CN101335315B - Light-emitting component having improved electrode construction - Google Patents
Light-emitting component having improved electrode construction Download PDFInfo
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- CN101335315B CN101335315B CN2007101126609A CN200710112660A CN101335315B CN 101335315 B CN101335315 B CN 101335315B CN 2007101126609 A CN2007101126609 A CN 2007101126609A CN 200710112660 A CN200710112660 A CN 200710112660A CN 101335315 B CN101335315 B CN 101335315B
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Abstract
The invention provides a light-emitting element of a modified electrode structure which comprises an electrode pattern with first conductivity and an electrode pattern with second conductivity. The electrode pattern with the first conductivity comprises at least one first-time electrode pattern and the electrode pattern with the second conductivity comprises at least one second-time electrode pattern. At least one of the first-time electrode patterns is extended from a part thereof in a closed shape and corresponds to a part of the second-time electrode pattern to the part thereof which is enclosed by another part of the second-time electrode pattern so as to be in the enclosed shape and the distance between each part of the electrode pattern with the first conductivity and each corresponding part of the electrode pattern with the second conductivity is generally the same.
Description
Technical field
The invention relates to a kind of light-emitting component; Particularly, can promote CURRENT DISTRIBUTION (current spreading) characteristic by its improved electrode construction, to increase this emitting component and luminosity relevant for a kind of light-emitting component of tool improved electrode construction.
Background technology
Light-emitting diode is one of important now solid-state light emitting element, and it is a light with current conversion.Light-emitting diode mainly comprises a luminescent layer between a p type semiconductor layer and a n type semiconductor layer.Drive current is to bestow being electrically connected in respectively that this p type semiconductor layer and a P type of this n type semiconductor layer are electric to be contacted with one the N type is electric contacts, use and make this p type semiconductor layer and this n type semiconductor layer penetrate electric hole and electronics respectively to this luminescent layer, and electric hole gives out light after this luminescent layer combines from this luminescent layer with electronics and sends from all directions, and leaves through this LED surface.Increasing light-emitting diode size and light-emitting area thereof is the practice that improves this lumination of light emitting diode efficient and luminosity.But with the conventional nitride light-emitting diode, can't all be distributed to this luminescent layer from electric contact is even effectively, make the making of this iii-nitride light emitting devices size be restricted owing to consider electric current.For example, P type nitride semiconductor layer has relatively low conductivity, make that bestowing electric current in the electric contact of P type will only can be distributed to the limited area that is positioned at this P type nitride semiconductor layer below the electric contact of this P type, and electric current can lateral distribution to whole P type nitride semiconductor layer, and therefore this light-emitting diode can produce local pyrexia, makes that the element material is done sth. in advance deterioration around the electric contact.Though have preferable conductivity as for n type nitride semiconductor layer, it still has some resistives for the electric current lateral distribution.Along with the increase of light-emitting diode size, the ability from the electric contact evenly distributing electric current of N type to this n type nitride semiconductor layer can reduce gradually.Therefore, the making of conventional nitride light-emitting diode size can be subject to the influence of the electric current lateral distribution characteristic of this P type nitride semiconductor layer and this n type nitride semiconductor layer.
In view of the above, how improving the electric current lateral distribution ability of traditional light-emitting diode, with luminous efficiency and the luminosity that improves traditional light-emitting diode, is an important topic of light-emitting diode industry now.
Summary of the invention
The light-emitting component that the purpose of this invention is to provide a kind of tool improved electrode construction, can improve the current distribution characteristic of the p type semiconductor layer and the n type semiconductor layer of this light-emitting component by the design of this improved electrode construction, with power output and the luminous flux that increases this light-emitting component, and then improve its luminous intensity.
The light-emitting component of tool improved electrode construction provided by the invention comprises that a tool first conductive electrode pattern reaches a tool second conductive electrode pattern and partly exposes to the open air on the area in a tool second conductive semiconductor layer on a tool first conductive semiconductor layer.This tool first conductive electrode pattern comprises at least one electrode pattern for the first time, and this tool second conductive electrode pattern comprises at least one electrode pattern for the second time.This at least one first time electrode pattern be from respect to one this second time electrode pattern some be close-shaped part extend to by this second time electrode pattern another partly surround and be and be closed shape partly, and this tool first conductive electrode pattern each partly with the corresponding part of this tool second conductive electrode pattern between distance identical haply, and then promote the current distribution characteristic of this tool first conductive semiconductor layer and this tool second conductive semiconductor layer.Moreover, the sub-electrode design of this tool first conductive electrode pattern of the present invention and this tool second conductive electrode pattern can not have any sharp-pointed curvature (sharpcurvature) on geometry, therefore can avoid light-emitting component near the sharp-pointed curvature part of electrode, to produce high electric field point (high field point), further can improve the luminous uniformity of light-emitting component of the present invention.
The design of improved electrode construction of the present invention is suitable for the light-emitting component of general standard size and makes or the making of light-emitting component greatly.
In the present invention's one specific embodiment, this light-emitting component comprise a tool first conductive semiconductor layer, a tool second conductive semiconductor layer, a luminescent layer between this tool first conductive semiconductor layer and this tool second conductive semiconductor layer, a substrate is positioned at this tool second conductive semiconductor layer below, a tool first conductive electrode pattern is formed at this tool first conductive semiconductor layer top, and the part that a tool second conductive electrode pattern is formed at this tool second conductive semiconductor layer exposes to the open air on the area.This tool first conductive electrode pattern comprises at least one electrode pattern for the first time, and this tool second conductive electrode pattern comprises at least one electrode pattern for the second time.At least one this of electrode pattern of this tool first conductive electrode pattern first time be from respect to one this second time electrode pattern some be close-shaped part extend to by this second time electrode pattern another partly surround and be and be closed shape partly, and this tool first conductive electrode pattern each partly with the corresponding part of this tool second conductive electrode pattern between distance identical haply.
Except promoting the light-emitting component current distribution characteristic, the present invention further provides a kind of light-emitting component of tool improved electrode construction for increasing the luminescent layer area in another specific embodiment, and it comprises: a tool first conductive semiconductor layer; One luminescent layer is formed at this tool first conductive semiconductor layer below; One tool, the second conductive semiconductor layer is formed at this luminescent layer below; One substrate is positioned at this tool second conductive semiconductor layer below; One tool, the first conductive electrode pattern, be formed at this tool first conductive semiconductor layer top and with its electrical contact, this tool first conductive electrode pattern comprises at least one electrode pattern for the first time; One tool, the second conductive electrode pattern, be formed at this tool first conductive semiconductor layer top, this tool second conductive electrode pattern comprises at least one electrode pattern for the second time, this tool second conductive electrode pattern has plurality of through holes and is distributed in its below and extends to this tool second conductive semiconductor layer down, wherein this tool first conductive electrode pattern at least one should the first time electrode pattern be from respect to one this second time electrode pattern some be close-shaped part extend to by this second time electrode pattern another partly surround and be and be closed the shape part; Reach a plurality of tool second conductivity contacts and be formed in the described through hole, and each this tool second conductivity contact only electrically connects this tool second conductive electrode pattern and this tool second conductive semiconductor layer.
In this specific embodiment, this light-emitting component only has this tool first conductive semiconductor layer of part of corresponding described through hole and this luminescent layer of part to be etched to this tool second conductive semiconductor layer, so the light-emitting area of this light-emitting component is further increased, and further improve luminous intensity.
Description of drawings
Fig. 1 is the schematic perspective view of first specific embodiment of the light-emitting component of tool improved electrode construction of the present invention;
Fig. 2 is the schematic diagram of looking squarely of first specific embodiment of the light-emitting component of tool improved electrode construction of the present invention;
Fig. 3 is the schematic perspective view of second specific embodiment of the light-emitting component of tool improved electrode construction of the present invention;
Fig. 4 is the schematic diagram of looking squarely of second specific embodiment of the light-emitting component of tool improved electrode construction of the present invention;
Fig. 5 is the schematic perspective view of the 3rd specific embodiment of the light-emitting component of tool improved electrode construction of the present invention;
Fig. 6 is the schematic diagram of looking squarely of the 3rd specific embodiment of the light-emitting component of tool improved electrode construction of the present invention;
Fig. 7 is the schematic perspective view of the 4th specific embodiment of the light-emitting component of tool improved electrode construction of the present invention;
Fig. 8 is the schematic diagram of looking squarely of the 4th specific embodiment of the light-emitting component of tool improved electrode construction of the present invention;
Fig. 9 changes the schematic diagram of looking squarely of example for one of light-emitting component the 4th specific embodiment of tool improved electrode construction of the present invention;
Figure 10 is the schematic perspective view of the 5th specific embodiment of the light-emitting component of tool improved electrode construction of the present invention;
Figure 11 is the schematic diagram of looking squarely of the 5th specific embodiment of the light-emitting component of tool improved electrode construction of the present invention;
Figure 12 is the schematic perspective view of the 6th specific embodiment of the light-emitting component of tool improved electrode construction of the present invention;
Figure 13 is the schematic diagram of looking squarely of the 6th specific embodiment of the light-emitting component of tool improved electrode construction of the present invention;
Figure 14 is the schematic perspective view of a variation example of first specific embodiment of the light-emitting component of tool improved electrode construction of the present invention; And
Figure 15 A to Figure 15 C is the various variation examples of reflector structure of the present invention.
Drawing reference numeral:
10,30,50,70,80,90----light-emitting component
101,301,502,702,801----P type semiconductor layer
102,303,504,704,803----N type semiconductor layer
103,302,503,703,802----luminescent layer
104,304,505,705,804----substrate
105,305,506,706,805----P type electrode pattern
106,306,507,707,806----N type electrode pattern
105a, 506b----distortion S type electrode pattern
S type electrode pattern is inverted in 105b, 506b----distortion
1050,1052,5060,5062----finger electrode
107,307,510,710----first contact mat
108,308,512,712----second contact mat
109,309,513,713----aligned in position mark
110----reflector 111----metal level
112----printing opacity dielectric layer 113----Bragg reflector
113a, 113b----printing opacity dielectric layer
305a, 305b, 706a, 706b----arcuation electrode
305c, 706c----are inverted the y-branch electrode
501,701----first insulating barrier
508,708----second insulating barrier
509,709----N type contact
5070,7070----through hole
805a----distortion E type electrode pattern
E type electrode pattern is inverted in the 805b----distortion
8051,8052----L type branch electrodes
The 807----first contact mat 808----second contact mat
The 901----first insulating barrier 902----P type semiconductor layer
903----luminescent layer 904----N type semiconductor layer
905----substrate 906----P type electrode pattern
907----N type electrode pattern 908----through hole
The contact of the 909----second insulating barrier 910----N type
906a----distortion E type electrode pattern
E type electrode pattern is inverted in the 906b----distortion
The 911----first contact mat 912----second contact mat
9061,9062----L type branch electrodes
Embodiment
The light-emitting component of tool improved electrode construction of the present invention will be described in detail as follows by following specific embodiment conjunction with figs..
Fig. 1 and Fig. 2 are for the schematic perspective view of one first specific embodiment of the light-emitting component of tool improved electrode construction of the present invention and look squarely schematic diagram.In first specific embodiment, the light-emitting component 10 of tool improved electrode construction of the present invention comprises a p type semiconductor layer 101, a n type semiconductor layer 102, a luminescent layer 103, a substrate 104, a P type electrode pattern 105 and a N type electrode pattern 106.This luminescent layer 103 is between this p type semiconductor layer 101 and this n type semiconductor layer 102, and this substrate 104 is positioned at this n type semiconductor layer 102 belows.This P type electrode pattern 105 is formed at this p type semiconductor layer 101 tops, this P type electrode pattern 105 comprises a distortion S type electrode pattern 105a and S type electrode pattern 105b is inverted in a distortion, and a pair of finger electrode 1050,1052 extends towards this N type electrode pattern 106 along these p type semiconductor layer 101 peripheries from this S type electrode pattern 105a and this end of being inverted S type electrode pattern 105b respectively.This S type electrode pattern 105a and this inversion S type electrode pattern 105b are enantiomorphic relationship and are electrically connected to each other.The part that this N type electrode pattern 106 is formed at this n type semiconductor layer 102 exposes to the open air on the area, and this N type electrode pattern 106 is matching relationship with this P type electrode pattern 105 so that this P type electrode pattern 105 each partly with these N type electrode pattern 106 corresponding parts between distance identical haply.A pair of first contact mat 107 is formed at this S type electrode pattern 105a and this inversion S type electrode pattern 105b some near these light-emitting component 10 peripheries respectively, this to first contact mat, 107 usefulness so that this P type electrode pattern 105 and electric contact of external world's generation.A pair of second contact mat 108 is formed at the some of this N type electrode pattern 106 near these light-emitting component 10 peripheries respectively, this to second contact mat, 108 usefulness so that this N type electrode pattern 106 and electric contact of external world's generation.Should be good to heal far to first contact mat 107 and this position to second contact mat 108 from light-emitting zone.In other words, should be to first contact mat 107 and second contact mat, the 108 preferable counter electrode outer rim parts that are formed near this light-emitting component crystal grain edge, be beneficial to follow-up routing technology (wire bonding process), and then the bonding wire that prevents to be soldered to aforementioned first contact mat 107 and second contact mat 108 stops the emergent light of this light-emitting component crystal grain end face.Considering that this p type semiconductor layer 101 generally has under the situation of higher electric resistivity, the present invention can form current distribution layer (current spreadinglayer) (not shown) of a printing opacity earlier above this p type semiconductor layer 101, and makes the electric current of this P type electrode pattern 105 can be distributed in this p type semiconductor layer 101 more equably by this current distribution layer.But the metal oxide layer of this current distribution layer titanium nitride (TiN) layer or a printing opacity, for example tin indium oxide (Indium Tin Oxides (ITO)) layer, chromium titanium oxide (Chromium Titanium Oxide, CTO), tin ash: antimony (SnO
2: Sb), gallic oxide: tin (Ga
2O
3: Sn), nickel oxide (NiO), indium oxide: zinc (In
2O
3: Zn), the silver oxide indium: tin (AgInO
2: Sn), cupric oxide aluminium (CuAlO
2), lanthanum copper oxygen sulphur (LaCuOS), cupric oxide gallium (CuGaO
2), strontium oxide strontia copper (SrCu
2O
2), manganese oxide (MnO), cupric oxide (CuO), tin oxide (SnO) or gallium nitride (GaN).
Light-emitting component of the present invention can be selected from following any one: light-emitting diode, luminous heterojunction (lightemitting heterojunctions), luminescent quantum well construction and other luminous solid-state element.Light-emitting component of the present invention can adopt any suitable material system, comprise for example II-VI material system and III-V material system, as III-th family nitride (III-nitride) system, III-th family phosphide (III-phosphide) system and III-th family arsenide (III-arsenide) system.This P type electrode pattern 105 and this N type electrode pattern 106 are good with the material with low-resistivity and low light absorption degree.For example with regard to the light-emitting component of III-th family nitride system, the material of this P type electrode pattern 105 can be silver, aluminium, gold, rhodium or platinum, and the material of this N type electrode pattern 106 can be aluminium or silver.With regard to the light-emitting component of III-th family phosphide system, the material of this P type electrode pattern 105 can be gold/kirsite, gold/beryllium alloy, aluminium, platinum, palladium, rhodium or silver, and the material of this N type electrode pattern 106 can be gold/single alloy, gold/ashbury metal, gold/germanium alloy, silver, aluminium, platinum, rhodium or palladium.
Moreover, can the etching mode form a plurality of aligned in position marks (alignment key) 109 among the present invention in these substrate 104 periphery appropriate locations, carry out the reference position of pattern identification (patternrecognition) as this light-emitting component 10.For example, the aforementioned location alignment mark 109 preferable high light reflectivity zones that are formed at this light-emitting component 10 in these light-emitting component 10 back segment packaging technologies, set up a reference position with relative first contact mat 107 and second contact mat 108, be beneficial to the carrying out of this light-emitting component crystal grain welding and routing technology.In other words, the present invention utilizes aforementioned location alignment mark 109 as the reference position, can on this light-emitting component 10, carry out fast and accurately pattern do knowledge, quickening the packaging technology that back segment relates to crystal grain welding and routing, and then improve the productive rate of this light-emitting component 10.With regard to this light-emitting component 10, the relative position of this p type semiconductor layer 101 and this n type semiconductor layer 102 can exchange, and the conductivity of this P type electrode pattern 105 and this N type electrode pattern 106 is also exchanged thereupon.On the other hand, the shape of this P type electrode pattern 105 and this N type electrode pattern 106 is also interchangeable.
Fig. 3 and Fig. 4 are for the schematic perspective view of one second specific embodiment of the light-emitting component of tool improved electrode construction of the present invention and look squarely schematic diagram.In second specific embodiment, the light-emitting component 30 of tool improved electrode construction of the present invention comprises a p type semiconductor layer 301, a luminescent layer 302, a n type semiconductor layer 303, a substrate 304, a P type electrode pattern 305 and a N type electrode pattern 306.This luminescent layer 302 is between this p type semiconductor layer 301 and this n type semiconductor layer 303, and this substrate 304 is positioned at this n type semiconductor layer 303 belows.This P type electrode pattern 305 is formed at this p type semiconductor layer 301 tops, this P type electrode pattern 305 comprises a pair of arcuation electrode 305a and the 305b that are electrically connected to each other and reaches by this inversion y-branch electrode 305c to extending towards light-emitting area in the middle of arcuation electrode 305a and the 305b, and two branches of this inversion y-branch electrode 305c have radian.The part that this N type electrode pattern 306 is formed at this n type semiconductor layer 303 exposes to the open air on the area.These N type electrode pattern 306 shapes and this P type electrode pattern 305 shapes are matching relationship, shortening the distance between this P type electrode pattern 305 and this N type electrode pattern 306, and make this P type electrode pattern 305 each partly with these N type electrode pattern 306 corresponding parts between distance identical haply.One first contact mat 307 is formed at this periphery to close this light-emitting component 30 in the middle of arcuation electrode 305a and the 305b, uses so that this P type electrode pattern 305 and electric contact of extraneous generation.One second contact mat 308 is formed at a symmetrical position of this N type electrode pattern 306 and the periphery of close this light-emitting component 30, uses so that this N type electrode pattern 306 and electric contact of extraneous generation.The position of this first contact mat 307 and this second contact mat 308 is good far with the distance light-emitting zone.In other words, should be to first contact mat 307 and second contact mat, the 308 preferable counter electrode parts that are formed near this light-emitting component crystal grain edge, be beneficial to follow-up routing technology (wire bondingprocess), and then the bonding wire that prevents to be soldered to aforementioned first contact mat 307 and second contact mat 308 stops the emergent light of this light-emitting component crystal grain end face.Be same as aforementioned first specific embodiment, can add a printing opacity current distribution layer (not shown) on this p type semiconductor layer 301, use the lateral distribution ability that promotes these P type electrode pattern 305 electric currents, and then promote the CURRENT DISTRIBUTION uniformity of this p type semiconductor layer 301.
In second specific embodiment, the present invention can the etching mode form an aligned in position mark (alignment key) 309 respectively in two corners of this substrate 304, to carry out the reference position of pattern identification (pattern recognition) as this light-emitting component 30.With regard to this light-emitting component 30, the relative position of this p type semiconductor layer 301 and this n type semiconductor layer 303 can exchange, and the conductivity of this P type electrode pattern 305 and this N type electrode pattern 306 is also exchanged thereupon.The shape of this P type electrode pattern 305 and this N type electrode pattern 306 is also interchangeable.
Second specific embodiment has different shaped design with maximum different being in both P type electrode pattern and N type electrode pattern of the light emitting element structure of first specific embodiment, thereby collocation produces electric contact mat position and the quantity that contacts and adjusts thereupon with extraneous, and is marked at suprabasil position for the aligned in position of pattern identification effect and also adjusts.Each layer material of this light-emitting component 30 of second specific embodiment is identical with this light-emitting component 10 of first specific embodiment, no longer repeats at this.
The design concept that the light-emitting component of tool improved electrode construction of the present invention has a plurality of shaped form branch electrodes respectively by P type electrode pattern and N type electrode pattern and the two shape is matched each other, provide this light-emitting component following advantage: (1) makes p type semiconductor layer and n type semiconductor layer have better electric current lateral distribution ability, to improve this two-layer CURRENT DISTRIBUTION uniformity, with luminous efficiency and the luminosity of promoting this luminescent layer; (2) P type electrode pattern and N type electrode pattern distance between the two are consistent haply, to increase the uniformity of current density of luminescent layer, to improve the luminous uniformity of this luminescent layer; And (3) avoid having the high electric field action that sharp-pointed curvature (sharp curves) is produced because of electrode.
On the other hand, following other specific embodiment of the present invention can increase the luminescent layer area simultaneously except the current distribution characteristic that can improve light-emitting component.
Fig. 5 and Fig. 6 are for the schematic perspective view of the 3rd specific embodiment of the light-emitting component of tool improved electrode construction of the present invention and look squarely schematic diagram.In the 3rd specific embodiment, the light-emitting component 50 of tool improved electrode construction of the present invention comprises one first insulating barrier 501, a p type semiconductor layer 502, a luminescent layer 503, a n type semiconductor layer 504, a substrate 505, a P type electrode pattern 506, a N type electrode pattern 507, one second insulating barrier 508 and a plurality of N type contact 509.This p type semiconductor layer 502 is formed at this first insulating barrier, 501 belows, and this luminescent layer 503 is formed at this p type semiconductor layer 502 belows, and this n type semiconductor layer 504 is formed at this luminescent layer 503 belows, and this substrate 505 is positioned at this n type semiconductor layer 504 belows.This P type electrode pattern 506 is formed in this first insulating barrier 501 and with this p type semiconductor layer 502 and electrically contacts, this P type electrode pattern 506 comprises a distortion S type electrode pattern 506a and S type electrode pattern 506b is inverted in a distortion, wherein this S type electrode pattern 506a and this inversion S type electrode pattern 506b are enantiomorphic relationship and are electrically connected to each other, and a pair of finger electrode 5060,5062 extends towards this N type electrode pattern 507 along these first insulating barrier, 501 peripheries from this S type electrode pattern 506a and this end of being inverted S type electrode pattern 506b respectively.This N type electrode pattern 507 is formed at this first insulating barrier, 501 tops, this N type electrode pattern 507 is matching relationship with this P type electrode pattern 506, to shorten the distance between this P type electrode pattern 506 and this N type electrode pattern 507, and each is partly identical haply with the corresponding distance between partly of this N type electrode pattern 507 to make this P type electrode pattern 506, and this N type electrode pattern 507 has plurality of through holes 5070 and is distributed in below it and extends downward this n type semiconductor layer 504 from this first insulating barrier 501 along its pattern form.The cross sectional shape of aforementioned through-hole 5070 still can be Elliptical circle, square or rectangle except circle.This second insulating barrier 508 is formed at the internal perisporium of each this through hole 5070, and this second insulating barrier 508 can be selected from following arbitrary dielectric material: silicon dioxide, glass (glass) and rotary coating glass (Spin on Glass).Described N type contact 509 is formed in the described through hole 5070, to electrically connect this N type electrode pattern 507 and this n type semiconductor layer 504.In addition, this first insulating barrier 501 also can be formed at the internal perisporium of each this through hole 5070 when being formed at these p type semiconductor layer 502 tops, and also promptly this second insulating barrier 508 is same one deck with this first insulating barrier 501.
On the other hand, this first insulating barrier 501 and second insulating barrier 508 also can be air, in the case, this P type electrode pattern 506 directly is formed on this p type semiconductor layer 502, and this N type electrode pattern 507 electrically contacts with this n type semiconductor layer 504 by described N type contact 509, and this N type electrode pattern 507 by air as the insulation material and with these p type semiconductor layer 502 electrical isolation, described N type contacts 509 peripheries and also does electrical isolation by air.
This P type electrode pattern 506 comprises the periphery that a pair of first contact mat 510 connects this S type electrode pattern 506a and this inversion S type electrode pattern 506b and close this first insulating barrier 501 respectively, so that this P type electrode pattern 506 and extraneous electric the contact to be provided.Should be that the high light reflectivity district is good more also with the distance light-emitting zone to the position of first contact mat 510.This N type electrode pattern 507 comprises two corners of a pair of second contact mat 512 near this first insulating barrier 501, so that this N type electrode pattern 507 and extraneous electric the contact to be provided.Similarly, should be to first contact mat 510 and second contact mat, the 512 preferable counter electrode outer rim parts that are formed near this light-emitting component crystal grain edge, be beneficial to follow-up routing technology (wirebonding process), and then the bonding wire that prevents to be soldered to aforementioned first contact mat 510 and second contact mat 512 stops the emergent light of this light-emitting component crystal grain end face.Be same as aforementioned specific embodiment, can add a printing opacity current distribution layer (not shown) on this p type semiconductor layer 502, the printing opacity current distribution layer is electric contacts with this to make this P type electrode pattern 506, use the lateral distribution ability that promotes these P type electrode pattern 506 electric currents, and then promote the CURRENT DISTRIBUTION uniformity of this p type semiconductor layer 502.
In the 3rd specific embodiment, the present invention can the etching mode form an aligned in position mark (alignment key) 513 respectively in two corners of this substrate 505, carry out the reference position of pattern identification (pattern recognition) as this light-emitting component 50.With regard to this light-emitting component 50, the relative position of this p type semiconductor layer 502 and this n type semiconductor layer 504 can exchange, and the conductivity of this P type electrode pattern 506 and this N type electrode pattern 507 is also exchanged thereupon.The shape of this P type electrode pattern 506 and this N type electrode pattern 507 is also interchangeable.
Please refer to Fig. 2 and Fig. 6, the light-emitting component 50 of the 3rd specific embodiment and the light-emitting component of first specific embodiment 10 be different to be in this P type electrode pattern 506 of the light-emitting component 50 of the 3rd specific embodiment and to be formed in this first insulating barrier 501, and this N type electrode pattern 507 is formed on this first insulating barrier, 501 tops, 501 pairs of this first insulating barriers should P type electrode pattern 506 partly be through being etched to this p type semiconductor layer 502, so that this this p type semiconductor layer 502 of P type electrode pattern 506 electric contacts.This first insulating barrier 501, this p type semiconductor layer 502 and this luminescent layer 503 only have the part to described through hole 5070 that should N type electrode pattern 507 to be etched to remove to this n type semiconductor layer 504, and be formed in the described through hole 5070 by aforementioned N type contact 509, to be electrically connected this N type electrode pattern 507 and this n type semiconductor layer 504.As in first specific embodiment, this P type electrode pattern 105 of this light-emitting component 10 and this N type electrode pattern 106 are respectively formed at and reach on this p type semiconductor layer 101 by on this n type semiconductor layer 102 of part that exposes to the open air.That is to say, 103 pairs of this p type semiconductor layer 101 and this luminescent layers should N type electrode pattern 106 and the part of described second contact mat 108 be etched and remove to this n type semiconductor layer 102 so that this N type electrode pattern 106 and described this n type semiconductor layer 102 of second contact mat, 108 electric contacts.So the light-emitting component 30 of the 3rd specific embodiment is compared to the light-emitting component 10 of first specific embodiment, its light-emitting area can relatively increase, and further improves the luminous efficiency and the luminous intensity of this light-emitting component 30.
Fig. 7 and Fig. 8 are for the schematic perspective view of the 4th specific embodiment of the light-emitting component of tool improved electrode construction of the present invention and look squarely schematic diagram.In the 4th specific embodiment, the light-emitting component 70 of tool improved electrode construction of the present invention comprises one first insulating barrier 701, a p type semiconductor layer 702, a luminescent layer 703, a n type semiconductor layer 704, a substrate 705, a P type electrode pattern 706, a N type electrode pattern 707, one second insulating barrier 708 and a plurality of N type contact 709.This p type semiconductor layer 702 is formed at this first insulating barrier, 701 belows, and this luminescent layer 703 is formed at this p type semiconductor layer 702 belows, and this n type semiconductor layer 704 is formed at this luminescent layer 703 belows, and this substrate 705 is positioned at this n type semiconductor layer 704 belows.This P type electrode pattern 706 is formed in this first insulating barrier 701 and with this p type semiconductor layer 702 and electrically contacts.That is to say that the part that 701 pairs of this first insulating barriers should P type electrode pattern 706 removes to this p type semiconductor layer 702 through etching, so that this this p type semiconductor layer 702 of P type electrode pattern 706 electric contacts.This P type electrode pattern 706 comprises a pair of arcuation electrode 706a and the 706b that are electrically connected to each other and reaches by this inversion y-branch electrode 706c to extending towards light-emitting area in the middle of arcuation electrode 706a and the 706b, and two branches of this inversion y-branch electrode 706c are arcuation.This N type electrode pattern 707 is formed at this first insulating barrier, 701 tops, this N type electrode pattern 707 is matching relationship with this P type electrode pattern 706, shortening the distance between this P type electrode pattern 706 and this N type electrode pattern 707, and make this P type electrode pattern 706 each partly with these N type electrode pattern 707 corresponding parts between distance identical haply.This N type electrode pattern 707 has plurality of through holes 7070 and is distributed in its below and extends downward this n type semiconductor layer 704 from this first insulating barrier 701 along its pattern form.The cross sectional shape of aforementioned through-hole 7070 still can be Elliptical circle, square or rectangle except circle.This second insulating barrier 708 is formed at the internal perisporium of each this through hole 7070, and this second insulating barrier 708 can be to be selected from following arbitrary dielectric material: silicon dioxide, glass (glass) and rotary coating glass (Spin on Glass).And described N type contact 709 is formed in the described through hole 7070, to electrically connect this N type electrode pattern 707 and this n type semiconductor layer 704.In addition, this first insulating barrier 701 also can be formed at the internal perisporium of each this through hole 7070 when being formed at these p type semiconductor layer 702 tops, and also promptly this second insulating barrier 708 is same one deck with this first insulating barrier 701.On the other hand, this first insulating barrier 701 and second insulating barrier 708 also can be air, in the case, this P type electrode pattern 706 directly is formed on this p type semiconductor layer 702, and this N type electrode pattern 707 electrically contacts with this n type semiconductor layer 704 by described N type contact 709, and this N type electrode pattern 707 by air as the insulation material and with these p type semiconductor layer 702 electrical isolation, described N type contacts 709 peripheries and also does electrical isolation by air.One first contact mat 710 is formed at this periphery to close this light-emitting component 70 in the middle of arcuation electrode 706a and the 706b, uses so that this P type electrode pattern 706 and electric contact of extraneous generation.One second contact mat 712 is formed at a symmetrical position of this N type electrode pattern 707 and the periphery of close this light-emitting component 70, uses so that this N type electrode pattern 707 and electric contact of extraneous generation.It is good healing far away and be positioned at high retroreflective regions with the distance light-emitting zone in the position of this first contact mat 710 and this second contact mat 712.In other words, should be to first contact mat 710 and second contact mat, the 712 preferable counter electrode parts that are formed near this light-emitting component crystal grain edge, be beneficial to follow-up routing technology (wire bonding process), and then the bonding wire that prevents to be soldered to aforementioned first contact mat 710 and second contact mat 712 stops the emergent light of this light-emitting component crystal grain end face.Be same as aforementioned second specific embodiment, can add a printing opacity current distribution layer (not shown) on this p type semiconductor layer 702, make this this printing opacity current distribution layer of P type electrode pattern 706 electric contacts, use the lateral distribution ability that promotes these P type electrode pattern 706 electric currents, and then promote the CURRENT DISTRIBUTION uniformity of this p type semiconductor layer 702.
In the 4th specific embodiment, the present invention can the etching mode form an aligned in position mark (alignment key) 713 respectively in two corners of this substrate 705, carry out the reference position of pattern identification (pattern recognition) as this light-emitting component 70.With regard to this light-emitting component 70, the relative position of this p type semiconductor layer 702 and this n type semiconductor layer 704 can exchange, and the conductivity of this P type electrode pattern 706 and this N type electrode pattern 707 is also exchanged thereupon.The shape of this P type electrode pattern 706 and this N type electrode pattern 707 is also interchangeable.
Please refer to Fig. 4 and Fig. 8, the light-emitting component 70 of the 4th specific embodiment and the light-emitting component of second specific embodiment 30 be different to be in this P type electrode pattern 706 of the light-emitting component 70 of the 4th specific embodiment and to be formed in this first insulating barrier 701, and this N type electrode pattern 707 is formed on this first insulating barrier, 701 tops, 701 pairs of this first insulating barriers should P type electrode pattern 706 part through being etched to this p type semiconductor layer 702, so that this this p type semiconductor layer 702 of P type electrode pattern 706 electric contacts.This first insulating barrier 701, this p type semiconductor layer 702 and this luminescent layer 703 only have the part to described through hole 7070 that should N type electrode pattern 707 to be etched to remove to this n type semiconductor layer 704, and be formed in the described through hole 7070 by aforementioned N type contact 709, to be electrically connected this N type electrode pattern 707 and this n type semiconductor layer 704.As in second specific embodiment, this P type electrode pattern 305 of this light-emitting component 30 and this N type electrode pattern 306 are respectively formed at and reach on this p type semiconductor layer 301 by on this n type semiconductor layer 303 of part that exposes to the open air.That is to say, 302 pairs of this p type semiconductor layer 301 and this luminescent layers should N type electrode pattern 306 and the part of this second contact mat 308 be etched and remove to this n type semiconductor layer 303 so that this N type electrode pattern 306 and this n type semiconductor layer 303 of this second contact mat 308 electric contacts.So the light-emitting component 70 of the 4th specific embodiment is compared to the light-emitting component 30 of second specific embodiment, its light-emitting area can relatively increase, and further improves the luminous efficiency and the luminous intensity of light-emitting component 70.
Fig. 9 is the schematic diagram of looking squarely that of the 4th specific embodiment changes example, wherein said through hole 7070 is big or small along with strengthening gradually away from aforementioned second contact mat 712 along the footpath, hole of this N type electrode pattern 707 profiles trend, is beneficial to electric current and more is evenly distributed on this n type semiconductor layer 704.Similarly, the described through hole 5070 of the light-emitting component 50 of the 3rd specific embodiment, is beneficial to electric current and more is evenly distributed on this n type semiconductor layer 504 along with strengthening gradually away from aforementioned second contact mat 512 along the directly big I in the hole of this N type electrode pattern 507 profiles trend.
Figure 10 and Figure 11 are for the schematic perspective view of the 5th specific embodiment of the light-emitting component of tool improved electrode construction of the present invention and look squarely schematic diagram.In the 5th specific embodiment, the light-emitting component 80 of tool improved electrode construction of the present invention comprises a p type semiconductor layer 801, a n type semiconductor layer 803, a luminescent layer 802, a substrate 804, a P type electrode pattern 805 and a N type electrode pattern 806.This luminescent layer 802 is between this p type semiconductor layer 801 and this n type semiconductor layer 803, and this substrate 804 is positioned at this n type semiconductor layer 803 belows.This P type electrode pattern 805 is formed at this p type semiconductor layer 801 tops, and this P type electrode pattern 805 comprises distortion E type electrode pattern 805a and a L type branch electrodes 8051 and extends downwards and a distortion is inverted E type electrode pattern 805b and is extended downwards with the end of a L type branch electrodes 8052 from this distortion inversion E type electrode pattern 805b from the end of this E type electrode pattern 805a.This E type electrode pattern 805a and this distortion inversion E type electrode pattern 805b are enantiomorphic relationship each other and are electrically connected to each other.The part that this N type electrode pattern 806 is formed at this n type semiconductor layer 803 exposes to the open air on the area, and this N type electrode pattern 806 is matching relationship with this P type electrode pattern 805 so that this P type electrode pattern 805 each partly with these N type electrode pattern 806 corresponding parts between distance identical haply.A pair of first contact mat 807 is formed at this E type electrode pattern 805a and this distortion respectively and is inverted the some of E type electrode pattern 805b near these light-emitting component 80 peripheries, this to first contact mat, 807 usefulness so that this P type electrode pattern 805 and electric contact of external world's generation.A pair of second contact mat 808 is formed at the some of this N type electrode pattern 806 near these light-emitting component 80 peripheries respectively, this to second contact mat, 808 usefulness so that this N type electrode pattern 806 and electric contact of external world's generation.Should be good to heal far to first contact mat 807 and this position to second contact mat 808 from light-emitting zone.In other words, should be to first contact mat 807 and second contact mat, the 808 preferable counter electrode parts that are formed near this light-emitting component crystal grain edge, be beneficial to follow-up routing technology (wire bonding process), and then the bonding wire that prevents to be soldered to aforementioned first contact mat 807 and second contact mat 808 stops the emergent light of this light-emitting component crystal grain end face.Considering that this p type semiconductor layer 801 generally has under the situation of higher electric resistivity, the present invention can form current distribution layer (the current spreading layer) (not shown) of a printing opacity earlier above this p type semiconductor layer 801, and makes the electric current of this P type electrode pattern 805 can be distributed in this p type semiconductor layer 801 more equably by this current distribution layer.But the metal oxide layer of this current distribution layer titanium nitride (TiN) layer or a printing opacity, for example tin indium oxide (Indium Tin Oxides (ITO)) layer, chromium titanium oxide (Chromium TitaniumOxide, CTO), tin ash: antimony (SnO
2: Sb), gallic oxide: tin (Ga
2O
3: Sn), nickel oxide (NiO), indium oxide: zinc (In
2O
3: Zn), the silver oxide indium: tin (AgInO
2: Sn), cupric oxide aluminium (CuAlO
2), lanthanum copper oxygen sulphur (LaCuOS), cupric oxide gallium (CuGaO
2), strontium oxide strontia copper (SrCu
2O
2), manganese oxide (MnO), cupric oxide (CuO), tin oxide (SnO) or gallium nitride (GaN).
With regard to this light-emitting component 80, the relative position of this p type semiconductor layer 801 and this n type semiconductor layer 803 can exchange, and the conductivity of this P type electrode pattern 805 and this N type electrode pattern 806 is also exchanged thereupon.The shape of this P type electrode pattern 805 and this N type electrode pattern 806 is also interchangeable.
Figure 12 and Figure 13 are for the schematic perspective view of the 6th specific embodiment of the light-emitting component of tool improved electrode construction of the present invention and look squarely schematic diagram.In the 6th specific embodiment, the light-emitting component 90 of tool improved electrode construction of the present invention comprises one first insulating barrier 901, a p type semiconductor layer 902, a luminescent layer 903, a n type semiconductor layer 904, a substrate 905, a P type electrode pattern 906, a N type electrode pattern 907, one second insulating barrier 909 and a plurality of N type contact 910.This p type semiconductor layer 902 is formed at this first insulating barrier, 901 belows, and this luminescent layer 903 is formed at this p type semiconductor layer 902 belows, and this n type semiconductor layer 904 is formed at this luminescent layer 903 belows, and this substrate 905 is positioned at this n type semiconductor layer 904 belows.This P type electrode pattern 906 is formed in this first insulating barrier 901 and with this p type semiconductor layer 902 and electrically contacts, and this P type electrode pattern 906 comprises distortion E type electrode pattern 906a and a L type branch electrodes 9061 and extends downwards and a distortion is inverted E type electrode pattern 906b and is extended downwards with the end of a L type branch electrodes 9062 from this distortion inversion E type electrode pattern 906b from the end of this E type electrode pattern 906a.Aforementioned distortion E type electrode pattern 906a and L type branch electrodes 9061 are enantiomorphic relationship with aforementioned distortion inversion E type electrode pattern 906b and L type branch electrodes 9062 and are electrically connected to each other.This N type electrode pattern 907 is formed at these first insulating barrier, 901 tops and is matching relationship with this P type electrode pattern 906 so that this P type electrode pattern 906 each partly with these N type electrode pattern 907 corresponding parts between distance identical haply.This N type electrode pattern 907 has plurality of through holes 908 and is distributed in its below and extends downward this n type semiconductor layer 904 from this first insulating barrier 901 along its pattern form.The cross sectional shape of aforementioned through-hole 908 still can be Elliptical circle, square or rectangle except circle.This second insulating barrier 909 is formed at the internal perisporium of each this through hole 908, and it can be to be selected from following arbitrary dielectric material: silicon dioxide, glass (glass) and rotary coating glass (Spin on Glass).Described N type contact 910 is formed in the described through hole 908, to electrically connect this N type electrode pattern 907 and this n type semiconductor layer 904.In addition, this first insulating barrier 901 also can be formed at the internal perisporium of each this through hole 908 when being formed at these p type semiconductor layer 902 tops, and also promptly this second insulating barrier 909 is same one deck with this first insulating barrier 901.On the other hand, this first insulating barrier 901 and second insulating barrier 908 also can be air, in the case, this P type electrode pattern 906 directly is formed on this p type semiconductor layer 902, and this N type electrode pattern 907 electrically contacts with this n type semiconductor layer 904 by described N type contact 909, and wait this N type electrode pattern 907 by air as the insulation material and with these p type semiconductor layer 902 electrical isolation, described N type contacts 909 peripheries and also does electrical isolation by air.
This P type electrode pattern 906 comprises a pair of first contact mat 911 and connects aforementioned distortion E type electrode pattern 906a and L type branch electrodes 9061 and aforementioned distortion inversion E type electrode pattern 906b and L type branch electrodes 9062 respectively, and aforementioned first contact mat 911 is near the periphery of this first insulating barrier 901, so that this P type electrode pattern 906 and extraneous electric the contact to be provided.Should be that the high light reflectivity district is good more also with the distance light-emitting zone to the position of first contact mat 911.This N type electrode pattern 907 comprises the periphery of a pair of second contact mat 912 near this first insulating barrier 901, so that this N type electrode pattern 907 and extraneous electric the contact to be provided.Similarly, should be to first contact mat 911 and second contact mat, the 912 preferable counter electrode parts that are formed near this light-emitting component crystal grain edge, be beneficial to follow-up routing technology (wire bondingprocess), and then the bonding wire that prevents to be soldered to aforementioned first contact mat 911 and second contact mat 912 stops the emergent light of this light-emitting component crystal grain end face.Be same as aforementioned specific embodiment, can add a printing opacity current distribution layer (not shown) on this p type semiconductor layer 902, the printing opacity current distribution layer is electric contacts with this to make this P type electrode pattern 906, use the lateral distribution ability that promotes these P type electrode pattern 906 electric currents, and then promote the CURRENT DISTRIBUTION uniformity of this p type semiconductor layer 902.
In addition, described through hole 908 also can be beneficial to electric current and more be evenly distributed on this n type semiconductor layer 904 along with strengthening gradually away from aforementioned second contact mat 912 along footpath, the hole size of this N type electrode pattern 907 profiles trend.
Please refer to Figure 10 and Figure 12, the light-emitting component 90 of the 6th specific embodiment and the light-emitting component of the 5th specific embodiment 80 be different to be in this P type electrode pattern 906 of the light-emitting component 90 of the 6th specific embodiment and to be formed in this first insulating barrier 901, and this N type electrode pattern 907 is formed on this first insulating barrier, 901 tops, 901 pairs of this first insulating barriers should P type electrode pattern 906 part through being etched to this p type semiconductor layer 902, so that this this p type semiconductor layer 902 of P type electrode pattern 906 electric contacts.This first insulating barrier 901, this p type semiconductor layer 902 and this luminescent layer 903 only have the part to described through hole 908 that should N type electrode pattern 907 to be etched to remove to this n type semiconductor layer 904, and be formed in the described through hole 908 by aforementioned N type contact 910, to be electrically connected this N type electrode pattern 907 and this n type semiconductor layer 904.
Moreover, the present invention aforementioned third and fourth and the 6th specific embodiment also can have the routine (not shown) of following variation, promptly be distributed with the plurality of through holes except aforementioned N type electrode pattern below, to form outside the described N type contact, similarly Dui Ying P type electrode pattern can be formed at this first insulating barrier top, and plurality of through holes is distributed in this P type electrode pattern below and extends to aforementioned p type semiconductor layer, its internal perisporium is formed with insulating barrier, reach formation P type and be contacted with in the described through hole, electrically conduct to produce with this p type semiconductor layer.The described through hole cross sectional shape design of aforementioned P type electrode pattern correspondence can be the same with the corresponding described through hole of this N type electrode pattern.Thus, can further increase light-emitting component light-emitting area of the present invention.In addition, aforementioned each layer insulating of the present invention can be to be selected from following arbitrary dielectric material: silicon dioxide, glass (glass) and rotary coating glass (Spin on Glass).
On the other hand, the present invention can form a reflector structure below the substrate of aforementioned each light-emitting component.This reflector structure can be a metal level, for example aluminium, silver or aerdentalloy, can be the layered structure that a printing opacity dielectric layer and a metal level are formed, the layered structure of silicon dioxide layer/aluminum metal layer for example, and the thickness of this silicon dioxide layer can be from 2500 dust to 7500 dusts.The refraction coefficient of this printing opacity dielectric layer makes the emission light that penetrates aforementioned light-emitting component substrate produce total reflection at the interface of this substrate and this printing opacity dielectric layer, and is guided towards this light-emitting component surface emitting less than the refraction coefficient of this light-transparent substrate.This metal level as for this printing opacity dielectric layer below still can reflect back the part emission light that penetrates this printing opacity dielectric layer.Aforementioned reflector structure also can be the layered structure of printing opacity dielectric layer/Bragg reflector/metal level, wherein the refraction coefficient of this printing opacity dielectric layer is less than the refraction coefficient of this light-emitting component, and this metal level can be an aluminium, can form by plural layer printing opacity dielectric layer as for this Bragg reflector, described printing opacity dielectric layer refraction coefficient between any two is the height cyclic variation, and the thickness of each this printing opacity dielectric layer should be 1/4th (1/4 λ) of this light-emitting component emission wavelength.The layered structure of aforementioned printing opacity dielectric layer/Bragg reflector/metal level can be the layered structure of silicon dioxide/Bragg reflector/metal level, and wherein the thickness of silicon dioxide can be from 2500 dust to 7500 dusts.Below add the variation example of reflector with Figure 14 and Figure 15 A to Figure 15 C explanation light-emitting component of the present invention.
Please refer to Figure 14, the present invention forms a reflector 110 below this substrate 104 of aforementioned light-emitting component 10.The variation of this reflector 110 shown in Figure 15 A to Figure 15 C, can be the layered structure of a metal level 111, a printing opacity dielectric layer 112/ one metal level 111 or the layered structure of a printing opacity dielectric layer 112/ one Bragg reflector 113/ one metal level 111 for example.This Bragg reflector 113 is made up of a printing opacity dielectric layer 113a and the mutual storehouse of a printing opacity dielectric layer 113b.
The above is specific embodiments of the invention only, is not in order to limit claim of the present invention; All other do not break away from the equivalence of being finished under the disclosed spirit and changes or modification, all should be included in the claim.
Claims (47)
1. the light-emitting component of a tool improved electrode construction is characterized in that, this light-emitting component comprises:
One tool, the first conductive semiconductor layer;
One tool, the second conductive semiconductor layer;
One luminescent layer is between described tool first conductive semiconductor layer and the described tool second conductive semiconductor layer;
One substrate is positioned at described tool second conductive semiconductor layer below;
One tool, the first conductive electrode pattern is formed at described tool first conductive semiconductor layer top, and this tool first conductive electrode pattern comprises two electrode patterns first time that are mirror; And
One tool, the second conductive electrode pattern, the part that is formed at the described tool second conductive semiconductor layer exposes to the open air on the area, and this tool second conductive electrode pattern comprises two electrode patterns second time that are mirror;
Wherein, each of the described tool first conductive electrode pattern this of electrode pattern first time be from respect to a correspondence this second time electrode pattern some be close-shaped part extend to by this second time electrode pattern another partly surround and be and be closed shape partly.
2. the light-emitting component of tool improved electrode construction as claimed in claim 1 is characterized in that, described tool first conductive electrode pattern and the described tool second conductive electrode pattern are matching relationship.
3. the light-emitting component of tool improved electrode construction as claimed in claim 1 is characterized in that, the distance between each partly corresponding with described tool second conductive electrode pattern part of the described tool first conductive electrode pattern is equal substantially.
4. the light-emitting component of tool improved electrode construction as claimed in claim 1, it is characterized in that, described first time, electrode pattern had one first contact mat near described light-emitting component periphery, and described second time, electrode pattern had one second contact mat near this light-emitting component periphery.
5. the light-emitting component of tool improved electrode construction as claimed in claim 1, it is characterized in that, the described tool first conductive electrode pattern comprises a distortion S type electrode pattern and S type electrode pattern is inverted in a distortion, and wherein this S type electrode pattern and this inversion S type electrode pattern are enantiomorphic relationship and are electrically connected to each other.
6. the light-emitting component of tool improved electrode construction as claimed in claim 5, it is characterized in that the described tool first conductive electrode pattern comprises a pair of finger electrode and extends towards the described tool second conductive electrode pattern along the described tool first conductive semiconductor layer periphery from an end of described S type electrode pattern and described inversion S type electrode pattern respectively.
7. the light-emitting component of tool improved electrode construction as claimed in claim 1 is characterized in that, this light-emitting component also comprises a current distribution layer and is formed between described tool first conductive electrode pattern and the described tool first conductive semiconductor layer.
8. the light-emitting component of tool improved electrode construction as claimed in claim 1 is characterized in that, this light-emitting component also comprises the part that a plurality of aligned in position marks are formed at described substrate periphery to be exposed to the open air on the area.
9. the light-emitting component of tool improved electrode construction as claimed in claim 1, it is characterized in that the described tool first conductive electrode pattern comprises a pair of arcuation electrode that is electrically connected to each other and reaches by this inversion y-branch electrode to extending towards light-emitting area in the middle of the arcuation electrode.
10. the light-emitting component of tool improved electrode construction as claimed in claim 9 is characterized in that, two branches of the described inversion Y type electrode of the described tool first conductive electrode pattern have radian.
11. the light-emitting component of tool improved electrode construction as claimed in claim 1, it is characterized in that the described first conductive electrode pattern comprises distortion E type electrode pattern and a L type branch electrodes and extends and a distortion is inverted E type electrode pattern and is extended with the end of a L type branch electrodes from this distortion inversion E type electrode pattern from an end of this E type electrode pattern downwards downwards.
12. the light-emitting component of tool improved electrode construction as claimed in claim 1 is characterized in that, this light-emitting component also comprises a reflector and is formed at described substrate below.
13. the light-emitting component of tool improved electrode construction as claimed in claim 12 is characterized in that, described reflector comprises a metal level.
14. the light-emitting component of tool improved electrode construction as claimed in claim 13 is characterized in that, described metal level comprises aluminium, silver or aerdentalloy.
15. the light-emitting component of tool improved electrode construction as claimed in claim 12 is characterized in that, described reflector is a layered structure, comprises a printing opacity dielectric layer and a metal level, and described printing opacity dielectric layer is formed at described substrate below.
16. the light-emitting component of tool improved electrode construction as claimed in claim 15 is characterized in that, described reflector comprises a silicon dioxide layer and an aluminum metal layer.
17. the light-emitting component of tool improved electrode construction as claimed in claim 12 is characterized in that, described reflector is a layered structure, comprises a silicon dioxide layer, a Bragg reflector and a metal level.
18. the light-emitting component of a tool improved electrode construction is characterized in that, this light-emitting component comprises:
One tool, the first conductive semiconductor layer;
One luminescent layer is formed at described tool first conductive semiconductor layer below;
One tool, the second conductive semiconductor layer is formed at described luminescent layer below;
One substrate is positioned at described tool second conductive semiconductor layer below;
One tool, the first conductive electrode pattern, be formed at described tool first conductive semiconductor layer top and with its electrical contact, this tool first conductive electrode pattern comprises at least one electrode pattern for the first time;
One tool, the second conductive electrode pattern, be formed at described tool first conductive semiconductor layer top, the described tool second conductive electrode pattern comprises at least one electrode pattern for the second time, this tool second conductive electrode pattern has plurality of through holes and is distributed in its below and extends to the described tool second conductive semiconductor layer down, at least one described first time of the electrode pattern of the wherein said tool first conductive electrode pattern be from respect to one described second time electrode pattern some be close-shaped part extend to by this second time electrode pattern another partly surround and be and be closed the shape part; And
A plurality of tool second conductivity contacts are formed in the described through hole, and each this tool second conductivity contact only electrically connects described tool second conductive electrode pattern and the tool second conductive semiconductor layer.
19. the light-emitting component of tool improved electrode construction as claimed in claim 18 is characterized in that, described tool first conductive electrode pattern and the described tool second conductive electrode pattern are matching relationship.
20. the light-emitting component of tool improved electrode construction as claimed in claim 18, it is characterized in that, the described tool first conductive electrode pattern comprises be mirror two electrode patterns for the first time, and the described tool second conductive electrode pattern comprises two electrode patterns second time that are mirror.
21. the light-emitting component of tool improved electrode construction as claimed in claim 18 is characterized in that, the distance between each partly corresponding with described tool second conductive electrode pattern part of the described tool first conductive electrode pattern is equal substantially.
22. the light-emitting component of tool improved electrode construction as claimed in claim 18 is characterized in that, the described tool first conductive electrode pattern directly contacts the described tool first conductive semiconductor layer.
23. the light-emitting component of tool improved electrode construction as claimed in claim 18, it is characterized in that, the described first conductive electrode pattern comprises a distortion S type electrode pattern and S type electrode pattern is inverted in a distortion, and this S type electrode pattern and this inversion S type electrode pattern are enantiomorphic relationship and are electrically connected to each other.
24. the light-emitting component of tool improved electrode construction as claimed in claim 18, it is characterized in that, the described tool first conductive electrode pattern comprises at least one first contact mat and connects described first time of electrode pattern, and the described tool second conductive electrode pattern comprises at least one second contact mat and connects described second time of electrode pattern, and wherein said first contact mat and described second contact mat are near the periphery of described light-emitting component.
25. the light-emitting component of tool improved electrode construction as claimed in claim 24 is characterized in that, described through hole strengthens away from described second contact mat along with healing gradually along the via openings size of the described tool second conductive electrode pattern distribution.
26. the light-emitting component of tool improved electrode construction as claimed in claim 23, it is characterized in that the described tool first conductive electrode pattern comprises a pair of finger electrode and extends towards the described tool second conductive electrode pattern along the described tool first conductive semiconductor layer periphery from an end of described S type electrode pattern and described inversion S type electrode pattern respectively.
27. the light-emitting component of tool improved electrode construction as claimed in claim 18, it is characterized in that, this light-emitting component also comprises a current distribution layer and is formed between described tool first conductive electrode pattern and the described tool first conductive semiconductor layer, and this tool first conductive electrode pattern electrically contacts with described current distribution layer.
28. the light-emitting component of tool improved electrode construction as claimed in claim 18 is characterized in that, this light-emitting component also comprises the part that a plurality of aligned in position marks are formed at described substrate periphery to be exposed to the open air on the area.
29. the light-emitting component of tool improved electrode construction as claimed in claim 18, it is characterized in that the described tool first conductive electrode pattern comprises a pair of arcuation electrode that is electrically connected to each other and reaches by a described inversion y-branch electrode to extending towards light-emitting area in the middle of the arcuation electrode.
30. the light-emitting component of tool improved electrode construction as claimed in claim 29, it is characterized in that, the described tool first conductive electrode pattern comprises one first contact mat and is formed at describedly in the middle of the arcuation electrode, and the described tool second conductive electrode pattern comprises the symmetrical position that one second contact mat is positioned at the described tool second conductive electrode pattern.
31. the light-emitting component of tool improved electrode construction as claimed in claim 30 is characterized in that, described through hole strengthens away from described second contact mat along with healing gradually along the via openings size of the described tool second conductive electrode pattern distribution.
32. the light-emitting component of tool improved electrode construction as claimed in claim 29 is characterized in that, two branches of the described inversion Y type electrode of the described tool first conductive electrode pattern have radian.
33. the light-emitting component of tool improved electrode construction as claimed in claim 18, it is characterized in that the described tool first conductive electrode pattern comprises distortion E type electrode pattern and a L type branch electrodes and extends and a distortion is inverted E type electrode pattern and is extended with the end of a L type branch electrodes from described distortion inversion E type electrode pattern from an end of described E type electrode pattern downwards downwards.
34. the light-emitting component of tool improved electrode construction as claimed in claim 33, it is characterized in that, the described tool first conductive electrode pattern comprises at least one first contact mat and the described tool second conductive electrode pattern comprises at least one second contact mat, and wherein said first contact mat and second contact mat are near the periphery of described light-emitting component.
35. the light-emitting component of tool improved electrode construction as claimed in claim 34 is characterized in that, described through hole strengthens away from described second contact mat along with healing gradually along the via openings size of the described tool second conductive electrode pattern distribution.
36. the light-emitting component of tool improved electrode construction as claimed in claim 18, it is characterized in that, this light-emitting component also comprises an insulating barrier and is formed between described tool first conductive electrode pattern and the described tool first conductive semiconductor layer, and described tool first conductive electrode pattern below has a plurality of tool first conductivity contacts and runs through described insulating barrier until the described tool first conductive semiconductor layer.
37. the light-emitting component of tool improved electrode construction as claimed in claim 36 is characterized in that, described insulating barrier is selected from following arbitrary material: silicon dioxide, glass and rotary coating glass.
38. the light-emitting component of tool improved electrode construction as claimed in claim 18 is characterized in that, this light-emitting component also comprises a reflector and is formed at described substrate below.
39. the light-emitting component of tool improved electrode construction as claimed in claim 38 is characterized in that, described reflector comprises a metal level.
40. the light-emitting component of tool improved electrode construction as claimed in claim 39 is characterized in that, described metal level comprises aluminium, silver or aerdentalloy.
41. the light-emitting component of tool improved electrode construction as claimed in claim 38 is characterized in that, described reflector is a layered structure, comprises a printing opacity dielectric layer and a metal level, and this printing opacity dielectric layer is formed at described substrate below.
42. the light-emitting component of tool improved electrode construction as claimed in claim 41 is characterized in that, described reflector comprises a silicon dioxide layer and an aluminum metal layer.
43. the light-emitting component of tool improved electrode construction as claimed in claim 38 is characterized in that, described reflector is a layered structure, comprises a silicon dioxide layer, a Bragg reflector and a metal level.
44. the light-emitting component of tool improved electrode construction as claimed in claim 18 is characterized in that, the cross sectional shape of described through hole be selected from following any one: circular, Elliptical is circular, square and rectangle.
45. the light-emitting component of tool improved electrode construction as claimed in claim 36 is characterized in that, the described tool first conductivity contacting section shape be selected from following any one: circular, Elliptical is circular, square and rectangle.
46. the light-emitting component of tool improved electrode construction as claimed in claim 18, it is characterized in that this light-emitting component also comprises an insulating barrier and is formed at the internal perisporium that reaches each described through hole between described tool second conductive electrode pattern and the described tool first conductive semiconductor layer.
47. the light-emitting component of tool improved electrode construction as claimed in claim 46 is characterized in that, described insulating barrier is selected from following arbitrary material: air, silicon dioxide, glass and rotary coating glass.
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| CN102237352B (en) * | 2010-05-04 | 2013-05-22 | 旭丽电子(广州)有限公司 | Light-emitting diode module and light-emitting diode lamp |
| CN102142499A (en) * | 2011-01-27 | 2011-08-03 | 广东银雨芯片半导体有限公司 | LED (light emitting diode) wafer with evenly distributed current |
| CN102800779A (en) * | 2011-05-27 | 2012-11-28 | 广东银雨芯片半导体有限公司 | Light-emitting diode (LED) wafer for graphene electrode and manufacturing method for LED wafer |
| CN102263162A (en) * | 2011-06-23 | 2011-11-30 | 华中科技大学 | Preparation methods for avalanche photo diode in flip-chip bonded structure and array thereof |
| CN108470802A (en) * | 2018-03-30 | 2018-08-31 | 映瑞光电科技(上海)有限公司 | A kind of LED chip and preparation method thereof |
| CN110931612B (en) * | 2019-11-20 | 2021-06-22 | 华南师范大学 | Visible light communication light-emitting device with multi-ring square unit structure and preparation method thereof |
| CN112321298B (en) * | 2020-11-06 | 2022-03-11 | 中国科学院新疆理化技术研究所 | Perovskite-like thermistor material and preparation method thereof |
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