CN101427375A - 用于改进保护暗参考列和行免受模糊现象和串扰的n阱势垒像素 - Google Patents
用于改进保护暗参考列和行免受模糊现象和串扰的n阱势垒像素 Download PDFInfo
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- CN101427375A CN101427375A CNA2007800142161A CN200780014216A CN101427375A CN 101427375 A CN101427375 A CN 101427375A CN A2007800142161 A CNA2007800142161 A CN A2007800142161A CN 200780014216 A CN200780014216 A CN 200780014216A CN 101427375 A CN101427375 A CN 101427375A
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14654—Blooming suppression
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
Claims (34)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/408,194 | 2006-04-21 | ||
US11/408,194 US20070246788A1 (en) | 2006-04-21 | 2006-04-21 | N-well barrier pixels for improved protection of dark reference columns and rows from blooming and crosstalk |
Publications (1)
Publication Number | Publication Date |
---|---|
CN101427375A true CN101427375A (zh) | 2009-05-06 |
Family
ID=38362870
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNA2007800142161A Pending CN101427375A (zh) | 2006-04-21 | 2007-04-09 | 用于改进保护暗参考列和行免受模糊现象和串扰的n阱势垒像素 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20070246788A1 (zh) |
EP (1) | EP2020032A1 (zh) |
JP (1) | JP2009534836A (zh) |
KR (1) | KR20090005169A (zh) |
CN (1) | CN101427375A (zh) |
TW (1) | TW200810097A (zh) |
WO (1) | WO2007127051A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109411495A (zh) * | 2018-10-24 | 2019-03-01 | 上海华力微电子有限公司 | 一种优化势垒区像素离子注入改善串扰的方法 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7902624B2 (en) * | 2004-02-02 | 2011-03-08 | Aptina Imaging Corporation | Barrier regions for image sensors |
US8093541B2 (en) | 2008-06-05 | 2012-01-10 | Aptina Imaging Corporation | Anti-blooming protection of pixels in a pixel array for multiple scaling modes |
JP5322816B2 (ja) * | 2009-07-15 | 2013-10-23 | キヤノン株式会社 | 撮像装置およびその制御方法 |
JP6366573B2 (ja) | 2012-04-30 | 2018-08-01 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | デカップリングにより毎ピクセル・アナログチャネルウェル絶縁された画像化検出器及び方法 |
KR102383649B1 (ko) | 2014-08-19 | 2022-04-08 | 삼성전자주식회사 | Cmos 이미지 센서 |
CN104269419B (zh) * | 2014-09-24 | 2017-02-15 | 格科微电子(上海)有限公司 | 图像传感器及其形成方法 |
FR3030884B1 (fr) * | 2014-12-19 | 2016-12-30 | Stmicroelectronics (Grenoble 2) Sas | Structure de pixel a multiples photosites |
KR102407036B1 (ko) | 2015-11-03 | 2022-06-10 | 삼성전자주식회사 | 이미지 센서 및 이미지 센서의 동작 방법 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05129572A (ja) * | 1991-10-31 | 1993-05-25 | Canon Inc | 固体撮像装置 |
JP4489319B2 (ja) * | 2001-04-26 | 2010-06-23 | 富士通マイクロエレクトロニクス株式会社 | 固体撮像装置 |
US6921934B2 (en) * | 2003-03-28 | 2005-07-26 | Micron Technology, Inc. | Double pinned photodiode for CMOS APS and method of formation |
US7002231B2 (en) * | 2004-02-02 | 2006-02-21 | Micron Technology, Inc. | Barrier regions for image sensors |
JP2006032688A (ja) * | 2004-07-16 | 2006-02-02 | Fujitsu Ltd | 固体撮像装置 |
-
2006
- 2006-04-21 US US11/408,194 patent/US20070246788A1/en not_active Abandoned
-
2007
- 2007-04-09 CN CNA2007800142161A patent/CN101427375A/zh active Pending
- 2007-04-09 JP JP2009506513A patent/JP2009534836A/ja not_active Withdrawn
- 2007-04-09 KR KR1020087027596A patent/KR20090005169A/ko not_active Application Discontinuation
- 2007-04-09 WO PCT/US2007/008865 patent/WO2007127051A1/en active Application Filing
- 2007-04-09 EP EP07755216A patent/EP2020032A1/en not_active Withdrawn
- 2007-04-20 TW TW096114094A patent/TW200810097A/zh unknown
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109411495A (zh) * | 2018-10-24 | 2019-03-01 | 上海华力微电子有限公司 | 一种优化势垒区像素离子注入改善串扰的方法 |
Also Published As
Publication number | Publication date |
---|---|
US20070246788A1 (en) | 2007-10-25 |
TW200810097A (en) | 2008-02-16 |
EP2020032A1 (en) | 2009-02-04 |
JP2009534836A (ja) | 2009-09-24 |
WO2007127051A1 (en) | 2007-11-08 |
KR20090005169A (ko) | 2009-01-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: APTINA IMAGING CORP. Free format text: FORMER OWNER: MICRON TECHNOLOGY INC. Effective date: 20100402 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: IDAHO,U.S.A. TO: CAYMAN ISLANDS |
|
TA01 | Transfer of patent application right |
Effective date of registration: 20100402 Address after: Cayman Islands Applicant after: Micron Technology Inc. Address before: Idaho Applicant before: Micron Technology, Inc. |
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C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20090506 |