CN101350325A - Method for measuring distortion of epitaxial growth picture - Google Patents
Method for measuring distortion of epitaxial growth picture Download PDFInfo
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- CN101350325A CN101350325A CNA2007100939522A CN200710093952A CN101350325A CN 101350325 A CN101350325 A CN 101350325A CN A2007100939522 A CNA2007100939522 A CN A2007100939522A CN 200710093952 A CN200710093952 A CN 200710093952A CN 101350325 A CN101350325 A CN 101350325A
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Abstract
The invention discloses a method for measuring the picture distortion during the epitaxial growth, which comprises the following steps: firstly, carrying out the photo-etching and the etching to a substrate layer through adopting a photo-etching plate A, and generating two sets of measuring pictures, secondly, generating protective layers on the two sets of measuring pictures, thirdly carrying out the photo-etching and the etching to the protective layers through adopting a photo-etching plate B, and enabling the first set of the pictures to be protected, fourthly, carrying out the epitaxial growth, generating a second set of pictures which are after the epitaxial growth, fifthly, measuring the first set of and the second set of the pictures, after being compared, obtaining the picture distortion during the epitaxial growth. After using the measuring method of the invention, the variation of the picture distortion of the epitaxial growth technology can be accurately measured, and the characterization capability which is expressed by the technical parameter of the epitaxial growth technology can be improved in one aspect, and in the other aspect, since the subsequent photo-etching aligning technology has greatly help, thereby the photo-etching aligning accuracy of small size extensional products can be improved, and thereby the continuous reduction of the size of extensional products can be realized.
Description
Technical field
The present invention relates to the process that a kind of semiconductor device is made, relate in particular to the parameter measuring method of epitaxial growth technology in a kind of semiconductor manufacturing, be specifically related to a kind of method of measuring pattern distortion in the epitaxial growth.
Background technology
Extension (Epitaxy in semiconductor is made, abbreviation Epi) technology is meant the monocrystal material that growth one deck has identical lattice arrangement with substrate on single crystalline substrate, epitaxial loayer can be homogeneity epitaxial layer (Si/Si), also can be epitaxially deposited layer (SiGe/Si or SiC/Si etc.); Same realization epitaxial growth also has a lot of methods, comprises molecular beam epitaxy (MBE), high vacuum chemical vapour deposition (UHV/CVD), normal pressure and reduced pressure epitaxy (ATM ﹠amp; RP Epi) or the like.Under certain conditions, on the single crystalline substrate of the careful preparation of a process,, grow one deck conduction type along original crystal axis direction, resistivity, the process of all satisfactory new single-crystal layer such as thickness and lattice structure, integrality etc., be called extension, this layer single crystalline layer is called epitaxial loayer.Because many semiconductor device are directly to be produced on the epitaxial loayer, the quality of epitaxial layer quality will directly influence the performance of device.The quality of epitaxial loayer normally should satisfy following requirement: the crystal structure of integrality, resistivity accurately and uniformly, uniform epitaxy layer thickness, the surface should be bright and clean, non-oxidation, no cloud and mist, the surface zero defect (refers generally to pyramid, bright spot and star-like defective etc.) and body in defective (referring generally to dislocation, fault and sliding line etc.) to lack, also require not have pattern distortion phenomenon etc. for the buried layer of integrated circuit.
During outer layer growth in semiconductor is made, pattern distortion is more common a kind of phenomenon.And the follow-up lithography alignment precision of pattern distortion meeting influence, thereby the alignment precision of restriction photoetching has limited the exploitation and the manufacturing of small size epitaxial device.The pattern distortion amount that produces when how accurately to measure epitaxial growth for improving photoetching alignment precision, has very important meaning.
The method of pattern distortion is a decoration method in the existing measurement epitaxial growth commonly used.Decoration method is to use the different chemical liquids that contains Cu or Cr to corrode to different crystal orientations, relies on chemical liquid and measures at the difference formation interface of substrate layer and epitaxial loayer diffusion.Also need section to measure after the dyeing.The defective of this method is that (10～100nm) amount of distortion precision is not enough, can't accurately characterize, and the loaded down with trivial details trouble of measuring process to measuring microsize.Thereby need a kind of method of accurate measurement to improve precision.
Summary of the invention
The technical problem to be solved in the present invention provides a kind of method of measuring pattern distortion in the epitaxial growth, improves the accuracy of measuring pattern distortion in the epitaxial growth.
For solving the problems of the technologies described above; the invention provides a kind of method of measuring pattern distortion in the epitaxial growth; by a protective layer growth and a photoetching; etching; produce the protected measurement pattern of a cover; by comparing with another set of not protected measurement pattern, measure the pattern distortion that is caused by epitaxial growth then, this method mainly comprises the steps:
(1) adopt photolithography plate A that substrate layer is carried out photoetching, etching produces two cover measurement pattern;
(2) on above-mentioned two cover measurement pattern, produce protective layer;
(3) adopt photolithography plate B that protective layer is carried out photoetching, etching makes the first cover figure wherein protected;
(4) epitaxial growth, the figure after the generation second cover epitaxial growth;
(5) measure the first cover figure and the second cover figure, obtain pattern distortion in the epitaxial growth through contrast.
In the step (5), when direct use microscope carries out optical measurement, adopt the vernier method measurement pattern, perhaps adopt high resolution CCD/CMOS to take pictures, accurately measure by graphics process then in conjunction with high-power microscope.
When adopting the vernier method measurement pattern in the step (5), the measurement pattern of use is designed to the vernier of two groups of different cycles, and the precision that the periodic inequality of two groups of verniers is measured by needs decides.
Described photolithography plate B makes among the described photolithography plate A the first cover figures in the two cover measurement pattern protected, and the second cover figure then can not be protected, must guarantee on the second cover figure to be removed by the protective layer of step (2) generation in etching.
Described protective layer is oxide or a nitride commonly used during semiconductor is made, or other have the material of same characteristic features.
Adopt chemical vapour deposition technique or physical vaporous deposition to produce protective layer in the step (2), the growth of protective layer can not exerted an influence to substrate layer.
After step (4) is finished, decide according to the contrast of final measurement pattern and the protective layer on the first cover figure to be removed or keep.
Compare with prior art, the present invention has following beneficial effect: can improve the accuracy of measuring pattern distortion in the epitaxial growth greatly.The direct test pattern precision of optics can reach about 100nm, carries out graphics process later on by means of SEM or optical photographing, and precision can be brought up to about 10nm, is much higher than existing decoration method.It can be used as a kind of means of monitoring epitaxial growth technology stability.Whether after epitaxial growth technology is set up, it is stable to monitor epitaxially grown pattern distortion.It goes for common various molecule epitaxial growth technologies in the semiconductor manufacturing, comprises silicon, germanium, the epitaxial growth of germanium/silicon etc.
Description of drawings
Fig. 1 is the process chart that the present invention measures sample preparation in the method for pattern distortion in the epitaxial growth;
Fig. 2 is that the present invention measures the measurement pattern schematic diagram in the method for pattern distortion in the epitaxial growth.
Embodiment
The present invention is further detailed explanation below in conjunction with drawings and Examples.
The method of pattern distortion in the measurement epitaxial growth of the present invention; mainly utilize epitaxial loayer on some materials, to be difficult to the characteristic of growth; produce oxide respectively; the protection of nitride or other protective layer and carry out epitaxially grown two groups of measurement pattern; then by to the contrast of measurement pattern, draw the pattern distortion after the epitaxial growth.Its main main points comprise: measurement pattern design and sample preparation methods.The preparation of sample mainly comprises: the generation of measurement pattern on the sample strip, and protection is a block graphics wherein, and epitaxial growth obtains the figure of required measurement.Can measure the distortion of figure after the epitaxial growth then by two block graphicses.
As shown in Figure 1, the technological process of sample preparation of the present invention is as follows:
(1) adopt photolithography plate A that substrate layer is carried out photoetching, etching produces two cover measurement pattern; Described substrate layer can be layer-of-substrate silicon or germanium substrate layer etc., and what adopt among Fig. 1 is layer-of-substrate silicon (being the silicon substrate among Fig. 1);
(2) on above-mentioned two cover measurement pattern, produce protective layer; And the growth of protective layer can not exert an influence to substrate layer, therefore can not use hot growing method growth, must adopt chemical vapor deposition (CVD) or physical vaporous deposition methods such as (PVD).Chemical vapor deposition (CVD) comprises epitaxial growth method, NPCVD (aumospheric pressure cvd), LPCVD (low-pressure chemical vapor deposition), HCVD (thermal chemical vapor deposition), PECVD (the electricity slurry strengthens chemical vapour deposition (CVD)) etc.Physical vaporous deposition (PVD) comprises methods such as evaporation, sputter.
(3) adopt photolithography plate B that protective layer is carried out photoetching, etching makes the first cover figure wherein protected; Photolithography plate B makes among the photolithography plate A the first cover figures in the two cover measurement pattern protected, and the second cover figure then can not be protected, must guarantee on the second cover figure to be removed by the protective layer of step (2) generation in etching.
(4) epitaxial growth, at the second cover figure growing epitaxial layers, the figure after the generation second cover epitaxial growth; Grow owing to be difficult on the protective layer during epitaxial growth, therefore make on the first cover figure and leave protective layer, the second cover figure removes protective layer so that carry out epitaxial growth.From technology for simplicity, protective layer can be oxide or a nitride commonly used during semiconductor is made, and also can use other to have the material of same characteristic features.
Photoetching, etching technics in step (1), (3); the general technology that belongs to semiconductor applications; producing figure by photoetching, etching is a kind of very ordinary semiconductor technology; there is not specific demand for these technologies in the present invention, as long as it is just passable finally to produce figure on substrate layer, protective layer.
After step (4) epitaxial growth is finished, the protective layer on the protected first cover measurement pattern can be removed, also can keep.To determine whether that specifically needs keep according to the contrast of final measurement pattern.Can see whether first cover has epitaxial growth on the measurement pattern,, just remove protective layer if having and cause and accurately to measure; Can see whether the material that protective layer adopts is transparent,, just keep protective layer if transparent and certainty of measurement do not had influence; Can see that step is enough,, cause contrast not enough, can't accurately measure, just remove protective layer, judge that step is enough also will determine according to factors such as the epitaxial growth thickness and the substrate etching degree of depth if step is not enough.
After going out sample by above flow preparation, by measuring the above-mentioned first cover figure and the second cover figure just can obtain pattern distortion in the epitaxial growth.When carrying out optical measurement, direct use microscope can adopt the vernier method measurement pattern, perhaps adopt high resolution CCD (CCD imageing sensor)/CMOS (cmos image sensor) to take pictures in conjunction with high-power microscope, accurately measure by graphics process then.When adopting the vernier method measurement pattern, the measurement pattern of using is designed to the vernier of two groups of different cycles, and the periodic inequality of two groups of verniers is decided by the precision of the required measurement of reality, for example, the precision of actual required measurement is a millimeter, and the periodic inequality of vernier should be a millimeter; The precision of actual required measurement is a micron, and the periodic inequality of vernier just should be a micron.Vernier method only is convenient for optical check, and precision is low, is fit to more coarse technology.As stated above measurement pattern as shown in Figure 2, the left side figure is the measurement pattern of protected seam protection, right figure is unprotected measurement pattern.If adopt another method of measurement, by measurement pattern is taken pictures, carry out graphics process then, can accurately measure, in this case, two block graphicses can be the same also can be different, can measure, it is just passable that only be to the requirement of space periodic that measuring equipment can be differentiated this moment.
After having used method of measurement of the present invention, can be more accurate measure the pattern distortion amount that epitaxial growth technology causes, can improve the sign ability of the technological parameter performance of epitaxy technique on the one hand, have very great help for follow-up lithography alignment technology on the other hand, can improve the lithography alignment precision of small size extension product, become possibility thereby the size of extension product is constantly dwindled.It also can be used as a kind of means of monitoring epitaxial growth technology stability simultaneously.Whether after epitaxial growth technology is set up, it is stable to monitor epitaxially grown pattern distortion.The present invention goes for common various molecule epitaxial growth technologies in the semiconductor manufacturing, comprises silicon, germanium, the epitaxial growth of germanium/silicon etc.
Claims (7)
1, a kind of method of measuring pattern distortion in the epitaxial growth is characterized in that, comprises the steps:
(1) adopt photolithography plate A that substrate layer is carried out photoetching, etching produces two cover measurement pattern;
(2) on above-mentioned two cover measurement pattern, produce protective layer;
(3) adopt photolithography plate B that protective layer is carried out photoetching, etching makes that wherein the first cover figure is protected;
(4) epitaxial growth, the figure after the generation second cover epitaxial growth;
(5) measure the first cover figure and the second cover figure, obtain pattern distortion in the epitaxial growth through contrast.
2, the method for pattern distortion in the measurement epitaxial growth according to claim 1, it is characterized in that, in the step (5), when carrying out optical measurement, adopts by direct use microscope the vernier method measurement pattern, perhaps adopt high resolution CCD/CMOS to take pictures, accurately measure by graphics process then in conjunction with high-power microscope.
3, the method for pattern distortion in the measurement epitaxial growth according to claim 1, it is characterized in that, when adopting the vernier method measurement pattern in the step (5), the measurement pattern of use is designed to the vernier of two groups of different cycles, and the precision that the periodic inequality of two groups of verniers is measured by actual needs decides.
4, the method for pattern distortion in the measurement epitaxial growth according to claim 1; it is characterized in that; described photolithography plate B makes among the described photolithography plate A the first cover figures in the two cover measurement pattern protected; the second cover figure then can not be protected, must guarantee in etching that the protective layer that is produced by step (2) on the second cover figure is removed.
According to the method for pattern distortion in claim 1 or the 4 described measurement epitaxial growths, it is characterized in that 5, described protective layer is oxide or a nitride commonly used during semiconductor is made, or other have the material of same characteristic features.
6, the method for pattern distortion in the measurement epitaxial growth according to claim 1 is characterized in that, adopts chemical vapour deposition technique or physical vaporous deposition to produce protective layer in the step (2), and the growth of protective layer can not exerted an influence to substrate layer.
7, the method for pattern distortion in the measurement epitaxial growth according to claim 1 is characterized in that, after step (4) is finished, decides according to the contrast of final measurement pattern and the protective layer on the first cover figure to be removed or keeps.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102931219A (en) * | 2012-11-08 | 2013-02-13 | 杭州士兰集成电路有限公司 | Semiconductor device and production method thereof |
| WO2022193915A1 (en) * | 2021-03-18 | 2022-09-22 | 上海信及光子集成技术有限公司 | Method and structure for measuring before-and-after-epitaxy photolithography overlay error |
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2007
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102931219A (en) * | 2012-11-08 | 2013-02-13 | 杭州士兰集成电路有限公司 | Semiconductor device and production method thereof |
| CN102931219B (en) * | 2012-11-08 | 2015-06-10 | 杭州士兰集成电路有限公司 | Semiconductor device and production method thereof |
| WO2022193915A1 (en) * | 2021-03-18 | 2022-09-22 | 上海信及光子集成技术有限公司 | Method and structure for measuring before-and-after-epitaxy photolithography overlay error |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20131218 |
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Effective date of registration: 20131218 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |