CN101521143B - Lining mechanism for semiconductor processing equipment and manufacturing method thereof - Google Patents
Lining mechanism for semiconductor processing equipment and manufacturing method thereof Download PDFInfo
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- CN101521143B CN101521143B CN 200810100895 CN200810100895A CN101521143B CN 101521143 B CN101521143 B CN 101521143B CN 200810100895 CN200810100895 CN 200810100895 CN 200810100895 A CN200810100895 A CN 200810100895A CN 101521143 B CN101521143 B CN 101521143B
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Abstract
The invention relates to a lining mechanism for semiconductor processing equipment, which at least comprises an inner ring lining layer and an outer ring lining layer. The inner ring lining layer and the outer ring lining layer are mutually connected in a way of muff coupling. As the lining mechanism adopts a split type, a light inner ring lining layer is only required to be changed during the machine maintenance each time, the operation is convenient, and the maintenance time is effectively saved. Simultaneously, silicon carbide (SiC) material avoids the introduced foreign metal impurity; andthe plasma etching prevention performance of SiC is excellent. Finally, black lead conversion is adopted for manufacturing SiC parts, thereby the manufacture flexibility of the parts is enhanced, the manufacturing cycle is shortened, and the manufacturing cost is reduced. The costs of ownership and consumption are obviously reduced. The lining mechanism can widely be applied to other semiconducto r processing equipment.
Description
Technical field
The present invention relates to a kind of lining and its manufacturing approach, particularly relate to a kind of lining mechanism and manufacturing approach thereof that is used for semiconductor manufacturing equipment.
Background technology
The visual plant that dry etching machine, ion implantor and chemical vapor deposition (CVD) are in the integrated circuit fabrication process to be used.In these several kinds of equipment, will be that main process gas feeds in the vacuum cavity with the halogen, and gas will be applied radiofrequency field to produce high-density plasma, as shown in fig. 1.But the corrosivity of the bombardment property of plasma and process gas is exposed to the processing chamber parts of plasma atmosphere with corrosion, thereby produces particle or metal impurities pollution, brings fatal influence to etching technics.For 12 cun equipment and dielectric etch equipment, importing radio-frequency power supply (RF) power is multiple and increases progressively, and the plasma etching problem that causes thus is even more serious.How minimizing this harmful effect, is one of subject matter that faces in the integrated circuit manufacturing equipment industry.
In the prior art, most Al that adopt
2O
3Anodic oxidation is as bush structure, and shown in Fig. 2 or Fig. 3, wherein the inboard of alloy matrix aluminum 101 is provided with Al
2O
3Liner layer 11.Although this technology maturation, cost are also lower, anti-plasma etching property is good inadequately.Adopt on the equipment of high-power RF at 12 cun equipment and other, the anodizing technology of aluminium alloy is substituted just gradually.
Also have a kind of technology to adopt Al
2O
3Or Y
2O
3Plasma spraying, also like Fig. 2 or shown in Figure 3, wherein the inboard of alloy matrix aluminum 1 is provided with Al
2O
3Or Y
2O
3Plasma spray layer 11.This kind technology is introduced metal impurities such as yttrium easily, although present spraying technology reaches its maturity simultaneously, and the still problem of often being complained of peeling off of particle.In addition, the high request of the technology and equipment of spraying has caused the expense of spraying parts higher.
And for example shown in Figure 1, lining 10 has constituted the etching environment of chip 20, and the contaminating impurity of its surfacing directly has influence on the yield of chip 20, the success or failure of decision technology.The conventional surface treatment process such as anodizing of aluminium or thermal spraying treatment, is all inevitably introduced metal impurities.Simultaneously, lining 10 needs periodic replacement as the maximum parts of contact plasma 100 contacts, is one of main expendable part.In addition, although can adopt the sintering or the chemical vapor deposition (CVD) mode plated film of carborundum (SiC), fabrication cycle is very long, and cost an arm and a leg, and can only make the part of some simple shape, and processing difficulties.Delivery date is often at 30 more than week.
In addition, existing other lining processing methods for example adopt sinter molding, and consequent metals content impurity is higher, is not suitable for making the part of complicated shape, need the expensive very long fine finishining in man-hour of cost simultaneously.And isostatic pressing method, consequent purity is lower, is difficult to simultaneously generate complicated shape, and the material anisotropy.
So, in the above-mentioned prior art, all have comparatively serious technological deficiency.Therefore the technological improvement aspect lining mechanism seems particularly necessary more for integrated circuit manufacturing equipment industry.
Summary of the invention
Technical problem to be solved by this invention is, overcomes the defective of above-mentioned prior art and provides a kind of impurity that can reduce liner to introduce, and increases the life-span of liner simultaneously, reduces the lining mechanism that board has cost.
For realizing above-mentioned purpose, the present invention takes following design:
A kind of lining mechanism that is used for semiconductor manufacturing equipment of the present invention; Said lining mechanism is arranged on the matrix inboard of semiconductor manufacturing equipment; Lining papers jacket layer and outer shroud liner layer two-layered liner in said lining mechanism comprises at least; Lining papers jacket layer and the mutual socket of outer shroud liner layer in said, and the lining papers jacket layer is made into integration in said; Wherein, said interior lining papers jacket layer comprises carbofrax material, and the lining papers jacket layer is generated through reaction by the graphite blank in this carborundum.
Preferably, the thickness of said graphite blank and/or interior lining papers jacket layer is 0.8-7mm.
Preferably, said outer shroud liner layer comprises aluminium oxide, or yittrium oxide, or the anodizing of aluminium layer, or the composition of above-mentioned material.The lining papers jacket layer also comprises silicon nitride material in said.
Another object of the present invention also is to provide a kind of manufacturing approach that is used for the lining mechanism of semiconductor manufacturing equipment, comprises the steps:
The graphite blank of lining papers jacket layer cooperatively interacted its size and outer shroud liner layer in A, processing were used to prepare; B, the graphite blank after the processing is fed the silica gas of capacity, and make the graphite blank under 1200～2000 ℃ temperature, react the interior lining papers jacket layer that generates carborundum, said interior lining papers jacket layer is made into integration; The interior lining papers jacket layer of C, socket carborundum and the outer shroud liner layer of aluminium oxide and/or yittrium oxide.
Preferably, the thickness of said in the method graphite blank is 0.8-7mm.The lining papers jacket layer can be changed after corrosive wear in said.
Advantage of the present invention is: because the present invention has split type lining mechanism, only need to change light interior ring so each board is safeguarded, handled easily has effectively been saved preventive maintenance time.Simultaneously, carborundum (SiC) material has been avoided the introducing of metal impurities; And the anti-plasma etching performance of SiC is more excellent.At last, adopt the graphite conversion to make the SiC part, increased the manufacturing flexibility of part, shortened the manufacturing cycle, reduced manufacturing cost.Thereby that has obviously reduced board has cost and a consuming cost.The present invention can be widely used in other semiconductor manufacturing equipments.
Description of drawings
Fig. 1 is the structural representation of semiconducter process equipment;
Fig. 2 is the sketch map of bush structure in the prior art;
Fig. 3 is the vertical view of Fig. 2;
Fig. 4 is the structural representation of an embodiment of the present invention;
Fig. 5 is the vertical view of Fig. 4.
Embodiment
Referring to Fig. 4 and Fig. 5, a kind of preferred embodiment that is used for the lining mechanism of semiconductor manufacturing equipment of the present invention shown in it comprises interior at least lining papers jacket layer 1 and outer shroud liner layer 2 two-layered liner; In this preferred embodiment, lining papers jacket layer 1 and outer shroud liner layer 2 two-layered liner in including, certainly; Also can be as required; Perhaps lining extent of deterioration, and be provided with two-layer above lining, wherein said in lining papers jacket layer 1 comprise carborundum (SiC) material; Wherein can also comprise a small amount of unreacted graphite material completely, and lining papers jacket layer 1 is generated by the reaction of graphite blank material in the said carborundum.The thickness of said graphite blank and/or interior lining papers jacket layer is 0.8-7mm, can be 0.8-7mm for graphite blank thickness behind the lining papers jacket layer 1 in reaction generates carborundum also; Socket each other between said interior lining papers jacket layer 1 of the present invention and the outer shroud liner layer 2, preferably, interior lining papers jacket layer 1 preferably can take out from outer shroud liner layer 2; Lining papers jacket layer 1 was easy to change, and need not to change outer shroud liner layer 2 and alloy matrix aluminum 101 after loss in this kind structure made; As shown in Figure 1; In use, lining mechanism of the present invention is arranged on the inboard of alloy matrix aluminum 101, lining mechanism promptly of the present invention does not comprise alloy matrix aluminum 101; Certainly, this matrix 101 also can be processed by other materials.In this preferred embodiment, the thickness of the said interior lining papers jacket layer 1 that is generated by the graphite blank is 0.8-7mm, and this kind design is in order under the situation that guarantees element precision, can to reduce the workload of post-production, stops surplus man-hour so add at the graphite blank; Simultaneously, graphite is the very strong material of fragility, thus when parts design, take into full account its machinability, so thinnest part can not be lower than 0.8mm; On the other hand; The present invention is to be lining papers jacket layer 1 in raw material is processed with the graphite material; Be that the graphite blank at high temperature feeds the silica gas (SiO) of capacity and generates the interior lining papers jacket layer 1 of carborundum, and this reaction to be SiO gas take place on graphite blank surface, be converted into lining papers jacket layer 1 in the carborundum fully in order to ensure whole graphite blank; So graphite blank thickness should not surpass 7mm.And preferably, said graphite blank is for being made into integration, so lining papers jacket layer 1 is also for being made into integration in making.
Like Fig. 4 or shown in Figure 5, said outer shroud liner layer 2 comprises aluminium oxide, or yittrium oxide, or the anodizing of aluminium layer, or the composition of above-mentioned material.Lining papers jacket layer 1 also can comprise silicon nitride material in said.
A kind of manufacturing approach that is used for the lining mechanism of semiconductor manufacturing equipment provided by the present invention; Comprise the steps: at first, the graphite blank of lining papers jacket layer 1 in processing is used to prepare, and the thickness that satisfies the graphite blank is 0.8-7mm; Simultaneously; Its overall dimensions and outer shroud liner layer 2 are cooperatively interacted, and after loss, can take off replacing; Then, the graphite blank after the processing is fed the silica gas (SiO) of capacity, and make the graphite blank under 1200～2000 ℃ temperature, react the interior lining papers jacket layer that generates carborundum (SiC); The reaction equation of said method is:
C (graphite, solid)+SiO (gas) → SiC (solid)+CO (gas)
At last, the interior lining papers jacket layer of socket carborundum and aluminium oxide and/or yittrium oxide (Al
2O
3And/or Y
2O
3) the outer shroud liner layer, form bush structure and be used for the equipment of semiconducter process.And the lining papers jacket layer can be changed after corrosive wear in said.
Obviously, those of ordinary skill in the art can constitute various types of lining mechanisms and manufacturing approach thereof with a kind of lining mechanism and manufacturing approach thereof that is used for semiconductor manufacturing equipment of the present invention.
The foregoing description only supplies to explain the present invention's usefulness; And be not to be limitation of the present invention; The those of ordinary skill in relevant technologies field without departing from the present invention, can also be made various variations and modification; Therefore all technical schemes that are equal to also should belong to category of the present invention, and scope of patent protection of the present invention should be limited each claim.
Claims (7)
1. lining mechanism that is used for semiconductor manufacturing equipment; It is characterized in that: said lining mechanism is arranged on the matrix inboard of semiconductor manufacturing equipment; Lining papers jacket layer (1) and outer shroud liner layer (2) two-layered liner in said lining mechanism comprises at least; Lining papers jacket layer (1) is made into integration in said, and lining papers jacket layer (1) and outer shroud liner layer (2) socket each other in said; Wherein
Lining papers jacket layer (1) comprises carbofrax material in said, and lining papers jacket layer (1) is generated through reaction by the graphite blank in this carborundum.
2. lining mechanism according to claim 1 is characterized in that: the thickness of said graphite blank and/or interior lining papers jacket layer (1) is 0.8-7mm.
3. lining mechanism according to claim 1 is characterized in that: said outer shroud liner layer (2) comprises aluminium oxide, or yittrium oxide, or the anodizing of aluminium layer, or the composition of above-mentioned material.
4. lining mechanism according to claim 1 is characterized in that: lining papers jacket layer (1) also comprises silicon nitride material in said.
5. a manufacturing approach that is used for the lining mechanism of semiconductor manufacturing equipment is characterized in that: comprise the steps:
The graphite blank of lining papers jacket layer cooperatively interacted its size and outer shroud liner layer in A, processing were used to prepare;
B, the graphite blank after the processing is fed the silica gas of capacity, and make the graphite blank under 1200～2000 ℃ temperature, react the interior lining papers jacket layer that generates carborundum, said interior lining papers jacket layer is made into integration;
The interior lining papers jacket layer of C, socket carborundum and the outer shroud liner layer of aluminium oxide and/or yittrium oxide.
6. manufacturing approach according to claim 5 is characterized in that: the thickness of said graphite blank is 0.8-7mm.
7. manufacturing approach according to claim 6 is characterized in that: the lining papers jacket layer can be changed after corrosive wear in said.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200810100895 CN101521143B (en) | 2008-02-25 | 2008-02-25 | Lining mechanism for semiconductor processing equipment and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200810100895 CN101521143B (en) | 2008-02-25 | 2008-02-25 | Lining mechanism for semiconductor processing equipment and manufacturing method thereof |
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| Publication Number | Publication Date |
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| CN101521143A CN101521143A (en) | 2009-09-02 |
| CN101521143B true CN101521143B (en) | 2012-12-26 |
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| CN103556222A (en) * | 2013-11-13 | 2014-02-05 | 英利集团有限公司 | Graphite heater and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2334544Y (en) * | 1998-07-03 | 1999-08-25 | 谢智庆 | Sleeve automatic releasing device |
| CN1440563A (en) * | 2000-06-30 | 2003-09-03 | 兰姆研究公司 | Semiconductor processing equipment having improved particle performance |
| CN1848376A (en) * | 2005-12-26 | 2006-10-18 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Semiconductor processing system reaction chamber |
| CN1906026A (en) * | 2003-12-18 | 2007-01-31 | 兰姆研究公司 | Yttria-coated ceramic components of semiconductor material processing apparatuses and methods of manufacturing the components |
-
2008
- 2008-02-25 CN CN 200810100895 patent/CN101521143B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2334544Y (en) * | 1998-07-03 | 1999-08-25 | 谢智庆 | Sleeve automatic releasing device |
| CN1440563A (en) * | 2000-06-30 | 2003-09-03 | 兰姆研究公司 | Semiconductor processing equipment having improved particle performance |
| CN1906026A (en) * | 2003-12-18 | 2007-01-31 | 兰姆研究公司 | Yttria-coated ceramic components of semiconductor material processing apparatuses and methods of manufacturing the components |
| CN1848376A (en) * | 2005-12-26 | 2006-10-18 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Semiconductor processing system reaction chamber |
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|---|---|
| CN101521143A (en) | 2009-09-02 |
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Address after: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100016 Beijing, Jiuxianqiao, East Road, No. 1, M5 floor, South floor, floor, layer two Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |