CN101483335A - Highly integrated battery protection circuit - Google Patents
Highly integrated battery protection circuit Download PDFInfo
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- CN101483335A CN101483335A CNA2009100284958A CN200910028495A CN101483335A CN 101483335 A CN101483335 A CN 101483335A CN A2009100284958 A CNA2009100284958 A CN A2009100284958A CN 200910028495 A CN200910028495 A CN 200910028495A CN 101483335 A CN101483335 A CN 101483335A
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Abstract
The present invention relates to a battery protection circuit particularly relates to high integration density battery protection circuit with a switch protection tube that can automatically break the connection between a battery and a charger when over-charge, over-discharge, over-current. The invention comprises a master switch tube, a master switch tube grid control circuit, a master switch tube substrate control circuit, an alteration countermeasure circuit, a status initialization circuit and a section converting circuit and all are integrated on one same semi-conductor substrate. The battery protection scheme provided in the invention can not only decrease scheme area greatly, chip cost is reduced and packaging cost is lowered as well as printed circuit board cost without yield cost, and real low cost and high integration density is realized.
Description
Technical field
The present invention relates to battery protecting circuit, relate in particular to and have the highly integrated battery protection circuit that overcharges, cuts off automatically when overdischarge, overcurrent the protection switch pipe that battery is connected with charger.
Background technology
Secondary cells such as lithium battery because overcharge, abnormality such as overdischarge, overcurrent and rapid deterioration influences battery life.Usually protect under these abnormalities damage by battery protecting apparatus to battery.
Present battery protecting apparatus mainly is to realize by the traditional battery protection control chip 092 and the method for external discharge switch 093 and charge switch 094 shown in Fig. 1 embodiment.This device needs 092,2 switching tube 095 of 1 battery protection controller (in order to reduce internal resistance, normally two NMOS pipes are integrated in the same chip), 2 outer meeting resistances and 1 external capacitor.This device needs many peripheral components, and not only the scheme area is bigger, and takies more printed circuit board (PCB) (PCB), makes that the PCB cost is higher, adds controller 0 and 2 switching tubes not in same chip, needs 2 packaging costs.Segmentation scheme is also arranged at present shown in Fig. 2 embodiment, in order to reduce peripheral components quantity, reduce the scheme area, reduce total packaging cost, controller chip 092 and 2 peripheral switching tube 095 Chip Packaging are become a chip 096 together with multicore sheet encapsulation technology.Though this scheme is reduced to once encapsulation with twice encapsulation, reduced packaging cost to a certain extent, but two chips come from different technology, different producers, wherein the inefficacy of any one chip will cause the inefficacy of entire product, even another chip is a non-defective unit.Thereby this scheme has increased the yield cost.Though this scheme scheme area decreases, total cost might not reduce.
Summary of the invention
In view of the above problems, the object of the invention provide a kind of can the protection exception state under the low cost damaged of battery and the highly integrated battery protection circuit of high integration.
The technical solution adopted for the present invention to solve the technical problems is: a kind of highly integrated battery protection circuit is characterized in that: comprise a termination battery, the main switch of a termination load or charger; Unusually send the main switch grid control circuit that disconnects the main switch signal according to the charge or discharge of battery; Has main switch substrate control circuit along with main switch state automatic switchover main switch underlayer voltage; Be used for reducing the anti-change countermeasure circuit that connects the damage of battery of power supply change and charger; Guarantee that highly integrated battery protection circuit enters the state initializing circuit of correct detected state when initially connecing battery; Realize the section translation circuit that 0V battery charge or 0V battery charge are forbidden according to different battery requirements.
Further: described main switch is an isolated form NMOS pipe or PMOS pipe, and its substrate and Semiconductor substrate are isolated.
Further: described main switch, main switch grid control circuit, main switch substrate control circuit, power supply change countermeasure circuit, state initializing circuit and section translation circuit all are arranged on on the semi-conductive substrate.
Further: described main switch grid control circuit comprises reference voltage generating circuit, the testing circuit that overcharges, overdischarge testing circuit, overcurrent sensing circuit, built-in time of delay are provided with circuit, short-circuit detecting circuit, charger testing circuit, level shift circuit and temperature protection circuit.The negative voltage lifting that described charger testing circuit has the negative voltage terminal is a positive voltage, realizes the voltage lifting circuit of the comparison between positive voltage.
Further: described main switch substrate control circuit has minimum voltage decision circuitry, abnormality decision circuitry, substrate switching switch circuit and level shift circuit.
Again further: described change countermeasure circuit has the filter circuit that is connected described highly integrated battery protection circuit external voltage input source and described highly integrated battery protection circuit internal supply voltage end, also has the charger reverse-connection protection circuit that is connected negative voltage terminal and described highly integrated battery protection circuit negative internal voltage test side.
Again further: described state initializing circuit has allows described highly integrated battery protection circuit enter the electrify restoration circuit of normal operating state when highly integrated battery protection circuit initially powers on.
Again further: described section translation circuit has can be by 0 volt of cell voltage comparison circuit of fusible safe silk programming.
Further: the negative voltage lifting that described charger testing circuit has the negative voltage terminal is a positive voltage, realizes the voltage lifting circuit of the comparison between positive voltage.
The present invention relates to highly integrated battery protection circuit; relate in particular to and have the highly integrated battery protection circuit that overcharges, cuts off automatically when overdischarge, overcurrent the protection switch pipe that battery is connected with charger; also will overcharge switch and overdischarge switch of this circuit is reduced to a main switch and is integrated in on the semi-conductive substrate with other circuit of realizing battery protection, is applied to the battery protection scheme and only needs a peripheral components.As shown in Figure 3, control circuit 099, main switch 103, resistance R 1 and R2 are integrated in same chip 100.
Fig. 3 example of the present invention can be expanded shown in figure four embodiment, has: main switch 103, main switch grid control circuit 101, main switch substrate control circuit 102, change countermeasure circuit 098.Main switch grid control circuit 101 detects the abnormality of batteries, sends signal and disconnects described main switch 103, simultaneously by the automatically switch substrate biasing of described main switch 103 of main switch substrate control circuit 102.Such main switch 103 can replace original charge switch 094 and discharge switch 093, and this main switch places same semi-conductive substrate with grid control circuit and the substrate control circuit of controlling this switching tube.
In addition, the invention is characterized in the damage that has when change countermeasure circuit 098 reduces the power supply change and charger is counter connects battery.
According to the present invention on semi-conductive substrate integrated described main switch 103, main switch grid control circuit 101, main switch substrate control circuit 102, change countermeasure circuit 098, only need connect 1 electric capacity in the periphery and can form the battery protection scheme.Because the present invention is kept to a main switch 103 with original two switching tubes 095, and described main switch 103 all is integrated on the same substrate with other circuit, chip area dwindles greatly than the chip area that the controller chip in the traditional scheme adds two switching tubes, and it is interior even littler finally can be encapsulated into a minimum encapsulation SOT23-5.Moreover, because main switch integrated makes peripheral components R1 in the traditional scheme, R2 also can be integrated in the chip, and therefore final peripheral components has only needed a device of C1.Reduced the final scheme area greatly.On cost, both, reduced chip area chip cost because dwindling, because dwindling, package area reduced packaging cost again, and the integrated final scheme area that makes of peripheral components dwindles, thereby reduced the printed circuit board (PCB) cost, it is last because main switch and other circuit all are integrated in on the semi-conductive substrate, come from same manufacturing process, can not go out in the described scheme of phenomenon Fig. 2 two together from the Chip Packaging of different manufacturing process, because wherein the bad yield Cheng Mu that causes whole proposal to lose efficacy of any one chip has realized real low-cost high integration.
The other additional function: power supply change countermeasure circuit can reduce power supply change and the anti-damage that connects battery of charger; The state initializing circuit guarantees that well described battery protection enters correct detected state when initially connecing battery.
Description of drawings
The present invention is further described below in conjunction with drawings and Examples.
Fig. 1 is that conventional batteries protective device one is implemented the square frame pie graph
Fig. 2 is another enforcement square frame pie graph of conventional batteries protective device
Fig. 3 is the square frame pie graph of battery protecting apparatus one embodiment of the present invention
Fig. 4 is the square frame pie graph (control circuit of outstanding main switch) of battery protecting apparatus one embodiment of the present invention
Fig. 5 is the detailed square frame pie graph of battery protecting apparatus internal implementation example of the present invention
Fig. 6 is that section translation circuit of the present invention is implemented the square frame pie graph
Fig. 7 is that charging testing circuit of the present invention is implemented the square frame pie graph
Fig. 8 is the profile (main switch is the N type pipe of isolating) that battery protecting apparatus of the present invention is integrated in same P type semiconductor substrate
Fig. 9 is the profile (main switch is a P type pipe) that battery protecting apparatus of the present invention is integrated in same P type semiconductor substrate
Among the figure: the battery protection ic that 091 load of 090 battery or charger 092 are traditional
093 discharge switch, 094 charge switch
095 charge switch and discharge switch are combined into being collectively referred to as together
096 multicore sheet encapsulation technology with battery protection ic controller and charge and discharge switch package in a chip
098 change countermeasure circuit
099 control circuit
100 highly integrated battery protection circuits, 101 main switch grid control circuits
102 main switch substrate control circuit
111 reference voltage generating circuits, 112 delay circuits, 113 short-circuit detecting circuits
114 overcharge testing circuit 115 logical circuits 116 puts testing circuit excessively
117 excess temperature testing circuits, 118 overcurrent sensing circuits, 119 level shift circuits
120 charging testing circuits, 121 abnormal state detection circuit
122 minimum voltage testing circuits, 123 substrate diverter switches, 124 level shift circuits
125 charger reverse-connection protection circuits, 126 filter circuits, 127 initializing circuits
128 section translation circuits, 129 fusible safe silks, 130 comparators
211 P type semiconductor substrates
225 isolation channels
235 degree of depth N type traps
241 are used for the N type substrate trap of the PMOS pipe of control circuit
242 are used for the P type substrate trap of the NMOS pipe of control circuit
The P type substrate trap of 243 N type main switches
The N type substrate trap of 244 P type main switches
251 P type light doping sections
252 N type light doping sections
The N type light doping section of the source/drain electrode of 253 N type main switches
254 P type masters are closed the P type light doping section of the source/drain electrode of pipe
261 P type heavily doped regions
262 N type heavily doped regions
270 grids
271 grid curb wall structures
275 gate insulators
M1 M2 transistor
Embodiment
Fig. 4 is the simplification square frame pie graph of an embodiment of the present invention.
In this enforcement, implement the detection of abnormalities such as the overcharging of batteries, overdischarge, overcurrent by main switch grid control circuit 101 and send the disconnection of main switch 103 or the control of conducting.Realize the correct bias of the substrate of main switch 103 by substrate control circuit 102.
Battery among Fig. 4 is secondary cell such as lithium ion normally, and positive electrode and positive voltage terminal are that the terminal T1 of described highly integrated battery protection circuit 100 is connected, and negative electrode is connected with negative voltage terminal T4 by main switch 103.Change countermeasure circuit absorbs the cell voltage change.Load or charger positive electrode meet T1 in addition, and negative electrode meets T4.The grid of main switch 103 connects main switch grid control circuit 101, and substrate connects main switch substrate control circuit 102.
Fig. 5 is the detailed square frame pie graph of a battery protection internal implementation example of the present invention
Highly integrated battery protection circuit 100 has main switch grid control circuit 101, main switch substrate control circuit 102, and main switch 103 and change countermeasure circuit 098 constitute.Wherein main switch grid control circuit 101 has reference voltage generating circuit 111, delay circuit 112, short-circuit detecting circuit 113, overcharges testing circuit 114, logical circuit 115, crosses and put testing circuit 116, excess temperature testing circuit 117, overcurrent sensing circuit 118, level shift circuit 119, charging testing circuit 120, initializing circuit 127, section translation circuit 128 and constitute; Substrate control circuit 102 has abnormal state detection circuit 121, minimum voltage testing circuit 122, substrate diverter switch 123, level shift circuit 124 formations; Change countermeasure circuit 098 has charger reverse-connection protection circuit 125, filter circuit 126 constitutes.
The control signal that abnormal state detection circuit 121 is accepted logical circuit 115 exports level shift circuit 124 to, level shift circuit 124 also receives the output of minimum voltage testing circuit 122 signals, exports the substrate that substrate diverter switch 123 is controlled main switch 103 then.
Fig. 6 is that section translation circuit of the present invention is implemented the square frame pie graph.
The disconnected fuse that holds that is connected in the negative input end of battery negative terminal and comparator 130 is used to control the 0V battery charge and forbids.Comparator 130 sends logic control circuit 115 with detection signal.
Fig. 7 is that charging testing circuit of the present invention is implemented the square frame pie graph.
The charging testing circuit is real relatively to be detected for negative voltage.The T4 terminal is connected in the drain electrode of M1, and the source electrode of M2 is connected in cell voltage, and the source electrode of the M1 negative terminal of delivering to comparator 130 that links to each other with the drain electrode of M2 is compared with earth potential.When big charger connects, negative voltage terminal T4 voltage is well below earth potential, thus M1 and M2 be composed in series the lifting that voltage lifting circuit has been realized negative voltage.When the T4 terminal voltage was lower than default charger detection voltage, comparator was judged charger and is connected.
Fig. 8 is that battery protecting apparatus of the present invention is integrated in the profile with semi-conductive substrate.With P type semiconductor substrate 211 is example, and the NMOS on the left side and PMOS are used for designing all control circuits of the present invention among Fig. 8, and the isolation nmos switch on the right is effective to design main switch of the present invention.Realize that by isolation channel 225 surface isolates between each device among the figure, the method that forms isolation channel 225 is many, does not describe one by one here.NMOS and PMOS derive from the semiconductor technology processing procedure CMOS technology of extensive employing among Fig. 8.Wherein NMOS and PMOS are by grid, source electrode, four port semiconductor device that drain electrode and substrate are formed.As shown in Figure 8, the grid 270 of NMOS and PMOS generally is to be formed by the polysilicon that mixes, and one deck gate insulator 275 (generally being silicon dioxide) is arranged between grid and the source/drain electrode.In the grid forming process, also can form a grid curb wall structure 271 usually.NMOS and PMOS are the semiconductor device of symmetry, and its source electrode and drain electrode can be exchanged.Source/drain electrode of NMOS is made up of N type heavily doped region 262 and N type light doping section 252, and source/drain electrode of PMOS is made up of P type heavily doped region 261 and P type light doping section 251.The substrate of NMOS is made up of P type substrate trap 242 and the P type heavily doped region 261 (figure does not mark) that injects this P type substrate trap, and the substrate of PMOS is made up of N type substrate trap 241 and the N type heavily doped region 262 (figure does not mark) that injects this N type substrate trap.Control circuit of the present invention also may be used NPN pipe or PNP pipe except being made up of NMOS and PMOS, because general CMOS technology all contains parasitic PNP pipe or NPN pipe, do not mark especially in this figure.Main switch shown in Fig. 8 is an isolated form nmos switch pipe, also is by grid, source electrode, four port semiconductor device that drain electrode and substrate are formed.In order to simplify technology, the grid 270 of this main switch is the same as with PMOS forming with semiconductor technology with the NMOS that is used for control circuit.This main switch is that with the NMOS maximum difference that is used for control circuit that is built in on the semi-conductive substrate its P type substrate trap 243 is isolated by degree of depth N type trap 235 and P type semiconductor substrate 211.The substrate of main switch can realize being replaced by a switching tube function of two switching tubes by its substrate control circuit tangential different node under different situations like this.The source electrode of this main switch and drain electrode also are symmetrical.In order to simplify technology, the source/drain electrode of main switch can also be made up of identical N type heavily doped region 262 and N type light doping section 252 with the NMOS that is used for control circuit is the same.But in battery protecting apparatus application or storage process, the both positive and negative polarity reversal connection of two batteries often takes place, the voltage difference between main switch drain electrode and the source electrode will reach the twice cell voltage in this case.In order to guarantee that main switch can be closed in this case, except the main switch grid control circuit need provide the signal of cutting out grid, the reverse breakdown voltage that also requires main switch was more than or equal to the twice cell voltage.When the selected NMOS puncture voltage that basic process provided is lower than 2 times of cell voltages, the NMOS that is used for main switch compare with the NMOS that is used for control circuit need be higher reverse breakdown voltage.For the simplest realization this point, the P type substrate trap 243 of scalable main switch and the N type light doping section 253 of source/drain electrode make it different with the N type light doping section 252 of the P type substrate trap 242 that is used for control circuit NMOS pipe and source/drain electrode.Improve how many puncture voltages according to needs under different basic processes and the different application situation, can regulate P type substrate trap 243 and N type light doping section 253 simultaneously or only regulate the two one of reach the purpose that promotes puncture voltage.If the both is need regulate simultaneously the time, last required technology will increase two procedures, if only need to regulate both one of, the then last increase one procedure that only needs.When the selected NMOS puncture voltage that basic process provided during more than or equal to 2 times of cell voltages, then the P type substrate trap 243 of main switch is identical with the P type substrate trap 242 of the NMOS pipe that is used for control circuit, the source of main switch/drain electrode N type light doping section 253 is identical with control circuit NMOS pipe source/drain electrode N type light doping section 252, like this just need not to increase any operation.
When Semiconductor substrate was the P type, because the N type substrate trap 241 of PMOS pipe is isolated with semi-conductive P type substrate 211, therefore also available PMOS pipe was as main switch, as shown in Figure 9.When the selected PMOS puncture voltage that basic process provided is lower than 2 times of cell voltages, the PMOS that is used for main switch compare with the PMOS that is used for control circuit need be higher reverse breakdown voltage.For the simplest realization this point, the N type substrate trap 244 of scalable P type main switch and the P type light doping section 254 of source/drain electrode make it different with the P type light doping section 251 of the N type substrate trap 241 that is used for control circuit PMOS pipe and source/drain electrode.Improve how many puncture voltages according to needs under different basic processes and the different application situation, can regulate N type substrate trap 244 and its P type light doping section 254 of P type main switch simultaneously or only need regulate the two one of reach the purpose that promotes puncture voltage.If the both is need regulate simultaneously the time, last required technology will increase two procedures, if only need to regulate both one of, the then last increase one procedure that only needs.When the selected PMOS puncture voltage that basic process provided during more than or equal to 2 times of cell voltages, then the N type substrate trap 244 of P type main switch is identical with the N type substrate trap 241 of the PMOS pipe that is used for control circuit, the source of P type main switch/drain electrode P type light doping section 254 is identical with control circuit PMOS pipe source/drain electrode P type light doping section 251, like this just need not to increase any operation.Because the PMOS internal resistance than NMOS internal resistance many greatly (being generally 2 to 2.5 times), takies bigger chip area as main switch than the NMOS pipe with isolation with the PMOS pipe, cost also can correspondingly increase.
When Semiconductor substrate is the N type, also can be by Fig. 8 and similar isolated form NMOS pipe and the isolated form PMOS pipe made of Fig. 9, this not tired one by one stating.
Claims (10)
1. a highly integrated battery protection circuit is characterized in that: comprise a termination battery, the main switch of a termination load or charger; Unusually send the main switch grid control circuit that disconnects the main switch signal according to the charge or discharge of battery; Has main switch substrate control circuit along with main switch state automatic switchover main switch underlayer voltage; Be used for reducing the anti-change countermeasure circuit that connects the damage of battery of power supply change and charger; Guarantee that highly integrated battery protection circuit enters the state initializing circuit of correct detected state when initially connecing battery; Realize the section translation circuit that 0V battery charge or 0V battery charge are forbidden according to different battery requirements.
2. highly integrated battery protection circuit according to claim 1 is characterized in that: described main switch is an isolated form NMOS pipe, and its substrate and whole semiconductor chip substrate are isolated.
3. highly integrated battery protection circuit according to claim 1 is characterized in that: described main switch is an isolated form PMOS pipe, and its substrate and whole Semiconductor substrate are isolated.
4. highly integrated battery protection circuit according to claim 1 is characterized in that: described main switch, main switch grid control circuit, main switch substrate control circuit, power supply change countermeasure circuit, state initializing circuit and section translation circuit all are arranged on on the semi-conductive substrate.
5. highly integrated battery protection circuit according to claim 1 is characterized in that: described main switch grid control circuit comprises reference voltage generating circuit, the testing circuit that overcharges, overdischarge testing circuit, overcurrent sensing circuit, built-in time of delay are provided with circuit, short-circuit detecting circuit, charger testing circuit, level shift circuit and temperature protection circuit.
6. highly integrated battery protection circuit according to claim 1 is characterized in that: described main switch substrate control circuit has minimum voltage decision circuitry, abnormality decision circuitry, substrate switching switch circuit and level shift circuit.
7. highly integrated battery protection circuit according to claim 1; it is characterized in that: described change countermeasure circuit has the filter circuit that is connected described highly integrated battery protection circuit external voltage input source and described highly integrated battery protection circuit internal supply voltage end, also has the charger reverse-connection protection circuit that is connected negative voltage terminal and described highly integrated battery protection circuit negative internal voltage test side.
8. highly integrated battery protection circuit according to claim 1 is characterized in that: described state initializing circuit has allows described highly integrated battery protection circuit enter the electrify restoration circuit of normal operating state when highly integrated battery protection circuit initially powers on.
9. highly integrated battery protection circuit according to claim 1 is characterized in that: described section translation circuit has can be by 0 volt of cell voltage comparison circuit of fusible safe silk programming.
10. highly integrated battery protection circuit according to claim 5 is characterized in that: the negative voltage lifting that described charger testing circuit has the negative voltage terminal is a positive voltage, realizes the voltage lifting circuit of the comparison between positive voltage.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2009100284958A CN101483335A (en) | 2009-02-03 | 2009-02-03 | Highly integrated battery protection circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2009100284958A CN101483335A (en) | 2009-02-03 | 2009-02-03 | Highly integrated battery protection circuit |
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| CN101483335A true CN101483335A (en) | 2009-07-15 |
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| CNA2009100284958A Pending CN101483335A (en) | 2009-02-03 | 2009-02-03 | Highly integrated battery protection circuit |
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Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101762790A (en) * | 2009-12-17 | 2010-06-30 | 成都瑞芯电子有限公司 | Testing equipment of battery circuit and testing method thereof |
| CN102005734A (en) * | 2010-10-20 | 2011-04-06 | 无锡中星微电子有限公司 | Battery protection integrated circuit and system |
| CN102545862A (en) * | 2010-12-23 | 2012-07-04 | 无锡华润上华半导体有限公司 | Switching circuit |
| CN102881725A (en) * | 2012-09-28 | 2013-01-16 | 无锡中星微电子有限公司 | Metal oxide semiconductor (MOS) tube, manufacture method thereof and application of MOS tube in battery protection circuit |
| CN103474967A (en) * | 2012-06-07 | 2013-12-25 | 苏州赛芯电子科技有限公司 | Highly-integrated battery protection circuit |
| CN104348233A (en) * | 2014-11-19 | 2015-02-11 | 无锡中星微电子有限公司 | Battery protection circuit and system |
| CN105429222A (en) * | 2015-12-15 | 2016-03-23 | 成都默一科技有限公司 | Charge and discharge device employing single port |
| CN106058817A (en) * | 2016-07-04 | 2016-10-26 | 李宝 | Power-off protection device for storage battery |
| CN107681637A (en) * | 2016-08-01 | 2018-02-09 | 上海晶准电子科技有限公司 | Battery protection integrated circuit |
| CN108572319A (en) * | 2017-03-09 | 2018-09-25 | 深圳市三诺声智联股份有限公司 | Batteries in parallel connection set detecting device and method |
| CN108768361A (en) * | 2018-07-18 | 2018-11-06 | 深圳市富满电子集团股份有限公司 | Substrate switching circuit for li-ion cell protection |
| CN109449891A (en) * | 2018-11-06 | 2019-03-08 | 苏州赛芯电子科技有限公司 | Improve the single-wafer battery protecting circuit and charge-discharge circuit of anti-peak voltage ability |
| CN110108918A (en) * | 2019-03-28 | 2019-08-09 | 南京中感微电子有限公司 | Detection of negative pressure circuit and battery protecting circuit |
| CN110445099A (en) * | 2019-08-06 | 2019-11-12 | 苏州赛芯电子科技有限公司 | A kind of semiconductor structure and its manufacturing process of integrated battery protection circuit |
| CN111817408A (en) * | 2020-09-10 | 2020-10-23 | 苏州赛芯电子科技有限公司 | 0V rechargeable lithium battery protection system and battery system with anti-load reverse connection function |
| CN111987771A (en) * | 2020-08-27 | 2020-11-24 | 西安稳先半导体科技有限责任公司 | On-chip system, battery pack and electronic device |
| CN113270853A (en) * | 2018-12-21 | 2021-08-17 | 荣耀终端有限公司 | Battery protection circuit, battery protection board, battery and terminal equipment |
| EP3981636B1 (en) * | 2020-10-12 | 2023-10-04 | Yazaki Corporation | Switch module, master switch unit, and slave switch unit |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101762790A (en) * | 2009-12-17 | 2010-06-30 | 成都瑞芯电子有限公司 | Testing equipment of battery circuit and testing method thereof |
| CN101762790B (en) * | 2009-12-17 | 2012-10-10 | 成都瑞芯电子有限公司 | Testing equipment of battery circuit and testing method thereof |
| CN102005734A (en) * | 2010-10-20 | 2011-04-06 | 无锡中星微电子有限公司 | Battery protection integrated circuit and system |
| CN102005734B (en) * | 2010-10-20 | 2013-09-18 | 无锡中星微电子有限公司 | Battery protection integrated circuit and system |
| CN102545862A (en) * | 2010-12-23 | 2012-07-04 | 无锡华润上华半导体有限公司 | Switching circuit |
| CN102545862B (en) * | 2010-12-23 | 2014-06-04 | 无锡华润上华半导体有限公司 | Switching circuit |
| CN103474967A (en) * | 2012-06-07 | 2013-12-25 | 苏州赛芯电子科技有限公司 | Highly-integrated battery protection circuit |
| CN102881725A (en) * | 2012-09-28 | 2013-01-16 | 无锡中星微电子有限公司 | Metal oxide semiconductor (MOS) tube, manufacture method thereof and application of MOS tube in battery protection circuit |
| CN104348233A (en) * | 2014-11-19 | 2015-02-11 | 无锡中星微电子有限公司 | Battery protection circuit and system |
| CN105429222A (en) * | 2015-12-15 | 2016-03-23 | 成都默一科技有限公司 | Charge and discharge device employing single port |
| CN106058817A (en) * | 2016-07-04 | 2016-10-26 | 李宝 | Power-off protection device for storage battery |
| CN107681637A (en) * | 2016-08-01 | 2018-02-09 | 上海晶准电子科技有限公司 | Battery protection integrated circuit |
| CN108572319A (en) * | 2017-03-09 | 2018-09-25 | 深圳市三诺声智联股份有限公司 | Batteries in parallel connection set detecting device and method |
| CN108768361A (en) * | 2018-07-18 | 2018-11-06 | 深圳市富满电子集团股份有限公司 | Substrate switching circuit for li-ion cell protection |
| CN109449891A (en) * | 2018-11-06 | 2019-03-08 | 苏州赛芯电子科技有限公司 | Improve the single-wafer battery protecting circuit and charge-discharge circuit of anti-peak voltage ability |
| CN113270853B (en) * | 2018-12-21 | 2023-07-14 | 荣耀终端有限公司 | Battery protection circuit, battery protection board, battery and terminal equipment |
| US11962143B2 (en) | 2018-12-21 | 2024-04-16 | Honor Device Co., Ltd. | Battery protection circuit, battery protection board, battery, and terminal device |
| CN113270853A (en) * | 2018-12-21 | 2021-08-17 | 荣耀终端有限公司 | Battery protection circuit, battery protection board, battery and terminal equipment |
| CN110108918A (en) * | 2019-03-28 | 2019-08-09 | 南京中感微电子有限公司 | Detection of negative pressure circuit and battery protecting circuit |
| CN110108918B (en) * | 2019-03-28 | 2021-07-09 | 南京中感微电子有限公司 | Negative pressure detection circuit and battery protection circuit |
| CN110445099A (en) * | 2019-08-06 | 2019-11-12 | 苏州赛芯电子科技有限公司 | A kind of semiconductor structure and its manufacturing process of integrated battery protection circuit |
| CN110445099B (en) * | 2019-08-06 | 2020-10-23 | 苏州赛芯电子科技有限公司 | Semiconductor structure of integrated battery protection circuit and manufacturing process thereof |
| CN111987771A (en) * | 2020-08-27 | 2020-11-24 | 西安稳先半导体科技有限责任公司 | On-chip system, battery pack and electronic device |
| CN111987771B (en) * | 2020-08-27 | 2022-02-22 | 西安稳先半导体科技有限责任公司 | On-chip system, battery pack and electronic device |
| CN111817408A (en) * | 2020-09-10 | 2020-10-23 | 苏州赛芯电子科技有限公司 | 0V rechargeable lithium battery protection system and battery system with anti-load reverse connection function |
| EP3981636B1 (en) * | 2020-10-12 | 2023-10-04 | Yazaki Corporation | Switch module, master switch unit, and slave switch unit |
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Open date: 20090715 |