CN101445918A - Apparatus for depositting atomic layer - Google Patents

Apparatus for depositting atomic layer Download PDF

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Publication number
CN101445918A
CN101445918A CNA2008101815786A CN200810181578A CN101445918A CN 101445918 A CN101445918 A CN 101445918A CN A2008101815786 A CNA2008101815786 A CN A2008101815786A CN 200810181578 A CN200810181578 A CN 200810181578A CN 101445918 A CN101445918 A CN 101445918A
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China
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mentioned
gas
source gas
air knife
atomic layer
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Granted
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CNA2008101815786A
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CN101445918B (en
Inventor
申寅澈
成明恩
田英洙
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Kc Ltd By Share Ltd
KCTech Co Ltd
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KC Tech Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4558—Perforated rings
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The present invention provides an apparatus for depositting an atomic layer, capable of providing various source gas simultaneously to implement a deposition film process to a plurality of substrates simultaneously in a processing chamber. The apparatus includes a spray head for inclinedly spraying sweeping gas to the substrates to separate and supply various source gas. At least one of the spray head and a base may rotate relative to the other, and the spray head may be provided with a plurality of spray regions for providing source gas. Along the rotation of the spray head or the base, deposition films may be formed on the substrate passing through the regions of the source gas in turn. Thus, it is capable of improving efficiency, treatment speed and film quality of the film deposition process.

Description

A kind of apparatus for atomic layer deposition
Technical field
The invention provides a kind of apparatus for atomic layer deposition, more particularly, provide a kind of apparatus for atomic layer deposition that is used for preventing different source gas intermingling and can improves depositing of thin film efficient.
Background technology
Recently the integrated level along with semiconductor unit becomes more and more higher in semiconducter engineering, and the requirement of microfabrication is also become more and more.For form fine pattern and can be on a chip highly integrated a plurality of unit, need exploitation to have the novel substance that the little film of thickness and high electric Jie lead.Especially, when the ladder on substrate is formed, guarantee that the step coverage (step coverage) of covering surfaces and the interior homogeneity (within wafer uniformity) of wafer are very crucial.In order to satisfy above-mentioned requirements, the Atomic layer deposition method (ALD:atomic layerdeposition) that forms the film with the fine thickness of atomic shell unit is employed and develops.
ALD technology is the chemisorption (chemisorption) that taken place of the surperficial saturated reaction (surfacesaturated reaction) of a kind of utilization reactant on substrate surface and desorption (desorption) and form the method for monoatomic layer, and ALD technology also is a kind of membrane deposition method that can control the atomic shell horizontal breadth.
The interior homogeneity of step coverage and wafer can be determined by a plurality of factor in the existing ALD process, but wherein tightr with the shape relation of shower nozzle.
In the ALD process, the sweeping gas (PG:purge gas) that flows into multiple source gas (source gas) and flow into as rare gas element between the gas of above-mentioned multiple source can prevent the mixing of source gas under gaseous state by rotating.A provenance gas by the state of chemisorption at substrate surface under, another provenance gas along with the reaction can on the surface of substrate, form an atomic shell.With the said process be one-period repeat said process when forming needed film thickness till.
In addition, other surface reactions of source gas need by till containment is when having formed an atomic shell by chemisorption on substrate surface and chemical reaction.
Yet, even in existing ALD process by providing sweeping gas to come the indoor residue source gas of purifying treatment, still have a spot of source gas and remain in the above-mentioned treatment chamber, above-mentioned residue source gas and other source gas intermingling will produce the particle as source of pollution.
Therefore, maybe can carry out and a kind ofly since identical source gas is provided to above-mentioned entire treatment chamber interior, a plurality of substrates carried out identical film deposition process, maybe can carry out and a kind ofly form a plurality of jeting areas of spraying homology gas not and the method by above-mentioned substrate in order in gas jet zone, above-mentioned source in above-mentioned inner treatment chamber, promptly pass through above-mentioned jeting area in order, source gas and above-mentioned substrate in the above-mentioned jeting area are reacted in order with deposit film on substrate by above-mentioned substrate.
But be difficult to separate fully each zone of above-mentioned source gas jet and the zone on next door thereof this moment, and the not homology gas by gas jet zone iimit, source can flow into and intermingling together.In case source gas intermingling is by producing the particle as by product behind the chemical reaction.Above-mentioned particle can become source of pollution in deposition process, because it is comprised on the above-mentioned substrate in the sedimentary film, therefore can influence and worsen the quality of film.
Summary of the invention
In order to solve above-mentioned prior art problems, the invention provides and a kind ofly in by the formed apparatus for atomic layer deposition of jeting area that sprays homology gas not, can separate the apparatus for atomic layer deposition of above-mentioned jeting area by preventing above-mentioned injected source gas intermingling.
And, the invention provides a kind of can preventing because the intermingling of homology gas and generation can cause the apparatus for atomic layer deposition of the particle that film quality worsens not.
Apparatus for atomic layer deposition according to the embodiment of the invention comprises: can hold the treatment chamber that a plurality of substrates carry out deposition process; Support the pedestal of above-mentioned substrate; And shower nozzle.Wherein, above-mentioned shower nozzle comprises: a plurality of injection units of different source gas jets being given above-mentioned substrate; The deflated exhaust unit that discharge produces from above-mentioned substrate; With the air knife that sweeping gas is ejected into obliquely above-mentioned substrate, by the gas that above-mentioned air knife sprays, the different inter gas that sprays at above-mentioned injection unit forms gas curtain.
According to embodiments of the invention, provide a kind of and supplied the not shower nozzle in the zone of homology gas by being predetermined angle separation energy since substrate sprays.More particularly, at least one in shower nozzle or the pedestal can be rotated with respect to the other side, and forms a plurality of jeting areas that each source gas is provided in above-mentioned shower nozzle.Along with the rotation of above-mentioned shower nozzle or said base, above-mentioned substrate pass through in order the injected zone of above-mentioned source gas can be on substrate deposit film.
In an embodiment of the present invention, air knife (air knife) not only can be used for separating gas jet zone, above-mentioned source, can also be at above-mentioned substrate through providing sweeping gas to be used for purifying unreacted source gas on substrate in the border of above-mentioned separated region.
In addition, above-mentioned air knife can separate gas jet zone, above-mentioned source effectively, and above-mentioned sweeping gas is the surface that predetermined angle is ejected into above-mentioned substrate obliquely.Along the above-mentioned injection unit of configuration of radially rotating of above-mentioned shower nozzle, and on the border of above-mentioned injection unit, dispose above-mentioned air knife.Specifically, first injection unit of the first source gas is provided and formations of being rotated of second injection unit of the second source gas is provided, and on the border of above-mentioned injection unit, form at least one exhaust unit and at least one air knife.
In an embodiment, in order to improve the separating effect in gas jet zone, above-mentioned source, can dispose a plurality of above-mentioned exhaust units in the both sides of above-mentioned air knife.Wherein, a plurality of venting holes of above-mentioned exhaust unit are formed on the both sides of above-mentioned air knife, by discharging the exhaust that contains unreacted source gas by the formed floating pressure in the space of above-mentioned air knife separation.
Description of drawings
Fig. 1 is the sectional view that illustrates according to the apparatus for atomic layer deposition of the embodiment of the invention;
Fig. 2 is the skeleton view that shower nozzle shown in Figure 1 is shown;
Fig. 3 is the decomposition diagram that shower nozzle shown in Figure 2 is shown;
Fig. 4 is the underside perspective view that second plate shown in Figure 2 is shown;
Fig. 5 is the diagrammatic sketch that shower nozzle action shown in Figure 2 is shown.
Embodiment
Certain exemplary embodiments of the present invention will be described in detail in conjunction with the accompanying drawings.But the present invention has more than and is confined to the foregoing description.
Fig. 1 is the sectional view that illustrates according to the apparatus for atomic layer deposition of the embodiment of the invention.
To the apparatus for atomic layer deposition according to the embodiment of the invention be described in conjunction with Fig. 1.Reference diagram, apparatus for atomic layer deposition comprise treatment chamber 10, pedestal (susceptor) 20 and shower nozzle 100.
Treatment chamber 10 accommodating substrates 1, and the space of carrying out atomic layer deposition process is provided to substrate 1.For example, treatment chamber 10 can have with pedestal 20 corresponding shapes and can center on pedestal 20.
Wherein, substrate 1 can be the silicon wafer as semiconducter substrate.But the present invention is not confined to this embodiment, and substrate 1 also can be the glass substrate that is used for flat-panel monitors such as LCD, PDP.The shape of substrate 1 and size are not subjected to the restriction of embodiment in the diagrammatic sketch, can have multiple shape and sizes such as circular and square.
Pedestal 20 is used for fixing substrate 1.In order to enhance productivity, pedestal 20 can be used in half batch of (semi batch) type apparatus for atomic layer deposition handling a plurality of substrates simultaneously.
At this moment, in the process of deposition and atomic layer, carry out in the thin film deposition processes of one-period,, need repeat deposition cycle hundreds of times in order to form film with expectation thickness because the thickness of sedimentary film is too thin on substrate 1.Yet, when utilizing half batch of type apparatus for atomic layer deposition, can carry out deposition process simultaneously, thereby can improve turnout (throughput) a plurality of substrates.
Pedestal 20 supports the surface of the substrate 1 of thin film deposition that it is upwards exposed, and pedestal 20 has and substrate arrangement shape at grade.For example, pedestal 20 can be circle, six substrates 1 along the circumference of pedestal by radial arrangement.
Shower nozzle 100 is configured in the top of substrate 1, sprays multiple source gas S1, S2 and the sweeping gas PG of the film that is used for forming substrate 1 to substrate 1.Shower nozzle 100 comprises the air knife 150 in the zone of separation injection source gas S1, S2.
The top of shower nozzle 100 links to each other with the sweeping gas supply line 55 that sweeping gas PG is provided with the source gas supply line 51,53 that source gas S1, S2 are provided.
The central inner of shower nozzle 100 comprises the exhaust unit 130 of discharging the exhaust VA in the treatment chamber 10, and exhaust unit 130 is with deflated gas relief line 57 links to each other by providing negative pressure to suck VA in exhaust unit 130.The item that relates to exhaust unit 130 will describe subsequently.
Atomic layer deposition process will comprise that a plurality of not homology gas with film forming raw material thing offer substrate 1, form film by chemical reaction.To be as the criterion with the apparatus for atomic layer deposition that uses two kinds of different types of source gas S1, S2 and a kind of sweeping gas PG in the following embodiments and be described in detail.
Fig. 2 is the skeleton view that illustrates according to the shower nozzle 100 of the embodiment of the invention, and Fig. 3 is the decomposition diagram that described shower nozzle is shown, and Fig. 4 is the underside perspective view that described shower nozzle 100 is shown, and Fig. 5 is the diagrammatic sketch that described shower nozzle 100 actions are shown.
Referring to figs. 1 to Fig. 5 shower nozzle 100 is described in detail.
Shower nozzle 100 has and pedestal 20 corresponding forms, and it is configured in the top of substrate 1 and gives substrate 1 with the source gas jet.Shower nozzle 100 comprises air knife 150, and wherein, air knife 150 sprays sweeping gas PG, is used for separating the zone of being sprayed by the first source gas S1 and the second source gas S2.
Wherein, above-mentioned source gas S1, S2 are different and different according to the kind of the kind of substrate 1 and deposit film thereof.For example, the first source gas S1 is a kind of gas selected from the gas that comprises aluminium Al, silicon Si, titanium Ti, gallium Ga, germanium Ge etc. or the mixture of at least two kinds of gases.The second source gas S2 comprises the gas that constitutes the another kind of material of film with the first source gas S1 chemical reaction.Such as the second source gas S2 can be oxygen (O 2) or steam (H 2O).
Sweeping gas PG is used for the by product that purifies unreacted source gas S1, S2 and produce in deposition process, above-mentioned sweeping gas PG can use the rare gas element that does not carry out chemical reaction with source gas S1, S2, for example argon Ar or nitrogen N 2
Shower nozzle 100 not only comprises first injection unit 101 that sprays the first source gas S1 and second injection unit 102 that sprays the second source gas S2, also comprise the air knife 150 that separates above-mentioned first injection unit 101 and second injection unit 102, so that above-mentioned first injection unit 101 and second injection unit 102 mutually noninterfere each other.Such as, first injection unit 101 and second injection unit 102 along shower nozzle 100 by radial arrangement, and first injection unit 101 and second injection unit 102 formation of being rotated.The air knife 150 of sweeping gas PG is sprayed in configuration between above-mentioned first injection unit 101 and second injection unit 102.
Below first injection unit 101 be meant the zone that the jet hole 121 of the zone that the hole, first source 111 of first plate 110 is formed and second plate 120 is formed, and second injection unit 102 is meant first second zone that is formed in conjunction with pilot unit 122 in conjunction with the pilot unit 112 and second plate 120 of the zone that the hole, second source 113 of first plate 110 is formed and first plate 110.
Specifically, shower nozzle 100 is made up of first plate 110 that can interosculate and second plate 120.Exhaust unit 130 is installed at center at shower nozzle 100.
In first plate 110, form a plurality of holes of inflow source gas S1, S2 and sweeping gas PG.In detail, in first plate 110, form hole, a plurality of first source 111 of spraying the first source gas S1 and the hole, a plurality of second source 113 of spraying the second source gas S2.And a plurality of clear opening 115 that flow into sweeping gas PG are formed.
Second plate 120 has the shape that can interosculate with first plate 110.Such as first plate 110 and second plate 120 can be for being combined into the circular slab of a disc-shape.
In second plate 120, form and be used for the first source gas S1 is sprayed to substrate 1 and a plurality of jet holes 121 that communicate with hole, first source 111.
In first plate 110, form recess, promptly be called first in conjunction with pilot unit 112, and form hole, second source 113 at first the medial surface in conjunction with pilot unit 112 with predetermined depth.That is, first in conjunction with pilot unit 112 by hole 113, second source to the substrate 1 direct injection second source gas S2.First internal space in conjunction with pilot unit 112 plays the shock absorption of the second source gas S2 that holds predetermined amount.
In second plate 120, have can receive first in conjunction with pilot unit 112 second in conjunction with pilot unit 122.Such as, second in conjunction with pilot unit 122 can be can insert first in conjunction with pilot unit 112, break-through second plate 120 formed openings.That is, first in conjunction with pilot unit 112 by being received in conjunction with pilot unit 122 by second, first plate 110 and second plate 120 are combined with each other.
Below shower nozzle 100, comprise the air knife 150 that separates first injection unit 101 and second injection unit 102.In treatment chamber 10, form the exhaust unit 130 of discharging unreacted exhaust VA.
Wherein, in exhaust unit 130, form a plurality of venting holes 131 of deflated of discharging in the treatment chamber 10.
Air knife 150 can form gas curtain by spraying predetermined gas between above-mentioned first injection unit 101 and second injection unit 102 between above-mentioned first injection unit 101 and second injection unit 102.Therefore, be that the boundary separates first injection unit 101 and second injection unit 102 with air knife 150, can prevent the gasiform first source gas S1 and the second source gas S2 intermingling effectively.
Air knife 150 preferably uses the stabilizing gas that does not carry out chemical reaction with the first source gas S1 and the second source gas S2.Such as air knife 150 uses sweeping gas PG.Air knife 150 not only can prevent the first source gas S1 and the second source gas S2 intermingling, can also play a part to purify unreacted source gas S1, S2 in the deposit film process.
Specifically, air knife 150 communicates with purging pore (purge hole) 115 and forms, and sweeping gas PG can be predetermined angle and be ejected into substrate 1 obliquely.And, air knife 150 be formed on substrate 1 above, press pre-determined direction source gas S1, S2 released.Because the spray angle of sweeping gas PG need be tilted with a predetermined angle and a substrate 1, therefore, preferably air knife 150 is formed on the surface of second plate 120 highlightedly with predetermined height.
And the direction of the spray angle of the above-mentioned sweeping gas of air knife 150 is sprayed sweeping gas mutually on the contrary with the travel direction of substrate 1.Being used for the air knife 150 of separation source gas S1, S2 radially is configured longly along shower nozzle 100.
Air knife 150 has can be used for spraying effectively the nozzle form of sweeping gas PG.Such as air knife 150 can be radially to be configured in a plurality of holes on slit (slit) or the straight line along shower nozzle.Therefore, even the end of air knife 150 also can be separated the first source gas S1 and the second source gas S2 effectively.
Yet the shape of air knife 150 has more than and is confined to above-mentioned shape and it in fact can be for having the multiple shape of a plurality of holes, nozzle or slit etc.
In shower nozzle 100, form the exhaust unit 130 that to discharge the exhaust VA in the treatment chamber 10 in the heart.Exhaust unit 130 is absorbed in the exhaust VA that takes place in the deposition process and it is discharged to the outside of treatment chamber 10 by form negative pressure in treatment chamber 10.And exhaust unit 130 can separate above-mentioned first injection unit 101 and second injection unit 102 together with air knife 150, and can discharge the exhaust that produces in by air knife 150 separate areas.
Specifically, in exhaust unit 130, form a plurality of first venting holes 131.In second plate 120, have and a plurality of second venting holes 153 of having discharged the exhaust VA in the treatment chamber 10 since treatment chamber 10 communicates.And, in second plate 120, comprise the exhaust pilot unit 123 that connects first venting hole 131 and second venting hole 153.
Second venting hole 153 is configured in by in air knife 150 separate areas.Especially, thus second venting hole 153 is configured in the mixing that can prevent the first source gas S1 and the second source gas S2 on the border between first injection unit 101 and second injection unit 102.For example, second venting hole 153 is configured in the both sides of air knife 150.Be that a pair of second venting hole 153 and an air knife 150 form the zone of supplying source gas S1, a S2.In each above-mentioned separate areas, only supply a provenance gas S1, S2.
Shower nozzle 100 or pedestal 20 are with respect to being rotated.That is, the mode by passing through injection source gas S1, S2 zone in order from shower nozzle 100 injection source gas S1, S2 and substrate 1 can form film on substrate 1.
In shower nozzle 100 and the pedestal 20 at least one is rotatable form.Shower nozzle 100 comprises the first driver element (not shown) that motivating force is provided, and pedestal 20 comprises the second driver element (not shown) that motivating force is provided.
Yet the present invention is not limited to the mode of the rotation shown in shower nozzle 100 and the pedestal 20.
With reference to figure 5, in deposition process according to an embodiment of the invention, in shower nozzle 100, form four first injection unit 101 and four second injection units 102 that the second source gas S2 is provided that the first source gas S1 is provided.The formation of being rotated of first injection unit 101 and above-mentioned second injection unit 102.
Because rotation, substrate 1 can pass through first injection unit 101 and second injection unit 102 according to priority.Between by first injection unit 101 and second injection unit 102, in the border, utilize the sweeping gas PG that sprays from air knife 150 can remove substrate 1 lip-deep source gas S1, the S2 that under unreacted state, adheres to.
Promptly, can spray the first source gas S1, sweeping gas PG, second source gas S2 and the sweeping gas PG according to priority to substrate 1 along with the rotation of shower nozzle 100 or pedestal 20.And, by second venting hole 153 can discharge respectively with the exhaust of first injection unit 101 and second injection unit, 102 corresponding region generating.
So, can in a treatment chamber 10, separate the zone that the first source gas S1 and the second source gas S2 are provided, and can in a treatment chamber 10, carry out atomic layer deposition process simultaneously through the zone of injection source gas S1, S2 in order by substrate 1.
According to the apparatus for atomic layer deposition of the embodiment of the invention, the first, the gas curtain (air curtain) by forming sweeping gas can be in treatment chamber the jeting area of separation injection source gas.And can prevent because of above-mentioned source gas mixes the generation of the particle that chemical reaction causes that generates under gaseous state, thereby can prevent that the film quality that causes because of particle from worsening; Second, owing to each separated formation in gas jet zone, source in treatment chamber, by above-mentioned substrate can be carried out film deposition process through above-mentioned jeting area in order, therefore, can reduce the source turbine for supply and the time that purifies and the time of all processes, thereby enhance productivity.
Although shown and described the present invention with reference to its certain exemplary embodiments, but it should be appreciated by those skilled in the art, or else break away under the situation by the spirit and scope of the present invention of claim definition, can carry out various changes on form and the details it.Therefore, those skilled in the art can carry out variations and modifications based on principle of the present invention within the scope of the invention.

Claims (7)

1, a kind of apparatus for atomic layer deposition, it comprises:
Can hold a plurality of substrates and carry out the treatment chamber of deposition process;
Support the pedestal of above-mentioned substrate; With
Shower nozzle;
Wherein, above-mentioned shower nozzle comprises
Different source gas jets is given a plurality of injection units of above-mentioned substrate;
The deflated exhaust unit that discharge produces from above-mentioned substrate; With
Sweeping gas is ejected into the air knife of above-mentioned substrate obliquely, and wherein, by the gas that above-mentioned air knife sprays, the different inter gas that sprays at above-mentioned injection unit forms gas curtain.
2, apparatus for atomic layer deposition as claimed in claim 1, wherein, above-mentioned air knife provides the sweeping gas that purifies above-mentioned source gas.
3, apparatus for atomic layer deposition as claimed in claim 1, wherein, the above-mentioned a plurality of injection units of configuration of in above-mentioned shower nozzle, radially rotating, and between above-mentioned each injection unit, dispose above-mentioned air knife.
4, apparatus for atomic layer deposition as claimed in claim 3 wherein, disposes above-mentioned exhaust unit in the both sides of above-mentioned air knife.
5, apparatus for atomic layer deposition as claimed in claim 3, wherein, second injection unit that sprays first injection unit of the first source gas and spray the second source gas along above-mentioned shower nozzle is by the configuration of radially rotating, and on the border of above-mentioned each injection unit at least one air knife of configuration and at least one exhaust unit.
6, apparatus for atomic layer deposition as claimed in claim 4, wherein, above-mentioned exhaust unit is discharged by the exhaust in the space of above-mentioned air knife separation.
7, apparatus for atomic layer deposition as claimed in claim 1, wherein, at least one in above-mentioned shower nozzle and the said base can be rotated with respect to the other side.
CN2008101815786A 2007-11-28 2008-11-27 Apparatus for depositting atomic layer Active CN101445918B (en)

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Application Number Priority Date Filing Date Title
KR1020070122358A KR100949914B1 (en) 2007-11-28 2007-11-28 Atomic layer deposition apparatus
KR1020070122358 2007-11-28
KR10-2007-0122358 2007-11-28

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CN101445918A true CN101445918A (en) 2009-06-03
CN101445918B CN101445918B (en) 2012-09-05

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Cited By (7)

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