CN101419996B - 红外—紫外多色探测器及其制备方法 - Google Patents
红外—紫外多色探测器及其制备方法 Download PDFInfo
- Publication number
- CN101419996B CN101419996B CN2008100799339A CN200810079933A CN101419996B CN 101419996 B CN101419996 B CN 101419996B CN 2008100799339 A CN2008100799339 A CN 2008100799339A CN 200810079933 A CN200810079933 A CN 200810079933A CN 101419996 B CN101419996 B CN 101419996B
- Authority
- CN
- China
- Prior art keywords
- type
- layer
- gan
- algan
- infrared
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title description 4
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 60
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 230000004888 barrier function Effects 0.000 claims abstract description 14
- 238000002360 preparation method Methods 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 8
- 238000012545 processing Methods 0.000 claims abstract description 4
- 229920002120 photoresistant polymer Polymers 0.000 claims description 13
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- 238000001259 photo etching Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 238000005566 electron beam evaporation Methods 0.000 claims description 6
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 238000002161 passivation Methods 0.000 claims description 4
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 6
- 238000012544 monitoring process Methods 0.000 abstract description 4
- 238000003384 imaging method Methods 0.000 abstract description 3
- 230000005855 radiation Effects 0.000 description 7
- 238000001514 detection method Methods 0.000 description 5
- 238000013461 design Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000000825 ultraviolet detection Methods 0.000 description 3
- PLXMOAALOJOTIY-FPTXNFDTSA-N Aesculin Natural products OC[C@@H]1[C@@H](O)[C@H](O)[C@@H](O)[C@H](O)[C@H]1Oc2cc3C=CC(=O)Oc3cc2O PLXMOAALOJOTIY-FPTXNFDTSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000003331 infrared imaging Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 230000033772 system development Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2008100799339A CN101419996B (zh) | 2008-12-04 | 2008-12-04 | 红外—紫外多色探测器及其制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2008100799339A CN101419996B (zh) | 2008-12-04 | 2008-12-04 | 红外—紫外多色探测器及其制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101419996A CN101419996A (zh) | 2009-04-29 |
CN101419996B true CN101419996B (zh) | 2010-09-22 |
Family
ID=40630694
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008100799339A Expired - Fee Related CN101419996B (zh) | 2008-12-04 | 2008-12-04 | 红外—紫外多色探测器及其制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN101419996B (zh) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101894831B (zh) * | 2009-05-20 | 2012-08-22 | 中国科学院半导体研究所 | 紫外-红外双波段探测器及其制作方法 |
CN102201484B (zh) * | 2011-05-06 | 2013-01-09 | 中国科学院上海技术物理研究所 | 具有二次台面包裹电极的AlGaN紫外探测器及制备方法 |
CN102593234B (zh) * | 2012-02-22 | 2014-07-09 | 中山大学 | 一种基于异质结构的吸收、倍增层分离的紫外雪崩光电探测器 |
CN103050498B (zh) * | 2012-12-28 | 2015-08-26 | 中山大学 | 一种微纳米线阵列结构紫外雪崩光电探测器及其制备方法 |
CN104332523B (zh) * | 2014-08-15 | 2017-01-18 | 中国空空导弹研究院 | 一种基于石墨烯的三模复合探测器 |
CN105140110B (zh) * | 2015-07-07 | 2017-10-24 | 中国电子科技集团公司第五十五研究所 | 一种高可靠AlGaN/GaN异质结构设计方法 |
GB201611652D0 (en) * | 2016-07-04 | 2016-08-17 | Spts Technologies Ltd | Method of detecting a condition |
CN108281496A (zh) * | 2018-01-10 | 2018-07-13 | 西安理工大学 | 一种硅基PiN紫外光电二极管及其制备方法 |
CN108470793B (zh) * | 2018-02-26 | 2023-12-08 | 厦门大学 | 紫外-红外双波段集成p-i-n型光电探测器 |
CN108321244B (zh) * | 2018-03-26 | 2024-03-29 | 厦门三优光电股份有限公司 | 用于紫外红外双色探测的紫外光电探测器及其制备方法 |
CN109935655B (zh) * | 2019-04-03 | 2024-02-06 | 南京紫科光电科技有限公司 | 一种AlGaN/SiC双色紫外探测器 |
CN110212043B (zh) * | 2019-04-16 | 2021-04-27 | 湖北光安伦芯片有限公司 | 双台阶光电器件及其制备方法 |
CN111628013B (zh) * | 2020-01-14 | 2022-04-05 | 深圳第三代半导体研究院 | 一种硅基环形多波段探测器及其制作方法 |
CN112490257B (zh) * | 2020-12-15 | 2021-11-09 | 南京工业职业技术大学 | 一种GaN基混合式三维成像与测距装置 |
CN112928178B (zh) * | 2021-02-07 | 2021-11-02 | 中山德华芯片技术有限公司 | 一种三色探测器及其制作方法 |
-
2008
- 2008-12-04 CN CN2008100799339A patent/CN101419996B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN101419996A (zh) | 2009-04-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101419996B (zh) | 红外—紫外多色探测器及其制备方法 | |
CN103646986B (zh) | 一种AlGaN基双色日盲紫外探测器及制作方法 | |
CN111081792B (zh) | 一种背照射紫外红外双色光电探测器及其制备方法 | |
KR100676288B1 (ko) | 자외선 감지 반도체 소자 | |
CN110047968A (zh) | 一种AlGaN基3D倒装焊MSM阵列紫外探测器的制备方法 | |
CN107180890A (zh) | 一种背照式窄带通日盲紫外探测器及其制备方法 | |
CN110047955A (zh) | 一种AlGaN紫外雪崩光电二极管探测器及其制备方法 | |
CN100334739C (zh) | 紫外双波段氮化镓探测器 | |
US8053734B2 (en) | Nano-antenna for wideband coherent conformal IR detector arrays | |
CN114267747B (zh) | 具有金属栅结构的Ga2O3/AlGaN/GaN日盲紫外探测器及其制备方法 | |
CN109962125A (zh) | 一种等离激元增强型深紫外探测器及其制作方法 | |
CN106684203B (zh) | 一种镓氮雪崩光电二极管组件及其制作方法 | |
CN108470793B (zh) | 紫外-红外双波段集成p-i-n型光电探测器 | |
CN104538481A (zh) | InGaAs/QWIP双色红外探测器及其制备方法 | |
CN110676272A (zh) | 一种半导体紫外光电探测器 | |
CN103904161B (zh) | 双光栅双色量子阱红外探测器面阵的制作方法 | |
CN210092110U (zh) | 一种深紫外增强的SiC肖特基势垒型紫外探测器 | |
US7923689B2 (en) | Multi-band sub-wavelength IR detector having frequency selective slots and method of making the same | |
CN205092255U (zh) | 一种镓氮雪崩光电二极管组件 | |
CN108899380A (zh) | 红外半导体雪崩探测器及其制备方法 | |
CN112018210B (zh) | 极化增强窄带AlGaNp-i-n型紫外探测器及其制备方法 | |
CN109524499A (zh) | 可见光拓展的中波红外探测器单元器件及其制备方法 | |
CN110459658A (zh) | 一种P型GaN层的UV LED芯片及其制备方法 | |
CN114373813A (zh) | 一种用于可见光通信的芯片及其制备方法与应用 | |
CN101572278B (zh) | 光导型双色紫外红外探测器及其制备方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
EE01 | Entry into force of recordation of patent licensing contract |
Assignee: SHENTONG PHOTOELECTRICITY SCIENCE AND TECHNOLOGY CO.,LTD. Assignor: THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY Group Corp. Contract record no.: 2012130000078 Denomination of invention: Infrared-ultraviolet multi-color detector and production process thereof Granted publication date: 20100922 License type: Exclusive License Open date: 20090429 Record date: 20120517 |
|
EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20090429 Assignee: SHENTONG PHOTOELECTRICITY SCIENCE AND TECHNOLOGY CO.,LTD. Assignor: THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY Group Corp. Contract record no.: 2012130000078 Denomination of invention: Infrared-ultraviolet multi-color detector and production process thereof Granted publication date: 20100922 License type: Exclusive License Record date: 20120517 |
|
LICC | Enforcement, change and cancellation of record of contracts on the licence for exploitation of a patent or utility model | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100922 |
|
CF01 | Termination of patent right due to non-payment of annual fee |