CN101442038B - 电容器及显示器件 - Google Patents
电容器及显示器件 Download PDFInfo
- Publication number
- CN101442038B CN101442038B CN2008101859981A CN200810185998A CN101442038B CN 101442038 B CN101442038 B CN 101442038B CN 2008101859981 A CN2008101859981 A CN 2008101859981A CN 200810185998 A CN200810185998 A CN 200810185998A CN 101442038 B CN101442038 B CN 101442038B
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- layer
- capacitor
- conductive layer
- electrode
- transistor
- Prior art date
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- 239000003990 capacitor Substances 0.000 title claims abstract description 150
- 239000004065 semiconductor Substances 0.000 claims abstract description 15
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 66
- 229920005591 polysilicon Polymers 0.000 claims description 66
- 239000002184 metal Substances 0.000 claims description 12
- 230000005540 biological transmission Effects 0.000 claims description 11
- 239000012535 impurity Substances 0.000 claims description 7
- 239000010410 layer Substances 0.000 description 162
- 239000011229 interlayer Substances 0.000 description 17
- 238000005401 electroluminescence Methods 0.000 description 15
- 238000000034 method Methods 0.000 description 13
- 239000011159 matrix material Substances 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- 239000011248 coating agent Substances 0.000 description 9
- 238000000576 coating method Methods 0.000 description 9
- 230000004044 response Effects 0.000 description 9
- 230000008878 coupling Effects 0.000 description 6
- 238000010168 coupling process Methods 0.000 description 6
- 238000005859 coupling reaction Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000010408 film Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 210000002858 crystal cell Anatomy 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000012044 organic layer Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 244000287680 Garcinia dulcis Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
- Y02B20/30—Semiconductor lamps, e.g. solid state lamps [SSL] light emitting diodes [LED] or organic LED [OLED]
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
Claims (4)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR36854/04 | 2004-05-24 | ||
KR1020040036854A KR100589375B1 (ko) | 2004-05-24 | 2004-05-24 | 커패시터 및 이를 이용하는 발광 표시 장치 |
KR37277/04 | 2004-05-25 | ||
KR1020040037277A KR100627284B1 (ko) | 2004-05-25 | 2004-05-25 | 유기전계 발광 표시 패널 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005100738149A Division CN100521007C (zh) | 2004-05-24 | 2005-05-24 | 电容器及使用该电容器的发光显示器 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101442038A CN101442038A (zh) | 2009-05-27 |
CN101442038B true CN101442038B (zh) | 2010-10-27 |
Family
ID=35822190
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008101859981A Active CN101442038B (zh) | 2004-05-24 | 2005-05-24 | 电容器及显示器件 |
CNB2005100738149A Active CN100521007C (zh) | 2004-05-24 | 2005-05-24 | 电容器及使用该电容器的发光显示器 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005100738149A Active CN100521007C (zh) | 2004-05-24 | 2005-05-24 | 电容器及使用该电容器的发光显示器 |
Country Status (2)
Country | Link |
---|---|
KR (1) | KR100589375B1 (zh) |
CN (2) | CN101442038B (zh) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100684176B1 (ko) | 2004-12-16 | 2007-02-20 | 한국전자통신연구원 | 저온 능동 구동 표시 소자 및 그 제조 방법 |
KR101322139B1 (ko) * | 2006-11-27 | 2013-10-25 | 엘지디스플레이 주식회사 | 유기전계발광소자 및 이의 화소 구조 |
KR100823199B1 (ko) * | 2007-04-05 | 2008-04-18 | 삼성에스디아이 주식회사 | 유기 발광 표시 장치 |
CN104157676B (zh) * | 2009-11-27 | 2017-04-12 | 株式会社日本有机雷特显示器 | 发光显示装置 |
KR101034679B1 (ko) | 2009-12-21 | 2011-05-16 | 삼성모바일디스플레이주식회사 | 화소 및 이를 구비한 유기전계발광 표시장치 |
JP6199056B2 (ja) | 2013-03-22 | 2017-09-20 | 株式会社ジャパンディスプレイ | 有機エレクトロルミネッセンス表示装置 |
KR102117614B1 (ko) * | 2013-10-18 | 2020-06-02 | 삼성디스플레이 주식회사 | 박막트랜지스터 기판 및 기판의 신호선 리페어 방법 |
CN104733493B (zh) * | 2013-12-23 | 2019-01-04 | 昆山工研院新型平板显示技术中心有限公司 | 一种像素电路和驱动方法及其应用 |
JP6169005B2 (ja) * | 2014-01-17 | 2017-07-26 | 株式会社ジャパンディスプレイ | 発光素子表示装置 |
KR102382026B1 (ko) * | 2015-01-19 | 2022-04-04 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
KR102620013B1 (ko) * | 2016-07-01 | 2024-01-02 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조방법 |
KR102591549B1 (ko) * | 2016-10-19 | 2023-10-20 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
KR20180099976A (ko) | 2017-02-27 | 2018-09-06 | 삼성디스플레이 주식회사 | 표시 장치 |
KR102578163B1 (ko) * | 2017-12-28 | 2023-09-12 | 엘지디스플레이 주식회사 | 유기발광표시장치 및 그의 제조방법 |
CN109585516B (zh) * | 2018-12-13 | 2021-02-23 | 武汉华星光电半导体显示技术有限公司 | 一种tft驱动背板 |
KR20200081968A (ko) * | 2018-12-28 | 2020-07-08 | 엘지디스플레이 주식회사 | 발광 표시장치 |
WO2021120166A1 (zh) * | 2019-12-20 | 2021-06-24 | 京东方科技集团股份有限公司 | 显示基板及其制作方法、和显示装置 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1417863A (zh) * | 2001-08-06 | 2003-05-14 | 三星Sdi株式会社 | 平板显示器及其制造方法 |
CN1457220A (zh) * | 2002-06-03 | 2003-11-19 | Lg.菲利浦Lcd株式会社 | 有源矩阵型有机电致发光显示装置及其制造方法 |
-
2004
- 2004-05-24 KR KR1020040036854A patent/KR100589375B1/ko active IP Right Grant
-
2005
- 2005-05-24 CN CN2008101859981A patent/CN101442038B/zh active Active
- 2005-05-24 CN CNB2005100738149A patent/CN100521007C/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1417863A (zh) * | 2001-08-06 | 2003-05-14 | 三星Sdi株式会社 | 平板显示器及其制造方法 |
CN1457220A (zh) * | 2002-06-03 | 2003-11-19 | Lg.菲利浦Lcd株式会社 | 有源矩阵型有机电致发光显示装置及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN101442038A (zh) | 2009-05-27 |
KR20050111922A (ko) | 2005-11-29 |
KR100589375B1 (ko) | 2006-06-14 |
CN1716479A (zh) | 2006-01-04 |
CN100521007C (zh) | 2009-07-29 |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: SAMSUNG MOBILE DISPLAY CO., LTD. Free format text: FORMER OWNER: SAMSUNG SDI CO., LTD. Effective date: 20100108 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20100108 Address after: Gyeonggi Do, South Korea Applicant after: Samsung Mobile Display Co., Ltd. Address before: Gyeonggi Do, South Korea Applicant before: Samsung SDI Co., Ltd. |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SAMSUNG DISPLAY CO., LTD. Free format text: FORMER OWNER: SAMSUNG MOBILE DISPLAY CO., LTD. Effective date: 20121018 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20121018 Address after: Gyeonggi Do, South Korea Patentee after: Samsung Display Co., Ltd. Address before: Gyeonggi Do, South Korea Patentee before: Samsung Mobile Display Co., Ltd. |