CN101332588A - Cup shaped grinding wheel for grinding back of the semiconductor chip and grinding method thereof - Google Patents
Cup shaped grinding wheel for grinding back of the semiconductor chip and grinding method thereof Download PDFInfo
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- CN101332588A CN101332588A CNA200710127945XA CN200710127945A CN101332588A CN 101332588 A CN101332588 A CN 101332588A CN A200710127945X A CNA200710127945X A CN A200710127945XA CN 200710127945 A CN200710127945 A CN 200710127945A CN 101332588 A CN101332588 A CN 101332588A
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- hard abrasive
- cup wheel
- wheel
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- 238000000227 grinding Methods 0.000 title claims abstract description 87
- 239000004065 semiconductor Substances 0.000 title claims abstract description 42
- 238000000034 method Methods 0.000 title claims abstract description 26
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims abstract description 38
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 238000003672 processing method Methods 0.000 abstract description 3
- 239000002245 particle Substances 0.000 abstract description 2
- 229910001651 emery Inorganic materials 0.000 description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 238000005299 abrasion Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 4
- 229910052582 BN Inorganic materials 0.000 description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000005011 phenolic resin Substances 0.000 description 3
- 229920001568 phenolic resin Polymers 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
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Abstract
The invention provides a cup-typed grinding wheel for coarse grinding of a back of a semiconductor wafer and a better grinding processing method for coarse grinding process by using the cup-typed grinding wheel; the cup-typed grinding wheel is characterized in that no complex fabrication process is required, grinding efficiency can be improved by improving sharpness, and grinding damage as an obstacle is prevented in the subsequent fine grinding. On the cup-typed grinding wheel (2) applied to the coarse grinding as a previous procedure of the fine grinding at the back of the grinding of the semiconductor wafer (W), superhard abrasive particles (4) are almost radially arranged on a circular side (31) of a disc-shaped pedestal (3) and a long edge (42) of a grinding acting surface (41) is almost radially arranged along the pedestal (3).
Description
Technical field
The present invention relates to cup wheel that uses in a kind of rough lapping of the back side at semiconductor chip and the Ginding process that utilizes this cup wheel.
Background technology
In the past, use a kind of cup wheel in the grinding back surface of semiconductor chips such as silicon chip, the superhard abrasive granulosa that is made of diamond or cubic crystal boron nitride (CBN) on this cup wheel forms ring-type on the round sides of pedestal.In the grinding back surface of semiconductor chip, to be that the semiconductor chip of the surface of the semiconductor chip about the 775 μ m film forming of having carried out regulation is cut to the roughly thickness of regulation by rough lapping from dorsal part at thickness, be processed as the thickness of regulation and level and smooth face by smooth grinding at last.Yet, in recent years, along with the slimming day by day of semiconductor chip, in the grinding back surface of semiconductor chip, the processing that the chipping allowance that most employings enlarge rough lapping is made slim wafer.Rough lapping is positioned at operation and smooth grinding inter processes thereafter such as the film formation process on semiconductor chip surface, if expend too much process time in rough lapping, then other operations can produce the stand-by period, and has influence on whole working (machining) efficiency.Yet if only increase grinding rate, semiconductor chip may take place that wafer burns or the wafer fracture under situation worst, and can't process.In this case, can increase the processing burden of smooth grinding.Therefore, wish in roughing, by improving the generation that sharpness reasonably improves grinding efficiency and can prevent to become the grinding damage of obstacle in the smooth grinding as the back operation.
Therefore, exploitation has various technology to improve the sharpness of the cup wheel that uses in the back side processing of conductor piece, for example, in patent documentation 1 described invention, on the superhard abrasive granulosa of ring-type, be formed with many grooves of multistage shape, thereby realize a kind of sharpness that can glibly cutting swarf be discharged cup wheel preferably.In patent documentation 2 described inventions, the part of above-mentioned groove is extended on the side face of pedestal.
Patent documentation 1: Japanese patent laid-open 11-179667 communique
Patent documentation 2: Japanese patent laid-open 11-245169 communique
Yet, in patent documentation 1 and patent documentation 2 described inventions, must discharge to the superhard abrasive granulosa processing of complicated shapes such as processing, in addition, owing to be as grinding object with the back side of semiconductor chip, therefore can not consider the technical peculiar property of rough lapping and smooth grinding especially, can not when using separately, take appropriate measures.
Summary of the invention
For solving the problems referred to above of conventional art, the objective of the invention is to, thereby providing a kind of need not especially complicated manufacturing processing, the backside semiconductor rough lapping by improving the grinding efficiency that generation that sharpness improves grinding efficiency and can prevent to become the grinding damage of obstacle in the smooth grinding as the back operation also improves smooth grinding is with cup wheel and utilize this type of rough lapping to carry out the better grinding processing method that rough lapping is processed with cup wheel.
For realizing above purpose, backside semiconductor of the present invention is ground and is used cup wheel, be used for the rough lapping as the preceding working procedure of smooth grinding of grinding at the back side of semiconductor chip, it is characterized in that, the super-hard abrasive piece is configured in with being general radial on the round sides of discoid pedestal and the long limit that makes the abrasive action face roughly along the radial arrangement of described pedestal.If adopt the present invention, utilization is configured in simple structure such on the pedestal with the super-hard abrasive piece with being general radial, can access a kind ofly to improve grinding efficiency and can prevent to become the crack of semiconductor chip of obstacle or the edge backside semiconductor rough lapping cup wheel of grindings damage generation such as burst apart in the smooth grinding as the back operation by improving sharpness.
In addition, the average grain diameter of the super-hard abrasive of super-hard abrasive piece is best suited in the scope of the super-hard abrasive of the rough lapping at the back side of semiconductor chip when #270～#800.
In addition, the long limit of the abrasive action face of super-hard abrasive piece pedestal radially ± scopes of 10 degree in when roughly radially disposing, be that the super-hard abrasive piece is along pedestal only scope radially.
In addition, the gap of adjacent super-hard abrasive interblock is during greater than the length of the minor face of the abrasive action face of super-hard abrasive piece, and it is obvious to make the super-hard abrasive piece be the effect that the general radial configuration produced, and cutting swarf is discharged well.
And, can make the shape of super-hard abrasive piece on the abrasive action face form roughly along pedestal radially and to direction of rotation protrude circular-arc.At this moment, can reduce the abrasion of emery wheel to prolong wheel life.In addition, can utilize with the circular-arc super-hard abrasive piece that will use in the past and make the super-hard abrasive piece being configured to the identical manufacture method of super-hard abrasive piece on the cup wheel that continuous substantially roughly ring-type forms on the pedestal side, according to different situations, also can utilize same specification manufacturing.
In addition, backside semiconductor Ginding process of the present invention is characterised in that, after utilizing a kind of cup wheel to carry out rough lapping processing, utilize another kind of cup wheel to carry out smooth grinding processing, this super-hard abrasive piece that is used for the cup wheel of rough lapping processing be configured on the round sides of discoid pedestal with being general radial and the long limit that makes the abrasive action face roughly along the radial arrangement of described pedestal, this super-hard abrasive piece that is used for the cup wheel that smooth grinding processes is roughly annularly with the long limit of abrasive action face roughly along the circumferential state configuration of the described pedestal round sides at discoid pedestal.If adopt the present invention, can increase the sharpness that makes described super-hard abrasive piece be the cup wheel of general radial configuration, thereby improve the efficient of rough lapping processing formerly, and make sharpness also obtain increasing in the smooth grinding processing that the cup wheel that the utilization thereafter makes the super-hard abrasive piece be roughly ring-type configuration carries out, thereby improve grinding efficiency.Thus, the grinding efficiency of attrition process integral body is improved, and make the abradant surface of semiconductor chip become level and smooth.
The invention provides and a kind ofly need not especially complicated manufacturing processing, by improving the generation that sharpness improves the grinding efficiency of rough lapping and can prevent to become the grinding damage of obstacle in the smooth grinding as the back operation, and can improve the cup wheel that the backside semiconductor rough lapping of the grinding efficiency of smooth grinding uses and utilize this type of rough lapping to carry out the better grinding processing method of rough lapping processing with cup wheel.
Description of drawings
Fig. 1 is the concept map of structure of the lapping device of expression embodiment of the present invention.
Fig. 2 is the vertical view of the rough lapping of embodiment of the present invention with cup wheel.
Fig. 3 is the cutaway view of the rough lapping of Fig. 2 with cup wheel.
Fig. 4 is Fig. 2,3 rough lapping partial side view with cup wheel.
Fig. 5 is the stereogram of the super-hard abrasive piece of embodiment of the present invention.
Fig. 6 is the vertical view of the smooth grinding of embodiment of the present invention with cup wheel.
Fig. 7 is the cutaway view of the smooth grinding of Fig. 6 with cup wheel.
Fig. 8 is Fig. 6,7 smooth grinding partial side view with cup wheel.
Fig. 9 is the processing measure of resistance result of the rough lapping of the embodiment of the invention and comparison other example.
Figure 10 is the processing measure of resistance result the when wafer after the embodiment of the invention and the rough lapping of comparison other example is further carried out smooth grinding.
(symbol description)
1 rough lapping device, 2 rough lapping cup wheels
3 pedestals, 4 super-hard abrasive pieces
5 smooth grinding devices, 6 smooth grinding cup wheels
7 pedestals, 8 super-hard abrasive pieces
11 rotating shafts, 12 folder platforms
13 rotating shafts, 51 rotating shafts
52 folder platforms, 53 rotating shafts
The specific embodiment
Below, the cup wheel that backside semiconductor rough lapping of the present invention is used and utilize this type of rough lapping to be elaborated with reference to the accompanying drawings with the better embodiment that cup wheel carries out the grinding method of rough lapping processing.Fig. 1 is the concept map of integral body of the lapping device of expression present embodiment.Rough lapping device 1 is made of with cup wheel 2 and folder platform 12 rough lapping, this rough lapping can and can be advanced and retreat around rotating shaft 11 rotation vertically with cup wheel 2, and this folder platform 12 can be around the axle center rotates and semiconductor chip W is fixed on the surface with the stagger rotating shaft 13 that disposes of rotating shaft 11.Smooth grinding device 5 similarly, constitute with cup wheel 6 and folder platform 52 by smooth grinding, this smooth grinding can and can be advanced and retreat around rotating shaft 51 rotation vertically with cup wheel 6, and this folder platform 52 can be around the axle center rotates and semiconductor chip W is fixed on the surface with the stagger rotating shaft 53 that disposes of rotating shaft 51.
The rough lapping of in the present embodiment tool feature with cup wheel 2 shown in Fig. 2～4.Fig. 2 is the vertical view when being equivalent to watch from the below cup wheel 2 of Fig. 1, and Fig. 3 is its III-III cutaway view.Cup wheel 2 is made of discoid pedestal 3 and the super-hard abrasive piece 4 that is installed on its circular side 31 with being general radial.The diameter of pedestal 3 is preferably in about 200～350mm.Fig. 4 is the side view of part of watching the side face of cup wheel 2 from the IV direction of Fig. 3.Super-hard abrasive piece 4 is inserted in the groove 32 on the side 31 that is formed on pedestal 3 and utilizes adhesive.At this, groove 32 radially runs through pedestal 3, and forms the big slightly hole with the roughly the same shape in bottom surface super-hard abrasive piece 4 of radial width on side 31, also can utilize adhesive that super-hard abrasive piece 4 is fixed in this hole.Super-hard abrasive piece 4 is positioned at the top face conduct and the abrasive action face 41 of the back side butt of semiconductor chip W in the drawings.
Fig. 5 (A) is the stereogram of super-hard abrasive piece 4.Super-hard abrasive piece 4 is rectangular shape, and the long limit 42 of abrasive action face 41 is roughly along the radial arrangement of pedestal 3.At this, preferably making long limit is about 5～50mm, and minor face is about 2～5mm, highly is about 3～10mm.The super-hard abrasive that super-hard abrasive piece 4 is preferably constituted diamond or cubic crystal boron nitride (CBN) utilizes the resin wheel of phenolic resins or polyimide resin be combined into or utilizes the vitrified bonded grinding wheel of vitreous bond material be combined into, yet so long as can make the superabrasive wheel of above-mentioned shape, even other kind is also harmless.The average grain diameter of super-hard abrasive is preferably in more than the #270, below the #800.If the average grain diameter of super-hard abrasive is less than #270, then abrasive particle is too coarse causes the concavo-convex change of backside semiconductor big, can't make it become enough level and smooth in the fine finishining as the back operation.In addition, if the average grain diameter of super-hard abrasive surpasses #800, then can't grind effectively as rough lapping.
Super-hard abrasive piece 4 is roughly along the radial arrangement of pedestal 3, if be configured in radially ± scopes of 10 degree in, then can give full play to the effect as radial configuration of present embodiment.In addition, in configuration to pedestal 3, gap by making 4 of adjacent super-hard abrasive pieces can be played the effect of each super-hard abrasive piece 4 radial configuration, and utilize enough gaps to improve the discharge ability of cutting swarf greater than the length of the minor face 43 of the abrasive action face of super-hard abrasive piece 4.
Among Fig. 5 (A), the emery wheel that super-hard abrasive piece 4 is rectangular shape is illustrated, yet, also can be shown in Fig. 5 (B), the edge is circular shape.At this moment, the circular-arc long limit 42 of abrasive action face 41 and Fig. 2 are in the same manner along the radial arrangement of pedestal 3.Also preferably make this moment super-hard abrasive piece 4 be configured in radially ± scopes of 10 degree in, and make the length of the gap of 4 of adjacent super-hard abrasive pieces greater than the minor face 43 of super-hard abrasive piece 4.In addition, the protruding side of circular arc is disposed towards the direction of rotation side.
Next, describe with cup wheel 6 according to the fine finishining of Fig. 6～8 pair fine finishining with lapping device 5.This fine finishining itself is the emery wheel of same type with the emery wheel that uses in the past with cup wheel 6.Fig. 6 is the vertical view when being equivalent to watch from the below cup wheel 6 of Fig. 1, and Fig. 7 is its VII-VII cutaway view.Cup wheel 6 is by discoid pedestal 7 and be the super-hard abrasive piece 8 that roughly along the circumferential direction is installed in annularly on its circular side 71 and constitute.The diameter of pedestal 7 is preferably in about 200～350mm.Fig. 8 is the side view of part of watching the side face of cup wheel 6 from the VIII direction of Fig. 7.Super-hard abrasive piece 8 is inserted into along ora terminalis and is formed in the groove 72 of the ring-type on the side 71 of pedestal 7, and has minimum gap between the adjacent super-hard abrasive piece 8, and utilizes adhesive.The shape of super-hard abrasive piece 8 is identical with the example of the super-hard abrasive piece 4 that the rough lapping shown in Fig. 5 (B) is used, the super-hard abrasive that the kind of emery wheel is also preferably constituted diamond or cubic crystal boron nitride (CBN) utilizes the resin wheel of phenolic resins or polyimide resin be combined into or utilizes the vitrified bonded grinding wheel of vitreous bond material be combined into, or is other emery wheel that can form.Just, the average grain diameter of super-hard abrasive is littler than what use in the rough lapping, preferably is suitable for below the above #4000 of accurately machined #400.The super-hard abrasive piece of this shape is being the general radial configuration during with cup wheel 2 as rough lapping, ring-type disposes be roughly as smooth grinding during with cup wheel 8 samely.
Next, the abrasive action to the lapping device of present embodiment describes.Relatively up fixing and with the back side on the folder platform 12 of rough lapping device 1 with the semiconductor chip W of fixing speed rotation, cup wheel 2 is sent on one side vertically with the fixing speed rotation on one side, thereby grind at the back side to semiconductor chip W, is machined to the roughly thickness of the desired value of the semiconductor chip thickness of approaching regulation.Next, the slight crack of the skin section that the cup wheel 6 of the smooth grinding device 5 of back operation is produced rough lapping processing on the back side of semiconductor chip W partly eliminates, and makes the back side become level and smooth.In rough lapping processing, utilize the cup wheel 2 that is general radial configuration of present embodiment, as described in following embodiment 1, be roughly the situation of the cup wheel of ring-type configuration with in the past use and compare, can significantly reduce the processing resistance, thereby realize sharpness attrition process preferably.Therefore, cup wheel 2 is increased to the feed rate (to the speed of semiconductor chip W incision) of axial advancement, thereby improve the efficient of attrition process.In addition, because processing the reducing of resistance, can prevent the grinding damage that edge that slight crack that the skin section at the back side of the semiconductor chip W that fragile material constitutes produces or edge portion take place bursts apart and caused, thereby improve the grinding efficiency of smooth grinding processing.In addition, because reducing of processing resistance, can correspondingly reduce the average grain diameter of the super-hard abrasive that uses in the rough lapping, at this moment, owing to improved the smoothness in the rough lapping and further prevented damage, therefore in smooth grinding processing, can further reduce grind to raise the efficiency and further to improve the flatness of polished surface.
In addition, when in smooth grinding device 5, using the cup wheel 6 of the roughly ring-type of type in the past, carried out with cup wheel 2 in the smooth grinding of the semiconductor chip W that grinds in the rough lapping of the present embodiment of utilizing general radial, compare with the situation that adopts the cup wheel of the roughly ring-type of type in the past to carry out rough lapping, as described in following embodiment 2, realize sharpness attrition process preferably thereby can reduce the processing resistance.Thus, rough lapping with cup wheel 2 on as super-hard abrasive piece 4 being the general radial configuration as described in the present embodiment, by using this rough lapping can improve the efficient and the quality of rough lapping, and can improve the efficient and the quality of smooth grinding processing with cup wheel 2.
In addition, in the cup wheel 2 of rough lapping processing usefulness, shown in Fig. 5 (B) circular-arc super-hard abrasive piece 4 is general radial when configuration projectedly to direction of rotation, the emery wheel that is the general radial configuration with the super-hard abrasive piece with rectangular-shaped of Fig. 5 (A) is roughly the same, can reduce to process resistance.Therefore, as described in following embodiment 3, the speed that can make emery wheel abrasion is the emery wheel minimizing of general radial configuration with respect in the past the emery wheel that is roughly ring-type configuration and with rectangular-shaped super-hard abrasive piece, thereby can prolong wheel life.In addition, used in the past, as also that adopt, on the cup-shaped emery wheel that is configured to continuous substantially roughly ring-type on the pedestal side circular-arc super-hard abrasive piece in the smooth grinding of present embodiment, can be by once proceeding to the operation that is sintered to ring-shaped continuous, cut apart then and make, but if the circular-arc super-hard abrasive piece 4 shown in Fig. 5 (B) can utilize identical therewith manufacture method to make the super-hard abrasive piece.In addition,, also can utilize same technology manufacturing, make manufacturing process and manufacturing equipment generalization according to different situations.
[embodiment 1]
Below, embodiment is described.
As the rough lapping of the super-hard abrasive piece 4 that uses the shape shown in Fig. 5 (A) embodiment, made with lower grinding wheel with cup wheel 2.
The diameter of pedestal 3: 300mm, the long limit of the abrasive action face of super-hard abrasive piece 4: about 19mm, minor face: 3mm, the quantity of super-hard abrasive piece 4: being radial configuration has 48, the kind of super-hard abrasive: skive, the average grain diameter of super-hard abrasive: #325, bond material: phenolic resins
Relative therewith, comparison other is identical with above-mentioned condition, is that to dispose 48 non-rectangular-shaped, width in the form of a ring be that 3mm, circular-arc long limit are the cup wheel of the circular-arc super-hard abrasive piece 48 about 19mm.
Above-mentioned 2 kinds of cup wheels under the condition of emery wheel rotary speed 2400rpm, feed rate 250 μ m/ branches, folder platform rotary speed 300rpm, are carried out the rough lapping of 12 inches silicon chips, try to achieve the processing resistance according to the canonical loading current value.Its result compares with the cup wheel of configuration in the form of a ring of comparison other as shown in Figure 9, adopts the cup wheel that is radial configuration of present embodiment can reduce to process resistance significantly.In addition, although the grinding streak that appears on the abradant surface of silicon chip is different because of condition, the situation with configuration in the form of a ring is different all the time, one of reason of the processing resistance when being considered the smooth grinding that can reduce as the back operation.
Among the embodiment 1, the silicon chip that the rough lapping of having carried out present embodiment silicon chip of processing and the rough lapping that compares object are processed has carried out smooth grinding processing.At this, the cup wheel 6 of smooth grinding processing unit (plant) 5 is the emery wheel of specification of the same race with the emery wheel as the comparison other among the embodiment 1, is #2000 owing to smooth grinding makes the average grain diameter of super-hard abrasive just.Grinding condition is: emery wheel rotary speed 2400rpm, feed rate 25 μ m/ branches, folder platform rotary speed 120rpm.The result as shown in figure 10, utilize the cup wheel that is radial configuration 2 of present embodiment to carry out the smooth grinding processing of the silicon chip of rough lapping, carry out the situation of smooth grinding processing of the silicon chip of rough lapping with the cup wheel of configuration in the form of a ring that utilizes comparison other and compare, can reduce to process resistance.
Utilize the condition identical with embodiment 1, the cup-shaped emery wheel 2 that the super-hard abrasive sheet 4 with the circular-arc shape shown in Fig. 5 (B) is radial configuration is processed the mensuration of resistance and emery wheel abrasion loss.Its result shows, on the contrary no matter make circular-arc to direction of rotation protrude or, the processing resistance all with embodiment 1 in the super-hard abrasive piece 4 with rectangular-shaped to be the emery wheel that general radial disposes roughly the same.Yet, carrying out about the emery wheel abrasion promptly wears away speed, with circular-arc super-hard abrasive piece 4 when direction of rotation is protruded configuration, with super-hard abrasive piece 4 among the embodiment 1 with rectangular-shaped be the emery wheel of general radial configuration and in the past the emery wheel of configuration in the form of a ring of type compare, prolong wheel life thereby can slow down abrasion speed.Especially when the radius of curvature 150mm of corresponding pedestal 3 makes the radius of curvature of circular-arc super-hard abrasive piece 4 be the 200mm left and right sides, the emery wheel abrasion loss is reduced by half.
Claims (6)
1, a kind of backside semiconductor is ground and is used cup wheel, be used for the rough lapping as the preceding working procedure of smooth grinding of the grinding of backside semiconductor, it is characterized in that, the super-hard abrasive piece is configured in with being general radial on the round sides of discoid pedestal and the long limit that makes the abrasive action face roughly along the radial arrangement of described pedestal.
2, backside semiconductor as claimed in claim 1 is ground and is used cup wheel, it is characterized in that the average grain diameter of the super-hard abrasive of described super-hard abrasive piece is in the scope of #270 to #800.
3, backside semiconductor as claimed in claim 1 or 2 is ground and use cup wheel, it is characterized in that, the described long limit of the described abrasive action face of described super-hard abrasive piece described pedestal radially ± roughly radially dispose in the scopes of 10 degree.
4, use cup wheel as each described backside semiconductor grinding in the claim 1 to 3, it is characterized in that the gap of adjacent described super-hard abrasive interblock is greater than the length of the minor face of the described abrasive action face of described super-hard abrasive piece.
5, grind as each described backside semiconductor in the claim 1 to 4 and use cup wheel, it is characterized in that, the shape of described super-hard abrasive piece on described abrasive action face forms roughly circular-arc radially and to the direction of rotation protrusion along described pedestal.
6, a kind of Ginding process of backside semiconductor, it is characterized in that, after utilizing a kind of cup wheel to carry out rough lapping processing, utilize another kind of cup wheel to carry out smooth grinding processing, this super-hard abrasive piece that is used for the cup wheel of rough lapping processing be configured on the round sides of discoid pedestal with being general radial and the long limit that makes the abrasive action face roughly along the radial arrangement of described pedestal, this super-hard abrasive piece that is used for the cup wheel that smooth grinding processes is roughly annularly with the long limit of abrasive action face roughly along the circumferential state configuration of the described pedestal round sides at discoid described pedestal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA200710127945XA CN101332588A (en) | 2007-06-27 | 2007-06-27 | Cup shaped grinding wheel for grinding back of the semiconductor chip and grinding method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA200710127945XA CN101332588A (en) | 2007-06-27 | 2007-06-27 | Cup shaped grinding wheel for grinding back of the semiconductor chip and grinding method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN101332588A true CN101332588A (en) | 2008-12-31 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA200710127945XA Pending CN101332588A (en) | 2007-06-27 | 2007-06-27 | Cup shaped grinding wheel for grinding back of the semiconductor chip and grinding method thereof |
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| CN (1) | CN101332588A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103229259A (en) * | 2011-07-22 | 2013-07-31 | 住友电气工业株式会社 | Powder magnetic core, method for manufacturing same, and coil component |
-
2007
- 2007-06-27 CN CNA200710127945XA patent/CN101332588A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103229259A (en) * | 2011-07-22 | 2013-07-31 | 住友电气工业株式会社 | Powder magnetic core, method for manufacturing same, and coil component |
| CN103229259B (en) * | 2011-07-22 | 2016-08-31 | 住友电气工业株式会社 | Dust core, the method manufacturing dust core and coil component |
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Open date: 20081231 |