CN101478024A - Silicon encapsulation unit for LED - Google Patents
Silicon encapsulation unit for LED Download PDFInfo
- Publication number
- CN101478024A CN101478024A CN 200910036551 CN200910036551A CN101478024A CN 101478024 A CN101478024 A CN 101478024A CN 200910036551 CN200910036551 CN 200910036551 CN 200910036551 A CN200910036551 A CN 200910036551A CN 101478024 A CN101478024 A CN 101478024A
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- China
- Prior art keywords
- silicon substrate
- silicon
- led
- substrate
- led chip
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Abstract
An LED Si package unit comprises a Si substrate having a recessed surface and a bottom surface opposite to the recessed surface; a pair of substrate circuits arranged in the recessed surface and having conductive holes on each one; and a pair of external circuit electrodes corresponding to the substrate circuits and arranged on the bottom surface of the Si substrate, wherein the conductive holes penetrate the external circuit electrodes; and electrical connection between the substrate circuits and the external circuit electrodes can be achieved by filling the conductive holes with a conductive material; an LED chip electrically connected with the substrate circuit is arranged in the recessed surface; an extensive radiator is connected with the Si substrate for dissipating heat of the Si substrate; and a pair of extensive radiator circuits respectively electrically connected with the pair of substrate circuits are arranged on the surface of the extensive radiator. The LED package unit has good heat dissipation effect.
Description
Technical field
The present invention relates to a kind of LED silicon encapsulation unit.
Background technology
Recently, more and more with LED as the device of light source.The reason that led light source receives an acclaim as solid light source is that its volume is little, and is energy-conservation, environmental protection, brilliance such as the life-span is long performance caused.
For improving the brightness of led light source, give full play to its luminous efficiency, mainly reach at present by following four approach:
1, improves led chip and get the light rate;
2, strengthen the operating current of led chip, thereby improve luminous power;
3, adopt Novel LED encapsulating structure to improve the conversion efficiency of photoelectric power;
4, select good heat sink material for use, under big electric current, reduce junction temperature of chip.
Comprehensive above-mentioned 4 points all need to solve the problem of led chip heat radiation in wherein back three kinds of approach.In other words, the led chip heat radiation is the key issue that the LED encapsulating structure must solve.The consideration of led chip heat radiation is mainly comprised the selection of chip layout, encapsulating material (baseplate material, thermal interfacial material etc.) and treatment process, heat sink design etc.
Yet there is the problem of radiating efficiency difference in LED encapsulating structure of the prior art.
Summary of the invention
The purpose of this invention is to provide the good LED silicon encapsulation unit of a kind of radiating effect.
To achieve these goals, the invention provides a kind of LED silicon encapsulation unit, it comprises: form the silicon substrate that the silicon substrate concave face reaches the silicon substrate bottom surface relative with this silicon substrate concave face on it, a pair of substrate circuit is set in the silicon substrate concave face, offer conductive hole on each substrate circuit, the silicon substrate bottom surface is provided with a pair of external circuit electrode corresponding with substrate circuit, conductive hole passes the external circuit electrode, by electric conducting material being poured in the electric connection that realizes substrate circuit and external circuit electrode in the conductive hole, installation is connected to the led chip of substrate circuit electrically in the silicon substrate concave face; And be connected with silicon substrate so that to the extension radiator of its heat radiation, extension radiator surface be provided with a pair of respectively with silicon substrate on the extension radiator circuit of a pair of substrate circuit electric connection.
The invention has the advantages that: 1, with respect to prior art, at first overcome the not enough problem of existing substrate holder heat radiation, realized the encapsulating structure of the whole high-efficiency heat conduction heat radiation of substrate holder; 2, broken through the bad heat radiation approach that exists the multilayer thermal resistance to intercept in the prior art heat dissipation path, led chip and silicon substrate have only one deck thermal resistance, can efficiently directly loose heat to the outside.3, the silicon packaged LED can be realized the high-power encapsulation of polycrystalline particle, can connect with extension radiator or circuit efficiently by SMD and Reflow Soldering simultaneously.
Below in conjunction with accompanying drawing, describe the present invention in detail by preferred embodiment.
Description of drawings
Fig. 1 is the vertical view of the silicon substrate in the LED silicon encapsulation unit of the present invention.
Fig. 2 is the upward view of silicon substrate shown in Figure 1.
Fig. 3 is the stereogram of Fig. 1 and silicon substrate that Fig. 2 shows.
Fig. 4 installs led chip stereoscopic-state figure afterwards on the silicon substrate shown in Figure 3.
Fig. 5 is the stereogram of the extension radiator in the LED silicon encapsulation unit of the present invention.
Fig. 6 is the extension radiator assembling stereoscopic-state figure afterwards that led chip silicon substrate and Fig. 5 are showed that is equipped with shown in Figure 4.
Fig. 7 A is the vertical view of LED silicon encapsulation unit shown in Figure 6.
Fig. 7 B is that LED silicon encapsulation unit shown in Fig. 7 A is along the cutaway view of A-A direction.
Fig. 7 C is the partial enlarged drawing of the B of LED silicon encapsulation unit shown in Fig. 7 B part.
Fig. 8 is a view of having showed LED silicon encapsulation unit radiating state of the present invention.
Embodiment
With reference now to accompanying drawing, present invention is described.
Shown in Fig. 7 C, the LED silicon encapsulation unit comprises silicon substrate 1 and is arranged on the bottom of silicon substrate 1 so that the extension radiator 120 that the led chip on the silicon substrate 1 is dispelled the heat according to an embodiment of the invention as Fig. 1.
At first will describe the detailed structure of silicon substrate 1 in detail.
With reference to figure 1-Fig. 4, the silicon substrate 1 in the LED silicon encapsulation unit is substantially rectangular shape according to an embodiment of the invention, and this silicon substrate 1 is preferably formed such as the silicon manufacturing by the suitable material that helps dispelling the heat.
With reference to figure 4 and Fig. 8, the led chip 3 of some, be connected on the silicon substrate concave face 21 of silicon substrate 1 by heat-conducting glue 302 such as three led chips 3, and, corresponding led chip 3 is connected on the substrate circuit 201,202 electrically such as the lead made from gold or silver 306 by lead 306.
Here, described heat-conducting glue can be the heat-conducting glue of any suitable type, such as silver slurry glue or aluminium paste glue or other high-efficiency heat conduction glue.And, being connected and realizing like this between led chip 3 and the silicon substrate concave face 21: earlier both are bondd with suitable heat-conducting glue, temperature with 110 ℃ was toasted 0.5 hour in LED special-purpose high temperature baking box then, thereby cause heat-conducting glue to solidify, and then led chip 3 and silicon substrate concave face 21 are stably coupled together.Further step can comprise to be tested the electrical characteristic of led chip 3, and encapsulated epoxy resin in silicon substrate concave face 21 then toasted once more 2 hours with 150 ℃ temperature and solidifies last beam split color separation at LED special-purpose high temperature baking box then.
With reference to figure 5, this figure has showed the detailed structure of the extension radiator of LED silicon encapsulation unit according to an embodiment of the invention.As shown in the figure, extension radiator 120 is essentially the three-dimensional shape that is similar to silicon substrate 1, relatively is provided with a pair of extension radiator circuit 102,101 on the surface 105 of extension radiator 120.Described a pair of extension radiator circuit 102,101 be used for respectively with silicon substrate 1 on a pair of substrate circuit 201,02 electrically connect, so that the led chip on the silicon substrate concave face 21 3 is connected to other circuit boards (figure does not show) electrically, to control led chip 3 by this other circuit board.Here, extension radiator 120 is made such as aluminium by suitable heat sink material, so that improve the radiating efficiency of led chip 3.
Reference 2 and Fig. 6-8, realize being connected between silicon substrate 1 and the extension radiator 120 by surface 105 that the silicon substrate bottom surface 205 of silicon substrate 1 is bonded to extension radiator 120 by suitable heat-conducting glue such as heat conductive silica gel 1002, thereby formed led chip encapsulation unit according to an embodiment of the invention.
Explain the heat radiation process of led chip encapsulation unit below with reference to Fig. 8.Led chip 3 in use can give out a large amount of heats, and this heat can see through high-efficiency heat conduction glue 302 and directly be dispersed into the outside via silicon substrate 1, because silicon substrate 1 is made such as materials such as silicon by suitable heat sink material.The heat of led chip 3 generations also can be dispersed into the outside by heat-conducting silicone grease 1002 and extension radiator 120 in addition, thereby has reduced the temperature of led chip 3 when work.
Main concept of the present invention is to be material with the silicon crystal, based on manufacture of semiconductor and micro electronmechanical accurate structure packing technique, on Silicon Wafer, finish and be included in development, etching, the surface oxidation insulation processing that the gold-tinted chamber is carried out, the processing procedure of evaporation and plating etc. then, and finish the silicon envelope shape substrate of circuit production in one.
Led chip has only one deck heat sink in the middle of directly engaging with silicon substrate by heat-conducting glue, and breakthrough is leaned on electrode heat conduction or added heating column or there is insulating barrier the centre, and the more direct height of heat conduction and heat radiation performance is effective.
This invention selection is a baseplate material for the good conductor silicon crystal of heat, with the silicon crystal is that its superiority of baseplate material shows: 1. very approaching of thermal coefficient of expansion and led chip, Heat stability is good, 2. good heat conductivity, being only second to metal such as copper aluminium and ceramic phase works as, 3. cost is low, with silicon integral body is substrate, whole heat conduction and heat radiation, 4. can carry out fine structure processing at present the thinnest packaged LED can accomplish 0.5mm, more than 4 combination properties more no matter be the metal alloy substrate, the metal plastic substrate still be ceramic substrate all be unsurpassable.
For breaking through this invention of heat radiation bottleneck based on manufacture of semiconductor and micro electronmechanical accurate structure packing technique, on Silicon Wafer, finish and be included in development, etching, the surface oxidation insulation processing that the gold-tinted chamber is carried out, processing procedure such as evaporation and plating, and finish circuit production and seal the shape substrate in the silicon of one, led chip has only one deck heat sink in the middle of directly engaging with silicon substrate by heat-conducting glue, break through by electrode heat conduction or add heating column or there is insulating barrier the centre, the more direct height of heat conduction and heat radiation performance is effective.
Above disclosed only is the preferred embodiments of the present invention, can not limit the present invention's interest field certainly with this, and therefore the equivalent variations of being done according to the present patent application claim still belongs to the scope that the present invention is contained.
Claims (9)
1. LED silicon encapsulation unit is characterized in that comprising:
With the silicon crystal is the silicon substrate that basic material is made, form silicon substrate concave face and the silicon substrate bottom surface relative on it with this silicon substrate concave face, a pair of substrate circuit is set in the described silicon substrate concave face with facing one another, offer conductive hole on each substrate circuit, described silicon substrate bottom surface is provided with a pair of external circuit electrode corresponding with described substrate circuit, and conductive hole passes the external circuit electrode, and by electric conducting material being poured in the electric connection that realizes in the described conductive hole between corresponding substrate circuit and the external circuit electrode, in the described silicon substrate concave face led chip is installed, described led chip is connected to described substrate circuit electrically; And
Be connected with described silicon substrate so that to the extension radiator of its heat radiation, relatively be provided with on the surface of described extension radiator a pair of respectively with silicon substrate on the extension radiator circuit that electrically connects of a pair of substrate circuit.
2. LED silicon encapsulation unit according to claim 1 is characterized in that: described led chip is installed in the described silicon substrate concave face by heat-conducting glue.
3. LED silicon encapsulation unit according to claim 2 is characterized in that: described heat-conducting glue is silver slurry glue or aluminium paste glue or other high-efficiency heat conduction colloid admixture.
4. LED silicon encapsulation unit according to claim 1 is characterized in that: described led chip is connected to described substrate circuit electrically by lead.
5. LED silicon encapsulation unit according to claim 1, it is characterized in that: being connected like this between described led chip and the described silicon substrate concave face realizes: earlier led chip and silicon substrate concave face are bondd with heat-conducting glue, toasted 0.5 hour with 110 ℃ temperature then, thereby cause heat-conducting glue to solidify, and then described led chip and silicon substrate concave face are stably coupled together.
6. LED silicon encapsulation unit according to claim 1, it is characterized in that: the performing step that is connected between described led chip and the described silicon substrate concave face further comprises the electrical characteristic of led chip is tested, encapsulated epoxy resin in the silicon substrate concave face then, next toast curing in 2 hours once more with 150 ℃ temperature, last beam split color separation.
7. LED silicon encapsulation unit according to claim 1 is characterized in that: described extension radiator is by aluminium, copper, and pottery, Heat Conduction Materials such as alloy are made.
8. LED silicon encapsulation unit according to claim 1 is characterized in that: the quantity of described led chip is 1-200.
9. LED silicon encapsulation unit according to claim 1 is characterized in that: described silicon substrate bottom-side electrodes is connected with described extension radiator electrically, fills heat-conducting silicone grease between described silicon substrate bottom surface and the described extension radiator surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910036551 CN101478024B (en) | 2009-01-09 | 2009-01-09 | Silicon encapsulation unit for LED |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910036551 CN101478024B (en) | 2009-01-09 | 2009-01-09 | Silicon encapsulation unit for LED |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101478024A true CN101478024A (en) | 2009-07-08 |
| CN101478024B CN101478024B (en) | 2011-07-13 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200910036551 Expired - Fee Related CN101478024B (en) | 2009-01-09 | 2009-01-09 | Silicon encapsulation unit for LED |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101478024B (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102064248A (en) * | 2010-11-29 | 2011-05-18 | 浙江九星科技有限公司 | High-power LED chip packaging method |
| CN102539946A (en) * | 2010-12-23 | 2012-07-04 | 思达科技股份有限公司 | Test equipment |
| CN102811550A (en) * | 2011-06-02 | 2012-12-05 | 李金连 | Circuit board with radiator and manufacturing method thereof |
| CN103339751A (en) * | 2011-11-15 | 2013-10-02 | 松下电器产业株式会社 | Light-emitting module and lamp using same |
| CN105006515A (en) * | 2015-06-04 | 2015-10-28 | 佛山市南海区联合广东新光源产业创新中心 | LED chip heat dissipation structure |
| CN107078116A (en) * | 2014-11-06 | 2017-08-18 | 德克萨斯仪器股份有限公司 | Silicon for embedded semiconductor chip and power converter is encapsulated |
-
2009
- 2009-01-09 CN CN 200910036551 patent/CN101478024B/en not_active Expired - Fee Related
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102064248A (en) * | 2010-11-29 | 2011-05-18 | 浙江九星科技有限公司 | High-power LED chip packaging method |
| CN102064248B (en) * | 2010-11-29 | 2012-06-27 | 浙江九星科技有限公司 | High-power LED chip packaging method |
| CN102539946A (en) * | 2010-12-23 | 2012-07-04 | 思达科技股份有限公司 | Test equipment |
| CN102811550A (en) * | 2011-06-02 | 2012-12-05 | 李金连 | Circuit board with radiator and manufacturing method thereof |
| CN103339751A (en) * | 2011-11-15 | 2013-10-02 | 松下电器产业株式会社 | Light-emitting module and lamp using same |
| CN103339751B (en) * | 2011-11-15 | 2016-12-14 | 松下知识产权经营株式会社 | Light emitting module and use the lamp of this light emitting module |
| CN107078116A (en) * | 2014-11-06 | 2017-08-18 | 德克萨斯仪器股份有限公司 | Silicon for embedded semiconductor chip and power converter is encapsulated |
| CN105006515A (en) * | 2015-06-04 | 2015-10-28 | 佛山市南海区联合广东新光源产业创新中心 | LED chip heat dissipation structure |
| CN105006515B (en) * | 2015-06-04 | 2018-01-19 | 佛山市南海区联合广东新光源产业创新中心 | A kind of LED chip radiator structure |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101478024B (en) | 2011-07-13 |
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Granted publication date: 20110713 Termination date: 20130109 |
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| CF01 | Termination of patent right due to non-payment of annual fee |