CN101413736A - The development and use of supporting role's energy - Google Patents
The development and use of supporting role's energy Download PDFInfo
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- CN101413736A CN101413736A CNA2008100716514A CN200810071651A CN101413736A CN 101413736 A CN101413736 A CN 101413736A CN A2008100716514 A CNA2008100716514 A CN A2008100716514A CN 200810071651 A CN200810071651 A CN 200810071651A CN 101413736 A CN101413736 A CN 101413736A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
The patent application of the development and use of supporting role's energy is served " environmental protection, energy-saving and emission-reduction " this focus of government work.The invention provides an approach that enters the energy that waits to develop---observe, analyze and use difference of temperature with band theory; And expand to the chemical electrolysis process.The energy field of aiming is a Q heat radiation energy, meets energy conservation and environment protection fully; In the process of development and use, because be in status passive, subordinate, so be its " supporting role's energy ".Wherein from commercialization production with to promote nearest be application in semiconductor LED and semiconductor laser---utilize the thermoelectric means to get involved their heat management and power-saving technology.
Description
The oil coal price soared in recent years, and energy scarcity develops the new energy field needs that become a reality.Patent of the present invention provides a kind of new way that enters the energy field that waits to develop.Because be in the status of a kind of passive utilization, subordinate, so claim the supporting role.
Technical field---Q heat radiation theory (part of electromagenetic wave radiation)
Semiconductor carriers can be with
Valence energy level poor (assembly average)
Metallic conductor can be with (probability distribution of energy level and assembly average)
Background technology---1, the deep development and use of radiant energy.
With the solar-energy photo-voltaic cell is example: the hv light quantum emittance grade that it can absorb, and must be greater than semiconductor forbidden band height Eg e
p+ hv=e
NLess than the light radiation of forbidden band height, and a large amount of Q heat radiations.Solar-energy photo-voltaic cell can't absorb.
So, where is the value of this part radiant energy?
These radiation can be used for carrier (common name of circuit conduction electrons) and can be with inner---between the upper limit and lower limit of carrier energy level (between at the bottom of energy level top and the energy level)---and rising between the adjacent or close energy level.The energy level of energy band inside is quasi-continuous collection utilizes the thermal-radiating chance of Q for us!
If we may find the object of a carrier energy band scope enough big---the carrier energy level difference between the upper limit and the lower limit is enough big---, can rely on and absorb the Q heat radiation, the carrier energy level can be divided with near the bottom (lower limit) of scope from this can rise to for several times, arrive near the top (upper limit) of this energy range; Find the filter of some carrier energy levels again---only allowing the carrier within the particular level scope to pass through---we just can realize the collection of Q heat radiation energy has been utilized.
We have found: the atomic kernel physical field with M metallic conductor (also containing a plurality of M conductor combinations) is a stage, and in a sizable energy band scope, carrier (playing the electronics of electric action) relies on and absorbs Q
Go intoHeat radiation or release Q
Go outHeat radiation, any one electron energy level within the energy band scope that can fluctuate.(annotate: can be with characteristic---the energy level difference between adjacent is small, and energy level rises to the Q of required income
Go intoEnergy value is small, the Q that energy level descends and discharged
Go outAlso be that energy value is small).
Background technology---2, people in daily production, life, the energy variation that is run into, most only relevant, and little with atomic nucleus, atomic kernel relation with the energy level variations of valence electron, carrier.
Learn that from chemical replacement the valence electron energy grade of each M metal has nothing in common with each other;
Thermoelectric effect from the physics DC circuit learns that the carrier of each M metal (participating in the valence electron of electric action) energy grade is to have nothing in common with each other;
Comprehensive observing contrast chemical replacement and physics thermoelectric effect, the height of each M metallic conductor valence electron, carrier energy grade puts in order, and chemical process is consistent with physics.
In electronic transfer process, the unit of charge is constant, and energy level changes.In chemical replacement, be that valence energy level changes.Valence energy level changes micro-analysis (getting assembly average); e
Zn=e
Cu+ Q e
A1=e
Zn+ Q is that the current-carrying electrons energy level changes in the physics DC circuit.The micro-analysis of difference of temperature: what the DC circuit heating end Q in the difference of temperature come from? again where heat absorbing end Q? obviously, the Q of heating end comes from the energy level decline of carrier; The Q of heat absorbing end has been absorbed by the rising of carrier energy level.Q
Go into, Q
Go outThe differential variation of other small explanation electronic energy of energy level small.And this may take place to be with between the inner adjacent or close energy level; Can not occur between each discrete electron energy level
Background technology---3, carrier energy level filter
Learn (laser/led illuminating lamp) by semiconductor energy gap figure
e
NConduction band carrier e
RForbidden band (Eg) e
pValence band carrier, holoe carrier
N-type semiconductor is high-order relatively carrier e in fact
NThe energy level filter;
P-type semiconductor is real to be relative low level carrier e
pThe energy level filter;
Learn by semiconductor cooler and energy band diagram thereof: do not have the forbidden band between M conductor and the N semiconductor, also do not have the forbidden band between M conductor and the P semiconductor; The M conductor can be with upper limit zone can be with the N semiconductor carriers and communicate, and can be with lower limit region communicate with the P semiconductor energy gap (as Fig. 2); M conductor (also containing the combination of M conductor) becomes quasi-continuous transition bridge of carrier energy level and buffer zone between N semiconductor and the P semiconductor.Make and absorb Q
Go intoBeing used becomes possibility!
Thus, we have found some carrier energy level filters again, make the deep development and use of the radiant energy feasible thing that becomes a reality, make the Q heat radiation can the collection utilization come true! As Fig. 2
Microscopic integrative is analyzed---and when an atom individualism, its energy level is discrete; Lean on very closely at two atoms, so that their energy level is when having intersection, these two atoms will interact, and cause energy level splitting; If it is very near that a lot of atoms lean on, so each energy level will split into much lean on very near energy level, almost join together, be called and can be with.Between the bandwidth upper and lower bound system, energy level wherein almost is continuous; Lap between different conductor can be with exists; Can a probability distribution and an assembly average be arranged the inner energy level of band; Wide can being with can be used as the quasi-continuous bridge of energy level, and narrow can being with may be as the energy level filter.
Summary of the invention---according to the 31st of "Patent Law": belong to the invention or utility model more than two of a total inventive concept, can be used as an application and propose.
First series: be applied to lighting LED, semiconductor laser
Luminous flux as room lighting, single led output must be enough big, desire strengthens the luminous flux of LED, at first must inject enough electrical power, but the temperature rise of led chip can not be too high, the limit value if tube core junction temperature liter is above standard, to cause irrecoverable property light intensity attenuation, and also can be subjected to very big influence simultaneously the service life of LED.So good radiating and cooling structure must be arranged.
The operating characteristic of semiconductor laser: 1, temperature is high more, and threshold value is high more.More than the 100K, threshold value increases with the cube of T.Therefore, semiconductor laser is preferably worked at low temperatures; 2, the quantum efficiency of gallium arsenide laser reaches 70%-80% during quantum efficiency 77K; During 300K, drop to about 30%.
Solution: 1, from illumination LED, set out in the visual angle of laser instrument, adds M metal heat absorbing sheet exactly and add cold junction in other words in DC circuit; M metal heat absorbing sheet contacts with P implementation face with chip N, substitutes original some contact.e
M+ Q
Go into=e
Ne
N=e
p+ hv
Go oute
p+ Q
Go into=e
NE
p+ Q=e
N
Carrier energy level variations and absorbing and cooling temperature such as Fig. 3
2, from the visual angle of semiconductor cooler, change hot junction Q exactly
Go outBe output as the output of hv light quantum; Tube core knot N semiconductor, the semi-conductive selection of P, LED is purpose with the illumination, laser instrument is a purpose with the Laser emission quantum efficiency.e
N=e
p+ Q
Go oute
N=e
p+ hv
Go outCarrier energy level variations and absorbing and cooling temperature process such as Fig. 3
Carrier energy level variations flow process when 3, contacting is e
M+ V
Outward=e
NE
p+ V
Outward=e
MAs Fig. 1; Carrier energy level variations flow process is e during the face contact
M+ Q
Go into=e
NE
p+ Q
Go into=e
MSemiconductor cooler promptly is one of example; The carrier energy level probability distribution of microcosmic detailed annotation M heat absorbing sheet, autobalance mechanism, assembly average or the like are limited to the specification length, have stopped at that.
Beneficial effect, technological progress have three: 1, add the input of supporting role's energy, and supporting role's energy is taken from interface material thermal vibration energy, surrounding medium heat radiation energy.Change single V
OutwardA kind of energy is input as two kinds of energy input V
Outward=V
R+ Q
Go intoV
OutwardBe extra electric field power, bearing simultaneously and overcome circuitous resistance, drive that carrier is directed to be moved, for the carrier energy level rises to e
M+ v
Outward=e
Ne
N=e
p+ hv goes out ... e
p+ V
Outward=e
NProvide energy to transform two tasks.V
RFor overcoming circuitous resistance, driving the directed power consumption of moving of carrier; Q
Go intoFor M heat absorbing sheet carrier energy level in the DC circuit rises to e
M+ Q
Go into=e
NE
p+ Q
Go into=e
MThe solid thermal vibrational energy that is absorbed, surrounding medium heat radiation; And V
Outward=V
R+ Q
Go intoQ
Go intoBe electric part.
If hv
Go out/ V
Outward=70%=hv
Go out/ V
R+ Q
Go intoQ
Go intoBe worth big more, V
RJust more little;
Hv
Go out/ V
RHv
Go out/ V
OutwardHv
Go out/ V
R70% improved the luminous efficiency (LED) of the W of unit
2, because cold junction M metal heat absorbing sheet directly contacts with N, P implementation face, the illumination LED chip directly obtains cooling and handles, and can carry out cooling in encapsulating structure;
The cool principle of laser tube core knot is identical with LED, can reduce threshold value thus, improves the quantum efficiency of Laser emission.
3, slow down the LED light intensity attenuation, prolong chip service life;
Slow down laser instrument NP bind up one's hair thermal losses aging, prolong NP knot service life.
Macroscopic analysis is explained: this is a kind of energy transfer process in fact, and the latter is that patent of the present invention is given illumination LED, and laser instrument adds up; Q
Go intoEnter DC circuit from cold junction, discharge from NP knot energy output again, whole energy input is a balance with output.The conservation of energy, law of conservation of energy V
Outward=V
R+ Q
Go intoV
RBe converted into conductor heat energy, become Q again
Go intoA part.
Micro-analysis is explained: in whole DC circuit, all molecule, atoms are all done thermal vibration in the original place, and mobile have only carrier.The carrier energy level variations is that illumination LED is luminous, the root of laser instrument emission laser, e
NWith e
pBetween have E
R(Eg), energy level is discontinuous, diving emission hv occurs; Also be to absorb Q
Go intoThermal-radiating root, continuous by means of accurate energy level, realized Q
Go intoAbsorb.
By means of the carrier energy level variations, we have realized the thermal-radiating collection utilization to Q.
Second series: the application among the chemical industry electrolytic circuit
The chemical industry electrolytic process comes down to one " redox reaction ", and oxidizing process (promptly exporting energy) the valence electron energy grade that gives off energy descends; Reduction process is the inverse process of oxidizing process, must import energy and return to oxidation valence energy level state before by the valence energy level rising.Irrelevant, also irrelevant substantially with atomic nucleus in this process with atomic kernel.
In existing electrolytic circuit, the energy of input electrolyte only depends on V
Outward(being extra electric field power) is a kind of.Overcome circuitous resistance, drive the directed dependence V that moves of carrier (conduction electrons)
Outward, it also is to rely on V that the lifting valence energy level makes it to return to oxidation state before
Outward
Solution: overcome circuitous resistance, drive directed moving of the task of carrier, give V
RGo to finish;
Promote the task of valence energy level, give Q as far as possible
Go intoGo to finish, insufficient section is by V
OutwardReplenish it; Power consumption in the electrolytic process is got off.As Fig. 3, Fig. 4.
With the chemical replacement is example explanation valence energy level: Zn+2H
+=Zn
+++ H
2↑+Q
Go oute
Zn=e
H2+ Q
Go outZn+C
U 2+=C
U↓+Q
Go oute
Zn=e
Cu+ Q
Go outValence electron energy level in chemical replacement descends, and Q must be arranged
Go outOutput.
From the visual angle of semiconductor cooler, change hot junction Q exactly and be output as electrolysis and can export; N type carrier filter is made negative electrode, exports the carrier of relative high level; The P type flows sub-filter and makes anode, absorbs the relative low-lying level carrier of input.Cold junction M metal heat absorbing sheet is carried out a plurality of M combinations (pressing carrier energy level main flow zone height order arranges).
Produce H with negative electrode
2↑, anode produces Q
2↑ be example: e
M+ Q
Go into=e
Ne
Cu+ Q
Go into=e
Zn
e
Zn+ Q
Go into=e
Ale
Al+ Q
Go into=e
Zne
ZnE
H22H
++ 2
Zn=H
2↑+Q
e
p+ Q
Go into=e
M40H
-=2H
2O+O
2↑-Q e
OH -≌ e
pOr e
OH -+ V
Outward=e
p
e
p+ Q=e
AUe
AU+ Q=e
Age
Ag+ Q=e
CUAs Fig. 4 (M
1-A
UM
2-A
gM
3-C
UM
4-Zn M
5-A
1
Compare with original electrolytic circuit, added cold junction M heat absorbing sheet absorbing environmental MEDIUM Q
Go intoHeat radiation.
Beneficial effect technological progress: 1, added the input of supporting role's energy; V
Outward=V
R+ Q
Go intoQ
Go intoBe the economize on electricity part.Details are please stated referring to one of first series, beneficial effect technological progress.
2, the cold junction refrigeratory capacity can be made purposes such as air-conditioning, little freezer as the byproduct of electrolytic process;
3, in the actual process design, by pressure limiting measure V
Outward↓, Q
Go into↑ V
OutwardConsumption lowers.
Macroscopic analysis is explained: the Q that cold junction absorbed in the electrolytic circuit
Go intoBe transferred and sent electrolyte to; Energy does not go out, and energy has been transferred.By a plurality of M sheet metal combinations, can enlarge Q
Go intoAbsorb.
Micro-analysis is explained: valence electron, carrier characteristic are that negative electrical charge quantity is constant, and energy state is variable, and energy level rises must absorb energy, and energy level descends and must release energy.Energy level within energy band scope rises, by absorbing Q
Go intoHeat radiation promptly can be finished, the microphenomenon in Here it is the DC circuit.
Summary of the invention---the 3rd series: with the air conditioner refrigerating is that purpose is used
Aspect the HVAC refrigeration, be steam compression type, cold-producing medium freezing by change of state technology at present according to the dominance.Semiconductor cooler has many-sided advantage with respect to steam compression type refrigeration, is exactly that the unit power consumption refrigerating capacity is also less than vapour compression refrigeration.
Solution: the Q that changes the hot junction goes out to be output as the output of hv light, and electrolysis can be exported, and is reclaimed generating, reduces original power consumption, improves the unit power consumption refrigerating capacity that reclaims after generating electricity.
1, the thermal output of change semiconductor cooler is hv output; e
N-hv=e
pLaser instrument is a purpose with the quantum efficiency of emission laser, and illumination LED is purpose with the visible emitting, as if being purpose with refrigeration, at first considers the emission effciency in hot junction, and what just needn't be particular about emission has been visible light or infrared ray, as long as launching effect well just becomes; Next considers the recovery generating of hot junction emission, and photovoltaic cell, minute surface reflect focalization etc. all is fine;
2, the Q that changes the semiconductor cooler hot junction is output as chemical electrolysis and can exports, and reclaims generating in the mode of aerochemistry battery, example: when electrolyte solution selected the KOH electrolysis of solutions about 40%, the N type filter was negative electrode 2H
++ 2e
N=H
2↑ e
M+ Q
Go into=e
NThe P type filter is anode 40H
---4e
p=2H
2O+O
2↑ e
p+ Q
Go into=e
MDuring as hydrogen-oxygen fuel cell, negative pole H
2 
2H
++ 2e
H2Anodal O
2 
E
H2=e
OH+ Vg Vg is the valence electron potential difference.
Beneficial effect, technological progress: 1, the energy in hot junction output, turn waste into wealth, become system burden into reclaiming the energy source of generating; The power consumption that offset is original improves population unit's power consumption refrigerating capacity, the dominance of challenge steam compression type, cold-producing medium freezing by change of state;
2, give full play to the advantage of semiconductor cooler, do not have vibration, noise during work, do not have the worry of cold-producing medium leakage pollution environment, do not have rotary part, significantly reduced day-to-day maintenance.
Macroscopic analysis, explanation: the energy way of output in semiconductor cooler hot junction, not only have only Q
Go outThermal output is a kind of.Change the energy way of output in hot junction, we just can give the receipts value for change whereby, reclaim the way of generating.
Micro-analysis, explanation: the carrier energy level variations is the basic reason of energy input, output in the DC circuit; Macroscopic appearance is the microscopic behavior inevitable outcome.
By means of the carrier band theory that energy level splitting in the solid forms, we have found a collection to utilize Q to go into thermal-radiating way finally.
Description of drawings---Fig. 1 explanation: the M metal wire contacts the assembly average that M lead carrier energy level is got M with the solid row point of NP; Carrier energy level difference between M-N, the P-M is by V
OutwardTransform.Energy resource structure is V only
OutwardA kind of input system.e
M+ V
Outward=e
Ne
N=e
p+ hv
Go outE
p+ V
Outward=e
M
Fig. 2 explanation: this is easy semiconductor cooler carrier energy level, can be with schematic diagram; What implementation face contact between M-N, the P-M, carrier were carried out at contact interface is that the sane level of carrier energy level shifts; The carrier energy level scope that carrier energy level scope, the P filter that the N filter allows to pass through allows to pass through comes into plain view on schematic diagram; Quasi-continuous spontaneous the finishing of carrier energy level in the rising of carrier energy level, the dependence M that descends can be with.Between each adjacent carrier energy level, energy level difference is very little in M can be with, and relies on to absorb Q
Go intoHeat radiation just can allow the carrier energy level rise.
Be followed successively by e in proper order by the carrier moving direction
M+ Q
Go into=e
NE
N=e
p+ Q
Go outE
p+ Q
Go into=e
M
Fig. 3 explanation: this is LED`, and the practical carrier of semiconductor laser can be with schematic diagram; Compared to Figure 1, many cold junction heat absorbing sheet M can be with, and to rise be high jump action e to the carrier energy level among Fig. 1
M+ V
Outward=e
Ne
p+ V
Outward=e
MThe rising of carrier energy level is the action e that goes upstairs among Fig. 3
M+ Q
Go into=e
Ne
p+ Q
Go into=e
MRely on cold junction heat absorbing sheet M can be with interior quasi-continuous spontaneous the finishing of energy level.Compare with Fig. 2, go up hot-side heat dissipation sheet M less and can be with, the decline of carrier energy level is the e that goes downstairs among Fig. 2
N=e
p+ Q
Go outThe decline of carrier energy level is dive e among Fig. 3
N=e
p+ h
v3 figure are made a contrast, e
NWith e
pBetween, discharge output energy value be the same, distinguish and to be that the energy emission mode of exporting is different.
Fig. 4 explanation: the energy-band overlap part between each M helps enlarging the continuous scope of carrier energy level; e
M1+ Q goes into=e
M2e
M2+ Q
Go into=e
M3e
M3+ Q
Go into=e
M4e
M4+ Q
Go into=e
M5e
p+ Q
Go into=e
M1e
M5+ Q
Go into=e
NAnd the energy level difference between each M conductor carrier energy level main flow zone of furthering, help big electric current by and Q
Go intoThermal-radiating making full use of.
The specific embodiment---in DC circuit, add cold junction M metal heat absorbing sheet; V
Outward=V
R+ Q
Go intoV
OutwardBe the power consumption before adding, V
RBe the power consumption after adding, Q
Go intoBe the supporting role's energy (thermal vibration energy of self or surrounding medium heat radiation energy) that is added into DC circuit; Possess economize on electricity, cooling double effects simultaneously, technological design thinking such as Fig. 3, Fig. 4
Carrier energy level variations flow process is e
M+ Q
Go into=e
Ne
N=e
p+ hv e
p+ Q=e
Ne
N=e
pMany NP knots of+hv serial connection ... e
p+ Q
Go into=e
M
V wherein
RFor overcoming the power consumption of circuitous resistance, resistance heat is transformed into thermal vibration can become Q afterwards
Go intoA part.
Claims (4)
1, semiconductor LED adds cold junction M heat absorbing sheet.
2, laser instrument NP knot adds cold junction M heat absorbing sheet.
3, electrolytic circuit adds cold junction M heat absorbing sheet.
4, semiconductor cooler is in the application of air-conditioning, refrigeration, and the hot junction changes that Q is output as the output of hv light or electrolysis can be exported, and is recycled.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008100716514A CN101413736A (en) | 2008-08-28 | 2008-08-28 | The development and use of supporting role's energy |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008100716514A CN101413736A (en) | 2008-08-28 | 2008-08-28 | The development and use of supporting role's energy |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101413736A true CN101413736A (en) | 2009-04-22 |
Family
ID=40594389
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|---|---|---|---|
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108571834A (en) * | 2017-03-08 | 2018-09-25 | 杭州三花研究院有限公司 | A kind of heat management system |
| CN110608541A (en) * | 2018-06-14 | 2019-12-24 | 三花控股集团有限公司 | Heat pump system |
| CN111025747A (en) * | 2019-11-15 | 2020-04-17 | Tcl华星光电技术有限公司 | Backlight module and preparation method thereof |
| US11747057B2 (en) | 2018-06-14 | 2023-09-05 | Hangzhou Sanhua Research Institute Co., Ltd. | Heat pump system |
-
2008
- 2008-08-28 CN CNA2008100716514A patent/CN101413736A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108571834A (en) * | 2017-03-08 | 2018-09-25 | 杭州三花研究院有限公司 | A kind of heat management system |
| CN108571834B (en) * | 2017-03-08 | 2021-09-28 | 杭州三花研究院有限公司 | Thermal management system |
| US11167620B2 (en) | 2017-03-08 | 2021-11-09 | Hangzhou Sanhua Research Institute Co., Ltd. | Thermal management system |
| CN110608541A (en) * | 2018-06-14 | 2019-12-24 | 三花控股集团有限公司 | Heat pump system |
| US11747057B2 (en) | 2018-06-14 | 2023-09-05 | Hangzhou Sanhua Research Institute Co., Ltd. | Heat pump system |
| CN111025747A (en) * | 2019-11-15 | 2020-04-17 | Tcl华星光电技术有限公司 | Backlight module and preparation method thereof |
| US11374156B2 (en) | 2019-11-15 | 2022-06-28 | Tcl China Star Optoelectronics Technology Co., Ltd. | Backlight module and manufacturing method of same |
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Open date: 20090422 |