CN101465628A - Film bulk acoustic wave resonator and preparation method thereof - Google Patents
Film bulk acoustic wave resonator and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a thin film bulk acoustic wave resonator which comprises a substrate, a buffer layer, a piezoelectric layer and electrodes, and is characterized in that 1. A smooth concave groove and the buffer layer are arranged on the upper end surface of the substrate; the buffer layer crosses the concave groove and forms an air gap provided with a smooth upper convex edge with the substrate, and completely covers the air gap; the height of the lower top surface of the air gap is less than that of the substrate, and the air gap has flat surface and even change edge; 2. The edge of the buffer layer, which is contacted with the air gap and is close to the substrate is in smooth and outer-convex shape; the piezoelectric layer is arranged on the buffer layer; the electrodes include a bottom electrode and a top electrode; the bottom electrode is arranged in the piezoelectric layer on the buffer layer; the top electrode is arranged on the piezoelectric layer. The thin film bulk acoustic wave resonator has ingenious structure; a FBAR with stable structure and low loss can be fabricated on the substrate through the method, and the CMP process is avoided, so the thin film bulk acoustic wave resonator can be integrated into a CMOS chip conveniently.
Description
Technical field
The present invention relates to the thin film bulk acoustic resonator technical field, be specifically related to a kind of thin film bulk acoustic resonator and preparation method thereof.
Background technology
The multifunction development of wireless communication terminal has proposed microminiaturization, high-frequency, high-performance, low-power consumption, low-cost contour specification requirement to radio-frequency devices.The high band insertion loss of traditional SAW (Surface Acoustic Wave) device more than 2.4GHz is big, but the microwave-medium technology has good performance volume too big.Thin film bulk acoustic resonator (FBAR) technology is a kind of new radio-frequency devices technology that occurs along with raising and modern wireless communication technique, the especially fast development of personal radio communication technology of technology level in recent years.It has high Q value (more than 1000) and can be integrated in advantage on the IC chip, has avoided the shortcoming of sound table resonator and dielectric resonator simultaneously effectively.
FBAR is the thin-film device of the sandwich structure of the electrode that is produced on the backing material---piezoelectric film---electrode.The piezoelectric of FBAR adopts PZT, ZnO and aluminium nitride usually.Wherein the aluminium nitride velocity of sound is the highest, therefore is applied to higher frequency, meets the requirement of present radio communication toward the high frequency development.And aluminium nitride has other relatively two kinds, and the material temperature loss is low, chemical stability good, the simple relatively advantage of preparation technology.In addition, materials such as zinc, lead, zirconium are the materials of danger close for CMOS technology, because they can seriously reduce the life-span of charge carrier in the semiconductor, and there is not this problem in aluminium nitride.Therefore, aluminium nitride is the ideal material of FBAR compatibility in cmos device.
The structure of FBAR has air-gap type, Bragg reflection type (SMR) and back-etching type.Wherein the relative SMR type of air-gap type FBAR Q value wants high, and loss is little; Back-etching type FBAR need not remove large-area substrate relatively, and mechanical strength is higher.Therefore, air-gap type FBAR is the first-selection that is integrated on the cmos device.
Usually the structure of air-gap type FBAR as shown in Figure 1.It comprises crosses over hearth electrode, piezoelectric layer and the top electrode that air-gap is made successively on air-gap on substrate, the substrate, the substrate.Common process is: anisotropic etch goes out a pit on silicon substrate earlier, fills sacrificial layer material then in pit, and sacrificial layer material can be Al, Mg or silicon dioxide.The surface is sputter growth layer of metal film after the CMP polishing, and corresponding position above sacrifice layer etches the hearth electrode figure.Deposit one deck piezoelectric film then above hearth electrode, after etching, this piezoelectricity membrane cover is crossed the border of pit on the substrate, and exposes the exit of hearth electrode.Next on piezoelectric film, deposit layer of metal film, etch the top electrode figure.Next erode away a window on the piezoelectric layer by being dry-etched in, sacrifice layer is partly exposed.From the release window that carves sacrifice layer is discharged at last, the FBAR that strides across air-gap on the substrate has just made.
In order to reduce the performance of manufacture difficulty and raising FBAR, forefathers proposed many corrective measures, " making the film bulk acoustic resonator structure of improving one's methods and realizing with this method of thin film bulk acoustic resonator " (publication number: CN1373556 as Anjelen Sci. ﹠ Tech. Inc, open day: 2002.10.09), proposed on substrate, to increase the making that raceway groove is beneficial to the sacrifice layer release aperture.People's such as Tetsuo Yamada " Method OfProducing Thin Film Bulk Acoustic Resonator " (publication number: US7140084B2, date of publication: 2006.11.28) proposed to reduce the quality that roughness of film improves FBAR.But still there is shortcoming in the structure after these improve: 1. in order to guarantee that FBAR has good frequency stability, the zone between hearth electrode and the top electrode needs very smooth.Need to adopt high accuracy CMP technology to polish silicon face, increased requirement, and be unfavorable for processing FBAR on the CMOS chip process equipment and the control of silicon wafer thickness precision.2. on the piezoelectric layer certain thickness amorphous transitional region is arranged usually, when the applying frequency of FBAR rises to tens GHz when above from several GHz, piezoelectric layer can be made more and more thinlyyer, the piezoelectric film thickness of preferred orientation will reduce with the ratio of amorphous transitional region thickness, this will cause the insertion loss of FBAR to become big, and the Q value reduces.This has just limited the development of FBAR toward high frequency direction.
Therefore, still there are such needs to improve the manufacturing technology of air-gap type FBAR, promptly adopt conventional CMOS production technology just can obtain the surface of smooth FBAR resonance region, with the manufacture difficulty of reduction FBAR and the compatibility of raising and cmos circuit, and adopt suitable technology to improve the quality of piezoelectric film, reduce the insertion loss of FBAR and promote applying frequency.
Summary of the invention
Problem to be solved by this invention is: how a kind of thin film bulk acoustic resonator and preparation method thereof is provided, this bulk acoustic resonator structure novelty, this method can be produced Stability Analysis of Structures, the little FBAR of loss on substrate, and need not to adopt CMP technology, helps being integrated in the CMOS chip.
Technical problem proposed by the invention is to solve like this: a kind of thin film bulk acoustic resonator is provided, comprises substrate, resilient coating, piezoelectric layer and electrode, it is characterized in that:
1. the substrate upper surface is provided with level and smooth groove and resilient coating, described resilient coating crosses over groove and substrate formation one has the air-gap of level and smooth upward flange and covers this air-gap fully, the height of end face is lower than substrate under the described air-gap, has the border of even curface and smooth variation;
2. described resilient coating with air-gap contact-making surface and the edge that closes on substrate be level and smooth convex shape, described piezoelectric layer is set on the resilient coating, electrode comprises hearth electrode and top electrode, and described hearth electrode is arranged on the resilient coating in the piezoelectric layer, described top electrode be arranged on piezoelectric layer above.
According to thin film bulk acoustic resonator provided by the present invention, it is characterized in that described resilient coating is amorphous aln layer, piezoelectric layer is the aln layer of c axle orientation, substrate is a silicon substrate.
According to thin film bulk acoustic resonator provided by the present invention, it is characterized in that be provided with sacrifice layer and discharge window, this discharges window between air-gap border and boundary electrode.
A kind of preparation method of thin film bulk acoustic resonator is characterized in that, may further comprise the steps:
1. on substrate, prepare one deck silicon nitride film;
2. make the window with sacrifice layer profile on silicon nitride film by lithography, i.e. the profile of the profile of air-gap on substrate falls the silicon nitride etch at window place;
3. the method by partial thermal oxidation forms silicon dioxide sacrificial layer at the window place, and the time of control thermal oxidation obtains needed sacrificial layer thickness, and this silicon dioxide sacrificial layer has the border of even curface and smooth variation;
4. remove residual silicon nitride;
5. adopt method low-temperature epitaxy one deck amorphous state aluminium nitride of sputter, promptly required resilient coating forms air-gap;
6. at the upper surface sputter of resilient coating growth layer of metal layer and make the hearth electrode figure by lithography;
7. form behind the hearth electrode on hearth electrode growth one deck piezoelectric layer and etch the piezoelectric layer figure, this piezoelectric layer graphic limit is greater than the border of air-gap;
8. at the upper surface deposition top electrode of piezoelectric layer, etch the figure of top electrode;
9. releasing sacrificial layer is also dry.
A kind of preparation method of bulk acoustic wave resonator is characterized in that, may further comprise the steps:
1. on through the silicon face of polishing with the silicon nitride of CVD method deposition one deck 80～120nm, this polished surface is (100), (110) or (111) orientation, removes with the method for the photoetching silicon nitride with corresponding sacrifice layer zone then;
2. at the silicon face of the above-mentioned silicon nitride of having grown, handle by local means of wet thermal oxidation, be removed the region growing layer of silicon dioxide of silicon nitride, the thickness of this silicon dioxide is between 400nm～800nm;
3. remove the remaining silicon nitride of silicon face;
4. after above-mentioned steps, amorphous state aln layer at silicon face growth one deck 60～80nm, sputter growth layer of metal and make the hearth electrode figure by lithography on the amorphous state aln layer then, this hearth electrode material adopts molybdenum, thickness is 100～200nm, and the amorphous state aluminium nitride is less than 200 ℃, power density＜5Wcm
-2Condition under obtain by the method for radio frequency sputtering;
5. after above-mentioned steps, at the aluminium nitride piezoelectric layer of silicon face growth one deck c axle orientation, the thickness of this aluminium nitride piezoelectric layer is according to the frequency range decision of practical application, and the aluminium nitride piezoelectric layer of c axle orientation is in temperature〉250 ℃, power density〉10Wcm
-2And nitrogen gas concn〉method by radio frequency sputtering under 50% the condition obtains;
6. go out the figure of piezoelectric layer with wet etching, this piezoelectric layer graphic limit profile is greater than the air-gap boundary profile, and when etching the piezoelectric layer figure, sacrifice layer discharges window and also is etched out, discharges window between air-gap border and boundary electrode;
7. sputtering sedimentation top electrode metal, and etch the top electrode figure.This top electrode material adopts molybdenum usually, and thickness is 100～200nm;
8. releasing sacrificial layer and drying.
Beneficial effect of the present invention: the present invention is innovation to some extent structurally, it has the air-gap on the border of even curface and smooth variation, satisfied resonance range between FBAR hearth electrode and the top electrode to the requirement of evenness, the border of smooth variation has avoided the radio frequency sputtering plated film that steep step is covered bad problem simultaneously, so air-gap boundary film has enough thickness to support entire device; Be provided with resilient coating in addition, it has even curface at resonance range, and be connected on the substrate by mild cambered surface at boundary, it is material that this resilient coating adopts non-crystalline aluminum nitride, effect is to solve the hearth electrode material to go up the not firm problem that adheres at the silicon dioxide or the phosphorosilicate glass (PSG) of thermal oxide growth, the identical chemical property of this amorphous aluminium nitride material resilient coating piezoelectric layer material can be removed unnecessary buffer layer part simultaneously when the etching piezoelectric layer, can not increase technology difficulty.
Preparation method of the present invention has following advantage compared with the FBAR of prior art: at first, the preparation of sacrifice layer need not to introduce the CMP process, can obtain by traditional oxidation furnaces, thus the requirement of manufacture craft reduced to equipment, and more convenient incorporating in the CMOS processing step; Secondly, it is thinner that the piezoelectric layer of the FBAR of this fabrication techniques can guarantee to do under the situation of the insertion loss that does not increase device, thus help with the applying frequency of FBAR do higher.
The method of local means of wet thermal oxidation making sacrifice layer also is characteristics of the present invention on silicon, the sacrifice layer that obtains on the silicon substrate that polished by this method has very smooth end face, the edge that has mild transition simultaneously, its flat top surface has satisfied resonance range between FBAR hearth electrode and the top electrode to the requirement of evenness, and the edge of its mild transition has guaranteed that each rete of follow-up sputter growth is unlikely to occur because the not high problem of mechanical strength that causes that approaches is crossed at the edge.Therefore, the sacrifice layer that obtains with this manufacture method can substitute through CMP and polish formed sacrifice layer.Means of wet thermal oxidation technology wherein is the CMOS common process, need not equipment is transformed in the manufacture craft that promptly can be used for FBAR.
Preparation method of the present invention also has characteristics, be before deposition hearth electrode metal, earlier deposit amorphous aluminium nitride about one deck 100nm in the method by radio frequency sputtering on the sacrifice layer of partial thermal oxidation, the effect of the non-crystalline aluminum nitride of this layer is to solve the hearth electrode material to go up the not firm problem that adheres at the silicon dioxide or the phosphorosilicate glass (PSG) of thermal oxide growth, this issue table has been grown behind the piezoelectric layer now, the part hearth electrode will be peeled off from sacrifice layer, thereby causes the piezoelectric layer cracking.And after adding the amorphous aln layer between hearth electrode and the sacrifice layer, this problem will be solved.The resilient coating that adopts this material of non-crystalline aluminum nitride to provide a lattice constant to be complementary for hearth electrode and piezoelectric layer simultaneously, helping adopting aluminium nitride is the improvement of the piezoelectric layer preferred orientation performance of material.This amorphous aluminium nitride material has the chemical property identical with the piezoelectric layer material, can remove unnecessary resilient coating simultaneously when the etching piezoelectric layer, can not increase technology difficulty.
The sacrifice layer border of partial thermal oxidation formation can be by an etching success of wet etching so that run through the sacrifice layer release window of piezoelectric layer and resilient coating greater than the border of the hearth electrode and the summit utmost point in addition.Finally, adopt dilution HF or HF buffer solution that sacrifice layer is discharged from etching window.Therefore, adopt the FBAR of made of the present invention will can not increase numerous and diverse degree of technology.
Description of drawings
Fig. 1 illustrates air-gap type FBAR structure chart in the prior art
Fig. 2 illustrates the air-gap type FBAR profile of making by the present invention;
Fig. 3 is illustrated on the substrate silicon CVD method growth one deck silicon nitride film, and the cutaway view behind the silicon nitride in corresponding sacrifice layer zone is removed in photoetching;
Fig. 4 illustrates by the cutaway view of partial thermal oxidation method behind growthing silica on the substrate;
Fig. 5 illustrates the cutaway view behind the removal remaining silicon nitride;
Growth and etching are finished the cutaway view behind the hearth electrode on Fig. 6 the has been illustrated in sputter amorphous aln layer;
Fig. 7 illustrates the cutaway view behind the deposit aluminum nitride piezoelectric layer;
Fig. 8 illustrates the profile behind the release window that etches on aluminium nitride border and the aluminium nitride;
Fig. 9 illustrates the profile of the FBAR behind the top electrode of having grown.
Embodiment
Below in conjunction with accompanying drawing the present invention is further described:
New FBAR structure provided by the present invention comprises substrate 1, air-gap 2, resilient coating (amorphous state aln layer), hearth electrode 4, aluminium nitride piezoelectric layer 5, top electrode 13 and discharges window 6,7 as shown in Figure 2.
The backing material of FBAR provided by the present invention adopts silicon, and the height of end face is higher than the upper surface of substrate 1 on the air-gap 2, and the height of 2 times end faces of air-gap is lower than the upper surface of substrate 1.One deck amorphous aluminum nitride buffer layer 3 is arranged on the upper surface of air-gap 2, and this amorphous state aluminum nitride buffer layer 3 strides across the border of air-gap, and thickness is not more than 0.10 micron.Be followed successively by hearth electrode 4, aluminium nitride piezoelectric layer 5 and top electrode 13 on the amorphous aluminum nitride buffer layer 3.Hearth electrode 4 and top electrode 13 require to be in the border of air-gap 2 perpendicular to the overlapping region of substrate top surface direction.
Below be the specific embodiment of the present invention:
1) at the silicon nitride of using on silicon 1 surface of process polishing about CVD method deposition one deck 100nm.This polished surface can be (100), (110) or (111) orientation.Remove with the method for the photoetching silicon nitride with corresponding sacrifice layer zone then, the silicon nitride that stays 8,9 place parts as shown in Figure 3.
2) at the silicon face of the above-mentioned silicon nitride 8,9 of having grown, handle, be removed the region growing layer of silicon dioxide 10 of silicon nitride by means of wet thermal oxidation.The thickness of this silicon dioxide is between 400nm～800nm.As shown in Figure 4.
3) after above-mentioned steps, remove the remaining silicon nitride 8,9 of silicon face, stay silica 10 part.As shown in Figure 5.
4) after above-mentioned steps, the amorphous aln layer 11 about silicon face growth one deck 100nm, sputter growth layer of metal and make hearth electrode figure 4 by lithography on amorphous aln layer 11 then, this hearth electrode material adopts molybdenum usually, and thickness is 100～200nm.As shown in Figure 6.Amorphous aln layer 11 can be at low temperature (＜200 ℃), low power density (＜5Wcm
-2) condition under obtain by the method for radio frequency sputtering.
5) after above-mentioned steps, at the aln layer 12 of silicon face growth one deck c axle orientation.The thickness of this aln layer 12 is according to the frequency range decision of practical application.As shown in Figure 7.The aln layer 12 of c axle orientation can be in temperature〉250 ℃, power density〉10Wcm
-2And nitrogen gas concn〉method by radio frequency sputtering under 50% the condition obtains.
6) with the method etching aluminium nitride layer 12 of wet etching, obtain piezoelectric layer figure 5.These piezoelectric layer figure 5 boundary profiles are greater than the air-gap boundary profile.When etching piezoelectric layer figure 5, sacrifice layer discharges window 6,7 and also is etched out.This discharges window 6,7 between air-gap border and boundary electrode.Because be aluminium nitride, so can being etched easily, wears by release window 6,7, until exposing sacrifice layer 10 at this interval material.As shown in Figure 8.
7) sputtering sedimentation top electrode metal, and etch top electrode figure 13.This top electrode material adopts molybdenum usually, and thickness is 100～200nm.As shown in Figure 9.
8) releasing sacrificial layer exposes air-gap 2.Dry.As shown in Figure 2.
Claims (5)
1, a kind of thin film bulk acoustic resonator comprises substrate, piezoelectric layer and electrode, it is characterized in that:
1. the substrate upper surface is provided with level and smooth groove and resilient coating, described resilient coating crosses over groove and substrate formation one has the air-gap of level and smooth upward flange and covers this air-gap fully, the height of end face is lower than substrate under the described air-gap, has the border of even curface and smooth variation;
2. described resilient coating with air-gap contact-making surface and the edge that closes on substrate be level and smooth convex shape, described piezoelectric layer is set on the resilient coating, electrode comprises hearth electrode and top electrode, and described hearth electrode is arranged on the resilient coating in the piezoelectric layer, described top electrode be arranged on piezoelectric layer above.
2, thin film bulk acoustic resonator according to claim 1 is characterized in that, described resilient coating is amorphous aln layer, and piezoelectric layer is the aluminium nitride piezoelectric layer, and substrate is a silicon substrate.
3, thin film bulk acoustic resonator according to claim 1 is characterized in that, is provided with sacrifice layer and discharges window, and this discharges window between air-gap border and boundary electrode.
4, a kind of preparation method of thin film bulk acoustic resonator is characterized in that, may further comprise the steps:
1. on substrate, prepare one deck silicon nitride film;
2. make the window with sacrifice layer profile on silicon nitride film by lithography, i.e. the profile of the profile of air-gap on substrate falls the silicon nitride etch at window place;
3. the method by partial thermal oxidation forms silicon dioxide sacrificial layer at the window place, and the time of control thermal oxidation obtains needed sacrificial layer thickness, and this silicon dioxide sacrificial layer has the border of even curface and smooth variation;
4. remove residual silicon nitride;
5. adopt method low-temperature epitaxy one deck amorphous state aluminium nitride of sputter, promptly required resilient coating forms air-gap;
6. at the upper surface sputter of resilient coating growth layer of metal layer and make the hearth electrode figure by lithography;
7. form behind the hearth electrode on hearth electrode growth one deck piezoelectric layer and etch the piezoelectric layer figure, this piezoelectric layer graphic limit is greater than the border of air-gap;
8. at the upper surface deposition top electrode of piezoelectric layer, etch the figure of top electrode;
9. releasing sacrificial layer is also dry.
5, a kind of preparation method of bulk acoustic wave resonator is characterized in that, may further comprise the steps:
1. on through the silicon face of polishing with the silicon nitride of CVD method deposition one deck 80～120nm, this polished surface is (100), (110) or (111) orientation, removes with the method for the photoetching silicon nitride with corresponding sacrifice layer zone then;
2. at the silicon face of the above-mentioned silicon nitride of having grown, handle by local means of wet thermal oxidation, be removed the region growing layer of silicon dioxide of silicon nitride, the thickness of this silicon dioxide is between 400nm～800nm;
3. remove the remaining silicon nitride of silicon face;
4. after above-mentioned steps, amorphous state aln layer at silicon face growth one deck 60～80nm, sputter growth layer of metal and make the hearth electrode figure by lithography on the amorphous state aln layer then, this hearth electrode material adopts molybdenum, thickness is 100～200nm, and the amorphous state aluminium nitride is less than 200 ℃, power density＜5Wcm
-2Condition under obtain by the method for radio frequency sputtering;
5. after above-mentioned steps, at the aluminium nitride piezoelectric layer of silicon face growth one deck c axle orientation, the thickness of this aluminium nitride piezoelectric layer is according to the frequency range decision of practical application, and the aluminium nitride piezoelectric layer of c axle orientation is in temperature〉250 ℃, power density〉10Wcm
-2And nitrogen gas concn〉there is the method for radio frequency sputtering to obtain under 50% the condition;
6. go out the figure of piezoelectric layer with wet etching, this piezoelectric layer graphic limit profile is greater than the air-gap boundary profile, and when etching the piezoelectric layer figure, sacrifice layer discharges window and also is etched out, discharges window between air-gap border and boundary electrode;
7. sputtering sedimentation top electrode metal, and etch the top electrode figure, this top electrode material adopts molybdenum, and thickness is 100～200nm;
8. releasing sacrificial layer and drying.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101217266B (en) * | 2008-01-09 | 2011-06-15 | 电子科技大学 | A novel acoustic wave syntonizer and the corresponding preparation method |
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