CN101476941A - Integrated micro-mechanical thermopile infrared detection system and method for producing the same - Google Patents
Integrated micro-mechanical thermopile infrared detection system and method for producing the same Download PDFInfo
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Abstract
The invention provides an integrated micromechanical thermopile infrared detection system and a manufacture method thereof. The system comprises a thermopile detector and a signal processing circuit, wherein the signal processing circuit comprises a preposed amplifier, a band-pass filter, a main amplifier and an oscillator. The method is characterized in that integrated design and manufacture of a uniwafer of the thermopile detector and the signal processing circuit are realized; and compatibility of a MEMS sensor and a CMOS circuit can be realized by manufacturing the thermopile detector and the signal processing circuit simultaneously and using a standard CMOS process. The structure of the thermopile detector in the system comprises a (silicon) matrix, a framework, a thermoelectric couple, a support arm, an infrared absorption layer, etching openings; and the intermediate suspended infrared absorption layer can be provided with the etching openings with different shapes, and dry etching working gas enters a substrate etched silicon releasing structure through the etching openings. The structure of the signal processing circuit in the system uses wave chopping technology to reduce the effect of low-frequency noise on a signal.
Description
Technical field
The present invention relates to a kind of integrated micro-mechanical thermopile infrared detection system and preparation method thereof, the present invention relates to a kind of micro-mechanical thermopile infrared detection system based on MEMS (Micro-Electro-Mechanical System) sensor and cmos signal treatment circuit and preparation method thereof or rather, belong to the infrared eye field.
Background technology
Along with infrared detection technique improves day by day in the status in military and civilian field, non-refrigeration infrared sensor development rapidly.Thermopile IR detector is a kind of thermal infrared detector that develops the earliest, its principle of work be the Seebeck effect [T.H.Geballe and G.W.Hull, " Seebeck Effect inSilicon; " Phys.Rev., vol.98, No.4, pp.940-947, May 1955.].This effect is pointed out the thermocouple that two kinds of different materials are formed, if having temperature difference between two nodes of closed-loop path, will produce electromotive force in the loop.Early stage thermopile IR detector is the method for utilizing vacuum coating, thermocouple material deposited to obtain on plastics or the alumina substrate, and device size is bigger, also is difficult for producing in batches.Development along with microelectromechanical systems MEMS technology, nineteen eighty-two Univ Michigan-Ann Arbor USA [G.R.Lahiji and K.D.Wise such as K.D.Wise, " A Batch-Fabricated SiliconThermopile Infrared Detector; " IEEE Trans.Electron Devices, vol.ED-29, no.1, pp.14-23, January 1982.] take the lead in adopting the micromechanics means to make the silica-based thermopile IR detector of two kinds of closing membrane structures, the thermocouple material is respectively Bi-Sb and Si-Au.According to the materials classification that constitutes thermocouple, mainly comprise the metal thermocouple, the silicon-metal thermocouple, and silicon-silicon thermocouple [1.M.C.Foote, E.W.Jones and T.Caillat, " Uncooled Thermopile InfraredDetector Linear Arrays with Detectivity Greater than 10
9CmHz
1/2/ W; " IEEETrans.Electron Devices, vol.45, no.9, pp.1896-1902, September1998.] [2.W.G.Baer, K.Najafi, K.D.Wise and R.S.Toth, " A32-elementmicromachined thermal imager with on-chip multiplexing; " Sens.Actuators A:Phys.vol.48, issue1, pp.47-54, May 1995.] [3.R.Lenggenhager, H.Baltes and T.Elbel, " Thermoelectric infrared sensorsin CMOS technology, " Sens.Actuators A:Phys.vol.37-38, pp.216-220, June-August 1998.] [4.T.Akin, Z.Olgun, O.Akar, H.Kulah, " Anintegrated thermopile structure with high responsivity using anystandard CMOS process; " Sens.Actuators A:Phys., vol.66, issue1-3, pp.218-224, April 1998.].The material that constitutes thermocouple has not only been widened in these researchs, has also explored different structure release process.For example increased monox-silicon nitride composite dielectric film, used wet etching liquid such as TMAH, attempted from processes such as silicon chip front releasing structures.
Because how the similarity of MEMS and CMOS technology realizes the other direction that the integrated researchers of being of monolithic pay close attention to thermopile sensor and signal read circuit.Continuous development along with IC technology, technological level continues to improve, characteristic dimension constantly descends, the method of a kind of low cost and high reliability is provided to the making of the integrated infrared eye of thermoelectric pile, the detector ratio of making by IC standard technology is easier to sensing circuit integrated simultaneously, be produced on in the middle of the chip piece, improve the quality of detector output signal, the microminiaturization of realization sensor-based system.[I.H.Choi and K.D.Wise such as K.D.Wise in 1986, " ASilicon-Thermopile-Based Infrared Sensing Array for Use in AutomatedManufacturing; " IEEE Trans.Electron Devices, vol.ED-33, no.1, pp.72-79, January 1998.] detector made integrated simple MUX circuit.And then, they had made the thermopile sensor array [A.D.Oliver of 32 * 32 pixels on the basis of single sensing unit in 1999, K.D.Wise, " A1024-element bulk-micromachined thermopile infraredimaging array; " Sens.Actuators A:Phys., vol.73, issue 3, pp.222-231, March1999.].Their used thermocouple material is n-Poly Si/p-Poly Si, and the method that adopts the front and back corrosion to combine discharges heat insulating construction.Calendar year 2001, [A.Schaufelbuhl such as the A.Schaufelbuhl of ETH, N.Schneeberger, U.Munch, " Uncooled low-lost thermal imagerbased on micromachined CMOS integrated sensor array; " IEEEJ.MEMS, vol.10, issue4, pp.503-510, December 2001.] reported a kind of thermoelectric pile infrared sensing array of 10 * 10 pixels, this method for making fully with the CMOS process compatible of commercial usefulness, the 1 μ m CMOS technology of utilizing EM company to provide.Nineteen ninety-five in addition, [M.M ü ller such as M.M ü ller, W.Budde, R.Gottfried-Gottfried, " A Thermoelectric Infrared Radiation Sensor withMonolithically Integrated Amplifier Stage and Temperature Sensor, " The 8
ThInternational Conference on Solid-State Sensors and Actuators, and EurosensorsIX, Stockholm, Sweden, June 25-29,1995, vol.2, pp.640-643] on the SOI matrix, made and comprised thermoelectric pile, the integrated infrared eye of analogue amplifier and temperature sensor.
In the integrated infra-red sensing system of whole monolithic, signal read circuit is a very important aspect, and final system performance is had very significant effects.In the article of relevant integrated infrared sensor, design aspect circuit is also fewer, relatively that success is same research report [C.Menolfi and Q.Huang from ETH, " A low-noise CMOSinstrumentation amplifier forthermoelectric infrared detectors; " IEEE J.Solid-StateCircuits, vol.SC-32, no.7, pp.968-976, July1997.], the low frequency signal that utilizes wave chopping technology that infrared sensor is produced carries out low noise to be handled, and further improves the performance of system.
Usually the requirement to the sensor-specific amplifier is in the sensor output signal bandwidth higher gain to be arranged, low equivalent input noise, and very strong inhibiting effect to be arranged to DC offset voltage.The technology that present stage is used to reduce 1/f noise and offset voltage mainly contains [Yao Lei, low noise CMOS interface circuit research in the Monolithic integrated MEMS infrared sensor, Postgraduate School, Chinese Academy of Sciences's master thesis, 2007.5]: technology that returns to zero certainly (Auto Zero) and wave chopping technology (Chopper Stabilized)].
Summary of the invention
Problem at prior art exists the present invention proposes a kind of integrated micro-mechanical thermopile infrared detection system and preparation method thereof.Described infrared detection system can be divided into thermopile IR detector and signal processing circuit two large divisions.Fig. 1 is a system chart, and Fig. 2 is system's sectional view.Wherein, the signal processing circuit 6 among Fig. 2 comprises the prime amplifier 2 among Fig. 1, bandpass filter 3, and main amplifier 4 and chopper 5,7 of thermopile detectors are the sensors 1 among Fig. 1.System proposed by the invention has taken into full account and has realized the processing compatibility of sensor and circuit, selects from material, and structural design, improvement has been done in aspects such as process sequences.
The present invention is intended to improve the compatibility of MEMS thermopile sensor and cmos signal treatment circuit, therefore proposed thermopile IR detector that a kind of employing discharges by the front openings dry etch process to overcome the influence of wet etching to cmos circuit, Fig. 3 is the thermopile IR detector vertical view.The most tangible characteristic of this structure is to utilize dry etching from the front etch monocrystalline substrate, thereby forms the infrared absorption layer of suspension film structure.Dry etching has fabulous selectivity, can select some only to corrode silicon, and to the minimum gas of material corrosion speed such as aluminium (as XeF
2) as working gas.So just can adopt material the most frequently used in the standard CMOS process to constitute thermopair (as Al/Poly Si, Al/Si, n-PolySi/p-Poly Si, Au/Si etc.), thereby improve compatibility greatly.Whole thermopile IR detector comprises matrix silicon 13, framework 9, thermopair 12, sway brace 11, infrared absorption layer 8, six parts such as corrosion opening 10 grades.Wherein, the matrix infrared absorption layer middle with being suspended in framework constitutes the cold junction district and the thermojunction district of thermoelectric pile respectively, and sway brace plays the purpose of connecting frame and infrared absorption district and carrying thermoelectric pile.Sway brace and infrared absorption layer are to be made of the monox of deposit on monocrystalline silicon and silicon nitride composite membrane.The concrete feature of this structure is to have made intermediate suspended infrared absorption layer, and has designed the corrosion opening that is used for the dry etching matrix.Because the isotropy of dry etching, the shape of corrosion opening can be varied, and being different from the wet etching opening must strict arrange along particular crystal orientation, thereby increased the dirigibility of design greatly.
Signal processing circuit is another chief component of system.General thermopile IR detector output signal characteristics is as follows: amplitude little (a few to tens of μ V), and frequency low (a few Hz), ground unrest strong (being mainly 1/f noise), resistance is about tens to hundreds of k Ω.With reference to the performance index of discrete sensor treatment circuit, and in conjunction with the output signal characteristics of thermoelectric pile, the present invention adopts wave chopping technology to weaken the influence of low-frequency noise to signal.Circuit mainly comprises four parts: prime amplifier, bandpass filter, main amplifier and chopper.Wherein, chopper comprises oscillator and modulation-demodulation circuit, and oscillator provides the diphasic clock signal for modulation-demodulation circuit.The principle that wave chopping technology reduces 1/f noise is: at first modulator is modulated to high frequency with original input signal, enter amplifier then and amplify, at this moment in the signal with regard to 1/f noise and circuit offset voltage, but all be in low frequency.Separate timing, the useful signal of high frequency is reduced low frequency, and the 1/f noise of low frequency and circuit offset voltage are modulated onto high frequency, just can obtain not having the amplifying signal of 1/f noise and offset voltage influence at last by a low-pass filter, realize the amplification of feeble signal.The specific implementation of oscillator can be varied, but all comprise frequency selection network and feedback network.Modulation-demodulation circuit can use the MOS on-off circuit to constitute.
Prime amplifier and main amplifier separately design mainly are for the ease of regulating circuit gain and two parameters of signal bandwidth.The effect of prime amplifier is that the signal to faint infrared eye tentatively amplifies, convenient follow-up Filtering Processing, if enlargement factor too conference before Filtering Processing, introduce very big noise.The specific performance index comprises: enlargement factor (10-30), and high input impedance (hundreds of M Ω), high CMRR (〉=80dB); Low input noise voltage (＜10nV/ √ Hz).The effect of main amplifier is that a suitable scope is adjusted in the gain of entire circuit, and its enlargement factor should be more than 100, will satisfy low input noise (＜10nV/ √ Hz) and high cmrr CMRR ((〉=80dB) requirement simultaneously.The centre frequency of bandpass filter should be maintained fixed relation with the signal frequency of oscillator, and the simplest situation is both unanimities.The overall gain of entire circuit is approximately 60-80dB, and the output signal of thermopile IR detector is amplified to tens mV magnitudes.
In sum, integrated micro-mechanical thermopile infrared detection system provided by the invention comprises thermopile detector and signal processing circuit two large divisions, and wherein signal processing circuit comprises prime amplifier, bandpass filter, main amplifier and oscillator four parts; It is characterized in that realizing the integrated design of monolithic of thermopile detector and signal processing circuit, made and test.
Thermopile detector structure in the described integrated micro-mechanical thermopile infrared detection system comprises (silicon) matrix, framework, thermopair, sway brace, infrared absorption layer, six parts such as corrosion opening; It is characterized in that intermediate suspended infrared absorption layer can have difform corrosion opening, the dry etching working gas enters substrate etched silicon releasing by the corrosion opening; Described corrosion opening is to react passage is provided for the dry etching working gas enters substrate, can be designed to square, circle, multiple shape such as fan-shaped needn't be considered specific crystal orientation.
Thermopile detector structure in the described integrated micro-mechanical thermopile infrared detection system is characterized in that the right geometric configuration of thermopair can be parallel to each limit of framework, can be along the diagonal of framework, can be along framework radially wait multiple scheme.
Signal processing circuit structure in the described integrated micro-mechanical thermopile infrared detection system is characterized in that using wave chopping technology to weaken the influence of low-frequency noise to signal.
System proposed by the invention adopts standard N trap CMOS technology on method for making, thermopile sensor and signal processing circuit are made simultaneously, and the main technique step comprises:
(1) select the P+ silicon chip as substrate, initial oxidation P-epitaxial loayer.
(2) photoetching N trap on the P-epitaxial loayer, ion injects phosphorus, and well region advances.
(3) growth thermal oxidation silicon, the LPCVD deposited silicon nitride.
(4) photoetching cmos circuit active area, etch silicon nitride and monox.
(5) etching silicon chip, the growth field oxide.
(6) etching is removed the silicon nitride and the monox in cmos circuit zone.
(7) active area growth gate oxide.
(8) deposit spathic silicon, photoetching forms the grid of cmos circuit and the polysilicon strip of thermoelectric pile respectively.
(9) PMOS district boron ion implantation forms source electrode and drain electrode, and other zone makes protection with photoresist.
(10) the nmos area ion injects phosphorus, forms source electrode and drain electrode, and other zone makes protection with photoresist.
(11) deposit low temperature oxide layer, polishing, lithography fair lead.
(12) depositing metal, photoetching, corrosion forms the line of cmos circuit and the bonding jumper of thermoelectric pile.
(13) photoetching thermoelectric pile corrosion opening.
(14) dry etching substrate, the heat release pile.
This shows, the method for making of integrated micro-mechanical thermopile infrared detection system of the present invention, it is characterized in that using standard CMOS process to make thermopile detector and signal processing circuit simultaneously, realized that MEMS sensor and cmos circuit select from material, layout design, the compatibility of aspects such as technological process.
(1) it is characterized in that to use the N trap, substitute by P trap or two trap CMOS technology; Also promptly use in these three kinds any;
(2) it is characterized in that described monox and silicon nitride can be used as the infrared absorption layer of thermoelectric pile;
(3) it is characterized in that described polysilicon can complete simultaneously as a kind of material of thermoelectric pile and the grid of cmos circuit;
(4) it is characterized in that described fairlead can be simultaneously as the fairlead of thermopile IR detector and the through hole of cmos circuit;
(5) it is characterized in that described metal can be simultaneously as the composition material of thermoelectric pile and the line of cmos circuit.
Description of drawings
Fig. 1 is an integrated micro-mechanical thermopile infrared detection system block diagram provided by the present invention.
Fig. 2 is an integrated micro-mechanical thermopile infrared detection system sectional view provided by the present invention.
Fig. 3 is the thermopile detector vertical view in the system provided by the present invention.
Fig. 4 is integrated micro-mechanical thermopile infrared detection system technological process provided by the present invention.
Fig. 4-1: silicon chip is prepared, initial oxidation;
Fig. 4-2: form the N trap;
Fig. 4-3: thermal oxide, LPCVD deposited silicon nitride;
Fig. 4-4: photoetching active area;
Fig. 4-5: growth field oxide;
Fig. 4-6: form the CMOS active area;
Fig. 4-7: growth gate oxide;
Fig. 4-8: photoetched grid and polysilicon strip;
Fig. 4-9:PMOS source drain boron ion implantation;
Fig. 4-10:NMOS source drain ion injects phosphorus;
Fig. 4-11: lithography fair lead;
Fig. 4-12: photoetching metal connecting line;
Fig. 4-13: photoetching thermoelectric pile corrosion opening;
Fig. 4-14: dry etching heat release pile.
The vertical view of the thermopile detector among Fig. 5: the embodiment 2.
The implication of each digitized representation is among the figure:
1. sensor, 2. prime amplifier, 3. bandpass filter, 4. main amplifier, 5. chopper, 6. signal processing circuit, 7. thermopile detector, 8. infrared absorption layer, 9. framework, 10. corrosion opening, 11. sway braces, 12. thermopairs are right, (13. silicon) matrix, 14.P-epitaxial loayer, 15. monox, 16.N trap, 17. silicon nitrides, 18. field oxides, 19. gate oxide, 20. polysilicons, 21. photoresists, 22. boron, 23.PMOS source drain, 24. phosphorus, 25.NMOS source drain, 26. cryogenic oxidation silicons, 27. fairleads, 28. aluminium, 29. corrosion openings, 30. cavitys
Embodiment
Below in conjunction with technological process provided by the present invention, specifically illustrate the concrete structure of this detector.
Embodiment 1
The main technique step comprises:
(1) the P+ silicon chip (not drawing among the figure) of selecting (100) crystal orientation is as substrate, resistivity 10 Ω cm, initial oxidation P-epitaxial loayer 14 growing silicon oxides
(2) photoetching N trap 16 on the P-epitaxial loayer, ion injects phosphorus, dosage 2E12cm
-2, energy 60keV, well region advances, about junction depth 6.0 μ m.
(3) growth thermal oxidation silicon
The LPCVD deposit thickness is
Silicon nitride 17.
(4) photoetching cmos circuit active area, etch silicon nitride and monox.
(5) etching silicon chip, growth are approximately
Field oxide 18.
(6) etching is removed the silicon nitride and the monox in cmos circuit zone.
(7) the active area grow thick approximately
Gate oxide 19.
(8) LPCVD deposits the thick polysilicon 20 of 2.0 μ m, boron ion implantation, dosage 5E15cm
-2, energy 80keV, photoetching forms the grid of cmos circuit and the polysilicon strip of thermoelectric pile respectively.
(9) PMOS district boron ion implantation 22, dosage 8E15cm
-2, energy 60keV forms source electrode and drain electrode 23, and other zone makes 21 protections with photoresist.
(10) the nmos area ion injects phosphorus 24, dosage 6E15cm
-2, energy 80keV forms source electrode and drain electrode 25, and other zone makes 21 protections with photoresist.
(11) deposit
Low temperature oxide layer, the polishing, lithography fair lead 27.
(12) aluminium 28 of deposit 2.0 μ m, photoetching, corrosion forms the line of cmos circuit and the bonding jumper of thermoelectric pile.
(13) photoetching thermoelectric pile corrosion opening 29.
(14) XeF
2Etched substrate forms cavity 30, the heat release pile.
More than each the step corresponding to Fig. 4-1 to shown in Fig. 4-14.
Its concrete implementation step is identical with embodiment 1, and the key distinction is: the thermoelectric pile geometric configuration among the embodiment 1 is revised as structure among Fig. 5.The right geometric configuration of thermopair be not shown in Figure 3 radially but be parallel to each limit of framework; Corrosion open design squarely rather than circle shown in Figure 3 all needn't be considered special crystal orientation.
Embodiment 3
Its concrete implementation step is identical with embodiment 1, and the key distinction is: with the N trap CMOS process modifications among the embodiment 1 is P trap or two trap CMOS technology.With P trap CMOS technology is example, and the processing step of change is as follows: (a) change the P+ silicon chip in the step (1) among the embodiment 1 into the N+ silicon chip as substrate.(b) step (2) among the embodiment 1 is revised as " photoetching P trap on the N-epitaxial loayer, boron ion implantation, dosage are 5E12cm
-2, energy is 60keV, well region advances, about junction depth 6.0 μ m ".(c) with in the step (8) among the embodiment 1 " boron ion implantation, dosage are 5E15cm
-2, energy is 80keV " and be revised as that " ion injects phosphorus, and dosage is 5E15cm
-2, energy is 60keV ".(d) with in the step (9) among the embodiment 1 " PMOS district boron ion implantation 22, dosage are 8E15cm
-2, energy is 60keV " and be revised as that " the nmos area ion injects phosphorus, and dosage is 6E15cm
-2, energy is 80keV ".(e) with in the step (10) among the embodiment 1 " the nmos area ion injects phosphorus 24, and dosage is 6E15cm
-2, energy is 80keV " and be revised as that " PMOS district boron ion implantation, dosage are 8E15cm
-2, energy is 60keV ".Other step is constant.
Claims (10)
1, a kind of integrated micro-mechanical thermopile infrared detection system is characterized in that described micro-mechanical thermopile infrared detection system, comprises thermopile detector and signal processing circuit two parts, has realized that this is two-part integrated; Wherein signal processing circuit is to be made of prime amplifier, bandpass filter, main amplifier and chopper successively; Thermopile detector is made of, sway brace, infrared absorption layer and corrosion opening six parts basic, framework, thermopair; The matrix infrared absorption layer middle with being suspended in framework constitutes the cold junction district and the thermojunction district of thermopile detector respectively; Sway brace connecting frame and infrared absorption district; Intermediate suspended infrared absorption layer has difform corrosion opening.
2, by the described integrated micro-mechanical thermopile infrared detection system of claim 1, working gas enters substrate and reacts passage is provided when it is characterized in that described corrosion opening for dry etching, this corrosion open design squarely, circle or fan-shaped, and needn't consider specific crystal orientation.
3,, it is characterized in that the right geometric configuration of described thermopair is to be parallel to each limit of framework, along the diagonal of framework or along framework radially by the described integrated micro-mechanical thermopile infrared detection system of claim 1.
4, by the described integrated micro-mechanical thermopile infrared detection system of claim 1, it is characterized in that sway brace and infrared absorption layer are to be made of monox that deposits and silicon nitride composite membrane on single crystal silicon substrate.
5, by the described integrated micro-mechanical thermopile infrared detection system of claim 1, it is characterized in that described chopper comprises oscillator and modulation-demodulation circuit, to weaken the influence of low-frequency noise to signal; Oscillator provides the diphasic clock signal for modulation-demodulation circuit.
6, by the described integrated micro-mechanical thermopile infrared detection system of claim 1, it is characterized in that the prime amplifier enlargement factor is 10～30; The multiple of main amplifier greater than 100, two amplifiers have simultaneously＜the low input noise of 10nVNHZ and 〉=high cmrr of 80dB.
7, by the described integrated micro-mechanical thermopile infrared detection system of claim 1, it is characterized in that the centre frequency of bandpass filter is consistent with the signal frequency of oscillator.
8, by the described integrated micro-mechanical thermopile infrared detection system of claim 1, the gain that it is characterized in that signal processing circuit is 60～80dB, and the output signal of thermopile IR detector is amplified to tens mV magnitudes.
9, make the method for integrated micro-mechanical thermopile infrared detection system as claimed in claim 1, it is characterized in that adopting standard CMOS process, thermopile IR detector and signal processing circuit notice are made, and processing step comprises:
(1) the P+ silicon chip of selecting (100) crystal orientation is as substrate, resistivity 10 Ω cm, growing silicon oxide 6000 on the initial oxidation P-epitaxial loayer
(2) photoetching N trap on the P-epitaxial loayer, ion injects phosphorus, and dosage is 2E12cm
-2, energy 60keV, well region advances, and junction depth is 6.0 μ m;
(3) growth thermal oxidation silicon 5000
, the LPCVD deposit thickness is 2000
Silicon nitride;
(4) photoetching cmos circuit active area, etch silicon nitride and monox;
(5) etching silicon chip, growth 8000
Field oxide;
(6) etching is removed the silicon nitride and the monox in cmos circuit zone;
(7) the active area grow thick is 1500
Gate oxide;
(8) LPCVD deposits the thick polysilicon of 2.0 μ m, boron ion implantation, dosage 5E15cm
-2, energy 80keV, photoetching forms the grid of cmos circuit and the polysilicon strip of thermoelectric pile respectively;
(9) PMOS district boron ion implantation, dosage is 8E15cm
-2, energy 60keV forms source electrode and drain electrode, and other zone makes protection with photoresist;
(10) the nmos area ion injects phosphorus 24, and dosage is 6E15cm
-2, energy 80keV forms source electrode and drain electrode, and other zone makes protection with photoresist;
(11) deposit 8000
Low temperature oxide layer, the polishing, lithography fair lead;
(12) aluminium of deposit 2.0 μ m, photoetching, corrosion forms the line of cmos circuit and the bonding jumper of thermoelectric pile;
(13) photoetching thermoelectric pile corrosion opening;
(14) XeF
2Etched substrate forms cavity, the heat release pile.
10, by the method for making of the described integrated micro-mechanical thermopile infrared detection system of claim 9, it is characterized in that:
(a) the N trap is that P trap or two trap CMOS technology substitute;
(b) polysilicon in the step (8) and the grid of cmos circuit are made simultaneously;
(c) fairlead in the step (11) is simultaneously as the fairlead of thermopile IR detector and the through hole of cmos circuit;
(d) metal in the step (12) is simultaneously as the composition material of thermopile detector and the line of cmos circuit.
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