CN101414570B - Semiconductor technology method and semiconductor device system - Google Patents
Semiconductor technology method and semiconductor device system Download PDFInfo
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- CN101414570B CN101414570B CN2007101671037A CN200710167103A CN101414570B CN 101414570 B CN101414570 B CN 101414570B CN 2007101671037 A CN2007101671037 A CN 2007101671037A CN 200710167103 A CN200710167103 A CN 200710167103A CN 101414570 B CN101414570 B CN 101414570B
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Abstract
The invention relates to a semiconductor process method and a semiconductor device system. The semiconductor process at least comprises a first high-temperature furnace tube process and a second high-temperature furnace tube process. The method carries out the first high-temperature furnace tube process of a first wafer cassette which is loaded with at least one chip. Then, the second high-temperature furnace tube process is carried out on a second wafer cassette which is loaded with the chip. Furthermore, a movement step is carried out before the second high-temperature furnace tube process, thereby leading the relative positions of the chip on the first wafer cassette and the second wafer cassette to be different.
Description
Technical field
The invention relates to a kind of integrated circuit technology and device, and particularly relevant for a kind of semiconductor technology method and the semiconductor device system that comprise boiler tube technology and boiler tube equipment.
Background technology
In the middle of integrated circuit technology, many steps all must be carried out under hot environment, for example be used for thermal diffusion (thermal diffusion) technology of dopant ion, thermal oxidation (thermaloxidation) technology of growth oxide layer, and annealing (annealing) technology that is used for eliminating defective (defects).
Above-mentioned heat treatment method generally all is chip (wafer) is placed brilliant boat (boat) and to send boiler tube (furnace) reaction to, and question response is finished taking-up.In addition, when carrying out next boiler tube technology, then be to place same a collection of (lot) chip on this brilliant boat to send the boiler tube reaction again to, similarly question response is finished taking-up.
Generally speaking, the inside of brilliant boat can be separated into the zone (chip groove) of lattice one lattice, and loading a plurality of chips, and each chip groove is to be disposed 3 cross bars (pin) and formed by the horizontal plane at brilliant boat body.In detail, chip can directly contact with the cross bar of brilliant boat, and chip is exactly fixedly to be seated in the chip groove of brilliant boat by these cross bars support.Yet, after high-temperature furnace tube process, can produce damage (damage) with zone on the chip that brilliant boat contacts.For example, on chip, can cause difference row (dislocation) and slippage faults in material (defect) such as (slip).Particularly, because all identical in different boiler tube technology on the chip, so after high-temperature furnace tube process repeatedly, the damage status on the chip can be subjected to temperatures involved and more serious with the zone of brilliant boat contact.Thus, the stability of subsequent technique can be reduced widely, even the reliability and the productive rate (yield) of product and element can be had a strong impact on.
Summary of the invention
In view of this, purpose of the present invention is providing a kind of semiconductor technology method exactly, can avoid because of multiple high temp boiler tube technology causes serious damage problem to chip, and influence the stability and the reliability of subsequent technique.
Another object of the present invention provides a kind of semiconductor device system, can solve because of multiple high temp boiler tube technology to the major injury problem that chip caused, improve the stability of subsequent technique and the reliability and the productive rate of element.
The present invention proposes a kind of semiconductor technology method.Semiconductor technology comprises one first high-temperature furnace tube process and one second high-temperature furnace tube process at least.The method is for carrying out first high-temperature furnace tube process to the first brilliant boat that is mounted with at least one chip.Then, the second brilliant boat that is mounted with chip is carried out second high-temperature furnace tube process.And, before carrying out second high-temperature furnace tube process, carry out first and move step, make chip different on the first brilliant boat with the relative position of chip on the second brilliant boat.
According to the described semiconductor technology method of embodiments of the invention, above-mentioned first moves step for utilizing a mechanical arm, makes chip rotate an angle on same horizontal plane.
According to the described semiconductor technology method of embodiments of the invention, above-mentioned first to move step be to utilize the location of one in boiler tube board device, changes the relative position of chip on the first brilliant boat and the second brilliant boat.
According to the described semiconductor technology method of embodiments of the invention, above-mentioned first moves step rotates brilliant boat and changes the relative position of chip on this first brilliant boat and the second brilliant boat for utilizing.
According to the described semiconductor technology method of embodiments of the invention, the first above-mentioned high-temperature furnace tube process and the technological temperature of second high-temperature furnace tube process are more than or equal to 900 ℃.
According to the described semiconductor technology method of embodiments of the invention, above-mentioned after first high-temperature furnace tube process, and first move before the step, more comprises carrying out at least one low temperature oven plumber's skill.
According to the described semiconductor technology method of embodiments of the invention, the first above-mentioned brilliant boat comprises a brilliant boat body, and disposes a support portion at each horizontal plane of brilliant boat body.Wherein, the support portion for example is a plurality of cross bars, has the toroidal membrane of a side for opening, or has a side for opening and surperficial toroidal membrane with at least one opening.And the material of the first brilliant boat for example is quartz, carborundum or other suitable materials.In one embodiment, the second brilliant boat and the first brilliant boat are same brilliant boat or are not same brilliant boat.
According to the described semiconductor technology method of embodiments of the invention, above-mentionedly carry out first and move before the step, also comprise and carry out a chip curvature measurement step, and by the relative shift of the measured value decision chip that obtains.
According to the described semiconductor technology method of embodiments of the invention, above-mentioned after second high-temperature furnace tube process, comprise that also one the 3rd brilliant boat to being mounted with chip carries out one the 3rd high-temperature furnace tube process, and before carrying out the 3rd high-temperature furnace tube process, carry out one second and move step, make chip different with the relative position on the 3rd brilliant boat at this first brilliant boat, the second brilliant boat.Wherein, second move step and this first to move step identical or different.In addition, after second high-temperature furnace tube process, and second move before the step, more comprises carrying out at least one low temperature oven plumber's skill.And the technological temperature of the 3rd high-temperature furnace tube process is more than or equal to 900 ℃.The 3rd brilliant boat and the second brilliant boat are same brilliant boat or are not same brilliant boat.In one embodiment, carry out second and move before the step, also comprise and carry out a chip curvature measurement step, and determine the relative shift of chip by the measured value that obtains.
The present invention proposes a kind of semiconductor device system in addition, and it comprises that at least one boiler tube equipment and one moves the control website.Wherein, boiler tube equipment is in order to carrying out high-temperature furnace tube process, and boiler tube equipment comprises a brilliant boat, in order to load at least one chip.Move the control website and be coupled with boiler tube equipment, usefulness is so that when carrying out different high-temperature furnace tube process, chip is different with the relative position of brilliant boat.
According to the described semiconductor device system of embodiments of the invention, also comprise a chip curvature measurement website, be coupled with boiler tube equipment, mobile control website, in order to relative shift by the measured value decision chip that obtains.
According to the described semiconductor device system of embodiments of the invention, above-mentioned mobile control website makes chip rotate an angle on same horizontal plane for utilizing a mechanical arm.
According to the described semiconductor device system of embodiments of the invention, above-mentioned mobile control website changes the relative position of chip on this crystalline substance boat for utilizing a location device.
According to the described semiconductor device system of embodiments of the invention, above-mentioned mobile control website changes the relative position of chip on brilliant boat for utilizing the brilliant boat of rotation.
According to the described semiconductor device system of embodiments of the invention, the technological temperature of above-mentioned high-temperature furnace tube process is more than or equal to 900 ℃.
According to the described semiconductor device system of embodiments of the invention, above-mentioned brilliant boat comprises a brilliant boat body, and disposes a support portion at each horizontal plane of brilliant boat body.Wherein, the support portion for example is a plurality of cross bars, has the toroidal membrane of a side for opening, or has a side for opening and surperficial toroidal membrane with at least one opening.And the material of brilliant boat for example is quartz, carborundum or other suitable materials.
Apparatus system of the present invention increases extra mobile control website, to change the relative position of chip and brilliant boat, avoids the damage on the chip more serious because of multiple high temp boiler tube technology, and then influences the stability and the reliability of subsequent technique.In addition, apparatus system of the present invention also can further comprise chip curvature measurement website, decides the relative shift of chip to utilize resulting measured value, improves technology stability and reliability.On the other hand, method of the present invention is before the high-temperature furnace tube process of carrying out next time, changes the relative position of chip and brilliant boat, to avoid the damage on the chip that last time high-temperature furnace tube process was caused even more serious.And method of the present invention also is included in before the relative position that changes chip and brilliant boat, utilizes chip curvature measurement step, and determines the relative shift of chip by measured value, so can further improve the reliability and the productive rate of technology.
For above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, preferred embodiment cited below particularly, and cooperate appended graphicly, be described in detail below.
Description of drawings
Fig. 1 is the configuration schematic diagram according to the semiconductor device system that one embodiment of the invention illustrated.
Fig. 2 A is the generalized section that illustrates brilliant boat.
Fig. 2 B be illustrate brilliant boat on look schematic diagram
Fig. 2 C, Fig. 2 D, Fig. 2 E are the schematic diagram that illustrates the dividing plate of brilliant boat.
Fig. 3 is the flow chart of steps according to the semiconductor technology method that the embodiment of the invention illustrated.
Fig. 4 A for illustrate carry out mobile step before, the schematic top plan view of the cross bar of chip and brilliant boat.
Fig. 4 B for illustrate first move step after, the schematic top plan view of the cross bar of chip and brilliant boat.
Fig. 4 C for illustrate second move step after, the schematic top plan view of the cross bar of chip and brilliant boat.
The main element symbol description
100: semiconductor device system
110: boiler tube equipment
120: move the control website
130: chip curvature measurement website
201,402: chip
202: brilliant boat body
203,404: cross bar
204: the support portion
206,208: dividing plate
207: opening
310,303,305,320,330,333,335,340,350: step
Embodiment
Fig. 1 is the configuration schematic diagram according to the semiconductor device system that one embodiment of the invention illustrated.
Please refer to Fig. 1, semiconductor device system 100 comprises at least one boiler tube equipment 110, in order to carry out high-temperature furnace tube process.Be meant that in this so-called " high-temperature furnace tube process " technological temperature is the boiler tube technology more than or equal to 900 ℃.The semiconductor device system 100 of present embodiment for example has two boiler tube equipment 110, i.e. boiler tube equipment (A) and boiler tube equipment (B).Yet the present invention does not do special qualification to the quantity of boiler tube equipment, and its visual process requirements adjusts.Boiler tube equipment 110 mainly be by in order to the brilliant boat that loads chip and with so that the boiler tube that brilliant boat is placed in one constituted.In addition, boiler tube equipment also comprises members such as temperature controller, gas transfer pipeline usually.The configuration of the boiler tube equipment of general semiconductor technology knows that usually the knowledgeable knows, and repeats no more in this with being combined as to have in the art.The boiler tube equipment 110 of present embodiment can for example be oxide-diffused high temperature furnace, low-pressure chemical vapor deposition stove, or employed boiler tube equipment in other general semiconductor technologies.
Be noted that especially that shown in Fig. 2 A the brilliant boat of boiler tube equipment 110 (wafer boat) can for example be an employed brilliant boat in the general semiconductor technology.Brilliant boat comprises a brilliant boat body 202, and disposes the support portion 204 that contacts with chip at each horizontal plane of brilliant boat body 202, and brilliant boat body 202 is separated into a plurality of chip grooves, and chip 201 can be put thereon.Above-mentioned, the support portion 204 that is disposed at each horizontal plane of brilliant boat body 202 for example is to be made of three cross bars (pin) (shown in the label 203 of Fig. 2 B) or a plurality of cross bar.Certainly, the brilliant boat of boiler tube equipment 110 is not limited thereto, also the support portion 204 that is made of a plurality of cross bars can be replaced with and have the dividing plate 206 (shown in Fig. 2 C) that a side is the annular (promptly near the ㄇ shape or the shape of a hoof) of opening, or have the dividing plate 208 (shown in Fig. 2 D, Fig. 2 E) of opening 207.Above-mentioned, the material of the brilliant boat of boiler tube equipment 110 (comprising brilliant boat body 202 and support portion 204) for example is quartz, carborundum (SiC) or other suitable materials.
In addition, semiconductor device system 100 also includes one and moves control website 120.Move control website 120 and be coupled with boiler tube equipment 110, its function is when carrying out different high-temperature furnace tube process, makes chip different with the relative position of brilliant boat.In detail, after in boiler tube equipment, finishing for the second time high-temperature furnace tube process, carry out next time before the high-temperature furnace tube process, can enter and move control website 120, change the relative position of chip on brilliant boat, make that institute's damage that causes can be because of high-temperature furnace tube process is more serious next time in first time high-temperature furnace tube process.
Hold above-mentionedly, moving control website 120 for example is to utilize a mechanical arm, makes the chip in the brilliant boat rotate angle on same horizontal plane, with the relative position of change chip and brilliant boat.Or, moving control website 120, utilize a location device, make the relative position difference of chip on brilliant boat.In addition, can also be the mode of rotating brilliant boat by utilizing, reach the change chip purpose different with the relative position of brilliant boat.Certainly, have in the art and know also visual its demand of the knowledgeable usually, and change the different execution mode of relative position that in moving the control website, makes chip and brilliant boat with the teaching of aforementioned all embodiment according to spirit of the present invention.
Because known technology can cause the zone that directly contacts with brilliant boat on the chip to produce damage (damage), especially after high-temperature furnace tube process repeatedly, the situation of damage is more serious.Therefore, in semiconductor device system 100, increase extra mobile control website 120, can avoid known chip to cause the problem of damage, and influence the stability of subsequent technique and the reliability and the productive rate (yield) of element.
Please continue with reference to Fig. 1, in another embodiment, semiconductor device system 100 also includes a chip curvature measurement website 130.Chip curvature measurement website 130 is coupled with boiler tube equipment 110, mobile control website 120, and it is in order to decide the relative shift of chip by the chip curvature measurement that is obtained.The above-mentioned method of utilizing the relative shift of chip curvature measurement decision chip, for example be after chip curvature measurement website 130 measuring chip curvature, enter and move control website 120, and by resulting chip curvature measurement, so that move on the support portion of brilliant boat for the zone of caving in relatively on the chip.According to the chip curvature measurement relative shift of chip and brilliant boat is done appropriate adjustment, can further make chip in subsequent technique, have higher technology stability and reliability.Therefore, not only can avoid chip to cause damage problem seriously, and newly-increased chip curvature measurement website 130 also can improve technology stability and reliability because of multiple high temp boiler tube technology.
Below, utilize the semiconductor device system open oven plumber of the present embodiment process of planting.Fig. 3 is the flow chart of steps according to the semiconductor technology method that the embodiment of the invention illustrated.In the following embodiments, be that boiler tube equipment (A) 110 with Fig. 1 describes for the equipment that carries out high-temperature furnace tube process with boiler tube equipment (B) 110.
Please carry out first high-temperature furnace tube process (step 310) simultaneously with reference to Fig. 1 and Fig. 3, the technological temperature of first high-temperature furnace tube process is more than or equal to 900 ℃.Carrying out the step of first high-temperature furnace tube process, for example is that the brilliant boat that is mounted with at least one chip is delivered in the boiler tube equipment (A) 110, and carries out boiler tube technology after adjusting relevant parameter.In the present embodiment, be the placement relation that chip and brilliant boat are described with employed brilliant boat in the general semiconductor technology.Shown in Fig. 4 A, its illustrate chip 402 and brilliant boat cross bar 404 on look schematic diagram.Certainly, the invention is not restricted to be to use known brilliant boat, other embodiment of brilliant boat elaborate in above-mentioned, repeat no more in this.
Then, carry out one first and move step (step 320), make the relative position difference of chip on brilliant boat.First moves step for example is, after finishing first high-temperature furnace tube process, enter and move control website 1 20, utilize on the mechanical arm eleutheromorph boat chip gripper is gone out, and after rotation one angle on the same horizontal plane, insert again in same brilliant boat or another the brilliant boat, to change the relative position of chip and brilliant boat.In addition, other execution modes that change the relative position of chip and brilliant boat have been described also in the foregoing description, have repeated no more in this.Shown in Fig. 4 B, its illustrate through first move step after chip 402 and brilliant boat cross bar 404 on look schematic diagram.Wherein, dotted portion (---) is meant that first moves before the step, the position of cross bar 404 on chip 402 of brilliant boat.
Then, carry out second high-temperature furnace tube process (step 330), the technological temperature of second high-temperature furnace tube process is more than or equal to 900 ℃.Carrying out the step of second high-temperature furnace tube process, for example is to change the brilliant boat of chip and brilliant boat relative position, delivers in the boiler tube equipment (B) 110 by moving control website 120, and carries out boiler tube technology after adjusting relevant parameter.
In one embodiment, after first high-temperature furnace tube process (step 310) is finished, carry out second high-temperature furnace tube process (step 330) before, also can carry out low temperature oven plumber's skill (step 303) at least once.Because the damage problem on the chip only can be subjected to temperatures involved and become more serious.So, before carrying out low temperature oven plumber skill, do not need to change the step of chip and brilliant boat relative position.
Because, before carrying out high-temperature furnace tube process, can change the step of chip and brilliant boat relative position.That is be that in the high-temperature furnace tube process each time, chip is also inequality with the zone that brilliant boat directly contacts.Therefore, the damage status that can avoid causing a certain specific region on the chip continues to be enhanced because of repeatedly high-temperature furnace tube process.
In addition, please continue simultaneously with reference to Fig. 1 and Fig. 3, in one embodiment, carry out first and move step (step 320) before, also can carry out a chip curvature measurement step (step 305) earlier, and, decide the relative shift of chip by the chip curvature measurement that is obtained.Chip curvature measurement step, for example be before entering mobile control website 120, be introduced into chip curvature measurement website 130, utilize the method for measured chip curvature in the general semiconductor technology to measure, then according to the chip curvature measurement, at the relative position that moves control website 120 adjustment chips and brilliant boat.The method of above-mentioned measured chip curvature knows usually that by having in this area the knowledgeable is known, and repeats no more in this.
Next, please continue with reference to Fig. 3, carry out second high-temperature furnace tube process (step 330) afterwards, can proceed the 3rd high-temperature furnace tube process (step 350), the technological temperature of this 3rd high-temperature furnace tube process is more than or equal to 900 ℃.But, carrying out the 3rd high-temperature furnace tube process (step 350) before, need carry out second earlier and move step (step 340), making the relative position difference of chip on brilliant boat, avoiding the damage problem on the chip more serious, and reduce the stability and the element reliability of subsequent technique.Shown in Fig. 4 C, its illustrate through second move step after the schematic top plan view of chip 402 and the cross bar 404 of brilliant boat.Wherein, dotted portion (---) be meant that first moves before the step, the position of cross bar 404 on chip 402 of brilliant boat, the chain line part (---) be meant that first moves after the step, the position of cross bar 404 on chip 402 of brilliant boat.
Similarly, after second high-temperature furnace tube process (step 330) is finished, carry out the 3rd high-temperature furnace tube process (step 350) before, also can carry out low temperature oven plumber's skill (step 333) at least once.In addition, in one embodiment, carry out second and move step (step 340) before, also can carry out a chip curvature measurement step (step 335) earlier, and, decide the relative shift of chip by the chip curvature measurement that is obtained.
In sum, the present invention can be before the high-temperature furnace tube process of carrying out next time, changes the relative position of chip and brilliant boat, to avoid the damage on the chip that last time high-temperature furnace tube process was caused even more serious.In addition, the present invention goes back the relative shift that amount usable is surveyed chip curvature decision chip, with the reliability and the productive rate of further raising technology.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limiting the present invention, anyly has the knack of this skill person, without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is as the criterion when looking the claim person of defining.
Claims (22)
1. semiconductor technology method, this semiconductor technology comprises one first high-temperature furnace tube process and one second high-temperature furnace tube process at least, and this method comprises:
The first brilliant boat that is mounted with at least one chip is carried out this first high-temperature furnace tube process; And
The second brilliant boat that is mounted with this chip is carried out this second high-temperature furnace tube process,
And before carrying out this second high-temperature furnace tube process, carry out first and move step, make this chip different on this first brilliant boat with the relative position of this chip on this second brilliant boat,
Wherein the technological temperature of this first high-temperature furnace tube process and this second high-temperature furnace tube process is more than or equal to 900 ℃.
2. semiconductor technology method as claimed in claim 1, wherein this first moves step for utilizing a mechanical arm, makes this chip rotate an angle on same horizontal plane.
3. semiconductor technology method as claimed in claim 1, wherein this first to move step be the positioner that utilizes in the boiler tube board, change the relative position of this chip on this first brilliant boat and this second brilliant boat.
4. semiconductor technology method as claimed in claim 1, wherein this first moves step and changes the relative position of this chip on this first brilliant boat and this second brilliant boat for utilize rotating brilliant boat.
5. semiconductor technology method as claimed in claim 1, wherein after this first high-temperature furnace tube process, and this first moves before the step, also comprises and carries out at least one low temperature oven plumber's skill.
6. semiconductor technology method as claimed in claim 1, wherein this first brilliant boat comprises a brilliant boat body, and disposes a support portion at each horizontal plane of this crystalline substance boat body,
This support portion comprises a plurality of cross bars, has the toroidal membrane of a side for opening, or has a side for opening and surperficial toroidal membrane with at least one opening.
7. semiconductor technology method as claimed in claim 1, wherein the material of this first brilliant boat comprises quartz or carborundum.
8. semiconductor technology method as claimed in claim 1, wherein this second brilliant boat and this first brilliant boat are same brilliant boat or are not same brilliant boat.
9. semiconductor technology method as claimed in claim 1 wherein carries out this and first moves before the step, also comprises and carries out a chip curvature measurement step, and determine the relative shift of this chip by the measured value that obtains.
10. semiconductor technology method as claimed in claim 1, wherein after this second high-temperature furnace tube process, comprise that more one the 3rd brilliant boat to being mounted with this chip carries out one the 3rd high-temperature furnace tube process, and before carrying out the 3rd high-temperature furnace tube process, carry out one second and move step, make this chip different with the relative position on the 3rd brilliant boat at this first brilliant boat, this second brilliant boat.
11. semiconductor technology method as claimed in claim 10, wherein this second moves step and this first to move step identical or different.
12. semiconductor technology method as claimed in claim 10, wherein after this second high-temperature furnace tube process, and this second moves before the step, also comprises and carries out at least one low temperature oven plumber's skill.
13. semiconductor technology method as claimed in claim 10, wherein the technological temperature of the 3rd high-temperature furnace tube process is more than or equal to 900 ℃.
14. semiconductor technology method as claimed in claim 10, wherein the 3rd brilliant boat and this second brilliant boat are same brilliant boat or are not same brilliant boat.
15. semiconductor technology method as claimed in claim 10 wherein carries out this and second moves before the step, also comprises and carries out a chip curvature measurement step, and determine the relative shift of this chip by the measured value that obtains.
16. a semiconductor device system comprises:
At least one boiler tube equipment, in order to carry out high-temperature furnace tube process, this boiler tube equipment comprises a brilliant boat, in order to load at least one chip; And
One moves the control website, be coupled with this boiler tube equipment, and with so that when carrying out different high-temperature furnace tube process, this chip is different with the relative position of this crystalline substance boat,
Wherein the technological temperature of this high-temperature furnace tube process is more than or equal to 900 ℃.
17. semiconductor device system as claimed in claim 16 also comprises a chip curvature measurement website, with this boiler tube equipment, this moves the control website and be coupled, in order to determine the relative shift of this chip by the measured value that obtains.
18. semiconductor device system as claimed in claim 16 wherein should move the control website for utilizing a mechanical arm, made this chip rotate an angle on same horizontal plane.
19. semiconductor device system as claimed in claim 16 wherein should move the control website for utilizing a location device, changed the relative position of this chip on this crystalline substance boat.
20. semiconductor device system as claimed in claim 16, wherein being somebody's turn to do and moving the control website is to utilize the brilliant boat of rotation to change the relative position of this chip on this crystalline substance boat.
21. semiconductor device system as claimed in claim 16 wherein should comprise a brilliant boat body by the crystalline substance boat, and dispose a support portion at each horizontal plane of this crystalline substance boat body,
This support portion comprises a plurality of cross bars, has the toroidal membrane of a side for opening, or has a side for opening and surperficial toroidal membrane with at least one opening.
22. semiconductor device system as claimed in claim 16, material that wherein should the crystalline substance boat comprises quartz or carborundum.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007101671037A CN101414570B (en) | 2007-10-18 | 2007-10-18 | Semiconductor technology method and semiconductor device system |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007101671037A CN101414570B (en) | 2007-10-18 | 2007-10-18 | Semiconductor technology method and semiconductor device system |
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| CN101414570A CN101414570A (en) | 2009-04-22 |
| CN101414570B true CN101414570B (en) | 2011-11-23 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5180273A (en) * | 1989-10-09 | 1993-01-19 | Kabushiki Kaisha Toshiba | Apparatus for transferring semiconductor wafers |
| US5820366A (en) * | 1996-07-10 | 1998-10-13 | Eaton Corporation | Dual vertical thermal processing furnace |
| US7204887B2 (en) * | 2000-10-16 | 2007-04-17 | Nippon Steel Corporation | Wafer holding, wafer support member, wafer boat and heat treatment furnace |
-
2007
- 2007-10-18 CN CN2007101671037A patent/CN101414570B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5180273A (en) * | 1989-10-09 | 1993-01-19 | Kabushiki Kaisha Toshiba | Apparatus for transferring semiconductor wafers |
| US5820366A (en) * | 1996-07-10 | 1998-10-13 | Eaton Corporation | Dual vertical thermal processing furnace |
| US7204887B2 (en) * | 2000-10-16 | 2007-04-17 | Nippon Steel Corporation | Wafer holding, wafer support member, wafer boat and heat treatment furnace |
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| Publication number | Publication date |
|---|---|
| CN101414570A (en) | 2009-04-22 |
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