CN101412949A - 一种等离子刻蚀残留物清洗液 - Google Patents
一种等离子刻蚀残留物清洗液 Download PDFInfo
- Publication number
- CN101412949A CN101412949A CNA2007100472661A CN200710047266A CN101412949A CN 101412949 A CN101412949 A CN 101412949A CN A2007100472661 A CNA2007100472661 A CN A2007100472661A CN 200710047266 A CN200710047266 A CN 200710047266A CN 101412949 A CN101412949 A CN 101412949A
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- China
- Prior art keywords
- plasma etching
- ether
- washing liquid
- residual washing
- etching residual
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 238000001020 plasma etching Methods 0.000 title claims abstract description 24
- 239000007788 liquid Substances 0.000 title claims description 24
- 238000004140 cleaning Methods 0.000 title abstract description 25
- 238000005406 washing Methods 0.000 claims abstract description 20
- 150000001412 amines Chemical class 0.000 claims abstract description 17
- 239000002904 solvent Substances 0.000 claims abstract description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 7
- -1 trihydroxyethyl Neutral ammonium fluoride Chemical compound 0.000 claims description 26
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 14
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 10
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 8
- MTHSVFCYNBDYFN-UHFFFAOYSA-N anhydrous diethylene glycol Natural products OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims description 8
- DNIAPMSPPWPWGF-UHFFFAOYSA-N monopropylene glycol Natural products CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 8
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 6
- YAMHXTCMCPHKLN-UHFFFAOYSA-N imidazolidin-2-one Chemical compound O=C1NCCN1 YAMHXTCMCPHKLN-UHFFFAOYSA-N 0.000 claims description 6
- 150000003462 sulfoxides Chemical class 0.000 claims description 6
- 229920000768 polyamine Polymers 0.000 claims description 5
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 claims description 5
- CAAMSDWKXXPUJR-UHFFFAOYSA-N 3,5-dihydro-4H-imidazol-4-one Chemical compound O=C1CNC=N1 CAAMSDWKXXPUJR-UHFFFAOYSA-N 0.000 claims description 4
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims description 4
- 239000002253 acid Substances 0.000 claims description 4
- 150000001408 amides Chemical class 0.000 claims description 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 4
- 229960004063 propylene glycol Drugs 0.000 claims description 4
- 235000013772 propylene glycol Nutrition 0.000 claims description 4
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 claims description 4
- 150000003457 sulfones Chemical class 0.000 claims description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 3
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 3
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 3
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 3
- NBZBKCUXIYYUSX-UHFFFAOYSA-N iminodiacetic acid Chemical compound OC(=O)CNCC(O)=O NBZBKCUXIYYUSX-UHFFFAOYSA-N 0.000 claims description 3
- UKODFQOELJFMII-UHFFFAOYSA-N pentamethyldiethylenetriamine Chemical compound CN(C)CCN(C)CCN(C)C UKODFQOELJFMII-UHFFFAOYSA-N 0.000 claims description 3
- 229960004418 trolamine Drugs 0.000 claims description 3
- CYSGHNMQYZDMIA-UHFFFAOYSA-N 1,3-Dimethyl-2-imidazolidinon Chemical compound CN1CCN(C)C1=O CYSGHNMQYZDMIA-UHFFFAOYSA-N 0.000 claims description 2
- CFQPVBJOKYSPKG-UHFFFAOYSA-N 1,3-dimethylimidazol-2-one Chemical group CN1C=CN(C)C1=O CFQPVBJOKYSPKG-UHFFFAOYSA-N 0.000 claims description 2
- CUVLMZNMSPJDON-UHFFFAOYSA-N 1-(1-butoxypropan-2-yloxy)propan-2-ol Chemical compound CCCCOCC(C)OCC(C)O CUVLMZNMSPJDON-UHFFFAOYSA-N 0.000 claims description 2
- WDQFELCEOPFLCZ-UHFFFAOYSA-N 1-(2-hydroxyethyl)pyrrolidin-2-one Chemical compound OCCN1CCCC1=O WDQFELCEOPFLCZ-UHFFFAOYSA-N 0.000 claims description 2
- ZFPGARUNNKGOBB-UHFFFAOYSA-N 1-Ethyl-2-pyrrolidinone Chemical compound CCN1CCCC1=O ZFPGARUNNKGOBB-UHFFFAOYSA-N 0.000 claims description 2
- RWNUSVWFHDHRCJ-UHFFFAOYSA-N 1-butoxypropan-2-ol Chemical compound CCCCOCC(C)O RWNUSVWFHDHRCJ-UHFFFAOYSA-N 0.000 claims description 2
- MBDUIEKYVPVZJH-UHFFFAOYSA-N 1-ethylsulfonylethane Chemical compound CCS(=O)(=O)CC MBDUIEKYVPVZJH-UHFFFAOYSA-N 0.000 claims description 2
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 claims description 2
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 claims description 2
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims description 2
- WAEVWDZKMBQDEJ-UHFFFAOYSA-N 2-[2-(2-methoxypropoxy)propoxy]propan-1-ol Chemical compound COC(C)COC(C)COC(C)CO WAEVWDZKMBQDEJ-UHFFFAOYSA-N 0.000 claims description 2
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 claims description 2
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 claims description 2
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 claims description 2
- MIMUSZHMZBJBPO-UHFFFAOYSA-N 6-methoxy-8-nitroquinoline Chemical compound N1=CC=CC2=CC(OC)=CC([N+]([O-])=O)=C21 MIMUSZHMZBJBPO-UHFFFAOYSA-N 0.000 claims description 2
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 claims description 2
- KGWDUNBJIMUFAP-KVVVOXFISA-N Ethanolamine Oleate Chemical group NCCO.CCCCCCCC\C=C/CCCCCCCC(O)=O KGWDUNBJIMUFAP-KVVVOXFISA-N 0.000 claims description 2
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 2
- UEEJHVSXFDXPFK-UHFFFAOYSA-O N-dimethylethanolamine Chemical compound C[NH+](C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-O 0.000 claims description 2
- 239000004698 Polyethylene Substances 0.000 claims description 2
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 claims description 2
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 2
- CCAFPWNGIUBUSD-UHFFFAOYSA-N diethyl sulfoxide Chemical compound CCS(=O)CC CCAFPWNGIUBUSD-UHFFFAOYSA-N 0.000 claims description 2
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 claims description 2
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 claims description 2
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 claims description 2
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 claims description 2
- CRVGTESFCCXCTH-UHFFFAOYSA-N methyl diethanolamine Chemical compound OCCN(C)CCO CRVGTESFCCXCTH-UHFFFAOYSA-N 0.000 claims description 2
- PZYDAVFRVJXFHS-UHFFFAOYSA-N n-cyclohexyl-2-pyrrolidone Chemical compound O=C1CCCN1C1CCCCC1 PZYDAVFRVJXFHS-UHFFFAOYSA-N 0.000 claims description 2
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 claims description 2
- 150000007524 organic acids Chemical class 0.000 claims description 2
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 claims description 2
- 229920000573 polyethylene Polymers 0.000 claims description 2
- CIBMHJPPKCXONB-UHFFFAOYSA-N propane-2,2-diol Chemical compound CC(C)(O)O CIBMHJPPKCXONB-UHFFFAOYSA-N 0.000 claims description 2
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 claims description 2
- HHVIBTZHLRERCL-UHFFFAOYSA-N sulfonyldimethane Chemical compound CS(C)(=O)=O HHVIBTZHLRERCL-UHFFFAOYSA-N 0.000 claims description 2
- GTDKXDWWMOMSFL-UHFFFAOYSA-M tetramethylazanium;fluoride Chemical compound [F-].C[N+](C)(C)C GTDKXDWWMOMSFL-UHFFFAOYSA-M 0.000 claims description 2
- ZZVUWRFHKOJYTH-UHFFFAOYSA-N diphenhydramine Chemical compound C=1C=CC=CC=1C(OCCN(C)C)C1=CC=CC=C1 ZZVUWRFHKOJYTH-UHFFFAOYSA-N 0.000 claims 2
- 229910052751 metal Inorganic materials 0.000 abstract description 17
- 239000002184 metal Substances 0.000 abstract description 17
- 229910052782 aluminium Inorganic materials 0.000 abstract description 10
- 229910052710 silicon Inorganic materials 0.000 abstract description 10
- 239000010703 silicon Substances 0.000 abstract description 10
- 239000004065 semiconductor Substances 0.000 abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052755 nonmetal Inorganic materials 0.000 abstract description 5
- 239000007769 metal material Substances 0.000 abstract description 4
- 229910052802 copper Inorganic materials 0.000 abstract description 3
- 238000005530 etching Methods 0.000 abstract description 3
- 238000007654 immersion Methods 0.000 abstract description 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 3
- 239000000377 silicon dioxide Substances 0.000 abstract description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 abstract description 2
- 239000003989 dielectric material Substances 0.000 abstract description 2
- 150000002500 ions Chemical class 0.000 abstract description 2
- 239000007921 spray Substances 0.000 abstract description 2
- 229910052719 titanium Inorganic materials 0.000 abstract description 2
- 239000003599 detergent Substances 0.000 abstract 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000004377 microelectronic Methods 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 230000002000 scavenging effect Effects 0.000 description 26
- 230000003628 erosive effect Effects 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 238000012360 testing method Methods 0.000 description 9
- 239000004411 aluminium Substances 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 230000007797 corrosion Effects 0.000 description 7
- 238000005260 corrosion Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 4
- 229910052731 fluorine Inorganic materials 0.000 description 4
- 239000011737 fluorine Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000002378 acidificating effect Effects 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- PCHPORCSPXIHLZ-UHFFFAOYSA-N diphenhydramine hydrochloride Chemical compound [Cl-].C=1C=CC=CC=1C(OCC[NH+](C)C)C1=CC=CC=C1 PCHPORCSPXIHLZ-UHFFFAOYSA-N 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000002798 polar solvent Substances 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical class ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 description 1
- 208000034189 Sclerosis Diseases 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229920002125 Sokalan® Polymers 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 125000003368 amide group Chemical group 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- CBOIHMRHGLHBPB-UHFFFAOYSA-N hydroxymethyl Chemical compound O[CH2] CBOIHMRHGLHBPB-UHFFFAOYSA-N 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 125000001453 quaternary ammonium group Chemical group 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229960001866 silicon dioxide Drugs 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/28—Organic compounds containing halogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
Abstract
本发明公开了一种等离子刻蚀残留物清洗液,其含有:氟化物、有机胺、溶剂和水。本发明的清洗液清洗能力强,可有效去除金属线(Metal)、通道(Via)和金属垫(Pad)晶圆上的等离子刻蚀残留物,而且对非金属材料(如SiO2、离子增强四乙氧基硅烷二氧化硅(PETEOS)、硅和低介质材料等)和部分金属材料(如Ti、Al和Cu)等有较小的腐蚀速率,可适用于批量浸泡式、批量旋转喷雾式和单片旋转式的清洗方式,具有较大操作窗口,在半导体晶片清洗等微电子领域具有良好的应用前景。
Description
技术领域
本发明涉及半导体制造工艺中的一种清洗液,具体的涉及一种等离子刻蚀残留物清洗液。
背景技术
在半导体元器件制造过程中,光阻层的涂敷、曝光和成像对元器件的图案制造来说是必要的工艺步骤。在图案化的最后(即在光阻层的涂敷、成像、离子植入和蚀刻之后)进行下一工艺步骤之前,光阻层材料的残留物需彻底除去。在掺杂步骤中离子轰击会硬化光阻层聚合物,因此使得光阻层变得不易溶解从而更难于除去。至今在半导体制造工业中一般使用两步法(干法灰化和湿蚀刻)除去这层光阻层膜。第一步利用干法灰化除去光阻层(PR)的大部分。第二步利用缓蚀剂组合物湿蚀刻/清洗工艺除去剩余的光阻层,其具体步骤一般为清洗液清洗/漂洗/去离子水漂洗。在此过程中,只能除去残留的聚合物光阻层和无机物,而不能攻击损害金属层(如铝层)。
现有技术中典型的清洗液有以下几种:胺类清洗液,半水性胺基(非羟胺类)清洗液以及氟化物类清洗液。其中,前两类清洗液需要在高温下清洗,一般在60℃到80℃之间,存在对金属的腐蚀速率较大的问题。而现有的氟化物类清洗液虽然能在较低的温度(室温到50℃)下进行清洗,但仍然存在着各种各样的缺点。例如,不能同时控制金属和非金属基材的腐蚀,清洗后容易造成通道特征尺寸的改变,从而改变半导体结构;蚀刻速率较大,使得清洗操作窗口比较小等。
US 6,828,289公开的清洗液组合物包括:酸性缓冲液、有机极性溶剂、含氟物质和水,且pH值在3~7之间,其中的酸性缓冲液由有机羧酸或多元酸与所对应的铵盐组成,组成比例为10:1至1:10之间。US 5,698,503公开了含氟清洗液,但大量使用乙二醇,其清洗液的粘度与表面张力都很大,从而影响清洗效果。US 5,972,862公开了含氟物质的清洗组合物,其包括含氟物质、无机或有机酸、季铵盐和有机极性溶剂,pH为7~11,由于其清洗效果不是很稳定,存在多样的问题。
因此,为了克服现有清洗液的缺陷,适应新的清洗要求,比如环境更为友善、低缺陷水平、低刻蚀率以及较大操作窗口等,亟待寻求新的清洗液。
发明内容
本发明所要解决的技术问题是为了克服现有的等离子刻蚀残留物清洗液存在腐蚀速率大,不能同时控制金属和非金属的腐蚀,清洗窗口小,清洗能力不足以及清洗效果不稳定等等缺陷,而提供一种具有较强的清洗能力,且腐蚀速率小,可同时控制金属和非金属的腐蚀,清洗窗口大,清洗效果稳定的等离子体刻蚀残留物清洗液。
本发明的等离子体刻蚀残留物清洗液含有氟化物、有机胺、溶剂和水。
其中,所述的氟化物较佳的选自氟化氢、或氟化氢与碱形成的盐,优选氟化氢(HF)、氟化铵(NH4F)、氟化氢铵(NH4HF2)、四甲基氟化铵(N(CH3)4F)和三羟乙基氟化铵(N(CH2OH)3HF)中的一种或多种。所述的碱较佳的选自氨水、季胺氢氧化物和醇胺。所述的氟化物的含量较佳的为质量百分比0.01~20%。
其中,所述的有机胺较佳的为含羟基、氨基和羧基的有机胺中的一种或多种。所述的含羟基的有机胺较佳的为醇胺,如乙醇胺、二乙醇胺、三乙醇胺、异丙醇胺、N,N-二甲基乙醇胺和N-甲基二乙醇胺;所述的含氨基的有机胺较佳的为有机多胺,如二乙烯三胺、五甲基二乙烯三胺和多乙烯多胺;所述含羧基的有机胺较佳的为含氨基的有机酸,如2-氨基乙酸、2-氨基苯甲酸、亚氨基二乙酸,氨三乙酸和乙二胺四乙酸。其中,更加优选五甲基二乙烯三胺、亚氨基二乙酸和三乙醇胺中的一种或多种。所述的有机胺的含量较佳的为质量百分比0.1~35%。有机胺的存在,有利于pH值稳定,提高清洗过程的稳定性和重现性。
其中,所述的溶剂较佳的为亚砜、砜、咪唑烷酮、吡咯烷酮、咪唑啉酮、酰胺和醚中的一种或多种。所述的亚砜较佳的为二甲基亚砜、二乙基亚砜和甲乙基亚砜中的一种或多种;所述的砜较佳的为甲基砜、乙基砜和环丁砜中的一种或多种;所述的咪唑烷酮较佳的为2-咪唑烷酮、1,3-二甲基-2-咪唑烷酮和1,3-二乙基-2-咪唑烷酮中的一种或多种;所述的吡咯烷酮较佳的为N-甲基吡咯烷酮、N-乙基吡咯烷酮、N-环己基吡咯烷酮和N-羟乙基吡咯烷酮中的一种或多种;所述的咪唑啉酮较佳的为1,3-二甲基-2-咪唑啉酮;所述的酰胺较佳的为二甲基甲酰胺和/或二甲基乙酰胺;所述的醚较佳的为乙二醇单烷基醚、二乙二醇单烷基醚、丙二醇单烷基醚、二丙二醇单烷基醚和三丙二醇单烷基醚中的一种或多种。其中,所述的乙二醇单烷基醚较佳的为乙二醇单甲醚、乙二醇单***和乙二醇单丁醚中的一种或多种;所述的二乙二醇单烷基醚较佳的为二乙二醇单甲醚、二乙二醇单***和二乙二醇单丁醚中的一种或多种;所述的丙二醇单烷基醚较佳的为丙二醇单甲醚、丙二醇单***和丙二醇单丁醚中的一种或多种;所述的二丙二醇单烷基醚较佳的为二丙二醇单甲醚、二丙二醇单***和二丙二醇单丁醚中的一种或多种;所述的三丙二醇单烷基醚较佳的为三丙二醇单甲醚。所述的溶剂的含量较佳的为质量百分比35~80%。
其中,所述的水的含量较佳的为质量百分比10~45%。
本发明的清洗液还可包含其它本领域常规添加剂,如金属防腐剂(如铜的防腐剂:苯并三氮唑;又如铝的防腐剂:聚丙烯酸)。
本发明的清洗液经上述成分简单混合均匀即可制得。本发明的清洗液可在较大的温度范围内使用,一般在室温到55℃范围内,并且可应用于各种清洗方式,如批量浸泡式、批量旋转式和单片旋转式。本发明所用试剂及原料均市售可得。
本发明的积极进步效果在于:本发明的清洗液清洗能力强,可对金属线(Metal)、通道(Via)和金属垫(Pad)晶圆进行清洗,有效去除等离子刻蚀残留物,而且对非金属材料(如SiO2、离子增强四乙氧基硅烷二氧化硅(PETEOS)、硅和低介质材料等)和金属材料(如Ti、Al和Cu)等有较小的腐蚀速率,可同时控制金属和非金属的腐蚀。此外,本发明的清洗液可适用于批量浸泡式(wetBatch)、批量旋转喷雾式(Batch-spray)和单片旋转式(single wafer tool)的清洗方式,具有较大操作窗口。
具体实施方式
下面通过实施例的方式进一步说明本发明,但并不因此将本发明限制在所述的实施例范围之中。
实施例1~31
表1给出了本发明的等离子刻蚀残留物清洗液的实施例1~31,按表中配方,将各组分混合均匀,即可制得各实施例的清洗液。
表1 本发明的等离子刻蚀残留物清洗液1~31
效果实施例
表2给出了本发明的清洗液1和2的配方。按照表2配方,将各成分简单均匀混合即可制得各清洗液。
表2 本发明的清洗液1和2的配方及其清洗效果和腐蚀速率
将清洗液1和2对金属线、通道和金属垫进行清洗,并测试各清洗液对金属铝和非金属(PETEOS)的腐蚀速率。
清洗液的金属腐蚀速率测试方法:
1)利用Napson四点探针仪测试4*4cm铝空白硅片的电阻初值(Rs1);
2)将该4*4cm铝空白硅片浸泡在预先已经恒温到35℃的溶液中30分钟;
3)取出该4*4cm铝空白硅片,用去离子水清洗,高纯氮气吹干,再利用Napson四点探针仪测试4*4cm铝空白硅片的电阻值(Rs2);
4)重复第二和第三步再测试一次,电阻值记为Rs3;
5)把上述电阻值和浸泡时间输入到合适的程序可计算出其腐蚀速率。
清洗液的非金属腐蚀速率测试方法:
1)利用Nanospec6100测厚仪测试4*4cm PETEOS硅片的厚度(T1);
2)将该4*4cmPETEOS硅片浸泡在预先已经恒温到35℃的溶液中30分钟;
3)取出该4*4cmPETEOS硅片,用去离子水清洗,高纯氮气吹干,再利用Nanospec6100测厚仪测试4*4cmPETEOS硅片的厚度(T2);
4)重复第二和第三步再测试一次厚度记为T3;
5)把上述厚度值和浸泡时间输入到合适的程序可计算出其腐蚀速率。
表3给出了本发明的清洗液1和2的配方,及其清洗效果和腐蚀速率。
表3 本发明的清洗液1和2的清洗效果和腐蚀速率
从表3中可以看出:本发明的清洗液对半导体制成中所用的金属(如金属铝)和非金属(如PETEOS)基本不会侵蚀,其腐蚀速率均接近或小于半导体业界通常所要求的2埃每分钟。用表2中的清洗液对等离子刻蚀残留物进行清洗发现,其等离子刻蚀残留物均被去除,而且基本没有腐蚀金属和非金属。
Claims (12)
1.一种等离子体刻蚀残留物清洗液,其特征在于含有:氟化物、有机胺、溶剂和水。
2.如权利要求1所述的等离子体刻蚀残留物清洗液,其特征在于:所述的氟化物选自氟化氢、氟化铵、氟化氢铵、四甲基氟化铵和三羟乙基氟化铵中的一种或多种。
3.如权利要求1所述的等离子体刻蚀残留物清洗液,其特征在于:所述的氟化物的含量为质量百分比0.01~20%。
4.如权利要求1所述的等离子体刻蚀残留物清洗液,其特征在于:所述的有机胺为含羟基、氨基和羧基的有机胺中的一种或多种。
5.如权利要求4所述的等离子体刻蚀残留物清洗液,其特征在于:所述的含羟基的有机胺为醇胺;所述的含氨基的有机胺为有机多胺;所述含羧基的有机胺为含氨基的有机酸。
6.如权利要求5所述的等离子体刻蚀残留物清洗液,其特征在于:所述的醇胺为乙醇胺、二乙醇胺、三乙醇胺、异丙醇胺、N,N-二甲基乙醇胺和N-甲基二乙醇胺中的一种或多种;所述的有机多胺为二乙烯三胺、五甲基二乙烯三胺和多乙烯多胺中的一种或多种;所述的含氨基的有机酸为2-氨基乙酸、2-氨基苯甲酸、亚氨基二乙酸、氨三乙酸和乙二胺四乙酸中的一种或多种。
7.如权利要求1所述的等离子体刻蚀残留物清洗液,其特征在于:所述的有机胺的含量为质量百分比0.1~35%。
8.如权利要求1所述的等离子体刻蚀残留物清洗液,其特征在于:所述的溶剂为亚砜、砜、咪唑烷酮、吡咯烷酮、咪唑啉酮、酰胺和醚中的一种或多种。
9.如权利要求8所述的等离子体刻蚀残留物清洗液,其特征在于:所述的亚砜为二甲基亚砜、二乙基亚砜和甲乙基亚砜中的一种或多种;所述的砜为甲基砜、乙基砜和环丁砜中的一种或多种;所述的咪唑烷酮为2-咪唑烷酮、1,3-二甲基-2-咪唑烷酮和1,3-二乙基-2-咪唑烷酮中的一种或多种;所述的吡咯烷酮为N-甲基吡咯烷酮、N-乙基吡咯烷酮、N-环己基吡咯烷酮和N-羟乙基吡咯烷酮中的一种或多种;所述的咪唑啉酮为1,3-二甲基-2-咪唑啉酮;所述的酰胺为二甲基甲酰胺和/或二甲基乙酰胺;所述的醚为乙二醇单烷基醚、二乙二醇单烷基醚、丙二醇单烷基醚、二丙二醇单烷基醚和三丙二醇单烷基醚中的一种或多种。
10.如权利要求9所述的等离子体刻蚀残留物清洗液,其特征在于:所述的乙二醇单烷基醚为乙二醇单甲醚、乙二醇单***和乙二醇单丁醚中的一种或多种;所述的二乙二醇单烷基醚为二乙二醇单甲醚、二乙二醇单***和二乙二醇单丁醚中的一种或多种;所述的丙二醇单烷基醚为丙二醇单甲醚、丙二醇单***和丙二醇单丁醚中的一种或多种;所述的二丙二醇单烷基醚为二丙二醇单甲醚、二丙二醇单***和二丙二醇单丁醚中的一种或多种;所述的三丙二醇单烷基醚为三丙二醇单甲醚。
11.如权利要求1所述的等离子体刻蚀残留物清洗液,其特征在于:所述的溶剂的含量为质量百分比35~80%。
12.如权利要求1所述的等离子体刻蚀残留物清洗液,其特征在于:所述的水的含量为质量百分比10~45%。
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EP1690135A4 (en) * | 2003-12-02 | 2007-05-09 | Advanced Tech Materials | METHOD AND CHEMICAL FOR REMOVING PHOTOSENSITIVE RESIN, ANTI-REFLECTIVE COATING OR FILLING MATERIAL |
US8030263B2 (en) * | 2004-07-01 | 2011-10-04 | Air Products And Chemicals, Inc. | Composition for stripping and cleaning and use thereof |
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WO2010025624A1 (zh) * | 2008-09-05 | 2010-03-11 | 安集微电子科技(上海)有限公司 | 一种等离子刻蚀残留物清洗液 |
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CN108255025A (zh) * | 2016-12-28 | 2018-07-06 | 安集微电子(上海)有限公司 | 一种清洗液 |
CN107229192B (zh) * | 2017-07-25 | 2019-05-10 | 上海新阳半导体材料股份有限公司 | 一种含氟等离子刻蚀残留物清洗液、其制备方法和应用 |
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CN107229192A (zh) * | 2017-07-25 | 2017-10-03 | 上海新阳半导体材料股份有限公司 | 一种含氟等离子刻蚀残留物清洗液、其制备方法和应用 |
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WO2009052706A1 (fr) | 2009-04-30 |
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