CN101477954B - LED chip encapsulation method and construction having high efficient lateral direction light emission effect - Google Patents
LED chip encapsulation method and construction having high efficient lateral direction light emission effect Download PDFInfo
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- CN101477954B CN101477954B CN2008100000843A CN200810000084A CN101477954B CN 101477954 B CN101477954 B CN 101477954B CN 2008100000843 A CN2008100000843 A CN 2008100000843A CN 200810000084 A CN200810000084 A CN 200810000084A CN 101477954 B CN101477954 B CN 101477954B
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- 238000012856 packing Methods 0.000 claims description 106
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
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- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
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- 229910000831 Steel Inorganic materials 0.000 claims description 4
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- 239000003822 epoxy resin Substances 0.000 claims description 4
- 229920000647 polyepoxide Polymers 0.000 claims description 4
- 239000000741 silica gel Substances 0.000 claims description 4
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- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 6
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
- H01L2924/15747—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
Abstract
The invention relates to a light-emitting diode chip packaging structure with high-efficiency lateral lighting effect. The structure comprises a base plate unit, a light-emitting unit, a package colloid unit and a frame unit, wherein, the light-emitting unit comprises a plurality of light-emitting diode chips which are electrically arranged on the base plate unit. The package colloid unit comprises a stripe package colloid covering the light-emitting diode chips, wherein, a colloid arc surface and a colloid light-exiting surface are arranged on the upper surface and the front surface of the stripe package colloid respectively. The frame unit adopts a frame layer covering the base plate unit and coating the stripe package colloid, and only the colloid light-exiting surface is exposed.
Description
Technical field
The present invention relates to a kind of method for packing and encapsulating structure thereof of light-emitting diode chip for backlight unit, relate in particular to a kind of method for packing and encapsulating structure thereof with light-emitting diode chip for backlight unit of high efficient lateral direction light emission effect (high-efficiency lateral light-emitting effect).
Background technology
See also shown in Figure 1ly, it is the flow chart of existing light emitter diode seal method.By knowing in the flow chart, have light emitter diode seal method now, its step comprises: at first, several light-emitting diodes (packaged LED) that encapsulation is accomplished are provided (S800); Then, a strip substrate body (strippedsubstrate body) is provided, has a positive conductive traces (positive electrode trace) and a negative pole conductive traces (negative electrode trace) on it (S802); At last; The light-emitting diode of in regular turn each encapsulation being accomplished (packaged LED) is arranged on this strip substrate body, and each is encapsulated the positive and negative positive and negative electrode conductive traces (S804) that extremely is electrically connected at this strip substrate body respectively of the light-emitting diode of accomplishing (packaged LED).
Yet; About above-mentioned existing light emitter diode seal method, because encapsulating the light-emitting diode of accomplishing (packaged LED), each must cut down from a monoblock LED package earlier, and then with surface mount technology (SMT) processing procedure; The light-emitting diode (packaged LED) that each encapsulation is accomplished is arranged on this strip substrate body; Therefore can't effectively shorten its processing procedure time, moreover, when luminous; Have blanking bar (dark band) phenomenon between the light-emitting diode (packaged LED) that these encapsulation are accomplished and exist, still produce not good effect for user's sight line.
See also shown in Figure 2ly, it is applied to the sketch map of lateral direction light emission for existing light-emitting diode.By knowing among the figure; When existing light-emitting diode chip for backlight unit D is applied to lateral direction light emission (for example: the side direction light source that is used in the LGP M of mobile computer screen); Because the extremely thin relation of LGP M of mobile computer screen, 1 of the length l of the pedestal S1 of this light-emitting diode chip for backlight unit D must relative shortening.In other words, because the too short relation of length l 1 of this pedestal S1, existing light-emitting diode chip for backlight unit D can't obtain effective radiating effect, and then produce light-emitting diode chip for backlight unit D because of the overheated situation that burns out.
Be with, by on can know that present existing light emitter diode seal method and encapsulating structure obviously have inconvenience and exist with disappearance, and treat in addition improver.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of method for packing and encapsulating structure thereof with light-emitting diode chip for backlight unit of high efficient lateral direction light emission effect (high-efficiency lateral light-emitting effect).Light emitting diode construction of the present invention is when luminous; Form a continuous light-emitting zone; And the situation of not having blanking bar (dark band) and optical attenuation (decay) takes place, and the present invention directly encapsulates (Chip On Board, COB) processing procedure and utilize the mode of pressing mold (die mold) through chip; So that the present invention can shorten its processing procedure time effectively, and can produce in a large number.Moreover structural design of the present invention more is applicable to various light sources, such as application such as backlight module, Decorating lamp strip, illuminator lamp or scanner light sources, is all applied scope of the present invention and product.
In addition, packing colloid of the present invention is through the pressing mold process of special dies, so that LED encapsulation construction of the present invention under upright situation, can produce the effect of lateral direction light emission, so the present invention does not have the not enough situation generation of heat radiation.In other words, the present invention not only can produce the function of side direction light projector, more can turn round and look at the radiating effect that is applied in the thin case.
In order to solve the problems of the technologies described above; According to wherein a kind of scheme of the present invention; A kind of method for packing with light-emitting diode chip for backlight unit of high efficient lateral direction light emission effect (high-efficiency lateral light-emitting effect) is provided; It comprises the following steps: at first, and a base board unit is provided; Then,, several light-emitting diode chip for backlight unit are set on this base board unit respectively with electrically connecting, arrange to light-emitting diode chip for backlight unit to form the number horizontal row through the mode of matrix (matrix); Then, through one first die unit, a packing colloid is longitudinally covered on all lateral luminous diode chip for backlight unit rows, wherein the upper surface of this packing colloid has several corresponding these lateral luminous diode chip for backlight unit rows' colloid cambered surface.
Next; Between per two vertical light-emitting diode chip for backlight unit; Laterally cut this packing colloid; Be covered in the strip packing colloid of each horizontal row on light-emitting diode chip for backlight unit row apart from each other to form several, wherein the upper surface of each strip packing colloid is this colloid cambered surface, and each strip packing colloid have one be formed at this colloid cambered surface front end colloid exiting surface (colloid light-exiting surface); Then, through one second die unit, a frame unit is covered on this base board unit and these strip packing colloids and is filled between per two strip packing colloids; At last; Between per two vertical light-emitting diode chip for backlight unit; Laterally cut this frame unit and this base board unit; Forming several optical wands, and make this frame unit be cut into the ccf layer that several only let the colloid exiting surface (colloid light-exiting surface) of the strip packing colloid on each bar optical wand expose respectively.
In order to solve the problems of the technologies described above; According to wherein a kind of scheme of the present invention; A kind of method for packing with light-emitting diode chip for backlight unit of high efficient lateral direction light emission effect (high-efficiency lateral light-emitting effect) is provided; It comprises the following steps: at first, and a base board unit is provided; Then,, several light-emitting diode chip for backlight unit are set on this base board unit respectively with electrically connecting, arrange to light-emitting diode chip for backlight unit to form the number horizontal row through the mode of matrix (matrix); Then; Through one first die unit; Several strip packing colloids are laterally covered respectively on these lateral luminous diode chip for backlight unit rows; Wherein the upper surface of each strip packing colloid has the colloid cambered surface, and the side surface of each strip packing colloid have one be formed at this colloid cambered surface front end colloid exiting surface (colloid light-exiting surface).
And then, through one second die unit, a frame unit is covered on this base board unit and these strip packing colloids and is filled between per two strip packing colloids; At last; Between per two vertical light-emitting diode chip for backlight unit; Laterally cut this frame unit and this base board unit; Forming several optical wands, and make this frame unit be cut into the ccf layer that several only let the colloid exiting surface (colloid light-exiting surface) of the strip packing colloid on each bar optical wand expose respectively.
In order to solve the problems of the technologies described above; According to wherein a kind of scheme of the present invention; A kind of LED encapsulation construction with high efficient lateral direction light emission effect (high-efficiency lateral light-emitting effect) is provided, and it comprises: a base board unit, a luminescence unit (light-emitting unit), a packing colloid unit (package colloid unit), an and frame unit.
Wherein, this luminescence unit has several and is arranged at the light-emitting diode chip for backlight unit on this base board unit electrically.This packing colloid unit has the strip packing colloid that is covered on these light-emitting diode chip for backlight unit, and wherein the upper surface of this strip packing colloid and front surface have colloid cambered surface and colloid exiting surface (colloid light-exiting surface) respectively.This frame unit is that one deck is covered on this base board unit and coats this strip packing colloid and only expose the ccf layer (frame layer) of this colloid exiting surface (colloid light-exiting surface).
Therefore, light emitting diode construction of the present invention forms a continuous light-emitting zone when luminous, and the situation of not having blanking bar (dark band) and an optical attenuation (decay) takes place.And the present invention encapsulates directly through chip that (Chip On Board, COB) processing procedure and utilize the mode of pressing mold (die mold) so that the present invention can shorten its processing procedure time effectively, and can be produced in a large number.Moreover, because LED encapsulation construction of the present invention under upright situation, can produce the effect of lateral direction light emission.Therefore, the present invention not only can produce the function of side direction light projector, more can turn round and look at the radiating effect that is applied in the thin case.
Describe the present invention below in conjunction with accompanying drawing and specific embodiment, but not as to qualification of the present invention.
Description of drawings
Fig. 1 is the flow chart of existing light emitter diode seal method;
Fig. 2 is applied to the sketch map of lateral direction light emission for existing light-emitting diode;
Fig. 3 is the flow chart of first embodiment of method for packing of the present invention;
Fig. 3 a to Fig. 3 f is respectively the encapsulation flow process schematic perspective view of first embodiment of encapsulating structure of the present invention;
Fig. 3 A to Fig. 3 F is respectively the encapsulation flow process generalized section of first embodiment of encapsulating structure of the present invention;
Fig. 4 realizes the sketch map that electrically connects for light-emitting diode chip for backlight unit of the present invention through the mode of covering crystalline substance (flip-chip);
Fig. 5 does not pour into the preceding sketch map of packing colloid for Fig. 3 C of the present invention;
Fig. 6 is the flow chart of second embodiment of method for packing of the present invention;
Fig. 6 a is the part encapsulation flow process schematic perspective view of second embodiment of encapsulating structure of the present invention;
Fig. 6 A is the part encapsulation flow process generalized section of second embodiment of encapsulating structure of the present invention; And
Fig. 7 is applied to the sketch map of lateral direction light emission for the encapsulating structure of light-emitting diode chip for backlight unit of the present invention.
Wherein, Reference numeral
The D light-emitting diode chip for backlight unit
The M LGP
The S1 pedestal
L1 length
1 base board unit, 10 substrate body
The 10A metal level
10B bakelite layer
11 positive conductive traces
12 negative pole conductive traces
1 ' base board unit, 11 ' positive conductive traces
12 ' negative pole conductive traces
2 lateral luminous diode chip for backlight unit are arranged 20 light-emitting diode chip for backlight unit
201 positive terminals
202 negative pole ends
20 ' light-emitting diode chip for backlight unit
201 ' positive terminal
202 ' negative pole end
3 packing colloids, 30 strip packing colloids
300 colloid cambered surfaces
301 colloid front end faces
302 colloid exiting surfaces
4 frame units, 40 ccf layers
The W lead
B tin ball
The M1 first die unit M11 first mold
The M110 first passage
M12 first bed die
The G groove
G100 mould cambered surface
G101 mould front end face
M1 ' first die unit the M11 ' first mold
M110 ' first passage
M12 ' first bed die
G100 ' mould cambered surface
G101 ' mould front end face
The M2 second die unit M21 second mold
The M210 second channel
M22 second bed die
The L1 optical wand
The D light-emitting diode chip for backlight unit
The M LGP
The S2 pedestal
L2 length
Embodiment
See also Fig. 3, Fig. 3 a to Fig. 3 f, reach shown in Fig. 3 A to Fig. 3 F.Fig. 3 is the flow chart of first embodiment of method for packing of the present invention; Fig. 3 a to Fig. 3 d is respectively the encapsulation schematic flow sheet of first embodiment of encapsulating structure of the present invention, and Fig. 3 A to Fig. 3 D is respectively the encapsulation flow process generalized section of first embodiment of encapsulating structure of the present invention.Flow chart by Fig. 3 can know that the first embodiment of the present invention provides a kind of method for packing with light-emitting diode chip for backlight unit of high efficient lateral direction light emission effect (high-efficiency lateral light-emitting effect), and it comprises the following steps:
At first; Please cooperate shown in Fig. 3 a and Fig. 3 A; One base board unit 1 is provided, and it has a substrate body (substrate body) 10, reaches several positive conductive traces (positive electrode trace) 11 and several negative pole conductive traces (negative electrode trace) 12 (S100) of being formed at respectively on this substrate body 10.
Wherein, this substrate body 10 comprises that a metal level (metal layer) 10A and is formed in bakelite layer (bakelite layer) 10B (shown in Fig. 3 a and Fig. 3 A) on this metal level 10A.Moreover; According to different design requirements, this base board unit 10 can be a printed circuit board (PCB) (PCB), a soft base plate (flexible substrate), an aluminium base (aluminum substrate), a ceramic substrate (ceramicsubstrate) or a copper base (copper substrate).In addition, this positive and negative electrode conductive traces 11,12 can adopt aluminum steel road (aluminum circuit) or silver-colored circuit (silver circuit), and the layout (layout) of this positive and negative electrode conductive traces 11,12 can change along with different needs to some extent.
Then; Please cooperate shown in Fig. 3 b and Fig. 3 B; Mode through matrix (matrix); Several light-emitting diode chip for backlight unit 20 are set on this substrate body 10 respectively, to form the number horizontal row to light-emitting diode chip for backlight unit row 2, wherein each light-emitting diode chip for backlight unit 20 has a positive terminal (positive electrode side) 201 and one negative pole end (negative electrode side) 202 (S102) of the positive and negative electrode conductive traces 11,12 that is electrically connected at this base board unit respectively with electrically connecting.
In addition; With the first embodiment of the present invention; Each light-emitting diode chip for backlight unit 20 positive and negative extreme 201,202 through two corresponding lead W and with the mode of routing (wire-bounding), produce with positive and negative electrode conductive traces 11,12 and to electrically connect with this base board unit 1.Moreover each horizontal row is arranged on the substrate body 10 of this base board unit 1 to light-emitting diode chip for backlight unit row 2 arrangement modes with a straight line, and each light-emitting diode chip for backlight unit 20 can be a blue led chips (blue LED).
Certainly; The electric connection mode of above-mentioned these light-emitting diode chip for backlight unit 20 is non-in order to limit the present invention; For example: see also (light-emitting diode chip for backlight unit of the present invention realize electrically connect sketch map) shown in Figure 4 through the mode of covering core; Each light-emitting diode chip for backlight unit 20 ' positive and negative extreme 201 ', 202 ' through several corresponding tin ball B and covering the mode of crystalline substance (flip-chip), with this base board unit 1 ' positive and negative electrode conductive traces 11 ', 12 ' produce and electrically connect.In addition; According to different design requirements; The mode that these light-emitting diode chip for backlight unit (figure do not show) positive and negative extremely can be connected (parallel), parallel connection (serial) or series connection add parallel connection (parallel/serial) produces with the positive and negative electrode conductive traces with this base board unit (figure does not show) and to electrically connect.
Then; Please cooperate Fig. 3 c, Fig. 3 C and shown in Figure 5; Through one first die unit M1; One packing colloid 3 is longitudinally covered on all lateral luminous diode chip for backlight unit rows 2, and wherein the upper surface of this packing colloid 3 has several corresponding these lateral luminous diode chip for backlight unit rows' 2 colloid cambered surface 300, and this packing colloid 3 has several colloid front end faces that are arranged at these corresponding colloid cambered surface 300 front ends (colloid lateral surface) 301 (S104).
Wherein, This first die unit M1 is made up of first bed die (the first lower mold) M12 that one first mold (first upper mold) M11 and is used to carry this substrate body 10; And this first mold M11 has first passage (first channel) M110; Wherein this first passage M110 has several grooves (concave groove) G, and the upper surface of each groove G and front surface have mould cambered surface (mold camberedsurface) G100 of corresponding this colloid cambered surface 300 and mould front end face (the mold lateral surface) G101 of corresponding this colloid front end face (colloid lateral surface) 301 respectively.Moreover; This packing colloid 3 can be according to different user demands, and are chosen as: mixed the fluorescent colloid (fluorescent resin) that forms with a fluorescent material (fluorescent powder) or mixed the fluorescent colloid (fluorescent resin) that forms by an epoxy resin (epoxy) with a fluorescent material (fluorescent powder) by a silica gel (silicon).
And then; Please cooperate shown in Fig. 3 d and Fig. 3 D; Between per two vertical light-emitting diode chip for backlight unit 20; Laterally cut this packing colloid 3; Be covered in the strip packing colloid 30 of each horizontal row on light-emitting diode chip for backlight unit row 2 apart from each other to form several, wherein the upper surface of each strip packing colloid 30 is this colloid cambered surface 300, and each strip packing colloid 30 have one be formed at these colloid cambered surface 300 front ends colloid exiting surface (colloid light-exiting surface) 302 (S106).
Then, please cooperate shown in Fig. 3 e and Fig. 3 E,, a frame unit 4 is covered on this substrate body 10 and these strip packing colloids 30 and be filled between per two strip packing colloids 30 (S108) through one second die unit M2.Wherein, This second die unit M2 is made up of second bed die (the second lower mold) M22 that one second mold (second upper mold) M21 and is used to carry this substrate body 10; And this second mold M21 has second channel (second channel) M210 of corresponding this frame unit 4, and the size of this second channel M210 and this frame unit 4 is measure-alike in addition.
At last; Please consult Fig. 3 e again; And cooperate shown in Fig. 3 f and Fig. 3 F, between per two vertical light-emitting diode chip for backlight unit 20, laterally cut this frame unit 4 and this substrate body 10; Forming several optical wands L1, and make this frame unit 4 be cut into the ccf layer 40 (S110) that several only let the colloid exiting surface (colloid light-exiting surface) 302 of the strip packing colloid 30 on each bar optical wand L1 expose respectively.Wherein, these ccf layers 40 are to can be light tight ccf layer (opaqueframe layer), for example: white box rack-layer (white frame layer).
See also Fig. 6, Fig. 6 a, reach shown in Fig. 6 A.Fig. 6 is the flow chart of second embodiment of method for packing of the present invention, and Fig. 6 a is the part encapsulation schematic flow sheet of second embodiment of encapsulating structure of the present invention, and Fig. 6 A is the part encapsulation flow process generalized section of second embodiment of encapsulating structure of the present invention.Flow chart by Fig. 6 can know that the step (S200 to S202) of second embodiment and (S206 to 8210) step (S100 to S102) and (S106 to S110) with first embodiment respectively are identical.That is step S200 is equal to Fig. 3 a of first embodiment and the schematic view illustrating of Fig. 3 A; Step S202 is equal to Fig. 3 b of first embodiment and the schematic view illustrating of Fig. 3 B.Step S206 is equal to Fig. 3 d of first embodiment and the schematic view illustrating of Fig. 3 D.Step S208 is equal to Fig. 3 e of first embodiment and the schematic view illustrating step S210 of Fig. 3 E is equal to Fig. 3 f of first embodiment and the schematic view illustrating of Fig. 3 F.
Moreover; Between step S202 and S206; The second embodiment of the present invention further comprises: at first; See also shown in Fig. 6 a and Fig. 6 A,, several strip packing colloids 30 are laterally covered respectively on these lateral luminous diode chip for backlight unit rows 2 through one first die unit M1 '; Wherein the upper surface of each strip packing colloid 30 has colloid cambered surface 300, and the side surface of each strip packing colloid 3 have one be formed at these colloid cambered surface 300 front ends colloid exiting surface (colloid light-exitingsurface) 302 (S206).
Wherein, This first die unit M1 ' is made up of first bed die (first lower mold) M12 ' institute that one first mold (first upper mold) M11 ' and is used to carry this substrate body 10; And this first mold M11 ' has several first passages (first channel) M110 '; Wherein the upper surface of each first passage M110 ' and front surface have mould cambered surface (the mold cambered surface) G100 ' of corresponding this colloid cambered surface 300 and mould front end face (mold lateralsurface) G101 ' of corresponding this colloid front end face (colloid lateral surface) 302 respectively, and the size of each first passage M110 ' and each strip packing colloid 30 is measure-alike.
See also shown in Figure 7ly, it is applied to the sketch map of lateral direction light emission for the encapsulating structure of light-emitting diode chip for backlight unit of the present invention.By knowing among the figure; (for example: the side direction light source that is used in the LGP M of mobile computer screen), the length l 2 of the pedestal S2 of this light-emitting diode chip for backlight unit D can be complied with the needs of heat radiation and extend (unlike the existing restriction that equally receives LGP M thickness) when light-emitting diode chip for backlight unit D of the present invention is applied to lateral direction light emission.In other words, the needs that can comply with heat radiation owing to the length l 2 of this pedestal S2 extend, and therefore light-emitting diode chip for backlight unit D of the present invention can obtain effective radiating effect, and then can avoid light-emitting diode chip for backlight unit D because of the overheated situation that burns out.
In sum; Light emitting diode construction of the present invention forms a continuous light-emitting zone when luminous, and the situation of not having blanking bar (dark band) and an optical attenuation (decay) takes place; And the present invention directly encapsulates (Chip On Board through chip; COB) processing procedure and utilize the mode of pressing mold (die mold) so that the present invention can shorten its processing procedure time effectively, and can be produced in a large number.Moreover, because LED encapsulation construction of the present invention under upright situation, can produce the effect of lateral direction light emission.Therefore, the present invention not only can produce the function of side direction light projector, more can turn round and look at the radiating effect that is applied in the thin case.
Certainly; The present invention also can have other various embodiments; Under the situation that does not deviate from spirit of the present invention and essence thereof; Those of ordinary skill in the art work as can make various corresponding changes and distortion according to the present invention, but these corresponding changes and distortion all should belong to the protection range of the appended claim of the present invention.
Claims (44)
1. the method for packing with light-emitting diode chip for backlight unit of high efficient lateral direction light emission effect is characterized in that, comprises the following steps:
One base board unit is provided;
Through the mode of matrix, several light-emitting diode chip for backlight unit are set on this base board unit respectively with electrically connecting, arrange to light-emitting diode chip for backlight unit to form the number horizontal row;
Through one first die unit; One packing colloid is longitudinally covered all lateral luminous diode chip for backlight unit rows go up the continuous one deck packing colloid of formation, wherein the upper surface of this packing colloid has several corresponding these lateral luminous diode chip for backlight unit rows' colloid cambered surface;
Between per two vertical light-emitting diode chip for backlight unit; Laterally cut this packing colloid; Be covered in the strip packing colloid of each horizontal row on light-emitting diode chip for backlight unit row apart from each other to form several; Wherein the upper surface of each strip packing colloid is this colloid cambered surface, and each strip packing colloid has one that be formed at this colloid cambered surface front end and produce a continuous light-emitting zone to avoid the colloid exiting surface of blanking bar and optical attenuation;
Through one second die unit, a frame unit is covered on this base board unit and these strip packing colloids and is filled between per two strip packing colloids; And
Between per two vertical light-emitting diode chip for backlight unit; Laterally cut this frame unit and this base board unit; Forming several optical wands, and make this frame unit be cut into the ccf layer that several only let the colloid exiting surface of the strip packing colloid on each bar optical wand expose respectively.
2. the method for packing with light-emitting diode chip for backlight unit of high efficient lateral direction light emission effect according to claim 1 is characterized in that: this base board unit is a printed circuit board (PCB), a soft base plate, an aluminium base, a ceramic substrate or a copper base.
3. the method for packing with light-emitting diode chip for backlight unit of high efficient lateral direction light emission effect according to claim 1 is characterized in that: this base board unit has a substrate body, and is formed at a positive conductive traces and the negative pole conductive traces on this substrate body respectively.
4. the method for packing with light-emitting diode chip for backlight unit of high efficient lateral direction light emission effect according to claim 3 is characterized in that: this substrate body comprises that a metal level and is formed in the bakelite layer on this metal level.
5. the method for packing with light-emitting diode chip for backlight unit of high efficient lateral direction light emission effect according to claim 3 is characterized in that: this positive and negative electrode conductive traces is aluminum steel road or silver-colored circuit.
6. the method for packing with light-emitting diode chip for backlight unit of high efficient lateral direction light emission effect according to claim 3 is characterized in that: each light-emitting diode chip for backlight unit has a positive terminal and a negative pole end of the positive and negative electrode conductive traces that is electrically connected at this base board unit respectively.
7. the method for packing with light-emitting diode chip for backlight unit of high efficient lateral direction light emission effect according to claim 6; It is characterized in that: each light-emitting diode chip for backlight unit positive and negative extreme through two corresponding leads and with the mode of routing produces with the positive and negative electrode conductive traces with this base board unit and to electrically connect.
8. the method for packing with light-emitting diode chip for backlight unit of high efficient lateral direction light emission effect according to claim 6; It is characterized in that: each light-emitting diode chip for backlight unit positive and negative extremely through several corresponding tin balls and to cover the mode of core produces with the positive and negative electrode conductive traces with this base board unit and to electrically connect.
9. the method for packing with light-emitting diode chip for backlight unit of high efficient lateral direction light emission effect according to claim 1 is characterized in that: each horizontal row is arranged on this base board unit with the arrangement mode of a straight line to light-emitting diode chip for backlight unit row.
10. the method for packing with light-emitting diode chip for backlight unit of high efficient lateral direction light emission effect according to claim 1; It is characterized in that: this first die unit is made up of first bed die that one first mold and is used to carry this base board unit; And this first mold has first passage; Wherein this first passage has several grooves, and the upper surface of each groove and front surface have the mould cambered surface of corresponding this colloid cambered surface and the mould front end face of corresponding this colloid front end face respectively.
11. the method for packing with light-emitting diode chip for backlight unit of high efficient lateral direction light emission effect according to claim 1 is characterized in that: this packing colloid is for to mix the fluorescent colloid that forms by a silica gel with a fluorescent material.
12. the method for packing with light-emitting diode chip for backlight unit of high efficient lateral direction light emission effect according to claim 1 is characterized in that: this packing colloid is for to mix the fluorescent colloid that forms by an epoxy resin with a fluorescent material.
13. the method for packing with light-emitting diode chip for backlight unit of high efficient lateral direction light emission effect according to claim 1; It is characterized in that: this second die unit is made up of second bed die that one second mold and is used to carry this base board unit; And this second mold has the second channel of corresponding this frame unit, and the size of this second channel and this frame unit is measure-alike in addition.
14. the method for packing with light-emitting diode chip for backlight unit of high efficient lateral direction light emission effect according to claim 1 is characterized in that: this ccf layer is light tight ccf layer.
15. the method for packing with light-emitting diode chip for backlight unit of high efficient lateral direction light emission effect according to claim 14 is characterized in that: this light tight ccf layer is the white box rack-layer.
16. the method for packing with light-emitting diode chip for backlight unit of high efficient lateral direction light emission effect is characterized in that, comprises the following steps:
One base board unit is provided;
Through the mode of matrix, several light-emitting diode chip for backlight unit are set on this base board unit respectively with electrically connecting, arrange to light-emitting diode chip for backlight unit to form the number horizontal row;
Through one first die unit; With laterally continuous respectively being covered on these lateral luminous diode chip for backlight unit rows of several strip packing colloids; Wherein the upper surface of each strip packing colloid has the colloid cambered surface, and the side surface of each strip packing colloid has one that be formed at this colloid cambered surface front end and produce a continuous light-emitting zone to avoid the colloid exiting surface of blanking bar and optical attenuation;
Through one second die unit, a frame unit is covered on this base board unit and these strip packing colloids and is filled between per two strip packing colloids; And
Between per two vertical light-emitting diode chip for backlight unit; Laterally cut this frame unit and this base board unit; Forming several optical wands, and make this frame unit be cut into the ccf layer that several only let the colloid exiting surface of the strip packing colloid on each bar optical wand expose respectively.
17. the method for packing with light-emitting diode chip for backlight unit of high efficient lateral direction light emission effect according to claim 16 is characterized in that: this base board unit is a printed circuit board (PCB), a soft base plate, an aluminium base, a ceramic substrate or a copper base.
18. the method for packing with light-emitting diode chip for backlight unit of high efficient lateral direction light emission effect according to claim 16 is characterized in that: this base board unit has a substrate body, and is formed at a positive conductive traces and the negative pole conductive traces on this substrate body respectively.
19. the method for packing with light-emitting diode chip for backlight unit of high efficient lateral direction light emission effect according to claim 18 is characterized in that: this substrate body comprises that a metal level and is formed in the bakelite layer on this metal level.
20. the method for packing with light-emitting diode chip for backlight unit of high efficient lateral direction light emission effect according to claim 18 is characterized in that: this positive and negative electrode conductive traces is aluminum steel road or silver-colored circuit.
21. the method for packing with light-emitting diode chip for backlight unit of high efficient lateral direction light emission effect according to claim 18 is characterized in that: each light-emitting diode chip for backlight unit has a positive terminal and a negative pole end of the positive and negative electrode conductive traces that is electrically connected at this base board unit respectively.
22. the method for packing with light-emitting diode chip for backlight unit of high efficient lateral direction light emission effect according to claim 21; It is characterized in that: each light-emitting diode chip for backlight unit positive and negative extreme through two corresponding leads and with the mode of routing produces with the positive and negative electrode conductive traces with this base board unit and to electrically connect.
23. the method for packing with light-emitting diode chip for backlight unit of high efficient lateral direction light emission effect according to claim 21; It is characterized in that: each light-emitting diode chip for backlight unit positive and negative extremely through several corresponding tin balls and to cover the mode of core produces with the positive and negative electrode conductive traces with this base board unit and to electrically connect.
24. the method for packing with light-emitting diode chip for backlight unit of high efficient lateral direction light emission effect according to claim 16 is characterized in that: each horizontal row is arranged on this base board unit with the arrangement mode of a straight line to light-emitting diode chip for backlight unit row.
25. the method for packing with light-emitting diode chip for backlight unit of high efficient lateral direction light emission effect according to claim 16; It is characterized in that: this first die unit is made up of first bed die that one first mold and is used to carry this base board unit; And this first mold has several first passages; Wherein the upper surface of each first passage and front surface have the mould cambered surface of corresponding this colloid cambered surface and the mould front end face of corresponding this colloid front end face respectively, and the size of each first passage and each strip packing colloid is measure-alike.
26. the method for packing with light-emitting diode chip for backlight unit of high efficient lateral direction light emission effect according to claim 16 is characterized in that: each strip packing colloid is for to mix the fluorescent colloid that forms by a silica gel with a fluorescent material.
27. the method for packing with light-emitting diode chip for backlight unit of high efficient lateral direction light emission effect according to claim 16 is characterized in that: each strip packing colloid is for to mix the fluorescent colloid that forms by an epoxy resin with a fluorescent material.
28. the method for packing with light-emitting diode chip for backlight unit of high efficient lateral direction light emission effect according to claim 16; It is characterized in that: this second die unit is made up of second bed die that one second mold and is used to carry this base board unit; And this second mold has the second channel of corresponding this frame unit, and the size of this second channel and this frame unit is measure-alike in addition.
29. the method for packing with light-emitting diode chip for backlight unit of high efficient lateral direction light emission effect according to claim 16 is characterized in that: this ccf layer is light tight ccf layer.
30. the method for packing with light-emitting diode chip for backlight unit of high efficient lateral direction light emission effect according to claim 29 is characterized in that, this light tight ccf layer is the white box rack-layer.
31. the LED encapsulation construction with high efficient lateral direction light emission effect is characterized in that, comprising:
One base board unit;
One luminescence unit, it has several and is arranged at the light-emitting diode chip for backlight unit on this base board unit electrically;
One packing colloid unit; It has the strip packing colloid that is covered in continuously on these light-emitting diode chip for backlight unit, and wherein the upper surface of this strip packing colloid and front surface have colloid cambered surface and respectively and be used to produce continuous light-emitting zone to avoid the colloid exiting surface of blanking bar and optical attenuation; And
One frame unit, it is covered on this base board unit for one deck and coats the ccf layer that this strip packing colloid only exposes this colloid exiting surface.
32. the LED encapsulation construction with high efficient lateral direction light emission effect according to claim 31 is characterized in that: this base board unit is a printed circuit board (PCB), a soft base plate, an aluminium base, a ceramic substrate or a copper base.
33. the LED encapsulation construction with high efficient lateral direction light emission effect according to claim 31 is characterized in that: this base board unit has a substrate body, and is formed at a positive conductive traces and the negative pole conductive traces on this substrate body respectively.
34. the LED encapsulation construction with high efficient lateral direction light emission effect according to claim 33 is characterized in that: this substrate body comprises that a metal level and is formed in the bakelite layer on this metal level.
35. the LED encapsulation construction with high efficient lateral direction light emission effect according to claim 33 is characterized in that: this positive and negative electrode conductive traces is aluminum steel road or silver-colored circuit.
36. the LED encapsulation construction with high efficient lateral direction light emission effect according to claim 33 is characterized in that: each light-emitting diode chip for backlight unit has a positive terminal and a negative pole end of the positive and negative electrode conductive traces that is electrically connected at this base board unit respectively.
37. the LED encapsulation construction with high efficient lateral direction light emission effect according to claim 36; It is characterized in that: each light-emitting diode chip for backlight unit positive and negative extreme through two corresponding leads and with the mode of routing electrically connects to produce with this positive and negative electrode conductive traces.
38. the LED encapsulation construction with high efficient lateral direction light emission effect according to claim 36; It is characterized in that: each light-emitting diode chip for backlight unit positive and negative extremely through several corresponding tin balls and to cover the mode of core electrically connects to produce with this positive and negative electrode conductive traces.
39. the LED encapsulation construction with high efficient lateral direction light emission effect according to claim 31 is characterized in that: these light-emitting diode chip for backlight unit are arranged on this base board unit with the arrangement mode of a straight line.
40. the LED encapsulation construction with high efficient lateral direction light emission effect according to claim 31 is characterized in that: these light-emitting diode chip for backlight unit are arranged on this base board unit with the arrangement mode of several straight lines.
41. the LED encapsulation construction with high efficient lateral direction light emission effect according to claim 31 is characterized in that: this strip packing colloid is for to mix the fluorescent colloid that forms by a silica gel with a fluorescent material.
42. the LED encapsulation construction with high efficient lateral direction light emission effect according to claim 31 is characterized in that: this strip packing colloid is for to mix the fluorescent colloid that forms by an epoxy resin with a fluorescent material.
43. the LED encapsulation construction with high efficient lateral direction light emission effect according to claim 31 is characterized in that: this ccf layer is light tight ccf layer.
44. according to the described LED encapsulation construction with high efficient lateral direction light emission effect of claim 43, it is characterized in that: this light tight ccf layer is the white box rack-layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008100000843A CN101477954B (en) | 2008-01-03 | 2008-01-03 | LED chip encapsulation method and construction having high efficient lateral direction light emission effect |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008100000843A CN101477954B (en) | 2008-01-03 | 2008-01-03 | LED chip encapsulation method and construction having high efficient lateral direction light emission effect |
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| CN101477954A CN101477954A (en) | 2009-07-08 |
| CN101477954B true CN101477954B (en) | 2012-01-04 |
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| WO2011057102A1 (en) * | 2009-11-05 | 2011-05-12 | Luminit Llc | Method to Provide Microstructure for Encapsulated High-Brightness Led Chips |
| CN102263187A (en) * | 2010-05-31 | 2011-11-30 | 展晶科技(深圳)有限公司 | Light emitting diode packaging structure and manufacture method thereof |
| CN109084216B (en) * | 2017-07-19 | 2021-12-21 | 广州超维光电科技有限责任公司 | Integrally-packaged type row unit based on stage-like structure |
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