CN101523562B - 分布化学机械抛光方法 - Google Patents
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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Abstract
Description
技术领域
本发明涉及一种分步化学机械抛光方法。
技术背景
在多晶硅的抛光过程中,通常会存在如下问题:因为抛光速率选择比(多晶硅/二氧化硅)过高,使得最后抛光过程停止在二氧化硅层上时,难免会有多晶硅的碟形凹损。如图1所示,图中a、b分别为抛光前和抛光后的结构。且该问题会随着二氧化硅之间的沟槽宽度的增加而加重。这会对器件的性能造成严重影响。
因此,解决多晶硅抛光过程中表面碟形凹损缺陷、及去除问题至关重要。专利文献US2003153189公开了一种化学机械抛光的方法和抛光液的组成,通过添加一种阴离子聚合物来减少氧化物沟槽内的多晶硅的碟形凹损,以及降低生产成本。专利文献US6191039揭示了一种二步化学机械抛光方法,通过控制第一步与第二步的pH值(9.5~10.5;10.2~10.35)的抛光方法,可以降低化抛光的时间和成本,且有较好的平坦化效果。
发明概要
本发明的目的是为了解决在多晶硅的抛光过程中,因抛光速率选择比(多晶硅/二氧化硅)过高,使得最后抛光过程停止在二氧化硅层上时,出现表面碟形凹损的问题,提供一种可降低表面碟形凹损缺陷率,使晶片平坦度增高,并可同时增大晶片及抛光垫上的清洁度,使工艺更稳定的化学机械抛光方法。
本发明的上述目的是通过下列技术方案来实现的:第一步骤,采用具有多晶硅去除速率大于或等于200A/min的化学机械抛光液去除大部分的多晶硅但不暴露多晶硅表面;第二步骤,在该抛光液中加入氧化剂后,对多晶硅表面以及随后暴露出来的多晶硅与二氧化硅表面进行抛光。
本发明中,使第一步的多晶硅去除速率大于或等于200A/min属于本领域人员的公知技术。
本发明的方法中,第一步骤多晶硅的抛光速率可能范围为200~10000A/min;第二步骤,多晶硅与二氧化硅的抛光速率比可能范围为10∶1与1∶1之间,最佳范围为5∶1与1∶1之间。
本发明中,第一步的结束可以通过限定时间,或通过终点控制***来控制结束。
本发明中,所述的抛光液可包含至少一种研磨颗粒和水。所述的研磨颗粒可选自下列七种中的一个或多个:二氧化硅,三氧化二铝,二氧化铈,二氧化锆,碳化硅,聚四氟乙烯(PTFE)。所述的研磨颗粒的含量较佳的为重量百分比小于或等于30%。
本发明中,所述的抛光液还可包含现有技术中的其他添加剂,如pH调节剂、络合剂和/或多晶硅去除速率调节剂等。
本发明中,所述的氧化剂可为含硫氧化剂、含碘氧化剂、含溴氧化剂、含氯氧化剂、双氧水、过氧乙酸或其它过氧化物等。所述的氧化剂的加入量较佳的为重量百分比0.1~30%。
本发明的积极进步效果在于:可避免表面碟形凹损缺陷,使晶片平坦度增高,并可同时增大晶片及抛光垫上的清洁度,使工艺更稳定。本发明抛光效果如图2所示,图中a、b分别为抛光前和抛光后的结构。其效果将通过实施例进一步说明。
附图说明
图1为常规多晶硅抛光过程中,抛光前(a)和抛光后(b)的结构。
图2为采用本发明方法进行多晶硅抛光,抛光前(a)和抛光后(b)的结构。
发明内容
下面通过实施例的方式进一步说明本发明,并不因此将本发明限制在所述的实施例范围之中。
实施例1分步化学机械抛光法
抛光液:0.1wt.%Al2O3,pH调节剂为KOH,水为余量,pH=11
氧化剂:过硫酸铝Al2(S2O8)3
1.将抛光液滴到PPG CSYMXP-710抛光垫上,晶片正面向下,接触抛光垫表面,以70rpm和80rpm的转速分别旋转抛光盘和抛光头,同时在被抛光的晶片背面施加1psi的下压力,进行抛光。多晶硅去除速率为:200A/min。抛光液流速为100ml/min,限定时间2分钟。
2.在抛光液中加入0.1wt.%Al2(S2O8)3,之后进行抛光,抛光条件同第一步骤。
实施例2分步化学机械抛光法
抛光液:30wt.%CeO2,1.0wt%EDTA,水为余量,pH=10。
氧化剂:KIO3
1.将抛光液滴到PPG CSY MXP-710抛光垫上,晶片正面向下,接触抛光垫表面,以70rpm和80rpm的转速分别旋转抛光盘和抛光头,同时在被抛光的晶片背面施加3psi的下压力,进行抛光。多晶硅去除速率为:900A/min。抛光液流速为100ml/min,限定时间2分钟。
2.在抛光液中加入10wt.%KIO3,之后进行抛光,抛光条件同第一步骤。
实施例3分步化学机械抛光法
抛光液:10wt.%ZrO2,0.1wt.%吐温40,水为余量,pH=11
氧化剂:KBrO3
1.将抛光液滴到PPG CSYMXP-710抛光垫上,晶片正面向下,接触抛光垫表面,以70rpm和80rpm的转速分别旋转抛光盘和抛光头,同时在被抛光的晶片背面施加5psi的下压力,进行抛光。多晶硅去除速率为:5000A/min。抛光液流速为100ml/min,限定时间2分钟。
2.在抛光液中加入15wt.%KBrO3,之后进行抛光,抛光条件同第一步骤。
实施例4分步化学机械抛光法
抛光液:10wt.%SiC,水为余量,pH=11
氧化剂:KClO4
1.将抛光液滴到PPG CSYMXP-710抛光垫上,晶片正面向下,接触抛光垫表面,以100rpm和97rpm的转速分别旋转抛光盘和抛光头,同时在被抛光的晶片背面施加5psi的下压力,进行抛光。多晶硅去除速率为:8000A/min。抛光液流速为100ml/min,限定时间2分钟。
2.在抛光液中加入20wt.%KClO4,之后进行抛光,抛光条件同第一步骤。
实施例5分步化学机械抛光法
抛光液:10wt.%聚四氟乙烯(PTFE),水为余量,pH=11
氧化剂:过氧乙酸
1.将抛光液滴到PPG CSYMXP-710抛光垫上,晶片正面向下,接触抛光垫表面,以70rpm和80rpm的转速分别旋转抛光盘和抛光头,同时在被抛光的晶片背面施加3psi的下压力,进行抛光。多晶硅去除速率为:2000A/min。抛光液流速为100ml/min,限定时间2分钟。
2.在抛光液中加入30wt.%过氧乙酸,之后进行抛光,抛光条件同第一步骤。
实施例6分步化学机械抛光法
抛光液:10wt.%聚苯乙烯,水为余量,pH=11
氧化剂:过氧化甲乙酮
1.将抛光液滴到PPG CSYMXP-710抛光垫上,晶片正面向下,接触抛光垫表面,以70rpm和80rpm的转速分别旋转抛光盘和抛光头,同时在被抛光的晶片背面施加3psi的下压力,进行抛光。多晶硅去除速率为:2600A/min。抛光液流速为100ml/min,限定时间2分钟。
2.在抛光液中加入15wt.%过氧化甲乙酮,之后进行抛光,抛光条件同第一步骤。
效果实施例1分步化学机械抛光法
抛光液:10wt.%SiO2,水为余量,pH=11。
氧化剂:双氧水。
1.将抛光液滴到PPG CSYMXP-710抛光垫上,晶片正面向下,接触抛光垫表面,以70rpm和80rpm的转速分别旋转抛光盘和抛光头,同时在被抛光的晶片背面施加3psi的下压力,进行抛光。多晶硅去除速率为:2500A/min。抛光液流速为100ml/min。
2.在抛光液中加入15wt.%双氧水,之后进行抛光,抛光条件同第一步骤。抛光结果如表1所示:
表1分步抛光法第一、第二步骤中多晶硅、二氧化硅去除速率及其选择比
步骤 | 多晶硅去除速率(A/min) | 二氧化硅去除速率(A/min) | 选择比 |
第一步骤 | 2500 | 300 | 8.3∶1 |
第二步骤 | 900 | 300 | 3∶1 |
由上表可见,与第一步骤相比,第二步骤加入氧化剂后,多晶硅去除速率显著降低,而二氧化硅去除速率不变,使得多晶硅/二氧化硅去除速率选择比从8.3∶1降低到3∶1,从而可避免因多晶硅/二氧化硅抛光速率选择比过高,使得最后抛光过程停止在二氧化硅层上时产生多晶硅的碟形凹损。
Claims (4)
1.一种分步化学机械抛光方法,其特征在于:第一步骤用具有多晶硅去除速率大于或等于200埃/min的化学机械抛光液进行抛光,第二步骤在该抛光液中加入氧化剂进行抛光,所述的氧化剂的加入量为重量百分比10~30%,其中,所述的抛光液包含至少一种研磨颗粒和水,所述的研磨颗粒选自下列五种中的一个或多个:二氧化铈,二氧化锆,碳化硅,聚四氟乙烯和聚苯乙烯。
2.根据权利要求1所述的分步化学机械抛光方法,其特征在于:所述的研磨颗粒的含量为重量百分比小于或等于30%。
3.根据权利要求1所述的分步化学机械抛光方法,其特征在于:所述的抛光液还包含pH调节剂、络合剂和/或多晶硅去除速率调节剂。
4.根据权利要求1所述的分步化学机械抛光方法,其特征在于:所述的氧化剂为含硫氧化剂、含碘氧化剂、含溴氧化剂、含氯氧化剂、双氧水、过氧乙酸或其它过氧化物。
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CN101992422B (zh) * | 2009-08-25 | 2012-07-25 | 中芯国际集成电路制造(上海)有限公司 | 铜化学机械抛光的过程控制方法和*** |
CN102148130B (zh) * | 2010-02-09 | 2012-11-07 | 上海华虹Nec电子有限公司 | 改善对外部环境敏感的表面光刻工艺控制能力的方法 |
CN105538047B (zh) * | 2015-12-11 | 2017-09-22 | 中国航空工业集团公司北京航空材料研究院 | 一种航空有机透明制件的表面研抛方法 |
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US6350693B2 (en) * | 1997-11-15 | 2002-02-26 | Taiwan Semiconductor Manufacturing Company | Method of CMP of polysilicon |
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CN1731567A (zh) * | 2005-06-22 | 2006-02-08 | 中国科学院上海微***与信息技术研究所 | 集成电路铜互连一步化学机械抛光工艺及相应纳米抛光液 |
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US6350693B2 (en) * | 1997-11-15 | 2002-02-26 | Taiwan Semiconductor Manufacturing Company | Method of CMP of polysilicon |
CN1232290A (zh) * | 1998-04-15 | 1999-10-20 | 世大积体电路股份有限公司 | 避免碟形凹陷的浅沟槽隔离方法 |
US6645825B1 (en) * | 2000-07-12 | 2003-11-11 | Taiwan Semiconductor Manufacturing Company | Planarization of shallow trench isolation (STI) |
US6589099B2 (en) * | 2001-07-09 | 2003-07-08 | Motorola, Inc. | Method for chemical mechanical polishing (CMP) with altering the concentration of oxidizing agent in slurry |
CN1731567A (zh) * | 2005-06-22 | 2006-02-08 | 中国科学院上海微***与信息技术研究所 | 集成电路铜互连一步化学机械抛光工艺及相应纳米抛光液 |
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WO2008058458A1 (fr) | 2008-05-22 |
CN101188197A (zh) | 2008-05-28 |
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