CN101471419B - Film type thermoelectric conversion component, device and stacking component thereof - Google Patents
Film type thermoelectric conversion component, device and stacking component thereof Download PDFInfo
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- CN101471419B CN101471419B CN2007103081316A CN200710308131A CN101471419B CN 101471419 B CN101471419 B CN 101471419B CN 2007103081316 A CN2007103081316 A CN 2007103081316A CN 200710308131 A CN200710308131 A CN 200710308131A CN 101471419 B CN101471419 B CN 101471419B
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Abstract
The invention relates to a film-type thermoelectric conversion assembly, which comprises at least one annular insulating substrate and a plurality group of thermoelectric film materials. The annular insulating substrate includes an annular inner edge, an annular outer edge and a first surface. The plurality group of thermoelectric film materials are formed on and electrically connected with the first surface of the annular insulating substrate, wherein each thermoelectric film material group includes a P-type thermoelectric film and an N-type thermoelectric film electrically connected with each other; and the N-type thermoelectric film of each thermoelectric film group is electrically connected with the P-type thermoelectric film of the neighboring thermoelectric film group. When a current sequentially passes through the thermoelectric film material groups in the direction parallel to the P-type thermoelectric films and the N-type thermoelectric films, a temperature difference is generated between the annular inner edge and the annular outer edge of the annular insulating substrate.
Description
Technical field
The present invention relates to a kind of diaphragm type thermoelectric converting component and stack assemblies thereof, and particularly about a kind of diaphragm type thermoelectric converting component and stack assemblies thereof that after application, can have high thermoelectric conversion usefulness.
Background technology
Thermoelectric conversion component (Thermoelectric module/device) is a kind of assemblies with heat and two kinds of mutual transfer characteristics of energy of electricity, because its thermoelectric transfer characteristic, therefore has refrigeration/heat and the two kinds of applications of generating electricity.If thermoelectric conversion component is fed direct current, can make the assembly two ends produce into heat absorption and exothermic phenomenon respectively, therefore can be applicable to the technical field that needs refrigeration or heating; If make the thermoelectric conversion component two ends be in different temperatures respectively, then can make the thermoelectric conversion component output DC, therefore can be applicable to technical field of power generation.
Please refer to Fig. 1, it illustrates a kind of end view of traditional thermoelectric conversion component application apparatus.Traditional thermoelectric conversion device generally is made of the P type thermoelectric material 101 of bulk and the upper and lower base plate 121a/121b of N type thermoelectric material 102, conductive metal layer 111a/111b, scolder and electric insulation.Wherein the characteristic major decision of thermoelectric material 101,102 performance of thermoelectric conversion component.As shown in Figure 1, P type thermoelectric material 101 is generally vertical type with N type thermoelectric material 102, utilize conductive metal layer 111a/111b that P type, N type thermoelectric material are connected with series system, and its material of upper and lower base plate 121a/121b of electric insulation for example is a ceramic substrate.Be applied as example with thermoelectric cooling, the flow direction (go up current downflow) of the direct current of input in P type, N type thermoelectric material 101/102 is parallel with the hot direction of transfer of transition components (transmitting up and down), and the thermoelectric cooling assembly produces the temperature difference and inhales heat release at upper and lower.If with the thermo-electric generation is example, the thermoelectric conversion component temperature difference and direction of heat flow, parallel with the sense of current of generation in the thermoelectric material equally.Yet, the thermoelectric conversion component of this kind traditional structure, be subject to bulk thermoelectric material thermoelectric figure of merit (Figure of merit, ZT) characteristic bottleneck, its efficient is not high, usually the maximum refrigeration power of thermoelectric cooling (cooling capacity) approximately has only 3～5W/cm2, and the thermoelectric components generating efficiency is about 2～3% under 200 ℃ of temperature contrasts of cold and hot end.Desire improves thermoelectric conversion component usefulness, and it is the most direct and effective method that high ZT value thermoelectric material is used in the thermoelectric conversion module.
Though existing many researchs were devoted to promote the character of thermoelectric material and the usefulness of thermoelectric conversion component in the period of the past 20～30, but effect is also not obvious, main cause is that the ZT value of thermoelectric material is difficult to break through and approximates 1 bottleneck greatly, has limited the thermoelectric conversion component performance.When people's propositions such as professor Hicks of Massachusetts Institute Technology and Dresselhaus were reduced to nanoscale with the thermoelectric material yardstick during 1993 Christian eras, thermoelectric figure of merit ZT may significantly promote.Then in calendar year 2001 in Christian era, people such as the Venkatasubramanian of U.S. RTI research institute find P type Bi
2Te
3/ Sb
2Te
3Superlattice film ZT value can reach about 2.4 near the room temperature, has broken through the bottleneck of ZT～1.U.S. Hi-Z company research in 2004 Christian eras P type B
4C/B
9C and N type Si/SiGe quantum layer (quantum well) film, and experimental measurement estimation ZT value may be greater than 3.Therefore show that according to aforementioned result of study the film-type thermoelectric material has the advantage (fundamentally promoting the efficient of thermoelectric conversion component) of high ZT value, is expected to break through Traditional bulk material behavior bottleneck.In addition, it is few that the film-type thermoelectric material consumes material, no matter easily make the microminiature thermoelectric conversion component, be that its application potential will be more and more high in micromodule cooling (microcooling) or high-efficiency thermal electric generator (Thermoelectric generator) field.
Yet so the film-type thermoelectric material of potentialization directly is applied in when the assembly of conventional configuration, and but being difficult to has high performance performance.Please refer to Fig. 2, it illustrates the end view that a kind of tradition has the device of film-type thermoelectric conversion component.As shown in Figure 2, between the relative thicker upper and lower base plate 221a/221b of thickness (material), be provided with P type thermoelectric material film 201 and N type thermoelectric material film 202, and also have metal column 231 and conductive metal layer 211a/211b between thermoelectric material film 201/202 and the upper and lower base plate 221a/221b.And thermoelectric material film 201/202 is to bind with upper substrate 221a by solder layer 241, and 231 of metal columns pass through solder layer 242 and bind with infrabasal plate 221b.
As shown in Figure 2, if the film-type thermoelectric material directly is applied to the thermoelectric conversion device of conventional configuration, though the film-type thermoelectric material is had the effect that improves the ZT value by tentative confirmation, but electric current and hot-fluid by material still are the vertical thin-film direction, because the only tens of approximately nanometers of thin-film material thickness are between tens of microns, meaning is the spacing that the cold and hot end of thermoelectric transition components only has micron grade, and the hot junction requirement of dispelling the heat rapidly is very harsh, and hot-fluid easily returns and reduces the temperature difference and cooling effect.Moreover because thin-film material thickness is very thin, thermoelectric material and metal level joint interface resistance and thermal resistance influencing factor increase severely, and joule heating (Joule ' s heating) thermoelectric conversion component efficient also can detract.Therefore the film-type thermoelectric material directly imports the device of the thermoelectric conversion of tradition configuration, in fact and as expection high performance performance is arranged.
Summary of the invention
The object of the invention provides a kind of diaphragm type thermoelectric converting component, device and stack assemblies thereof, its structure can make electric current flow with the direction of parallel thermoelectric film material, and the distance of the cold and hot end of assembly also can be kept enough temperature difference, and make thermoelectric film material give full play to the advantage of its high ZT value, reach the purpose that improves the thermoelectric conversion of assembly usefulness.
According to a first aspect of the invention, propose a kind of diaphragm type thermoelectric converting component, comprise an annular insulating substrate and many group thermoelectric film materials at least.Annular insulating substrate has an annular inner edge, an annular outer edge and a first surface.Many group thermoelectric film materials are to be formed on the first surface of annular insulating substrate and to electrically connect, each thermoelectric film material group comprises a P type thermal electric film and a N type thermal electric film of electric connection, and the N type thermal electric film of each thermoelectric film material group is to electrically connect with the P type thermal electric film of adjacent thermoelectric film material group.Wherein, when an electric current passes through those thermoelectric film material groups in regular turn with the direction of parallel those P types and N type thermal electric film, be to form a temperature difference between the annular inner edge of annular insulating substrate and the annular outer edge.
According to a second aspect of the invention, propose a kind of diaphragm type thermoelectric conversion device, comprise at least: an annular insulating substrate, a plurality of first thermoelectric film material group and one first insulating barrier.Annular insulating substrate has an annular inner edge, an annular outer edge, a upper surface and a lower surface.A plurality of first thermoelectric film material groups are formed on the upper surface of annular insulating substrate and electrically connect, whenever this first thermoelectric film material group comprises a P type thermal electric film and a N type thermal electric film of electric connection, and whenever the N type thermal electric film of this first thermoelectric film material group is to electrically connect with the P type thermal electric film of adjacent thermoelectric film material group.First insulating barrier then is formed on the upper surface of annular insulating substrate and covers those first thermoelectric film material groups.Wherein, when an electric current passes through those first thermoelectric film material groups in regular turn with the direction of parallel those P types and N type thermal electric film, be to form a temperature difference between the annular inner edge of annular insulating substrate and the annular outer edge.
According to a third aspect of the invention we, be to propose the thermoelectric conversion of a kind of diaphragm type stack assemblies, comprise at least: one first insulating barrier, one first thermoelectric conversion component, one second insulating barrier, one second thermoelectric conversion component and one the 3rd insulating barrier.Wherein, the structure of first, second thermoelectric conversion component as mentioned above.And first insulating barrier is the thermoelectric film material group that is formed at the top of first thermoelectric conversion component and covers the upper surface that is positioned at counterpart substrate.Second insulating barrier is between first, second thermoelectric conversion component.The 3rd insulating barrier then is positioned at the below of second thermoelectric conversion component and covers the thermoelectric film material group of the lower surface that is positioned at counterpart substrate.Wherein, when an electric current passes through the thermoelectric film material group of first and second thermoelectric conversion component in regular turn (sense of current is parallel with the direction of those thermoelectric film material groups), be to form a temperature difference between the annular inner edge of two annular insulating substrate and the annular outer edge.
For foregoing of the present invention can be become apparent, preferred embodiment cited below particularly, and cooperate appended graphicly, be described in detail below:
Description of drawings
Fig. 1 illustrates a kind of end view of traditional thermoelectric conversion component application apparatus;
Fig. 2 illustrates the end view that a kind of tradition has the device of film-type thermoelectric conversion component;
Fig. 3 illustrates the schematic diagram according to the diaphragm type thermoelectric converting component of first embodiment of the invention;
Fig. 4 A is the generalized section of Fig. 3, is to illustrate the surface that P/N type thermoelectric film material group only is deposited on annular insulating substrate;
Fig. 4 B illustrates the generalized section according to the another kind of diaphragm type thermoelectric converting component of first embodiment of the invention, and the upper and lower surface of its substrate deposits P/N type thermoelectric film material simultaneously;
Fig. 5 A, Fig. 5 B are the schematic diagrames that illustrates according to the diaphragm type thermoelectric conversion device of second embodiment of the invention.Wherein, Fig. 5 B engages the schematic diagram of finishing for Fig. 5 A;
Fig. 6 A, Fig. 6 B illustrate according to the diaphragm type thermoelectric conversion device of Fig. 5 B and the schematic diagram of a kind of termal conductor module combination.Wherein, Fig. 6 B makes up the schematic diagram of finishing for Fig. 6 A;
Fig. 7 A, Fig. 7 B illustrate according to the diaphragm type thermoelectric conversion device of Fig. 5 B and the schematic diagram of another kind of termal conductor module combination.Wherein, Fig. 7 B makes up the schematic diagram of finishing for Fig. 7 A;
Fig. 8 A, Fig. 8 B are the schematic diagrames that illustrates according to the thermoelectric conversion of the diaphragm type stack assemblies of third embodiment of the invention.Wherein, Fig. 8 B finishes the schematic diagram of combination for Fig. 8 A assembly.
[primary clustering symbol description]
101:P type thermoelectric material
201:P type thermoelectric material film
102:N type thermoelectric material
202:N type thermoelectric material film
111a/111b, 211a/211b: conductive metal layer
121a/121b, 221a/221b: upper and lower base plate
231: metal column
241,242: solder layer
3,4: diaphragm type thermoelectric converting component
31: annular insulating substrate
312: first surface
313: second surface
316: annular inner edge
317: annular outer edge
32,42:P type thermal electric film
33,43:N type thermal electric film
35: the first electric conductors
36: the second electric conductors
37: the first leads
38: the second leads
45: the three electric conductors
46: the four electric conductors
4a: first thermoelectric conversion component
4b: second thermoelectric conversion component
5: thermoelectric conversion device
51,81: the first insulating barriers
53,83: the second insulating barriers
85: the three insulating barriers
55,87: through hole
61: the first heat conducting components
62,63: the second heat conducting components
632: radiating fin
65: thermal source
Embodiment
The present invention proposes a kind of diaphragm type thermoelectric converting component and stack assemblies thereof, the structure that it is special, can make thermoelectric film material give full play to the advantage of its high ZT value,, all can reach the purpose that improves the thermoelectric conversion of assembly usefulness no matter be application in refrigeration/heating or generating.
The present invention proposes first, second and the 3rd embodiment, is to illustrate respectively according to the thermoelectric conversion of a kind of diaphragm type thermoelectric converting component of the present invention, a kind of diaphragm type thermoelectric conversion device and a kind of diaphragm type stack assemblies.Yet thin bilge construction that embodiment proposed and fabrication steps be the usefulness for illustrating only, is not the scope of desire protection of the present invention is done limit.Moreover the diagram among the embodiment is also omitted unnecessary assembly, in order to clear demonstration technical characterstic of the present invention.
First embodiment
Please refer to Fig. 3, it illustrates the schematic diagram according to the diaphragm type thermoelectric converting component of first embodiment of the invention.Diaphragm type thermoelectric converting component 3 comprise an annular insulating substrate 31 and many group thermoelectric film materials (sets of thermoelectric thin film material pair, TEP).Wherein, annular insulating substrate 31 has a first surface 312, an annular inner edge 316 and an annular outer edge 317.Many group thermoelectric film materials for example are to be formed on the first surface 312 of annular insulating substrate 31 with depositional mode, and also electrically connect between those thermoelectric film material groups.Each thermoelectric film material group comprises a P type thermal electric film (oblique line block) 32 and one N type thermal electric film 33 (the N-typethermoelectric thin film elements of electric connection, TEE), and the N type thermal electric film 33 of each thermoelectric film material group be that P type thermal electric film 32 with adjacent thermoelectric film material group electrically connects.Wherein, the thickness of P type thermal electric film 32 and N type thermal electric film 33 is about between 10nm to the 200 μ m.In addition, be to electrically connect between the thermoelectric film material group with electric conductor.
As shown in Figure 3, more comprise a plurality of first electric conductor 35 and a plurality of second electric conductors 36 that are adjacent to annular outer edge 317 that are adjacent to annular inner edge 316 on the first surface 312 of annular insulating substrate 31.First electric conductor 35 is P type thermal electric film 32 and the N type thermal electric films 33 that electrically connect in each thermoelectric film material group; Second electric conductor 36 for example connects the N type thermal electric film 33 of each thermoelectric film material group and the P type thermal electric film 32 of adjacent thermoelectric film material group then in order to electrically connect two adjacent thermoelectric film material groups.First electric conductor 35 and second electric conductor 36 for example are to be formed on the first surface 312 of annular insulating substrate 31 with depositional mode.
Moreover, thermoelectric conversion component comprises that more lead is to be connected to those electric conductors, comprise one first lead 37 and one second lead 38, as shown in Figure 2, first lead 37 is to see through electric conductor to electrically connect with the P type thermal electric film 32 that is arranged in the first thermoelectric film material group; Second lead 38 is N type thermal electric film 33 electric connections that see through electric conductor and be arranged in the thermoelectric film material group of last position.
According to the structure of diaphragm type thermoelectric converting component shown in Figure 3, the electric current by those thermoelectric film material groups is the direction of parallel P type thermal electric film 32 and N type thermal electric film 33.When feeding an electric current, electric current enters in the 1st group of thermoelectric film material group of Fig. 3 structure, and this n group thermoelectric film material group (n is 〉=2 positive integer) flows out certainly.(for example annular inner edge 316 is cold can to form a temperature difference between the annular inner edge 316 of annular insulating substrate 31 and annular outer edge 317, and annular outer edge 317 heat), and can avoid cold and hot end hypotelorism in the conventional components (being that the thermal electric film upper and lower surface temperature difference distance that can cause is too short) and cause the problem of hot reflux.
It should be noted that, though be that the first surface 312 that is deposited on annular insulating substrate 31 simultaneously with P/N type thermoelectric film material is that example explains in Fig. 3, but the present invention is not as limit, also can be in another surface while sedimentary facies thermoelectric film material group together of substrate 31, to increase P/N type thermoelectric film material logarithm, improve thermoelectric conversion component refrigeration power or energy output.Please refer to Fig. 4 A and Fig. 4 B.Fig. 4 A is the generalized section of Fig. 3, is to illustrate the surface that P/N type thermoelectric film material group only is deposited on annular insulating substrate.Fig. 4 B then illustrates the generalized section according to the another kind of diaphragm type thermoelectric converting component of first embodiment of the invention; Wherein, the upper and lower surface of substrate deposits P/N type thermoelectric film material simultaneously.
Shown in Fig. 4 B, the second surface 313 of annular insulating substrate 31 (being respectively the following/upper surface of substrate 31) with first surface 312, be a plurality of second thermoelectric film material groups of deposition, each second thermoelectric film material group also comprises a P type thermal electric film 42 and a N type thermal electric film 43 of electric connection, and the N type thermal electric film 43 of per second thermoelectric film material group is that P type thermal electric film 42 with adjacent thermoelectric film material group electrically connects.And the P type thermal electric film 42 of per second thermoelectric film material group and N type thermal electric film 43 are to electrically connect with the 3rd electric conductor 45, and the position of the 3rd electric conductor 45 is to be adjacent to annular inner edge 316.The 4th electric conductor 46 is then in order to electrically connect the two second adjacent thermoelectric film material groups, for example connect the N type thermal electric film 43 of per second thermoelectric film material group and the P type thermal electric film 42 of the adjacent second thermoelectric film material group, and the position of the 4th electric conductor 46 is to be adjacent to annular outer edge 317.Thermal electric film arrangement mode and the annexation between the electric conductor of Fig. 4 B also can be with reference to Fig. 3.
Certainly, have and know the knowledgeable usually when knowing, during practical application, can be according to forming thermoelectric film material group (its single-sided structure is as shown in Figure 3) on required one side that flexibly is chosen in substrate of condition or the two sides, the present invention is to this and seldom limit.
In addition, annular insulating substrate 31 is to have characteristic adiabatic and exhausted electricity, and its material for example is the ceramic material of low heat conduction, as zirconia series, selenizing tungsten series etc., or heat-proof macromolecule material, as polyimides series etc.Right the present invention does not do restriction to the practical application material more.
The material of P type thermal electric film 32 and N type thermal electric film 33 is semiconductor or semimetallic elements or the compound with high thermoelectric figure of merit, for example be the bismuth telluride that mixes antimony and selenium ((Bi, Sb)
2(Te, Se)
3) series of compounds or the two selenizing tungsten (WSe of series, lead telluride (PbTe) and slicker solder tellurium (PbSnTe) series, silicon (Si) and SiGe (SiGe) series, half-Hao Sile (Half-Heusler) Jie metal alloy series (a kind of ferromagnetism nonferrous alloy), metal silicide (Silicide)
2) series etc.Moreover the depositional mode of thermal electric film can be sputter, hot evaporation, arc ion plating, chemical vapor coating, plating and chemical plating etc.During right practical application, need do the suitable selection of material and depositional mode, so the present invention to not limiting more this according to application conditions.
Material as for first electric conductor 35 and second electric conductor 36 for example is a conducting metal, and it can be low-resistance metal or alloy, for example copper (Cu), iron (Fe), chromium (Cr), nickel (Ni), molybdenum (Mo), tin (Sn), silver (Ag), gold (Au) etc.During right practical application, but also application feature is done suitably to select, and the present invention to this do not limit more.
Second embodiment
In a second embodiment, a thermoelectric conversion device is proposed.The upper and lower of the disclosed thermoelectric conversion component of first embodiment is provided with insulating barrier respectively, and the device after the combination can combine with the heat conducting component of exhausted electricity, and does the application of refrigeration or generating.In addition, be that with the substrate upper and lower surface thermoelectric film material to be arranged all be that example explains in a second embodiment.
Please refer to Fig. 5 A, Fig. 5 B, is the schematic diagram that illustrates according to the diaphragm type thermoelectric conversion device of second embodiment of the invention.Wherein Fig. 5 B engages the schematic diagram of finishing for Fig. 5 A.The assembly identical with Fig. 4 B is to continue to use same label among Fig. 5 A, Fig. 5 B.
Shown in Fig. 5 A, a thermoelectric conversion component 4 is provided earlier, comprise an annular insulating substrate 31 and a plurality of first, second thermoelectric film material group.Wherein those the first thermoelectric film material groups and the second thermoelectric film material group be formed at respectively the first surface 312 of annular insulating substrate 31 and second surface 313 (be substrate on/lower surface).
Each first thermoelectric film material group comprises a P type thermal electric film 32 and a N type thermal electric film 33 of electric connection, and the N type thermal electric film 33 of per first thermoelectric film material group is that P type thermal electric film 32 with adjacent thermoelectric film material group electrically connects.And the P type thermal electric film 32 of per first thermoelectric film material group and N type thermal electric film 33 are to electrically connect with first electric conductor 35, and the position of first electric conductor 35 is to be adjacent to annular inner edge 316.Second electric conductor 36 is then in order to electrically connect the two first adjacent thermoelectric film material groups, for example connect the N type thermal electric film 33 of per first thermoelectric film material group and the P type thermal electric film 32 of the adjacent first thermoelectric film material group, and the position of second electric conductor 36 is to be adjacent to annular outer edge 317.
Same, each second thermoelectric film material group also comprises a P type thermal electric film 42 and a N type thermal electric film 43 of electric connection, and the N type thermal electric film 43 of per second thermoelectric film material group is that P type thermal electric film 42 with adjacent thermoelectric film material group electrically connects.And the P type thermal electric film 42 of per second thermoelectric film material group and N type thermal electric film 43 are to electrically connect with the 3rd electric conductor 45, and the position of the 3rd electric conductor 45 is to be adjacent to annular inner edge 316.The 4th electric conductor 46 is then in order to electrically connect the two second adjacent thermoelectric film material groups, for example connect the N type thermal electric film 43 of per second thermoelectric film material group and the P type thermal electric film 42 of the adjacent second thermoelectric film material group, and the position of the 4th electric conductor 46 is to be adjacent to annular outer edge 317.When an electric current passes through those first, second thermoelectric film material groups in regular turn with the direction of parallel those P types and N type thermal electric film, can form a temperature difference between the annular inner edge 316 of annular insulating substrate 31 and the annular outer edge 317.
After forming thermoelectric conversion component 4, downside engages with one first insulating barrier 51 and one second insulating barrier 53 respectively thereon, and the thermoelectric conversion device behind the joint is shown in Fig. 5 B.First insulating barrier 51 is to be formed at first surface 312 places of annular insulating substrate 31 and to cover those first thermoelectric film material groups; Second insulating barrier 53 is to be formed at second surface 313 places of annular insulating substrate 31 and to cover those second thermoelectric film material groups.Wherein, the annular inner edge 316 of second insulating barrier 53 and annular insulating substrate 31 is to form a through hole 55.
In addition, first insulating barrier 51 and second insulating barrier 53 for the adiabatic material of exhausted electricity, for example are the ceramic materials of low heat conduction preferably, as zirconia series, selenizing tungsten series etc., or heat-proof macromolecule material, as polyimides series etc.Right the present invention does not do restriction to the practical application material more.
When the thermoelectric conversion device of using shown in Fig. 5 B 5, (cold and hot end) can engage with the termal conductor module of exhausted electricity respectively about it.Fig. 6 A, Fig. 6 B illustrate according to the diaphragm type thermoelectric conversion device of Fig. 5 B and the schematic diagram of a kind of termal conductor module combination.Wherein, Fig. 6 B makes up the schematic diagram of finishing for Fig. 6 A.
Shown in Fig. 6 A, Fig. 6 B, first heat conducting component 61 is to contact with the annular inner edge 316 (for example being cold junction) of annular insulating substrate 31 by the through hole 55 of thermoelectric conversion device 5; 62 of one second heat conducting components contact with the annular outer edge 317 (for example being the hot junction) of annular insulating substrate 31.
Fig. 7 A, Fig. 7 B illustrate according to the diaphragm type thermoelectric conversion device of Fig. 5 B and the schematic diagram of another kind of termal conductor module combination.Wherein, Fig. 7 B makes up the schematic diagram of finishing for Fig. 7 A.Can have a plurality of radiating fins 632 on the outer surface of second heat conducting component 63 (contacting) shown in Fig. 7 A, Fig. 7 B, to increase radiating efficiency with the hot junction.
No matter be the heat conducting component shown in Fig. 6 A, Fig. 6 B or Fig. 7 A, Fig. 7 B, after thermoelectric conversion device 5 (Fig. 5 B) combination, when electric current with the direction of parallel P type and N type thermal electric film in regular turn by those first, second thermoelectric film material groups on the annular insulating substrate 31, first heat conducting component 61 is vertical with the flow direction of electric current with second heat conducting component, 62/63 a formed direction of heat flow (above-below direction of device 5).
In addition, the present invention can be applicable to fields such as refrigeration/heating and generating, and is very diversified.With refrigeration applications, structure shown in Fig. 6 B and Fig. 7 B, first heat conducting component 61 can be attached on the thermal source (for example CPU) 65, the energising back contacts with the annular inner edge 316 (cold junction) of substrate 31 owing to first heat conducting component 61, can be in order to the temperature in heat of cooling source 65.In power generation applications,, can see through thermoelectric film material and do thermoelectric conversion and output DC if a thermal source (a for example blast pipe) is put into the through hole 55 of device 5 and caused the annular inner edge 316 of substrate 31 and the temperature difference of annular outer edge 317.
The 3rd embodiment
Except the use individual layer annular insulating substrate described in first and second embodiment as the diaphragm type thermoelectric converting component, when practical application, also can use multilager base plate to form thermoelectric conversion stack assemblies, to increase the effect of thermoelectric conversion.Certainly, each laminar substrate can be that single surface or upper and lower surface all have a plurality of thermoelectric film material groups as shown in Figure 3.The present invention also seldom limits this.
Please refer to Fig. 8 A, Fig. 8 B, is the schematic diagram that illustrates according to the thermoelectric conversion of the diaphragm type stack assemblies of third embodiment of the invention.Wherein Fig. 8 B finishes the schematic diagram of combination for Fig. 8 A assembly.In the 3rd embodiment, be to be that example explains with two-layer annular insulating substrate.
In the 3rd embodiment, the thermoelectric conversion of diaphragm type stack assemblies 8 comprises one first insulating barrier 81, one first thermoelectric conversion component 4a, one second insulating barrier 83, one second thermoelectric conversion component 4b and one the 3rd insulating barrier 85.After the combination, the annular inner edge of second insulating barrier 83, the 3rd insulating barrier 85 and two annular insulating substrate also forms a through hole 87.In addition, the structure of first and second thermoelectric conversion component 4a/4b is identical with thermoelectric conversion component 4 structures shown in Fig. 4 B, and the upper and lower surface of its substrate all has the thermoelectric film material group, this no longer giving unnecessary details more.
Shown in Fig. 8 A, Fig. 8 B, first insulating barrier 81 is the thermoelectric film material groups that are formed at the top of the first thermoelectric conversion component 4a and cover the upper surface that is positioned at counterpart substrate.Second insulating barrier 83 is between the first thermoelectric conversion component 4a and the second thermoelectric conversion component 4b.85 of the 3rd insulating barriers are positioned at the below of the second thermoelectric conversion component 4b and cover the thermoelectric film material group of the lower surface that is positioned at counterpart substrate.Wherein, when an electric current passes through the thermoelectric film material group of first and second thermoelectric conversion component 4a/4b in regular turn (sense of current is parallel with the direction of those thermoelectric film material groups), be to form a temperature difference between the annular inner edge of two annular insulating substrate and the annular outer edge.
Comprehensively above-mentioned, according to embodiments of the invention, electric current by the thermoelectric film material group is the direction of parallel P type thermal electric film 32 and N type thermal electric film 33, and formed temperature difference between the annular inner edge 316 of annular insulating substrate 31 and the annular outer edge 317, the not problem of cold and hot end hypotelorism in the conventional components.Moreover thermoelectric film material can be deposited on the upper surface and the lower surface of substrate simultaneously, increases P/N type thermoelectric film material logarithm, to improve thermoelectric conversion component refrigeration power or energy output.Therefore the structure of diaphragm type thermoelectric converting component of the present invention can be filled part advantage of the high ZT value of performance thin-film material, improves the usefulness of application apparatus.
In sum, though the present invention discloses as above with preferred embodiment, so it is not in order to limit the present invention.The persond having ordinary knowledge in the technical field of the present invention, without departing from the spirit and scope of the present invention, when being used for a variety of modifications and variations.Therefore, protection scope of the present invention is as the criterion when looking accompanying the claim person of defining.
Claims (26)
1. diaphragm type thermoelectric converting component is characterized in that comprising at least:
One annular insulating substrate has an annular inner edge, an annular outer edge and a first surface; With
Many group thermoelectric film materials, be formed on this first surface of this annular insulating substrate and electrically connect, each thermoelectric film material group comprises a P type thermal electric film and a N type thermal electric film of electric connection, and this N type thermal electric film of each thermoelectric film material group is that this P type thermal electric film with this adjacent thermoelectric film material group electrically connects
Wherein, when an electric current with the direction of parallel those P types and N type thermal electric film in regular turn by described thermoelectric film material group, be into a temperature difference between this annular inner edge of this annular insulating substrate and this annular outer edge.
2. thermoelectric conversion component as claimed in claim 1 is characterized in that comprising:
A plurality of first electric conductors are formed at this first surface of this annular insulating substrate, and whenever this first electric conductor is this P type thermal electric film and this N type thermal electric film that connects each thermoelectric film material group, and those first electric conductors are to be adjacent to this annular inner edge; With
A plurality of second electric conductors, be formed at this first surface of this annular insulating substrate, this N type thermal electric film of each thermoelectric film material group is to electrically connect by this second electric conductor with this P type thermal electric film of this adjacent thermoelectric film material group, and described second electric conductor is to be adjacent to this annular outer edge.
3. thermoelectric conversion component as claimed in claim 1 is characterized in that comprising:
One first lead is to electrically connect with this P type thermal electric film that is arranged in this first thermoelectric film material group; With
One second lead is this N type thermal electric film electric connection with this thermoelectric film material group that is arranged in last position.
4. thermoelectric conversion component as claimed in claim 1 is characterized in that, this annular insulating substrate is a ceramic material, an adiabatic exhausted electric material or a heat-proof macromolecule material.
5. as the described thermoelectric conversion component of Shen claim 4, it is characterized in that the material of this annular insulating substrate comprises zirconia, selenizing tungsten or polyimides.
6. thermoelectric conversion component as claimed in claim 1 is characterized in that, the thickness of described P type, N type thermal electric film is between 10nm to the 200 μ m.
7. thermoelectric conversion component as claimed in claim 1 is characterized in that, described P type and N type thermal electric film comprise the bismuth telluride that mixes antimony and selenium ((Bi, Sb)
2(Te, Se)
3), lead telluride (PbTe), slicker solder tellurium (PbSnTe), silicon (Si), SiGe (SiGe), half-Jie's Hao Sile metal alloy (Half-Heusler alloy), metal silicide (Silicide) or two selenizing tungsten (WSe
2).
8. diaphragm type thermoelectric conversion device is characterized in that comprising at least:
One annular insulating substrate has an annular inner edge, an annular outer edge, a upper surface and a lower surface;
A plurality of first thermoelectric film material groups, be formed on this upper surface of this annular insulating substrate and electrically connect, whenever this first thermoelectric film material group comprises a P type thermal electric film and a N type thermal electric film of electric connection, and whenever this N type thermal electric film of this first thermoelectric film material group is that this P type thermal electric film with this adjacent thermoelectric film material group electrically connects; With
One first insulating barrier is formed on this upper surface of this annular insulating substrate and covers those first thermoelectric film material groups,
Wherein, when an electric current with the direction of parallel described P type and N type thermal electric film in regular turn by the described first thermoelectric film material group, form a temperature difference between this annular inner edge of this annular insulating substrate and this annular outer edge.
9. thermoelectric conversion device as claimed in claim 8 is characterized in that comprising:
A plurality of first electric conductors are formed at this upper surface of this annular insulating substrate, and whenever this first electric conductor is to connect whenever this P type thermal electric film and this N type thermal electric film of this first thermoelectric film material group, and those first electric conductors are to be adjacent to this annular inner edge; With
A plurality of second electric conductors, be formed at this upper surface of this annular insulating substrate, whenever this N type thermal electric film of this first thermoelectric film material group is to electrically connect by this second electric conductor with this P type thermal electric film of this adjacent thermoelectric film material group, and those second electric conductors are to be adjacent to this annular outer edge.
10. thermoelectric conversion device as claimed in claim 9 is characterized in that comprising:
One first lead is to be connected with this P type thermal electric film that is arranged in this first first thermoelectric film material group; With
One second lead is to be connected with this N type thermal electric film of this first thermoelectric film material group that is arranged in last position.
11. thermoelectric conversion device as claimed in claim 9 is characterized in that comprising:
A plurality of second thermoelectric film material groups, be formed on this lower surface of this annular insulating substrate and electrically connect, whenever this second thermoelectric film material group also comprises a P type thermal electric film and a N type thermal electric film of electric connection, and whenever this N type thermal electric film of this second thermoelectric film material group is that this P type thermal electric film with this adjacent thermoelectric film material group electrically connects; With
One second insulating barrier is to be formed on this lower surface of this annular insulating substrate and to cover those second thermoelectric film material groups.
12. thermoelectric conversion device as claimed in claim 11 is characterized in that comprising:
A plurality of the 3rd electric conductors are formed at this lower surface of this annular insulating substrate, and per the 3rd electric conductor is to connect whenever this P type thermal electric film and this N type thermal electric film of this second thermoelectric film material group, and described the 3rd electric conductor is to be adjacent to this annular inner edge; With
A plurality of the 4th electric conductors, be formed at this lower surface of this annular insulating substrate, whenever this P type thermal electric film of this N type thermal electric film of this second thermoelectric film material group and adjacent this thermoelectric film material group electrically connects by the 4th electric conductor, and described the 4th electric conductor is to be adjacent to this annular outer edge.
13. thermoelectric conversion device as claimed in claim 11 is characterized in that, this annular inner edge of this second insulating barrier and this annular insulating substrate forms a through hole.
14. thermoelectric conversion device as claimed in claim 11 is characterized in that, described one first heat conducting component contacts with this annular inner edge of this annular insulating substrate by this through hole, and one second heat conducting component is to contact with this annular outer edge of this annular insulating substrate.
15. thermoelectric conversion device as claimed in claim 14 is characterized in that, an outer surface of this second heat conducting component has a plurality of fins.
16. thermoelectric conversion device as claimed in claim 14, it is characterized in that, when this electric current with the direction of parallel described P type and N type thermal electric film in regular turn by those first, second thermoelectric film material groups, the direction of heat flow that this first, second heat conducting component forms is vertical with the flow direction of this electric current.
17. thermoelectric conversion device as claimed in claim 8 is characterized in that, the thickness of described P type, N type thermal electric film is between 10nm to the 200 μ m.
18. the thermoelectric conversion of a diaphragm type stack assemblies is characterized in that comprising at least:
One first thermoelectric conversion component comprises:
One first annular insulating substrate has an annular inner edge, an annular outer edge, a upper surface and a lower surface; With
A plurality of first thermoelectric film material groups, be formed on this upper surface of this annular insulating substrate and electrically connect, whenever this first thermoelectric film material group comprises a P type thermal electric film and a N type thermal electric film of electric connection, and whenever this N type thermal electric film of this first thermoelectric film material group is that this P type thermal electric film with this adjacent thermoelectric film material group electrically connects;
One first insulating barrier is formed on this upper surface of this first annular insulating substrate and covers those first thermoelectric film material groups;
One second thermoelectric conversion component comprises:
One second annular insulating substrate has an annular inner edge, an annular outer edge, a upper surface and a lower surface; With
A plurality of second thermoelectric film material groups, be formed on this upper surface of this second annular insulating substrate and electrically connect, whenever this second thermoelectric film material group comprises a P type thermal electric film and a N type thermal electric film of electric connection, and whenever this N type thermal electric film of this second thermoelectric film material group is that this P type thermal electric film with this adjacent thermoelectric film material group electrically connects;
One second insulating barrier is between this first thermoelectric conversion component and this second thermoelectric conversion component; With
One the 3rd insulating barrier is positioned at this lower surface place of this second annular insulating substrate of this second thermoelectric conversion component,
Wherein, when an electric current passes through in regular turn with the direction of parallel those first and second thermoelectric film material groups, be to form a temperature difference between this annular inner edge of this first and second annular insulating substrate and this annular outer edge.
19. thermoelectric conversion stack assemblies as claimed in claim 18 is characterized in that this first thermoelectric conversion component also comprises:
A plurality of first electric conductors are formed at this upper surface of this first annular insulating substrate and are adjacent to this annular inner edge, and whenever this first electric conductor is to connect whenever this P type thermal electric film and this N type thermal electric film of this first thermoelectric film material group; With
A plurality of second electric conductors, be formed at this upper surface of this first annular insulating substrate and be adjacent to this annular outer edge, whenever this N type thermal electric film of this first thermoelectric film material group is to electrically connect by this second electric conductor with this P type thermal electric film of this adjacent thermoelectric film material group.
20. thermoelectric conversion stack assemblies as claimed in claim 18 is characterized in that this first thermoelectric conversion component more comprises:
A plurality of the 3rd thermoelectric film material groups, be formed on this lower surface of this first annular insulating substrate and electrically connect, per the 3rd thermoelectric film material group also comprises a P type thermal electric film and a N type thermal electric film of electric connection, and per this N type thermal electric film of the 3rd thermoelectric film material group is and this P type thermal electric film electric connection of this adjacent thermoelectric film material group, and wherein this second insulating barrier is to be positioned at this lower surface place of this first annular insulating substrate and to cover those the 3rd thermoelectric film material groups.
21. thermoelectric conversion stack assemblies as claimed in claim 20 is characterized in that this second thermoelectric conversion component comprises:
A plurality of the 4th thermoelectric film material groups, be formed on this lower surface of this second annular insulating substrate and electrically connect, per the 4th thermoelectric film material group also comprises a P type thermal electric film and a N type thermal electric film of electric connection, and per this N type thermal electric film of the 4th thermoelectric film material group is and this P type thermal electric film electric connection of this adjacent thermoelectric film material group, and wherein the 3rd insulating barrier is to be positioned at this lower surface place of this second annular insulating substrate and to cover those the 4th thermoelectric film material groups.
22. thermoelectric conversion stack assemblies as claimed in claim 18 is characterized in that those annular inner edge of this second insulating barrier, the 3rd insulating barrier and this first and second annular insulating substrate are to form a through hole.
23. thermoelectric conversion stack assemblies as claimed in claim 22, it is characterized in that, described one first heat conducting component contacts by those annular inner edge of this first and second annular insulating substrate of through hole and this, and one second heat conducting component is to contact with those annular outer edge of this first and second annular insulating substrate.
24. thermoelectric conversion stack assemblies as claimed in claim 23 is characterized in that an outer surface of this second heat conducting component is to have a plurality of fins.
25. thermoelectric conversion stack assemblies as claimed in claim 23, it is characterized in that, when this electric current with the direction of parallel described P type and N type thermal electric film in regular turn by those first, second thermoelectric film material groups, the direction of heat flow that this first, second heat conducting component forms is vertical with the flow direction of this electric current.
26. thermoelectric conversion stack assemblies as claimed in claim 18 is characterized in that the thickness of described P type, N type thermal electric film is between 10nm to the 200 μ m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN2007103081316A CN101471419B (en) | 2007-12-29 | 2007-12-29 | Film type thermoelectric conversion component, device and stacking component thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2007103081316A CN101471419B (en) | 2007-12-29 | 2007-12-29 | Film type thermoelectric conversion component, device and stacking component thereof |
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| Publication Number | Publication Date |
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| CN101471419A CN101471419A (en) | 2009-07-01 |
| CN101471419B true CN101471419B (en) | 2011-03-30 |
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| CN102832332A (en) * | 2012-06-15 | 2012-12-19 | 江苏物联网研究发展中心 | Flexible micro thermoelectric generator and manufacturing method thereof |
| CN110086239A (en) * | 2019-05-13 | 2019-08-02 | 北京洪泰智造信息技术有限公司 | A kind of electronic equipment and its heat energy utilization system and method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0437654A1 (en) * | 1990-01-16 | 1991-07-24 | Reinhard Dr. Dahlberg | Thermoelement branch with directional quantization of the charge carriers |
| JP2003060244A (en) * | 2001-08-10 | 2003-02-28 | Sumitomo Special Metals Co Ltd | Cooling element and thermoelectric conversion element |
| CN101043064A (en) * | 2006-03-24 | 2007-09-26 | 株式会社东芝 | Thermoelectric conversion module and method of manufacturing the same |
-
2007
- 2007-12-29 CN CN2007103081316A patent/CN101471419B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0437654A1 (en) * | 1990-01-16 | 1991-07-24 | Reinhard Dr. Dahlberg | Thermoelement branch with directional quantization of the charge carriers |
| JP2003060244A (en) * | 2001-08-10 | 2003-02-28 | Sumitomo Special Metals Co Ltd | Cooling element and thermoelectric conversion element |
| CN101043064A (en) * | 2006-03-24 | 2007-09-26 | 株式会社东芝 | Thermoelectric conversion module and method of manufacturing the same |
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| CN101471419A (en) | 2009-07-01 |
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