CN101335326A - Electrically inducted resistor material for resistor type memory and preparing method thereof - Google Patents

Electrically inducted resistor material for resistor type memory and preparing method thereof Download PDF

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CN101335326A
CN101335326A CNA2008100409588A CN200810040958A CN101335326A CN 101335326 A CN101335326 A CN 101335326A CN A2008100409588 A CNA2008100409588 A CN A2008100409588A CN 200810040958 A CN200810040958 A CN 200810040958A CN 101335326 A CN101335326 A CN 101335326A
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film
resistance
preparation
electrode
strontium titanate
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张亦文
于伟东
李效民
刘新军
曹逊
杨蕊
杨长
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Shanghai Institute of Ceramics of CAS
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Shanghai Institute of Ceramics of CAS
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Abstract

The invention relates to an electrically evoked resistor material which is used for the intrinsic of a resistance-typed memory and dopes with a strontium titanate film and a preparation method thereof, and provides the material with the intrinsic of the transition characteristic of an electrically evoked resistor and doping with strontium titanate SrAxTi1-xO3 and a preparation technology, wherein, A refers to In, Ga, Mn, Sb or Ta, and the value of atomic percentage x ranges from 1 percent to 40 percent. The preparation method includes three steps: a preparation method of metal or a bottom electrode of a conductive semiconductor (such as Pt, Ir, TiN, and SrRuO3, etc.), a preparation method of the intrinsic, and a preparation method of a resistive transition film doping with strontium titanate and a metal top electrode. In different experimental conditions, the strontium titanate films of quasi monocrystalline, polycrystalline and incomplete crystallization phase are obtained, and have excellent and stable performance of high-and-low resistance state conversion and memory characteristic on the occasion of continuous voltage scanning stimulation, when materials such as Pt, Ir, Ag, Al, Ti or Mo, etc. are used as the material of the top electrode.

Description

The electricity that is used for resistance-type memory brings out resistance material and preparation method thereof
Technical field
The present invention relates to a kind ofly can realize intrinsic that reversible resistance changes and strontium titanate doping thin-film material and preparation method thereof.Belong to the information functional material field.
Background technology
Since houston, u.s.a university reported first in 2000 finds that some sull electric pulse triggers reversible resistance (EPIR:Electrical pulse induced resistance-change) effect, shown great attention to based on the exploitation of the novel resistor type random access memory (RRAM) of this effect.Compare with the RAM of other kinds, sort memory has advantages such as high access speed, low-power consumption, non-destructive are read, radioresistance, is contemplated to the non-volatility memorizer of new generation of comprehensive replacement existing market product.
Recently, electric resistance changing and memory characteristic in multiple material system, have all been found, such as rare earth manganese oxide material (La 0.7Sr 0.3MnO 3Deng), transition metal perovskite-type material (SrZrTiO 3, SrTiO 3Deng), Dyadic transition group metallic oxide material (TiO 2, NiO etc.) and organic polymer semi-conducting material (pentacene etc.).Yet existing achievement in research also has bigger distance from practical application.For the practicability of resistance-type memory, improve the resistance difference and the device stability of high low resistance state, reduce cut-in voltage (set-V) and recovery voltage (reset-V), reduction device preparation cost etc. and all be very important.At present, obtain to have that steady resistance changes and the material system of memory characteristic is the key issue that realizes that the RRAM storage further develops.
The strontium titanates of perovskite structure (STO) material has excellent physicochemical properties, is commonly employed in a lot of fields as ferroelectric, dielectric and optical material.STO at room temperature is a kind of insulator, can become superconductor during low temperature, and takes place also to can be changed into good semiconductor and conductor from cube phase transformation of cubic phase in opposite directions by suitable doping when 105K.Recently, studies show that many STO material systems all have stable electricity and bring out electric resistance changing and memory characteristic, as STO monocrystalline (document 1, KRZYSZTOFSZOT, WOLFGANG SPEIER, GUSTAV BIHLMAYER AND RAINERWASER, Nature Materials, 5 (2006), 312), (document 2, M.C.Ni, S.M.Guo such as STO film that Nb mixes, H.F.Tian, Y.G.Zhao, and J.Q.Li, Appl.Phys.Lett.91 (2007), 183502).Therefore, the STO material system utmost point promises to be the core material of realizing the RRAM storage.
Summary of the invention
The purpose of this invention is to provide and a kind ofly have the excellent stable electric resistance changing and the intrinsic and the strontium titanate doping thin-film material of memory characteristic, and prepare basic unit of storage.The present invention adopts element doping, structure regulating to realize that the electricity of strontium titanate material different characteristic brings out electric resistance changing character, thereby obtains character various various electric resistance changing material systems and storage organization unit thereof.
The object of the present invention is achieved like this:
The invention provides a kind of electricity and bring out electric resistance changing material and method thereof, it is intrinsic-OR strontium titanate doping film that the electricity that provides brings out resistance material, and the composition general formula of strontium titanate doping is SrA xTi 1-xO 3
X is an atomic percentage in the formula, and the scope of x value is 1%～40%, and A is In, Ga, Mn, Sb or Ta.
The ratio of the height resistance variations of intrinsic-OR strontium titanate doping thin-film material is 10～100 times.The preparation technology of described memory cell, this process are divided into preparation three parts of metal or conductive semiconductor hearth electrode, intrinsic and strontium titanate doping electric resistance changing film and electrode of metal.
(1) preparation of metal or conductive semiconductor hearth electrode
Method one: select monocrystalline silicon piece as basis material, being oriented to of monocrystalline silicon piece [001] adopts pulsed laser deposition to grow extension TiN film, and the about 20nm～150nm of thickness, epitaxial orientation are [001] crystal orientation.TiN depositing of thin film process parameters range is: target is the titanium nitride ceramic piece of high-purity (greater than 99.99%), and depositing temperature is 500～800 ℃, and heating rate is 1～10 ℃ of a per minute.Laser energy is at 3～7J/cm 2, deposition rate is 0.2～10nm/min, deposition pressure is lower than 10 -4Pa.
Method two: with above-mentioned TiN/Si is substrate, adopts methods such as pulsed laser deposition, magnetron sputtering or electron beam evaporation to prepare Pt, Ir, SrRuO 3Deng conductive film, film thickness is 50～200nm, and it is＜001〉crystal orientation that face is orientated (perpendicular to the direction of substrate) outward.
Method three: by the thermal oxidation single crystalline Si, form silica, further adopt magnetron sputtering priority depositing Ti and Pt thereon, form composite bottom electrode at substrate surface.This electrode has face＜001〉preferred orientation outward.
(2) intrinsic and strontium titanate doping growth for Thin Film
On above-mentioned hearth electrode, adopt methods such as pulsed laser deposition, magnetron sputtering, electron beam evaporation, molecular beam epitaxy, chemical vapour deposition (CVD) to prepare intrinsic and strontium titanate doping film SrA xTi 1-xO 3, wherein A is In, Ga, Mn, Sb or Ta, x is an atomic percentage, and the value of x from 1% to 40%.Bring out resistance switching performance in order to obtain electricity, film prepares under low oxygen pressure 0.01Pa～20Pa, and depositing temperature is 350～750 ℃, and laser energy is at 1～5J/cm 2At TiN/Si, SrRuO 3The strontium titanates that/TiN/Si electrode is grown above is an extension class monocrystal thin films, its face is oriented to outward＜and 002〉single crystal orientation, crystalline quality is good; And the film of growing on Pt/TiN/Si or Ir/TiN/Si electrode has different crystalline states under different growth temperatures: 350～500 ℃, film is the imperfect crystal state, XRD does not observe tangible peak crystallization, and more than 500 ℃, pellicular front outer for to have＜002 and＜110〉the double plane polycrystal films that are orientated outward, crystalline quality is better.
(4) preparation of electrode of metal
Adopt methods such as electron beam evaporation, thermal evaporation deposition, magnetron sputtering on strontium titanate film, to prepare the electrode of metal that diameter is 0.1mm～0.5mm (Pt, Ir, Ag, Al, Ti or Mo), make it to constitute metal electrode/STO/ hearth electrode sandwich structure.STO is the abbreviation of intrinsic strontium titanates or strontium titanate doping.
Utilize the strontium titanate film of method preparation of the present invention to have following performance:
When being upper electrode material with Pt, Ir, Ag, Al, Ti or Mo, class monocrystalline, polycrystalline and paracrystalline strontium titanate film all can be realized reversible electric resistance changing and memory characteristic, but its electric resistance changing character generally has different characteristic, as bipolarity electric resistance changing, unipolarity electric resistance changing etc.The resistance difference of high low resistance state is bigger, and the ratio of height resistance variations is generally 10～100 times, and its high resistance can reach tens kilohms, and low-resistance value is hundreds of ohm.The resistance switch threshold voltage can be reduced to below the 4V.
Description of drawings
Fig. 1 a is the Pt/SrIn of the embodiment of the invention 1 0.1Ti 0.9O 3/ TiN hearth electrode sandwich structure.
Fig. 1 b is the Pt/SrTiO of the embodiment of the invention 2 3/ Pt hearth electrode sandwich structure.
Fig. 1 c is the Pt/SrIn of the embodiment of the invention 3 0.2Ti 0.8O 3/ Pt hearth electrode sandwich structure.
Among Fig. 2 a), b) and c) be respectively SrIn in the embodiment of the invention 1 0.1Ti 0.9O 3/ TiN, SrTiO among the embodiment 2 3SrIn among/Pt and the embodiment 3 0.2Ti 0.8O 3The XRD figure of/Pt thin-film material.
Fig. 2 illustration is the SrIn of embodiment 1 0.1Ti 0.9O 3The high-energy electron diffiraction collection of illustrative plates of film shows that by the growth Real Time Observation this film has the epitaxial growth characteristic.
Fig. 3 is the Pt/SrIn of the embodiment of the invention 1 a) 0.1Ti 0.9O 3The I-E characteristic test result figure of/TiN sandwich structure has described high-impedance state (HR) and low resistance state (LR) transforming process.
B) be the Pt/SrTiO of the embodiment of the invention 2 3The voltage-current characteristic test result figure of/Pt sandwich structure.
C) be the Pt/SrIn of the embodiment of the invention 2 0.2Ti 0.8O 3The I-E characteristic test result figure of/Pt sandwich structure.
Embodiment
Below with reference to accompanying drawing of the present invention, further illustrating substantive distinguishing features of the present invention and obvious improvement, but the present invention only is confined to embodiment by no means by embodiment.
Embodiment 1:
In the pulsed laser deposition device, be matrix with monocrystalline silicon piece Si (001), be lower electrode layer with TiN with extension induction, preparation has the extension strontium titanates SrIn of the outer orientation of (001) face 0.1Ti 0.9O 3Film, its thickness are about 200nm.
Preparation TiN lower electrode layer:
Select Si (100) monocrystalline silicon piece of n type for use, clean with the silicon wafer cleaning of standard.After the hydrofluoric acid rinsing through 10% (removing surperficial natural oxidizing layer), under high pure nitrogen, dry up.Silicon chip after cleaning is put in the pulsed laser deposition equipment, underlayer temperature is risen to 600 ℃, heating rate is 10 ℃ of per minutes.Laser energy remains on 7J/cm 2With purity is that 99.99% titanium nitride is a target, with the speed of 1 pulse of per second, makes the titanium nitride membrane that thickness is 40nm.This moment, the vacuum degree of settling chamber was 10 -4Pa.The TiN film can play the lower electrode material of inducing epitaxially grown effect of doping STO and conduct conduction, shown in Fig. 1 (a).
Strontium titanate doping thin film epitaxial growth and in-situ treatment:
Adopt the SrIn of sintering preparation voluntarily 0.1Ti 0.9O 3Ceramic target (SrCO 3, TiO 2And In 2O 3High-purity powder, mixing by a certain percentage, compression moulding and sintering 12 hours under 1623K), underlayer temperature is 600 ℃, laser energy is adjusted to 3.5J/cm 2,, deposit the SrIn of 1 minute (thickness is about 5 nanometers) earlier with the speed of 1 pulse of per second 0.1Ti 0.9O 3Film.In the settling chamber, feed high purity oxygen gas (99.99%) then, make vacuum degree remain on 2Pa, and be oxygen plasma by plasma generator with the gaseous oxygen ionization, under this atmosphere with the deposited at rates of 5 pulses of per second 60 minutes, after deposition finishes with the above-mentioned SrIn for preparing 0.1Ti 0.9O 3After the film in-situ annealing 15 minutes, be cooled to room temperature with the rate of temperature fall of 10～15 ℃ of per minutes.The SrIn that obtains 0.1Ti 0.9O 3It is single-orientated that film has (001), as Fig. 2 (a); Show SrIn by high-energy electron diffiraction collection of illustrative plates Real Time Observation (Fig. 2 illustration) 0.1Ti 0.9O 3Film is the class monocrystal thin films with epitaxial growth feature; Film thickness is about 200nm.At last, utilize sputtering method to make thickness on the STO film and be 100nm, diameter is the circular Pt electrode of 0.2mm, obtains the Pt/SrIn with resistance switch characteristic 0.1Ti 0.9O 3/ TiN hearth electrode sandwich structure is shown in Fig. 1 (a).
Adopt constant-current source (Keithley 2410 SourceMeter) and digital multimeter (Keithley 2000MultiMeter) to be connected with computer, the corresponding software that passes through to be equipped with can be controlled the voltage scanning condition in real time and show resulting V-I curve.The circulating current of above-mentioned sample-voltage characteristic test result is seen Fig. 3 (a).The initial resistance of sample is high-impedance state, and resistance sizes is about 60K Ω.When top electrode loads positive voltage, be defined as the scanning forward.Voltage is during from the 0V reverse scan, and sample shows high-impedance state (HR), becomes low resistance state (LR) when voltage is higher than 1V, and resistance is in 0.3～0.4K Ω scope; When the forward scan 2V left and right sides, sample becomes high-impedance state again by low resistance state, and resistance is about 5K Ω.This sample of above test shows has ambipolar electric resistance changing and memory characteristic.
Embodiment 2:
By the thermal oxidation single crystalline Si, form SiO at substrate surface 2The spacer medium layer further adopts magnetron sputtering to prepare Pt/Ti (200nm/20nm) thereon as hearth electrode.
Utilize the pulsed deposition method to prepare the strontium titanate film of 200nm again on hearth electrode: it is 99.99% SrTiO that target is selected purity for use 3Potsherd, 500 ℃ of underlayer temperatures, laser energy is adjusted to 3.5J/cm 2, elder generation is with the speed of 1 pulse of per second, the SrTiO of in-situ deposition 1 minute (thickness is about 5nm) 3Film.In the settling chamber, feed high purity oxygen gas (99.99%) then, make vacuum degree remain on 0.01Pa, with the deposited at rates of 5 pulses of per second 60 minutes, for crystalline quality and the oxygen content that guarantees film, distribute by the input mode and the cavity space of regulating oxygen in the experiment, realized control respectively to substrate and target position oxygen concentration, the deposition finish after with the above-mentioned SrTiO for preparing 3After the film in-situ annealing 15 minutes, be cooled to room temperature with the rate of temperature fall of 10～15 ℃ of per minutes.The SrTiO that is obtained 3Film does not almost observe peak crystallization, is imperfect crystal film (as Fig. 2 (b)) that film thickness is 200nm.At last, utilize sputtering method at SrTiO 3Making thickness on the film is 100nm, and diameter is the circular Pt electrode of 0.2mm, obtains the Pt/SrTiO with resistance switch characteristic 3/ Pt hearth electrode sandwich structure is as Fig. 1 (b).
The voltage-current characteristic test result of above-mentioned sample is seen Fig. 3 (b).When top electrode loads positive voltage, be defined as the scanning forward.The initial resistance of sample is high-impedance state, resistance sizes is about 1M Ω, and electric current is during from 0mA forward scan, and sample shows high-impedance state, when being higher than 0.4mA, electric current becomes low resistance state, continuing increases electric current, and the sample sustaining voltage is constant substantially, the negative differential resistance effect occurs up to the 4mA sample, electric current continues to increase to 8mA afterwards, forward scan finishes, and sample presents low resistance state, and resistance is 0.4～0.7K Ω.When electric current during again from the 0V reverse scan to 7mA, sample becomes high-impedance state by low resistance state, and resistance sizes is 30～50K Ω.This sample of above-mentioned test shows has ambipolar electric resistance changing and memory characteristic.
Embodiment 3:
Adopt technology making substrate, hearth electrode and the top electrode identical with embodiment 2.The target of pulsed laser deposition adopts the SrIn of sintering preparation voluntarily 0.2Ti 0.8O 3Ceramic target, all the other experiment conditions are identical with the above embodiments 2.The I-E characteristic test result of sample is seen Fig. 3 (c).The initial resistance of sample is high-impedance state, and resistance sizes is about 100K Ω, and voltage begins forward scan from 0V, and sample shows high-impedance state, becomes low resistance state when voltage is higher than 3.7V, and resistance is 0.01～0.05K Ω.When voltage again when 0V is scanned up to 0.7V in the same way, sample sports high-impedance state by low resistance state, resistance sizes is 4～6K Ω; If but voltage is not then observed tangible resistance variations from the 0V reverse scan.This sample of above-mentioned test shows has unipolar electric resistance changing and memory characteristic.
Embodiment 4:
Adopt and embodiment 2 identical electrodes preparation technologies.The target of pulsed laser deposition adopts the SrMn of sintering preparation voluntarily 0.05Ti 0.95O 3Ceramic target, 600 ℃ of underlayer temperatures, laser energy is adjusted to 2.0J/cm 2,, vacuum degree remains on 0.01Pa, with the deposited at rates of 5 pulses of per second 60 minutes.The initial resistance of sample is high-impedance state, and resistance sizes is about 300K Ω, and voltage begins forward scan from 0V, and sample shows high-impedance state, becomes low resistance state when voltage is higher than 3.0V, and resistance is 0.5～0.1K Ω.When voltage again when 0V is scanned up to 0.7V in the same way, sample sports high-impedance state by low resistance state, resistance sizes is 20～35K Ω; If but voltage is not then observed tangible resistance variations from the 0V reverse scan.This sample of above-mentioned test shows has unipolar electric resistance changing and memory characteristic.
Embodiment 5:
Adopt technology making substrate, hearth electrode and the top electrode identical with embodiment 2.The target of pulsed laser deposition adopts the SrGa of sintering preparation voluntarily 0.4Ti 0.6O 3Ceramic target, all the other experiment conditions are identical with the above embodiments 2.The V-I method of testing is identical with example 2, and the result shows that this sample has unipolar electric resistance changing and memory characteristic.

Claims (9)

1, a kind of electricity that is used for resistance-type memory brings out resistance material, it is characterized in that it is intrinsic-OR strontium titanate doping film that described electricity brings out resistance material, and the composition general formula of strontium titanate doping is SrA xTi 1-xO 3
X is an atomic percentage in the formula, and the scope of x value is 1%～40%, and A is In, Ga, Mn, Sb or Ta.
2, bring out resistance material by the described electricity that is used for resistance-type memory of claim 1, the ratio that it is characterized in that the height resistance variations of intrinsic-OR strontium titanate doping thin-film material is 10～100 times.
3, bring out resistance material by the described electricity that is used for resistance-type memory of claim 2, it is characterized in that high value is tens kilohms, low resistance is hundreds of ohm, and the resistance switch threshold voltage is reduced to below the 4V.
4, the preparation electricity that is used for resistance-type memory as claimed in claim 1 brings out the method that resistance material makes up memory cell, it is characterized in that method is divided into the preparation of metal or conductive semiconductor hearth electrode, the preparation of intrinsic and strontium titanate doping electric resistance changing film and preparation three parts of electrode of metal:
(1) preparation of metal or conductive semiconductor hearth electrode, adopt in following three kinds of methods any:
Method 1: select monocrystalline silicon piece as basis material, being oriented to of monocrystalline silicon piece (001) adopted pulsed laser deposition, grows extension TiN film, and epitaxial orientation is＜001〉crystal orientation; TiN depositing of thin film process parameters range is: target is the titanium nitride ceramic piece greater than 99.99% purity, and depositing temperature is 500～800 ℃, and heating rate is 1～10 ℃ of a per minute, and laser energy is 3～7J/cm 2
Method 2: the TiN/Si with method 1 preparation is a substrate, adopts pulsed laser deposition, magnetron sputtering or electron beam evaporation method to prepare Pt, Ir or SrRuO 3Conductive film, film thickness are 50～200nm, face is oriented to outward＜and 001〉crystal orientation;
Method 3: by the thermal oxidation single crystalline Si, form silica at substrate surface, adopt magnetically controlled sputter method then, priority depositing Ti and Pt form composite bottom electrode thereon.This electrode has face＜001〉preferred orientation outward;
Described is oriented to outward perpendicular to the substrate direction;
(2) intrinsic and strontium titanate doping growth for Thin Film
On the hearth electrode that step () is made, adopt pulsed laser deposition, magnetron sputtering, electron beam evaporation, molecular beam epitaxy or chemical gaseous phase depositing process to prepare intrinsic and strontium titanate doping film SrA xTi 1-xO 3, wherein A is In, Ga, Mn, Sb or Ta, x is an atomic percentage, the value of x from 1% to 40%; Film prepares under low oxygen pressure 0.01Pa～20Pa, and depositing temperature is 350～750 ℃, and laser energy is 1～5J/cm 2
(3) preparation of electrode of metal
Adopt electron beam evaporation, thermal evaporation deposition or magnetically controlled sputter method on the intrinsic-OR strontium titanate doping film that step (two) is made, to prepare the electrode of metal that diameter is 0.1mm～0.5mm, constitute strontium titanates/hearth electrode sandwich structure that metal electrode/intrinsic-OR mixes.
5, bring out the method that resistance material is made memory cell by claim 4 is described by electricity, it is characterized in that the thickness of TiN film in metal or the preparation of conductive semiconductor hearth electrode is 20nm～150nm.
6, bring out the method that resistance material is made memory cell by claim 4 is described by electricity, the deposition rate when it is characterized in that the TiN depositing of thin film is 0.2～10nm/min, and deposition pressure is lower than 10 -4Pa.
7, bring out the method that resistance material is made memory cell by claim 4 is described by electricity, it is characterized in that TiN/Si or SrRuO 3The intrinsic-OR strontium titanate doping that/TiN/Si electrode is grown above is an extension class monocrystal thin films, its face is oriented to outward＜and 002〉single crystal orientation, described is oriented to outward perpendicular to the substrate direction.
8, bring out the method that resistance material is made memory cell by claim 4 is described by electricity, it is characterized in that the film of growing has different crystalline states according to different growth temperatures on Pt/TiN/Si or Ir/TiN/Si electrode, wherein 350～500 ℃ the time, film is the imperfect crystal state, outside pellicular front more than 500 ℃ for to have＜002 and＜110〉double plane outside the orientation polycrystal film, described is oriented to outward perpendicular to the substrate direction.
9, bring out the method that resistance material is made memory cell by claim 4 is described by electricity, it is characterized in that the electrode of metal described in the step (three) is Pt, Ir, Ag, Al, Ti or Mo.
CNA2008100409588A 2008-07-24 2008-07-24 Electrically inducted resistor material for resistor type memory and preparing method thereof Pending CN101335326A (en)

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CN101894908A (en) * 2010-06-01 2010-11-24 中山大学 Resistive random access memory and preparation method thereof
CN102181833A (en) * 2011-06-10 2011-09-14 电子科技大学 Method for epitaxially growing strontium titanate (STO) thin film on gallium arsenide (GaAs) substrate
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CN102110774B (en) * 2009-11-12 2013-11-06 中国人民解放军国防科学技术大学 Method for preparing non-volatile memory array
CN101894908A (en) * 2010-06-01 2010-11-24 中山大学 Resistive random access memory and preparation method thereof
CN102181833A (en) * 2011-06-10 2011-09-14 电子科技大学 Method for epitaxially growing strontium titanate (STO) thin film on gallium arsenide (GaAs) substrate
CN102487124A (en) * 2011-09-19 2012-06-06 中国科学院物理研究所 Nanometer multilayer film, field-effect tube, sensor, random access memory and preparation method
CN102487124B (en) * 2011-09-19 2014-07-23 中国科学院物理研究所 Nanometer multilayer film, field-effect tube, sensor, random access memory and preparation method
CN102544366A (en) * 2012-02-29 2012-07-04 天津大学 Resistance switch based on cobalt ferrite nano-film and preparation method therefor
CN102544366B (en) * 2012-02-29 2013-11-13 天津大学 Resistance switch based on cobalt ferrite nano-film and preparation method therefor
CN107287563A (en) * 2016-03-31 2017-10-24 中国科学院上海硅酸盐研究所 A kind of extension stronitum stannate cobalt thin film and preparation method thereof
CN107910441A (en) * 2017-11-29 2018-04-13 中国地质大学（武汉） 200 orientation TiN electrodes and its application on resistive formula memory is prepared
CN108447983A (en) * 2018-03-23 2018-08-24 西南大学 Low power consumption resistance switch memory cell and its preparation method and application based on strontium titanate doping film
CN108447983B (en) * 2018-03-23 2020-01-31 西南大学 Low-power-consumption resistance switch storage unit based on doped strontium titanate film and preparation method and application thereof
CN109449289A (en) * 2018-11-01 2019-03-08 中国科学院宁波材料技术与工程研究所 A kind of bionical memristor of the nerve synapse of light stimulus and preparation method thereof

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Application publication date: 20081231