CN101458356A - Light polarization structure and illuminating device - Google Patents
Light polarization structure and illuminating device Download PDFInfo
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- CN101458356A CN101458356A CNA2007101997402A CN200710199740A CN101458356A CN 101458356 A CN101458356 A CN 101458356A CN A2007101997402 A CNA2007101997402 A CN A2007101997402A CN 200710199740 A CN200710199740 A CN 200710199740A CN 101458356 A CN101458356 A CN 101458356A
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Abstract
The invention provides a light polarization structure and a light-emitting device. The light polarization structure comprises first strip monomers and second strip monomers with different width and sizes which are arranged on a substrate in terms of different periods in an interlaced way. The adjacent first strip monomers have a first space which is not equal to a second space between the adjacent second strip monomers. As the first and the second strip monometers with different sizes are arranged in terms of different periods, polarization ratio and rate of penetration of an incoming ray are improved. In addition, according to the light polarization structure, the relatively high polarization ratio and the relatively high rate of penetration can be acquired when an incidence angle is relatively large.
Description
Technical field
The present invention relates to a kind of polarization structure, particularly a kind of metal gate, and the polarization structure of arranging with different cycles ground with different width dimensions, and use the light-emitting device of this polarization structure.
Background technology
Generally speaking, only exist with the form of unpolarizedization.Yet light is essential through after the polarization, just can be used in the display, for example LCD (liquid crystal display).In known, light can see through the mode of metal gate polaroid (wire grid polarizer), macromolecule polaroid (polymer polarizer) or multilayer film polaroid, makes its polarization.Yet the design of above-mentioned metal gate polarization structure can reduce the penetrance of light usually.In addition, during with bigger angle incident, (PS ratio) is lower usually for the penetrance of light and polarization ratio at light.
Light emitting diode (light emitting diode; LED) because of advantages such as it have that high brightness, volume are little, in light weight, low power consumption and life-span are long, show in the product so be widely used in.Particularly, the light source in the display.Yet, by the light that the luminescent layer of light emitting diode is launched, essential material layer through a plurality of different refractivities, the light that makes most of luminescent layer launch can be reflected back toward at semiconductor-based the end, and causes the light emission rate of light emitting diode on the low side.
Fig. 1 shows a kind of sectional view of light emitting diode.In Fig. 1, epitaxial loayer 6 and luminescent layer 4 are formed at the top of substrate 2, and clad 8 coats said elements.As shown in Figure 1, luminescent layer 4 can emission light.When light is incident to the heavy stacked of different refractors, for example epitaxial loayer 6 and clad 8, the light of part can be reflected, and by luminescent layer and electrode layer absorbs or escape from the side of light emitting diode.Generally speaking, for being the luminescent layer of the light emitting diode (GaN based LED) of matrix with the gallium nitride in air, the light that it produced only about 4.59% can be through the refraction bright dipping to air.In addition, the light that light emitting diode produced just can be used in display after also needing polarization simultaneously.Yet, handle through polarization again, the light extraction efficiency of light emitting diode is reduced more.
Therefore, need a kind of light-emitting device that improves the polarization structure of incident light penetrance and polarization ratio and use this polarization structure badly, and this light-emitting device can be launched the light of high polarization ratio.
Summary of the invention
In view of this, the invention provides a kind of polarization structure.Above-mentioned polarization structure, comprise substrate (substrate), and a plurality of first strip monomer (elongated element) and a plurality of second strip monomers with second width with first width, its parallel and dissected terrain is formed in this substrate, and has first spacing between this contiguous first strip monomer, and have second spacing between this contiguous second strip monomer, wherein this first spacing is not equal to this second spacing, and this first width is not equal to this second width.Above-mentioned first, second strip monomer also comprises the first strip metal level and the first tectal stack layer and the second strip metal level and the second tectal stack layer.Because above-mentioned polarization structure has the strip monomer of different width dimensions, and arranges setting with different cycles ground, the feasible polarization ratio (PS ratio) and the penetrance (transmittance) thereof that can improve incident light.In addition, according to above-mentioned polarization structure, when relatively large incident angle, still can obtain the when relative higher penetrating rate of higher relatively polarization.
The present invention provides a kind of light-emitting device of launching polarization light in addition.Above-mentioned light-emitting device comprises the light-emitting component with a luminous wave band; And the polarization structure that can be used as the polarized light optical filter (filter) of high penetration, it is arranged at this light-emitting component top, and this polarization structure, comprise a plurality of first strip metal levels and a plurality of second strip metal level, it is parallel and be alternately arranged on this light-emitting component top, and this contiguous first strip metal interlevel has first spacing, and this contiguous second strip metal interlevel has second spacing, and wherein this first spacing is not equal to this second spacing.Because above-mentioned first and second strip metal layer has different width dimensions and unequal spacing, make the polarization penetrance when that can improve light-emitting device.
Description of drawings
Fig. 1 shows a kind of sectional view of light emitting diode;
Fig. 2 A shows the sectional view according to a kind of polarization structure of the embodiment of the invention;
Fig. 2 B shows the top view according to a kind of polarization structure of the embodiment of the invention;
Fig. 2 C shows a kind of sectional view of polarization structure according to another embodiment of the present invention;
Fig. 3 shows that light is incident to the synoptic diagram according to the polarization structure of the embodiment of the invention;
Fig. 4 A-4B shows according to the penetrance of the polarization structure of the embodiment of the invention and the analysis chart of polarization ratio; And
Fig. 5 shows a kind of sectional view of light-emitting device according to another embodiment of the present invention;
Fig. 6 A-6B shows a kind of synoptic diagram of polarization structure according to an embodiment of the invention.
Description of reference numerals
2～substrate, 4～luminescent layer
6～epitaxial loayer, 8～clad
10～light emitting diode, 50～polarization structure
52～substrate, 54～the first strip metal levels
56～the second strip metal levels, 57～the first strip monomers
58～overlayer, 59～the second strip monomers
60～light-emitting device, 62～light-emitting component
64～supporting layer, 66～light transmissive material
Embodiment
Next with embodiment and cooperate graphicly describing the present invention in detail, graphic or describe, similar or same section uses identical symbol.In graphic, the shape of embodiment or thickness can enlarge, to simplify or convenient the sign.The part of element will illustrate with description among the figure.Apprehensiblely be that the element that does not illustrate or describe can be the form that has known to various those skilled in the art.
The present invention is with a kind of polarization structure (light-polarizing structure), and the embodiment that also can be called polaroid (polarizer) as an illustration.Scrutable is that above-mentioned polarization structure can be applicable to various displays certainly, for example LCD (liquid crystal display; LCD), projector or other need the device of polarization light source.
Fig. 2 A shows the sectional view according to a kind of polarization structure 50 of the embodiment of the invention.Shown in Fig. 2 A, at first, provide substrate 52, for example be glass, the silicon dioxide with polycrystalline structure (fusedsilica), hafnia (HfO
2), aluminium oxide (Al
2O
3), zinc paste (ZnO), flexible plastic cement (flexibleplastic) or other suitable transparent substrates.In one embodiment, the refractive index of above-mentioned substrate 52 (refractive index; N) can be between 1～1.78, and the absorptivity of this substrate 52 (K) be 0 or near 0.Scrutablely be, the material of above-mentioned all kinds of substrates is only in order to the concrete mode of implementing of explanation the present invention, is not used for limiting the present invention.In addition, have the transparent base that meets above-mentioned ranges of indices of refraction and absorptivity condition and all can be used as substrate of the present invention.
Then, form a plurality of first strip metal levels (elongated metal layer) 54 and a plurality of second strip metal levels 56 in above-mentioned substrate 52, and the above-mentioned first strip metal level 54 has first width, and the above-mentioned second strip metal level 56 has second width, wherein first width of the first strip metal level 54 is less than second width of the second strip metal level 56, shown in w1 and w2 among Fig. 2 A.
In addition, 54 contiguous of the first strip metal levels have first spacing (distance), shown in the D1 of Fig. 2 A, and 56 contiguous of the second strip metal levels have second spacing, as the D2 of Fig. 2 A, wherein first spacing (D1) of the first strip metal interlevel is greater than second spacing (D2) of the second strip metal interlevel.Moreover, first width (w1) of the above-mentioned first strip metal level 54 and second width (w2) of the second strip metal level 56 and less than first spacing or second spacing.
In one embodiment, form the mode of the above-mentioned first strip metal level 54 and the second strip metal level 56, can be by for example evaporation (evaporating), sputter (sputtering) or other suitable manner, deposit metallic material layer (not shown) for example is that aluminium (Al), gold (Au), silver (Ag) or other suitable metal material and alloy (alloy) thereof are in the top of above-mentioned substrate 52.Then, by the mode of photoetching/etching (photolithographic/etching) or collocation metal-stripping (liftoff), the above-mentioned metal material layer of patterning has the first strip metal level 54 and the second strip metal level 56 of different in width with formation.
Because the spacing and the width of above-mentioned strip metal layer are all nano-scale (nano-scaled), its photolithographicallpatterned can be laser holographic interferometry photoetching (laser holography interference lithography), immersion lithography (immersion lithography), nano-imprint lithography (nano-imprint lithography) or other suitable nanoscale photoetching technique.Yet above-mentioned etched mode can be wet etching (wet-etching) or dry ecthing (dry-etching), for example reactive ion etch (reactive ion etching; RIE) or induced electricity coupling plasma etching (inductive coupled plasma etching; ICP).
In Fig. 2 A, the above-mentioned first strip metal level 54 and the second strip metal level 56 are arranged in the above-mentioned substrate 52 interlaced with each otherly.That is to say that each second strip metal level 56 is positioned at first spacing of 54 of the first adjacent strip metal levels, and each first strip metal level 54 is positioned at second spacing of 56 of the second adjacent strip metal levels.In other words, the per two first adjacent strip metal levels 54 insert and put each second strip metal level 56, and per two neighbours' the second strip metal level 56 also can insert and put each first strip metal level 54.
In addition, the above-mentioned first strip metal level 54 repeats to be arranged at above-mentioned substrate 52 tops with period 1 property ground, and the second strip metal level 56 is with property second round ground, repeat and 54 parallel with the first strip metal level, as to be alternately arranged on substrate 52 top, shown in the p1 and p2 of Fig. 2 A.The above-mentioned period 1 (p1) refers to the distance from arbitrary first strip metal level 54 to its first contiguous strip metal level 54, and refers to the distance from arbitrary second strip metal level 56 to its second contiguous strip metal level 56 second round (p2).It should be noted that the above-mentioned period 1 (p1) can be greater than second round (p2), and period 1 and second round can be all less than 325 nanometers (nm).
In addition, above-mentioned period 1 and second round and operational light wave band have relation, and for example first and second cycle is less than or equal to 1/2nd effect optical wavelength (≤1/2 λ), and first and second cycle is less than or equal to 1/4th effect optical wavelength (≤1/4 λ).In addition, second spacing between first spacing between the first strip monomer and the second strip monomer and aforesaid operations are with the relevant system of optical band.For example, first spacing and second spacing can be to be less than or equal to 1/2nd operational light wave band (≤1/2 λ), and first spacing and second spacing are less than or equal to 1/4th operational light wave band (≤1/4 λ).
First width (W1) of the above-mentioned first strip metal level 54 also can be second width (W2) greater than the second strip metal level 56, and in this embodiment, first spacing (D1) of 54 of Lin Jin first strip metal levels is less than second spacing (D2) of 56 of the second contiguous strip metal levels.In addition, above-mentioned strip metal layer 54 and 56 thickness (referring to the distance of the top surface of metal level to upper surface of substrate) have relation with the luminous wave band (λ) of incident light, and for example strip metal layer 54 and 56 thickness can be 1/4 λ or 1/4 λ integral multiple substantially.
Shown in Fig. 2 A, after forming first and second strip metal layer 54 and 56, form overlayer 58 on the above-mentioned first strip metal level 54 and the second strip metal level 56.In one embodiment, by chemical vapor deposition (chemical vapor deposition; CVD), plasma enhanced chemical vapor deposition (plasma enhanced chemical vapor deposition; PECVD) or other suitable manner, deposit to compliance for example aluminium oxide (Al
2O
3) the transparent dielectric material layer in above-mentioned substrate 52, and cover strip metal level 54 and 56.Then, utilize photoetching/etched mode again, this transparent material layer of patterning is to form overlayer 58 on the first strip metal level 54 and the second strip metal level 56.
The ranges of indices of refraction of above-mentioned overlayer 58 is between 1.33～1.85, and the refractive index of this overlayer 58 can be the refractive index more than or equal to substrate 52, can increase thus from the refraction and diffraction (diffraction) effect of the incident light of substrate 52 incidents, and then reinforcement metal layer plasma effect (plasmoniceffect), to improve the polarization ratio (PS ratio) and the penetrance (transmittance thereof of incident light; Tp).In view of the above, above-mentioned as tectal aluminium oxide only in order to explanation, in order to restriction, as long as the suitable transparent material that its refractive index is not less than the refractive index of substrate should all not can be used to make overlayer.In addition, above-mentioned overlayer 58 also can be used as protective seam, to avoid the metal level oxidation.
For instance, the thickness of overlayer 58 can be identical substantially with the thickness of above-mentioned first, second strip metal layer 54 and 56, and the depth-width ratio of the first strip metal level 54 can be to be about 1.5, and the depth-width ratio of the second strip metal level 56 can be to be about 1.
In addition, the above-mentioned first strip metal level 54 may be defined as the first strip monomer (elongated element) 57 with the stack layer of overlayer 58, and the stack layer of above-mentioned second strip metal level 56 and overlayer 58 also can be defined as the second strip monomer 59.Similarly, the above-mentioned first strip monomer 57 and the second strip monomer 59 are alternately arranged in the substrate 52, and 57 contiguous of the first strip monomers have second spacing of first spacing greater than 59 of the second contiguous strip monomers.It should be noted that the thickness of this strip monomer 57 and 59 and the luminous wave band (λ) of incident light have relation, for example strip monomer 57 and 59 thickness can be about 1/4 λ or 1/4 λ integral multiple.
Fig. 2 B shows the top view of the polarization structure 50 shown in Fig. 2 A.Shown in Fig. 2 B, a plurality of first strip metal levels 54 with first width W 1 are 56 parallel with a plurality of second strip metal levels with second width W 2, be arranged in the substrate 52 alternately, the wherein above-mentioned first strip metal level 54 with period 1 p1 be arranged at substrate 52, and the second strip metal level 56 with second round p2 be arranged in the substrate 52, and period 1 p1 is greater than p2 second round.
Fig. 2 C shows the sectional view of polarization structure 50 according to another embodiment of the present invention.Compared to the embodiment shown in Fig. 2 A, in this embodiment, only form the strip metal layer in substrate, and above the strip metal layer, do not have overlayer.Therefore, the material of similar components and generation type can be same as the previously described embodiments, at this and repeat no more.In Fig. 2 C, form a plurality of first strip metal levels 54 with different in width and the second strip metal level 56 in substrate 52, and first width W 1 of the first strip metal level 54 is less than second width W 2 of the second strip metal level 56.In addition, the above-mentioned first strip metal level 54 is parallel with the second strip metal level 56 and be arranged in this substrate 52 tops alternately, and 54 adjacent of the first strip metal levels have second space D 2 of first space D 1 greater than 56 of the second adjacent strip metal levels.Moreover, the above-mentioned first strip metal level 54 with period 1 p1 be arranged at substrate 52, and the second strip metal level 56 with second round p2 be arranged in the substrate 52, and period 1 p1 is greater than p2 second round.
In addition, above-mentioned period 1 and second round can be with the operational light wave band relation to be arranged, for example first and second cycle is less than or equal to 1/2nd operational light wave band (≤1/2 λ), and first and second cycle is less than or equal to 1/4th operational light wave band (≤1/4 λ).Moreover second spacing between first spacing between the first strip monomer and the second strip monomer and aforesaid operations optical band effect emission wavelength have relation.For example, first spacing and second spacing can be to be equal to or less than 1/2nd effect optical wavelength (≤1/2 λ), and first spacing and second spacing are equal to or less than 1/4th effect optical wavelength (≤1/4 λ).
Fig. 3 shows that light is incident to the synoptic diagram of polarization structure 50 according to an embodiment of the invention.As shown in Figure 3, light L with and normal between the θ angle of angle, be incident on the polarization structure 50.When light L exposed to above-mentioned polarization structure 50, light L can partly be reflected, and partly penetrates, reflected light R as shown in Figure 3 and penetrate light T.In addition, the light of S polarization refers to have the light of the polarization component vertical with the incident light plane, and the light of P polarization refers to have the light with the parallel plane polarization component of incident light.In other words, S polarization light is parallel with above-mentioned strip metal layer, says that P polarization light is vertical with the strip metal layer.
Fig. 4 A and 4B show the penetrance (transmittance according to the polarization structure of the embodiment of the invention; Tp) and the analysis chart of polarization ratio (PS ratio).In Fig. 4 A and 4B, with aluminium and gold as metal level, and cooperate emission wavelength be 460 nanometers light experimental example as an illustration, wherein the curve of star sign is represented the result of aluminium as metal level, and the curve of circle marker is represented the result of Jin Zuowei metal level.Shown in Fig. 4 A, when incident angle θ is 0 (vertical incidence), the experimental example of aluminium and gold all have penetrance, particularly aluminium greater than 0.8 as the penetrance of the polarization structure of metal level more up to more than 0.95.In addition, between 30 ° between 80 ° the time, aluminium all can be kept penetrance greater than 0.8 as the penetrance of the experimental example of metal level in incident angle.That is to say that light is during with relatively large angle incident, still can obtain relative higher penetrating rate according to the polarization structure of the embodiment of the invention.
Shown in Fig. 4 B, the polarization ratio of experimental example is all greater than 3.4 x 10
3As incident angle θ during,, even more and more high polarization ratio is arranged with the experimental example of aluminium as metal level greater than 70 °.That is to say, when wide-angle incident, can make the P polarized light have relative higher penetrating rate according to the polarization structure of the embodiment of the invention, and most S polarized light can be reflected.Therefore, according to the polarization structure of the embodiment of the invention, when bigger incident angle (for example θ〉60 °), still have relative higher penetrating rate and polarization ratio.In addition, because the making step of the polarization structure of the embodiment of the invention is less, therefore, its cost of manufacture and complexity are also relatively low.
But Fig. 5 shows a kind of sectional view of light-emitting device 60 of polarized light-emitting.Though Fig. 5 with the framework of light emitting diode as an illustration.Scrutable is that the inclined to one side sheet light of the embodiment of the invention can certainly be applied to the light-emitting device that other needs polarized light-emitting.
In Fig. 5, the light-emitting component 62 with luminous wave band (λ) is provided, and covers supporting layer 64 in these light-emitting component 62 tops.In one embodiment, above-mentioned luminous wavelength band can be between 300～1300 nanometers (nm).Above-mentioned light-emitting component 62 can be the light source that emission has partial polarization light or complete unpolarizedization light.In one embodiment, above-mentioned light-emitting component 62 can be light emitting diode (light-emitting diode; LED), laser diode (laser diode), semiconductor optical amplifier (semiconductor optical amplifier; SOA), Organic Light Emitting Diode (organiclighting-emitting diode; OLED), alternating-current light emitting diode (AC LED), polymer LED (polymer lighting-emitting diode; PLED) or other suitable light-emitting semiconductor device.
In another embodiment, above-mentioned light-emitting component 62 can comprise the polarization layer (not shown), for example be photonic crystal (photon crystal), grating (grating), quantum dot (elongated quantum dot) or other suitable manner, with the light of radiating portion polarization.
As shown in Figure 5, above-mentioned polarization structure 50 is set on supporting layer 64, the light of being launched with polarization light-emitting component 62.Though show that in Fig. 5 polarization structure is arranged at supporting layer 64.Yet polarization structure 50 can certainly directly be arranged on the light-emitting component 62.In addition, in one embodiment, above-mentioned polarization structure 50 also can be arranged on the light-emitting component that uses the encapsulating material encapsulation, with its emission light of polarization.In this embodiment, above-mentioned encapsulating material can be epoxy resin (epoxy), transparent ceramic material (ceramic) or other suitable encapsulating material.
In addition, though in the light-emitting device 60 that Fig. 5 shows, polarization structure 50 is arranged at the light-emitting area top of light-emitting component 62.Yet the polarization structure 50 of the embodiment of the invention also can be arranged at the position in contrast to above-mentioned light-emitting area, to light-emitting area, and then increases the luminescence efficiency and the polarisation of light ratio thereof of light-emitting device 60 in order to reflected light that polarization is provided.
It should be noted that above-mentioned polarization structure 50 comprises first strip metal level with first width and the second strip metal level with second width.The above-mentioned first strip metal level with period 1 property be arranged on the light-emitting component 62, and the second strip metal level with property second round be arranged at light-emitting component 62, wherein the first strip metal level is more arranged setting alternately with second strip metal.The luminous wave band of above-mentioned period 1 and second round and light-emitting component 62 has relation, for example first and second cycle is less than or equal to 1/2nd luminous wave band (≤1/2 λ), and first and second cycle is less than or equal to 1/4th luminous wave band (≤1/4 λ).
In addition, second spacing of first spacing of the first strip metal interlevel and the second strip metal interlevel and the luminous wave band of above-mentioned light-emitting component 62 have relation.For example, first spacing and second spacing can be to be less than or equal to 1/2nd luminous wave band (≤1/2 λ), and first spacing and second spacing are less than or equal to 1/4th luminous wave band (≤1/4 λ).
Because above-mentioned polarization structure makes light-emitting device can launch the light of polarization.In addition, because polarization structure has the strip metal layer of different size, and the mode with different cycles is arranged alternately, makes light-emitting device to launch to have the light of relative high polarization ratio, and the light that light-emitting component is launched also has relative higher penetrating rate.
Fig. 6 A-6B shows the sectional view of a kind of polarization structure 50 of another embodiment of the present invention.In Fig. 6 A, the first strip metal level 54 with first width W 1 is arranged setting alternately with the second strip metal level 56 with second width W 2.As above-mentioned, 54 contiguous of the first strip metal levels have first space D 1, and 56 contiguous of the second strip metal levels have second space D 2, and light transmissive material 66 is formed between the adjacent first strip metal level 54 and the second strip metal level 56.In one embodiment, after the making of finishing the first strip metal level 54 and the second strip metal level 56, (can consult Fig. 2 C), it for example is that the heavy of silicon dioxide, hafnia, aluminium oxide, zinc paste or other suitable material is laminated in the substrate that compliance forms, then, carry out grinding steps, with remove the part heavy stacked, and formation light transmissive material 66 between first and second adjacent strip metal layer 54 and 56.At last, remove substrate, to finish the making of polarization structure as shown in Figure 6A.Scrutablely be, the material of similar components and method for making can be consulted the explanation of the foregoing description, at this and repeat no more.
Above-mentioned light transmissive material 66 has a refractive index, and it is between 1～1.78.Fig. 6 B shows the top view of polarization structure 50 as shown in Figure 6A.The first strip metal level 54 and the 56 parallel and arrangement settings alternately of the second strip metal level, and above-mentioned light transmissive material 66 is arranged between the adjacent first strip metal level 54 and the second strip metal level 56.That is to say that the first strip metal level 54 that each is adjacent and the second strip metal level 56 insert and put light transmissive material 66.It should be noted that because first space D 1 and be not equal to second space D 2, therefore, above-mentioned light transmissive material 66 also can have different width.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; those skilled in the art without departing from the spirit and scope of the present invention, when can doing a little change and retouching, so protection scope of the present invention defines and is as the criterion when looking accompanying Claim.
Claims (29)
1. polarization structure comprises:
Substrate, it has a refractive index;
A plurality of first strip monomers with first width are formed in this substrate, and have first spacing between this contiguous first strip monomer; And
A plurality of second strip monomers with second width, and dissected terrain parallel with this first strip monomer is formed in this substrate, and has second spacing between this contiguous second strip monomer, wherein this first width is not equal to this second width.
2. polarization structure as claimed in claim 1, wherein respectively this first strip monomer comprises the first strip metal level, and respectively this second strip monomer comprises the second strip metal level.
3. polarization structure as claimed in claim 2, wherein this first and second strip monomer respectively also comprises an overlayer, is arranged at respectively this first and second strip metal layer top respectively.
4. polarization structure as claimed in claim 2, wherein this first metal layer and this second metal level are selected from and comprise the group that gold, aluminium, silver and alloy thereof are formed.
5. polarization structure as claimed in claim 3, wherein this overlayer has the refractive index of refractive index greater than this substrate.
6. polarization structure as claimed in claim 1, wherein the refractive index of this substrate is between 1～1.78.
7. polarization structure as claimed in claim 1, wherein this substrate is selected from the group that the silicon dioxide, aluminium oxide, zinc paste or the plastic cement that comprise glass, hafnia, polycrystalline structure formed.
8. polarization structure as claimed in claim 1, wherein this first width is less than this second width.
9. polarization structure as claimed in claim 1, wherein this first spacing is not equal to this second spacing.
10. polarization structure as claimed in claim 9, wherein this first spacing is greater than this second spacing.
11. polarization structure as claimed in claim 1, wherein this first spacing and this second spacing are all less than 325 nanometers.
12. polarization structure as claimed in claim 1, wherein this first strip monomer was arranged in this substrate with the period 1, and this second strip monomer to be being arranged in second round in this substrate, and should the period 1 greater than this second round.
13. a light-emitting device, it can launch a polarization light, comprises:
Light-emitting component with a luminous wave band; And
Polarization structure is arranged on this light-emitting component, and this polarization structure, comprises:
A plurality of first strip metal levels and a plurality of second strip metal level, it is parallel and be alternately arranged on this light-emitting component top, and this contiguous first strip metal interlevel has first spacing, and this contiguous second strip metal interlevel has second spacing, and wherein this first spacing is not equal to this second spacing.
14. light-emitting device as claimed in claim 13, wherein the light launched of this light-emitting component comprises unpolarizedization or partial polarizationization.
15. light-emitting device as claimed in claim 13, wherein this light-emitting component comprises light emitting diode, electricity is penetrated diode or optical semiconductor multiplying arrangement.
16. light-emitting device as claimed in claim 15, wherein this light-emitting component includes OLED, polymer LED or alternating-current light emitting diode.
17. light-emitting device as claimed in claim 13, wherein the luminous wavelength band of this of this light-emitting component is between 300～1300 nanometers.
18. light-emitting device as claimed in claim 13, wherein this first spacing is greater than this second spacing.
19. light-emitting device as claimed in claim 13, wherein this first spacing and this second spacing all are less than or equal to this luminous wave band of 1/4th.
20. light-emitting device as claimed in claim 13, wherein respectively this first strip metal level has first width, and respectively this second strip metal level has second width, and this first width is not equal to this second width.
21. light-emitting device as claimed in claim 20, wherein respectively this second width of this first width of this first metal layer and this second strip metal level respectively and less than this first spacing or this second spacing.
22. light-emitting device as claimed in claim 13, wherein this first strip metal level was arranged on this light-emitting component with the period 1, and this second strip metal level to be being arranged in second round on this light-emitting component, and this period 1 is not equal to this second round.
23. light-emitting device as claimed in claim 13, wherein this polarization structure also comprises an overlayer, is formed at the top of this first strip metal level and this second strip metal level respectively.
24. light-emitting device as claimed in claim 13, wherein this first spacing or this second spacing are less than this luminous wave band of 1/2.
25. light-emitting device as claimed in claim 13, wherein respectively this first metal layer equals 1/4 this luminous wave band or its integral multiple substantially with this second metal layer thickness respectively.
26. light-emitting device as claimed in claim 23, wherein this overlayer and the stack layer of this first metal layer respectively, and this overlayer equals 1/4 this luminous wave band or its integral multiple substantially with the thickness of the stack layer of this second metal level respectively.
27. light-emitting device as claimed in claim 23 also comprises an encapsulating material, between this light-emitting component and this polarization structure.
28. light-emitting device as claimed in claim 27, wherein this encapsulation material comprises epoxy resin or transparent ceramic material.
29. a polarization structure comprises:
A plurality of first strip monomers with first width, and have first spacing between this contiguous first strip monomer; And
A plurality of second strip monomers with second width, and alternately arrangement parallel with this first strip monomer is provided with, and has second spacing between this contiguous second strip monomer, wherein this first width is greater than this second width; And
Have a refractive index materials, be arranged between this adjacent first strip monomer and this second strip monomer.
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| CNA2007101997402A CN101458356A (en) | 2007-12-12 | 2007-12-12 | Light polarization structure and illuminating device |
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| CNA2007101997402A CN101458356A (en) | 2007-12-12 | 2007-12-12 | Light polarization structure and illuminating device |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105047784A (en) * | 2010-07-13 | 2015-11-11 | 乐金显示有限公司 | Light emitting diode, method of fabricating the same, and liquid crystal display |
| CN105278025A (en) * | 2015-11-11 | 2016-01-27 | 深圳市华星光电技术有限公司 | Quantum dot polarizer |
| CN106324742A (en) * | 2016-10-08 | 2017-01-11 | 深圳市华星光电技术有限公司 | Manufacturing method of metal wire grating polarizer |
| CN107167863A (en) * | 2017-07-07 | 2017-09-15 | 深圳市华星光电技术有限公司 | The preparation method of nanometer wiregrating polaroid |
| US10353239B2 (en) | 2017-07-07 | 2019-07-16 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Method of manufacturing nanowire grid polarizer |
-
2007
- 2007-12-12 CN CNA2007101997402A patent/CN101458356A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105047784A (en) * | 2010-07-13 | 2015-11-11 | 乐金显示有限公司 | Light emitting diode, method of fabricating the same, and liquid crystal display |
| CN105047784B (en) * | 2010-07-13 | 2018-04-27 | 乐金显示有限公司 | Light emitting diode and its manufacture method and the liquid crystal display for including it |
| CN105278025A (en) * | 2015-11-11 | 2016-01-27 | 深圳市华星光电技术有限公司 | Quantum dot polarizer |
| CN105278025B (en) * | 2015-11-11 | 2019-04-30 | 深圳市华星光电技术有限公司 | Quantum dot polaroid |
| CN106324742A (en) * | 2016-10-08 | 2017-01-11 | 深圳市华星光电技术有限公司 | Manufacturing method of metal wire grating polarizer |
| CN107167863A (en) * | 2017-07-07 | 2017-09-15 | 深圳市华星光电技术有限公司 | The preparation method of nanometer wiregrating polaroid |
| US10353239B2 (en) | 2017-07-07 | 2019-07-16 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Method of manufacturing nanowire grid polarizer |
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