CN101438389A - Cmos晶体管栅极中的凹入功函数金属 - Google Patents
Cmos晶体管栅极中的凹入功函数金属 Download PDFInfo
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 115
- 239000002184 metal Substances 0.000 title claims abstract description 115
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 238000005530 etching Methods 0.000 claims abstract description 25
- 238000000151 deposition Methods 0.000 claims abstract description 22
- 239000000463 material Substances 0.000 claims description 58
- 238000000034 method Methods 0.000 claims description 41
- 239000000203 mixture Substances 0.000 claims description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 13
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 10
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- 239000004411 aluminium Substances 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 7
- 239000012153 distilled water Substances 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical group OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 6
- 229910044991 metal oxide Inorganic materials 0.000 claims description 6
- 150000004706 metal oxides Chemical class 0.000 claims description 6
- 229910017604 nitric acid Inorganic materials 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid group Chemical group S(O)(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 5
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- OTCHGXYCWNXDOA-UHFFFAOYSA-N [C].[Zr] Chemical compound [C].[Zr] OTCHGXYCWNXDOA-UHFFFAOYSA-N 0.000 claims description 5
- TWHBEKGYWPPYQL-UHFFFAOYSA-N aluminium carbide Chemical compound [C-4].[C-4].[C-4].[Al+3].[Al+3].[Al+3].[Al+3] TWHBEKGYWPPYQL-UHFFFAOYSA-N 0.000 claims description 5
- 229910017052 cobalt Inorganic materials 0.000 claims description 5
- 239000010941 cobalt Substances 0.000 claims description 5
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 5
- 229910052735 hafnium Inorganic materials 0.000 claims description 5
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 5
- WHJFNYXPKGDKBB-UHFFFAOYSA-N hafnium;methane Chemical compound C.[Hf] WHJFNYXPKGDKBB-UHFFFAOYSA-N 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 229910052763 palladium Inorganic materials 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 229910052707 ruthenium Inorganic materials 0.000 claims description 5
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims description 5
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 5
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 claims description 5
- 229910052726 zirconium Inorganic materials 0.000 claims description 5
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 4
- 239000011737 fluorine Substances 0.000 claims description 4
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- IATRAKWUXMZMIY-UHFFFAOYSA-N strontium oxide Chemical compound [O-2].[Sr+2] IATRAKWUXMZMIY-UHFFFAOYSA-N 0.000 claims description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 claims description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 3
- 150000002978 peroxides Chemical class 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
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- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- WUNIMIODOAGQAW-UHFFFAOYSA-N [O-2].[Ba+2].[Ti+4] Chemical compound [O-2].[Ba+2].[Ti+4] WUNIMIODOAGQAW-UHFFFAOYSA-N 0.000 claims description 2
- PXNDALNSUJQINT-UHFFFAOYSA-N [Sc].[Ta] Chemical compound [Sc].[Ta] PXNDALNSUJQINT-UHFFFAOYSA-N 0.000 claims description 2
- ILCYGSITMBHYNK-UHFFFAOYSA-N [Si]=O.[Hf] Chemical compound [Si]=O.[Hf] ILCYGSITMBHYNK-UHFFFAOYSA-N 0.000 claims description 2
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- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 2
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- 229910000464 lead oxide Inorganic materials 0.000 claims description 2
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 claims description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 2
- CZXRMHUWVGPWRM-UHFFFAOYSA-N strontium;barium(2+);oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[O-2].[O-2].[Ti+4].[Sr+2].[Ba+2] CZXRMHUWVGPWRM-UHFFFAOYSA-N 0.000 claims description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- -1 yittrium oxide Chemical compound 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 239000011701 zinc Substances 0.000 claims description 2
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 claims description 2
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- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
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- 150000002221 fluorine Chemical class 0.000 description 1
- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
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- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
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Abstract
晶体管栅极包括:衬底,表面上设置有一对间隔物;高k电介质,保形地沉积在所述间隔物之间的衬底上;凹入功函数金属,其在高k电介质上并沿着所述间隔物的侧壁的一部分保形地沉积;第二功函数金属,保形地沉积在凹入功函数金属上;以及电极金属,沉积在第二功函数金属上。所述晶体管栅极可以通过以下步骤形成:将高k电介质保形地沉积在衬底上的间隔物之间的沟槽中、在高k电介质上保形地沉积功函数金属、在功函数金属上沉积牺牲掩模、蚀刻所述牺牲掩模的一部分以暴露功函数金属的一部分、以及蚀刻功函数金属的暴露部分以形成凹入功函数金属。第二功函数金属和电极金属可沉积在凹入功函数金属上。
Description
背景技术
在下一代集成电路的制造中,用于互补金属氧化物半导体(CMOS)的栅电极的制造取得了进展,以高k介电材料和金属替代二氧化硅和多晶硅。替代金属栅极工艺(replacement metal gate process)常常用于形成栅电极。典型的替代金属栅极工艺始于在半导体衬底上、在一对间隔物之间形成高k介电材料和牺牲栅极。在诸如退火工艺的其它处理步骤之后,将牺牲栅极去除,并且以一个或多个金属层对所获得的沟槽进行填充。金属层可包括功函数金属以及电极金属层。
诸如原子层沉积(ALD)、化学气相沉积(CVD)、物理气相沉积(PVD)、电镀(EP)以及无电镀(EL)等工艺可用于沉积形成金属栅电极的一个或更多金属层。不幸的是,随着CMOS晶体管尺寸减小,例如,随着晶体管栅极的长度达到45nm及以下,诸如沟槽突悬以及空隙形成等问题变得越来越具有挑战性且越来越严峻,尤其是当需要双金属栅电极时。这是因为在较小的尺寸下,在沉积双金属层时用于形成金属栅电极的沟槽的深宽比变得极具挑战性(aggressive)。如同本领域的普通技术人员可认识到的,这样的高深宽比沟槽的金属化常常引起空隙形成。
因此,需要改进的工艺来形成45nm节点水平及以上的CMOS晶体管的双金属栅电极。
附图说明
图1A至图1D示出双金属栅电极的传统制造工艺;
图2是根据本发明实施方式的双金属栅电极的制造方法;
图3A至图3J示出执行图2的方法时形成的结构。
具体实施方式
这里所述的是形成双金属栅电极的***和方法。在以下的说明中,示范实施方式的各个方案将使用本领域的技术人员为将其工作的实质内容传达给其它的本领域技术人员所通用的术语进行描述。然而,对于本领域的技术人员而言显而易见的是,本发明可以仅以所述多个方案中的部分来实施。出于说明的目的,为了提供对示范实施方式的彻底理解,特定数字、材料和结构被阐述。然而,对于本领域的技术人员而言显而易见的是,可以在无需这些特定细节的情况下实施本发明。在其它情况下,将众所周知的特征省去或简化,以防止造成示范实施方式的不易理解。
将各种操作描述为多个分立的操作,从而,以最有助于理解本发明的方式进行描述,然而,说明的顺序不应解释为暗示这些操作必需依赖于顺序。事实上,这些操作不需以表述的顺序进行。
本发明的实施方式可以为CMOS晶体管(包括栅极长度为45nm或以下的晶体管)制造无空隙的双金属栅电极。双金属栅电极形成于沟槽中,并且包括多个金属层,所述多个金属层包括至少两个功函数金属层和至少一个电极金属层(也称为填充金属层)。根据本发明的实施方式,一个功函数金属层由凹入功函数金属层构成,所述凹入功函数金属层使得沟槽的入口更宽,由此使沟槽具有挑战性较小的深宽比。随后沟槽的金属化可产生无空隙的双金属栅电极。
图1A至图1D示出在高k介电材料上形成双金属栅电极的传统工艺,以供参考。图1A示出衬底100,在衬底100上可形成双金属栅电极。衬底100可以是体硅或绝缘体上硅衬底以及其他材料。衬底100包括本领域熟知的间隔物102和隔离结构104。例如,间隔物102可使用氮化硅形成,而隔离结构104可以是诸如层间电介质(ILD,如图1所示)、二氧化硅层或浅沟槽隔离(STI)结构等结构。间隔物102之间为沟槽区106,在沟槽区106中可形成栅电极。
图1B示出衬底100上和沟槽106中高k栅极介电层108的沉积。如图所示,高k栅极介电层108保形地覆盖其所沉积的表面,包括沟槽106的底部和侧壁。在沉积高k栅极介电层108之后可以进行一个或更多工艺,诸如沉积牺牲栅极,然后进行退火工艺来提高高k介电层108的质量。如果采用了牺牲栅极,可在随后将其去除,并以一个或更多金属层替代。
例如,在去除可选的牺牲栅极之后,图1C示出在沟槽106中沉积一个或多个功函数金属层。这里采用两个功函数金属层,第一功函数金属层110和第二功函数金属层112。这两个功函数金属层110和112形成双金属栅电极。如图所示,沟槽106的深宽比随着所沉积的各层而增大。在沉积两个功函数金属层110和112之后,留下的待填充的沟槽间隙的深宽比具有很高挑战性。
图1D示出在沟槽106中沉积电极金属层114。电极金属层114用于完成双金属栅电极的形成。经常使用比常规用作功函数金属的金属更易于抛光的填充金属来形成电极金属层114。如图1D所示,沟槽106的高深宽比导致在沉积电极金属层114期间出现沟槽突悬,从而引起沟槽106中产生空隙116。空隙116的出现增加了双金属栅电极的电阻并使其可靠性降低。
为了解决这个问题,本发明的方法提供一种能够形成无空隙的双金属栅电极的制造工艺。图2是根据本发明实施方式的形成双金属栅电极的方法200。图3A至图3J示出执行图2的方法200时形成的结构。为了清楚起见,在讨论方法200期间将参照图3A至图3J的结构。本领域的技术人员可认识到,根据需要可将方法200整合到替代金属栅极工艺中。
始于方法200,提供包括至少一对间隔物的衬底,其中所述间隔物被沟槽分离(图2的工艺202)。如上所述,所述衬底可由半导体处理中通用的结构构成,诸如体硅或绝缘体上硅结构。在其它实施方式中,衬底可使用可以或不可以与硅结合的备选材料形成,包括但不限于锗、锑化铟、碲化铅、砷化铟、磷化铟、砷化镓或者锑化镓。尽管这里描述了可形成衬底的材料的几个实例,但是可用作构建半导体器件的基础的任何材料都落入本发明的精神和范围内。间隔物可由诸如氮化硅、氧化硅、碳化硅、或各种低k氮化物或氧化物材料中任一种的材料形成。
参照图3A,其示出衬底300包括一对间隔物302。间隔物被沟槽304分离。衬底300也可以包括其它结构,例如ILD层306和STI结构(未示出)。
接下来,在沟槽中沉积高k栅极介电层(图2的工艺204)。可采用保形沉积工艺来沉积高k栅极介电层,例如CVD或ALD工艺。可用于高k栅极介电层的材料包括但不限于二氧化铪、氧化铪硅、氧化镧、氧化镧铝、氧化锆、氧化锆硅、氧化钽、氧化钛、氧化钡锶钛、氧化钡钛、氧化锶钛、氧化钇、氧化铝、氧化铅钪钽和铌酸铅锌。尽管这里描述了可用于形成高k栅极介电层的材料的几个实例,但是所述层可以由其它材料制成。在将方法200整合到替代金属栅极工艺中的实施方式中,可以对高k介电层进行其它处理,例如退火工艺,以提高高k介电层的质量。
图3B示出在沟槽304中保形地沉积的高k栅极介电层308。如图所示,因为高k栅极介电层308被保形地沉积,所以所述层308将形成在沟槽304的侧壁以及沟槽304的底部上。高k栅极介电层308也将形成在ILD层306上。在一些实施方式中,高k栅极介电层308可以小于约60埃厚,并且经常介于约厚与约厚之间。高k介电层308的厚度可以根据将形成的栅电极的需要而改变。
在备选工艺流程中,在形成间隔物之前,可通过减成工艺形成高k栅极介电层。例如,在衬底上可形成高k介电层并对其进行回蚀来形成平面高k栅极介电层。然后,在高k栅极介电层的相对侧可形成间隔物。在此备选实施方式中,高k栅极介电层仅存在于沟槽的底部上,而不存在于沟槽侧壁上。
在沉积高k栅极介电层之后,可沉积第一功函数金属层(图2的工艺206)。可采用功函数金属的传统沉积工艺,例如CVD、ALD、PVD、溅射、电镀或无电镀。在本发明的某些实施方式中,第一功函数金属层的厚度可以是介于大约与大约之间。
参照图3C,其示出第一功函数金属层310已经沉积在高k介电层308上。第一功函数金属层310可以由p型金属或n型金属构成,这取决于所述晶体管是PMOS还是NMOS晶体管。在某些实施方式中,形成PMOS晶体管,并且可用于形成p型功函数金属层的材料包括但不限于钌、钯、铂、钴、镍、以及导电金属氧化物,例如氧化钌。p型金属层使得PMOS栅电极形成有介于大约4.9eV与大约5.2eV之间的功函数。或者,在某些实施方式中,形成NMOS晶体管,并且可用于形成n型功函数金属层的材料包括但不限于铪、锆、钛、钽、铝及它们的合金,例如包括这些元素的金属碳化物,即碳化铪、碳化锆、碳化钛、碳化钽以及碳化铝。n型金属层使得NMOS栅电极形成有介于大约3.9eV与大约4.2eV之间的功函数。
接下来,在沟槽中第一功函数金属上沉积牺牲掩模材料(图2的工艺208)。牺牲掩模材料将用于限定凹入功函数金属层。在本发明的某些实施方式中,牺牲掩模材料可以由旋涂式玻璃(SOG)材料、例如牺牲光吸收材料(SLAM)构成。在其它实施方式中,牺牲掩模材料可以由底部防反射涂层材料(BARC)构成。SLAM和BARC通常用于半导体处理中,并且在此工艺中提供需要的功能。应注意SLAM和BARC的光吸收特性与本发明的实施方式并不相关。如果采用SOG材料,旋涂式沉积(SOD)工艺可用来在第一功函数金属层上沉积和平面化SOG材料。可采用的两种特定SOG材料为有机旋涂式材料,例如193nm SLAM和248nm SLAM。
图3D示出在第一功函数金属层310上沉积牺牲掩模材料312。牺牲掩模材料312完全填充沟槽,并且可采用SOD工艺来沉积。如上所述,可采用SOD沉积工艺来平面化牺牲掩模材料312。
在牺牲掩模沉积之后,可进行蚀刻工艺来部分地回蚀牺牲掩模材料(图2的工艺210)。在本发明的多种实施方式中,可采用湿法蚀刻化学品或干法蚀刻化学品。所采用的特定湿法或干法蚀刻化学品必需与所采用的牺牲掩模材料相适应。例如,如果采用SLAM材料作为牺牲掩模材料,则适当的湿法蚀刻化学品可由氟基湿法蚀刻化学品构成。在一种实施方式中,这种氟基湿法蚀刻可采用氟化氢(HF)、氟化铵(NH4F)以及蒸馏水的混合物来蚀刻SLAM层。在另一种实施方式中,羟基湿法蚀刻化学品可用于蚀刻SLAM,例如,极性溶剂介质中四甲基氢氧化铵(TMAH)和氢氧化钾(KOH)的混合物。或者,用于SLAM材料的适当干法蚀刻化学品可由CH2F2干法蚀刻化学品、SF6干法蚀刻化学品或者NF3干法蚀刻化学品构成。
图3E示出在采用蚀刻化学品向下蚀刻之后的牺牲掩模材料312。在本发明的某些实施方式中,牺牲掩模材料312被向下蚀刻,直到其为沟槽高度的大约二分之一至四分之三。牺牲掩模材料312的蚀刻工艺通常对第一功函数金属层310几乎没有影响。
接下来,这一次对第一功函数金属层进行另一部分蚀刻工艺(图2的工艺212)。第一功函数层的部分蚀刻仅仅去除金属的暴露部分;第一功函数层仍然被牺牲掩模材料覆盖的部分没有被蚀刻。这样的部分蚀刻导致形成“U”形凹入功函数金属层310,如图3F所示。在某些实施方式中,可采用湿法蚀刻化学品来蚀刻第一功函数金属层。例如,在一种实施方式中,蒸馏水、氢氧化铵(NH4OH)和过氧化氢(H2O2)的组合物,也就是公知的标准清洗溶液可用于蚀刻第一功函数金属层。可采用的另一种湿法蚀刻化学品是硫酸和过氧化物在蒸馏水中的混合物。本发明的实施方式中可采用的其它湿法蚀刻化学品包括磷酸、乙酸及硝酸的混合物;盐酸、过氧化氢及水的混合物;以及盐酸、硝酸及水的混合物。在另外的实施方式中,干法蚀刻化学品可用于部分地蚀刻第一功函数金属层。
如图3F所示,功函数金属层310的蚀刻致使功函数金属层310相对于间隔物302凹入,因此使沟槽340的开口变宽,从而降低其深宽比和允许随后沉积的金属更易于进入沟槽304。沟槽304的开口的增宽基本上减小或消除了沟槽突悬的出现。例如,在第一功函数金属层310大约厚的实施方式中,第一功函数金属层310的凹入使沟槽304展宽大约
在使第一功函数金属层310凹入之后,剩余的牺牲掩模材料可以被去除(图2的工艺214)。根据本发明的实施方式,与在工艺阶段210中用于部分地蚀刻牺牲掩模材料的工艺相同的湿法化学品工艺可在此使用,以去除剩余的牺牲掩模材料。在其它实施方式中,可使用备选的蚀刻工艺。图3G示出在去除了剩余的牺牲掩模材料312之后的凹入功函数金属层310。
接下来,沉积第二功函数金属层,以形成双金属栅电极(图2的工艺216)。同样地,可采用功函数金属的传统沉积工艺,例如CVD、ALD、PVD、溅射、电镀或无电镀。在本发明的某些实施方式中,第二功函数金属层的厚度可介于大约与大约之间。
第二功函数金属可以是p型金属或n型金属。在某些实施方式中,第一和第二功函数金属二者可以是同种类型的(即两n型金属或两p型金属),而在其它实施方式中,第一和第二功函数金属可以是不同类型的(即一n型金属与一p型金属结合)。可用于第二功函数金属层的p型功函数金属包括但不限于钌、钯、铂、钴、镍、以及导电金属氧化物,例如氧化钌。可用于第二功函数金属层的n型功函数金属包括但不限于铪、锆、钛、钽、铝及它们的合金,例如包括这些元素的金属碳化物,即碳化铪、碳化锆、碳化钛、碳化钽以及碳化铝。
图3H示出保形地沉积在凹入功函数金属310上的第二功函数金属层314。如图所示,尽管已经沉积第一和第二功函数金属层310/314,但是沟槽304仍然具有有利于随后金属化的宽开口。沟槽304的深宽比即使在其最窄的部分仍然远远低于传统双金属栅极工艺中形成的沟槽的深宽比。
在沉积第二功函数金属层之后,沉积电极金属、也称为填充金属,从而用金属完全填充沟槽(图2的工艺218)。填充金属通常是易于抛光的材料,例如钨、铝、铜或者其它低电阻率金属。图3I示出以基本上无空隙的方式完全填充沟槽304的填充金属316的沉积。
最后,可进行化学机械抛光(CMP)工艺来去除多余的材料层,从而完成根据本发明的双金属栅电极的制造(图2的工艺220)。图3J示出在CMP工艺已经去除多余材料之后的最终双金属栅电极318。例如,CMP工艺可以不仅去除多余的填充金属316,而且可以去除第二功函数金属层314和高k介电层308的多余部分。
在本发明的实施方式中,双金属栅电极318可用于形成CMOS晶体管。例如,在衬底300中邻近于间隔物302可形成源极区和漏极区。可使用离子注入工艺来对衬底300邻近于间隔物302的区域进行掺杂,以形成这样的源极和漏极区。此外,在双金属栅电极318下方可形成沟道区。可形成用于源极区、漏极区和双金属栅电极318的电接触,以使所形成的CMOS晶体管有效。
因此,描述了本发明的实施方式,其使得相比于传统双金属栅极制造工艺能够制造具有更低的深宽比和更宽的沟槽开口的双金属栅电极。结果是形成更少的沟槽突悬和更少的空隙,从而使金属栅电极具有更低的电阻和更高的可靠性。应注意尽管这里描述了几个可用于形成第一和第二功函数金属层以及填充金属层的材料实例,但是如对于本领域的技术人员而言显而易见的,这些金属层可以由许多其它材料形成。
以上对于本发明的所示实施方式的说明,包括摘要中描述的,不是意在穷举的或者将本发明限制为所公开的准确形式。尽管这里为了举例说明的目的而描述了本发明的具体实施方式和实例,但是如本领域的技术人员可认识到的,在本发明的范围内可进行多种等效修改。
按照以上详细描述可对本发明进行这些修改。在所附权利要求书中使用的术语不应解释为将本发明限制于说明书和权利要求书中公开的具体实施方式。更确切地,本发明的范围将完全由所附权利要求书确定,其将根据权利要求解释的已确立原则进行理解。
Claims (20)
1、一种装置,包括:
衬底;
一对间隔物,设置在所述衬底的表面上;
高k介电层,保形地沉积在所述一对间隔物之间的所述衬底的表面上和所述间隔物的侧壁上;
凹入功函数金属层,沿着所述一对间隔物之间的所述衬底的表面并沿着所述间隔物的侧壁的一部分,保形地沉积在所述高k介电层上;
第二功函数金属层,保形地沉积在所述凹入功函数金属层和所述一对间隔物上;以及
电极金属层,沉积在所述第二功函数金属层上。
2、根据权利要求1所述的装置,其中所述衬底包括半导体材料,而所述间隔物包括氮化硅。
3、根据权利要求1所述的装置,其中所述高k介电层包括:氧化铪、氧化铪硅、氧化镧、氧化镧铝、氧化锆、氧化锆硅、氧化钽、氧化钛、氧化钡锶钛、氧化钡钛、氧化锶钛、氧化钇、氧化铝、氧化铅钪钽或铌酸铅锌。
4、根据权利要求1所述的装置,其中所述凹入功函数金属层是“U”形的。
5、根据权利要求1所述的装置,其中所述凹入功函数金属层和所述第二功函数金属层均包括从钌、钯、铂、钴、镍、导电金属氧化物、氧化钌、铪、锆、钛、钽、铝、碳化铪、碳化锆、碳化钛、碳化钽以及碳化铝构成的组中选择的至少一种金属。
6、根据权利要求1所述的装置,其中所述电极金属包括钨、铝、铜或低电阻率金属。
7、根据权利要求1所述的装置,还包括:
源极区,邻近于所述间隔物中的一个;
漏极区,邻近于所述间隔物中的另一个;以及
沟道区,在所述高k介电层下方。
8、一种方法,包括:
提供具有由沟槽分离的一对间隔物的衬底;
将高k介电层保形地沉积在所述间隔物之间的所述沟槽中;
将第一功函数金属层保形地沉积在所述沟槽中、所述高k介电层上;
将牺牲掩模材料沉积在所述沟槽中、所述第一功函数金属层上;
蚀刻所述牺牲掩模材料的一部分,直到其为所述沟槽高度的大约二分之一至四分之三,以暴露所述第一功函数金属层的一部分;
蚀刻所述第一功函数金属层的暴露部分,以形成凹入功函数金属层;
蚀刻剩余的牺牲掩模材料;
在所述凹入功函数金属层上保形地沉积第二功函数金属层;
在所述第二功函数金属层上沉积电极金属层;以及
至少对所述电极金属层进行平面化。
9、根据权利要求8所述的方法,其中所述第一功函数金属层和所述第二功函数金属层均包括从钌、钯、铂、钴、镍、导电金属氧化物、氧化钌、铪、锆、钛、钽、铝、碳化铪、碳化锆、碳化钛、碳化钽以及碳化铝构成的组中选择的至少一种金属。
10、根据权利要求8所述的方法,其中所述牺牲掩模材料包括SOG材料、SLAM材料或BARC材料。
11、根据权利要求8所述的方法,其中所述牺牲掩模材料的蚀刻包括对所述牺牲掩模材料应用氟基湿法蚀刻化学品。
12、根据权利要求8所述的方法,其中所述牺牲掩模材料的蚀刻包括对所述牺牲掩模材料应用干法蚀刻化学品,其中所述干法蚀刻化学品包括CH2F2干法蚀刻化学品、SF6干法蚀刻化学品或NF3干法蚀刻化学品。
13、根据权利要求8所述的方法,其中所述第一功函数金属层的蚀刻包括对所述第一功函数金属层应用湿法蚀刻化学品,其中所述湿法蚀刻化学品包括以下组合物中的至少一种:蒸馏水、NH4OH和H2O2的组合物;硫酸、过氧化物和蒸馏水的组合物;磷酸、乙酸和硝酸的组合物;盐酸、H2O2和水的组合物、以及盐酸、硝酸和水的组合物。
14、根据权利要求8所述的方法,其中所述第一功函数金属层的蚀刻包括对所述第一功函数金属层应用干法蚀刻化学品。
15、一种方法,包括:
提供衬底;
在所述衬底上形成高k介电层;
蚀刻所述高k介电层,以形成高k栅极介电层;
在所述高k栅极介电层的相对边形成一对间隔物;
将第一功函数金属层保形地沉积在所述间隔物之间的沟槽中,并且保形地沉积在所述高k栅极介电层上;
将牺牲掩模材料沉积在所述沟槽中、所述第一功函数金属层上;
蚀刻所述牺牲掩模材料的一部分,以暴露所述第一功函数金属层的一部分;
蚀刻所述第一功函数金属层的暴露部分,以形成凹入功函数金属层;
蚀刻剩余的牺牲掩模材料;
在所述凹入功函数金属层上保形地沉积第二功函数金属层;
在所述第二功函数金属层上沉积电极金属层;以及
至少对所述电极金属层进行平面化。
16、根据权利要求15所述的方法,其中所述第一功函数金属层和所述第二功函数金属层均包括钌、钯、铂、钴、镍、导电金属氧化物、氧化钌、铪、锆、钛、钽、铝、碳化铪、碳化锆、碳化钛、碳化钽以及碳化铝中的至少一种。
17、根据权利要求15所述的方法,其中所述牺牲掩模材料的蚀刻包括应用氟基湿法蚀刻化学品。
18、根据权利要求15所述的方法,其中所述牺牲掩模材料的蚀刻包括应用CH2F2干法蚀刻化学品、SF6干法蚀刻化学品或NF3干法蚀刻化学品。
19、根据权利要求15所述的方法,其中所述第一功函数金属层的蚀刻包括应用以下组合物中的至少一种:蒸馏水、NH4OH和H2O2的组合物;硫酸、过氧化物和蒸馏水的组合物;磷酸、乙酸和硝酸的组合物;盐酸、H2O2和水的组合物;或者盐酸、硝酸和水的组合物。
20、根据权利要求15所述的方法,其中所述第一功函数金属层的蚀刻包括对所述第一功函数金属层应用干法蚀刻化学品。
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TW200812079A (en) | 2008-03-01 |
JP5062913B2 (ja) | 2012-10-31 |
GB2450836A (en) | 2009-01-07 |
WO2007133440A3 (en) | 2008-01-10 |
US8193641B2 (en) | 2012-06-05 |
DE112007001134T5 (de) | 2009-04-09 |
US8377771B2 (en) | 2013-02-19 |
TWI354374B (en) | 2011-12-11 |
WO2007133440A2 (en) | 2007-11-22 |
KR101332104B1 (ko) | 2013-11-21 |
JP2009534847A (ja) | 2009-09-24 |
GB2450836B (en) | 2011-09-21 |
DE112007001134B4 (de) | 2014-12-11 |
KR20080110891A (ko) | 2008-12-19 |
US20070262451A1 (en) | 2007-11-15 |
GB0819771D0 (en) | 2008-12-03 |
US20120264285A1 (en) | 2012-10-18 |
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