CN101540234B - 制备染料敏化太阳能电池的方法 - Google Patents

制备染料敏化太阳能电池的方法 Download PDF

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Publication number: CN101540234B
Authority: CN; China
Prior art keywords: epoxy resin; substrate; frit; weight portions; bonding
Prior art date: 2008-03-20
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

CN2009101286575A

Other languages

English (en)

Chinese (zh)

Other versions

CN101540234A (zh

Inventor

孙祯炫

李祥圭

朱汉福

朴钟大

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Dongjin Semichem Co Ltd

Original Assignee

Dongjin Semichem Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2008-03-20

Filing date

2009-03-20

Publication date

2012-07-04

2009-03-20 Application filed by Dongjin Semichem Co Ltd filed Critical Dongjin Semichem Co Ltd

2009-09-23 Publication of CN101540234A publication Critical patent/CN101540234A/zh

2012-07-04 Application granted granted Critical

2012-07-04 Publication of CN101540234B publication Critical patent/CN101540234B/zh

Status Expired - Fee Related legal-status Critical Current

2029-03-20 Anticipated expiration legal-status Critical

Links

238000000034 method Methods 0.000 title claims description 35
239000011342 resin composition Substances 0.000 claims abstract description 34
239000011521 glass Substances 0.000 claims abstract description 21
239000000203 mixture Substances 0.000 claims abstract description 17
239000000758 substrate Substances 0.000 claims description 79
239000003822 epoxy resin Substances 0.000 claims description 32
229920000647 polyepoxide Polymers 0.000 claims description 32
-1 aromatic series sulfonium salt Chemical class 0.000 claims description 13
239000002131 composite material Substances 0.000 claims description 11
239000003960 organic solvent Substances 0.000 claims description 11
239000000463 material Substances 0.000 claims description 10
229920005989 resin Polymers 0.000 claims description 10
239000011347 resin Substances 0.000 claims description 10
239000002253 acid Substances 0.000 claims description 9
239000011248 coating agent Substances 0.000 claims description 9
238000000576 coating method Methods 0.000 claims description 9
239000007822 coupling agent Substances 0.000 claims description 9
239000011256 inorganic filler Substances 0.000 claims description 9
229910003475 inorganic filler Inorganic materials 0.000 claims description 9
IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 claims description 8
ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 claims description 8
238000005245 sintering Methods 0.000 claims description 8
239000003795 chemical substances by application Substances 0.000 claims description 7
150000001875 compounds Chemical class 0.000 claims description 7
PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 claims description 6
235000010290 biphenyl Nutrition 0.000 claims description 6
239000004305 biphenyl Substances 0.000 claims description 6
XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
239000004593 Epoxy Substances 0.000 claims description 5
229920003986 novolac Polymers 0.000 claims description 5
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
229910010413 TiO 2 Inorganic materials 0.000 claims description 4
RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
229910000329 aluminium sulfate Inorganic materials 0.000 claims description 4
125000003118 aryl group Chemical group 0.000 claims description 4
PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 claims description 4
229940106691 bisphenol a Drugs 0.000 claims description 4
238000005286 illumination Methods 0.000 claims description 4
230000001678 irradiating effect Effects 0.000 claims description 4
229920001296 polysiloxane Polymers 0.000 claims description 4
CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 3
229910052710 silicon Inorganic materials 0.000 claims description 3
239000010703 silicon Substances 0.000 claims description 3
BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 claims description 3
239000000454 talc Substances 0.000 claims description 3
235000012222 talc Nutrition 0.000 claims description 3
229910052623 talc Inorganic materials 0.000 claims description 3
239000010936 titanium Substances 0.000 claims description 3
229910052719 titanium Inorganic materials 0.000 claims description 3
HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 claims description 2
FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 claims description 2
229910017083 AlN Inorganic materials 0.000 claims description 2
PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 2
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 2
239000004721 Polyphenylene oxide Substances 0.000 claims description 2
BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 2
159000000013 aluminium salts Chemical class 0.000 claims description 2
LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 claims description 2
229920001577 copolymer Polymers 0.000 claims description 2
239000011353 cycloaliphatic epoxy resin Substances 0.000 claims description 2
GUJOJGAPFQRJSV-UHFFFAOYSA-N dialuminum;dioxosilane;oxygen(2-);hydrate Chemical compound O.[O-2].[O-2].[O-2].[Al+3].[Al+3].O=[Si]=O.O=[Si]=O.O=[Si]=O.O=[Si]=O GUJOJGAPFQRJSV-UHFFFAOYSA-N 0.000 claims description 2
FHIVAFMUCKRCQO-UHFFFAOYSA-N diazinon Chemical compound CCOP(=S)(OCC)OC1=CC(C)=NC(C(C)C)=N1 FHIVAFMUCKRCQO-UHFFFAOYSA-N 0.000 claims description 2
KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 claims description 2
239000004845 glycidylamine epoxy resin Substances 0.000 claims description 2
239000010439 graphite Substances 0.000 claims description 2
229910002804 graphite Inorganic materials 0.000 claims description 2
LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 claims description 2
239000011630 iodine Substances 0.000 claims description 2
229910052740 iodine Inorganic materials 0.000 claims description 2
229910052742 iron Inorganic materials 0.000 claims description 2
235000012245 magnesium oxide Nutrition 0.000 claims description 2
239000000395 magnesium oxide Substances 0.000 claims description 2
239000010445 mica Substances 0.000 claims description 2
229910052618 mica group Inorganic materials 0.000 claims description 2
229910052901 montmorillonite Inorganic materials 0.000 claims description 2
229910052863 mullite Inorganic materials 0.000 claims description 2
150000004780 naphthols Chemical class 0.000 claims description 2
229920000570 polyether Polymers 0.000 claims description 2
229920000642 polymer Polymers 0.000 claims description 2
229910000077 silane Inorganic materials 0.000 claims description 2
229910010271 silicon carbide Inorganic materials 0.000 claims description 2
239000000377 silicon dioxide Substances 0.000 claims description 2
235000012239 silicon dioxide Nutrition 0.000 claims description 2
238000007789 sealing Methods 0.000 abstract description 18
239000003792 electrolyte Substances 0.000 abstract description 17
238000002844 melting Methods 0.000 abstract description 5
238000004519 manufacturing process Methods 0.000 abstract description 3
238000000149 argon plasma sintering Methods 0.000 abstract 1
230000008018 melting Effects 0.000 abstract 1
239000012528 membrane Substances 0.000 description 7
125000006850 spacer group Chemical group 0.000 description 7
DOIRQSBPFJWKBE-UHFFFAOYSA-N dibutyl phthalate Chemical compound CCCCOC(=O)C1=CC=CC=C1C(=O)OCCCC DOIRQSBPFJWKBE-UHFFFAOYSA-N 0.000 description 6
239000000975 dye Substances 0.000 description 6
238000006243 chemical reaction Methods 0.000 description 5
230000006866 deterioration Effects 0.000 description 5
OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 4
238000001723 curing Methods 0.000 description 4
229910000314 transition metal oxide Inorganic materials 0.000 description 4
WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 3
239000003054 catalyst Substances 0.000 description 3
238000005520 cutting process Methods 0.000 description 3
SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 3
239000000945 filler Substances 0.000 description 3
238000002360 preparation method Methods 0.000 description 3
229940116411 terpineol Drugs 0.000 description 3
229920001169 thermoplastic Polymers 0.000 description 3
ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical class CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
229920001940 conductive polymer Polymers 0.000 description 2
238000012423 maintenance Methods 0.000 description 2
238000005457 optimization Methods 0.000 description 2
239000001301 oxygen Substances 0.000 description 2
229910052760 oxygen Inorganic materials 0.000 description 2
238000007639 printing Methods 0.000 description 2
230000008569 process Effects 0.000 description 2
GYXAHUXQRATWDV-UHFFFAOYSA-N (1,3-dioxoisoindol-2-yl) trifluoromethanesulfonate Chemical compound C1=CC=C2C(=O)N(OS(=O)(=O)C(F)(F)F)C(=O)C2=C1 GYXAHUXQRATWDV-UHFFFAOYSA-N 0.000 description 1
CVBASHMCALKFME-UHFFFAOYSA-N (4-methoxyphenyl)-diphenylsulfanium Chemical class C1=CC(OC)=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 CVBASHMCALKFME-UHFFFAOYSA-N 0.000 description 1
WYYQKWASBLTRIW-UHFFFAOYSA-N 2-trimethoxysilylbenzoic acid Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1C(O)=O WYYQKWASBLTRIW-UHFFFAOYSA-N 0.000 description 1
QGHDLJAZIIFENW-UHFFFAOYSA-N 4-[1,1,1,3,3,3-hexafluoro-2-(4-hydroxy-3-prop-2-enylphenyl)propan-2-yl]-2-prop-2-enylphenol Chemical group C1=C(CC=C)C(O)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(O)C(CC=C)=C1 QGHDLJAZIIFENW-UHFFFAOYSA-N 0.000 description 1
QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
239000007848 Bronsted acid Substances 0.000 description 1
241000365446 Cordierites Species 0.000 description 1
RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical class S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
239000002841 Lewis acid Substances 0.000 description 1
238000010521 absorption reaction Methods 0.000 description 1
229920006243 acrylic copolymer Polymers 0.000 description 1
239000000853 adhesive Substances 0.000 description 1
230000001070 adhesive effect Effects 0.000 description 1
229910021417 amorphous silicon Inorganic materials 0.000 description 1
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
230000004888 barrier function Effects 0.000 description 1
230000005540 biological transmission Effects 0.000 description 1
230000015572 biosynthetic process Effects 0.000 description 1
125000006267 biphenyl group Chemical group 0.000 description 1
238000010276 construction Methods 0.000 description 1
125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
RVOWBUHHAGFJPC-UHFFFAOYSA-N dibutyl(naphthalen-1-yl)sulfanium Chemical class C1=CC=C2C([S+](CCCC)CCCC)=CC=CC2=C1 RVOWBUHHAGFJPC-UHFFFAOYSA-N 0.000 description 1
230000005518 electrochemistry Effects 0.000 description 1
238000005516 engineering process Methods 0.000 description 1
150000002148 esters Chemical class 0.000 description 1
238000011049 filling Methods 0.000 description 1
239000011737 fluorine Substances 0.000 description 1
229910052731 fluorine Inorganic materials 0.000 description 1
239000007789 gas Substances 0.000 description 1
230000009477 glass transition Effects 0.000 description 1
238000007731 hot pressing Methods 0.000 description 1
125000001841 imino group Chemical group [H]N=* 0.000 description 1
230000006872 improvement Effects 0.000 description 1
AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
150000007517 lewis acids Chemical class 0.000 description 1
230000031700 light absorption Effects 0.000 description 1
230000007774 longterm Effects 0.000 description 1
238000009766 low-temperature sintering Methods 0.000 description 1
229910052751 metal Inorganic materials 0.000 description 1
239000002184 metal Substances 0.000 description 1
238000002156 mixing Methods 0.000 description 1
230000003287 optical effect Effects 0.000 description 1
230000003647 oxidation Effects 0.000 description 1
238000007254 oxidation reaction Methods 0.000 description 1
239000002245 particle Substances 0.000 description 1
238000000016 photochemical curing Methods 0.000 description 1
230000037452 priming Effects 0.000 description 1
238000011160 research Methods 0.000 description 1
150000003839 salts Chemical class 0.000 description 1
238000007650 screen-printing Methods 0.000 description 1
239000002904 solvent Substances 0.000 description 1
150000003457 sulfones Chemical class 0.000 description 1
XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
229910001887 tin oxide Inorganic materials 0.000 description 1
ITMCEJHCFYSIIV-UHFFFAOYSA-M triflate Chemical compound [O-]S(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-M 0.000 description 1
WLOQLWBIJZDHET-UHFFFAOYSA-N triphenylsulfonium Chemical class C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 WLOQLWBIJZDHET-UHFFFAOYSA-N 0.000 description 1
238000004078 waterproofing Methods 0.000 description 1

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Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2068—Panels or arrays of photoelectrochemical cells, e.g. photovoltaic modules based on photoelectrochemical cells
- H01G9/2077—Sealing arrangements, e.g. to prevent the leakage of the electrolyte
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
- H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2059—Light-sensitive devices comprising an organic dye as the active light absorbing material, e.g. adsorbed on an electrode or dissolved in solution
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/88—Passivation; Containers; Encapsulations
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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Engineering & Computer Science (AREA)
Power Engineering (AREA)
Microelectronics & Electronic Packaging (AREA)
Computer Hardware Design (AREA)
Electromagnetism (AREA)
General Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
Physics & Mathematics (AREA)
Chemical & Material Sciences (AREA)
Chemical Kinetics & Catalysis (AREA)
Electrochemistry (AREA)
Manufacturing & Machinery (AREA)
Hybrid Cells (AREA)
Photovoltaic Devices (AREA)

CN2009101286575A 2008-03-20 2009-03-20 制备染料敏化太阳能电池的方法 Expired - Fee Related CN101540234B (zh)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
KR1020080025962A KR101518871B1 (ko)	2008-03-20	2008-03-20	염료감응 태양전지의 제조방법
KR1020080025962		2008-03-20
KR10-2008-0025962		2008-03-20

Publications (2)

Publication Number	Publication Date
CN101540234A CN101540234A (zh)	2009-09-23
CN101540234B true CN101540234B (zh)	2012-07-04

Family

ID=41078828

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CN2009101286575A Expired - Fee Related CN101540234B (zh)	2008-03-20	2009-03-20	制备染料敏化太阳能电池的方法

Country Status (5)

Country	Link
JP (1)	JP5492433B2 (ko)
KR (1)	KR101518871B1 (ko)
CN (1)	CN101540234B (ko)
DE (1)	DE102009012545A1 (ko)
TW (1)	TWI469381B (ko)

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Publication number	Priority date	Publication date	Assignee	Title
JP5507954B2 (ja) *	2009-10-19	2014-05-28	三星エスディアイ株式会社	ガラスペースト組成物、電極基板とその製造方法、及び色素増感型太陽電池
KR101097270B1 (ko) *	2010-03-25	2011-12-21	삼성에스디아이 주식회사	광전변환소자
KR20120028494A (ko) *	2010-09-15	2012-03-23	주식회사 동진쎄미켐	효율이 개선된 염료감응 태양전지
CN101950690A (zh) *	2010-09-27	2011-01-19	彩虹集团公司	一种染料敏化太阳能电池及其密封方法
KR101144038B1 (ko)	2010-11-11	2012-05-24	현대자동차주식회사	곡면형 염료감응 태양전지 및 그 제조방법
KR20120087657A (ko) *	2011-01-28	2012-08-07	엘지이노텍 주식회사	태양 전지
CN102324308B (zh) *	2011-06-29	2012-10-17	西安建筑科技大学	一种改善染料敏化太阳能电池基板界面粘结性的方法
KR101349344B1 (ko) *	2011-12-06	2014-01-17	한국전기연구원	염료감응형 태양전지 내외부 보호용 유무기 실링재
CN102709062B (zh) *	2012-06-05	2016-07-13	南昌航空大学	一种染料敏化太阳电池的密封方法
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