CN101355098A - Electro-optical apparatus, matrix substrate, and electronic unit - Google Patents
Electro-optical apparatus, matrix substrate, and electronic unit Download PDFInfo
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- CN101355098A CN101355098A CNA2008102138557A CN200810213855A CN101355098A CN 101355098 A CN101355098 A CN 101355098A CN A2008102138557 A CNA2008102138557 A CN A2008102138557A CN 200810213855 A CN200810213855 A CN 200810213855A CN 101355098 A CN101355098 A CN 101355098A
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Abstract
The present invention provides an electro-optical apparatus having a power-supply wiring structure that is capable of supplying a sufficient electrical power to a common electrode of electro-optical devices. An electro-optical apparatus according to the present invention comprises electro-optical devices having a laminated structure including first electrode layers formed on or above a viewing area 11 of a substrate 15 and a second electrode layer 14 formed on or above the first electrode layers, the laminated structure further including first power lines for supplying a voltage to the first electrode layers and second power wiring 16 electrically connected to the second electrode layer, wherein the first power lines and the second power lines are arranged on or above the viewing area and are arranged in the same layer as the first electrode layers or below the first electrode layers.
Description
The application is that application number is " 03156836.X ", and the applying date is on September 10th, 2003, and denomination of invention is divided an application for the application of " electro-optical device, matrix base plate and electronic equipment ".
Technical field
The present invention relates to be suitable for to have the power supply wiring configuration in the electro-optical device of electrooptic cell.
Background technology
Because organic EL (electro luminescence) element is the self-emission device of current drive-type, so it does not need to carry on the back irradiation, but also have the advantage that consumption electric power is low, the visual angle is wide, can access high-contrast etc., can be used for developing flat-panel displays.Organic EL is the electrooptic cell that luminescent layer constituted that clamping contains fluorescent substance between anode and negative electrode, by two interpolars being supplied with along bias current, again in conjunction with the energy self-luminous of the hole of injecting by anode when combining again by the negative electrode injected electrons.Therefore, when making organic EL luminous, must be by the external circuit supply power.In active matrix conversion drive organic EL display pannel in the past, be configured as the pixel electrode of anode in each pixel that in the pixel field, is provided with, on the other hand, as the negative electrode of common electrode, generally be to adopt in all structures that covers of pixel region.For example open in the 11-24606 communique (patent documentation 1) in that the spy is flat, announced that it is the display unit of feature with improving luminous efficiency that optimization with distributing reduces consumption electric power.
[patent documentation 1] special flat 11-24606 communique of opening
But, realize display pannel in order to use electrooptic cell, the cloth line resistance of common electrode just becomes problem.That is to say, because when the cloth line resistance of common electrode was big, near the voltage of the pixel the image central authorities descended and also increases, so just can not be near the sufficient electric current of the supply image central authorities, be difficult to carry out correct gray scale and represent, the display performance of display pannel is descended.Because display pannel is big more, the cloth line resistance of common electrode is just big more, and such problem is also just serious more.
Particularly penetrating from transparent negative electrode one side the top emission structure of light, can be still untapped as the suitable material that has with the optically transparent electrode of the equal resistance value of metal level, so the low resistanceization of common electrode is still a problem.
Summary of the invention
Therefore, the objective of the invention is, a kind of electro-optical device from the power supply wiring configuration of abundant electric power to the common electrode of electrooptic cell and the matrix base plate that can supply with that have is provided.And another purpose of the present invention provides the electro-optical device and the matrix base plate of the narrow edgeization that can realize display pannel.
Electro-optical device of the present invention is, possesses electrooptic cell, first electrode layer that this electrooptic cell is formed by the top, effective coverage that is included in substrate and above described first electrode layer laminated construction of the second electrode lay of setting constituted.Electro-optical device has to described first electrode layer and carries out first power line that voltage supplies with and the second source line that is electrically connected with described the second electrode lay, described first power line and described second source line, be set at the top of described effective coverage simultaneously, and be set at described first electrode layer with layer or in the lower floor of first electrode layer.
Like this, by in any one deck of the sandwich construction of the effective coverage of substrate superimposed layer, forming the second source line that is electrically connected with the second electrode lay,, also can supply with sufficient electric power even under the situation of the second electrode lay high resistanceization.And, because the electric connection point of the second electrode lay and second source line can be arranged on the inside of multilayer laminated structure, so can realize the narrow edgeization of display pannel.
Here, so-called " electrooptic cell ", be meant the general electronic component that the optical states that makes light under the effect of electricity changes, except self-emission devices such as organic electroluminescent device, also comprise liquid crystal cell etc. and change by the deflection state that makes light and carry out the electronic component that gray scale shows.Also have, so-called " effective coverage " be meant on the substrate electric light shown contributive zone, promptly should form the zone of electrooptic cell, with the same meaning of " viewing area " in the present embodiment.So-called " multilayer laminated structure " is meant the laminated construction of being made up of the plural layers of substrate superimposed layer, not only comprises the mechanical floor that constitutes electrooptic cell, also comprises interlayer dielectric, electrode layer, power line etc.And, in the present invention, between first electrode layer and first power line, can also there be electronic components such as transistor.
And according to the situation of manufacturing process, first power line and second source line can form in one deck, also can form in different layers respectively.
In electro-optical device of the present invention, it is desirable at least a portion of described first power line and second source line is configured in in one deck.Such structure can make the manufacturing process summary.
In electro-optical device of the present invention, preferably make described the second electrode lay have function as the negative electrode of described electrooptic cell.As negative electrode, the resistance value of electrooptic cell is descended by the second electrode lay.
In electro-optical device of the present invention, preferably make described second source line have function as the negative electrode auxiliary wiring.Thus, can supply with sufficient electric power to the negative electrode of electrooptic cell.
In electro-optical device of the present invention, preferably make described the second electrode lay have light transmission.Thus, can realize, numerical aperture is improved from the radiative top emission structure of the second electrode lay.
In electro-optical device of the present invention, preferably make described second source line branch bulk density with defined in constituting described multilayer laminated structure form wire.By of the dispersion of second source line, the resistance value of the second electrode lay is descended with the branch bulk density of defined.
In electro-optical device of the present invention, preferably described second source line and described the second electrode lay are formed in the different layers of described multilayer laminated structure, both are electrically connected in described multilayer laminated structure.The inside of multilayer laminated structure can be arranged on by electric connection point, the narrow edgeization of display pannel can be realized the second electrode lay and second source line.
In electro-optical device of the present invention, the position that preferably described second source line and described the second electrode lay are electrically connected is at a plurality of positions on the extending direction of described second source line.Being electrically connected by second source line and described the second electrode lay a little is set to many places, can realize the low resistanceization of the second electrode lay.
In electro-optical device of the present invention, be that media forms in different layers with the interlayer insulating film preferably described second source line and described the second electrode lay, make both pass through to be electrically connected at the conductive hole of described interlayer insulating film upper shed.Form in the different layers of multilayer laminated structure by second source line and the second electrode lay, both formation operations are separated.
In electro-optical device of the present invention, the orientation that preferably makes described second source line is parallel substantially with any one orientation in the orientation of the electrooptic cell of arranging on slightly rectangular both direction.Be arrangeding in parallel of the orientation by the second source line and the orientation of electrooptic cell can be supplied with sufficient electric power to the second electrode lay of arranging electrooptic cell on the rectangular both direction.
In electro-optical device of the present invention, the arrangement pitches of wishing described second source line slightly uniformly-spaced.By the uniformly-spaced arrangement of second source line, can supply with impartial electric power to arranging electrooptic cell on the rectangular both direction.
In electro-optical device of the present invention, described electrooptic cell is organic electroluminescent device preferably.By using organic electroluminescent device, can regulate luminous gray scale by the driving of electric current.
Electronic equipment of the present invention is provided with described electro-optical device.Get final product the people as electronic equipment so long as be provided with the equipment of display unit, and it is without particular limitation, for example, can be used for mobile phone, video camera, personal computer, main display, projector, picture unit, digital camera, portable television set, DSP (Digital Signal Processing Digital Signal Processing) device, PDA (Personal Digital Assistant personal digital assistant), the electronic documentation etc. installed.
Matrix base plate of the present invention is used to form electrooptic cell, and this electrooptic cell is made of the multilayer laminated structure that comprises first electrode layer and the second electrode lay.Matrix base plate comprises: be formed on substrate top the 1st electrode layer, carry out first power line that voltage supplies with, and the second source line that is electrically connected with the second electrode lay of formation above described first electrode layer to described first electrode layer; Described first power line and described second source line are arranged on the top of described effective coverage simultaneously, and with the same layer of described first electrode layer or on the layer below first electrode layer.
Like this, by should be above the substrate effective coverage any one deck in the multilayer laminated structure of the electrooptic cell of lamination form second source line in order to be electrically connected with the second electrode lay, even under the situation of the second electrode lay high resistanceization, also can supply with sufficient electric power.And, because the electric connection point of the second electrode lay and second source line can be arranged on the inside of multilayer laminated structure, so can realize the narrow edgeization of display pannel.Here, so-called " matrix base plate " is meant the circuit board that does not form electrooptic cell as yet.
In matrix base plate of the present invention, wish that described first power line and second source line have at least a part to be configured in in one deck.Such structure can make the manufacturing process summary.
In matrix base plate of the present invention, wish that described the second electrode lay has the function as the negative electrode of described electrooptic cell.As negative electrode, the cathodic electricity resistance of electrooptic cell is descended by the second electrode lay.
In matrix base plate of the present invention, wish that described second source line has the function as the negative electrode auxiliary wiring.Thus, can supply with sufficient electric power to the negative electrode of electrooptic cell.
In matrix base plate of the present invention, wish that described the second electrode lay has light transmission.Thus, can realize, numerical aperture is improved from the top emission structure of the second electrode lay generation light.
In matrix base plate of the present invention, wish that described second source line branch bulk density with defined in the random layer that constitutes described multilayer laminated structure forms wire.By of the dispersion of second source line, the resistance value of the second electrode lay is descended with the branch bulk density of regulation.
In matrix base plate of the present invention, wish that described second source line and described the second electrode lay form in the different layers of described multilayer laminated structure, both are electrically connected in described multilayer laminated structure.The inside of multilayer laminated structure can be arranged on by electric connection point, the narrow edgeization of display pannel can be realized the second electrode lay and second source line.
In matrix base plate of the present invention, wish that the position that described second source line and described the second electrode lay are electrically connected is at a plurality of positions on the extending direction of described second source line.Being electrically connected by second source line and described the second electrode lay a little is set to many places, can realize the low resistanceization of the second electrode lay.
In matrix base plate of the present invention, wish that described second source line and described the second electrode lay are is that media forms with the interlayer insulating film in different layers, both constitute electrical connection by the conductive hole in described interlayer insulating film upper shed.Form in the different layers of multilayer laminated structure by second source line and the second electrode lay, both formation operations are separated.
In matrix base plate of the present invention, the orientation of wishing described second source line is parallel substantially with any one orientation in the orientation of the electrooptic cell of arranging on slightly rectangular both direction.Be arrangeding in parallel of the orientation by the second source line and the orientation of electrooptic cell can be supplied with sufficient electric power to the second electrode lay of arranging electrooptic cell on the rectangular both direction.
In matrix base plate of the present invention, the arrangement pitches of wishing described second source line is for roughly uniformly-spaced.By the uniformly-spaced arrangement of second source line, can supply with impartial electric power to arranging electrooptic cell on the rectangular both direction.
Description of drawings
Fig. 1 is all structure charts of OLED display panel of the present invention.
Fig. 2 is the main circuit pie graph of pixel.
Fig. 3 is the key diagram of distributing in the first embodiment of the invention.
Fig. 4 is the profile along A-A ' line among Fig. 3.
Fig. 5 is the key diagram of distributing in the second embodiment of the invention.
Fig. 6 is the profile along B-B ' line among Fig. 5
Fig. 7 is the key diagram of distributing in the third embodiment of the invention.
Fig. 8 is the profile along C-C ' line among Fig. 7
Fig. 9 is the profile along D-D ' line among Fig. 7
Figure 10 is the figure of the suitable example of expression OLED display panel of the present invention.
Among the figure: 10-pixel, 11-pixel region, 12-scan line driver, 13-datawire driver, the 14-negative electrode, 15-substrate, 16-negative electrode auxiliary wiring, the 16-1-first negative electrode auxiliary wiring, the 16-2-second negative electrode auxiliary wiring, 17-pixel electrode, 18-ITO layer, 19-bank layer, the 20-planarization film, 21-interlayer dielectric, the multilayer laminated structure of 30-, 100-OLED display panel, Tr1-switching transistor, Tr2-driving transistors, C-keeps electric capacity, OLED-illuminating part, V
Sel-scan line, I
Dat-data wire, V
Dd-power supply supply line.
Embodiment
Embodiment 1
Followingly present embodiment is illustrated with reference to accompanying drawing.
Fig. 1 is all structure charts of OLED display panel 100 of the present invention.As shown in the drawing, substrate 15 is provided with, by a plurality of pixels 10 that multilayer laminated structure constituted that form on viewing area 11, to the scan line driver 12 of the scan line output scanning signal that is connected in one group of pixel 10 of arranging at line direction and the datawire driver 13 of supplying with data-signal and supply voltage to the data wire that is connected in one group of pixel 10 of arranging at column direction and power supply supply line.Pixel 10 is listed on the vertical both direction with the capable M of N and arranges, and forms picture element matrix.In each pixel 10, form the trichromatic light emission organic EL of RGB (RGB).The multilayer laminated structure that forms on viewing area 11, the negative electrode 14 that is used as common electrode covers film forming comprehensively.As employed material in the negative electrode 14, preferably can inject the material of electronics as much as possible, that is, and the little material of work function preferably.As such electric conducting material, it is desirable to metallic films such as calcium, lithium, aluminium.
Also have, represented OLED display panel 100 in figure, though be from substrate 15 sides emission light, it is the type of bottom emission structure, but the present invention is not limited to this, also the conducting film that can pass through to use light transmission adopts from cathode luminescence, i.e. the type of top emission structure as negative electrode 14.Adopting under the situation of top emission structure, as negative electrode 14, can adopt light transmission electric conducting materials such as ITO, in addition, can also adopt metallic films such as calcium, lithium, aluminium are carried out that transparent thin-film is handled and the conductivity semi-transparent metal layer that obtains.By using the conductivity semi-transparent metal layer, can realize the low resistanceization of negative electrode 14.
Fig. 2 is the main circuit pie graph of pixel.Pixel 10 is provided with switching transistor Tr1, driving transistors Tr2, maintenance capacitor C and illuminating part OLED and constitutes, and carries out drive controlling in 2 transistor modes.Switching transistor Tr1 is n channel-type FET (a Field Effect Transistor field-effect transistor), and its gate terminal is connected with scan line V
Sel, drain terminal is connected with data wire I
DatDriving transistors Tr2 is p channel-type FET, and its gate terminal is connected with the source terminal of switching transistor Tr1.And, this transistorized source terminal and power supply supply line V
DdBe connected, drain terminal is connected with illuminating part OLED.And then, between this transistorized gate/source, form the maintenance capacitor C.In described structure, to scan line V
SelSignal is selected in output, makes switching transistor Tr1 when opening state, by data wire I
DatThe data-signal of supplying with then writes the maintenance capacitor C as magnitude of voltage.Like this, the sustaining voltage that keeps writing in the capacitor C just can keep an image duration, and according to corresponding sustaining voltage, the electric guided mode of driving transistors Tr2 is intended ground and changed, and supplies with luminous gray scale corresponding along bias current to illuminating part OLED.
Fig. 3 is the key diagram of the distributing in the pixels illustrated zone.In the present invention, in order to realize the low resistanceization of negative electrode 14, with viewing area 11 on cover planar negative electrode 14 above the sandwich construction of lamination form thin-line-shaped negative electrode auxiliary wiring 16 on the different layer, both are by interlayer dielectric and electrically conducting.Have no particular limits though form the layer of negative electrode auxiliary wiring 16, consider the manufacturing process of display, by in same operation with scan line V
SelForm on one deck in same operation Deng metal line, can not increase operation, with the low cost manufacturing.With scan line V
SelThe negative electrode auxiliary wiring 16 that forms in same operation also can be called gate metal layer.And the position that forms negative electrode auxiliary wiring 16 should utilize the dead space of pixel 10 as far as possible.Because corresponding dead space is because of data wire I
Dat, scan line V
Sel, power supply supply line V
Dd, switching transistor Tr1 etc. separately placement position and difference, so should select the optimum position of various layouts to form negative electrode auxiliary wiring 16.But, if for data wire I
DatThe planes overlapping position forms negative electrode auxiliary wiring 16, then at data wire I
DatWill produce parasitic capacity with negative electrode auxiliary wiring 16, may produce the situations such as insufficient that write, so need consider and data wire I to the data that keep capacitor C
DatThe basis of relation on form negative electrode auxiliary wiring 16.
In with the example shown in the figure, by two scan line V
SelOne group of scan line and the negative electrode auxiliary wiring 16 formed are submitted mutual layout at line direction.Promptly form N/2 bar negative electrode auxiliary wiring 16 in every line.Scan line V
SelWith negative electrode auxiliary wiring 16 in same one deck separately, obtain by metal line is formed pattern in the lump, the live width of negative electrode auxiliary wiring 16, adjust with two scan line V
SelThe total live width equate substantially.On the other hand, on column direction, data wire I
DatWith power supply supply line V
DdEach column wiring is one on direction separately.With the ray mode of cloth shown in the figure is the unit that indication cycle repeats.To any one pixel 10 in the multilayer laminated structure all is with the distributing shown in the figure.That is, the distributing of present embodiment is the line symmetry for provisional capital arbitrarily, and pixel pitch all is uniformly-spaced to set for line direction and column direction.And, at data wire I
DatWith scan line V
SelThe position that intersects forms switching transistor Tr1.The gate terminal of driving transistors Tr2 is positioned on the extending direction of source terminal of switching transistor Tr1, and the drain terminal of driving transistors Tr2 is conducted by via h1 and pixel electrode 17.At power supply supply line V
DdThe last formation maintenance capacitor C parallel with the length direction of pixel electrode 17.
Fig. 4 is the profile along A-A ' line among Fig. 3.Shown in figure, on substrate 15, form by negative electrode auxiliary wiring 16, interlayer dielectric 21, source metal level 22, planarization film 20, ITO layer 18, and the bank layer 19 multilayer laminated structure 30 formed of lamination in turn.This multilayer laminated structure 30 is to form on viewing area 11.Film forming has negative electrode 14 on the upper strata of multilayer laminated structure 30.Interlayer dielectric 21 is for data wire I
DatAnd scan line V
SelFrom the dielectric film of negative electrode auxiliary wiring 16 electrical separation, on interlayer dielectric 21, be formed on and data wire I
DatAnd scan line V
SelForm the island source metal level 22 of pattern in the same operation.Source metal level 22 is conducted by via h5 and the negative electrode auxiliary wiring 16 at interlayer dielectric 21 inner openings.At interlayer dielectric 21 superimposed layers insulating properties planarization film 20 through planarization is arranged, layer forms the ITO layer 18 of island-shaped pattern thereon.ITO layer 18 is conducted by the via h3 at planarization film 20 inner openings with source metal level 22.Via h3 is having a plurality of openings on the extending direction of negative electrode auxiliary wiring 16, reduce resistance value by the contact point that a plurality of ITO layers 18 and source metal level 22 are set.
On the other hand, in the upper strata of planarization film 20 film forming by the bank layer of forming by photonasty organic material etc. 19.Bank layer 19 is differentiation parts of cutting apart each pixel 10, adjusts under shed in accurate alignment, makes oblong peristome h2 be positioned at (with reference to Fig. 3) on the pixel electrode 17.In peristome h2 on the pixel electrode 17 of exposing surface from lower floor's one side of substrate film forming hole transfer layer and luminescent layer in turn, and then film forming is as the negative electrode 14 of common electrode, cover viewing area 11 superimposed layers multilayer laminated structure 30 above.Form illuminating part OLED thus by negative electrode/luminescent layer/hole transfer layer/pixel electrode is formed.
Laminated construction as the mechanical floor that constitutes illuminating part OLED, be not limited to described formation, can also adopt negative electrode/luminescent layer/pixel electrode, negative electrode/electron supplying layer/luminescent layer/pixel electrode, negative electrode/electron supplying layer/luminescent layer/structures such as hole transfer layer/pixel electrode.That is to say that hole transfer layer and electron supplying layer are also nonessential, these layers can at random append.As the hole transfer layer, can use triphenylamine derivative (TPD), hydrazine (hydrazine) derivative, arylamine derivative etc.As electron transfer layer, can use aluminium chelate complexes (Alq
3), distyrene (DPVBi) derivative, bisoxazoline 40 thione derivatives,? anthracene derivant, phenyl azoles thiophene derivant, perylene kinds, thiazole etc.And luminescent material also is not limited to organic material, also can use inorganic material.
By the position of ITO layer 18, be distributed in the multiple spot place on the extending direction of negative electrode auxiliary wiring 16 on the surface of bank layer 19 at the peristome h4 that under shed is adjusted in accurate alignment.Negative electrode 14 in the upper strata of bank layer 19 film forming passes through via h4 and 18 conducting of ITO layer, and then, by source metal level 22 and 16 conductings of negative electrode auxiliary wiring.Like this,, the resistance value of negative electrode 14 is descended, supply with sufficient electric current to pixel 10 by the negative electrode auxiliary wiring 16 of formation in multilayer laminated structure 30 and the conducting of negative electrode 14.
According to present embodiment, it is possible that the resistance value of negative electrode 14 is lowered, and can lower owing to the generation to the inhomogeneous brightness depth inequality that causes of each pixel supplying electric current amount.And then, in the technology in the past, the picture limit of display pannel is provided with the conducting region of negative electrode 14 and negative electrode auxiliary wiring, but according to the present invention, owing to can guarantee conducting with multilayer laminated structure 30 inner cathodes 14, so can reach narrow edgeization, can realize the display pannel that the dead space is few.And, owing to thermal endurance, the resistance to chemical reagents of the bank layer that is made of organic material are relatively poor, so on bank layer, form negative electrode auxiliary wiring 16 difficulties, but, then form negative electrode auxiliary wiring 16 metal lines such as grade easily if on by formed substrates 15 such as FET.
Also have, be to form negative electrode auxiliary wiring 16 in the present embodiment, but be not limited to this in one ratio in two row, also can capable in n (n be the integer greater than 3) in one ratio, form negative electrode auxiliary wiring 16 with suitable branch bulk density.And the position that forms negative electrode auxiliary wiring 16 also is not limited to the surface of substrate 15, can form by any one deck in multilayer laminated structure 30.
[second embodiment]
Fig. 5 is the distributing figure of the OLED display panel 100 of expression second embodiment of the invention.In the present embodiment, negative electrode auxiliary wiring 16 is to form on column direction, and is different with first embodiment in this.In with the example shown in the figure, suppose by RGB three pixels to constitute a pixel cell that then the ratio in 3 of per 2 pixel cells uniformly-spaced forms negative electrode auxiliary wiring 16 on column direction.And, form two data wire I in the both sides of negative electrode auxiliary wiring 16
DatForming with two in the negative electrode auxiliary wiring 16 of adjacency and the row between the negative electrode auxiliary wiring 16 is one group power supply supply line V
Dd, with a negative electrode auxiliary wiring 16 and two data wire I
DatTotal width and two power supply supply line V
DdThe total width equate substantially and layout.Thus, with the distributing shown in the figure, can have being listed as arbitrarily all is the line symmetrical structure.On the other hand, in each row of line direction, form a scan line V
Sel, at scan line V
SelWith data wire I
DatThe crosspoint form switching transistor Tr1.The gate terminal of driving transistors Tr2 is positioned on the extending direction of source terminal of switching transistor Tr1, and the drain terminal of driving transistors Tr2 is conducted by via h1 and pixel electrode 17.At power supply supply line V
DdThe last formation maintenance capacitor C parallel with the length direction of pixel electrode 17.
Fig. 6 is the profile along B-B ' line among Fig. 5.Shown in figure, on substrate 15, form by scan line V
Sel, interlayer dielectric 21, negative electrode auxiliary wiring 16, planarization film 20, ITO layer 18, and the bank layer 19 multilayer laminated structure 30 formed of lamination in turn.This multilayer laminated structure 30 is to form on viewing area 11.Film forming has negative electrode 14 on the upper strata of multilayer laminated structure 30.Interlayer dielectric 21 is for scan line V
SelWith the dielectric film of negative electrode auxiliary wiring 16 electrical separation, on interlayer dielectric 21, form the negative electrode auxiliary wiring 16 of wire.On the planarization film 20 of film forming, the ITO layer 18 that forms pattern distributes in many places on the extending direction of negative electrode auxiliary wiring 16 on the negative electrode auxiliary wiring 16.Form via h3 in planarization film 20 upper sheds, ITO layer 18 has the structure of conducting by via h3 with negative electrode auxiliary wiring 16.On planarization film 20, form the bank layer of forming by the photonasty organic material 19, with the position of the pixel electrode 17 formation oblong peristome h2 (with reference to Fig. 5) that matches.In peristome h2, form illuminating part OLED equally with first embodiment.
On the other hand, by the position of ITO layer 18, be distributed in the multiple spot place on the extending direction of negative electrode auxiliary wiring 16 on the surface of bank layer 19 at the peristome h4 that under shed is adjusted in accurate alignment.Negative electrode 14 in the upper strata of bank layer 19 film forming passes through via h4 and 18 conducting of ITO layer, and then, with 16 conductings of negative electrode auxiliary wiring.Like this, by many filamentary cathode auxiliary wirings 16 that form along the column direction of pixel 10 electrically conducting, has structure from sufficient electric current to pixel 10 that to supply with negative electrode 14.
According to present embodiment, identical with first embodiment, it is possible that the resistance value of negative electrode 14 is lowered, and can lower owing to the generation to the inhomogeneous brightness depth inequality that causes of each pixel supplying electric current amount.And then, owing to can guarantee and of the conducting of multilayer laminated structure 30 inner cathode auxiliary wirings 16,, can realize the display pannel that the dead space is few so can reach narrow edgeization with negative electrode 14.Also have, be to form negative electrode auxiliary wiring 16 in the present embodiment, but be not limited to this in one ratio in two row, also can capable in n (n be the integer greater than 3) in one ratio, form negative electrode auxiliary wiring 16 with suitable branch bulk density.
[the 3rd embodiment]
Fig. 7 is the distributing figure of the OLED display panel 100 of expression second embodiment of the invention.In the present embodiment, negative electrode auxiliary wiring 16 is to form on line direction and column direction, and is different with first, second embodiment in this.Here, for the ease of distinguishing the negative electrode auxiliary wiring 16 that on line direction and column direction, forms, with following the negative electrode auxiliary wiring 16 note works first negative electrode auxiliary wiring 16-1 that direction forms, make the second negative electrode auxiliary wiring 16-2 along negative electrode auxiliary wiring 16 notes that column direction forms.And when mentioning negative electrode auxiliary wiring 16 separately, short of explanation in advance all is meant to comprise both.In with the example shown in the figure, suppose by RGB three pixels to constitute a pixel cell that then the ratio in 3 of per 2 pixel cells uniformly-spaced forms the second negative electrode auxiliary wiring 16-2 on column direction.And, form two data wire I in the both sides of the second negative electrode auxiliary wiring 16-2
DatTwo of formation are one group power supply supply line V in the row between two negative electrode auxiliary wiring 16-2 of adjacency
Dd, with one second negative electrode auxiliary wiring 16-2 and two data wire I
DatTotal width and two power supply supply line V
DdThe total width equate substantially and layout.Thus, with the distributing shown in the figure, can have being listed as arbitrarily all is the line symmetrical structure.
On the other hand, on line direction, by two scan line V
SelThe one group of scan line forming and the first negative electrode auxiliary wiring 16-1 interactive placement.Scan line V
SelWith the first negative electrode auxiliary wiring 16-1 in same one deck separately, obtain by forming pattern with metal line, adjust the live width of the first negative electrode auxiliary wiring 16-1, make itself and two scan line V
SelThe total live width equate substantially.By this structure,, can have row and row all are the line symmetries arbitrarily with the distributing shown in the figure.
At scan line V
SelWith data wire I
DatThe crosspoint form switching transistor Tr1.The gate terminal of driving transistors Tr2 is positioned on the extending direction of source terminal of switching transistor Tr1, and the drain terminal of driving transistors Tr2 is conducted by via h1 and pixel electrode 17.At power supply supply line V
DdThe last formation maintenance capacitor C parallel with the length direction of pixel electrode 17.
Fig. 8 is the profile along C-C ' line among Fig. 7.Shown in figure, on substrate 15, form by the first negative electrode auxiliary wiring 16-1, interlayer dielectric 21, planarization film 20, source metal level 22, ITO layer 18, and the bank layer 19 multilayer laminated structure 30 formed of lamination in turn.This multilayer laminated structure 30 is to form on viewing area 11.Film forming has negative electrode 14 on the upper strata of multilayer laminated structure 30.Interlayer dielectric 21 is for data wire I
DatAnd scan line V
SelDielectric film with the first negative electrode auxiliary wiring 16-1 electrical separation.At data wire I
DatAnd scan line V
SelSame one deck on, form and the second vertical orientated negative electrode auxiliary wiring 16-2 of the first negative electrode auxiliary wiring 16-1, both are electrically connected by the via h6 in interlayer dielectric 21 upper sheds.
And, on interlayer dielectric 21 and the same one deck second negative electrode auxiliary wiring 16-2, form the source metal level 22 of many places island along the extending direction of the first negative electrode auxiliary wiring 16-1.
Fig. 9 is the profile along D-D ' line among Fig. 7.Shown in figure, on substrate 15, form by the first negative electrode auxiliary wiring 16-1, scan line V
Sel, interlayer dielectric 21, the second negative electrode auxiliary wiring 16-2, planarization film 20, ITO layer 18, and the bank layer 19 multilayer laminated structure 30 formed of lamination in turn.The first negative electrode auxiliary wiring 16-1 and the second negative electrode auxiliary wiring 16-2 are mutually vertical and form between the imbed dielectric film 21, by at the via h6 of interlayer dielectric 21 upper sheds and mutual conduction.On the planarization film 20 of the top laminate of the second negative electrode auxiliary wiring 16-2, formation forms the island ITO layer 18 that many places distribute along the extending direction of the second negative electrode auxiliary wiring 16-2, planarization film 20 upper sheds have via h3, and the ITO layer 18 and the second negative electrode auxiliary wiring 16-2 are conducted.And, at the extending direction many places opening of the bank layer 19 upper edges second negative electrode auxiliary wiring 16-2 via h4 is arranged.Like this,, have the resistance of negative electrode 14 is descended significantly, pixel 10 is supplied with the structure of abundant electric power by negative electrode 14 conducting with the negative electrode auxiliary wiring 16 that on orthogonal 2 directions in the inside of multilayer laminated structure 30, forms.Therefore, can lower, realize excellent expression performance owing to generation to the inhomogeneous brightness depth inequality that causes of each pixel supplying electric current amount.And then, owing to can guarantee so can reach narrow edgeization, can realize the display pannel that the dead space is few in the conducting of inner cathode auxiliary wiring 16 with the negative electrode 14 of multilayer laminated structure 30.
[the 4th embodiment]
Figure 10 is the figure of example of the electronic equipment that is suitable for electro-optical device of the present invention of expressing possibility.With (a) among the figure is the example that is applicable to mobile phone, and mobile phone 230 is provided with antenna part 231, audio output unit 232, sound input part 233, operating portion 234 and OLED display panel 100 of the present invention.Can utilize the display part of OLED display panel 100 of the present invention like this as mobile phone 230.With (b) among the figure is the example that is applicable to video camera, and video camera 240 is provided with and is subjected to picture portion 241, operating portion 242, sound input part 243 and OLED display panel 100 of the present invention.Can utilize OLED display panel 100 of the present invention as detector and display part etc. like this.With (c) among the figure is the example that is applicable to notebook (portable personal computer), and computer 250 is provided with camera section 251, operating portion 252 and OLED display panel 100 of the present invention.Can utilize OLED display panel of the present invention 100 as display unit like this.
With (d) among the figure is the example that is applicable to helmet-mounted display, and helmet-mounted display 260 is provided with belt 261, optical system incorporating section 262 and OLED display panel 100 of the present invention.Can utilize OLED display panel 100 of the present invention to show the source like this as image.With (e) among the figure is the example that is applicable to back back projection type projector, and projector 270 has that framework 271, light source 272, synthesizing optical are 273, speculum 274,275, screen 276 and OLED display panel 100 of the present invention.With (f) among the figure is the example that is applicable to front projection type projector, and projector 280 is provided with framework 282, optical system 281 and OLED display panel 100 of the present invention, image can be shown on screen 283.Can utilize OLED display panel 100 of the present invention to show the source like this as image.
Claims (24)
1, a kind of electro-optical device possesses electrooptic cell, first electrode layer that this electrooptic cell is formed by the effective coverage top that is included in substrate and above described first electrode layer laminated construction of the second electrode lay of setting constituted, it is characterized in that:
Have to described first electrode layer and carry out first power line of voltage supply and the second source line that is electrically connected with described the second electrode lay,
Described first power line and described second source line are set at the top of described effective coverage simultaneously, and be set at described first electrode layer with layer or in the lower floor of first electrode layer.
2, electro-optical device according to claim 1 is characterized in that: at least a portion of described first power line and second source line is configured in in one deck.
3, electro-optical device according to claim 1 and 2 is characterized in that: described the second electrode lay has the function as the negative electrode of described electrooptic cell.
4, electro-optical device according to claim 3 is characterized in that: described second source line has the function as the negative electrode auxiliary wiring.
5, according to any described electro-optical device in the claim 1～4, it is characterized in that: described the second electrode lay has light transmission.
6, according to any described electro-optical device in the claim 1～5, it is characterized in that: described second source line branch bulk density with defined in the random layer that constitutes described multilayer laminated structure forms wire.
7, according to any described electro-optical device in the claim 1～6, it is characterized in that: described second source line and described the second electrode lay are respectively formed in the different layers of described multilayer laminated structure, and both are electrically connected in described multilayer laminated structure mutually.
8, electro-optical device according to claim 7 is characterized in that: described second source line is at a plurality of positions on the extending direction of described second source line with the position that described the second electrode lay is electrically connected mutually.
9, according to claim 7 or 8 described electro-optical devices, it is characterized in that: described second source line is to be that media is formed in the different layers with the interlayer insulating film with described the second electrode lay, and both constitute electrical connection by the conductive hole in described interlayer insulating film upper shed.
10, according to any described electro-optical device in the claim 1～9, it is characterized in that: described electrooptic cell is arranged and is arranged on the roughly rectangular both direction, and any one orientation in the orientation of the orientation of described second source line and the electrooptic cell of arranging on slightly rectangular both direction is parallel substantially.
11, according to claim 10 described electro-optical device, it is characterized in that: the arrangement pitches of described second source line slightly uniformly-spaced.
12, according to any described electro-optical device in the claim 1～11, it is characterized in that: described electrooptic cell is an electroluminescent cell.
13, a kind of electronic equipment that is provided with any described electro-optical device in the claim 1～12.
14, a kind of matrix base plate is used to form electrooptic cell, and this electrooptic cell is made of the multilayer laminated structure that comprises first electrode layer and the second electrode lay, it is characterized in that:
Comprise: be formed on substrate top the 1st electrode layer,
To described first electrode layer carry out first power line that voltage supplies with, and
The second source line that is electrically connected with the second electrode lay that above described first electrode layer, forms,
Described first power line and described second source line are arranged on the top of described effective coverage simultaneously, and with the same layer of described first electrode layer or on the layer below first electrode layer.
15, matrix base plate according to claim 14 is characterized in that: at least a portion of described first power line and described second source line is configured in in one deck.
16, according to claim 14 or 15 described matrix base plates, it is characterized in that: described the second electrode lay has the function as the negative electrode of described electrooptic cell.
17, matrix base plate according to claim 16 is characterized in that: described second source line has the function as the negative electrode auxiliary wiring.
18, according to any described matrix base plate in the claim 14～17, it is characterized in that: described the second electrode lay has light transmission.
19, according to any described matrix base plate in the claim 14～18, it is characterized in that: described second source line branch bulk density with regulation in the random layer that constitutes described multilayer laminated structure forms wire.
20, according to any described matrix base plate in the claim 14～19, it is characterized in that: described second source line and described the second electrode lay form in the different layers of described multilayer laminated structure, and both are electrically connected in described multilayer laminated structure mutually.
21, matrix base plate according to claim 20 is characterized in that: the position that described second source line and described the second electrode lay are electrically connected is at a plurality of positions on the extending direction of described second source line.
22, according to claim 20 or 21 described matrix base plates, it is characterized in that: described second source line is to be that media forms in different layers with the interlayer insulating film with described the second electrode lay, and both constitute electrical connection by the conductive hole in described interlayer insulating film upper shed.
23, according to any described matrix base plate in the claim 14～22, it is characterized in that: any one orientation in the orientation of the orientation of described second source line and the electrooptic cell of arranging on slightly rectangular both direction is parallel substantially.
24, matrix base plate according to claim 23 is characterized in that: the arrangement pitches of described second source line is for roughly uniformly-spaced.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002278970 | 2002-09-25 | ||
| JP2002278970 | 2002-09-25 | ||
| JP2003286292 | 2003-08-04 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB03156836XA Division CN100433353C (en) | 2002-09-25 | 2003-09-10 | Electro-optical device, matrix base plate and electronic equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101355098A true CN101355098A (en) | 2009-01-28 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2008102138557A Pending CN101355098A (en) | 2002-09-25 | 2003-09-10 | Electro-optical apparatus, matrix substrate, and electronic unit |
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| Country | Link |
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| JP (2) | JP2008262220A (en) |
| CN (1) | CN101355098A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102024891A (en) * | 2009-09-18 | 2011-04-20 | 丰田合成株式会社 | Light-emitting element |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101663858B1 (en) * | 2010-06-18 | 2016-10-07 | 가부시키가이샤 제이올레드 | Organic el display device |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07159810A (en) * | 1993-12-10 | 1995-06-23 | Toshiba Corp | Liquid crystal display device |
| JP3520396B2 (en) * | 1997-07-02 | 2004-04-19 | セイコーエプソン株式会社 | Active matrix substrate and display device |
| JP3259774B2 (en) * | 1999-06-09 | 2002-02-25 | 日本電気株式会社 | Image display method and apparatus |
| JP4434411B2 (en) * | 2000-02-16 | 2010-03-17 | 出光興産株式会社 | Active drive type organic EL light emitting device and manufacturing method thereof |
| JP4360015B2 (en) * | 2000-03-17 | 2009-11-11 | セイコーエプソン株式会社 | Method for manufacturing organic EL display, method for arranging semiconductor element, method for manufacturing semiconductor device |
| JP2002318556A (en) * | 2001-04-20 | 2002-10-31 | Toshiba Corp | Active matrix type planar display device and manufacturing method therefor |
| JP4310984B2 (en) * | 2002-02-06 | 2009-08-12 | 株式会社日立製作所 | Organic light emitting display |
| JP3922374B2 (en) * | 2002-09-25 | 2007-05-30 | セイコーエプソン株式会社 | Electro-optical device, matrix substrate, and electronic apparatus |
-
2003
- 2003-09-10 CN CNA2008102138557A patent/CN101355098A/en active Pending
-
2008
- 2008-07-08 JP JP2008177678A patent/JP2008262220A/en not_active Withdrawn
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102024891A (en) * | 2009-09-18 | 2011-04-20 | 丰田合成株式会社 | Light-emitting element |
| CN102024891B (en) * | 2009-09-18 | 2013-03-20 | 丰田合成株式会社 | Light-emitting element |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2009116349A (en) | 2009-05-28 |
| JP2008262220A (en) | 2008-10-30 |
| JP4924847B2 (en) | 2012-04-25 |
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