CN101475134A - Devices having vertically-disposed nanofabric articles and methods of making the same - Google Patents

Abstract

Electro-mechanical switches and memory cells using vertically-disposed nanofabric articles and methods of making the same are described. An electro-mechanical device, includes a structure having a major horizontal surface and a channel formed therein. A conductive trace is in the channel; and a nanotube article vertically suspended in the channel, in spaced relation to a vertical wall of the channel. The article is electro-mechanically deflectable in a horizontal direction toward the conductive trace. Under certain embodiments, the vertically suspended extent of the nanotube article is defined by a thin film process. Under certain embodiments, the vertically suspended extent of the nanotube article is about 50 nanometers or less. Under certain embodiments, the nanotube article is clamped with a conducting material disposed in porous spaces between some nanotubes of the nanotube article. Under certain embodiments, the nanotube article is formed from a porous nanofabric. Under certain embodiments, the nanotube article is electromechanically deflectable into contact with the conductive trace and the contact is either a volatile state or non-volatile state depending on the device construction. Under certain embodiments, the vertically oriented device is arranged into various forms of three-trace devices. Under certain embodiments, the channel may be used for multiple independent devices, or for devices that share a common electrode.

Description

The device and preparation method thereof that contains the nanofabric articles of arranged vertical

Patent application of the present invention is that international application no is that PCT/US2004/004107 is on February 12nd, 2004 according to the applying date, the application number that enters the China national stage is 200480003939.8, and name is called the dividing an application of application for a patent for invention of " device and preparation method thereof that contains the nanofabric articles of arranged vertical ".

Related application

According to 35U.S.C. § 119 (e), the application requires to be filed on February 12nd, 2003, be entitled as the U.S. Provisional Patent Application 60/446786 of " electric mechanical switch of the nanofabric articles of use arranged vertical and memory cell and preparation method thereof " (Electro-Mechanical Switches and Memory Cells UsingVertically-Disposed Nanofabric Articles and Methods of Making the Same) and be filed on February 12nd, 2003, the priority that is entitled as the U.S. Provisional Patent Application 60/446783 of " electric mechanical switch of the nanofabric articles that usage level is arranged and memory cell and preparation method thereof " (Electro-Mechanical Switches and Memory Cells UsingHorizontally-Disposed Nanofabric Articles and Methods of Making theSame), its full content draws and is reference with reference to being incorporated into this.

According to 35U.S.C. § 120, the application is the further part of following application, and requires the priority of following application, and the complete content of these applications is with reference to being incorporated into this:

U.S. Patent application 09/915093, be filed in July 25 calendar year 2001, be entitled as " using dynamo-electric storage array of nanometer pipe racks and preparation method thereof " (Electromechanical Memory Array UsingNanotube Ribbons and Methods for Making the Same);

U.S. Patent application 10/033323 is filed in December 28 calendar year 2001, is entitled as " dynamo-electric three trace interface units " (Electromechanical Three-Trace Junction Devices);

U.S. Patent application 10/128118 is filed on April 23rd, 2002, is entitled as " nano-tube film and goods " (Nanotube Films and Articles);

U.S. Patent application 10/341005, be filed on January 13rd, 2003, be entitled as " methods of film, layer, fabric, band, element and the goods of preparation CNT " (Methods of Making CarbonNanotube Films, Layers, Fabrics, Ribbons, Elements and Articles).

Technical field

The application relates to device that contains the non-horizontal nanofabric articles of arranged vertical and other and preparation method thereof.

Background technology

Someone proposes a kind of like this memory device, and it uses nano wire, forms to intersect as SWCN and ties, as memory cell.[see WO01/03208, " based on the device of nano wire, array and preparation method thereof "; Thomas Rueckes etc., " the nonvolatile RAM that is used for molecular computing " (Carbon Nanotube-Based Nonvolatile Random Access Memory forMolecular Computing) based on CNT, Science, vol.289,7, on July of pp.94-97,2000].After this, these devices are called nanometer pipeline interleaved storage (NTWCM).According to these ideas, be suspended at other single single wall nano pipelines above line and just constituted memory cell.The signal of telecommunication is write on one or two lines, make they each other physics inhale mutually or repel each other.Every kind of physical state (promptly inhaling mutually or the line that repels each other) is corresponding to a kind of electrical state.The line that repels each other is the open electric circuit knot, and inhaling line mutually is closure state, forms rectifying junction.If remove power supply from knot, line keeps its physics (thereby electricity) state, then can form non-volatile memory cells.

The idea of NTWCN depends on oriented growth or chemical self-assembling technique, the required nanotube one by one of growth memory cell.Now, it is believed that these technology are difficult to be put to commercial the application with modern technologies.And they may be subjected to inherent limitations, as utilize the limited length of the nanotube of the reliable growth of these technology, and it is also relatively more difficult to control the statistical variance of nanometer pipeline on geometry that grows out like this.Thereby needs improve the structure of memory.

Having one in the content that U.S. Patent bulletin 2003-0021966 is introduced is electromechanical circuits, and as memory cell, wherein circuit comprises a kind of like this structure, the carrier that it has conductive trace and extends out from substrate surface.The nanometer pipe racks is suspended on the carrier, and described carrier passes conductive trace.Every band comprises one or more nanotube.Described band forms by removing material from the entangled fabric of one deck nanotube or nanotube selectively.

For example, as described in US patent application publication 2003-0021966, nano-fabric can form band, and described band can be used as the assembly of setting up non-volatile dynamo-electric memory cell.Dynamo-electric deflection can take place in described band under the electricity of control trace and/or band stimulates.The deflection physics attitude of band can be represented corresponding information attitude.Deflection physics attitude has non-volatile, means that band keeps its physics (that is information) state, even removed the power supply on the memory cell.As described in US patent application publication 2003-0124325, three trace structures can be used for dynamo-electric memory, wherein two electrodes that trace is a control band deflection.

Summary of the invention

The invention provides new device of the nanofabric articles that contains arranged vertical and preparation method thereof.

Aspect some, electromechanical device has such structure of the present invention, the raceway groove that it contains main horizontal surface and forms therein.Conductive trace is arranged in raceway groove; Nanotube articles vertically is suspended in the raceway groove, is separated by with the upstanding wall of raceway groove.Dynamo-electric deflection can take place in described goods, and level is pointed to conductive trace.

In another aspect of the present invention, the degree that vertically suspends of nanotube articles is determined by thin film preparation process.

In another aspect of the present invention, the vertically degree of suspending of nanotube articles is about 50nm or following.

In another aspect of the present invention, nanotube articles is by the conductive material clamping between the porous air between some nanotube of nanotube articles.

In another aspect of this invention, nanotube articles is formed by the porous nano fabric.

In another aspect of this invention, dynamo-electric deflection can take place in nanotube articles, contacts with conductive trace, and described contact is volatibility attitude or non-volatile condition, depends on device architecture.

In another aspect of this invention, vertical orientated device can form three multi-form trace devices.

In another aspect of this invention, raceway groove can be used for a plurality of independent devices, perhaps is used for some devices of a shared electrode.

Description of drawings

Figure 1A-B is the perspective view and the sectional view of exemplary electric mechanical switch;

Fig. 2 A-B is the sectional view of some embodiment device of the present invention;

Fig. 3 A-4C is the sectional view of some embodiment three trace device of the present invention;

Fig. 5 A-L is depicted as the method example for preparing some embodiment device of the present invention;

Fig. 6-the 10th, other various embodiment sectional views of the present invention;

Figure 11 A-B is the sectional view of exemplary electromechanical device;

Figure 12 and 13 is the micrographs that can fit in the nano-fabric of non-smooth surface;

Figure 14 is the perspective view of exemplary nano fabric.

The specific embodiment

Preferred implementation of the present invention provides the novel product that contains non-horizontal nanotube articles, and their preparation method is provided.Some embodiment provides clamping the improving one's methods of nanotube articles that suspend, to improve its performance and productibility.Other embodiments provide dynamo-electric memory cell, and these unit can be independently, also can be Embedded.In some embodiments, individual memory cells is connected with other circuit or unit with new method, has reduced the resistance of the trace that leads to memory cell.Also has some embodiments to provide to have the volatile information state memory cell of (losing information state when being deenergization).Some other embodiment adopts the three trace structures similar with US patent application publication 2003-0124325, and promptly nanofabric articles can be placed between two electrodes, makes the goods deflection or deviates from an electrode or another electrode.These embodiments volatibility and non-volatile nature utilized capable of being combined; For example, information state can be non-volatile, but device can adopt three trace structures, and wherein the deflection of nanotube articles can be caused by the trace with volatibility step response.

Studies show that, can fit in substrate surface basically by growing or applying the nano-fabric of pipeline generation one by one or be with, as the semiconductor substrate surface.Such as electric mechanical switch and the such device of memory cell, this nano-fabric can adapt to the surface (being that nano-fabric is perpendicular to horizontal substrate) that is substantially perpendicular to semiconductor substrate to preferred implementation of the present invention with the nano-fabric preparation.To introduce the device of this arranged vertical below and develop this preparation of devices technology, and comprise forming switch and memory cell, the nanofabric articles span that wherein vertically suspends is shorter, the corresponding reduction of clearance height.In some embodiments, device size that this technology permission employing is littler and lower resistance (and corresponding shorter circulation timei and faster speed, for example performance is up to 100GHz or higher).So just can production volatibility and non-volatile switch, and the device of many types, the example will be illustrated in the back.In some preferred implementation, described goods are essentially single-layer carbon nano-tube.

Figure 1A-B is the perspective view and the sectional view of exemplary electric mechanical switch.Structure 100 (Fig. 1 (A)) expression " closing " state, and structure 110 (Fig. 1 (B)) expression " open-minded " state.Title " is opened " and " pass " is artificial definite in some sense, and their still have generality after exchanging.In this embodiment, described structure comprises across the nanofabric articles 102 between last insulating supporting structure 104 and the following insulating supporting structure 106.Be electrode 108 between the insulating supporting structure 104 and 106 up and down.

Notice that nano-fabric generally includes any suitable construction or goods that contain nanotube as nanofabric articles 102, comprises the band and the nano-fabric electrode that contain nanotube specifically.

In some preferred implementation, nanofabric articles 102 has the span T that is shorter than about 108nm, is fixed on insulating supporting structure 104 and 106 (can see clearlyer in Fig. 5 L).The span of nano-fabric depends on used deposition technique, and in some embodiments, the span that suspends can be shorter than the span that obtains by lithography technique.It is smaller that the present inventor envisions vertical span, perhaps less than 30nm.Fixedly the details of nanofabric articles will be introduced below, also can be referring to drawing list of references.Electrode 108 can form any suitable shape by any suitable conductive material preparation.Some preferred implementation utilizes n type doped silicon to form this conducting element, can be wider than but better is not wider than nanofabric articles, for example about 108nm or following.Other embodiments use metal as conductor.In some embodiments, electrode 108 can be made by nano-fabric equally.

Similarly, insulating supporting structure 104 and 106 can be by various material preparations, and can form different shape, but some preferred implementation adopts such as spin-coating glass (SOG) or silicon nitride or the such material of silica.

As will be explained below, in some embodiments, nanofabric articles 102 remains on the insulating supporting structure by frictional force as shown in the figure.In other embodiments, nanofabric articles 102 can be fixed by other modes, as grappling, pin seam, perhaps with various technology nano-fabric is fixed on the insulating supporting structure.

Particularly, can add matrix material in the space between the nanotube in the porous nano fabric, form the conduction composite junction, thereby nanofabric articles 102 is connected on the another kind of material, as described in above-cited list of references.Adopt this composite junction and joint to have certain advantage in electricity and mechanical aspects.In an example, conductive material is deposited on the nano-fabric, make it to infiltrate the space of porous nano fabric, thereby form the electric connection that is improved that links to each other with nano-fabric, reduced the contact resistance in the goods.In another example, insulating materials is deposited on the nano-fabric, make it to infiltrate the space of porous nano fabric, thereby form the mechanical fixation joint that is improved, can improve reliability and productibility.

Can adopt the method for evaporation or spin coating to increase constant intensity, material therefor such as metal, semiconductor or insulator, particularly silicon, titanium, silica or formamide.Can increase rubbing action by chemical interaction, comprise and utilize carbon compound, as the covalent bonding effect of pyrene or other chemical reactivity materials.Example technique for and coating nanometer pipe fixing by metal, can be referring to R.J.Chen etc. " the non-covalent sidewall of SWCN that is used for fixing protein is functionalized " (Noncovalentn SidewallFunctionalization of Single-Walled Carbon Nanotubes for ProteinImmobilization), J.Am.Chem.Soc., vol.123, p.p.3838-39 (2001), with Dai etc., Appl.Phys.Lett., vol.77, p.p.3015-17 (2000).For these technology, also can be referring to WO 01/03208.

In some embodiments, nanofabric articles 102 separates and intersects with it with the corresponding electrode that is positioned at another side, and the crosspoint just forms memory cell or logical block, switch or relay.More than one memory cell can be used by array format, perhaps uses as single interconnection box or interconnection box group, specifically depends on application, as embedded memory, twin-core sheet memory device, relay or actuator.The actual number of this unit does not have substantial effect for understanding the present invention, but but this technology support information storage capacity device on the order of magnitude of modern non-volatile circuitry device at least.

Fig. 2 A-4C is the sectional view of single nanotube switch, has shown the various states of device.

Fig. 2 A-B has shown that nanofabric articles 102 respectively and have two nanotube switches of different gap distance 202 and 208 between electrode 204 and 210.In a preferred embodiment, the perpendicular separation between the insulating supporting structure 104 and 106 is less than 180nm; This highly depends on used deposition technique.The span of fabric is 180nm if suspend in the switch, and then to be insulating supporting structure 104 tops be connected between the deflection position on the electrode 204 to nanofabric articles 102 relative spacing, and clearance distance 202 is about 5-50nm.In the less switch of span, the gap is also corresponding less.The size of clearance distance 202 will adapt with the electric mechanical switch ability of memory or other electronic application.In employing some embodiment by the nano-fabric 102 of made of carbon nanotubes, clearance distance is preferably 5-50nm, and concrete influencing each other between the strain energy of reflection deflection nanotube and the cohesive energy.Other materials may be fit to other clearance distances.Switching between these states for example applies specific voltage between 204 and 210 and realizes by at nanofabric articles 102 electrodes one or more with it.Switching power depends on nanofabric articles 102 and electrode, and for example electrostatic attraction between 204 and 210 and repulsion interact.

By selecting clearance distance 202, make strain energy less than cohesive energy, nanofabric articles 102 can keep permanent " non-volatile " to contact with electrode 204.If select bigger clearance distance 208, strain energy will be increased to such degree, make nanofabric articles 102 contact with electrode 210, but can't keep this contact when not importing extra force, thereby form " volatibility " state.The preferred this volatibility switch of some embodiment, they can be used in combination with non-volatile switch as required, produce specific electronic device.

The size that provides above is exemplary, does not constitute any limitation, and is changeable in some embodiments, specifically depends on to use and used material and technology.The length of nanofabric articles 102 is compared with the nanofabric articles of other types in the goods of above-mentioned and other arranged vertical, can be very short.In some cases, can adopt thin film technique, as thin film deposition or etching, rather than lithography technique forms electrode and the nano-fabric band separated in order to suspend gap.In some embodiments, the length that suspends can be less than the length of used nano-fabric in the horizontal device, as be entitled as the list of references of " electric mechanical switch of the nanofabric articles that usage level is arranged and memory cell and preparation method thereof " (Electro-Mechanical Switches andMemory Cells Using Horizontally-Disposed Nanofabric Articles andMethods of Making the Same) (U.S. Provisional Patent Application 60/446783 is filed on February 12nd, 2003) and be filed on the same day but still the U. S. application of unallocated sequence number is described.Device depends on thin film deposition rather than lithographic printing makes production be more prone to.

The nano-fabric span improves reliability than I, and switch speed sharply is increased to 200GHz, reduces clearance height simultaneously.In addition, the nano-fabric span is less can also reduce electric current and flow through nano-fabric time the suffered resistance.Other following embodiments will illustrate arranged vertical goods of other types and preparation method thereof.

Fig. 3 A-C is depicted as two kinds of possible " open-minded " states in some embodiment of the present invention.When device shown in 302 when (Fig. 3 A, structure 300), nanofabric articles 102 and electrode 304 and 306 are all at a distance of 202.This state can carry out electrical detection with the described any method of aforementioned reference.In this structure, " disconnection " state is in open circuit corresponding to nano-fabric-electrode knot, and this state can detect on nanofabric articles 102 or electrode 304 when addressing.When the unit shown in 308 when (Fig. 3 B, structure 310), nanofabric articles 102 deviating electrodes 304.In some embodiments, tying corresponding to the nano-fabric-electrode of " open-minded " state is conduction rectifying junction (for example Xiao Te knot or PN junction), can detect on nanofabric articles 102 or electrode 306 during addressing.When the unit shown in 312 when (Fig. 3 C, structure 314), nanofabric articles 102 deviating electrodes 306 produce " open-minded " state.These figure draw in proportion, and for example two distances 202 not necessarily equate.In addition, in these electrodes one or another can be used as " fixing " electrode and use separately or be used in combination with another electrode, make nanotube articles be partial to and contact with an electrode, another electrode then can be used as " can break away from " electrode and uses separately or be used in combination with another electrode, and nanotube articles and electrode are disengaged.

Fig. 4 A-C is depicted as the some other possible three-state or the figure of three trace devices.First three traces device 400 (Fig. 4 A) has two non-volatile " open-minded " states.Distance 202 between non-deflection nanofabric articles 102 and any one electrode 402 or 404 is enough little, can contact with electrode 402 or 404 after the nanofabric articles deflection.In this embodiment, formed stable model ylid bloom action, produced deflection nanofabric articles 102 and the non volatile state that any one electrode contacts, made closing of circuit, and kept contact indefinite duration, and need not extra strength with electrode.

Second three trace device 406 (Fig. 4 B) allows nano-fabric to take place non-volatile or the volatibility deflection.If nanofabric articles 102 deviating electrodes 410, then distance 202 is enough little, produces above-mentioned non volatile state.But, if nanofabric articles 102 deviating electrodes 408, then the clearance distance 208 between nanofabric articles 102 and the contact electrode 408 is bigger, and the strain energy of the nanofabric articles 102 of elongation has overcome the model ylid bloom action between nanofabric articles 102 and the electrode 408; Nanofabric articles 102 only constitutes the part of closed circuit, produces interim " open-minded " state, can be returned to the open-circuit condition of its non-deflection, produces " disconnection " state.

Comparative structure 400 and 406, the former can be used as non-volatile switch, and the latter comprises the volatibility switch relevant with gap 208.In structure 406, the clearance distance 208 between nano-fabric and the electrode 408 is bigger, and the strain energy of the nano-fabric of elongation has overcome the Van der Waals force between fabric and the electrode.Nano-fabric constitutes the part of closed circuit, and is returned to the open-circuit condition of its non-deflection.The effect that should be pointed out that the model ylid bloom action between nano-fabric and other elements can be affected on its interface.This effect can be strengthened or be weakened; For example, by weakening gravitation at electrode surface coating skim oxide or other suitable materials.The purpose that weakens gravitation is to produce the volatibility nanotube switch; This volatibility switch is specially adapted to relay, sensor, transistor etc.

Structure 412 (Fig. 4 C) shows the third three traces device, and wherein the clearance distance 208 between nanofabric articles 102 and electrode 414 and 416 is all enough big, can form above-mentioned volatibility nanotube switch.

In comprising some embodiment of non-volatile cell, the resistance ratio between " disconnection " and " open-minded " state is very high.Resistance difference between " disconnection " and " open-minded " state provides approach for which kind of state the identification knot is in.In one approach, on nano-fabric or electrode, apply " reading " electric current, on electrode, measure the voltage that passes through knot with " sensor amplifier ".If reading is not destructive, show that then the unit keeps its state, do not need the such write back operations of semiconductor DRAM.Hint that as top three traces in preferred implementation knot has they self advantage.By using ternary memory cell, more information can be stored or represent in a given unit.In addition, even only use " open-minded " state, three traces knot also can improve switch speed, because it can work in coordination with the application of force by enough two conductive traces, moves response nano fabric 102 by electromechanical means.

Except other advantages, structure shown in Fig. 3 and 4 (generally speaking) helps encapsulation and carries, and also easier other circuit and the system inserted in nanotube technology unit is as combination circuit.But the up rightness of electricity structure also helps the production and the various simplification that are connected of stacked memory layer.The nanotube segment better is clipped on the nanofabric articles that partly suspends (top and following).In addition, nanofabric articles should be connected on the high conduction signal path.

One aspect of the present invention relates to conducts electricity the formation of composite junction, and wherein suitable matrix material can place nanotube or nano-fabric fiber or other porous nanometer materials around neutralization.This knot can provide required machinery and/or electrical properties.For example, can strengthen electrically contacting between nano-fabric and metal joint or the activation point, perhaps reduce contact resistance by the matrix material that metal joint is used as chimeric nano-fabric pipe.In addition, the increase that contacts between nanotube and the matrix material can promote the machinery contact, increases stress.

Sectional view 5A-L shows the illustrative methods of the nano-electromechanical switch of production perpendicular generally." vertically " is meant that switch element is substantially perpendicular to the first type surface of base material.This point will be set forth below in detail.Conformal nanotube and/or this device of nano-fabric material preparation have certain advantage.The length that result is exactly a nanofabric articles can reduce about two orders of magnitude in some embodiments.In addition, when the length of goods reduced as mentioned above, the resistance of current-carrying nanofabric articles also greatly reduced.

In Fig. 5 A, semiconductor substrate 501 is provided, scribble insulating barrier 502 above it, as silica or silicon nitride.The thickness of insulating barrier 502 is preferably several nanometers, but also can reach 1 μ m, depends on the electrical properties that different application is required.The second layer 504 is deposited on the insulating barrier 502.Two non-limitative examples of the material of the preparation second layer 504 are metal and semiconductor; The second layer has top surface 506.Hole 507 is arranged in the second layer 504.Hole 507 can form by carry out reactive ion etching in the second layer 504; Hole 507 is made of the top surface 510 that exposes of inwall 508 and insulating barrier 502.In some embodiments, the part of the second layer 504 keeps 507 bottoms, hole to have electric conductivity.Perhaps, can provide insulating barrier 502 on top surface 506, the etching top surface forms the hole.Hole 507 can be made the part of groove or through hole in advance, and as the part of preprocessing step, for example conduct forms the part of the overall plan of electronic device.

First insulating barrier 512 that Fig. 5 B be shown with is formed by silicon nitride or other materials, these materials are deposited on and expose on top surface 510 and the top surface 506, form the top layer 514 of intermediate structure 516.According to a kind of embodiment, first insulating barrier 512 can etching in addition selectively on polysilicon, nanotube and silica or other selected insulators.First insulating barrier 512 can be used as sacrifice layer, forms the gap below between each layer.When the thickness of insulating barrier 512 is introduced intermediate structure 516 below within the described scope.

Fig. 5 C is shown with the individual layer nano-fabric 518 that is added on the intermediate layer 516, forms intermediate structure 520.Nano-fabric 518 can suspend and applies in the nanotube solution by nanotube suspend chemical vapour deposition (CVD), spin coating or the immersion of liquid of liquid, aerosolized nanotube that suspend.

Nano-fabric layer 518 adapts to end insulating barrier 512, meets the shape in hole 507 basically.The example of nanofabric articles and preparation thereof and using method is seen above-mentioned list of references.The structure 520 that obtains like this comprises two vertical component 518a of nano-fabric 518, and it is perpendicular to the first type surface of base material 501.With the device that these vertical components that are arranged essentially parallel to raceway groove 507 sidewalls 508 form, for example nanotube switch is called " vertically " device or switch.

Fig. 5 D is shown with second insulating barrier 522 that is applied on the nano-fabric 508.Insulating protective layer 524 is deposited on second insulating barrier 522 with top surface 526, forms intermediate structure 528.Insulating protective layer 524 is not deposited on the sidewall of raceway groove.For instance, the thickness of insulating protective layer 524 can be for about 100nm.Coating insulating protective layer 524, for example the non-limitative example of the method for oxide skin(coating) is sputter or high density plasma deposition silica.Optimum thickness depends on concrete application, to protect insulating barrier each layer below 524 to exempt from etching or deposition.

Fig. 5 E is shown with the polysilicon layer 530 that is deposited on intermediate structure 528 top surfaces 526, and it has filled in the hole 507 space between two walls 508.The height of polysilicon layer 530 depositions can exceed top surface 526, so that introduce an amount of polysilicon layer in hole 507, produces the state of overfill in intermediate structure 532.Subsequently polysilicon layer 530 is carried out the planarization operation, obtain etched polysilicon 534, contain the top surface 526 of oxide layer 524, shown in intermediate structure 536 (Fig. 5 F).

Useful suitable method etches into the polysilicon layer 534 of first degree of depth 538 shown in Fig. 5 G.The illustrative methods that produces this degree of depth is reactive ion etching (RIE), shown in intermediate structure 540; First degree of depth 538 help afterwards to determine the to suspend edge of nano-fabric fragment.The thickness 541 of etching polysilicon layer 534 depends on groove ID 509; For example, the described degree of depth can be within 200nm-1 mu m range, and for the application that needs the ultrahigh speed electric mechanical switch, the degree of depth should be less than 200nm.This degree of depth can be dwindled with film preparing technology, mentions in other places and institute's quoted passage are offered as this specification.

Fig. 5 H is shown with the oxide skin(coating) 542 that is deposited on intermediate structure 540 exposed surfaces.The horizontal component 544 covering groove walls of oxide skin(coating), vertical oxide layer 546 covers the top surface that exposes of polysilicon layer 534.Methods such as horizontal oxide skin(coating) 544 usefulness oxide-isolated etchings are removed, and stay intermediate structure 550 (Fig. 5 I).

Fig. 5 J is shown with the polysilicon layer 534 that etches into second degree of depth 552.Second degree of depth 552 is approximately than first degree of depth, 534 dark 50nm.Formed gap 554 allows the subregion of second insulating barrier 522 expose, shown in intermediate structure 556.

Because preferred nano-fabric has permeability or permeability, the subregion 512A of first insulating barrier 512 below the nanotube fabric 518A can remove by wet etching etc.As for the method for below porous fabric, removing material, did in the patent documentation that the applicant has mentioned in the above to introduce.After removing first insulating barrier 512 and second insulating barrier 522 with suitable wet etching condition, stay the nano-fabric 558 that suspends, shown in intermediate structure 562 (Fig. 5 K) with vertical height 560.Wet etching may stay the residue of stretching, because the wet etching condition has anisotropic characteristics.Can adopt other technologies such as dry etching, carry out isotropic etch step.

Vertical height 560 is determined by etching process.Be about 20nm for vertical height 560, the first insulating barriers 512 of 200nm and the thickness of second insulating barrier 522, so that clearance distance to be provided, thereby produce two kinds of non volatile states.Some embodiment of the present invention should adopt less down suction, and for example clearance height is 30nm.

Electrode material 566 is deposited in the groove 507, at the electrode material 566 and the leaving gap 568 between the nano-tube material 558 that suspends, shown in intermediate structure 570 (Fig. 5 L).

Structure 570 contains a pair of nano-fabric part 572 that vertically suspends, and is down suction 574,576 around them.This structure can be used as the basis of a pair of bifurcation or tri-state switch device, will lay down a definition below.The behavior of switching device be subjected to suspending the strain in the nano-fabric part and the influence of clearance distance are on every side discussed as this specification.Equally, can obtain many structures, comprise ordinary electrode (for example 566) structure with structure 570.Structure 570 can be divided into (about) two independent parts, for example, vertical line of demarcation is vertically by electrode 566, but forms the bifurcation or the tri-state switch of two independent operations.

In above-mentioned and other embodiment, the character of obtained device and switch depends on the structure and the arrangement of electrode and joint, and other factors.Please note the structure of various types of electrodes in the following embodiment, they shown the spirit in design and design of these devices reactive with and the diversity of potential application.For example, some device common electrode (for example two nano-fabric switch elements are subjected to the influence of same common electrode) between more than one nanofabric articles.Other devices have absolute electrode, are controlling the performance of nano-fabric.Each nanofabric articles can be controlled goods with one or more electrodes, be entitled as " dynamo-electric three trace junction devices " (Electromechanical Three-Trace Junction Devices as what quote, U.S. Patent application 10/033323 is filed in December 28 calendar year 2001) document mention.

If vertical height 560 is 200nm, the thickness of first insulating barrier 512 and second insulating barrier 522 is increased to about 50nm, the nanotube switch of some type of device can become the volatibility switch under the bias voltage of necessity, because the strain energy of the nano-fabric of deflection is higher than the Van der Waals force that fabric is contacted with metal area 504 or electrode 566.The thickness of first insulating barrier 512 and second insulating barrier 522 can be adjusted, and is for given down suction 560 produces non-volatile or volatibility state, needed by the application-specific with required electrology characteristic.

The cross section Figure 6 shows that the exemplary configurations with metal layer in succession.This structure comprises and nano-fabric 518 electrodes in contact joints 602 and through hole 604, and from around and below the wrapping machine electric switch adjoin metal level 504, shown in intermediate structure 600.

The cross section Figure 7 shows that the exemplary configurations with metal layer in succession.This structure is similar to intermediate structure 600 aspect several.But insulating barrier 702 separates metal level 504 each several parts, so metal level 504 do not surround the electricapparatus switch element, has avoided intermediate structure 600 such crosstalking.

The cross section Figure 8 shows that the exemplary configurations with metal layer in succession.This structure is similar to structure 700.But nano-fabric layer 518 is not continuous, but has disconnected in the bottom, therefore has two independently switches 802 and 804, does not crosstalk between them, shown in intermediate structure 800.

The cross section Figure 9 shows that the exemplary configurations with metal layer in succession.This structure is similar to intermediate structure 800; But it has two to be insulated layer 906 contre electrode that is separated 902 and 904, rather than single contre electrode.Therefore, intermediate structure 900 has two nano-electromechanical switches, but their independent operations.

The cross section Figure 10 shows that the exemplary configurations with metal layer in succession.This structure is similar to intermediate structure 800 and 900, and difference is that it does not just have contre electrode at all.In this embodiment, the nano-fabric switch can contact with metal level 504, forms volatibility or non-volatile switch, and described switch also can contact with each other, and forms volatibility or non-volatile switch.

Device that the embodiment of front is introduced and goods have been illustrative purposes, and other technologies also can be used to form same device or equivalent.In addition, described goods can be with the replacement of the material of other types in other embodiments and shape.For example, some embodiment of the present invention can replace metal electrode with nanotube.In fact, replace the device of above-mentioned electrode can be prepared equally with nanotube and nanofabric articles.

In some embodiments, better adopt this nano-fabric electrode as the joint of transistor part or as transistorized component part, perhaps contact or as the part of joint with the joint of the sense amplifier of back or addressing logic, for example can be referring to the United States Patent (USP) 10/379973 that is entitled as " combination circuit that contains the dynamo-electric memory of nanotube " (Hybrid Circuit Having Nanotube Electromechanical Memory).

The increase electrode can be switch prepared in this specification or device provides extra control.For example, Fig. 6 comprises two absolute electrodes, vertical nano-fabric each several part can be pushed away and/or moves to together.Overlap under the given parameter one, clearance distance will determine that described device is a volatibility or non-volatile.

Fig. 7 comprises 3 absolute electrodes, for device provides the extra free degree (extra rich, extra information storage capacity etc.).Fig. 8 also comprises 3 electrodes.

Fig. 9 comprises 4 absolute electrodes, because separator 906 has been divided into two electrodes (902 and 904) with contre electrode.

Figure 10 comprises two electrodes on the raceway groove both sides, and uses the nano-fabric part that links to each other with top electrodes 602 the 3rd electrode as structure 1000.

As previously mentioned, when adopting the nanofabric articles of arranged vertical, the size that obtains with thin film technique is less than the size that obtains of technology offscreen in the horizontal nanofabric articles.For example, get back to Figure 1A, the thickness of the size T of the span of suspended nanofabric or electrode 108 is little of some nanometers (for example 10-100nm), and form with thin film technique.Along with the development of this respect technology, thickness T can be less than 10nm.Therefore, described size is along with the proportional decline of thin film technique, rather than along with the proportional decline of lithography technique.Should be pointed out that also corresponding the reducing of the clearance distance that nanofabric articles adopted of contraction in length.

Figure 11 A-B is depicted as the embodiment that the present invention has oxidizing electrode.Structure 1110 has the switch based on nano-fabric, and this switch has an insulating barrier 1112 on the exposed surface of an electrode 108.(formation of this oxidizing electrode will be described in detail below.) insulating barrier 1112 can be used to change switching characteristic into the volatibility state, perhaps further provide safeguard for desired properties.Figure 11 B is depicted as the structure with two comparative electrodes, and the nano-fabric switch is between these two electrodes.Be placed on an insulating barrier on the comparative electrode front surface and can be used to prevent that the different fibers in the nano-fabric element from electrically contacting with two electrodes (304,306) in the state transition period simultaneously.This contact can prevent or hinder the switching of fabric between two states.

Figure 12 and 13 is micrographs of exemplary conformal nano-fabric.Appearance after fabric forms as can be seen from these figure and be fitted in appearance on vertical and the horizontal surface.

Preferred implementation prepares with film, layer or the supatex fabric of nanotube, thereby they can form various useful pattern assemblies, element or goods.(" film ", " layer " or " supatex fabric " general designation are made " fabric " or " nano-fabric " here.) assembly that formed by nano-fabric keeps forming the required physical property of their nanotube and/or nano-fabric.In addition, preferred implementation allows to adopt modern technology of preparing (for example used technology in the semiconductor production), and utilizes nanofabric articles and device.

Preferred implementation of the present invention is included in goods and the method that increases strain in the nano-fabric, and volatibility and non-volatile electric mechanical switch have optional structure, comprises the ternary or three trace switches with volatibility and non volatile state.Nano-fabric in some embodiment also provides independently modular goods, as memory cell.

Figure 14 is the perspective view of exemplary nano pipe fabric.As we can see from the figure, fabric can have highly porous property, looks it is several wire, and is between the line gapped.In this figure, in fact several nano-fabric bands are arranged, from left to right, there is not the zone of nanotube to separate each other.Can notice that fabric shown in Figure 13 is highly porous property equally, some nanotubes be arranged on raceway groove and contact electrode.In two width of cloth figure, the resolution ratio of figure is influenced by imaging technique, so more straight nanotube does not focus on good or do not see.

It is also understood that scope of the present invention is not limited to above-mentioned embodiment, but determine that as claim these contain version and the improved form of stating embodiment as claim by appended.

Claims (30)

1. nanometer tube device comprises:

The base material of basic horizontal, described base material has vertical orientated feature; And

Nano-tube film, described film are fitted with the horizontal surface of base material basically, also fit with vertical orientated feature at least simultaneously.

2. device as claimed in claim 1 is characterized in that described nano-tube film mainly comprises monolayer nanotube.

3. device as claimed in claim 1 is characterized in that described nano-tube film comprises single-walled nanotube.

4. device as claimed in claim 1 is characterized in that described nano-tube film is electrically connected with high conduction signal path.

5. device as claimed in claim 1, what it is characterized in that described base material vertical orientatedly is characterized as 50 nanometers or less than 50 nanometers.

6. nanotube switch device comprises:

The structure of the raceway groove that has horizontal first type surface and form therein, described raceway groove has the vertical wall and first and second electrodes, the part of the described vertical wall of described each self-forming of first and second electrodes;

Be vertically set on the nanotube articles in the raceway groove, described nanotube articles contacts with described first and second electrodes, and described nanotube articles response electro photoluminescence forms and do not form conductive channel between described first and second electrodes.

7. nanotube switch device as claimed in claim 6 is characterized in that forming and does not form conductive channel corresponding to first and second resistance states of the conversion between first and second electrodes.

8. nanotube switch device as claimed in claim 6 is characterized in that described nanotube articles comprises the part of nanotube fabric.

9. nanotube switch device as claimed in claim 8 is characterized in that described nanotube fabric conformally is arranged on the vertical wall of described raceway groove.

10. nanotube switch device as claimed in claim 6 is characterized in that described first electrode comprises the conductive material that is arranged in the raceway groove and forms the raceway groove basal surface.

11. nanotube switch device as claimed in claim 10 is characterized in that described second electrode comprises the conductive material on the top that forms vertical wall.

12. nanotube switch device as claimed in claim 11 is characterized in that described structure comprises a kind of insulating materials, described insulation material layer is between first electrode and second electrode.

13. nanotube switch device as claimed in claim 6 is characterized in that described nanotube articles forms and do not form conductive channel non-volatilely.

14. nanotube switch device as claimed in claim 6 is characterized in that described vertically disposed nanotube articles comprises to be arranged on second electrode and by the fixing standing part of insulating barrier.

15. a storage array comprises a plurality of nanotube switch devices, each device comprises:

Structure with vertical wall and first and second electrodes, the part of described each self-forming vertical wall of first and second electrodes;

Vertically disposed nanotube articles, described nanotube articles contacts with described first and second electrodes, and described nanotube articles response electro photoluminescence forms and does not form conductive channel between described first and second electrodes;

Having two nanotube switch devices at least in described a plurality of nanotube switch is vertical stackings.

16. storage array as claimed in claim 15 is characterized in that formation and does not form conductive channel corresponding to conversion first and second resistance states between first and second electrodes.

17. storage array as claimed in claim 15 is characterized in that described nanotube articles comprises the part of nanotube fabric.

18. storage array as claimed in claim 17 is characterized in that described nanotube fabric conformally is arranged on the vertical wall of described structure.

19. storage array as claimed in claim 15 is characterized in that described nanotube articles volatibility ground forms and do not form conductive channel.

20. storage array as claimed in claim 15 is characterized in that described nanotube articles forms and do not form conductive channel non-volatilely.

21. storage array as claimed in claim 20, it is characterized in that also comprising the testing circuit that is electrically connected with first and second electrodes of each nanometer tube device, be used to detect the resistance states between first and second electrodes, described resistance states is the not interference of the testing circuit of examined resistance states basically.

22. storage array as claimed in claim 15 is characterized in that the nanotube switch device at least two stacked vertical, in shared described first and second electrodes of the described first nanotube switch device and the second nanotube switch device one.

23. storage array as claimed in claim 15 is characterized in that for each nanotube switch device, described first electrode comprises layer of conductive material, described conductive material has the surface that forms the vertical wall bottom.

24. storage array as claimed in claim 23 is characterized in that described second electrode comprises layer of conductive material, described conductive material has the surface that forms vertical wall top.

25. storage array as claimed in claim 24 is characterized in that described structure comprises a kind of insulating materials, described insulation material layer is between first electrode and second electrode.

26. storage array as claimed in claim 25 is characterized in that described nanotube articles is printed on the upper surface of the upper surface of second electrode, vertical wall and first electrode.

27. storage array as claimed in claim 25, it is characterized in that described nanotube articles conformally is arranged on the surface of described insulating barrier, the nanotube articles part that contacts with insulating barrier is changed between first and second resistance states, forms and do not form conductive channel.

28. a nanotube switch device comprises:

Base material with first type surface, described first type surface limits horizontal alignment;

Nanotube articles with a plurality of nanotubes, described goods perpendicular orientation, the described goods and first and second electrodes electrically contact at any end of described goods, and described goods can be changed between two kinds of information states.

29. nanotube switch device as claimed in claim 28 is characterized in that described first electrode comprises the bottom electrode that is arranged on the described base material, described second electrode comprises the top electrodes on the upper surface that is arranged on described nanotube articles.

30. nanotube switch device as claimed in claim 28 is characterized in that described nanotube articles comprises a plurality of non-woven nanotubes, provides many conductive channels between first and second electrodes.

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