CN101431028A - Enhancement type back grid zinc oxide nano wire field effect transistor and method for producing the same - Google Patents
Enhancement type back grid zinc oxide nano wire field effect transistor and method for producing the same Download PDFInfo
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- CN101431028A CN101431028A CN 200810227461 CN200810227461A CN101431028A CN 101431028 A CN101431028 A CN 101431028A CN 200810227461 CN200810227461 CN 200810227461 CN 200810227461 A CN200810227461 A CN 200810227461A CN 101431028 A CN101431028 A CN 101431028A
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- zinc oxide
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- oxide nanowire
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN 200810227461 CN101431028B (en) | 2008-11-25 | 2008-11-25 | Enhancement type back grid zinc oxide nano wire field effect transistor and method for producing the same |
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CN 200810227461 CN101431028B (en) | 2008-11-25 | 2008-11-25 | Enhancement type back grid zinc oxide nano wire field effect transistor and method for producing the same |
Publications (2)
Publication Number | Publication Date |
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CN101431028A true CN101431028A (en) | 2009-05-13 |
CN101431028B CN101431028B (en) | 2010-08-11 |
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CN 200810227461 Expired - Fee Related CN101431028B (en) | 2008-11-25 | 2008-11-25 | Enhancement type back grid zinc oxide nano wire field effect transistor and method for producing the same |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102214577A (en) * | 2010-04-09 | 2011-10-12 | 中国科学院微电子研究所 | Method for manufacturing nano switch |
CN107331618A (en) * | 2012-12-18 | 2017-11-07 | 英特尔公司 | Using orienting the vertical nanowire transistor raceway groove of self assembly and the patterning of grid |
-
2008
- 2008-11-25 CN CN 200810227461 patent/CN101431028B/en not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102214577A (en) * | 2010-04-09 | 2011-10-12 | 中国科学院微电子研究所 | Method for manufacturing nano switch |
CN107331618A (en) * | 2012-12-18 | 2017-11-07 | 英特尔公司 | Using orienting the vertical nanowire transistor raceway groove of self assembly and the patterning of grid |
CN107331618B (en) * | 2012-12-18 | 2020-11-27 | 英特尔公司 | Patterning of vertical nanowire transistor channels and gates with directed self-assembly |
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Publication number | Publication date |
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CN101431028B (en) | 2010-08-11 |
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Owner name: INST OF MICROELECTRONICS, C. A. S Effective date: 20130419 Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHA Free format text: FORMER OWNER: INST OF MICROELECTRONICS, C. A. S Effective date: 20130419 |
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Free format text: CORRECT: ADDRESS; FROM: 100029 CHAOYANG, BEIJING TO: 201203 PUDONG NEW AREA, SHANGHAI |
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Effective date of registration: 20130419 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Patentee after: Institute of Microelectronics, Chinese Academy of Sciences Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Institute of Microelectronics Patentee before: Institute of Microelectronics, Chinese Academy of Sciences |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100811 Termination date: 20181125 |
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CF01 | Termination of patent right due to non-payment of annual fee |