样的剪切伤的产生和异物的残存。 
图6、7和8是表示多层膜1的制造方法的其他的实施方式的示意图。在图6所示的实施方式中，通过代替图4中的辊63，使包含具有锐角形状的截面的剥离板40的锐角部分跟随来除去临时基材11。在除去临时基材11的同时，将粘接膜21a***对向配置的1对辊70，71之间。分别对辊70的外周面供给切割膜9，对辊71的外周面供给支撑膜10。在1对辊70，71之间，粘接膜21a被***粘合剂层22和支撑膜10之间。
在图7所示的实施方式中，通过使用切割机31的剪切法将临时基材11上的粘接剂层21与上膜13一起剪切成圆形。通过残留粘接膜21a和存在于该粘接膜21a上的上膜13a，作为不需要部分的粘接剂层的一部分21b和上膜的一部分13b经过辊72的外周面被除去。然后，通过使包含具有锐角形状的截面的剥离板40的锐角部分跟随来除去临时基材11。在除去临时基材11的同时，粘接膜21a和上膜13a被贴附于经辊74供给的切割膜9的粘合剂层22上。在剥离板40的下游侧，以夹持切割膜9的方式在粘接膜21a的相反侧的位置上设置吸附垫50，通过吸附垫50的作用，将切割膜9吸附在吸附垫50上。吸附垫50通过静电、真空压力等作用吸引切割膜9。在被吸附于吸附垫50的切割膜9上，利用辊75来压接粘接膜21a。然后，除去上膜13a，利用辊76将支撑膜10层叠在露出的粘接膜21a上。 
在图8所示的实施方式中，临时基材11通过辊77自含有粘接膜21a和上膜13a的层叠体上剥离。在剥离临时基材11的位置上，该层叠体被吸附于在与该层叠体的临时基材11相反侧待机的吸附垫51上。载置含有粘接膜21a和上膜13a的层叠体的吸附垫51移动至下游侧，粘接膜21a被贴附于由辊78供给的切割膜9的粘合剂层22上。然后，除去上膜13a，支撑膜10利用辊76被层叠在露出的粘接膜21a上。 
通过图6～8所示的工序之后，与图5的实施方式同样操作，形成粘合膜22a。 
本发明并不限于以上说明的实施方式，只要不脱离本发明的主旨，就可以进行适当的变形。例如，可以使临时基材的宽度小于支撑膜的宽度。这样，即使在横向上也可以削减粘接剂层的不需要的部分。另外，只要是粘接膜从临时基材移动至支撑膜，将粘合膜形成在粘接膜上这样的一系列的工序，就可以没有特别限制地采用，各构成部件的贴附或重新粘贴的顺序等也可以进行适当的变更。 
根据本发明，在具有设置于支撑膜上的多个粘接膜的多层膜的制造中，可以以与最终制品的间隔不同的任意设定的间隔或者不空出间隔的方式有效地形成多个粘接膜。结果，例如，可以减少作为不需要的部分而除去的粘接剂层的量，实现废弃物的减量和制造成本的削减。另外，根据本发明，可以抑制支撑膜表面的剪切伤的产生和由剪切伤的产生所引起的膜尘等异物的残留。

Claims (10)

1.一种多层膜的制造方法，所述多层膜具备支撑膜和沿着所述支撑膜的长度方向配置在所述支撑膜上的多个粘接膜，其特征在于，该制造方法具备：
将形成在临时基材上的粘接剂层进行剪切，以便区分成以沿着所述临时基材的长度方向空出规定的间隔或者不空出间隔的方式配置的用作所述粘接膜的多个部分和除此以外的部分的工序(A)；以及
将所述临时基材上的多个所述粘接膜，以沿着所述支撑膜的长度方向空出规定的间隔的方式转移到所述支撑膜上的工序(B)；
其中，用作所述粘接膜的多个部分以沿着所述临时基材的长度方向空出规定间隔的方式进行配置时，在所述临时基材上相邻的所述粘接膜的间隔，比在所述支撑膜上相邻的所述粘接膜的间隔狭窄。
2.根据权利要求1所述的制造方法，其中，在所述工序(A)和所述工序(B)之间，进一步具备：除去所述临时基材上的所述粘接剂层中的所述粘接膜以外的部分的一部分或全部，将所述粘接膜残留于所述临时基材上的工序(C)。
3.根据权利要求1所述的制造方法，其中，所述支撑膜不具有沿着所述粘接膜外周的剪切伤。
4.根据权利要求1所述的制造方法，其中，所述多层膜进一步具备：设置在所述粘接膜上的，具有从所述粘接膜的外周突出的突出部的粘合膜，
该制造方法进一步具备：
使所述粘接膜和粘合剂层进行贴合的工序(a)；
对所述粘接膜上的所述粘合剂层进行剪切，以便区分成用作所述粘合膜的多个部分和除此以外的部分的工序(b)；以及
将所述粘合剂层中的所述粘合膜以外的部分的一部分或全部除去，使所述粘合膜残留于所述粘接膜上的工序(c)。
5.根据权利要求4所述的制造方法，其中，在所述工序(a)中，通过贴合所述粘接膜和所述粘合剂层，沿着所述粘合剂层的长度方向，空出与在所述临时基材上相邻的所述粘接膜的间隔不同的规定的间隔，使所述临时基材上的多个所述粘接膜转移到所述粘合剂层上，
所述工序(B)依次包含所述工序(a)和工序(d)，其中，所述工序(d)是：通过贴合所述粘合剂层上的所述粘接膜和所述支撑膜，将多个所述粘接膜以贴合于所述粘合剂层的状态，沿着所述支撑膜的长度方向空出规定的间隔，转移到所述支撑膜上的工序，
该制造方法在所述工序(B)之后具备所述工序(b)和(c)。
6.根据权利要求4所述的制造方法，其中，在所述工序(B)之后具备所述工序(a)、(b)和(c)，
在所述工序(a)中，将在所述工序(B)中转移到所述支撑膜上的所述粘接膜，以贴合于所述支撑膜的状态，贴合于所述粘合剂层。
7.根据权利要求4所述的制造方法，其中，在所述工序(c)中，对所述粘合剂层进行剪切，以便区分成用作所述粘合膜的多个部分、将该部分中的每一个包围的部分和它们以外的部分，除去将所述粘合剂层中多个所述粘合膜的每一个包围的部分。
8.根据权利要求4所述的制造方法，其中，所述粘接膜是晶片接合用的粘接膜，所述粘合膜是切割用的粘合膜。
9.根据权利要求1～8中任一项所述的制造方法，其中，进一步具备检查所述临时基材上的所述粘接膜的外观的工序。
10.根据权利要求9所述的制造方法，其中，在所述临时基材上的多个所述粘接膜之中，只有通过检查所述粘接膜的外观的工序判定为合格品的粘接膜，被转移到所述支撑膜上。
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