CN101512669B - 非易失性存储器***中的有缺陷区块隔离 - Google Patents
非易失性存储器***中的有缺陷区块隔离 Download PDFInfo
- Publication number
- CN101512669B CN101512669B CN2007800334227A CN200780033422A CN101512669B CN 101512669 B CN101512669 B CN 101512669B CN 2007800334227 A CN2007800334227 A CN 2007800334227A CN 200780033422 A CN200780033422 A CN 200780033422A CN 101512669 B CN101512669 B CN 101512669B
- Authority
- CN
- China
- Prior art keywords
- block
- latch
- defectiveness
- address date
- volatile memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/76—Masking faults in memories by using spares or by reconfiguring using address translation or modifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/08—Address circuits; Decoders; Word-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
- G11C29/816—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout for an application-specific layout
- G11C29/82—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout for an application-specific layout for EEPROMs
Landscapes
- Techniques For Improving Reliability Of Storages (AREA)
- Read Only Memory (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
Abstract
Description
Claims (17)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/470,945 US7561482B2 (en) | 2006-09-07 | 2006-09-07 | Defective block isolation in a non-volatile memory system |
US11/470,945 | 2006-09-07 | ||
PCT/US2007/019030 WO2008030377A2 (en) | 2006-09-07 | 2007-08-30 | Defective block isolation in a non-volatile memory system |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101512669A CN101512669A (zh) | 2009-08-19 |
CN101512669B true CN101512669B (zh) | 2013-03-06 |
Family
ID=39157762
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2007800334227A Active CN101512669B (zh) | 2006-09-07 | 2007-08-30 | 非易失性存储器***中的有缺陷区块隔离 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7561482B2 (zh) |
KR (1) | KR101498009B1 (zh) |
CN (1) | CN101512669B (zh) |
TW (1) | TWI467591B (zh) |
WO (1) | WO2008030377A2 (zh) |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7809900B2 (en) * | 2006-11-24 | 2010-10-05 | Sandforce, Inc. | System, method, and computer program product for delaying an operation that reduces a lifetime of memory |
US7904619B2 (en) | 2006-11-24 | 2011-03-08 | Sandforce, Inc. | System, method, and computer program product for reducing memory write operations using difference information |
US7747813B2 (en) * | 2006-11-24 | 2010-06-29 | Sandforce, Inc. | Multi-memory device system and method for managing a lifetime thereof |
US8316206B2 (en) | 2007-02-12 | 2012-11-20 | Marvell World Trade Ltd. | Pilot placement for non-volatile memory |
US7904672B2 (en) | 2006-12-08 | 2011-03-08 | Sandforce, Inc. | System and method for providing data redundancy after reducing memory writes |
KR100885783B1 (ko) * | 2007-01-23 | 2009-02-26 | 주식회사 하이닉스반도체 | 플래시 메모리 장치 및 동작 방법 |
US7903486B2 (en) | 2007-11-19 | 2011-03-08 | Sandforce, Inc. | System, method, and computer program product for increasing a lifetime of a plurality of blocks of memory |
US7849275B2 (en) | 2007-11-19 | 2010-12-07 | Sandforce, Inc. | System, method and a computer program product for writing data to different storage devices based on write frequency |
JP2009146548A (ja) * | 2007-12-18 | 2009-07-02 | Toshiba Corp | 不揮発性半導体記憶装置 |
US8102705B2 (en) * | 2009-06-05 | 2012-01-24 | Sandisk Technologies Inc. | Structure and method for shuffling data within non-volatile memory devices |
US8027195B2 (en) * | 2009-06-05 | 2011-09-27 | SanDisk Technologies, Inc. | Folding data stored in binary format into multi-state format within non-volatile memory devices |
US20110002169A1 (en) * | 2009-07-06 | 2011-01-06 | Yan Li | Bad Column Management with Bit Information in Non-Volatile Memory Systems |
US8516166B2 (en) * | 2009-07-20 | 2013-08-20 | Lsi Corporation | System, method, and computer program product for reducing a rate of data transfer to at least a portion of memory |
US8400854B2 (en) * | 2009-09-11 | 2013-03-19 | Sandisk Technologies Inc. | Identifying at-risk data in non-volatile storage |
US8468294B2 (en) * | 2009-12-18 | 2013-06-18 | Sandisk Technologies Inc. | Non-volatile memory with multi-gear control using on-chip folding of data |
US8725935B2 (en) | 2009-12-18 | 2014-05-13 | Sandisk Technologies Inc. | Balanced performance for on-chip folding of non-volatile memories |
US8144512B2 (en) | 2009-12-18 | 2012-03-27 | Sandisk Technologies Inc. | Data transfer flows for on-chip folding |
US9104580B1 (en) * | 2010-07-27 | 2015-08-11 | Apple Inc. | Cache memory for hybrid disk drives |
TWI467593B (zh) * | 2010-09-06 | 2015-01-01 | Fugu Tech Entpr Co Ltd | 用於一非揮發性記憶體陣列之標記方法及初始化方法 |
CN102592680B (zh) * | 2011-01-12 | 2015-04-08 | 北京兆易创新科技股份有限公司 | 一种存储芯片的修复装置和方法 |
US9342446B2 (en) | 2011-03-29 | 2016-05-17 | SanDisk Technologies, Inc. | Non-volatile memory system allowing reverse eviction of data updates to non-volatile binary cache |
US8446772B2 (en) | 2011-08-04 | 2013-05-21 | Sandisk Technologies Inc. | Memory die self-disable if programmable element is not trusted |
CN102543213B (zh) * | 2011-12-31 | 2014-07-30 | 大连现代高技术集团有限公司 | Eeprom芯片的数据检错方法 |
US8732391B2 (en) | 2012-04-23 | 2014-05-20 | Sandisk Technologies Inc. | Obsolete block management for data retention in nonvolatile memory |
US8681548B2 (en) | 2012-05-03 | 2014-03-25 | Sandisk Technologies Inc. | Column redundancy circuitry for non-volatile memory |
US9490035B2 (en) | 2012-09-28 | 2016-11-08 | SanDisk Technologies, Inc. | Centralized variable rate serializer and deserializer for bad column management |
US8897080B2 (en) | 2012-09-28 | 2014-11-25 | Sandisk Technologies Inc. | Variable rate serial to parallel shift register |
US9076506B2 (en) | 2012-09-28 | 2015-07-07 | Sandisk Technologies Inc. | Variable rate parallel to serial shift register |
TWI550624B (zh) * | 2014-12-16 | 2016-09-21 | Memory data control method | |
US10032524B2 (en) | 2015-02-09 | 2018-07-24 | Sandisk Technologies Llc | Techniques for determining local interconnect defects |
CN110895630B (zh) * | 2018-09-12 | 2022-06-07 | 长鑫存储技术有限公司 | 晶圆堆叠方法及装置、存储介质和电子设备 |
US11094357B2 (en) * | 2019-05-07 | 2021-08-17 | Micron Technology, Inc. | Memory devices with user-defined tagging mechanism |
US10930327B1 (en) * | 2020-01-27 | 2021-02-23 | Micron Technology, Inc. | Memory read masking |
JP2021140555A (ja) * | 2020-03-06 | 2021-09-16 | 本田技研工業株式会社 | 半導体装置とその制御方法 |
JP7500458B2 (ja) * | 2021-02-16 | 2024-06-17 | キオクシア株式会社 | 不揮発性半導体記憶装置及びその動作方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1134017C (zh) * | 1996-09-05 | 2004-01-07 | 冲电气工业株式会社 | 具有待测的半导体存储电路的半导体器件 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7447069B1 (en) * | 1989-04-13 | 2008-11-04 | Sandisk Corporation | Flash EEprom system |
JP2575919B2 (ja) | 1990-03-22 | 1997-01-29 | 株式会社東芝 | 半導体記憶装置の冗長回路 |
GB9614551D0 (en) | 1996-07-11 | 1996-09-04 | Memory Corp Plc | Memory system |
JP2003022693A (ja) | 2001-07-09 | 2003-01-24 | Mitsubishi Electric Corp | 半導体メモリ |
JP2003077293A (ja) * | 2001-08-31 | 2003-03-14 | Toshiba Corp | 半導体装置 |
US7159141B2 (en) * | 2002-07-01 | 2007-01-02 | Micron Technology, Inc. | Repairable block redundancy scheme |
US7171536B2 (en) | 2002-10-28 | 2007-01-30 | Sandisk Corporation | Unusable block management within a non-volatile memory system |
US7336536B2 (en) * | 2004-06-25 | 2008-02-26 | Micron Technology, Inc. | Handling defective memory blocks of NAND memory devices |
TWI295021B (en) * | 2004-12-10 | 2008-03-21 | Infortrend Technology Inc | Storage system and method for handling bad storage device data therefor |
JP2006185535A (ja) * | 2004-12-28 | 2006-07-13 | Nec Electronics Corp | 半導体記憶装置 |
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2006
- 2006-09-07 US US11/470,945 patent/US7561482B2/en active Active
-
2007
- 2007-08-30 CN CN2007800334227A patent/CN101512669B/zh active Active
- 2007-08-30 KR KR1020097004782A patent/KR101498009B1/ko not_active IP Right Cessation
- 2007-08-30 WO PCT/US2007/019030 patent/WO2008030377A2/en active Application Filing
- 2007-09-06 TW TW96133311A patent/TWI467591B/zh not_active IP Right Cessation
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1134017C (zh) * | 1996-09-05 | 2004-01-07 | 冲电气工业株式会社 | 具有待测的半导体存储电路的半导体器件 |
Also Published As
Publication number | Publication date |
---|---|
TW200832426A (en) | 2008-08-01 |
KR20090073094A (ko) | 2009-07-02 |
KR101498009B1 (ko) | 2015-03-11 |
US20080062761A1 (en) | 2008-03-13 |
WO2008030377A2 (en) | 2008-03-13 |
CN101512669A (zh) | 2009-08-19 |
TWI467591B (zh) | 2015-01-01 |
WO2008030377A3 (en) | 2008-07-10 |
US7561482B2 (en) | 2009-07-14 |
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PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: SANDISK TECHNOLOGY CORPORATION Free format text: FORMER OWNER: SANDISK CO., LTD. Effective date: 20121029 |
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Effective date of registration: 20121029 Address after: American Texas Applicant after: Sandisk Corp. Address before: American California Applicant before: Sandisk Corp. |
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Address after: American Texas Patentee after: DELPHI INT OPERATIONS LUX SRL Address before: American Texas Patentee before: Sandisk Corp. |