CN101324733A - Electronic paper active substrate and manufacturing method thereof as well as electronic paper display screen - Google Patents
Electronic paper active substrate and manufacturing method thereof as well as electronic paper display screen Download PDFInfo
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- CN101324733A CN101324733A CN 200810117731 CN200810117731A CN101324733A CN 101324733 A CN101324733 A CN 101324733A CN 200810117731 CN200810117731 CN 200810117731 CN 200810117731 A CN200810117731 A CN 200810117731A CN 101324733 A CN101324733 A CN 101324733A
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Abstract
The invention relates to an electronic paper active baseplate, as well as a manufacturing method thereof and an electronic paper display screen. In the active baseplate, a light shield layer is arranged between the channel protective layer and the pixel electrode layer of each pixel unit; and the pixel electrode layer is connected with a drain electrode through the through holes on the light shield layer made of a black organic sensitive material. The manufacturing method comprises the following steps: after the channel protective layer is manufactured, the black organic sensitive material is coated to form the light shield layer; the exposure and etching process is adopted to form the through holes on the black organic sensitive material by means of etching; and the pixel electrode layer is distributed. The electronic paper display screen provided by the invention adopts the electric paper active baseplate. The electronic paper active baseplate can improve the contrast of the electric display screen and improve the display effect through the added light shield layer made of the black organic sensitive material. In addition, the black organic sensitive material can substitute for photoresist and is reserved after the through holes are formed through etching, thereby eliminating the step of removing the photoresist, simplifying the process and reducing the cost.
Description
Technical field
The present invention relates to a kind of Electronic Paper active base plate and manufacture method and electronic-paper display screen, relate in particular to a kind of Electronic Paper active base plate that adopts the active matrix electrophoretic display technology, the manufacture method of this active base plate and the electronic-paper display screen that adopts this active base plate to constitute.
Background technology
Electronic-paper display screen generally abbreviates Electronic Paper as, also can be called digital paper, is the product that the characteristics of plain paper display message combine with the characteristics of computer display.Existing printed matter mainly adopts paper to realize, along with increasing sharply of paper consumption figure, environment has been caused very big destruction.In this case, electronic-paper display screen arises at the historic moment, the thickness of electronic-paper display screen can be suitable with plain paper, can duplicate the display property of paper and can reuse, and electronic-paper display screen can show dynamic menu, thereby electronic-paper display screen is considered to be expected to replace in the near future existing paper document and shows means.
Study the more electronic-paper display screen that is based on electrophoretic techniques at present.Electrophoresis is meant that charged particle moves in the electric field that applies, electrophoresis showed belongs to a kind of bistable state and shows, particle in the electrophoresis liquid all has two steady state (SS)s, if there is not the external force effect, this stable state can not change, thereby maintenance display pattern that can be permanent, so electrophoresis showed has extremely low power consumption levels.
The research of electrophoretic electronic paper display screen just began as far back as the seventies, for solving problems such as its poor stability, life-span weak point, (the Massachusetts Institute ofTechnology of Massachusetts Institute Technology, abbreviation MIT) researcher handles by electrophoresis particle being carried out microencapsulation, solve the natural coagulation problems of particle, improved the stability of electrophoresis showed greatly.The microcapsules electric ink has successfully been realized industrialization by " E-INK " company at present.Some companies have released the e-book product based on the microcapsules electronic ink technologies." Sipix " company of the U.S. has then proposed another and has improved the means of electrophoresis solution stability, promptly little cup (micro-cup) technology.Little glass of technology injected electrophoresis liquid then by at first produce the grid of isolation on substrate in grid, intercept the cohesion of electrophoresis displaying particle by the dividing wall between the grid, so the stability and the life-span of having improved electrophoresis showed.
No matter microcapsules technology still is a little glass of technology, wants to realize the demonstration of text message, all needs to use the driven with active matrix technology.For example, thin film transistor (TFT) (Thin Film Transistor is hereinafter to be referred as TFT) technology is exactly realize active matrix a kind of.
The electrophoretic electronic paper display screen is generally formed box by active base plate and electrophoresis substrate.The electrophoresis substrate is provided with common electrode, also is coated with electrophoresis particle.Active base plate is responsible for input data signal and image is shown is controlled, and is made up of a plurality of pixel cells that matrix form is arranged, and each pixel cell is connected with sweep trace 3 with crisscross data line 2 respectively, and the structure of one of them pixel cell as shown in Figure 1.Wherein, each pixel cell mainly comprises pixel electrode area and TFT zone, and its longitudinal cross-section structure successively comprises as shown in Figure 2: first substrate 1 (not showing among Fig. 1); The gate electrode 4 that lay in TFT zone on first substrate 1, and the sweep trace 3 that links to each other with gate electrode 4; Cover the gate insulation layer 5 on TFT zone and the pixel electrode area; The active layer of laying on the TFT zone of gate insulation layer 5 13 is with two relative ohmic contact layers 9 that adopt composition technology to form on the active layer 13; Source electrode 8 and the drain electrode 10 laid relatively on ohmic contact layer 9 have promptly formed raceway groove between source electrode 8 and the drain electrode 10; After this laying channel protective layer 6 covers on pixel electrode area and the TFT zone; Form channel protective layer 6 backs and adopt photoetching process, above channel protective layer 6 corresponding drain electrodes 10, etch via hole 11; Then apply the transparent pixels electrode material in pixel electrode area and form pixel electrode layer 7, pixel electrode layer 7 links to each other with drain electrode 10 by via hole 11.
Above-mentioned is the structure of general Electronic Paper active base plate, when forming via hole, generally adopts photoetching process to finish.That is: at first on whole TFT zone and pixel electrode area, apply photoresist; Then under the covering of mask plate, expose, leave the figure of via hole on the mask plate; Photoresist on the via hole is removed in development step subsequently after exposing; Carry out etching afterwards, the channel protective layer at via hole place is etched away the formation via hole because of the protection that does not have photoresist; Subsequently photoresist is cleaned and remove, promptly finish the photoetching process of via hole.
But there is the lower defective of contrast in existing electrophoretic electronic paper display screen.Because electrophoresis particle is coated on the substrate of electrophoresis substrate, with the direct bonding formation display screen of active base plate, so color membrane filtration mating plate can't be set as LCD, can't adopt black matrix in the color film to block TFT zone on the active base plate, raceway groove in the TFT zone is subjected to seeing through the external environment rayed of electrophoresis particle layer easily, produce bigger leakage current, thereby produce the cross-talk that shows, influenced the contrast of electronic-paper display screen.And, on the existing active base plate,, approach same plane because the vertical range of pixel electrode layer and data line and sweep trace is very near, therefore produced coupling capacitance.Prior art tends to reduce the area of pixel electrode layer for reducing coupling capacitance, has then reduced the aperture opening ratio of pixel cell.So-called aperture opening ratio promptly shows the pixel electrode area and the whole pixel cell area ratio that comprises the TFT zone of non-demonstration usefulness of usefulness, and aperture opening ratio is little, will inevitably influence the contrast of electronic-paper display screen.
Summary of the invention
The purpose of this invention is to provide a kind of Electronic Paper active base plate and manufacture method and electronic-paper display screen,, improve display effect to improve the contrast of electronic-paper display screen.
For achieving the above object; the invention provides a kind of Electronic Paper active base plate; comprise first substrate; and be laid in a plurality of pixel cells on first substrate; wherein: between the channel protective layer of each pixel cell and pixel electrode layer, also be laid with light blocking layer; described pixel electrode layer links to each other with drain electrode by the via hole that is provided with on the described light blocking layer, and the material of described light blocking layer is a black organic photo material.
For achieving the above object, the present invention also provides a kind of manufacture method of Electronic Paper active base plate, comprising:
For achieving the above object, the present invention provides a kind of electronic-paper display screen that adopts Electronic Paper active base plate of the present invention again, wherein: also comprise and the electrophoresis substrate of described active base plate to box; Described electrophoresis substrate comprises second substrate, and the electrophoresis particle that applies on described second substrate.
By above technical scheme as can be known, the present invention has increased the light blocking layer that black organic photo material is made in active base plate, can block the channel region in TFT zone, the surround lighting that absorption sees through from the electrophoresis particle layer, avoid producing in the raceway groove dark current, thereby the elimination cross-talk, the contrast of raising electronic-paper display screen.On the other hand, because light blocking layer has certain thickness, thereby can increase the vertical range between pixel electrode and data line and the sweep trace, reduced coupling capacitance, can increase the area of pixel electrode layer, improve the aperture opening ratio of pixel cell, thereby improve the contrast of electronic-paper display screen.And, be in black organic photo material below the pixel electrode area and can absorb surround lighting through electrophoresis particle layer and pixel electrode layer, reduce reflection, further improve contrast, improve display effect.
Also in conjunction with the accompanying drawings the present invention is described in further detail below by specific embodiment.
Description of drawings
Fig. 1 is the plan structure synoptic diagram of a pixel cell in a kind of Electronic Paper active base plate of prior art;
Fig. 2 is the longitdinal cross-section diagram of a pixel cell in a kind of Electronic Paper active base plate of prior art;
Fig. 3 is the plan structure synoptic diagram of a pixel cell in Electronic Paper active base plate one specific embodiment of the present invention;
Fig. 4 is the longitdinal cross-section diagram of a pixel cell in Electronic Paper active base plate one specific embodiment of the present invention;
Fig. 5 is the plan structure synoptic diagram of a pixel cell in another specific embodiment of Electronic Paper active base plate of the present invention;
Fig. 6 is the longitdinal cross-section diagram of a pixel cell in another specific embodiment of Electronic Paper active base plate of the present invention;
Fig. 7 is the process flow diagram of the manufacture method specific embodiment of Electronic Paper active base plate of the present invention;
Fig. 8 is the structural representation of electronic-paper display screen specific embodiment of the present invention.
Among the figure:
The 1-first substrate 2-data line 3-sweep trace
4-gate electrode 5-gate insulation layer 6-channel protective layer
7-pixel electrode layer 8-source electrode 9-ohmic contact layer
10-drain electrode 11-via hole 12-light blocking layer
The 13-active layer 210-second substrate 220-electrophoresis particle
Embodiment
Electronic Paper active base plate embodiment
The active base plate of Electronic Paper active base plate specific embodiment, be called amorphous silicon (a-Si:H) tft array substrate again, form by a plurality of pixel cells that matrix form is arranged, each pixel cell is connected with the sweep trace 3 of embarking on journey with the data line 2 that becomes row respectively, Figure 3 shows that the plan structure synoptic diagram of one of them pixel cell.Wherein, each pixel cell mainly comprises pixel electrode area and TFT zone, pixel electrode area is the occupied zone of common pixel electrode 7 as shown in Figure 3, the TFT zone is the occupied zone of each functional layer of TFT, and TFT generally includes gate electrode 4, active layer 13, ohmic contact layer 9, source electrode 8 and drain electrode 10.The longitudinal cross-section structure of this pixel cell successively comprises as shown in Figure 4: first substrate 1 (not showing among Fig. 3); The gate electrode 4 that lay in TFT zone on first substrate 1, and the sweep trace 3 that links to each other with gate electrode 4; Cover the gate insulation layer 5 on TFT zone and the pixel electrode area; The active layer of on the TFT zone of gate insulation layer 5, laying 13, general amorphous silicon (a-Si:H) material that adopts prepares, two relative ohmic contact layers 9 that on active layer 13, adopt composition technology to form, corresponding with the material of active layer 13, for example, when adopting amorphous silicon (a-Si:H) preparation active layer 13, then can adopt N+a-Si to prepare ohmic contact layer 9; Source electrode 8 and the drain electrode 10 laid relatively on ohmic contact layer 9 have promptly formed raceway groove between source electrode 8 and the drain electrode 10; After this lay channel protective layer 6, channel protective layer 6 is generally made by insulating material, for example adopts the plasma-reinforced chemical vapor deposition silicon nitride (SiNx) of (being called for short PECVD), also can select the photonasty organic material for use; Also be laid with light blocking layer 12 on channel protective layer 6, the material of light blocking layer 12 is a black organic photo material; After forming channel protective layer 6 and light blocking layer 12, adopt photoetching process, above channel protective layer 6 and light blocking layer 12 corresponding drain electrodes 10, etch via hole 11; Then apply transparent conductive material and form pixel electrode layer 7 in pixel electrode area; indium tin oxide (Indium Tin Oxides for example; be called for short ITO) or zinc paste (ZnO); pixel electrode layer 7 links to each other with drain electrode 10 by via hole 11, and light blocking layer 12 is formed between channel protective layer 6 and the pixel electrode layer 7.
Light blocking layer in the present embodiment adopts black organic photo material, be specifically as follows the organic photo material that is mixed with the black light-absorbing particle, for example, can adopt carbon black or titanium dioxide material, adopt acrylic acid, epoxy resin or polyimide etc. as the organic photo material as the black light-absorbing particle.The optical concentration scope of black organic photo material is preferably between 1～5, and above-mentioned optical concentration refers to that promptly the logarithm of above-mentioned material light transmission rate gets negative.In addition, the thickness of light blocking layer is preferably greater than 1 micron, and preferable span is between 1～4 micron (μ m), and about about 2 microns is preferred value.
TFT zone in the present embodiment is made up of gate electrode, active layer, ohmic contact layer, source electrode and drain electrode, is general bottom gate channel-etch type TFT transistor.The design of light blocking layer in the present embodiment goes for using in the TFT thin film transistor (TFT) active base plate that various materials such as amorphous silicon (a-Si:H), zinc paste (ZnO) or organic semiconducting materials make.
In the technical scheme of present embodiment, the light blocking layer that black organic photo material is made can play the effect of black matrix, be used to block the channel region in TFT zone, absorption avoids producing the dark current in the raceway groove from the surround lighting that the electrophoresis particle layer sees through, thereby when making TFT in off position, avoid charging to non-gating pixel cell, make the pixel displaying contents remain on stable status, promptly eliminate cross-talk, thereby can improve the contrast of electronic-paper display screen.On the other hand, because light blocking layer has certain thickness, thereby be laid in light blocking layer on pixel electrode area and each bar sweep trace, the data line and increased vertical range between pixel electrode and data line and the sweep trace, promptly reduced coupling capacitance, thereby can reduce restriction to the pixel electrode layer area, increase the area of pixel electrode layer, can improve the aperture opening ratio of pixel cell, and then can improve the contrast of electronic-paper display screen.And, be in black organic photo material below the pixel electrode area and can absorb surround lighting through electrophoresis particle layer and pixel electrode layer, reduce reflection, thereby reach the purpose that improves contrast.
In further another specific embodiment of the present invention, can be provided with that pixel electrode layer 7 covers common pixel electrode area and to the TFT zone of small part, as shown in Figure 5 and Figure 6, make aperture opening ratio reach maximum, farthest improve the contrast of electronic-paper display screen.
The preparation method embodiment of Electronic Paper active base plate
Light blocking layer in the Electronic Paper active base plate of the present invention promptly can as one independently functional layer go to lay, also can when forming via hole, utilize photoetching process to prepare.Be illustrated in figure 7 as the process flow diagram of preparation method's specific embodiment of Electronic Paper active base plate of the present invention, the active base plate of formation as Fig. 3,4 or Fig. 5,6 shown in.This method comprises the steps:
In above-mentioned steps 3, each functional layer of TFT can adopt the above-mentioned composition technology that is similar to gate electrode 4 successively to prepare, and needs through 1 time or 2 photoetching processes usually.During each photoetching, apply one or more layers material requested earlier, then use corresponding mask board to explosure etching, to form required pattern.
Present embodiment specifically can replace photoresist to carry out exposure imaging black organic photo material, after etching forms via hole, unlike prior art is removed photoresist, remove black organic photo material, and directly remaining black organic photo material is kept as light blocking layer.Technique scheme can be simplified production process, reduces cost, on the basis that does not increase manufacture difficulty, by increasing the contrast that light blocking layer has significantly improved electronic-paper display screen.
Electronic-paper display screen embodiment
Be illustrated in figure 8 as the structural representation of electronic-paper display screen specific embodiment of the present invention.The active base plate of this electronic-paper display screen can adopt the technical scheme of the arbitrary embodiment of Electronic Paper active base plate of the present invention, and this electronic-paper display screen also comprises and the electrophoresis substrate of this active base plate to box; This electrophoresis substrate specifically comprises second substrate 210, and the electrophoresis particle 220 that applies on second substrate 210.
The electronic-paper display screen of present embodiment can significantly improve contrast because of having set up the light blocking layer structure in the active base plate, improves display effect.
It should be noted that at last: above embodiment only in order to technical scheme of the present invention to be described, is not intended to limit; Although with reference to previous embodiment the present invention is had been described in detail, those of ordinary skill in the art is to be understood that: it still can be made amendment to the technical scheme that aforementioned each embodiment put down in writing, and perhaps part technical characterictic wherein is equal to replacement; And these modifications or replacement do not make the essence of appropriate technical solution break away from the spirit and scope of various embodiments of the present invention technical scheme.
Claims (16)
1, a kind of Electronic Paper active base plate; comprise first substrate; and be laid in a plurality of pixel cells on first substrate; it is characterized in that: between the channel protective layer of each pixel cell and pixel electrode layer, also be laid with light blocking layer; described pixel electrode layer links to each other with drain electrode by the via hole that is provided with on the described light blocking layer, and the material of described light blocking layer is a black organic photo material.
2, Electronic Paper active base plate according to claim 1 is characterized in that: the thickness range of described light blocking layer is 1～4 micron.
3, Electronic Paper active base plate according to claim 1 is characterized in that: the optical concentration scope of described light blocking layer is 1～5.
4, Electronic Paper active base plate according to claim 1 is characterized in that: described pixel electrode layer covers the pixel electrode area of each pixel cell and to the small part TFT regions.
5, Electronic Paper active base plate according to claim 1 is characterized in that: described black organic photo material is the organic photo material that is mixed with the black light-absorbing particle.
6, Electronic Paper active base plate according to claim 5 is characterized in that: the material of described black light-absorbing particle is carbon black or titanium dioxide.
7, according to claim 5 or 6 described Electronic Paper active base plates, it is characterized in that: described organic photo material is acrylic acid, epoxy resin or polyimide.
8, a kind of manufacture method of Electronic Paper active base plate is characterized in that comprising:
Step 1, the laying sweep trace of on first substrate, embarking on journey, and lay the gate electrode of each pixel cell, each gate electrode is connected with corresponding scanning line respectively;
Step 2, on described first substrate of completing steps 1, lay gate insulation layer;
Step 3, on described first substrate of completing steps 2, form thin film transistor (TFT) in the TFT regions place of each pixel cell;
Step 4, on described first substrate of completing steps 3, lay channel protective layer;
Step 5, on the described channel protective layer of described first substrate of completing steps 4, apply black organic photo material and form light blocking layer;
Step 6, on described first substrate of completing steps 5, adopt the exposure etching technics on the light blocking layer of described black organic photo material, the drain electrode place etching of corresponding thin film transistor (TFT) forms via hole;
Step 7, lay pixel electrode layer on described first substrate of completing steps 6, described pixel electrode layer is connected with described drain electrode by described via hole.
9, the manufacture method of Electronic Paper active base plate according to claim 8 is characterized in that: after forming light blocking layer, also comprise: described light blocking layer is heat-treated to solidify.
10, the manufacture method of Electronic Paper active base plate according to claim 8 is characterized in that: lay pixel electrode layer in the described step 7 and be specially:
Described pixel electrode layer laid cover the pixel electrode area of each pixel cell and to the described TFT regions of small part.
11, the manufacture method of Electronic Paper active base plate according to claim 8 is characterized in that: apply black organic photo material formation light blocking layer in the described step 5 and be specially on described channel protective layer:
The black organic photo material that applies 1～4 micron thickness on described channel protective layer forms light blocking layer.
12, the manufacture method of Electronic Paper active base plate according to claim 8 is characterized in that: apply black organic photo material formation light blocking layer in the described step 5 and be specially on described channel protective layer:
The black organic photo material that applies 1～5 optical concentration on described channel protective layer forms light blocking layer.
13, the manufacture method of Electronic Paper active base plate according to claim 8 is characterized in that: described black organic photo material is the organic photo material that is mixed with the black light-absorbing particle.
14, the manufacture method of Electronic Paper active base plate according to claim 13 is characterized in that: the material of described black light-absorbing particle is carbon black or titanium dioxide.
15, according to the manufacture method of claim 13 or 14 described Electronic Paper active base plates, it is characterized in that: described organic photo material is acrylic acid, epoxy resin or polyimide.
16, a kind of electronic-paper display screen that adopts the described arbitrary Electronic Paper active base plate of claim 1～7 is characterized in that: also comprise and the electrophoresis substrate of described active base plate to box; Described electrophoresis substrate comprises second substrate, and the electrophoresis particle that applies on described second substrate.
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| Application Number | Priority Date | Filing Date | Title |
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| CN 200810117731 CN101324733B (en) | 2008-08-04 | 2008-08-04 | Electronic paper active substrate and manufacturing method thereof as well as electronic paper display screen |
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| CN 200810117731 CN101324733B (en) | 2008-08-04 | 2008-08-04 | Electronic paper active substrate and manufacturing method thereof as well as electronic paper display screen |
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Cited By (12)
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| CN102005389A (en) * | 2010-10-15 | 2011-04-06 | 信利半导体有限公司 | Method for reducing leakage rate of back channel etch type TFT |
| CN102437173A (en) * | 2011-11-11 | 2012-05-02 | 上海中科高等研究院 | Organic thin film transistor (TFT) array base plate, method for manufacturing same, and electronic paper display device |
| CN102540534A (en) * | 2010-12-13 | 2012-07-04 | 京东方科技集团股份有限公司 | Electronic paper display substrate, manufacturing method thereof and electronic paper display |
| CN103367454A (en) * | 2012-03-31 | 2013-10-23 | 联胜（中国）科技有限公司 | Thin film transistor, manufacturing method thereof, and active matrix display panel |
| CN104752489A (en) * | 2015-04-10 | 2015-07-01 | 深圳市华星光电技术有限公司 | Array baseplate, display device and method used for manufacturing array baseplate |
| CN109765739A (en) * | 2017-11-01 | 2019-05-17 | 株式会社日本显示器 | Substrate and electrophoretic apparatus |
| CN109817642A (en) * | 2019-01-22 | 2019-05-28 | 深圳市华星光电技术有限公司 | Thin-film transistor array base-plate and its manufacturing method |
| CN111048559A (en) * | 2019-11-25 | 2020-04-21 | 信利（惠州）智能显示有限公司 | Display screen, cover plate and manufacturing method of cover plate |
| CN111243477A (en) * | 2018-11-28 | 2020-06-05 | 江西兴泰科技有限公司 | Electronic paper driving substrate |
| CN111951732A (en) * | 2020-08-21 | 2020-11-17 | 京东方科技集团股份有限公司 | Pixel circuit, display panel and display device |
| WO2024021117A1 (en) * | 2022-07-29 | 2024-02-01 | 京东方科技集团股份有限公司 | Array substrate, display panel, display device, and tiled display device |
| WO2024077748A1 (en) * | 2022-10-09 | 2024-04-18 | 汉朔科技股份有限公司 | Electronic paper panel having unfilled corner on display area |
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- 2008-08-04 CN CN 200810117731 patent/CN101324733B/en active Active
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102005389A (en) * | 2010-10-15 | 2011-04-06 | 信利半导体有限公司 | Method for reducing leakage rate of back channel etch type TFT |
| CN102540534A (en) * | 2010-12-13 | 2012-07-04 | 京东方科技集团股份有限公司 | Electronic paper display substrate, manufacturing method thereof and electronic paper display |
| US8861070B2 (en) | 2010-12-13 | 2014-10-14 | Boe Technology Group Co., Ltd. | Electronic paper display substrate and the manufacturing method thereof |
| CN102540534B (en) * | 2010-12-13 | 2015-05-13 | 京东方科技集团股份有限公司 | Electronic paper display substrate, manufacturing method thereof and electronic paper display |
| CN102437173A (en) * | 2011-11-11 | 2012-05-02 | 上海中科高等研究院 | Organic thin film transistor (TFT) array base plate, method for manufacturing same, and electronic paper display device |
| CN103367454A (en) * | 2012-03-31 | 2013-10-23 | 联胜（中国）科技有限公司 | Thin film transistor, manufacturing method thereof, and active matrix display panel |
| CN104752489A (en) * | 2015-04-10 | 2015-07-01 | 深圳市华星光电技术有限公司 | Array baseplate, display device and method used for manufacturing array baseplate |
| WO2016161691A1 (en) * | 2015-04-10 | 2016-10-13 | 深圳市华星光电技术有限公司 | Array substrate, display apparatus, and method for preparing array substrate |
| US9887255B2 (en) | 2015-04-10 | 2018-02-06 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Array substrate, display device, and method for manufacturing array substrate |
| CN109765739B (en) * | 2017-11-01 | 2022-04-15 | 株式会社日本显示器 | Substrate and electrophoresis apparatus |
| CN109765739A (en) * | 2017-11-01 | 2019-05-17 | 株式会社日本显示器 | Substrate and electrophoretic apparatus |
| CN111243477A (en) * | 2018-11-28 | 2020-06-05 | 江西兴泰科技有限公司 | Electronic paper driving substrate |
| CN111243477B (en) * | 2018-11-28 | 2023-10-24 | 江西兴泰科技股份有限公司 | Electronic paper driving substrate |
| CN109817642A (en) * | 2019-01-22 | 2019-05-28 | 深圳市华星光电技术有限公司 | Thin-film transistor array base-plate and its manufacturing method |
| CN111048559A (en) * | 2019-11-25 | 2020-04-21 | 信利（惠州）智能显示有限公司 | Display screen, cover plate and manufacturing method of cover plate |
| CN111048559B (en) * | 2019-11-25 | 2022-11-22 | 信利（惠州）智能显示有限公司 | Display screen, cover plate and manufacturing method of cover plate |
| CN111951732A (en) * | 2020-08-21 | 2020-11-17 | 京东方科技集团股份有限公司 | Pixel circuit, display panel and display device |
| CN111951732B (en) * | 2020-08-21 | 2021-12-17 | 京东方科技集团股份有限公司 | Pixel circuit, display panel and display device |
| WO2024021117A1 (en) * | 2022-07-29 | 2024-02-01 | 京东方科技集团股份有限公司 | Array substrate, display panel, display device, and tiled display device |
| WO2024077748A1 (en) * | 2022-10-09 | 2024-04-18 | 汉朔科技股份有限公司 | Electronic paper panel having unfilled corner on display area |
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