CN101533878A - III-nitrogen compound semiconductor luminous element and preparation method thereof - Google Patents
III-nitrogen compound semiconductor luminous element and preparation method thereof Download PDFInfo
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- CN101533878A CN101533878A CN200810083678A CN200810083678A CN101533878A CN 101533878 A CN101533878 A CN 101533878A CN 200810083678 A CN200810083678 A CN 200810083678A CN 200810083678 A CN200810083678 A CN 200810083678A CN 101533878 A CN101533878 A CN 101533878A
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Abstract
The invention relates to a III-nitrogen compound semiconductor luminous element and a preparation method thereof. The method comprises the following steps of: growing a first III-nitrogen compound semiconductor layer on the surface of a temporary substrate; patterning the first III-nitrogen compound semiconductor layer through the photoetching technology; forming a second III-nitrogen compound semiconductor layer on the patterned first III-nitrogen compound semiconductor layer; forming a conducting material layer on the second III-nitrogen compound semiconductor layer; and obtaining the conducting material layer and a combined body of the conducting material layer by separating the conducting material layer from the first III-nitrogen compound semiconductor layer. The invention provides a substrate separation technology ensuring the quality stability and quantified production.
Description
Technical field
The present invention relates to a kind of III-nitrogen compound semiconductor luminous element and manufacture method thereof, relate in particular to a kind of manufacture method of the lumination of light emitting diode structure that is used to grow up.
Background technology
Being that the light-emitting diode of luminescent material often utilizes sapphire as substrate with gallium nitride or III-nitride at present, mainly is the lattice constant of sapphire and the III-nitride degree lower (generally still needing resilient coating to improve not matching of lattice constant) that do not match.But with the sapphire is that substrate also has many shortcomings, and for example: insulating properties is very big, can make that so the light-emitting diode of III-nitride is not easy to produce the structure of perpendicular elements.Therefore, utilize other materials (as carborundum) to come, with the technology constantly research and development always that improve above-mentioned shortcoming as substrate.And carborundum can be used as conductor substrate because of its conductibility, and the lattice of carborundum and the III-nitride luminescent layer rate that do not match is less, therefore can utilize resilient coatings such as gallium nitride, aluminium gallium nitride alloy to make the III-nitride extension on silicon carbide substrate, and carborundum tool high stability, and make carborundum day by day important.Though by resilient coatings such as gallium nitride, aluminium gallium nitride alloy make III-nitride can extension on silicon carbide substrate, the lattice match rate of III-nitride and carborundum is low than the lattice match rate of aluminium nitride and carborundum still.Therefore be formed on the carbon silicide substrate when gallium nitride, aluminium gallium nitride alloy epitaxial buffer layer, still be easy in after epitaxial loayer in cause defective, and the cost of silicon carbide substrate is higher.
Fig. 1 (a)～Fig. 1 (b) is that the substrate of 6,071, No. 795 patents of U.S. US separates schematic diagram.Prior to forming Disengagement zone 12 and silicon nitride layer 13 on the sapphire substrate 11 in regular turn, then knitting layer 14 is coated the surface of silicon nitride layer 13.By the adhesiveness of knitting layer 14, again that silicon substrate 15 is bonding mutually with the laminated construction of aforementioned sapphire substrate 11.Utilize laser beam 16 to penetrate sapphire substrate 11 surfaces, thereby make the material breakdown (decomposition) of Disengagement zone 12 with sub irradiation abscission zone 12.Remove the material that decomposes residual Disengagement zone 12, back again, just can obtain the assembly of silicon substrate 15 and silicon nitride layer 13.But owing between silicon substrate 15 and the silicon nitride layer 13 nonconducting knitting layer 14 is arranged, therefore still can't be as the foundation structure of perpendicular elements.And knitting layer 14 can influence adhesion results if coating or material selection are good, even causes the silicon nitride layer 13 generation defectives of film.
Fig. 2 is that the substrate of 6,740, No. 604 patents of U.S. US separates schematic diagram.This known technology is similar to known technology among Figure 1A～1B.First semiconductor layer 21 and second semiconductor layer 22 also by laser beam 23 irradiation interfaces, decompose thereby second semiconductor layer 22 is produced in the interface place, first semiconductor layer 21 can be separated on second semiconductor layer 22 at last.This second semiconductor layer 22 can be the rete that is formed on the substrate, that is replaces first semiconductor layer 21 with substrate, again with this two separation.
Fig. 3 is the schematic diagram before the substrate of 6,746, No. 889 patents of U.S. US separates.Prior to several epitaxial loayers of growing up on the substrate 31, it comprises the first type conductor region 32, luminous PN connects the face district 33 and the second type conductor region 34.Cut the Cutting Road 36 of these several epitaxial loayers from the second type conductor region, 34 directions, so the LED crystal particle 35 of a plurality of separation of formation on substrate 31.Again that the second type conductor region 34 is bonding with time fixture (submount) 31.With similar aforementioned known techniques, penetrate substrate 31 surfaces with laser light equally, and make substrate 31 separate with the first type conductor region 32.The LED crystal particle 35 of separating can be taken off on time fixture 31, thereby carries out packaging technology.Clearly, cut these several epitaxial loayers after, push each other because of external force easily when each LED crystal particle 35 is bonded in fixture 31, so easily crystalline substance collapses (die crack) and causes damage.
Fig. 4 is that the substrate of 6,617, No. 261 patents of U.S. US separates schematic diagram.Form gallium nitride layer 42 prior to sapphire substrate 41, form a plurality of irrigation canals and ditches 44 with etch process in gallium nitride layer 42 again.With viscose glue silicon substrate 43 is bonded in gallium nitride layer 42 surfaces of these tool irrigation canals and ditches 44 then, and the laser beam 46 irradiation sapphire substrates 41 that send with ultraviolet excimer laser 45.Laser beam 46 passes transparent sapphire substrate 41, further contacts and decomposes gallium nitride layer 42, so just can obtain having the silicon substrate 43 of gallium nitride layer 42.Yet these gallium nitride layer 42 decomposition place are still needed with the gallium of salt acid treatment remnants, and repair this surface and just can carry out follow-up epitaxy technique.
Aforementioned known techniques nearly all is to adopt high-octane laser light to come separating base plate or light-emitting diode, and so this type of mode processing speed is slow, and needs expensive equipment to carry out.In sum, want a kind of substrate isolation technics of guaranteeing stay in grade and volume production, can improve the various shortcomings of above-mentioned known technology but need badly on the market.
Summary of the invention
Main purpose of the present invention is to provide a kind of manufacture method and structure thereof of III-nitrogen compound semiconductor luminous element, can adopt the basis that nonconducting temporary base is an extension, and further remove this temporary base and form the III-nitrogen compound semiconductor luminous element of vertical conducting structure.
Another object of the present invention is to provide a kind of manufacture method and structure thereof of III-nitrogen compound semiconductor luminous element, it uses existing Processes and apparatus, therefore can reduce the cost of making.
For reaching above-mentioned purpose, the present invention discloses a kind of manufacture method of III-nitrogen compound semiconductor luminous element, and it comprises the following step: the first III-family nitrogen compound semiconductor layer of growing up is in the surface of temporary base; With this first III-family nitrogen compound semiconductor layer of photoetching process patterning; Form the second III-family nitrogen compound semiconductor layer in this on the first III-family nitrogen compound semiconductor layer of patterning; Form a conductive material layer in this second III-family nitrogen compound semiconductor layer; And this first III-family nitrogen compound semiconductor layer separates to obtain the assembly of the second III-family nitrogen compound semiconductor layer and conductive material layer certainly.
This photoetching process comprises the following step: the dielectric mask layer that forms patterning on this first III-family nitrogen compound semiconductor layer earlier; This first III-family nitrogen compound semiconductor layer of etching does not have the part that covers this dielectric mask layer; And remove this dielectric mask layer, wherein this dielectric mask layer is a photoresist layer.
Present embodiment also is included in the step that forms the speculum surface layer between this second III-family nitrogen compound semiconductor layer and this conductive material layer.Also be included in the step that forms N type semiconductor material layer, active layer and P type semiconductor material layer between this second III-family nitrogen compound semiconductor layer and this speculum surface layer again.
This conductive material layer is by the copper or the nickel dam of electroplating deposition.
Present embodiment also comprises the step of this first III-family nitrogen compound semiconductor layer that this second III-family nitrogen compound semiconductor laminar surface of removal retains.This first III-family nitrogen compound semiconductor layer is removed by dry ecthing or wet etching.
The material of this temporary base is sapphire (Al
2O
3), carborundum (SiC), silicon, zinc oxide (ZnO), magnesium oxide (MgO) and GaAs.
This first III-family nitrogen compound semiconductor layer decomposes by the irradiating laser light beam, thereby makes the combination physical efficiency of this second III-family nitrogen compound semiconductor layer and this conductive material layer separate with this temporary base.
The first III-family nitrogen compound semiconductor layer of this patterning comprises a plurality of protuberances and a plurality of groove.These a plurality of protuberances are hexagonal cylinder, cylinder or cubic cylinder, and these a plurality of grooves are respectively around this protuberance respectively.Or these a plurality of protuberances are long and narrow bars, these a plurality of these protuberances of groove separating adjacent.
The present invention discloses a kind of III-nitrogen compound semiconductor luminous element in addition, comprises: the III-family nitrogen compound semiconductor layer; The speculum surface layer is formed on this III-family nitrogen compound semiconductor layer; And a conductive material layer, be formed on this speculum surface layer.
The material of this III-family nitrogen compound semiconductor layer is Al
xIn
yGa
1-x-yN, wherein 0 ≦ x ≦ 1 and 0 ≦ y ≦ 1.
This conductive material layer is by copper (Cu), nickel (Ni) or the tungsten-copper alloy (CuW) electroplated or composite plating deposits.
Present embodiment also is included between this second III-family nitrogen compound semiconductor layer and this speculum surface layer and is provided with N type semiconductor material layer, active layer and P type semiconductor material layer.
But the invention provides a kind of substrate isolation technics of guaranteeing stay in grade and volume production.
Description of drawings
Fig. 1 (a)～1 (b) is that the substrate of 6,071, No. 795 patents of U.S. US separates schematic diagram;
Fig. 2 is that the substrate of 6,740, No. 604 patents of U.S. US separates schematic diagram;
Fig. 3 is the schematic diagram before the substrate of 6,740, No. 604 patents of U.S. US separates;
Fig. 4 is that the substrate of 6,617, No. 261 patents of U.S. US separates schematic diagram;
Fig. 5 is the manufacturing flow chart of III-nitrogen compound semiconductor luminous element of the present invention;
Fig. 6 (a)～Fig. 6 (i) is the manufacturing schematic diagram of III-nitrogen compound semiconductor luminous element of the present invention; And
Fig. 7 (a)～Fig. 7 (d) is the schematic diagram of the first III-family nitrogen compound semiconductor layer of patterning of the present invention.
Wherein, description of reference numerals is as follows:
11 sapphire substrates, 12 Disengagement zone
13 silicon nitride layers, 14 knitting layers
15 silicon substrates, 16 laser beams
21 first semiconductor layers, 22 second semiconductor layers
23 laser beams, 31 substrates
32 first type conductor regions, 33 luminous PN meet the face district
34 second type conductor regions, 35 LED crystal particle
36 Cutting Roads, 41 sapphire substrates
42 gallium nitride layers, 43 silicon substrates
44 irrigation canals and ditches, 45 ultraviolet excimer laser
46 laser beams, 61 temporary bases
62,62 ' the first III-family nitrogen compound semiconductor layers
63 dielectric mask layer
64 second III-family nitrogen compound semiconductor layers
65 speculum surface layers, 66 conductive material layers
67 etch protection layer
621 hexagonal cylinders, 622,624,626,628 grooves
623 cylinders, 625 cubic cylinders
627 protuberances
Embodiment
Fig. 5 is the manufacturing flow chart of III-nitrogen compound semiconductor luminous element of the present invention.Shown in step S51, the first III-family nitrogen compound semiconductor layer of growing up is in the surface of temporary base, for example: sapphire (that is aluminum oxide Al
2O
3), carborundum (SiC), silicon, zinc oxide (ZnO), magnesium oxide (MgO) and GaAs (GaAs) etc.According to the step of step S52 photoetching process to the step S54, on this first III-family nitrogen compound semiconductor layer, form the dielectric mask layer (dielectric mask layer) of patterning earlier, for example: the photoresist layer again; This first III-family nitrogen compound semiconductor layer of etching does not have the part that covers this dielectric mask layer; Remove this dielectric mask layer, then can obtain the first III-family nitrogen compound semiconductor layer of identical patternsization.
Shown in step S55, on the first III-family nitrogen compound semiconductor layer of this patterning, form the second III-family nitrogen compound semiconductor layer.And on the second III-family nitrogen compound semiconductor layer, form metallic mirror surface (metal mirror) layer, referring to step S56.Shown in step S57, the deposits conductive material layer is on the speculum surface layer, for example: copper (Cu), nickel (Ni) or the tungsten-copper alloy (CuW) of plating or composite plating deposition.Shown in step S58, at last the second III-family nitrogen compound semiconductor layer, speculum surface layer and conductive material layer are separated from this first III-family nitrogen compound semiconductor layer, can adopt etching step this first III-family nitrogen compound semiconductor layer is decomposed; Or, this first III-family nitrogen compound semiconductor layer is decomposed with the irradiation of the temporary base place of laser beam self-induced transparency.
Fig. 6 (a)～6 (i) is the manufacturing schematic diagram of III-nitrogen compound semiconductor luminous element of the present invention.The first III-family nitrogen compound semiconductor layer 62 of growing up in the surface of temporary base 61, and on this first III-family nitrogen compound semiconductor layer 62, form the dielectric mask layer 63 of patterning.The first III-family nitrogen compound semiconductor layer 62 does not have the etched removal of part that covers these dielectric mask layer 63, remove again the first III-family nitrogen compound semiconductor layer 62 that this dielectric mask layer 63 so obtains identical patternsization ', see also Fig. 6 (d).Then, in the first III-family nitrogen compound semiconductor layer 62 of patterning ' on form the second III-family nitrogen compound semiconductor layer 64, and on the second III-family nitrogen compound semiconductor layer 64, form speculum surface layer 65.This speculum surface layer 65 can be selected, and can utilize speculum surface layer 65 reflection rays according to the packaged type of light-emitting component.Maybe can select on the second III-family nitrogen compound semiconductor layer 64, to form N type semiconductor material layer, active layer and P type semiconductor material layer earlier, and then form speculum surface layer 65.
Shown in Fig. 6 (g), deposits conductive material layer 66 and (for example: silicon dioxide SiO imposes etch protection layer 67 on speculum surface layer 65
2) conductive material layer 66 and speculum surface layer 65 are protected.Utilize etching solution to enter the first III-family nitrogen compound semiconductor layer 62 ' middle groove again, and with the first III-family nitrogen compound semiconductor layer 62 ' separate from temporary base 61.Because of being subjected to the protection of etch protection layer 67, destroyed so conductive material layer 66 and speculum surface layer 65 can not touch etching solution.Because the still possible remaining first III-family nitrogen compound semiconductor layer 62 in the second III-family nitrogen compound semiconductor layer, 64 surface ', so the surface that also will repair the second III-family nitrogen compound semiconductor layer 64 by wet etching, that is remove the first remaining III-family nitrogen compound semiconductor layer 62 ', shown in Fig. 6 (i).In addition, again etch protection layer 67 is removed.The material of the first III-family nitrogen compound semiconductor layer 62 and the second III-family nitrogen compound semiconductor layer 64 can be Al again
xIn
yGa
1-x-yN, 0 ≦ x ≦ 1 and 0 ≦ y ≦ 1 wherein helps to utilize the mode of the extension n type gallium nitride doped silicon film of growing up in its surface.This second III-family nitrogen compound semiconductor layer 64 can be a ray structure, that is comprises n type semiconductor layer, active layer (or luminescent layer) and p type semiconductor layer.Perhaps can on this second III-family nitrogen compound semiconductor layer 64, form ray structure again.
Fig. 7 (a)～Fig. 7 (d) is the schematic diagram of the first III-family nitrogen compound semiconductor layer of patterning of the present invention.Shown in Fig. 7 (a), a plurality of grooves 622 that the first III-family nitrogen compound semiconductor layer 62 is etched into a plurality of hexagonal cylinders 621 and is interconnected; Shown in Fig. 7 (b), a plurality of grooves 624 that the first III-family nitrogen compound semiconductor layer 62 is etched into a plurality of cylinders 623 and is interconnected; Shown in Fig. 7 (c), a plurality of grooves 626 that the first III-family nitrogen compound semiconductor layer 62 is etched into a plurality of cubic cylinders 625 and is interconnected; Shown in Fig. 7 (d), the first III-family nitrogen compound semiconductor layer 62 is etched into the groove 628 of a plurality of protuberances 627 and a plurality of separating adjacent protuberances 627, and protuberance 627 is long and narrow bars again.
Technology contents of the present invention and technical characterstic disclose as above, yet those skilled in the art still may be based on teaching of the present invention and announcements and done all replacement and modifications that does not deviate from spirit of the present invention.Therefore, protection scope of the present invention should be not limited to those disclosed embodiments, and should comprise various do not deviate from replacement of the present invention and modifications, and is contained by following claim.
Claims (19)
1, a kind of manufacture method of III-nitrogen compound semiconductor luminous element comprises the following step:
Grow up the first III-family nitrogen compound semiconductor layer in the surface of temporary base;
With the described first III-family nitrogen compound semiconductor layer of photoetching process patterning;
Form the second III-family nitrogen compound semiconductor layer on the first III-family nitrogen compound semiconductor layer of described patterning;
Form conductive material layer in the described second III-family nitrogen compound semiconductor layer; And
From the described first III-family nitrogen compound semiconductor layer described temporary base is removed, to obtain the assembly of described second III-family nitrogen compound semiconductor layer and described conductive material layer.
2, according to the manufacture method of the III-nitrogen compound semiconductor luminous element of claim 1, wherein said photoetching process comprises the following step:
On the described first III-family nitrogen compound semiconductor layer, form the dielectric mask layer of patterning earlier;
The described first III-family nitrogen compound semiconductor layer of etching does not have the part that covers described dielectric mask layer; And
Remove described dielectric mask layer.
3, according to the manufacture method of the III-nitrogen compound semiconductor luminous element of claim 2, wherein said dielectric mask layer is the photoresist layer.
4, according to the manufacture method of the III-nitrogen compound semiconductor luminous element of claim 1, it also is included in the step that forms the speculum surface layer between described second III-family nitrogen compound semiconductor layer and the described conductive material layer.
5, according to the manufacture method of the III-nitrogen compound semiconductor luminous element of claim 1, wherein said conductive material layer is by electroplating or copper, nickel or the tungsten-copper alloy of composite plating deposition.
6, according to the manufacture method of the III-nitrogen compound semiconductor luminous element of claim 1, it also comprises the step of removing the described first III-family nitrogen compound semiconductor layer that the described second III-family nitrogen compound semiconductor laminar surface retains.
7, according to the manufacture method of the III-nitrogen compound semiconductor luminous element of claim 6, the wherein said first III-family nitrogen compound semiconductor layer is removed by wet etching.
8, according to the manufacture method of the III-nitrogen compound semiconductor luminous element of claim 1, the material of wherein said temporary base is sapphire, carborundum, silicon, zinc oxide, magnesium oxide and GaAs.
9, according to the manufacture method of the III-nitrogen compound semiconductor luminous element of claim 1, the wherein said first III-family nitrogen compound semiconductor layer decomposes by the irradiating laser light beam, thereby makes the combination physical efficiency of described second III-family nitrogen compound semiconductor layer and described conductive material layer separate with described temporary base.
10, according to the manufacture method of the III-nitrogen compound semiconductor luminous element of claim 1, the wherein said first III-family nitrogen compound semiconductor layer decomposes by wet etching, thereby makes the combination physical efficiency of described second III-family nitrogen compound semiconductor layer and described conductive material layer separate with described temporary base.
11, according to the manufacture method of the III-nitrogen compound semiconductor luminous element of claim 4, it also is included in the step that forms N type semiconductor material layer, active layer and P type semiconductor material layer between described second III-family nitrogen compound semiconductor layer and the described speculum surface layer.
12, according to the manufacture method of the III-nitrogen compound semiconductor luminous element of claim 1, the first III-family nitrogen compound semiconductor layer of wherein said patterning comprises a plurality of protuberances and a plurality of groove in the middle of described a plurality of protuberances.
13, according to the manufacture method of the III-nitrogen compound semiconductor luminous element of claim 12, wherein said a plurality of protuberances are hexagonal cylinder, cylinder or cubic cylinder, and described a plurality of grooves are respectively around each described protuberance.
14, according to the manufacture method of the III-nitrogen compound semiconductor luminous element of claim 12, wherein said a plurality of protuberances are long and narrow bars, the described protuberance of described a plurality of groove separating adjacents.
15, according to the manufacture method of the III-nitrogen compound semiconductor luminous element of claim 4, it also is included in the step that described conductive material layer and described metallic mirror surface laminar surface impose etch protection layer.
16, a kind of III-nitrogen compound semiconductor luminous element comprises:
The III-family nitrogen compound semiconductor layer;
The speculum surface layer is formed on the described III-family nitrogen compound semiconductor layer; And
Conductive material layer is formed on the described speculum surface layer.
17, according to the III-nitrogen compound semiconductor luminous element of claim 16, the material of wherein said III-family nitrogen compound semiconductor layer is Al
xIn
yGa
1-x-yN, wherein 0 ≦ x ≦ 1 and 0 ≦ y ≦ 1.
18, according to the III-nitrogen compound semiconductor luminous element of claim 16, wherein said conductive material layer is by copper, nickel or the tungsten-copper alloy electroplated or composite plating deposits.
19, according to the III-nitrogen compound semiconductor luminous element of claim 16, it also is included between described second III-family nitrogen compound semiconductor layer and the described speculum surface layer and is provided with N type semiconductor material layer, active layer and P type semiconductor material layer.
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|---|---|---|---|
| CN200810083678A CN101533878A (en) | 2008-03-14 | 2008-03-14 | III-nitrogen compound semiconductor luminous element and preparation method thereof |
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|---|---|---|---|
| CN200810083678A CN101533878A (en) | 2008-03-14 | 2008-03-14 | III-nitrogen compound semiconductor luminous element and preparation method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106952860A (en) * | 2015-12-15 | 2017-07-14 | 安世有限公司 | Semiconductor device and the method for making semiconductor device |
-
2008
- 2008-03-14 CN CN200810083678A patent/CN101533878A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106952860A (en) * | 2015-12-15 | 2017-07-14 | 安世有限公司 | Semiconductor device and the method for making semiconductor device |
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