CN101393949B - LED encapsulation construction and use thereof - Google Patents
LED encapsulation construction and use thereof Download PDFInfo
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- CN101393949B CN101393949B CN2007101528556A CN200710152855A CN101393949B CN 101393949 B CN101393949 B CN 101393949B CN 2007101528556 A CN2007101528556 A CN 2007101528556A CN 200710152855 A CN200710152855 A CN 200710152855A CN 101393949 B CN101393949 B CN 101393949B
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Abstract
The invention provides an encapsulation structure of a light emitting diode and the application thereof, wherein the light emitting diode includes a first semiconductor conducting layer formed on a basal plate, an active layer formed on the first semiconductor conducting layer in the form of Multi-Quantum-Well, and a second semiconductor conducting layer formed on the active layer. A plurality of particles formed by at least one alloplasm material are distributed between the first semiconductor conducting layer and the active layer, thereby forming a plurality of irregular and undulate Multi-Quantum-Wells. The light emitting diode component or the encapsulation structure is applied to the related electronic installation, and the light source thereof has higher light efficiency, so that the use efficiency of the related electronic installation is higher.
Description
Technical field
The present invention relates to a kind of light-emitting diode (Light-Emitting Diode; LED) encapsulating structure and application thereof, particularly wherein the multi-layer quantum well (Multi-Quantum-Well) of employed light-emitting diode has preferable luminous efficiency.
Background technology
Because only the sending and be of light-emitting diode (LED) to any direction emission light beam, so LED luminous efficiency (Efficiency) is represented by following equation by the active layers of inside:
Eeff＝Ei(internal)*Ee(external)
Wherein Ei is meant the luminous efficiency of being sent by the active layers of inside, and Ee is meant that the luminous efficiency of exterior light extraction, Eeff are meant whole luminous efficiency.
In the known technology, in order to improve the LED luminous efficiency, concentrate on mostly the luminous efficiency of improving the exterior light extraction, so as to improving the luminous efficiency of LED.For example U.S. Patent Publication No. US20050082562A1, U.S. Patent Publication No. US20050277218A1, U.S. Patent Publication No. US20040104672, United States Patent (USP) notification number US6900473 and US67777871.In aforementioned each prior art, all are the surfactions at LED, by the irregular surface (for example with etching technique) that forms the LED outside, therefore the light of avoiding LED can improve the luminous efficiency Ee of exterior light extraction in the chip internal total reflection.According to existing technology, it is about 80% that Ee has reached, and this result has approached to physics limit.
In view of the exterior light of present light-emitting diode (LED) extraction efficient Ee has reached approximately 80%, approach to physics limit, yet the active layers luminous efficiency Ei of LED inside only reaches about 40% but.And according to aforesaid equation, improve inner active layers luminous efficiency Ei and can effectively improve LED whole lighting efficiency Eeff.For this reason, No. 96104691 TaiWan, China patent application case that the present patent application people proposes has a plurality of irregular and multi-layer quantum well constructions (uneven Multi-Quantum-Well) that just rise and fall with the active layers formation of LED, the bulk area that makes irregular multi-layer quantum well than the bulk area of the multi-layer quantum well of traditional planar for big, by improving the luminous efficiency Ei that inner active layers is sent, make the luminous efficiency Eeff of whole LED increase.
Summary of the invention
The objective of the invention is to use LED, make the LED encapsulating structure, be applied in the associated electrical product,, make the associated electrical product have higher brightness, and make its effective utilization higher as light source with a plurality of irregular and multi-layer quantum well constructions that height rises and falls.
For achieving the above object, technical solution of the present invention is:
A kind of package structure for LED includes a bearing, at least one light-emitting diode component is placed on this bearing and an encapsulating material coats this light-emitting diode component; This light-emitting diode component comprises:
One first electrode;
One substrate is formed on this first electrode;
One first semiconductor conducting layer is formed on this substrate;
One active layers, with have a plurality of irregular and the height undulations the multi-layer quantum well be formed on this first semiconductor conducting layer;
One second semiconductor conducting layer is formed on this active layers;
One transparency conducting layer is formed on this second semiconductor conducting layer; And
One second electrode is formed on this transparency conducting layer; Perhaps,
This light-emitting diode component comprises:
One substrate;
One first semiconductor conducting layer is formed on this substrate;
One first electrode is formed at the side on this first semiconductor layer;
One active layers is formed at the opposite side on this first semiconductor conducting layer, have a plurality of irregular and the height undulations the multi-layer quantum well;
One second semiconductor conducting layer is formed on this active layers;
One transparency conducting layer is formed on this second semiconductor conducting layer; And
One second electrode is formed on this transparency conducting layer;
Wherein, the formed a plurality of particulates of at least a dissimilar materials intersperse among between this first semiconductor conducting layer and this active layers, by, form the multi-layer quantum well that this has a plurality of irregular and shapes that height rises and falls.
Advantage of the present invention is:
A kind of light-emitting diode provided by the invention (LED) encapsulating structure, wherein employed LED has higher luminous efficiency, and is better so as to the light bud shape that makes encapsulating structure, and makes the effective utilization of encapsulating structure higher.
Provided by the invention a kind of be the backlight module of light source with light-emitting diode (LED), wherein employed LED has higher luminous efficiency, and makes the effective utilization of backlight module higher.
Provided by the invention a kind of be the display of light source with light-emitting diode (LED), wherein employed LED has higher luminous efficiency, and makes the effective utilization of display higher.
Provided by the invention a kind of be the portable computer of display light source with light-emitting diode (LED), wherein employed LED has higher luminous efficiency, and makes the effective utilization of display higher.
Provided by the invention a kind of be the projector equipment of light source with light-emitting diode (LED), wherein employed LED has higher luminous efficiency, and makes the effective utilization of projector equipment higher.
Provided by the invention a kind of be the back projection TV of light source with light-emitting diode (LED), wherein employed LED has higher luminous efficiency, and makes the effective utilization of back projection TV higher.
Provided by the invention a kind of be the digital electronic device of light source with light-emitting diode (LED), wherein employed LED has higher luminous efficiency, and makes the effective utilization of digital electronic device higher.
Provided by the invention a kind of be that the optical communication of light source is a system with light-emitting diode (LED), wherein employed LED has higher luminous efficiency, is that the usefulness of system is higher and make optical communication.
A kind of light-emitting diode provided by the invention (LED) light fixture, wherein employed LED has higher luminous efficiency, and makes the usefulness of light fixture higher.
Provided by the invention a kind of be the Vehicular lamp of light source with light-emitting diode (LED), wherein employed LED has higher luminous efficiency, and makes the usefulness of Vehicular lamp higher.
Provided by the invention a kind of be the traffic signals light fixture of light source with light-emitting diode (LED), wherein employed LED has higher luminous efficiency, and makes the usefulness of traffic signals light fixture higher.
Provided by the invention a kind of be the traffic lines road indicator light of light source with light-emitting diode (LED), wherein employed LED has higher luminous efficiency, and makes the usefulness of traffic lines road indicator light higher.
Provided by the invention a kind of be the traffic marking device of light source with LED, wherein employed LED has higher luminous efficiency, and makes the usefulness of traffic marking device higher.
Description of drawings
Figure 1A is a cutaway view, is first preferred embodiment and second preferred embodiment that proposes according to the present invention, is a kind of LED encapsulating structure;
Figure 1B is a cutaway view, is the 3rd preferred embodiment and the 4th preferred embodiment that proposes according to the present invention, is a kind of LED encapsulating structure;
Fig. 2 is a schematic diagram, is the 5th preferred embodiment that proposes according to the present invention, is a kind of direct type backlight module with LED;
Fig. 3 is a schematic diagram, is the 5th preferred embodiment that proposes according to the present invention, is a kind of side light type back light module with LED;
Fig. 4 is a schematic diagram, is the 6th preferred embodiment that proposes according to the present invention, is a kind of display with LED;
Fig. 5 is a schematic diagram, is the 7th preferred embodiment that proposes according to the present invention, is a kind of portable computer with LED;
Fig. 6 is a schematic diagram, is the 8th preferred embodiment that proposes according to the present invention, is a kind of projector equipment with LED;
Fig. 7 is a schematic diagram, is the 9th preferred embodiment that proposes according to the present invention, is a kind of back projection TV with LED;
Fig. 8 is a schematic diagram, is the tenth preferred embodiment that proposes according to the present invention, for the optical communication of a kind of LED of having is a system;
Fig. 9 is a schematic diagram, is the 11 preferred embodiment that proposes according to the present invention, is a kind of light fixture with LED;
Figure 10 A and Figure 10 B are the 12 preferred embodiments that proposes according to the present invention, are a kind of Vehicular lamp with LED;
Figure 11 is a schematic diagram, is the 13 preferred embodiment that proposes according to the present invention, is a kind of traffic signals light fixture with LED;
Figure 12 A and Figure 12 B are the 14 preferred embodiments that proposes according to the present invention, are a kind of traffic lines road indicator light with LED;
Figure 13 is the 15 preferred embodiment that proposes according to the present invention, is a kind of traffic marking device with LED.
The primary clustering symbol description
LED encapsulating structure 1A, 1B
Bearing 111
First semiconductor conducting layer 114
Multi-layer quantum well 115
Second semiconductor conducting layer 116
Encapsulating material 119
Wavelength Conversion formula scattering particles 1191
Direct type backlight module 2
Light source film group 23
Side light type back light module 3
Light source film group 33
Portable computer 5
Basic computer 51
Input unit 52
Display 53
Panel module 531
Optical communication is a system 8
Fiber optic network transmission channel 83
One end tool, one joint 92
Traffic signals light fixture 11
Traffic lines road indicator light 12
Solar panels 1211
Electric storage means 1213
Indicate body 132
Embodiment
Because the present invention discloses a kind of light-emitting diode (LED) encapsulating structure and application thereof, the LED principle of wherein being utilized knows usually that for correlative technology field has the knowledgeable can understand, so with hereinafter explanation, no longer do complete description.Simultaneously, graphic with what hereinafter contrasted, be to express the structural representation relevant with feature of the present invention, also do not need to give statement earlier at this according to the complete drafting of actual size.
At first seeing also Figure 1A, is first preferred embodiment that the present invention proposes, and is the generalized section of a kind of blue light-emitting diode (LED) encapsulating structure 1A.Blue-ray LED encapsulating structure 1A includes a bearing 111, and ((LED) 11 is placed on the bearing 111 and an encapsulating material 119 coats this blue-ray LED 11 at least one blue light-emitting diode.And when blue-ray LED if quantity more for a long time, array mode that can also various kenels is arranged, so as to improving the brightness and the light uniformity.
Above-mentioned blue-ray LED 11 comprises first electrode 112, substrate 113, first semiconductor conducting layer 114, active layers 115, second semiconductor conducting layer 116, transparency conducting layer 117 and second electrode 118.
First semiconductor conducting layer 114 is formed at substrate 113 tops, it is the semiconductor layer of a N-Type, its material is the III-V compound semiconductor, wherein III family material can be aluminium (Al), gallium (Ga) or indium materials such as (In), and V family material can be nitrogen (N), phosphorus (P) or arsenic materials such as (As).
Second semiconductor conducting layer 116 is formed at active layers 115 tops, it is the semiconductor of a P-Type, its material is the III-V compound semiconductor, wherein III family material can be aluminium (Al), gallium (Ga) or indium materials such as (In), and V family material can be nitrogen (N), phosphorus (P) or arsenic materials such as (As); One transparency conducting layer 117, be formed at second semiconductor conducting layer, 116 tops, its material can be materials such as Ni/Au, NiO/Au, Ta/Au, tungsten nitride titanium (WTiN), titanium nitride (TiN), tin indium oxide, chromium oxide tin, antimony tin, zinc oxide aluminum or zinc-tin oxide.
Be stressed that especially, form among the present invention and have a plurality of irregular and formed active layers 115 of multi-layer quantum well that just rise and fall, be earlier the formed a plurality of particulates of a plurality of dissimilar materialss arbitrarily to be interspersed among on first semiconductor conducting layer 114, to have the active layers 115 of a plurality of irregular and multi-layer quantum wells that height rises and falls by growing up.Therefore, at first semiconductor conducting layer 114 of the present invention and have a plurality of irregular and 115 of formed active layers of multi-layer quantum well that height rises and falls and have at least a dissimilar materials to have (but not being shown in the accompanying drawing), the formed a plurality of particulates of above-mentioned dissimilar materials, its material can be II family, III family, V family, VI family, III-V compounds of group, II-V compounds of group or II-VI compounds of group etc. all can, get final product so long as be different from the dissimilar materials of first semiconductor conducting layer 114.
In the foregoing description, the multi-layer quantum well of active layers 115 is formed by materials such as nitride, phosphide, arsenide or phosphorus arsenides, its employed material is the III-V compound semiconductor, wherein III family material can be aluminium (Al), gallium (Ga) or indium materials such as (In), and V family material can be nitrogen (N), phosphorus (P) or arsenic materials such as (As).Wherein multi-layer quantum well and the ratio of width to height of cross section height undulations irregular for each be between be about 3: 1～between 1: 10, its surface roughness Ra is between being about 0.5～50 how between the rice, and wherein how be about with 30～40 be preferable between the rice to roughness Ra value.
The present invention further proposes second preferred embodiment, be a kind of white light emitting diode (LED) encapsulating structure, please continue with reference to Figure 1A, it is characterized in that: comprise a plurality of wavelength Conversion formula scattering particless 1191 (wave-length converting scatters) in the encapsulating material 119, yellow fluorescent powder for example, the blue light that is emitted to fluorescent material by blue light-emitting diode (LED) 11 is by the scattering of fluorescent material institute, and the blue light of part is absorbed by yellow fluorescent powder and penetrates with gold-tinted, by, blue light and gold-tinted penetrate because of the mixed light effect forms white light.
At first seeing also Figure 1B, is the 3rd preferred embodiment that the present invention proposes, and is the generalized section of a kind of blue light-emitting diode (LED) encapsulating structure 1B.Blue-ray LED encapsulating structure 1B includes a bearing 111, and at least one blue light-emitting diode (LED) 11 is placed on the bearing 111 and an encapsulating material 119 coats this blue-ray LED 11.And when blue-ray LED if quantity more for a long time, array mode that can also various kenels is arranged, so as to improving the brightness and the light uniformity.
Above-mentioned blue-ray LED 11 comprises substrate 113, first semiconductor conducting layer 114, first electrode 112, active layers 115, second semiconductor conducting layer 116, transparency conducting layer 117 and second electrode 118.
The material of substrate 113 can be that sapphire, gallium nitride (GaN), aluminium nitride (AlN), carborundum (SiC), GaAs (GaAs), gallium phosphide (GaP), silicon (Si), germanium (Ge), zinc oxide (ZnO), magnesium oxide (MgO) or LAO, LGO or glass material etc. all can.
First semiconductor conducting layer 114 is formed at substrate 113 tops, it is the semiconductor layer of a N-Type, its material is the III-V compound semiconductor, wherein III family material can be aluminium (Al), gallium (Ga) or indium materials such as (In), and V family material can be nitrogen (N), phosphorus (P) or arsenic materials such as (As).
Second semiconductor conducting layer 116 is formed at active layers 115 tops, it is the semiconductor of a P-Type, its material is the III-V compound semiconductor, wherein III family material can be aluminium (Al), gallium (Ga) or indium materials such as (In), and V family material can be nitrogen (N), phosphorus (P) or arsenic materials such as (As).
Be stressed that especially, the active layers 115 that has a plurality of irregular and multi-layer quantum wells that height rises and falls among the present invention, be earlier the formed a plurality of particulates of a plurality of dissimilar materialss arbitrarily to be interspersed among on first semiconductor conducting layer 114, to have a plurality of irregular and multi-layer quantum wells that just rise and fall by growing up.Therefore, at first semiconductor conducting layer 114 of the present invention and have a plurality of irregular and 115 of formed active layers of multi-layer quantum well that height rises and falls and have at least a dissimilar materials to have (but not being shown in the accompanying drawing), the formed a plurality of particulates of above-mentioned dissimilar materials, its material can be II family, III family, V family, VI family, III-V compounds of group, II-V compounds of group or II-VI compounds of group etc. all can, get final product so long as be different from the dissimilar materials of first semiconductor conducting layer 114.
Multi-layer quantum well in the foregoing description is formed by materials such as nitride, phosphide, arsenide or phosphorus arsenides, its employed material is the III-V compound semiconductor, wherein III family material can be aluminium (Al), gallium (Ga) or indium materials such as (In), and V family material can be nitrogen (N), phosphorus (P) or arsenic materials such as (As).Wherein multi-layer quantum well and the ratio of width to height of cross section height undulations irregular for each be between be about 3: 1～between 1: 10, its surface roughness Ra is between being about 0.5～50 how between the rice, and wherein how be about with 30～40 be preferable between the rice to roughness Ra value.
The present invention further proposes the 4th preferred embodiment, be a kind of white light emitting diode (LED) encapsulating structure, please continue with reference to Figure 1B, it is characterized in that: comprise a plurality of wavelength Conversion formula scattering particless 1191 (wave-length converting scatters) in the encapsulating material 119, yellow fluorescent powder for example, the blue light that is emitted to fluorescent material by blue light-emitting diode (LED) 11 is by the scattering of fluorescent material institute, and the blue light of part is absorbed by yellow fluorescent powder and penetrates with gold-tinted, by, blue light and gold-tinted penetrate because of the mixed light effect forms white light.
See also Fig. 2 and Fig. 3, for the present invention further proposes the 5th preferred embodiment, according to light-emitting diode (LED) or light-emitting diode (LED) encapsulating structure proposed by the invention, can further use backlight module, this backlight module can be direct type backlight module 2 (as Fig. 2) or side light type back light module 3 (as Fig. 3), at least comprise a housing 21 with opening, be arranged at the optical diffusion sheet 22 of open side and be arranged at light source module 23 in the housing, light source module 23 includes a plurality of LED or LED encapsulating structure; And the feature of wherein employed LED or LED encapsulating structure wherein arbitrary embodiment of first preferred embodiment to the, four preferred embodiments is described as described above.
See also Fig. 4, the present invention further proposes the 6th preferred embodiment, according to LED or LED encapsulating structure proposed by the invention, can further be applied to display 4, this display 4 can be LCD or touch control display, at least comprise a panel module 41, a driving circuit module (not icon) and a backlight module (please refer to Fig. 2 and Fig. 3), the light source module that backlight module uses includes the encapsulating structure of a plurality of LED or LED; And the feature of wherein employed LED or LED encapsulating structure wherein arbitrary embodiment of first preferred embodiment to the, four preferred embodiments is described as described above.
See also Fig. 5, the present invention further proposes the 7th preferred embodiment, according to LED or LED encapsulating structure proposed by the invention, can further use portable computer 5, this portable computer 5 includes a basic computer 51 at least, one input unit 52 and a display 53, display 53 is selected from one of them by LCD and group that touch control display constitutes, display 53 comprises a panel module 531 at least, a driving circuit module (not icon) and a backlight module (please refer to Fig. 2 and Fig. 3), the light source module that backlight module uses includes a plurality of LED or LED encapsulating structure; And the feature of wherein employed LED or LED encapsulating structure wherein arbitrary embodiment of first preferred embodiment to the, four preferred embodiments is described as described above.
See also Fig. 6, the present invention further proposes the 8th preferred embodiment, according to LED or LED encapsulating structure proposed by the invention, can further use projector equipment 6, this projector equipment 6 comprises a housing at least, is placed in an one drive circuit device and a lens assembly 61 in the housing, lens assembly 61 comprises a light source module 611, a lens module 612 and focus module 613 subsequently at least, and light source module 611 includes a plurality of LED or LED encapsulating structure; And the feature of wherein employed LED or LED encapsulating structure wherein arbitrary embodiment of first preferred embodiment to the, four preferred embodiments is described as described above.
See also Fig. 7, the present invention further proposes the 9th preferred embodiment, according to LED or LED encapsulating structure proposed by the invention, can further use back projection TV 7, driving circuit module, a projector equipment 73 and an optical reflection unit 74 that this back projection TV 7 comprises a casing 71 at least, be arranged at a screen 72 of casing 71 front ends, be placed in the casing reflex to screen 72 in order to the image that projector equipment 73 is projected.Projector equipment 74 comprises at least one light source module, a lens module and focus module subsequently, and it closes relatively is can be with reference to the 6th preferred embodiment shown in Figure 6.Wherein light source module includes a plurality of LED or LED encapsulating structure, and the feature of wherein employed LED or LED encapsulating structure wherein arbitrary embodiment of first preferred embodiment to the, four preferred embodiments is described as described above.
See also Fig. 8, the present invention further proposes the tenth preferred embodiment, according to LED or LED encapsulating structure proposed by the invention, can further use optical communication is system 8, and this optical communication is that system 8 comprises a light emission module 81, a signal generation module 82, a fiber optic network transmission channel 83 and at least one Optical Receivers 84.It is characterized in that light emission module 81 includes a plurality of LED or LED encapsulating structure, and the feature of wherein employed LED or LED encapsulating structure wherein arbitrary embodiment of first preferred embodiment to the, four preferred embodiments is described as described above.
See also Fig. 9, the present invention further proposes the 11 preferred embodiment, and according to LED or LED encapsulating structure proposed by the invention, further application luminaire 9, and this light fixture comprises a housing 91; One circuit substrate (not shown) is placed in the housing 91, is provided with pair of electrodes and a plurality of LED or LED encapsulating structure; One end of housing 91 has joint 92, and for the light fixture socket 93 that operationally is bonded to the outside, and conducting is to the pair of electrodes of this circuit substrate.And the feature of wherein employed LED or LED encapsulating structure wherein arbitrary embodiment of first preferred embodiment to the, four preferred embodiments is described as described above.
See also Figure 10 A and Figure 10 B, the present invention further proposes the 12 preferred embodiment, according to LED or LED encapsulating structure proposed by the invention, can further be applied to Vehicular lamp 10, the light transmission lampshade 102 that this Vehicular lamp 10 comprises a hollow shell block 101 at least and is arranged at shell block 101 open window, there are a lamp socket 1011, one circuit boards 1012 and a plurality of LED or LED encapsulating structure 1013 to be arranged at lamp socket 1011 in the housing; And the feature of wherein employed LED or LED encapsulating structure wherein arbitrary embodiment of first preferred embodiment to the, four preferred embodiments is described as described above.
See also Figure 11, the present invention further proposes the 13 preferred embodiment, according to LED or LED encapsulating structure proposed by the invention, can further use traffic signals light fixture 11, this traffic signals light fixture 11 comprises that a hollow housing 111, one sides are provided with an open window 112; One light transmission lampshade 1121 is disposed at open window 112; One light source module 1111 is arranged in the hollow housing 111, includes the LED of a plurality of different wave lengths or the encapsulating structure of LED; And a control loop (not shown), be equipped in the housing 111 and be connected to light source module 1111, make that these LED's of control partly or entirely are presented in light transmission lampshade 1121 with colour mixture or monochrome.And the feature of wherein employed LED or LED encapsulating structure wherein arbitrary embodiment of first preferred embodiment to the, four preferred embodiments is described as described above.
See also Figure 12 A and Figure 12 B; the present invention further proposes the 14 preferred embodiment; according to LED or LED encapsulating structure proposed by the invention; can further use traffic lines road indicator light 12; this traffic lines road indicator light 12; mainly be installing one solar panels 1211 in a transparency protected housing 121; one charging circuit 1212; one electric storage means 1213; an one automatic illuminating circuit 1214 and a light source module 1215; wherein solar panels 1211 are to be installed in up in the transparency protected housing 121; convert thereof into electric energy by absorbing solar energy; and through charging circuit 1212 and to electric storage means 1213 chargings; automatically illuminating circuit 1214 is to be connected to solar charging circuit 1212 and the light source module 1215 that is installed in the housing 121, and then makes light source module 1215 luminous.Light source module 1215 includes a plurality of LED or LED encapsulating structure, and the feature of the encapsulating structure of wherein employed LED or LED wherein arbitrary embodiment of first preferred embodiment to the, four preferred embodiments as described above is described.
See also Figure 13, the present invention further proposes the 15 preferred embodiment, according to LED proposed by the invention or LED encapsulating structure, can further use traffic marking device 13, this traffic marking device comprises a supporter 131 and at least one sign body 132 that is arranged on supporter at least.Wherein indicating body 132 comprises: a lamp box (not shown) is to make with preliminary dimension to form, and has a transparent surface; One light penetrating panel 1321 is arranged at the transparent surface of lamp box, and its surface is provided with the sign of predetermined literal or pattern; One light source module (not icon) is located in this lamp box, and towards light penetrating panel, projection from inside to outside makes this sign bright with preset distance; And a supply unit (not icon), in order to supply with the required electric power of these light source modules; And the feature of wherein employed LED or LED encapsulating structure wherein arbitrary embodiment of first preferred embodiment to the, four preferred embodiments is described as described above.
The present invention further proposes the 16 preferred embodiment, according to LED or LED encapsulating structure proposed by the invention, further Applied Digital electronic installation (not icon), this digital electronic device can be photocopier, scanning machine, facsimile machine, office's multitask affairs machine, LCD TV, e-advertising billboard, electronics Game device, PDA(Personal Digital Assistant) or mobile communication device etc., it is characterized in that having a display.This digital electronic device has a light source module so that the light source of display to be provided, light source module includes a plurality of LED or LED encapsulating structure, and the feature of wherein employed LED or LED encapsulating structure wherein arbitrary embodiment of first preferred embodiment to the, four preferred embodiments is described as described above.
The above is preferred embodiment of the present invention only, is not in order to limit interest field of the present invention; Simultaneously above description should be understood and be implemented for the special personage who knows the present technique field, so other does not break away from the equivalence of being finished under the disclosed spirit and change or modification, all should be included in the protection range of claim.
Claims (26)
1. package structure for LED comprises a bearing, at least one light-emitting diode component is placed on this bearing and an encapsulating material coats this light-emitting diode component; It is characterized in that this light-emitting diode component comprises:
One first electrode;
One substrate is formed on this first electrode;
One first semiconductor conducting layer is formed on this substrate;
One active layers, with have a plurality of irregular and the height undulations the multi-layer quantum well be formed on this first semiconductor conducting layer;
One second semiconductor conducting layer is formed on this active layers;
One transparency conducting layer is formed on this second semiconductor conducting layer; And
One second electrode is formed on this transparency conducting layer;
Wherein, the formed a plurality of particulates of at least a dissimilar materials intersperse among between this first semiconductor conducting layer and this active layers, by this, form the multi-layer quantum well that this has a plurality of irregular and shapes that height rises and falls.
2. package structure for LED includes a bearing, at least one light-emitting diode component is placed on this bearing and an encapsulating material coats this light-emitting diode component; It is characterized in that this light-emitting diode component comprises:
One substrate;
One first semiconductor conducting layer is formed on this substrate;
One first electrode is formed at the side on this first semiconductor layer;
One active layers is formed at the opposite side on this first semiconductor conducting layer, have a plurality of irregular and the height undulations the multi-layer quantum well;
One second semiconductor conducting layer is formed on this active layers;
One transparency conducting layer is formed on this second semiconductor conducting layer; And
One second electrode is formed on this transparency conducting layer;
Wherein, the formed a plurality of particulates of at least a dissimilar materials intersperse among between this first semiconductor conducting layer and this active layers, by this, form the multi-layer quantum well that this has a plurality of irregular and shapes that height rises and falls.
3. one kind is the backlight module of light source with the light-emitting diode, be selected from one of them of direct type backlight module and group that side light type back light module constitutes, at least comprise a housing with opening, be arranged at the optical diffusion sheet of this open side and be arranged at light source module in this housing, this light source module includes the encapsulating structure of a plurality of light-emitting diode components or this light-emitting diode component; It is characterized in that this light-emitting diode component comprises:
One first electrode;
One substrate is formed on this first electrode;
One first semiconductor conducting layer is formed on this substrate;
One active layers, with have a plurality of irregular and the height undulations the multi-layer quantum well be formed on this first semiconductor conducting layer;
One second semiconductor conducting layer is formed on this active layers;
One transparency conducting layer is formed on this second semiconductor conducting layer; And
One second electrode is formed on this transparency conducting layer;
Wherein, the formed a plurality of particulates of at least a dissimilar materials intersperse among between this first semiconductor conducting layer and this active layers, by this, form the multi-layer quantum well that this has a plurality of irregular and shapes that height rises and falls.
4. one kind is the backlight module of light source with the light-emitting diode, be selected from one of them of direct type backlight module and group that side light type back light module constitutes, at least comprise a housing with opening, be arranged at the optical diffusion sheet of this open side and be arranged at light source module in this housing, this light source module includes the encapsulating structure of a plurality of light-emitting diode components or this light-emitting diode component; It is characterized in that this light-emitting diode component comprises:
One substrate;
One first semiconductor conducting layer is formed on this substrate;
One first electrode is formed at the side on this first semiconductor layer;
One active layers is formed at the opposite side on this first semiconductor conducting layer, have a plurality of irregular and the height undulations the multi-layer quantum well;
One second semiconductor conducting layer is formed on this active layers;
One transparency conducting layer is formed on this second semiconductor conducting layer; And
One second electrode is formed on this transparency conducting layer;
Wherein, the formed a plurality of particulates of at least a dissimilar materials intersperse among between this first semiconductor conducting layer and this active layers, by this, form the multi-layer quantum well that this has a plurality of irregular and shapes that height rises and falls.
5. one kind is the display of light source with the light-emitting diode, be selected from one of them by LCD and group that touch control display constitutes, at least comprise a panel module, driving circuit module and a backlight module, the light source module that this backlight module uses includes the encapsulating structure of a plurality of light-emitting diode components or this light-emitting diode component; It is characterized in that this light-emitting diode component comprises:
One first electrode;
One substrate is formed on this first electrode;
One first semiconductor conducting layer is formed on this substrate;
One active layers, with have a plurality of irregular and the height undulations the multi-layer quantum well be formed on this first semiconductor conducting layer;
One second semiconductor conducting layer is formed on this active layers;
One transparency conducting layer is formed on this second semiconductor conducting layer; And
One second electrode is formed on this transparency conducting layer;
Wherein, the formed a plurality of particulates of at least a dissimilar materials intersperse among between this first semiconductor conducting layer and this active layers, by this, form the multi-layer quantum well that this has a plurality of irregular and shapes that height rises and falls.
6. one kind is the display of light source with the light-emitting diode, be selected from one of them by LCD and group that touch control display constitutes, at least comprise a panel module, driving circuit module and a backlight module, the light source module that this backlight module uses includes the encapsulating structure of a plurality of light-emitting diode components or this light-emitting diode component; It is characterized in that this light-emitting diode component comprises:
One substrate;
One first semiconductor conducting layer is formed on this substrate;
One first electrode is formed at the side on this first semiconductor layer;
One active layers is formed at the opposite side on this first semiconductor conducting layer, have a plurality of irregular and the height undulations the multi-layer quantum well;
One second semiconductor conducting layer is formed on this active layers;
One transparency conducting layer is formed on this second semiconductor conducting layer; And
One second electrode is formed on this transparency conducting layer;
Wherein, the formed a plurality of particulates of at least a dissimilar materials intersperse among between this first semiconductor conducting layer and this active layers, by this, form the multi-layer quantum well that this has a plurality of irregular and shapes that height rises and falls.
7. one kind is the portable computer of display light source with the light-emitting diode, at least include a basic computer, an input unit and a display, this display is selected from one of them by LCD and group that touch control display constitutes, this display comprises a panel module, driving circuit module and a backlight module at least, and the light source module that this backlight module uses includes the encapsulating structure of a plurality of light-emitting diode components or this light-emitting diode component; It is characterized in that this light-emitting diode component comprises:
One first electrode;
One substrate is formed on this first electrode;
One first semiconductor conducting layer is formed on this substrate;
One active layers, with have a plurality of irregular and the height undulations the multi-layer quantum well be formed on this first semiconductor conducting layer;
One second semiconductor conducting layer is formed on this active layers;
One transparency conducting layer is formed on this second semiconductor conducting layer; And
One second electrode is formed on this transparency conducting layer;
Wherein, the formed a plurality of particulates of at least a dissimilar materials intersperse among between this first semiconductor conducting layer and this active layers, by this, form the multi-layer quantum well that this has a plurality of irregular and shapes that height rises and falls.
8. one kind is the portable computer of display light source with the light-emitting diode, at least include a basic computer, an input unit and a display, this display is selected from one of them by LCD and group that touch control display constitutes, this display comprises a panel module, driving circuit module and a backlight module at least, and the light source module that this backlight module uses includes the encapsulating structure of a plurality of light-emitting diode components or this light-emitting diode component; It is characterized in that this light-emitting diode component comprises:
One substrate;
One first semiconductor conducting layer is formed on this substrate;
One first electrode is formed at the side on this first semiconductor layer;
One active layers is formed at the opposite side on this first semiconductor conducting layer, have a plurality of irregular and the height undulations the multi-layer quantum well;
One second semiconductor conducting layer is formed on this active layers;
One transparency conducting layer is formed on this second semiconductor conducting layer; And
One second electrode is formed on this transparency conducting layer;
Wherein, the formed a plurality of particulates of at least a dissimilar materials intersperse among between this first semiconductor conducting layer and this active layers, by this, form the multi-layer quantum well that this has a plurality of irregular and shapes that height rises and falls.
9. one kind is the projector equipment of light source with the light-emitting diode, at least comprise a housing, be placed in an one drive circuit device and a lens assembly in this housing, this lens assembly comprises a light source module, a lens module and focus module subsequently at least, and this light source module includes the encapsulating structure of a plurality of light-emitting diode components or this light-emitting diode component; It is characterized in that this light-emitting diode component comprises:
One first electrode;
One substrate is formed on this first electrode;
One first semiconductor conducting layer is formed on this substrate;
One active layers, with have a plurality of irregular and the height undulations the multi-layer quantum well be formed on this first semiconductor conducting layer;
One second semiconductor conducting layer is formed on this active layers;
One transparency conducting layer is formed on this second semiconductor conducting layer; And
One second electrode is formed on this transparency conducting layer;
Wherein, the formed a plurality of particulates of at least a dissimilar materials intersperse among between this first semiconductor conducting layer and this active layers, by this, form the multi-layer quantum well that this has a plurality of irregular and shapes that height rises and falls.
10. one kind is the projector equipment of light source with the light-emitting diode, at least comprise a housing, be placed in an one drive circuit device and a lens assembly in this housing, this lens assembly comprises a light source module, a lens module and focus module subsequently at least, and this light source module includes the encapsulating structure of a plurality of light-emitting diode components or this light-emitting diode component; It is characterized in that this light-emitting diode component comprises:
One substrate;
One first semiconductor conducting layer is formed on this substrate;
One first electrode is formed at the side on this first semiconductor layer;
One active layers is formed at the opposite side on this first semiconductor conducting layer, have a plurality of irregular and the height undulations the multi-layer quantum well;
One second semiconductor conducting layer is formed on this active layers;
One transparency conducting layer is formed on this second semiconductor conducting layer; And
One second electrode is formed on this transparency conducting layer;
Wherein, the formed a plurality of particulates of at least a dissimilar materials intersperse among between this first semiconductor conducting layer and this active layers, by this, form the multi-layer quantum well that this has a plurality of irregular and shapes that height rises and falls.
11. one kind is the back projection TV of light source with the light-emitting diode, at least comprise a casing, be arranged at the casing front end a screen, be placed in driving circuit module, a projector equipment and an optical reflection unit in this casing in order to the image that reflects this projector equipment and project to this screen, this projector equipment comprises at least one light source module, a lens module and focus module subsequently, and this light source module includes the encapsulating structure of a plurality of light-emitting diode components or this light-emitting diode component; It is characterized in that this light-emitting diode component comprises:
One first electrode;
One substrate is formed on this first electrode;
One first semiconductor conducting layer is formed on this substrate;
One active layers, with have a plurality of irregular and the height undulations the multi-layer quantum well be formed on this first semiconductor conducting layer;
One second semiconductor conducting layer is formed on this active layers;
One transparency conducting layer is formed on this second semiconductor conducting layer; And
One second electrode is formed on this transparency conducting layer;
Wherein, the formed a plurality of particulates of at least a dissimilar materials intersperse among between this first semiconductor conducting layer and this active layers, by this, form the multi-layer quantum well that this has a plurality of irregular and shapes that height rises and falls.
12. one kind is the back projection TV of light source with the light-emitting diode, at least comprise a casing, be arranged at the casing front end a screen, be placed in driving circuit module, a projector equipment and an optical reflection unit in this casing in order to the image that reflects this projector equipment and project to this screen, this projector equipment comprises at least one light source module, a lens module and focus module subsequently, and this light source module includes the encapsulating structure of a plurality of light-emitting diode components or this light-emitting diode component; It is characterized in that this light-emitting diode component comprises:
One substrate;
One first semiconductor conducting layer is formed on this substrate;
One first electrode is formed at the side on this first semiconductor layer;
One active layers is formed at the opposite side on this first semiconductor conducting layer, have a plurality of irregular and the height undulations the multi-layer quantum well;
One second semiconductor conducting layer is formed on this active layers;
One transparency conducting layer is formed on this second semiconductor conducting layer; And
One second electrode is formed on this transparency conducting layer;
Wherein, the formed a plurality of particulates of at least a dissimilar materials intersperse among between this first semiconductor conducting layer and this active layers, by this, form the multi-layer quantum well that this has a plurality of irregular and shapes that height rises and falls.
13. one kind is the light communication system of light source with the light-emitting diode, comprises a light emission module, a signal generator module, a fiber optic network transmission channel and at least one Optical Receivers; It is characterized in that this light emission module includes the encapsulating structure of a plurality of light-emitting diode components or this light-emitting diode component, this light-emitting diode component comprises:
One first electrode;
One substrate is formed on this first electrode;
One first semiconductor conducting layer is formed on this substrate;
One active layers, with have a plurality of irregular and the height undulations the multi-layer quantum well be formed on this first semiconductor conducting layer;
One second semiconductor conducting layer is formed on this active layers;
One transparency conducting layer is formed on this second semiconductor conducting layer; And
One second electrode is formed on this transparency conducting layer;
Wherein, the formed a plurality of particulates of at least a dissimilar materials intersperse among between this first semiconductor conducting layer and this active layers, by this, form the multi-layer quantum well that this has a plurality of irregular and shapes that height rises and falls.
14. one kind is the light communication system of light source with the light-emitting diode, comprises a light emission module, a signal generator module, a fiber optic network transmission channel and at least one Optical Receivers; It is characterized in that this light emission module includes the encapsulating structure of a plurality of light-emitting diode components or this light-emitting diode component, this light-emitting diode component comprises:
One substrate;
One first semiconductor conducting layer is formed on this substrate;
One first electrode is formed at the side on this first semiconductor layer;
One active layers is formed at the opposite side on this first semiconductor conducting layer, have a plurality of irregular and the height undulations the multi-layer quantum well;
One second semiconductor conducting layer is formed on this active layers;
One transparency conducting layer is formed on this second semiconductor conducting layer; And
One second electrode is formed on this transparency conducting layer;
Wherein, the formed a plurality of particulates of at least a dissimilar materials intersperse among between this first semiconductor conducting layer and this active layers, by this, form the multi-layer quantum well that this has a plurality of irregular and shapes that height rises and falls.
15. a led lamp comprises;
One housing, an end tool one joint; And
One circuit substrate is placed in this housing, is provided with the encapsulating structure of pair of electrodes and a plurality of light-emitting diode component or this light-emitting diode component;
Wherein, this joint is for the light fixture socket that operationally is bonded to the outside, and conducting is to the pair of electrodes of this circuit substrate; It is characterized in that light-emitting diode component comprises
One first electrode;
One substrate is formed on this first electrode;
One first semiconductor conducting layer is formed on this substrate;
One active layers, with have a plurality of irregular and the height undulations the multi-layer quantum well be formed on this first semiconductor conducting layer;
One second semiconductor conducting layer is formed on this active layers;
One transparency conducting layer is formed on this second semiconductor conducting layer; And
One second electrode is formed on this transparency conducting layer;
Wherein, the formed a plurality of particulates of at least a dissimilar materials intersperse among between this first semiconductor conducting layer and this active layers, by this, form the multi-layer quantum well that this has a plurality of irregular and shapes that height rises and falls.
16. a led lamp comprises:
One housing, an end tool one joint; And
One circuit substrate is placed in this housing, is provided with the encapsulating structure of pair of electrodes and a plurality of light-emitting diode component or this light-emitting diode component;
Wherein, this joint is for the light fixture socket that operationally is bonded to the outside, and conducting is to the pair of electrodes of this circuit substrate; It is characterized in that light-emitting diode component comprises
One substrate;
One first semiconductor conducting layer is formed on this substrate;
One first electrode is formed at the side on this first semiconductor layer;
One active layers is formed at the opposite side on this first semiconductor conducting layer, have a plurality of irregular and the height undulations the multi-layer quantum well;
One second semiconductor conducting layer is formed on this active layers;
One transparency conducting layer is formed on this second semiconductor conducting layer; And
One second electrode is formed on this transparency conducting layer;
Wherein, the formed a plurality of particulates of at least a dissimilar materials intersperse among between this first semiconductor conducting layer and this active layers, by this, form the multi-layer quantum well that this has a plurality of irregular and shapes that height rises and falls.
17. one kind is the Vehicular lamp of light source with the light-emitting diode, at least a light transmission lampshade that comprises a hollow shell block and be arranged at this shell block open window, one lamp socket is arranged in this housing, and the encapsulating structure of a circuit board and a plurality of light-emitting diode component or this light-emitting diode component is arranged at this lamp socket; It is characterized in that this light-emitting diode component comprises
One first electrode;
One substrate is formed on this first electrode;
One first semiconductor conducting layer is formed on this substrate;
One active layers, with have a plurality of irregular and the height undulations the multi-layer quantum well be formed on this first semiconductor conducting layer;
One second semiconductor conducting layer is formed on this active layers;
One transparency conducting layer is formed on this second semiconductor conducting layer; And
One second electrode is formed on this transparency conducting layer;
Wherein, the formed a plurality of particulates of at least a dissimilar materials intersperse among between this first semiconductor conducting layer and this active layers, by this, form the multi-layer quantum well that this has a plurality of irregular and shapes that height rises and falls.
18. one kind is the Vehicular lamp of light source with the light-emitting diode, at least a light transmission lampshade that comprises a hollow shell block and be arranged at this shell block open window, one lamp socket is arranged in this housing, and the encapsulating structure of a circuit board and a plurality of light-emitting diode component or this light-emitting diode component is arranged at this lamp socket; It is characterized in that this light-emitting diode component comprises
One substrate;
One first semiconductor conducting layer is formed on this substrate;
One first electrode is formed at the side on this first semiconductor layer;
One active layers is formed at the opposite side on this first semiconductor conducting layer, have a plurality of irregular and the height undulations the multi-layer quantum well;
One second semiconductor conducting layer is formed on this active layers;
One transparency conducting layer is formed on this second semiconductor conducting layer; And
One second electrode is formed on this transparency conducting layer;
Wherein, the formed a plurality of particulates of at least a dissimilar materials intersperse among between this first semiconductor conducting layer and this active layers, by this, form the multi-layer quantum well that this has a plurality of irregular and shapes that height rises and falls.
19. one kind is the traffic sign light fixture of light source with the light-emitting diode, comprises a hollow housing, a side is provided with an open window; One light transmission lampshade is disposed at this open window; One light source module is arranged in this hollow housing, includes the light-emitting diode component of a plurality of different wave lengths or the encapsulating structure of this light-emitting diode component; And a control loop, be equipped in this housing and be connected to this light source module, so as to control these light-emitting diode components partly or entirely be presented in the light transmission lampshade with colour mixture or monochrome; It is characterized in that this light source module has at least one light-emitting diode component and comprises:
One first electrode;
One substrate is formed on this first electrode;
One first semiconductor conducting layer is formed on this substrate;
One active layers, with have a plurality of irregular and the height undulations the multi-layer quantum well be formed on this first semiconductor conducting layer;
One second semiconductor conducting layer is formed on this active layers;
One transparency conducting layer is formed on this second semiconductor conducting layer; And
One second electrode is formed on this transparency conducting layer;
Wherein, the formed a plurality of particulates of at least a dissimilar materials intersperse among between this first semiconductor conducting layer and this active layers, by this, form the multi-layer quantum well that this has a plurality of irregular and shapes that height rises and falls.
20. one kind is the traffic sign light fixture of light source with the light-emitting diode, comprises a hollow housing, a side is provided with an open window; One light transmission lampshade is disposed at this open window; One light source module is arranged in this hollow housing, includes the light-emitting diode component of a plurality of different wave lengths or the encapsulating structure of this light-emitting diode component; And a control loop, be equipped in this housing and be connected to this light source module, so as to control these light-emitting diode components partly or entirely be presented in the light transmission lampshade with colour mixture or monochrome; It is characterized in that this light source module has at least one light-emitting diode component and comprises:
One substrate;
One first semiconductor conducting layer is formed on this substrate;
One first electrode is formed at the side on this first semiconductor layer;
One active layers is formed at the opposite side on this first semiconductor conducting layer, have a plurality of irregular and the height undulations the multi-layer quantum well;
One second semiconductor conducting layer is formed on this active layers;
One transparency conducting layer is formed on this second semiconductor conducting layer; And
One second electrode is formed on this transparency conducting layer;
Wherein, the formed a plurality of particulates of at least a dissimilar materials intersperse among between this first semiconductor conducting layer and this active layers, by this, form the multi-layer quantum well that this has a plurality of irregular and shapes that height rises and falls.
21. one kind is the traffic lines road indicator light of light source with the light-emitting diode, be installing one solar panels, a charging circuit, an electric storage means, an automatic illuminating circuit and a light source module in a transparency protected housing, wherein these solar panels are to be installed in up in this transparency protected housing, by converting thereof into electric energy by absorbing solar energy, and electric storage means is charged through charging circuit, this automatic illuminating circuit is to be connected to solar charging circuit and the light source module that is installed in the housing, and then makes this light source module luminous; It is characterized in that this light source module includes the encapsulating structure that this light source module includes a plurality of light-emitting diode components or this light-emitting diode component, this light-emitting diode component comprises
One first electrode;
One substrate is formed on this first electrode;
One first semiconductor conducting layer is formed on this substrate;
One active layers, with have a plurality of irregular and the height undulations the multi-layer quantum well be formed on this first semiconductor conducting layer;
One second semiconductor conducting layer is formed on this active layers;
One transparency conducting layer is formed on this second semiconductor conducting layer; And
One second electrode is formed on this transparency conducting layer;
Wherein, the formed a plurality of particulates of at least a dissimilar materials intersperse among between this first semiconductor conducting layer and this active layers, by this, form the multi-layer quantum well that this has a plurality of irregular and shapes that height rises and falls.
22. one kind is the traffic lines road indicator light of light source with the light-emitting diode, be installing one solar panels, a charging circuit, an electric storage means, an automatic illuminating circuit and a light source module in a transparency protected housing, wherein these solar panels are to be installed in up in this transparency protected housing, by converting thereof into electric energy by absorbing solar energy, and electric storage means is charged through charging circuit, this automatic illuminating circuit is to be connected to solar charging circuit and the light source module that is installed in the housing, and then makes this light source module luminous; It is characterized in that this light source module includes the encapsulating structure that this light source module includes a plurality of light-emitting diode components or this light-emitting diode component, this light-emitting diode component comprises
One substrate;
One first semiconductor conducting layer is formed on this substrate;
One first electrode is formed at the side on this first semiconductor layer;
One active layers is formed at the opposite side on this first semiconductor conducting layer, have a plurality of irregular and the height undulations the multi-layer quantum well;
One second semiconductor conducting layer is formed on this active layers;
One transparency conducting layer is formed on this second semiconductor conducting layer; And
One second electrode is formed on this transparency conducting layer;
Wherein, the formed a plurality of particulates of at least a dissimilar materials intersperse among between this first semiconductor conducting layer and this active layers, by this, form the multi-layer quantum well that this has a plurality of irregular and shapes that height rises and falls.
23. one kind is the traffic marking device of light source with the light-emitting diode, comprises at least one supporter and at least one sign body that is arranged on this supporter, wherein this sign body comprises:
One lamp box is to make with preliminary dimension to form, and has a transparent surface;
One light penetrating panel is arranged at the transparent surface of this lamp box, and its surface is provided with the sign of predetermined literal or pattern; One light source module is located in this lamp box, and towards this light penetrating panel, projection from inside to outside makes this sign bright with preset distance; And
One supply unit is in order to supply with the required electric power of these light source modules;
It is characterized in that this light source module includes the encapsulating structure of a plurality of light-emitting diode components or this light-emitting diode component, this light-emitting diode component comprises:
One first electrode;
One substrate is formed on this first electrode;
One first semiconductor conducting layer is formed on this substrate;
One active layers, with have a plurality of irregular and the height undulations the multi-layer quantum well be formed on this first semiconductor conducting layer;
One second semiconductor conducting layer is formed on this active layers;
One transparency conducting layer is formed on this second semiconductor conducting layer; And
One second electrode is formed on this transparency conducting layer;
Wherein, the formed a plurality of particulates of at least a dissimilar materials intersperse among between this first semiconductor conducting layer and this active layers, by this, form the multi-layer quantum well that this has a plurality of irregular and shapes that height rises and falls.
24. one kind is the traffic marking device of light source with the light-emitting diode, comprises at least one supporter and at least one sign body that is arranged on this supporter, wherein this sign body comprises:
One lamp box is to make with preliminary dimension to form, and has a transparent surface;
One light penetrating panel is arranged at the transparent surface of this lamp box, and its surface is provided with the sign of predetermined literal or pattern; One light source module is located in this lamp box, and towards this light penetrating panel, projection from inside to outside makes this sign bright with preset distance; And
One supply unit is in order to supply with the required electric power of these light source modules;
It is characterized in that this light source module includes the encapsulating structure of a plurality of light-emitting diode components or this light-emitting diode component, this light-emitting diode component comprises:
One substrate;
One first semiconductor conducting layer is formed on this substrate;
One first electrode is formed at the side on this first semiconductor layer;
One active layers is formed at the opposite side on this first semiconductor conducting layer, have a plurality of irregular and the height undulations the multi-layer quantum well;
One second semiconductor conducting layer is formed on this active layers;
One transparency conducting layer is formed on this second semiconductor conducting layer; And
One second electrode is formed on this transparency conducting layer;
Wherein, the formed a plurality of particulates of at least a dissimilar materials intersperse among between this first semiconductor conducting layer and this active layers, by this, form the multi-layer quantum well that this has a plurality of irregular and shapes that height rises and falls.
25. one kind is the digital electronic device of light source with the light-emitting diode, be to be selected from by photocopier, scanning machine, facsimile machine, office's multitask affairs machine, LCD TV, e-advertising billboard, electronics Game device, PDA(Personal Digital Assistant), and one of them of group that mobile communication device is formed, this digital electronic device has a light source module so that the light source of display to be provided, and this light source module includes the encapsulating structure of a plurality of light-emitting diode components or this light-emitting diode component; It is characterized in that this light-emitting diode component comprises:
One first electrode;
One substrate is formed on this first electrode;
One first semiconductor conducting layer is formed on this substrate;
One active layers, with have a plurality of irregular and the height undulations the multi-layer quantum well be formed on this first semiconductor conducting layer;
One second semiconductor conducting layer is formed on this active layers;
One transparency conducting layer is formed on this second semiconductor conducting layer; And
One second electrode is formed on this transparency conducting layer;
Wherein, the formed a plurality of particulates of at least a dissimilar materials intersperse among between this first semiconductor conducting layer and this active layers, by this, form the multi-layer quantum well that this has a plurality of irregular and shapes that height rises and falls.
26. one kind is the digital electronic device of light source with the light-emitting diode, be to be selected from by photocopier, scanning machine, facsimile machine, office's multitask affairs machine, LCD TV, e-advertising billboard, electronics Game device, PDA(Personal Digital Assistant), and one of them of group that mobile communication device is formed, this digital electronic device has a light source module so that the light source of display to be provided, and this light source module includes the encapsulating structure of a plurality of light-emitting diode components or this light-emitting diode component; It is characterized in that this light-emitting diode component comprises:
One substrate;
One first semiconductor conducting layer is formed on this substrate;
One first electrode is formed at the side on this first semiconductor layer;
One active layers is formed at the opposite side on this first semiconductor conducting layer, have a plurality of irregular and the height undulations the multi-layer quantum well;
One second semiconductor conducting layer is formed on this active layers;
One transparency conducting layer is formed on this second semiconductor conducting layer; And
One second electrode is formed on this transparency conducting layer;
Wherein, the formed a plurality of particulates of at least a dissimilar materials intersperse among between this first semiconductor conducting layer and this active layers, by this, form the multi-layer quantum well that this has a plurality of irregular and shapes that height rises and falls.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007101528556A CN101393949B (en) | 2007-09-18 | 2007-09-18 | LED encapsulation construction and use thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007101528556A CN101393949B (en) | 2007-09-18 | 2007-09-18 | LED encapsulation construction and use thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101393949A CN101393949A (en) | 2009-03-25 |
| CN101393949B true CN101393949B (en) | 2010-06-09 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2007101528556A Expired - Fee Related CN101393949B (en) | 2007-09-18 | 2007-09-18 | LED encapsulation construction and use thereof |
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| CN (1) | CN101393949B (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201203602A (en) * | 2010-07-09 | 2012-01-16 | Epistar Corp | A light emitting device with a single quantum well rod |
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2007
- 2007-09-18 CN CN2007101528556A patent/CN101393949B/en not_active Expired - Fee Related
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| CN101393949A (en) | 2009-03-25 |
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Effective date of registration: 20161028 Address after: Hsinchu City, Taiwan, China Patentee after: Jingyuan Optoelectronics Co., Ltd. Address before: Taichung City, Taiwan, China Patentee before: Guangjia Photoelectric Co., Ltd. |
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Granted publication date: 20100609 Termination date: 20190918 |