CN101499438B - Translucent thin-film solar cell module and manufacturing method thereof - Google Patents
Translucent thin-film solar cell module and manufacturing method thereof Download PDFInfo
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Abstract
The invention discloses a transmission-typed thin-film solar cell module and a manufacturing method thereof. The manufacturing method firstly forms a bidirectional cutting channel in a first electrode material layer on a non-transparent substrate, so the problem of short circuit which is caused by the follow-up high-temperature laser cutting process can be avoided, and consequently the process yield is influenced. In addition, the transmission-typed thin-film solar cell module has a hole which passes through the non-transparent substrate; therefore, the transmission rate of the cell is improved.
Description
Technical field
The present invention relates to a kind of solar cell (photovoltaic) module and manufacture method thereof, and be particularly related to a kind of translucent thin-film solar cell module and manufacture method thereof.
Background technology
Solar energy be a kind of have never exhaust and the free of contamination energy, when solving pollution that present fossil energy faced and problem of shortage, be the focus that attracts most attention always.Wherein, can be electric energy directly with solar cell (solar cell) again, and become present considerable research topic solar energy converting.
At present, in solar cell market, use the battery of monocrystalline silicon and polysilicon to account for more than 90 of percentage.But these solar cells need about 150 microns to the 350 microns silicon of used thickness as material, and its cost is higher.Moreover, because it is the raw material of solar cell adopt high-quality silicon wafer ingot, because of the obvious growth of use amount, day by day not enough in recent years.Therefore, the research and development of thin-film solar cells (thinfilm solar cell) are to become new developing direction.And thin-film solar cells has low cost, easily large tracts of land production, and advantage such as modularization technology is simple.
Please refer to Fig. 1, it is the schematic diagram that illustrates known a kind of film solar battery module.Film solar battery module 150 comprises glass substrate 152, transparency electrode 154, photoelectric conversion layer 156 and metal electrode 158.Wherein, transparency electrode 154 is disposed on the glass substrate 152.Photoelectric conversion layer 156 is that the mode with corresponding transparency electrode 154 offsets one distance is disposed on the transparency electrode 154.In addition, metal electrode 158 is that the mode with corresponding photoelectric conversion layer 156 offsets one distance is disposed on the photoelectric conversion layer 156, and contacts with the transparency electrode 154 of below.In film solar battery module 150, photoelectric conversion layer normally piles up the structure that forms p-i-n by p N-type semiconductor N, intrinsic (intrinsic) semiconductor, n N-type semiconductor N, light is gone into to shine by glass substrate 152 belows, it is right to see through photoelectric conversion layer 156 absorption generation electronics and hole, via internal electric field electronics is formed voltage and electric current with the hole to separating, transfer to load via lead again and use.In order to promote the efficient of battery, known film solar module 150 can be made pyramid (pyramid) structure or coarse grooveization (textured) structure (not illustrating) with the surface of transparency electrode 154, to reduce the reflection of light amount.Photoelectric conversion layer uses amorphous (amorphous) silicon thin film usually; but because its energy gap is usually between 1.7 to 1.8eV; can only absorbing wavelength less than the sunlight of 800nm; in order to increase the utilization of light; usually can pile up one deck crystallite (micro-crystalline or nano-crystalline) silicon thin film again; form stacked (tandem) solar cell of p-i-n/p-i-n; the energy gap of microcrystal silicon usually between 1.1 to 1.2eV, can absorbing wavelength less than the sunlight of 1100nm.
In early days, involving great expense and making difficultly of solar cell and only can be applied in the special dimensions such as space.Now, the application of solar cell can extend to general private residence, high building building, even camper, portable mini-bar, can utilize the characteristic at large everywhere utilization of its convertible sunlight for electric energy.But above the application-specific, silicon wafer solar cells also is not suitable at some, and the glass curtain of light transmission for example need be arranged, and combines building (building integratedphotovoltaic, application BIPV) with other solar cells.Translucent thin-film solar battery (thin film solar cell ofsee-through type) has advantages such as energy-conservation and attractive in appearance in the middle of these are used, and more meets the demand that human nature is lived.
At present, the existing correlation technique that discloses about the translucent thin-film solar Battery And Its Manufacturing Methods on some United States Patent (USP)s.
At United States Patent (USP) the 6th, 858, in No. 461 (US 6,858,461 B2), a kind of solar module (" PARTIALLY TRANSPARENT PHOTOVOLATICMODULES ") of partially transparent is proposed.As shown in Figure 2, solar module 110 comprises transparency carrier 114, transparency conducting layer 118, backplate 122 and the photoelectric conversion layer between transparency conducting layer 118 and metal electrode 122.Similarly, light can be shone into by transparency carrier 114 belows.In this solar module 110, can utilize laser cutting (laser scribing) mode to remove part metals electrode 122 and photoelectric conversion layer, and form at least one groove (groove) 140, so that solar module 110 can reach the purpose of part printing opacity.But, because laser cutting method is at high temperature to carry out, therefore makes metal electrode 122 produce metallic particles or fusion easily and be deposited in groove inside, cause upper and lower electric pole short circuit (short); Perhaps the amorphous silicon photoelectric conversion layer produces crystallization again at trenched side-wall under high temperature, forms the microcrystal silicon of low resistance, makes leakage current increase, and then influences the efficient of process yield (yield) and solar cell.On the other hand, can make pyramid structure or coarse groove surface texture usually,, so when light is shone into by transparency carrier 114 belows, can produce scattering, fail effectively to improve to cause light transmittance to promote the efficient of battery on transparency conducting layer 118 surfaces.
Hold above-mentionedly, reach the light transmittance of a certain degree, then need more metal electrode and photoelectric conversion layer and divested in order to make solar cell.Please refer to table 1, it is the product specification of the multiple translucent thin-film battery of Japanese MakMax TAIYO KOGYO company.As shown in Table 1,, clearly need remove quite large-area metal electrode and photoelectric conversion layer, make maximum output, efficient and fill up coefficient (fill factor FF) can descend thus in order to improve light transmittance.
Table 1
| Model | KN-38? | KN-45? | KN-60? |
| Size (mm) | 980×950 | 980×950 | 980×950 |
| Light transmittance (%) | 10? | 5? | ＜1? |
| Maximum output (W) | 38.0? | 45.0? | 58.0? |
| Vpm(V)? | 58.6? | 64.4? | 68.0? |
| Ipm(A)? | 0.648? | 0.699? | 0.853? |
| Voc(V)? | 91.8? | 91.8? | 91.8? |
| Isc(A)? | 0.972? | 1.090? | 1.140? |
| Efficient (%) | 4.1? | 4.8? | 6.2? |
| FF? | 0.43? | 0.45? | 0.55? |
In addition, United States Patent (USP) the 4th, 795, No. 500 (US 4795500) propose a kind of solar cell device (" PHOTOVOLATIC DEVICE ").As shown in Figure 3, solar cell device comprises transparency carrier 1, transparency conducting layer 3, photoelectric conversion layer 4, metal electrode 5 and photoresist 8.This solar cell device in metal electrode 5 and photoelectric conversion layer 4, or even be included in the transparency conducting layer 3, can form hole (hole) 6, to reach the purpose of printing opacity.Yet this patent need use gold-tinted technology, and its relevant device is quite expensive, so can increase cost.And, if this patent uses the laser cutting mode with direct formation hole 6, then can cause metallic particles to pollute and short circuit problem equally, and influence process yield.
Summary of the invention
In view of this, purpose of the present invention is providing a kind of translucent thin-film solar cell module and manufacture method thereof exactly, can improve the light transmittance of battery module, and can avoid the problem of short circuit that already known processes causes and leakage current, and then can improve process yield and solar battery efficiency.
The present invention proposes a kind of manufacture method of translucent thin-film solar cell module.At first, on opaque substrate, form first electrode material layer.Then, remove part first electrode material layer, with form first electrode material layer can be separated into a plurality of band electrode material layers and many articles the one Y direction Cutting Roads, and many first directions X Cutting Roads that intersect at a Y direction Cutting Road, make first electrode material layer be separated into a plurality of block first electrode of first comb-type electrode and two-dimensional arrangements.Then, form photoelectric conversion layer, cover opaque substrate, first electrode and part first comb-type electrode.Subsequently, remove the part photoelectric conversion layer, to form many articles the 2nd Y direction Cutting Roads of opposing parallel the one Y direction Cutting Road in first electrode top.Afterwards, form second electrode material layer, cover photoelectric conversion layer, first electrode and opaque substrate.Continue it, remove part second electrode material layer and part photoelectric conversion layer, expose many articles the 3rd Y direction Cutting Roads of first electrode surface with formation, and in the first directions X Cutting Road, form many second directions X Cutting Roads, expose this opaque substrate, make second electrode material layer be separated into a plurality of block second electrode of second comb-type electrode and two-dimensional arrangements.Afterwards, remove the opaque substrate that part second directions X Cutting Road and the 3rd Y direction Cutting Road are exposed, in opaque substrate, to form a plurality of holes.Photoelectric conversion layer coats first electrode around hole.
In the manufacture method of above-mentioned translucent thin-film solar cell module, removing the part photoelectric conversion layer when forming the 2nd Y direction Cutting Road, also be included in and form many articles the 3rd directions X Cutting Roads in the first directions X Cutting Road.First, second, third Y direction Cutting Road and first, second, third directions X Cutting Road are to utilize the laser cutting mode to prepare.And first electrode material layer of above-mentioned translucent thin-film solar cell module is an including transparent conducting oxide layer, and its material for example is zinc oxide, tin ash, tin indium oxide or indium oxide.First electrode material layer also can be a metal level, and its material for example is aluminium, silver, copper, molybdenum or other metal or alloy that is fit to.Photoelectric conversion layer is single layer structure or stack layer structure.The material of photoelectric conversion layer for example is amorphous silicon and alloy, cadmium sulfide, copper indium callium diselenide (CIGS), copper indium two selenium, cadmium telluride or organic material.Second electrode material layer is an including transparent conducting oxide layer, and its material for example is zinc oxide, tin ash, tin indium oxide or indium oxide.
The present invention proposes a kind of translucent thin-film solar cell module in addition, and it has many batteries that are one another in series, and is disposed on the opaque substrate.Between these batteries, have a plurality of holes that run through this opaque substrate.Translucent thin-film solar cell module comprises first electrode, second electrode and photoelectric conversion layer.Wherein, first electrode is configured on the opaque substrate, and first electrode is made up of a plurality of block first electrode of first comb-type electrode and two-dimensional arrangements.Second electrode is configured in first electrode top, and second electrode is made up of a plurality of block second electrode of second comb-type electrode and two-dimensional arrangements, and second comb-type electrode and aforementioned block second electrode are stated first block type electrode, partly opaque substrate or aforementioned hole before exposing part each other.Above-mentioned, second comb-type electrode and first comb-type electrode are to dispose in left and right sides mode, and first block type electrode and second block type electrode are to dispose in the translation mode.In addition, photoelectric conversion layer is disposed between first electrode and second electrode.Photoelectric conversion layer is made up of a plurality of photoelectric conversion material layers of two-dimensional arrangements.Coat first electrode around this hole of photoelectric conversion layer.
First electrode of above-mentioned translucent thin-film solar cell module is an including transparent conducting oxide layer, and its material for example is zinc oxide, tin ash, tin indium oxide or indium oxide.First electrode also can be a metal level, and its material for example is aluminium, silver, copper, molybdenum or other metal or alloy that is fit to.Photoelectric conversion layer is single layer structure or stack layer structure.The material of photoelectric conversion layer for example is amorphous silicon and alloy, cadmium sulfide, copper indium callium diselenide (CIGS), copper indium two selenium, cadmium telluride or organic material.In addition, second electrode is an including transparent conducting oxide layer, and its material for example is zinc oxide, tin ash, tin indium oxide or indium oxide.
The present invention proposes a kind of manufacture method of translucent thin-film solar cell module again.At first, on opaque substrate, form first electrode material layer.Then, remove part first electrode material layer, first electrode material layer can be separated into many articles the one Y direction Cutting Roads of a plurality of band electrode material layers to form, and a plurality of first directions X cutting windows that are two-dimensional arrangements, make first electrode material layer become a plurality of first window type electrodes.Then, form photoelectric conversion layer, to cover the first window type electrode and opaque substrate.Subsequently, remove the part photoelectric conversion layer, to form many articles the 2nd Y direction Cutting Roads of opposing parallel the one Y direction Cutting Road in first window type electrode top.Afterwards, on photoelectric conversion layer, form second electrode material layer.Continue it, remove part second electrode material layer and part photoelectric conversion layer, expose many articles the 3rd Y direction Cutting Roads of the first window type electrode surface with formation, and in each first directions X cutting window, form one second directions X cutting window, make second electrode material layer become a plurality of second window type electrodes that expose opaque substrate.Afterwards, remove second directions X cutting this opaque substrate that window exposed, in this opaque substrate, to form a plurality of holes.Coat first electrode around this hole of photoelectric conversion layer.
In the manufacture method of above-mentioned translucent thin-film solar cell module,, can further in first directions X cutting window, form many articles the 3rd directions Xs cutting windows in removing this photoelectric conversion layer of part when forming the 2nd Y direction Cutting Road.
In the manufacture method of above-mentioned translucent thin-film solar cell module, first, second, third Y direction Cutting Road and first, second, third directions X cutting window are to utilize the laser cutting mode to prepare.And first electrode material layer of above-mentioned translucent thin-film solar cell module is an including transparent conducting oxide layer, and its material for example is zinc oxide, tin ash, tin indium oxide or indium oxide.First electrode material layer also can be a metal level, and its material for example is aluminium, silver, copper, molybdenum or other metal or alloy that is fit to.Photoelectric conversion layer is single layer structure or stack layer structure.The material of photoelectric conversion layer for example is amorphous silicon and alloy, cadmium sulfide, copper indium callium diselenide (CIGS), copper indium two selenium, cadmium telluride or organic material.Second electrode material layer is an including transparent conducting oxide layer, and its material for example is zinc oxide, tin ash, tin indium oxide or indium oxide.
The present invention reintroduces a kind of translucent thin-film solar cell module, and it has many batteries that are one another in series and are connected in parallel to each other in the Y direction at directions X, and has a plurality of perforations that run through opaque substrate between these batteries.Translucent thin-film solar cell module comprises opaque substrate, first electrode, second electrode and photoelectric conversion layer.Wherein, opaque substrate has a plurality of holes.First electrode is configured on the opaque substrate, and first electrode is made up of a plurality of block first window shape electrodes.The aforementioned block first window shape electrode has a plurality of first cutting windows corresponding to aforementioned hole place.Second electrode is configured in first electrode top, and second electrode is made up of a plurality of block second window shape electrodes.The aforementioned block second window shape electrode has a plurality of second cutting windows, and to cut the window place corresponding and constitute aforementioned perforation jointly with aforementioned hole and aforementioned first for it.The aforesaid second window type electrode and the first window type electrode are to dispose in the translation mode.In addition, photoelectric conversion layer is disposed between first electrode and second electrode.Photoelectric conversion layer is made up of a plurality of window shape photoelectric conversion material layers.Coat first electrode around this hole of photoelectric conversion layer.
First electrode of above-mentioned translucent thin-film solar cell module is an including transparent conducting oxide layer, and its material for example is zinc oxide, tin ash, tin indium oxide or indium oxide.First electrode also can be a metal level, and its material for example is aluminium, silver, copper, molybdenum or other metal or alloy that is fit to.Photoelectric conversion layer is single layer structure or stack layer structure.The material of photoelectric conversion layer for example is amorphous silicon and alloy, cadmium sulfide, copper indium callium diselenide (CIGS), copper indium two selenium, cadmium telluride or organic material.In addition, second electrode is an including transparent conducting oxide layer, and its material for example is zinc oxide, tin ash, tin indium oxide or indium oxide.
Translucent thin-film solar cell module of the present invention and manufacture method thereof, when making first electrode, form the Cutting Road or the cutting window of two directions simultaneously, therefore can make prepared translucent thin-film solar cell module can not have the laser cutting parameter of Yin Gaowen and cause the problem of short circuit and leakage current, and then can improve process yield and solar battery efficiency.In addition, compared to known translucent thin-film solar cell module, translucent thin-film solar cell module of the present invention has a plurality of perforations that run through opaque substrate, can not make pyramid structure or coarse structure because of the transparent oxide electrode surface, cause light scattering, therefore can greatly improve the light transmittance of element.
For above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, preferred embodiment cited below particularly, and conjunction with figs. are described in detail below.
Description of drawings
Fig. 1 is the schematic diagram that illustrates known a kind of film solar battery module.
Fig. 2 is the schematic diagram that illustrates known a kind of solar module.
Fig. 3 is the schematic diagram that illustrates known a kind of solar cell device.
Fig. 4 to Fig. 9 is the schematic flow sheet according to the manufacture method of the translucent thin-film solar cell module that embodiments of the invention illustrated.Wherein, the subgraph 4 (a) of Fig. 4 to 8,5 (a), 6 (a), 7 (a), 8 (a) illustrate to look schematic diagram, and subgraph 4 (b), 5 (b), 6 (b), 7 (b), 8 (b) are the generalized sections that illustrates along hatching I-I '; The subgraph 9 (a) and 9 of Fig. 9 (a ') illustrate on two kinds of different embodiment and look schematic diagram, subgraph 9 (b) and subgraph 9 (b ') are the generalized sections of two kinds of different embodiment being illustrated along hatching I-I ', and subgraph 9 (c) is the generalized section that illustrates along hatching II-II '.
Figure 10 to Figure 15 is the schematic flow sheet according to the manufacture method of the translucent thin-film solar cell module that another embodiment of the present invention illustrated.Wherein, the subgraph 10 (a) of Figure 10 to 15,11 (a), 12 (a), 13 (a), 14 (a), 15 (a) illustrate to look schematic diagram, and subgraph 10 (b), 11 (b), 12 (b), 13 (b), 14 (b), 15 (b) are the generalized sections that illustrates along hatching I-I '; The subgraph 11 (c) of Figure 11 to 15,12 (c), 13 (c), 14 (c), 15 (c) are the generalized sections that illustrates along hatching II-II '.
Description of reference numerals
1,114,402,502: opaque substrate 3,118: transparency conducting layer
4,156: photoelectric conversion layer 5,158: metal electrode
6: hole 8: photoresist
110: solar module 122: backplate
140: groove 150: film solar battery module
152: 154: the first electrodes of glass substrate
400,500: translucent thin-film solar cell module
401,501: battery 404,418,504,520: electrode material layer
406,416,420,506,514,522:Y direction Cutting Road
408,422:X direction Cutting Road 410,424,424 ', 426 ': block type electrode
412,426: comb-type electrode 414,512: photoelectric conversion layer
425: connecting portion 450,550: hole
460,560: light 470,570: the first electrodes
480,580: the second electrodes 510,526: window type electrode
508,516,524: cutting window 555: perforation
Embodiment
Fig. 4 to Fig. 9 is the schematic flow sheet according to the manufacture method of the translucent thin-film solar cell module that one embodiment of the invention illustrated.Wherein, the subgraph of Fig. 4 to Fig. 9 (a), (a ') be respectively to illustrate to look schematic diagram, subgraph (b) and subgraph (b ') be the generalized section that illustrates along hatching I-I ', subgraph (c) is the generalized section that illustrates along hatching II-II '.
At first, please refer to Fig. 9 (a), Fig. 9 (b), Fig. 9 (b ') and Fig. 9 (c), the translucent thin-film solar cell module 400 of present embodiment is made up of 401 of plurality of batteries connected in series (cell).These batteries 401 are made up of first electrode 470, photoelectric conversion layer 414 and second electrode 480.These batteries 401 are arranged in array.Separate with directions X Cutting Road 422,408 between a plurality of batteries 401 of row and row; Then separate between a plurality of batteries 401 of row and row by Y direction Cutting Road 420 and Y direction Cutting Road 406.
In other words, directions X Cutting Road 408,422 can be separated into ordered series of numbers with first electrode 470 and second electrode 480, exposes opaque substrate 402.420 of Y direction Cutting Roads are split into number with 480 separations of second electrode and go, and it exposes first electrode 470 of part and the opaque substrate 402 of part.406 of Y direction Cutting Roads are split into number with 470 separations of first electrode and go, and expose opaque substrate 402.And, have a plurality of holes 450 that run through two surperficial 402a and 402b in the opaque substrate 402 that directions X Cutting Road 422 and Y direction Cutting Road 420 are exposed.
More particularly, translucent thin-film solar cell module 400 comprise opaque substrate 402 and be disposed at its top first electrode 470, photoelectric conversion layer 414 and second electrode 480.Wherein, first electrode 470 is directly to be configured on the opaque substrate 402, and it is made up of with a plurality of block type electrodes 410 of two-dimensional arrangements to the comb-type electrode 412 that Cutting Road 408 and Y direction Cutting Road 406 are cut out X.The material of first electrode 470 is transparent conductive oxide film or metal level.The material of TCO for example is zinc oxide (ZnO), tin ash (SnO
2), tin indium oxide (ITO) or indium oxide (In
2O
3).The material of metal level for example is aluminium (Al), silver (Ag), molybdenum (Mo), copper (Cu) or other metal or alloy that is fit to.
In addition, photoelectric conversion layer 414 is to be disposed between first electrode 470 and second electrode 480, and photoelectric conversion layer 414 is made up of a plurality of photoelectric conversion material layers of two-dimensional arrangements.Photoelectric conversion layer 414 can be single layer structure or stack layer structure.The material of photoelectric conversion layer 414 for example is amorphous silicon and alloy thereof, cadmium sulfide (CdS), copper indium callium diselenide (CIGS) (CuInGaSe
2, CIGS), copper indium two selenium (CuInSe
2, CIS), the sandwich construction that piles up of cadmium telluride (CdTe), organic material or above-mentioned material.
In above-mentioned Cutting Road, the Y direction Cutting Road 406 that is used for cutting apart first electrode 470 is covered by the photoelectric conversion layer 414 and second electrode 480.420 of Y direction Cutting Roads that are used for cutting apart second electrode 480 expose first electrode 470 and the opaque substrate 402 of part.Be used for cutting apart the directions X Cutting Road 408 of first electrode 470 and be used for cutting apart the position of Y direction Cutting Road 422 of second electrode 480 corresponding and expose opaque substrate 402.
It should be noted that especially that in the present invention directions X Cutting Road 422,406 and Y direction Cutting Road 420 not only expose opaque substrate 402, and also have a plurality of holes 450 that run through two surperficial 402a and 402b in the opaque substrate 402 that is exposed.
These holes 440 are in the size of the surperficial 402a of opaque substrate 402, with its size that extends through surperficial 402b can be identical as or inequality.For example, it is big that the size of these holes 440 can be that the surperficial 402a of never transparency carrier 402 extends to the change gradually of surperficial 402b, or diminish gradually.In addition, the pattern of the hole 440 on the opaque substrate 402 is also without particular limitation, and its pattern on opaque substrate 402 surperficial 402a and 402b can present various shapes, as circular, square, rectangle, triangle, polygonal etc., or is irregular.
Because the translucent thin-film solar cell module 400 of present embodiment has in the directions X Cutting Road 422,406 that can expose opaque substrate 402 and Y direction Cutting Road 420 and the opaque substrate 402 and has a plurality of holes 450, therefore, when light (sunlight) is entered by second electrode, 480 irradiations of opaque substrate 402 surperficial 402a tops, can pass through the hole in directions X Cutting Road 422 and Y direction Cutting Road 420 and the opaque substrate 402, and make translucent thin-film solar cell module 400 reach higher light transmission features.Compared to known translucent thin-film solar cell module, the translucent thin-film solar cell module 400 of present embodiment can greatly improve the light transmittance of element.
On the other hand, shown in Fig. 9 (c), owing to first electrode can be coated by photoelectric conversion layer 414, when therefore forming directions X Cutting Road 422, the laser cutting parameter of high temperature can't make that second electrode produced was residual and contact with first electrode, and then cause short circuit (short) problem; Perhaps the amorphous silicon photoelectric conversion layer produces crystallization again at trenched side-wall under high temperature, forms the microcrystal silicon of low resistance, makes leakage current increase, and then influences the efficient of process yield (yield) and solar cell.
Below, describe the manufacture method of the translucent thin-film solar cell module 400 of present embodiment in detail with Fig. 4 to Fig. 9.
At first, please refer to Fig. 4 (a) and Fig. 4 (b), opaque substrate 402 is provided.The material of this opaque substrate 402 for example is sheet metal, plastic substrate, ceramic substrate or other suitable opaque materials.Or other suitable opaque materials.Then, on opaque substrate 402, form electrode material layer 404.Electrode material layer 404 is transparent conductive oxide (TCO) film or metal level.The material of TCO for example is zinc oxide (ZnO), tin ash (SnO
2), tin indium oxide (ITO) or indium oxide (In
2O
3).The material of metal level for example is aluminium (Al), silver (Ag), molybdenum (Mo), copper (Cu) or other metal or alloy that is fit to.The formation method of electrode material layer 404 for example is to utilize chemical vapour deposition technique (CVD method), sputtering method (sputtering method) or other suitable methods to prepare.
Certainly,, also can carry out coarse grooveization (textured) surface treatment, to reduce the reflection of light amount to electrode material in order to promote the efficient of battery.The coarse groove surface is comprehended to make and is caused rough surface to make light produce scattering (scattering); reduce reflection of incident light; with the travel distance of increase incident light in photoelectric conversion layer, it can make the surface of electrode material V-shape groove, pyramid (pyramid) structure (not illustrating) or contrary pyramid usually.
Then, please refer to Fig. 5 (a) and Fig. 5 (b), remove partial electrode material layer 404, to form many Y direction Cutting Roads 406 and many directions X Cutting Roads 408 that intersect these Y direction Cutting Roads 406.Wherein, when only forming Y direction Cutting Road 406, electrode material layer 404 can be separated into a plurality of band electrode material layers (not illustrating).After forming Y direction Cutting Road 406 and directions X Cutting Road 408, can make electrode material layer 404 be separated into a plurality of block type electrodes 410 of comb-type electrode 412 and two-dimensional arrangements, to constitute first electrode 470 of battery module.Hold above-mentionedly, the formation method of Y direction Cutting Road 406 and directions X Cutting Road 408 for example is to utilize laser cutting (laser scribing) technology to remove partial electrode material layer 404 and form.
Afterwards, please refer to Fig. 6 (a) and Fig. 6 (b), above opaque substrate 402, form one deck photoelectric conversion layer 414.This photoelectric conversion layer 414 can cover opaque substrate 402, block type electrode 410 and part comb-type electrode 412.Photoelectric conversion layer 414 can be single layer structure or stack layer structure.The material of photoelectric conversion layer 414 for example is amorphous silicon and alloy thereof, cadmium sulfide (CdS), copper indium callium diselenide (CIGS) (CuInGaSe
2, CIGS), copper indium two selenium (CuInSe
2, CIS), the sandwich construction that piles up of cadmium telluride (CdTe), organic material or above-mentioned material.The formation method of photoelectric conversion layer 414 for example is to utilize chemical vapour deposition technique, sputtering method or other suitable methods to prepare.In addition, be noted that above-mentioned amorphous silicon alloy is meant, in amorphous silicon, add hydrogen atom (H), fluorine atom (F), chlorine atom (Cl), germanium atom (Ge), oxygen atom (O), carbon atom (C) or nitrogen-atoms atoms such as (N).If in amorphous silicon, add hydrogen atom, fluorine atom, chlorine atom, can repair the defective in the silicon thin film, and obtain preferable membrane quality; If in amorphous silicon, add germanium atom, the silicon thin film energy gap is diminished, absorb the sunray of longer wavelength; If in amorphous silicon, add oxygen atom, carbon atom, nitrogen-atoms, then can make the silicon thin film energy gap become big, absorb the sunray of shorter wavelength.
Then, please refer to Fig. 7 (a) and Fig. 7 (b), remove part photoelectric conversion layer 414, to form many Y direction Cutting Roads 416.These Y direction Cutting Road 416 opposing parallel Y direction Cutting Roads 406 and expose the below block type electrode 410.Above-mentioned, the formation method of Y direction Cutting Road 416 for example is to utilize laser cutting parameter to remove part photoelectric conversion layer 414 and form.
Subsequently, please refer to Fig. 8 (a) and Fig. 8 (b), above opaque substrate 402, form one deck electrode material layer 418.This electrode material layer 418 can cover photoelectric conversion layer 414, electrode 410 and opaque substrate 402.Electrode material layer 418 is transparent conductive oxide (TCO) film.The material of TCO for example is zinc oxide (ZnO), tin ash (SnO
2), tin indium oxide (ITO) or indium oxide (In
2O
3).The formation method of electrode material layer 418 for example is to utilize chemical vapour deposition technique, sputtering method or other suitable methods to prepare.
Continue it, please refer to Fig. 9 (a), Fig. 9 (b), Fig. 9 (b ') and Fig. 9 (c), forms many Y direction Cutting Roads 420 and intersect at many directions X Cutting Roads 422 of these Y direction Cutting Roads 420.In one embodiment, Y direction Cutting Road 420 disconnects electrode material layer 418 along the Y direction, and directions X Cutting Road 422 disconnects electrode material layer 418 along directions X, make electrode material layer 418 be separated into a plurality of block type electrodes 424 of comb-type electrode 426 and two-dimensional arrangements, to constitute second electrode 480 of battery module.In another embodiment, Y direction Cutting Road 420 disconnects electrode material layer 418, and directions X Cutting Road 422 does not disconnect electrode material layer 418, shown in Fig. 9 (a '), and electrode material layer 418 is separated into a plurality of block type electrodes 424 and block type electrode 426 ', to constitute second electrode 480 of battery module.In other words, directions X Cutting Road 422 does not disconnect electrode material layer 418, but make in a plurality of block type electrodes 424 of the two-dimensional arrangements among Fig. 9 (a), a plurality of block type electrodes 424 side by side on the Y direction also see through connecting portion 425 and electrically connect, and the comb section of comb-type electrode 426 also sees through connecting portion 425 ' and connects, with pie graph 9 respectively (a ') in block type electrode 424 ' and 426 '.The shape of connecting portion 425 and quantity are not exceeded with graphic, and it can be various shape or quantity, all are the scopes that the present invention is contained as long as directions X Cutting Road 422 does not disconnect electrode material layer 418.Directions X Cutting Road 422 is, removes partial electrode material layer 418 and part photoelectric conversion layer 414 in the directions X Cutting Road 408, forms to exposing opaque substrate 402 surfaces.In addition, Y direction Cutting Road 420 is by removing the partial electrode material layer 418 in the Y direction Cutting Road 416, to form until exposing electrode 410 and opaque substrate 402 surfaces.
In another embodiment, shown in Fig. 9 (b '), Y direction Cutting Road 420 can also be, removes partial electrode material layer 418 and photoelectric conversion layer 414, until exposing electrode 410 surfaces, and is formed at 416 offsets place of relative Y direction Cutting Road.Similarly, Y direction Cutting Road 420 can utilize laser cutting parameter with directions X Cutting Road 422, removes partial electrode material layer 418 and forms with part photoelectric conversion layer 414.
Afterwards, in the opaque substrate 402 that directions X Cutting Road 422 and Y direction Cutting Road 420 are exposed, form a plurality of holes 450.The pattern of these holes 450 is also without particular limitation, and the pattern on opaque substrate 402 surperficial 402a and 402b can present various shapes, as circular, square, rectangle, polygonal, channel form etc., or is irregular.In addition, never the surperficial 402a of transparency carrier 402 extend through the size of these holes 450 of surperficial 402b can be identical or inequality.For example can be that size that the surperficial 402a of never transparency carrier 402 extends to these holes 450 of surperficial 402b becomes big gradually or diminishes.The method that forms hole 450 for example is to use laser cutting method, utilizes its high temperature that substrate is removed, and can also use etching mode to remove substrate.
Hold above-mentionedly, after each step on carry out, can finish the translucent thin-film solar cell module 400 of present embodiment.In use, light (sunlight) the 460th shines in from second electrode 480, and the light of part absorbs via the photoelectric conversion layer 414 of each battery 401, produces the opto-electronic conversion effect, to produce voltage; The light 460 of another part then passes directions X Cutting Road 422 and Y direction Cutting Road 420, by the hole 450 of opaque substrate 402, arrives opaque substrate 402 surperficial 402b places again.
In addition, the translucent thin-film solar cell module 400 of present embodiment also can utilize other modes to prepare.Hold above-mentioned, when forming Y direction Cutting Road 416 (shown in Fig. 7 (a) and Fig. 7 (b)) in the photoelectric conversion layer 414, can form many directions X Cutting Roads (not illustrating) of vertical Y direction Cutting Road 416 in the lump, so that photoelectric conversion layer 414 becomes a plurality of block photoelectric conversion layers (not illustrating).Next, follow-up step is same as the previously described embodiments, does not give unnecessary details in this.
The present invention still has other enforcement kenel except the foregoing description.
Figure 10 to Figure 15 is the schematic flow sheet according to the manufacture method of the translucent thin-film solar cell module that another embodiment of the present invention illustrated.Wherein, the subgraph of Figure 10 to Figure 15 (a) is to illustrate to look schematic diagram, and subgraph (b) is the generalized section that illustrates along hatching I-I ', and subgraph (c) is the generalized section that illustrates along hatching H-II '.In Figure 10 to Figure 15, the member identical with Fig. 4 to Fig. 9 omits the explanation that may repeat.
At first, please refer to Figure 15 (a), Figure 15 (b) and Figure 15 (c), the translucent thin-film solar cell module 500 of present embodiment has many batteries 501 that are one another in series and are connected in parallel to each other in the Y direction at directions X.And, between these batteries 501, have many directions X cutting windows 524 that expose opaque substrate 502.When light (sunlight) 560 is shone into by opaque substrate 502 tops, can cut window 524 by directions X, and make translucent thin-film solar cell module 500 reach the purpose of printing opacity.
First electrode 570, second electrode 580 and photoelectric conversion layer 512 that translucent thin-film solar cell module 500 comprises opaque substrate 502 and is disposed at its top.Wherein, opaque substrate 502 has a plurality of holes 550.First electrode 570 is directly to be configured on the opaque substrate 502, and it is made up of the polylith window shape electrode 510 with a plurality of cutting windows 508 that is arranged in parallel.First electrode 570 is transparent conductive oxide film or metal level.The material of TCO for example is zinc oxide (ZnO), tin ash (SnO
2), tin indium oxide (ITO) or indium oxide (In
2O
3).The material of metal level for example is aluminium (Al), silver (Ag), molybdenum (Mo), copper (Cu) or other metal or alloy that is fit to.Second electrode 580 is to be configured in first electrode, 570 tops, and it is made up of the polylith window shape electrode 526 with a plurality of cutting windows 524 that is arranged in parallel.And window type electrode the 510, the 526th disposes in the translation mode.Second electrode 580 is a transparent conductive oxide film.The material of TCO for example is zinc oxide (ZnO), tin ash (SnO
2), tin indium oxide (ITO) or indium oxide (In
2O
3).In addition, photoelectric conversion layer 512 is to be disposed between first electrode 570 and second electrode 580, and photoelectric conversion layer 512 is made up of a plurality of window shape photoelectric conversion material layers with a plurality of cutting windows 516 that are arranged in parallel.Photoelectric conversion layer 512 can be single layer structure or stack layer structure.The material of photoelectric conversion layer 512 for example is amorphous silicon and alloy thereof, cadmium sulfide (CdS), copper indium callium diselenide (CIGS) (CuInGaSe
2, CIGS), copper indium two selenium (CuInSe
2, CIS), the sandwich construction that piles up of cadmium telluride (CdTe), organic material or above-mentioned material.Cutting window 516 is with cutting window 508 and cut window 524 all corresponding to a plurality of holes 550 of opaque substrate 502, therefore, can constitute a plurality of perforations 555.The shape of perforation 555 is also without particular limitation, and it can be various shape, as circular, square, rectangle, polygonal, or irregular etc.
These holes 550 extend through the size of surperficial 502b in the size of the surperficial 502a of opaque substrate 502 with it, can be identical as or inequality.For example, it is big that the size of these holes 550 can be that the surperficial 502a of never transparency carrier 502 extends to the change gradually of surperficial 502b, or diminish gradually.In addition, the pattern of the hole 550 on the opaque substrate 502 is also without particular limitation, and its pattern on opaque substrate 502 surperficial 502a and 502b can present various shapes, as circular, square, rectangle, polygonal etc., or is irregular.
Because the translucent thin-film solar cell module 500 of present embodiment has a plurality of perforations 555, it can make battery module increase light transmittance.Therefore, compared to known translucent thin-film solar cell module, the translucent thin-film solar cell module of present embodiment can greatly improve the light transmittance of element.In addition; shown in Figure 15 (c); because first electrode 570 can be coated by photoelectric conversion layer 512; therefore can avoid when forming directions X cutting window 524; the laser cutting parameter of high temperature can make second electrode 580 produce metallic particles or fusion and contact with first electrode 570 and to cause short circuit and leakage problem, and then influences the efficient of process yield and solar cell.
Below, describe the manufacture method of the translucent thin-film solar cell module 500 of present embodiment in detail with Figure 10 to Figure 15.
At first, please refer to Figure 10 (a) and Figure 10 (b), opaque substrate 502 is provided.The material of this opaque substrate 502 for example is sheet metal, plastic substrate, ceramic substrate or other suitable opaque materials.Then, on opaque substrate 502, form electrode material layer 504.Electrode material layer 504 is transparent conductive oxide film or metal level.The material of TCO for example is zinc oxide (ZnO), tin ash (SnO
2), tin indium oxide (ITO) or indium oxide (In
2O
3).The material of metal level for example is aluminium (Al), silver (Ag), molybdenum (Mo), copper (Cu) or other metal or alloy that is fit to.
Then, please refer to Figure 11 (a), Figure 11 (b) and Figure 11 (c), in electrode material layer 504, formation can be separated into electrode material layer 504 many Y direction Cutting Roads 506 of a plurality of band electrode material layers, and many directions X cutting windows 508 that are two-dimensional arrangements.Y direction Cutting Road 506 can become electrode material layer 504 polylith window type electrode 510 with directions X cutting window 508.
Then, please refer to Figure 12 (a), Figure 12 (b) and Figure 12 (c), above opaque substrate 502, form one deck photoelectric conversion layer 512.This photoelectric conversion layer 512 can cover opaque substrate 502 and window type electrode 510.
Afterwards, please refer to Figure 13 (a), Figure 13 (b) and Figure 13 (c), remove part photoelectric conversion layer 512, to form many Y direction Cutting Roads 514 and many directions X cutting windows 516.Wherein, many Y direction Cutting Roads 514 are to be formed at window type electrode 510 tops, and opposing parallel Y direction Cutting Road 506; Directions X cutting window 516 is to be formed in the directions X cutting window 508, and is two-dimensional arrangements.
In this process, can also remove part photoelectric conversion layer 512, and only form many Y direction Cutting Roads 514, but not form the directions X cutting window 516 of Figure 13 (a), Figure 13 (b) and Figure 13 (c).The figure of the foregoing description is not illustrated in this, because of its for haveing the knack of these those skilled in the art as can be known.
Continue it, please refer to Figure 14 (a), Figure 14 (b) and Figure 14 (c), above opaque substrate 502, form one deck electrode material layer 520.This electrode material layer 520 can cover photoelectric conversion layer 512, window type electrode 510 and opaque substrate 502.Electrode material layer 520 is transparent conductive oxide (TCO) film.The material of TCO for example is zinc oxide (ZnO), tin ash (SnO
2), tin indium oxide (ITO) or indium oxide (In
2O
3).
Subsequently, please refer to Figure 15 (a), Figure 15 (b) and Figure 15 (c), form many Y direction Cutting Roads 522 and many directions X cutting windows 524, so that electrode material layer 520 becomes a plurality of window type electrodes 526.Wherein, Y direction Cutting Road 522 is by removing partial electrode material layer 520 and part photoelectric conversion layer 512, forming until exposing exit window type electrode 510 surfaces to the open air.Directions X cutting window 524 is by removing the partial electrode material layer 520 in the directions X cutting window 516, exposes the opaque substrate 502 of below and forms.
Hold above-mentionedly, if previous step is rapid for only forming many Y direction Cutting Roads 514, then directions X cutting window 524 needs to form to remove partial electrode material layer 520 in the directions X cutting window 516 and part photoelectric conversion layer 512 in this process.
Then, remove the opaque substrate 502 that directions X cutting window 516 is exposed, to form the hole 550 that runs through two surperficial 502a, 502b therein.A plurality of holes 550 of opaque substrate 502, corresponding with cutting window 516 with cutting window 508 and cutting window 524, and constitute a plurality of perforations 555.The method that forms hole 550 for example is to use laser cutting method, utilizes its high temperature that substrate is removed, and can also use etching mode to remove substrate.
After each step on carry out, can finish the translucent thin-film solar cell module 500 of a plurality of perforations 555 of having of present embodiment.
In sum, translucent thin-film solar cell module of the present invention and manufacture method thereof, when making first electrode, form the Cutting Road or the cutting window of two directions simultaneously, therefore can make prepared translucent thin-film solar cell module can not have the laser cutting parameter of Yin Gaowen and cause the problem of short circuit and leakage current, and influence process yield and solar battery efficiency.In addition, compared to known translucent thin-film solar cell module, translucent thin-film solar cell module of the present invention has the opening that can expose opaque substrate, can greatly improve the light transmittance of battery module.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; those skilled in the art without departing from the spirit and scope of the present invention, when can doing a little change and retouching, so protection scope of the present invention is when looking being as the criterion that accompanying Claim defines.
Claims (37)
1. the manufacture method of a translucent thin-film solar cell module comprises:
On opaque substrate, form first electrode material layer;
Remove this first electrode material layer of part, to form many articles the one Y direction Cutting Roads that this first electrode material layer are separated into a plurality of band electrode material layers, and many first directions X Cutting Roads that intersect at a Y direction Cutting Road, make this first electrode material layer be separated into a plurality of first block type electrodes of first comb-type electrode and two-dimensional arrangements;
Form photoelectric conversion layer, cover this opaque substrate, this first electrode and this first comb-type electrode of part;
Remove this photoelectric conversion layer of part, to form many articles the 2nd Y direction Cutting Roads of opposing parallel the one Y direction Cutting Road in this first electrode top;
Form second electrode material layer, cover this photoelectric conversion layer, this first electrode and this opaque substrate;
Remove this second electrode material layer of part and this photoelectric conversion layer of part, expose many articles the 3rd Y direction Cutting Roads of this first block type electrode surface and this opaque substrate surface with formation, and in this first directions X Cutting Road, form many second directions X Cutting Roads, expose this opaque substrate, make this second electrode material layer be separated into a plurality of second block type electrodes of second comb-type electrode and two-dimensional arrangements; And
Remove this opaque substrate that this second directions X Cutting Road of part and the 3rd Y direction Cutting Road are exposed, to form a plurality of holes in this opaque substrate, this photoelectric conversion layer coats this first electrode around this hole.
2. the manufacture method of translucent thin-film solar cell module as claimed in claim 1 wherein removing this photoelectric conversion layer of part when forming the 2nd Y direction Cutting Road, also is included in and forms many articles the 3rd directions X Cutting Roads in this first directions X Cutting Road.
3. the manufacture method of translucent thin-film solar cell module as claimed in claim 2, wherein the 3rd directions X Cutting Road is to utilize the laser cutting mode to prepare.
4. the manufacture method of translucent thin-film solar cell module as claimed in claim 1, wherein this first, second, third Y direction Cutting Road and this first, second directions X Cutting Road are to utilize the laser cutting mode to prepare.
5. the manufacture method of translucent thin-film solar cell module as claimed in claim 1, wherein this first electrode material layer is including transparent conducting oxide layer or metal level.
6. the manufacture method of translucent thin-film solar cell module as claimed in claim 5, wherein the material of this including transparent conducting oxide layer comprises zinc oxide, tin ash, tin indium oxide or indium oxide; The material of metal level comprises aluminium, silver, copper, molybdenum or its alloy.
7. the manufacture method of translucent thin-film solar cell module as claimed in claim 1, wherein this photoelectric conversion layer is single layer structure or stack layer structure.
8. the manufacture method of translucent thin-film solar cell module as claimed in claim 1, wherein the material of this photoelectric conversion layer comprises amorphous silicon and alloy, cadmium sulfide, copper indium callium diselenide (CIGS), copper indium two selenium, cadmium telluride or organic material.
9. the manufacture method of translucent thin-film solar cell module as claimed in claim 1, wherein this second electrode material layer is an including transparent conducting oxide layer.
10. the manufacture method of translucent thin-film solar cell module as claimed in claim 9, wherein the material of this including transparent conducting oxide layer comprises zinc oxide, tin ash, tin indium oxide or indium oxide.
11. the manufacture method of translucent thin-film solar cell module as claimed in claim 9, the method that wherein forms this hole in this opaque substrate comprises laser cutting method or etching method.
12. the manufacture method of translucent thin-film solar cell module as claimed in claim 1 wherein connects with a plurality of connecting portions respectively between a plurality of comb sections of this second comb-type electrode and between Y direction this second block type electrode side by side.
13. a translucent thin-film solar cell module, it has many cell arrangement being one another in series on opaque substrate, has a plurality of holes that run through this opaque substrate between this battery, and this module comprises:
This opaque substrate has this hole;
First electrode is configured on this opaque substrate, and this first electrode is made up of a plurality of first block type electrodes of first comb-type electrode and two-dimensional arrangements;
Second electrode, be configured in this first electrode top, and this second electrode is made up of most block second electrode of second comb-type electrode and two-dimensional arrangements, this second comb-type electrode and this bulk second electrode expose this first block type electrode of part, this opaque substrate of part or this hole each other
Wherein this second comb-type electrode and this first comb-type electrode are to dispose in left and right sides mode, and this first, second block type electrode is to dispose in the translation mode; And
Photoelectric conversion layer is disposed between this first electrode and this second electrode, and this photoelectric conversion layer is made up of a plurality of photoelectric conversion material layers of two-dimensional arrangements, and this photoelectric conversion layer coats this first electrode around this hole.
14. translucent thin-film solar cell module as claimed in claim 13, wherein this first electrode is including transparent conducting oxide layer or metal level.
15. translucent thin-film solar cell module as claimed in claim 14, wherein the material of this including transparent conducting oxide layer comprises zinc oxide, tin ash, tin indium oxide or indium oxide; The material of this metal level comprises aluminium, silver, copper, molybdenum or its alloy.
16. translucent thin-film solar cell module as claimed in claim 13, wherein this photoelectric conversion layer is single layer structure or stack layer structure.
17. translucent thin-film solar cell module as claimed in claim 13, wherein the material of this photoelectric conversion layer comprises amorphous silicon and alloy, cadmium sulfide, copper indium callium diselenide (CIGS), copper indium two selenium, cadmium telluride or organic material.
18. translucent thin-film solar cell module as claimed in claim 13, wherein this second electrode is an including transparent conducting oxide layer.
19. translucent thin-film solar cell module as claimed in claim 18, wherein the material of including transparent conducting oxide layer comprises zinc oxide, tin ash, tin indium oxide or indium oxide.
20. translucent thin-film solar cell module as claimed in claim 18 wherein connects with a plurality of connecting portions respectively between a plurality of comb sections of this second comb-type electrode and between Y direction this second block type electrode side by side.
21. the manufacture method of a translucent thin-film solar cell module comprises:
On opaque substrate, form first electrode material layer;
Remove this first electrode material layer of part, to form many articles the one Y direction Cutting Roads that this first electrode material layer are separated into a plurality of band electrode material layers, and be many first directions Xs cutting windows of two-dimensional arrangements with a Y direction Cutting Road, make this first electrode material layer become a plurality of first window type electrodes;
Form photoelectric conversion layer, to cover this first window type electrode and this opaque substrate;
Remove this photoelectric conversion layer of part, to form a plurality of the 2nd Y direction Cutting Roads of opposing parallel the one Y direction Cutting Road in this first window type electrode top;
On this photoelectric conversion layer, form second electrode material layer; And
Remove this second electrode material layer of part and this photoelectric conversion layer of part, expose many articles the 3rd Y direction Cutting Roads of this first window type electrode surface with formation, and form second directions X cutting window that exposes this opaque substrate in this first directions X cutting window in each, make this second electrode material layer become a plurality of second window type electrodes; And
Remove this second directions X cutting this opaque substrate that window exposed, to form a plurality of holes in this opaque substrate, this photoelectric conversion layer coats this first electrode around this hole.
22. the manufacture method of translucent thin-film solar cell module as claimed in claim 21, wherein remove this photoelectric conversion layer of part when forming the 2nd Y direction Cutting Road, also comprising: in this first directions X cutting window, forming many articles the 3rd directions Xs cutting windows.
23. the manufacture method of translucent thin-film solar cell module as claimed in claim 21, wherein this first, second, third Y direction Cutting Road and this first, second, third directions X cutting window is to utilize the laser cutting mode to prepare.
24. the manufacture method of translucent thin-film solar cell module as claimed in claim 21, wherein this first electrode material layer is including transparent conducting oxide layer or metal level.
25. the manufacture method of translucent thin-film solar cell module as claimed in claim 24, wherein the material of this including transparent conducting oxide layer comprises zinc oxide, tin ash, tin indium oxide or indium oxide; The material of this metal level comprises aluminium, silver, copper, molybdenum or its alloy.
26. the manufacture method of translucent thin-film solar cell module as claimed in claim 21, wherein this photoelectric conversion layer is single layer structure or stack layer structure.
27. the manufacture method of translucent thin-film solar cell module as claimed in claim 21, wherein the material of this photoelectric conversion layer comprises amorphous silicon and alloy, cadmium sulfide, copper indium callium diselenide (CIGS), copper indium two selenium, cadmium telluride or organic material.
28. the manufacture method of translucent thin-film solar cell module as claimed in claim 21, wherein this second electrode material layer is an including transparent conducting oxide layer.
29. the manufacture method of translucent thin-film solar cell module as claimed in claim 28, wherein the material of this including transparent conducting oxide layer comprises zinc oxide, tin ash, tin indium oxide or indium oxide.
30. the manufacture method of translucent thin-film solar cell module as claimed in claim 21, the method that wherein forms this hole in this opaque substrate comprises laser cutting method or etching method.
31. a translucent thin-film solar cell module, it has many batteries that are one another in series and are connected in parallel to each other in the Y direction at directions X, and has a plurality of perforations that run through opaque substrate between this battery, and this module comprises:
This opaque substrate has a plurality of holes;
First electrode is configured on this opaque substrate, and this first electrode is made up of a plurality of block first window shape electrodes, and this bulk first window shape electrode has a plurality of first cutting windows corresponding to this hole place;
Second electrode, be configured in this first electrode top, and this second electrode is made up of a plurality of block second window shape electrodes, this bulk second window shape electrode has a plurality of second cutting windows, it is corresponding with this hole and this first cutting window place and constitute this perforation jointly, and wherein this second window type electrode and this first window type electrode are to dispose in the translation mode; And
Photoelectric conversion layer is disposed between this first electrode and this second electrode, and this photoelectric conversion layer is made up of a plurality of window shape photoelectric conversion material layers, and this photoelectric conversion layer coats this first electrode around this hole.
32. translucent thin-film solar cell module as claimed in claim 31, wherein this first electrode is including transparent conducting oxide layer or metal level.
33. translucent thin-film solar cell module as claimed in claim 32, wherein the material of this including transparent conducting oxide layer comprises zinc oxide, tin ash, tin indium oxide or indium oxide; The material of this metal level comprises aluminium, silver, copper, molybdenum or its alloy.
34. translucent thin-film solar cell module as claimed in claim 31, wherein this photoelectric conversion layer is single layer structure or stack layer structure.
35. translucent thin-film solar cell module as claimed in claim 31, wherein the material of this photoelectric conversion layer comprises amorphous silicon and alloy, cadmium sulfide, copper indium callium diselenide (CIGS), copper indium two selenium, cadmium telluride or organic material.
36. translucent thin-film solar cell module as claimed in claim 31, wherein this second electrode is an including transparent conducting oxide layer.
37. translucent thin-film solar cell module as claimed in claim 36, wherein the material of this including transparent conducting oxide layer comprises zinc oxide, tin ash, tin indium oxide or indium oxide.
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| CN111538190B (en) * | 2020-05-19 | 2022-04-26 | Tcl华星光电技术有限公司 | Color film substrate and liquid crystal display |
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| US4795500A (en) * | 1985-07-02 | 1989-01-03 | Sanyo Electric Co., Ltd. | Photovoltaic device |
| US5254179A (en) * | 1991-02-21 | 1993-10-19 | Solems S.A. | Photovoltaic device and solar module having a partial transparency |
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