CN101447435B - 分栅式闪存的制造方法 - Google Patents
分栅式闪存的制造方法 Download PDFInfo
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- CN101447435B CN101447435B CN200810204359A CN200810204359A CN101447435B CN 101447435 B CN101447435 B CN 101447435B CN 200810204359 A CN200810204359 A CN 200810204359A CN 200810204359 A CN200810204359 A CN 200810204359A CN 101447435 B CN101447435 B CN 101447435B
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- oxide layer
- gate
- layer
- oxide
- flash memory
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- 230000015654 memory Effects 0.000 title claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 18
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 18
- 229920005591 polysilicon Polymers 0.000 claims abstract description 18
- 238000005530 etching Methods 0.000 claims abstract description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 27
- 229910052710 silicon Inorganic materials 0.000 claims description 27
- 239000010703 silicon Substances 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 26
- 238000005229 chemical vapour deposition Methods 0.000 claims description 16
- 238000013459 approach Methods 0.000 claims description 12
- 230000003647 oxidation Effects 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 12
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract description 4
- 230000001590 oxidative effect Effects 0.000 abstract description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 2
- 230000000694 effects Effects 0.000 abstract description 2
- 229910052760 oxygen Inorganic materials 0.000 abstract description 2
- 239000001301 oxygen Substances 0.000 abstract description 2
- 238000000151 deposition Methods 0.000 abstract 4
- 230000005641 tunneling Effects 0.000 abstract 4
- 230000008021 deposition Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 87
- 238000005516 engineering process Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (9)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200810204359A CN101447435B (zh) | 2008-12-10 | 2008-12-10 | 分栅式闪存的制造方法 |
PCT/CN2009/071772 WO2010066126A1 (zh) | 2008-12-10 | 2009-05-13 | 分栅式闪存的制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200810204359A CN101447435B (zh) | 2008-12-10 | 2008-12-10 | 分栅式闪存的制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101447435A CN101447435A (zh) | 2009-06-03 |
CN101447435B true CN101447435B (zh) | 2012-09-19 |
Family
ID=40743007
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200810204359A Active CN101447435B (zh) | 2008-12-10 | 2008-12-10 | 分栅式闪存的制造方法 |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN101447435B (zh) |
WO (1) | WO2010066126A1 (zh) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101447435B (zh) * | 2008-12-10 | 2012-09-19 | 上海宏力半导体制造有限公司 | 分栅式闪存的制造方法 |
CN102005375B (zh) * | 2009-09-02 | 2012-05-30 | 中芯国际集成电路制造(上海)有限公司 | 构造浮栅的方法 |
CN101807548B (zh) * | 2010-02-05 | 2014-10-22 | 上海华虹宏力半导体制造有限公司 | 纳米晶分栅式闪存的制造过程 |
CN102315174B (zh) * | 2011-09-28 | 2016-09-28 | 上海华虹宏力半导体制造有限公司 | 含分离栅结构的sonos闪存存储器及其制作方法、操作方法 |
DK2618180T3 (da) * | 2012-01-23 | 2014-06-23 | Espros Photonics Ag | Sensorindretnig, fremstillingsfremgangsmåde og detekteringsindretning |
CN102593062B (zh) * | 2012-03-09 | 2017-03-08 | 上海华虹宏力半导体制造有限公司 | 分栅式闪存结构制造方法以及分栅式闪存结构 |
CN102637647B (zh) * | 2012-04-25 | 2017-06-09 | 上海华虹宏力半导体制造有限公司 | 闪存的存储单元的形成方法 |
CN102945834B (zh) * | 2012-11-30 | 2017-02-22 | 上海华虹宏力半导体制造有限公司 | 提高分离栅闪存擦除和耐久性性能的方法 |
CN103021952B (zh) * | 2012-12-20 | 2017-02-08 | 上海华虹宏力半导体制造有限公司 | 分栅快闪存储器及其形成方法 |
CN103050446B (zh) * | 2012-12-20 | 2016-12-28 | 上海华虹宏力半导体制造有限公司 | 分栅快闪存储器及其形成方法 |
CN103346126A (zh) * | 2013-06-26 | 2013-10-09 | 上海宏力半导体制造有限公司 | 闪存存储单元的形成方法 |
CN103367261B (zh) * | 2013-07-24 | 2016-04-06 | 上海华虹宏力半导体制造有限公司 | 半导体结构的形成方法 |
CN104091786A (zh) * | 2014-07-23 | 2014-10-08 | 上海华虹宏力半导体制造有限公司 | 闪存存储器的形成方法 |
CN105470202B (zh) * | 2014-09-12 | 2018-03-30 | 上海华虹宏力半导体制造有限公司 | 分栅快闪存储器浮栅尖端的制造方法 |
CN104538367B (zh) * | 2014-12-30 | 2017-12-08 | 上海华虹宏力半导体制造有限公司 | 镜像分栅快闪存储器及其形成方法 |
CN104465664A (zh) * | 2014-12-30 | 2015-03-25 | 上海华虹宏力半导体制造有限公司 | 分栅式闪存及其制作方法 |
WO2019000416A1 (zh) * | 2017-06-30 | 2019-01-03 | 华为技术有限公司 | 一种隧穿场效应晶体管及其制备方法 |
CN111613619A (zh) * | 2020-06-11 | 2020-09-01 | 上海华虹宏力半导体制造有限公司 | 分栅快闪存储器的制作方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5422292A (en) * | 1994-09-30 | 1995-06-06 | United Microelectronics Corp. | Process for fabricating split gate flash EEPROM memory |
CN1438694A (zh) * | 2002-02-10 | 2003-08-27 | 台湾积体电路制造股份有限公司 | 分离栅极式快速存储器的制造方法及结构 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10173075A (ja) * | 1996-12-05 | 1998-06-26 | Sanyo Electric Co Ltd | 半導体装置の製造方法及び半導体記憶装置の製造方法 |
CN1228834C (zh) * | 2002-04-08 | 2005-11-23 | 台湾积体电路制造股份有限公司 | 使用源极沟渠的分离栅极式快闪存储器元件制作方法 |
CN1287458C (zh) * | 2003-04-29 | 2006-11-29 | 力晶半导体股份有限公司 | 分离栅极闪存单元及其制造方法 |
CN101447435B (zh) * | 2008-12-10 | 2012-09-19 | 上海宏力半导体制造有限公司 | 分栅式闪存的制造方法 |
-
2008
- 2008-12-10 CN CN200810204359A patent/CN101447435B/zh active Active
-
2009
- 2009-05-13 WO PCT/CN2009/071772 patent/WO2010066126A1/zh active Application Filing
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5422292A (en) * | 1994-09-30 | 1995-06-06 | United Microelectronics Corp. | Process for fabricating split gate flash EEPROM memory |
CN1438694A (zh) * | 2002-02-10 | 2003-08-27 | 台湾积体电路制造股份有限公司 | 分离栅极式快速存储器的制造方法及结构 |
Non-Patent Citations (1)
Title |
---|
JP特开平10-173075A 1998.06.26 |
Also Published As
Publication number | Publication date |
---|---|
WO2010066126A1 (zh) | 2010-06-17 |
CN101447435A (zh) | 2009-06-03 |
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PB01 | Publication | ||
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI Effective date: 20140514 |
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Effective date of registration: 20140514 Address after: 201203 Shanghai Zhangjiang hi tech park Zuchongzhi Road No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201203 Shanghai Guo Shou Jing Road, Zhangjiang hi tech Park No. 818 Patentee before: Hongli Semiconductor Manufacture Co., Ltd., Shanghai |