CN101355117B - Led - Google Patents

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Publication number
CN101355117B
CN101355117B CN2007100752982A CN200710075298A CN101355117B CN 101355117 B CN101355117 B CN 101355117B CN 2007100752982 A CN2007100752982 A CN 2007100752982A CN 200710075298 A CN200710075298 A CN 200710075298A CN 101355117 B CN101355117 B CN 101355117B
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CN
China
Prior art keywords
light
electrode
reflecting surface
emitting diode
emitting component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2007100752982A
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Chinese (zh)
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CN101355117A (en
Inventor
刘永山
郑小海
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Innocom Technology Shenzhen Co Ltd
Innolux Shenzhen Co Ltd
Innolux Corp
Original Assignee
Innolux Shenzhen Co Ltd
Innolux Display Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Innolux Shenzhen Co Ltd, Innolux Display Corp filed Critical Innolux Shenzhen Co Ltd
Priority to CN2007100752982A priority Critical patent/CN101355117B/en
Publication of CN101355117A publication Critical patent/CN101355117A/en
Application granted granted Critical
Publication of CN101355117B publication Critical patent/CN101355117B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic

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  • Led Devices (AREA)

Abstract

The invention relates to a light-emitting diode (LED). The LED comprises a first electrode, a second electrode and a luminous element arranged on the first electrode, wherein the first electrode comprises a first reflecting surface and a second reflecting surface connected with the first reflecting surface; the luminous element has a plurality of luminous areas; the first electrode and the secondelectrode are used to provide current for the luminous element; the first reflecting surface and the second reflecting surface are used to reflect the light emitted by the luminous element; and the luminous areas emit light in different direction to the space.

Description

Light-emitting diode
Technical field
The present invention relates to a kind of light-emitting diode.
Background technology
Characteristics such as light-emitting diode is fast because of its response, life-span length, color saturation height are widely used in the various products such as backlight module, mobile phone, stop-light, automotive headlight of liquid crystal indicator.
See also Fig. 1, Fig. 2, Fig. 1 is a kind of schematic perspective view of prior art light-emitting diode, and Fig. 2 is the generalized section of light-emitting diode 10 shown in Figure 1.
This light-emitting diode 10 comprises a light-emitting component 13, one first electrode 11, one second electrode 12 and a transparent outer cover 14.This light-emitting component 13 is arranged on this first electrode 11.This shell is accommodated 14 these first, second electrode 11,12 and this light-emitting components 13.This first, second electrode 11,12 is used for providing electric current for this light-emitting component 13.
These first electrode, 11 1 ends have one bowl of type structure 15.This bowl type structure 15 comprises an inner bottom surface 17 and a medial surface 16.This medial surface 16 scribbles reflective material, can reflection ray.This light-emitting component 13 is arranged on this inner bottom surface 17.This medial surface 16 forms a circular cone inner face around this light-emitting component 13.
Seeing also Fig. 3, is the section enlarged diagram of light-emitting diode 10 local I II shown in Figure 2.This light-emitting component 13 comprise a P type layer 131, a N type layer 132 and be arranged on this P type layer and this N type layer between a luminescent layer 133.This P type layer 131, this luminescent layer 133 and this N type layer 132 constitute a PN junction.This N type layer 132 is to be bonded on this inner bottom surface 17 by electric conducting material.This P type layer 131 is to be wired to this second electrode 12.This second electrode 12 is used for providing one first voltage for this P type layer, and this first electrode 11 is used for providing one second voltage for this N type layer, and this first voltage is greater than this second voltage.
During these light-emitting diode 10 operate as normal, first voltage that the voltage of this P type layer 131 is provided for this second electrode 12, second voltage that the voltage of this N type layer 132 is provided for this first electrode 11.Because this first voltage is greater than this second voltage, so the PN junction of this light-emitting component 13 has a forward current, the electronics generation transition of this luminescent layer 133, electric energy changes luminous energy into, and outwards launches light.The light that this medial surface 16 can be launched this luminescent layer 133 reflexes to this light-emitting component 13 tops, light path as shown in Figure 2, it has the function of collected light.
But the luminescent layer 133 of this light-emitting component 13 is a stratiform structure, and its light emitting region is little, and luminous quantity is few, therefore causes the luminosity of this light-emitting diode 10 low.
Summary of the invention
For solving the low problem of lumination of light emitting diode brightness in the prior art, be necessary the light-emitting diode that provides a kind of luminosity high.
A kind of light-emitting diode, it comprises that one first electrode, one second electrode and are arranged on the light-emitting component on this first electrode.This first electrode comprises one first reflecting surface and second reflecting surface that is connected with this first reflecting surface.This light-emitting component is a stereochemical structure, and its each mask has at least one light-emitting zone.This first electrode and this second electrode are used for providing electric current for this light-emitting component.This first, second reflecting surface is used for reflecting the light that this light-emitting component is launched.A plurality of light-emitting zones of this stereochemical structure are luminous to a plurality of directions in space.
Compared to prior art, light-emitting diode of the present invention comprises that one second reflecting surface and can be to the luminous light-emitting component of a plurality of directions, so this light-emitting diode can assemble more rays, has higher brightness.
Description of drawings
Fig. 1 is a kind of schematic perspective view of prior art light-emitting diode.
Fig. 2 is the generalized section of light-emitting diode shown in Figure 1.
Fig. 3 is the section enlarged diagram of light-emitting diode local I II shown in Figure 1.
Fig. 4 is the schematic perspective view of light-emitting diode first execution mode of the present invention.
Fig. 5 is the generalized section of light-emitting diode shown in Figure 4.
Fig. 6 is the three-dimensional enlarged diagram of light-emitting component shown in Figure 4.
Fig. 7 is the three-dimensional enlarged diagram of second reflecting surface shown in Figure 4.
Fig. 8 is the generalized section of light-emitting diode second execution mode of the present invention.
Embodiment
See also Fig. 4, Fig. 5, Fig. 4 is the schematic perspective view of light-emitting diode first execution mode of the present invention, and Fig. 5 is the generalized section of light-emitting diode 20 shown in Figure 3.This light-emitting diode 20 comprises that one first electrode 21, one second electrode 22, are arranged on a light-emitting component 23 and a transparent outer cover 24 on this first electrode.First, second electrode 21,22 of this light-emitting component 23 and this is electrically connected.This transparent outer cover 24 is accommodated this first, second electrode 21,22 and this light-emitting component 23.Wherein, this transparent outer cover 24 is a sealing shell, and its inside is for vacuum or charged into inert gas, and this inert gas is any in helium, neon, argon gas, the xenon, or the mixing of above-mentioned several gases.This first, second electrode the 21, the 22nd is electrically connected with this light-emitting component 23 by the conduction gold thread.
These first electrode, 21 1 ends are one bowl of type structure 25.This bowl type structure 25 comprises one first reflecting surface 26 and second reflecting surface 27 that is connected with this first reflecting surface.This first reflecting surface 25 forms a circular cone inner face around this light-emitting component 23.This second reflecting surface 27 is connected with this first reflecting surface 26 and is positioned at this light-emitting component 23 belows.
This first electrode 21 and this second electrode 22 are used for providing electric current for this light-emitting component 23.This first reflecting surface 26 is used for reflecting the light that this light-emitting component 23 is launched.This second reflecting surface 27 is used for reflecting the light that light that this light-emitting component 23 launched and this first reflecting surface 26 are reflected.
Seeing also Fig. 6, is the three-dimensional enlarged diagram of this light-emitting component 23.This light-emitting component 23 comprises four P type layers 231, four N type layers 232 and a plurality of luminescent layers 233.These four P type layers 231, these four N type layers 232 and this a plurality of luminescent layers 233 constitute a cube.These four P type layers 231 and these four N type layers 232 are arranged on these cubical eight corners.The body diagonal of each the P type layer on this cube and face diagonal place are a N type layer.This luminescent layer 233 is arranged between this P type layer and this N type layer.Each this P type layer 231, this luminescent layer 233 and this N type layer 232 constitute a PN junction.
Four P type layers 231 of this first electrode 21 and this are electrically connected, and four N type layers 232 of this second electrode 22 and this are electrically connected.This first electrode 21 is used for providing one first voltage for these four P type layers 231, and this second electrode 22 is used for providing one second voltage for these four N type layers 232, and this first voltage is greater than this second voltage.
Seeing also Fig. 7, is the three-dimensional enlarged diagram of this second reflecting surface 27.This second reflecting surface 27 comprises a projection 271.This second reflecting surface 27 is semi-convex spheres.This projection 271 is arranged on the center of this semi-convex sphere.This light-emitting component 23 is bonded on this projection 271.
During these light-emitting diode 20 operate as normal, each PN junction of this light-emitting component 23 all has forward current, and these a plurality of luminescent layers 233 are all outwards launched light.Because this light-emitting component 23 is a cube structure, the luminescent layer 233 of this cubical each face forms a light-emitting zone of this light-emitting component 23.This light-emitting component 23 have a plurality of can be to the luminous light-emitting zone of space different directions.
The cube that these four P type layers 231, these four N type layers 232 and this a plurality of luminescent layers 233 constitute has an end face (not indicating), a bottom surface (not indicating) and four sides (not indicating).The light that the luminescent layer 233 of this end face is launched directly injects to this transparent outer cover 24.A part of light that the luminescent layer 233 of these four sides is launched directly penetrates to this transparent outer cover 24, and the light of remainder penetrates and reflexes to this transparent outer cover to this first reflecting surface 26 and by this first reflecting surface 27.The light that the luminescent layer 233 of this bottom surface is launched injects to this second reflecting surface 27, wherein a part of light is reflexed to this transparent outer cover by this second reflecting surface 27, part light is reflexed to this first reflecting surface 26 by this second reflecting surface 27, is reflexed to this transparent outer cover by this first reflecting surface 26 then.
This light-emitting diode 20 comprises that one second reflecting surface 27 and can launch and assemble more light to the luminous light-emitting component 23 of a plurality of directions in space, has higher brightness.
Seeing also Fig. 8, is the generalized section of light-emitting diode second execution mode of the present invention.The structure of the light-emitting diode 20 in the structure of this light-emitting diode 30 and first execution mode is basic identical, and wherein, second reflecting surface 37 of this light-emitting diode 30 is half concave spherical surface.

Claims (10)

1. light-emitting diode, it comprises one first electrode, one second electrode and one is arranged on the light-emitting component on this first electrode, this first electrode comprises one first reflecting surface, this first electrode and this second electrode are used for providing electric current for this light-emitting component, this first reflecting surface is used for reflecting the light that this light-emitting component is launched, it is characterized in that: this light-emitting component is a stereochemical structure, its each mask has at least one light-emitting zone, a plurality of light-emitting zones of this stereochemical structure are luminous to a plurality of directions in space, this first electrode further comprises second reflecting surface that is connected with this first reflecting surface, and this second reflecting surface is used for reflecting the light that this light-emitting component is launched.
2. light-emitting diode as claimed in claim 1, it is characterized in that: this light-emitting component comprises four P type layers, four N type layers and a plurality of luminescent layer, these four P type layers, these four N type layers and this a plurality of luminescent layers constitute a cube, these four P type layers and these four N type layers are arranged on this cubical eight corners, the body diagonal of each the P type layer on this cube and face diagonal place are a N type layer, this luminescent layer is arranged between this P type layer and this N type layer, and each this P type layer, this luminescent layer and this N type layer constitute a PN junction.
3. light-emitting diode as claimed in claim 2, it is characterized in that: this first electrode is connected to this four P type layers, this second electrode is connected to this four N type layers, this first electrode provides one first voltage for these four P type layers, this second electrode provides one second voltage for these four N type layers, and this first voltage is greater than this second voltage.
4. light-emitting diode as claimed in claim 2, it is characterized in that: this first electrode is connected to this four N type layers, this second electrode is connected to this four P type layers, this first electrode provides one first voltage for these four N type layers, this second electrode provides one second voltage for these four P type layers, and this first voltage is less than this second voltage.
5. light-emitting diode as claimed in claim 1, it is characterized in that: this first reflecting surface forms a circular cone inner face around this light-emitting component, be used for reflecting the light of this light-emitting component emission and the light that this second reflecting surface is reflected, this second reflecting surface is connected with this first reflecting surface and is positioned at below this light-emitting component, this second reflecting surface center has a projection, and this light-emitting component is bonded on this projection.
6. light-emitting diode as claimed in claim 5 is characterized in that: this second reflecting surface is half concave spherical surface.
7. light-emitting diode as claimed in claim 5 is characterized in that: this second reflecting surface is a semi-convex sphere.
8. light-emitting diode as claimed in claim 1, it further comprises a transparent outer cover, this transparent outer cover is used for accommodating this first electrode, this second electrode and this light-emitting component.
9. light-emitting diode as claimed in claim 8 is characterized in that: this transparent outer cover is inner to be vacuum.
10. light-emitting diode as claimed in claim 8 is characterized in that: this transparent outer cover inside has charged into inert gas, and this inert gas is any in helium, neon, argon gas, the xenon, or the mixing of above-mentioned several gases.
CN2007100752982A 2007-07-25 2007-07-25 Led Expired - Fee Related CN101355117B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2007100752982A CN101355117B (en) 2007-07-25 2007-07-25 Led

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2007100752982A CN101355117B (en) 2007-07-25 2007-07-25 Led

Publications (2)

Publication Number Publication Date
CN101355117A CN101355117A (en) 2009-01-28
CN101355117B true CN101355117B (en) 2010-12-29

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Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115949922B (en) * 2022-12-26 2024-03-01 滨海治润电子有限公司 Novel diode

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2386535Y (en) * 1999-07-23 2000-07-05 亿光电子工业股份有限公司 Enclosing device for light-emitting diode
CN1700486A (en) * 2004-05-18 2005-11-23 胜华科技股份有限公司 White light organic electroluminescent device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2386535Y (en) * 1999-07-23 2000-07-05 亿光电子工业股份有限公司 Enclosing device for light-emitting diode
CN1700486A (en) * 2004-05-18 2005-11-23 胜华科技股份有限公司 White light organic electroluminescent device

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Granted publication date: 20101229

Termination date: 20200725