CN101540351A - Method for etching matte on surface of single crystal silicon solar energy battery - Google Patents
Method for etching matte on surface of single crystal silicon solar energy battery Download PDFInfo
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- CN101540351A CN101540351A CN200910097597A CN200910097597A CN101540351A CN 101540351 A CN101540351 A CN 101540351A CN 200910097597 A CN200910097597 A CN 200910097597A CN 200910097597 A CN200910097597 A CN 200910097597A CN 101540351 A CN101540351 A CN 101540351A
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- silicon solar
- silicon chip
- solar cell
- matte
- single crystal
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- 238000000034 method Methods 0.000 title claims abstract description 15
- 238000005530 etching Methods 0.000 title claims abstract description 12
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 46
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 46
- 239000010703 silicon Substances 0.000 claims abstract description 46
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 22
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000007788 liquid Substances 0.000 claims description 29
- 210000004027 cell Anatomy 0.000 claims description 20
- 235000008216 herbs Nutrition 0.000 claims description 14
- 210000002268 wool Anatomy 0.000 claims description 14
- 239000008367 deionised water Substances 0.000 claims description 9
- 230000007797 corrosion Effects 0.000 claims description 7
- 238000005260 corrosion Methods 0.000 claims description 7
- 230000035484 reaction time Effects 0.000 claims description 7
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 238000012545 processing Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000010521 absorption reaction Methods 0.000 abstract description 3
- 239000002245 particle Substances 0.000 abstract description 3
- 239000005708 Sodium hypochlorite Substances 0.000 abstract 3
- 230000003628 erosive effect Effects 0.000 abstract 1
- 238000004381 surface treatment Methods 0.000 abstract 1
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 15
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 238000007796 conventional method Methods 0.000 description 6
- 238000002310 reflectometry Methods 0.000 description 6
- 239000000243 solution Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000003153 chemical reaction reagent Substances 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 2
- 239000007853 buffer solution Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000003245 coal Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000002389 environmental scanning electron microscopy Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 239000007844 bleaching agent Substances 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Photovoltaic Devices (AREA)
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Abstract
The invention relates to a method for etching matte on the surface of a single crystal silicon solar energy battery. Sodium hypochlorite solution is adopted for eroding and etching the matte on the surface of the single crystal silicon solar energy battery. The content of the sodium hypochlorite solution is 8-15wt percent, the contents of the sodium hypochlorite and ethanol in the matte manufacturing solution are respectively 5wt percent and v110 percent. The matte on the obtained silicon chip surface is pyramid structure which is characterized in that particles have moderate size and are distributed uniformly. The absorption area of sunlight is increased, and the reflection rate of the surface of the solar energy battery is lowered. With simple process, the method requires no other auxiliary equipment and can be widely applied to the surface treatment of the single crystal silicon solar energy battery.
Description
Technical field
Technology of the present invention relate to a kind of on the single crystal silicon solar cell surface method of etching matte, it can be widely used in the surface etching of single crystal silicon solar cell handles, and belongs to the chemical etch technique field.
Background technology
Because fossil energy reserves such as traditional coal, oil are limited, and serious environment pollution in use, the CO of the annual discharging in the whole world
2Amount surpasses more than 500 hundred million tons, has seriously restricted the sustainable development of World Economics.Solar energy has reserves " unlimitedness ", and is inexhaustible.A kind of principal mode that solar cell utilizes as solar energy, a present focus that has become regenerative resource research.Wherein the production technology of monocrystaline silicon solar cell is the most ripe, and transformation efficiency is the highest, but because its cost is higher, price also is difficult to compete mutually with coal electricity, oily electricity etc., therefore, how to reduce the production cost of solar cell, improve its energy conversion efficiency, become solar energy research person's common objective.
In order to increase the absorption of light in solar cell surface, matte is made becomes a critical step.Utilize the anisotropic etch principle of alkaline solution at silicon chip surface, promptly crystalline silicon＜100〉face corrosion rate will be much larger than＜110 face and＜111 corrosion rate of face, can obtain a kind of suede structure at silicon chip surface.At present, in the industrial production of monocrystaline silicon solar cell, Woolen-making liquid commonly used mainly is the mixed solution of NaOH (KOH) and IPA (ethanol, isopropyl alcohol etc.), also useful NaCO
3Make Woolen-making liquid, use NaHCO
3Replace IPA as buffer solution, in addition, use K in addition
2CO
3, CH
3COONa etc. are as the research of Woolen-making liquid.But adopt these Woolen-making liquids also to have a lot of problems: the pyramid particle that obtains at silicon chip surface after (1) making herbs into wool is too big, about 10 μ m; (2) IPA costs an arm and a leg, highly volatile, and production cost height; (3) reflectivity of silicon chip surface is still higher after the making herbs into wool; (4) though carbonic acid class solution price is relatively cheap, very easily crystallization.Therefore, seek a kind of better effects if, and the more cheap Woolen-making liquid of price, become an important topic of present many solar cell researchers.
Summary of the invention
Purpose of the present invention just provides a kind of method at single crystal silicon solar cell surface etching matte, use Woolen-making liquid to obtain the evenly suede structure of substep at monocrystalline silicon sheet surface, and the pyramid granular size is moderate, between 1-4 μ m, the most important thing is to have obtained lower reflectivity, increased the absorption of light at silicon chip surface.The preparation method of this Woolen-making liquid is easy, and process stabilizing, is easy to control.
The invention provides the method for etching matte on the monocrystaline silicon solar cell surface, adopt the liquor natrii hypochloritis to carry out corrosion surface and making herbs into wool on the monocrystaline silicon solar cell surface, processing step is:
1. silicon chip is put in the corrosive liquid, removed surface damage layer, corrosive liquid clorox content is 8-15wt%, and temperature is controlled at 85 ± 1 ℃, and the reaction time is 20-30 minute;
2. will corrode good silicon chip and carry out making herbs into wool, this Woolen-making liquid is by clorox, and ethanol and deionized water are formed, and wherein clorox content is: 5wt%, ethanol content is: 10vl%, temperature is controlled at 80 ± 1 ℃, reaction time 5-15 minute.
3. last with the silicon chip washed with de-ionized water after the making herbs into wool, drying obtains single crystal silicon solar cell surface suede structure uniformly, and the pyramid granular size is moderate, between 1-4 μ m.
The optimum content of corrosive liquid clorox of the present invention is 15wt%.
It is 15 minutes that the optimum reacting time that silicon chip carries out making herbs into wool has been corroded in the present invention.
The present invention adopts unique chemical reagent that each component of Woolen-making liquid has been carried out reasonable configuration.Contained active chlorine has very strong oxidizability in the clorox, improving reaction rate, when shortening man-hour, can remove the organic pollution and the metal impurities ion that remain in silicon chip surface again.The silicon chip surface matte pyramid that uses corrosive liquid of the present invention and Woolen-making liquid etching to obtain is of moderate size (all below 4 μ m), be evenly distributed, and coverage rate is better, has increased the absorption area of sunlight, has reduced the reflectivity of solar battery surface.The albedo measurement that is undertaken by spectrophotometer shows, the reflectivity that uses the silicon chip surface behind corrosive liquid of the present invention and the Woolen-making liquid is all low than the silicon chip surface that obtains with conventional method at visible light and infrared most of wave band, so can make the texture of monocrystalline-silicon solar cell of better quality with this method.
The outstanding feature of technical solution of the present invention mainly shows:
1. the present invention used a kind of novelty the chemical reagent clorox as Woolen-making liquid, ethanol is as buffer solution, guaranteed that the size of matte pyramid particle can both be in a desirable scope (1-4 μ m), and arranged closely the coverage rate height.
2. use this Woolen-making liquid to generate equally distributed pyramid structure, increased absorption area, thereby reduce the reflection loss of sunlight sunlight in solar cell surface.
3. low with conventional method with this Woolen-making liquid at the matte reflectivity that silicon chip surface makes at the matte luminance factor that silicon chip surface makes.
4. clorox is as the main component of industrial bleaching agent, and its production technology is quite ripe, and price is also very cheap.
Description of drawings:
Fig. 1: with the suede structure stereoscan photograph (10000 *) of silicon chip surface of the present invention.
Fig. 2: the suede structure stereoscan photograph (2500 *) of the silicon chip surface of the mixed liquor of usefulness conventional method NaOH+ ethanol.
Fig. 3: the silicon face suede structure luminance factor of the suede structure reflectivity of usefulness silicon chip surface of the present invention and usefulness conventional method gained.
Embodiment:
Below in conjunction with accompanying drawing technical solution of the present invention is further described:
Embodiment 1
With conventional method is P type＜100 of 1 Ω cm with resistivity〉crystal face pulling of crystals silicon chip cleans up, and the concentration of then silicon chip being put into temperature and be 85 ± 1 ℃ is clorox (NaClO) the solution corrosion 25 minutes of 10wt%, to remove the silicon face affected layer.Silicon chip after will corroding is then put in 80 ± 1 ℃ the Woolen-making liquid (clorox 5wt%, ethanol 10vl%), reacts 5-10 minute, and silicon chip takes out the back washed with de-ionized water, and drying.
Embodiment 2
Method according to embodiment 1 is put into silicon chip in the corrosive liquid, removes surface damage layer, and the proportioning of described corrosive liquid is clorox 15wt%, and temperature is controlled at 85 ± 1 ℃, and the reaction time is 30 minutes.The silicon chip that corrosion is good carries out making herbs into wool, promptly puts into by clorox 5wt%, and ethanol 10vl% is in the Woolen-making liquid that deionized water is formed.In 15 minutes reaction time, temperature is controlled at 80 ± 1 ℃.At last with silicon chip washed with de-ionized water, drying.As shown in Figure 1, can see under ESEM that silicon chip surface has formed fine and close pyramid structure, the pyramid granular size is about 1～4 μ m, and is evenly distributed, the coverage rate height.
Embodiment 3 (comparative example)
This scheme is used conventional corrosive liquid, and its component is: NaOH, and ethanol and deionized water, shared separately percentage is NaOH2wt%, CH3COOH 10vl%.With conventional method is P type＜100 of 1 Ω cm with resistivity〉crystal face pulling of crystals silicon chip cleans up, and NaOH (NaOH) the solution corrosion 10 minutes of putting into temperature again and be 85 ± 1 ℃, concentration and be 15wt% is to remove surface damage layer.Silicon chip after will corroding is then put into the corrosive liquid for preparing, and making herbs into wool is 15 minutes under 80 ± 1 ℃ of temperature, and silicon chip after the making herbs into wool takes out after washed with de-ionized water, and dry.As shown in Figure 2, under ESEM, can see, the pyramid structure that silicon chip surface forms, shape is bigger.
The basic mechanical design feature index of making herbs into wool reagent of the present invention sees Table 1.
Table 1
| Test item | Embodiment 1 | Embodiment 1 | Embodiment 2 | Embodiment 3 comparative examples |
| The pyramid bottom side length | 0.8-1.5μm | 1.2-2.5μm | 2.0-4.0μm | 8-10μm |
| Pyramid distributes | Inhomogeneous, mixed and disorderly | Inhomogeneous, mixed and disorderly | Evenly, neat | Evenly, rule |
| |
5 |
10 |
15 |
15 minutes |
Claims (3)
1, a kind of on the monocrystaline silicon solar cell surface method of etching matte, it is characterized in that adopting the liquor natrii hypochloritis to corrode and making herbs into wool on the monocrystaline silicon solar cell surface, processing step is:
1. silicon chip is put in the corrosive liquid, removed surface damage layer, the content of corrosive liquid clorox is 8-15wt%, and temperature is controlled at 85 ± 1 ℃, and the reaction time is 20-30 minute;
2. will corrode good silicon chip and carry out making herbs into wool, this Woolen-making liquid is by clorox, and ethanol and deionized water are formed, and wherein clorox content is: 5wt%, and ethanol content is: 10vl%, temperature is controlled at 80 ± 1 ℃, reaction time 5-15 minute;
3. last with the silicon chip washed with de-ionized water after the making herbs into wool, drying obtains single crystal silicon solar cell surface suede structure uniformly, and the pyramid granular size is moderate, between 1-4 μ m.
2, according to claim 1 on the monocrystaline silicon solar cell surface method of etching matte, the content that it is characterized in that the corrosive liquid clorox is 15wt%.
3, according to claim 1 on the monocrystaline silicon solar cell surface method of etching matte, it is characterized in that the 15 minutes reaction time that the silicon chip after the corrosion is carried out making herbs into wool.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100975975A CN101540351B (en) | 2009-04-14 | 2009-04-14 | Method for etching matte on surface of single crystal silicon solar energy battery |
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|---|---|---|---|
| CN2009100975975A CN101540351B (en) | 2009-04-14 | 2009-04-14 | Method for etching matte on surface of single crystal silicon solar energy battery |
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| CN101540351B CN101540351B (en) | 2010-07-14 |
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