CN101465676A - Radio-frequency power amplifier circuit and control method thereof - Google Patents

Radio-frequency power amplifier circuit and control method thereof Download PDF

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Publication number
CN101465676A
CN101465676A CNA2007100945858A CN200710094585A CN101465676A CN 101465676 A CN101465676 A CN 101465676A CN A2007100945858 A CNA2007100945858 A CN A2007100945858A CN 200710094585 A CN200710094585 A CN 200710094585A CN 101465676 A CN101465676 A CN 101465676A
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CN
China
Prior art keywords
signal
power amplifier
radio
frequency power
bias
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Pending
Application number
CNA2007100945858A
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Chinese (zh)
Inventor
陈俊
钱永学
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RDA Microelectronics Co., Ltd.
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RDA MICROELECTRONICS (SHANGHAI) CORP Ltd
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Priority to CNA2007100945858A priority Critical patent/CN101465676A/en
Publication of CN101465676A publication Critical patent/CN101465676A/en
Pending legal-status Critical Current

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Abstract

The invention discloses a RF power amplifier circuit which comprises a RF power amplifier; the RF power amplifier is connected with a power control analog signal Vramp; the Vramp signal is also connected with an input end of an and gate; a bias circuit switch control signal TXEN is connected with the other input end of the and gate; the output end of the and gate is used as the switch control signal of the bias signal VBIAS. The invention also discloses a control method of RF power amplifier circuit; when the Vramp signal and TXEN signal are valid in the same time, the bias signal VBIAS is started to enable the RF power amplifier to operate; when at least one of the Vramp signal and the TXEN signal is invalid, the bias signal VBIAS is turned off to stop the RF power amplifier. The invention performs and operation towards the Vramp signal and TXEN signal, and adopts the two signals to control the on-off state of the RF power amplifier, avoids the RF signal leakage in pre-opening state and has better isolation degree, and improves the performance of RF power amplifier.

Description

Radio-frequency (RF) power amplifier circuit and control method thereof
Technical field
The present invention relates to a kind of analog circuit, relate in particular to a kind of radio-frequency (RF) power amplifier circuit.The invention still further relates to a kind of control method of radio-frequency (RF) power amplifier circuit.
Background technology
GSM (Global System for Mobile communication) is a kind of TDMA (Time-Division Multiple Access, time division multiple access) system, it is most widely used in the world at present mobile communication standard, regulation guarantees that the radio-frequency power from mobile phone was defined among the time and passage of distribution in its standard, and this requirement is called as " Power Time Mask (power time masterplate) " and " Switching Transients spectrum (switching transient spectrum) ".Purpose is to open or close can not accurately be controlled by mobile phone the time when radio-frequency power in order to prevent, transmission pulse may exceed normal range (NR) and disturb time slot and the frequency channel that closes in time domain or frequency domain.
The regulation of power time masterplate defines the least interference of closing between time slot.The switching transient spectrum is defined in power and rises (ramp-up) and descend (ramp-down) in the time interval, does not produce off-limits radio-frequency power.Transmission signals must be in the power and time restriction of a regulation.Figure 1 shows that GSM typical case time masterplate, the radio-frequency power that the time masterplate requires mobile phone must open or close it in 28us.After arriving the stable peak value of pulse signal, mobile phone has the 542.8us time to transmit information.All may disturb other closing on the mobile phone of time slot outside the official hour masterplate when any power output waveform drops on, even upset the time slot that self is assigned to.
The characteristic that power rises in the time masterplate or descends has defined the switching transient characteristic.If power rises or falling waveform is steep especially, so unnecessary radio-frequency power may be transmitted into outside the channel of appointment.Therefore, in order to satisfy the requirement of GSM on time masterplate and switching transient, existing technology is to use V in mobile phones design Ramp, TXEN and SW control signal define the pulse signal of transmission, as shown in Figure 2.V RampSignal is the output signal of DAC in the baseband circuit (Digital to Analog Converter, digital to analog converter), is used for the power output of control power amplifiers PA.Usually control the influence of time-delay in order to reduce, to V to switching transient RampSignal is provided with a lower pre-cut-in voltage V Offset, work as V RampGreater than V OffsetThe time, radio-frequency power amplifier work.The unlatching of TXEN signal controlling power amplifier or close is by the bias voltage V of control power amplifiers BIASRealize.The SW signal is the control signal of switch.
But, because traditional control mode is directly controlled V by the TXEN signal BIAS, when TXEN puts when high power amplifier V BIASOpen.At V RampLess than V OffsetThe time, promptly during the pre-opening of amplifier, radio-frequency power amplifier is not worked, but this moment is because V BIASOpen, cause the isolation of power amplifier very poor, still have the part radiofrequency signal to leak to output by power amplifier, performance number can up to-more than the 25dBm.Therefore, adopt existing method, the isolation of radio-frequency power amplifier when pre-opening is relatively poor, radiofrequency signal is leaked bigger, if the radiofrequency signal of leaking is bigger, exceed the confining spectrum of switching transient spectrum, then power amplifier may disturb other closing on the mobile phone of time slot, makes it can't operate as normal.
Summary of the invention
Technical problem to be solved by this invention provides the control method of a kind of radio-frequency (RF) power amplifier circuit and a kind of radio-frequency (RF) power amplifier circuit, can make radio-frequency power amplifier when pre-opening, have isolation preferably, reduce the leakage of radiofrequency signal, thereby improve the performance of radio-frequency power amplifier.
For solving the problems of the technologies described above, the technical scheme of radio-frequency (RF) power amplifier circuit of the present invention is, comprises radio-frequency power amplifier, and described radio-frequency power amplifier is connected with a power control analog signal V Ramp, described V RampSignal is also connected to an input with door, and bias switching circuit control signal TXEN is connected to another input described and door, with the output of door as offset signal V BIASSwitch controlling signal.
The present invention also provides a kind of control method of radio-frequency (RF) power amplifier circuit, and its technical scheme is to work as V RampWhen signal and TXEN signal are effective simultaneously, described offset signal V BIASOpen, make the radio-frequency power amplifier operate as normal; Work as V RampSignal and TXEN signal have one at least when invalid, described offset signal V BIASTurn-off, radio-frequency power amplifier is quit work.
The present invention passes through V RampSignal and TXEN signal carry out and computing after the switch of common control radio-frequency power amplifier, the leakage of radiofrequency signal has isolation preferably when having avoided pre-opening, has improved the performance of radio-frequency power amplifier.
Description of drawings
The present invention is further detailed explanation below in conjunction with drawings and Examples:
Fig. 1 is the schematic diagram of GSM typical case time masterplate;
Fig. 2 is the schematic diagram of existing radio-frequency (RF) power amplifier circuit;
Fig. 3 is the schematic diagram of radio-frequency (RF) power amplifier circuit of the present invention.
Embodiment
Radio-frequency (RF) power amplifier circuit of the present invention as shown in Figure 3, comprises radio-frequency power amplifier PA, and described radio-frequency power amplifier is connected with a power control analog signal V Ramp, described V RampSignal is also connected to an input with door, and bias switching circuit control signal TXEN is connected to another input described and door, with the output of door as offset signal V BIASSwitch controlling signal.
The present invention also provides a kind of control method of above-mentioned radio-frequency power amplifier, works as V RampWhen signal and TXEN signal are effective simultaneously, described offset signal V BIASOpen, make the radio-frequency power amplifier operate as normal; Work as V RampSignal and TXEN signal have one at least when invalid, described offset signal V BIASTurn-off, radio-frequency power amplifier is quit work.
As described V RampSignal voltage is higher than pre-cut-in voltage V OffsetThe time, described V RampSignal is effective; As described V RampSignal voltage is lower than pre-cut-in voltage V OffsetThe time, described V RampSignal is invalid.
As shown in Figure 3, TXEN and V RampSignal is the control signal of radio-frequency power amplifier module.V RampSignal is by the supply voltage of control radio-frequency power amplifier or the power output of Source Current Control power amplifier, TXEN signal and V RampSignal is by the bias voltage V of control radio-frequency power amplifier BIASThe unlatching of control power amplifiers.When TXEN puts height, V RampLess than V OffsetThe time, bias voltage V BIASDo not open, this moment, power amplifier was in pre-opening, because V BIASAnd V BIASAll do not open, this moment, power amplifier had very high isolation, the radiofrequency signal that leaks to the power amplifier output is very little, performance number is less than-35dBm, improve nearly 10dB than the traditional scheme isolation, thereby guarantee radiofrequency signal in the switching transient spectrum that defines, the operate as normal of guaranteed output amplifier.When TXEN puts height, and V RampGreater than V OffsetThe time, power amplifier bias voltage V BIASOpen radio-frequency power amplifier work.The SW signal is the control signal of switch.
In said process, have only as TXEN and put height and V RampGreater than V OffsetWhen two conditions satisfy simultaneously, the bias voltage V of power amplifier BIASJust open.
In sum, the present invention passes through V RampSignal and TXEN signal carry out and computing after the switch of common control radio-frequency power amplifier, the leakage of radiofrequency signal has isolation preferably when having avoided pre-opening, has improved the performance of radio-frequency power amplifier.

Claims (3)

1. a radio-frequency (RF) power amplifier circuit comprises radio-frequency power amplifier, and described radio-frequency power amplifier is connected with a power control analog signal V Ramp, it is characterized in that described V RampSignal is also connected to an input with door, and bias switching circuit control signal TXEN is connected to another input described and door, with the output of door as offset signal V BIASSwitch controlling signal.
2. the control method of a radio-frequency power amplifier as claimed in claim 1 is characterized in that, works as V RampWhen signal and TXEN signal are effective simultaneously, described offset signal V BIASOpen, make the radio-frequency power amplifier operate as normal; Work as V RampSignal and TXEN signal have one at least when invalid, described offset signal V BIASTurn-off, radio-frequency power amplifier is quit work.
3. the control method of radio-frequency power amplifier according to claim 2 is characterized in that, as described V RampSignal voltage is higher than pre-cut-in voltage V OffsetThe time, described V RampSignal is effective; As described V RampSignal voltage is lower than pre-cut-in voltage V OffsetThe time, described V RampSignal is invalid.
CNA2007100945858A 2007-12-20 2007-12-20 Radio-frequency power amplifier circuit and control method thereof Pending CN101465676A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CNA2007100945858A CN101465676A (en) 2007-12-20 2007-12-20 Radio-frequency power amplifier circuit and control method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNA2007100945858A CN101465676A (en) 2007-12-20 2007-12-20 Radio-frequency power amplifier circuit and control method thereof

Publications (1)

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CN101465676A true CN101465676A (en) 2009-06-24

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104025452A (en) * 2011-12-28 2014-09-03 株式会社村田制作所 High frequency signal processing apparatus and wireless communication apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104025452A (en) * 2011-12-28 2014-09-03 株式会社村田制作所 High frequency signal processing apparatus and wireless communication apparatus

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Owner name: RDA TECHNOLOGY CO., LTD.

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Applicant before: RDA Microelectronics (Shanghai) Corp. Ltd.

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Application publication date: 20090624