CN101323449A - Method and apparatus for enhancing polysilicon production - Google Patents
Method and apparatus for enhancing polysilicon production Download PDFInfo
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- CN101323449A CN101323449A CNA2008100402413A CN200810040241A CN101323449A CN 101323449 A CN101323449 A CN 101323449A CN A2008100402413 A CNA2008100402413 A CN A2008100402413A CN 200810040241 A CN200810040241 A CN 200810040241A CN 101323449 A CN101323449 A CN 101323449A
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Abstract
The invention provides a production method of polysilicon, and a device; a silicon core is heated by using electricity in a reduction furnace to lead SiHCl3 to be reduced in the atmosphere of H2; the obtained silicon is deposited on the surface of the silicon core so as to produce the polysilicon; the invention adopts a method for enlarging the surface area of the silicon core to improve the production speed of the polysilicon. The invention also provides a reduction furnace for producing the polysilicon according to the production method of the polysilicon, which comprises a furnace cover, a bottom plate, a feed inlet, a discharge hole and the silicon core; the reduction furnace is sealed, the feed inlet, the discharge hole and a electrode are arranged on the bottom plate, the silicon core is connected on the electrode, wherein, the silicon core is sheet-shaped. In the production method and the device of the invention, a round silicon rod of the prior art is improved to be the silicon core which is sheet-shaped or tube-shaped or any irregular lamellar, thus increasing the surface area of the silicon core; as the deposition rate of the silicon mainly depends on the surface area of the silicon rod under the condition that the concentration of the reactive material is constant, the invention improves the deposition rate of the silicon largely, saves the production time and improves the production efficiency.
Description
Technical field
The present invention relates to a kind of production method and device of silicon, more specifically to a kind of method and device that improves production of polysilicon.
Background technology
The production method of polysilicon generally adopts siemens's improved technology at present, quartz sand smelted in electric arc furnace purify to 98% and generate industrial silicon, with the industrial silicon pulverizing and in a fluidized-bed reactor, reacting with it with anhydrous HCl under the condition about 300 ℃, generate diffluent SiHCl again
3, form gaseous mixture (H simultaneously
2, HCl, SiHCl
3, SiCl
4, Si).Above-mentioned gaseous mixture is then further purified, decomposed, purify the SiHCl after purifying
3Adopt high temperature reduction technology, with high-purity SiHCl
3At H
2Reduce deposition in the atmosphere and generate polysilicon.
Above-mentioned chemical vapor deposition processes carries out in reduction furnace, this reaction vessel seals, discharge port and opening for feed and some counter electrode are installed on the chassis, the silicon rod that connects 5～10 millimeters of diameters, 1.5～2 meters of length on the electrode, two silicon rods on every counter electrode interconnect (see figure 1) at the other end by short silicon rod again.When applying the high pressure of 12kV on the counter electrode, the breakdown conduction of silicon rod also is heated to 1050～1100 ℃ and reacts, and through hydrogen reduction, silicon deposits on the surface of silicon rod, and the diameter of silicon rod is increased gradually, finally reaches 150～200 millimeter.Generally, produce above-mentioned diameter and be 150～200 millimeters high purity silicon rods, the required reaction times is approximately 200～300 hours.Therefore, seek a kind of sedimentation velocity that can improve silicon in the above-mentioned production technique, reduce the method in reaction times, become a new direction in the field of polysilicon production.
Summary of the invention
Technical problem to be solved by this invention provides a kind of production method and device thereof of polysilicon, to improve the sedimentation velocity of silicon, shortens the reaction times.
In order to achieve the above object, the technical solution adopted in the present invention is as follows:
In reduction furnace,, make SiHCl with electrically heated silicon core
3At H
2Reduce in the atmosphere, the silicon of gained deposits on the surface of silicon core and generates polysilicon, because it is relevant with the surface-area of silicon core to generate the speed of polysilicon, so the present invention adopts the long-pending method of increase silicon wicking surface to improve the speed of producing polysilicon.
Production method according to above-mentioned polysilicon, the invention provides a kind of reduction furnace of producing polysilicon, comprise bonnet 1, chassis 2, feed-pipe 3, discharge nozzle 4, electrode 5 and silicon core 6, this reduction furnace is airtight, feed-pipe, discharge nozzle and electrode are installed on the chassis, the silicon core is connected on the electrode, and the surface-area of described silicon core is greater than the surface-area of right cylinder silicon rod.
In the production method of the present invention, described silicon core can be sheet.
The cross section of above-mentioned sheet silicon core can for flat-section (see Fig. 2 a), camber line shape (seeing Fig. 2 b, Fig. 2 c), I-shaped (seeing Fig. 2 d), zig-zag (Fig. 2 e) or other can increase the long-pending sheet (seeing Fig. 2 f, Fig. 2 g, Fig. 2 h, Fig. 2 i) of silicon wicking surface.
In the production method of the present invention, described silicon core can be tubulose.
The annular of the cross section of above-mentioned tubular silicon core for sealing or not sealing, described annular is annular (seeing Fig. 2 j, Fig. 2 k), ring-type rectangle (seeing Fig. 2 l, Fig. 2 m) or any irregular shape (seeing Fig. 2 n).
In the production method of the present invention, described silicon core can also be any erose thin layer.
In the production method of the present invention, the thickness of described silicon core is uniform or uneven.
The production method of the above-mentioned polysilicon of the present invention and device compared with prior art, have obvious improvement.
In production method of the present invention and device, circular silicon rod of the prior art is improved to flaky silicon core, increased the surface-area of silicon core.Bar-shaped silicon core for example, its cross-sectional diameter is 10mm, and length is 1.5 meters, and then surface-area is 2 π RL=47100mm
2And the silicon of equal volume, if be made into thickness when being the identical pancake thin slice of 1mm, length, its width is 78.5mm, surface-area is (1mm+78.5mm) * 2 * 1.5m=238500mm
2This shows that in the above two kinds of cases, the silicon materials that volume is identical are made into sheet silicon core, its surface area ratio bar-like silicon core has increased more than 500 times.
Because under the situation that the concentration of reaction raw materials remains unchanged, the sedimentation velocity of silicon depends primarily on the surface-area of silicon rod, so the present invention increased substantially the sedimentation velocity of silicon, saved the production time, improved production efficiency.
Description of drawings
Fig. 1: reduction furnace body of heater sectional view in the prior art.
Fig. 2: the shape of cross section synoptic diagram of silicon core in the reduction furnace of the present invention.
Embodiment
Further specify the production method and the device thereof of polysilicon of the present invention below in conjunction with specific embodiment.
1) make the silicon core: the silicon core is made into thin slice, and its cross section is that flat-section (is seen Fig. 2 a).
2) the silicon core is connected on the electrode of reduction furnace base plate, punctures the silicon core with the energising of the voltage counter electrode of 12kV and make the energising of silicon core be heated to 1100 ℃, feed the SiHCl of purifying by opening for feed
3Gas and H
2Gas, SiHCl
3By H
2Reduction, resulting silicon deposit on the surface of sheet silicon core and generate polysilicon.
1) make the silicon core: the silicon core is made into thin slice, and its cross section is circular arc (seeing Fig. 2 b).
2) the silicon core is connected on the electrode of reduction furnace base plate, punctures the silicon core with the energising of the voltage counter electrode of 12kV and make the energising of silicon core be heated to 1100 ℃, feed the SiHCl of purifying by opening for feed
3Gas and H
2Gas, SiHCl
3By H
2Reduction, resulting silicon deposit on the surface of sheet silicon core and generate polysilicon.
1) make the silicon core: the silicon core is made into tubulose, and its cross section is the annular (seeing Fig. 2 j) of sealing.
2) the silicon core is connected on the electrode of reduction furnace base plate, punctures the silicon core with the energising of the voltage counter electrode of 12kV and make the energising of silicon core be heated to 1100 ℃, feed the SiHCl of purifying by opening for feed
3Gas and H
2Gas, SiHCl
3By H
2Reduction, resulting silicon deposition and generate polysilicon on the surface of tubular silicon core and internal surface.
1) makes the silicon core: the silicon core is made into the sheet (see Fig. 2 f) of cross section for " king " font.
2) the silicon core is connected on the electrode of reduction furnace base plate, punctures the silicon core with the energising of the voltage counter electrode of 12kV and make the energising of silicon core be heated to 1100 ℃, feed the SiHCl of purifying by opening for feed
3Gas and H
2Gas, SiHCl
3By H
2Reduction, resulting silicon deposit on the surface of " king " font sheet silicon core and generate polysilicon.
Claims (8)
1. the production method of a polysilicon is used the electrically heated silicon rod in reduction furnace, makes SiHCl
3At H
2Reduce in the atmosphere, resulting silicon deposits on the surface of silicon core and generates polysilicon, it is characterized in that increasing the surface-area of silicon core.
2. reduction furnace of producing polysilicon, comprise bonnet, chassis, feed-pipe, discharge nozzle, electrode and silicon core, this reduction furnace is airtight, opening for feed, discharge port and electrode are installed on the chassis, the silicon core is connected on the electrode, it is characterized in that the surface-area of described silicon core is greater than cylindrical surface-area.
3. the reduction furnace of production polysilicon according to claim 2 is characterized in that described silicon core is flaky.
4. the reduction furnace of production polysilicon according to claim 3 is characterized in that, the cross section of described sheet silicon core is flat-section, camber line shape, I-shaped or zig-zag.
5. the reduction furnace of production polysilicon according to claim 2 is characterized in that, described silicon core is a piped.
6. the reduction furnace of production polysilicon according to claim 5 is characterized in that, the annular of the cross section of described tubular silicon core for sealing or not sealing.
7. the reduction furnace of production polysilicon according to claim 2 is characterized in that, described silicon core is erose thin layer.
8. the reduction furnace of production polysilicon according to claim 2, the thickness that it is characterized in that described silicon core are uniform or uneven.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008100402413A CN101323449A (en) | 2008-07-04 | 2008-07-04 | Method and apparatus for enhancing polysilicon production |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008100402413A CN101323449A (en) | 2008-07-04 | 2008-07-04 | Method and apparatus for enhancing polysilicon production |
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|---|---|
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Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101979721A (en) * | 2010-09-19 | 2011-02-23 | 山东伟基炭科技有限公司 | Silicon core rods and silicon core structure for growth of polycrystalline silicon |
| CN101654249B (en) * | 2009-09-22 | 2011-04-06 | 江苏中能硅业科技发展有限公司 | Production method of polysilicon rod |
| CN102020277A (en) * | 2010-12-24 | 2011-04-20 | 中科协鑫（苏州）工业研究院有限公司 | Method for depositing polycrystalline silicon by adopting surface microstructure silicon core |
| CN101476153B (en) * | 2008-12-25 | 2011-12-07 | 青岛科技大学 | Reduction production process for polysilicon and reducing furnace for production thereof |
| CN102674360A (en) * | 2012-05-09 | 2012-09-19 | 天津大学 | Heat insulation inner liner of energy-saving polycrystalline silicon reduction furnace provided with polycrystalline silicon slice, and implementation method thereof |
| CN103160917A (en) * | 2011-12-09 | 2013-06-19 | 洛阳金诺机械工程有限公司 | Drawing die plate for hollow silicon core |
| CN103160916A (en) * | 2011-12-09 | 2013-06-19 | 洛阳金诺机械工程有限公司 | Drawing die plate for specially-shaped silicon core |
| CN103882519A (en) * | 2014-04-04 | 2014-06-25 | 天津环煜电子材料科技有限公司 | Silicon tube and preparation method for silicon-tube solar cell-grade polycrystalline silicon rod |
| CN105417542A (en) * | 2016-01-06 | 2016-03-23 | 洛阳金诺机械工程有限公司 | Hollow silicon core and silicon core assembly thereof |
| CN105460939A (en) * | 2016-02-04 | 2016-04-06 | 洛阳金诺机械工程有限公司 | Hollow silicon core and silicon core assembly thereof |
| CN106517211A (en) * | 2016-11-29 | 2017-03-22 | 陈生辉 | Polycrystalline silicon production device and application thereof |
| CN107673357A (en) * | 2017-10-17 | 2018-02-09 | 亚洲硅业（青海）有限公司 | A kind of reduction furnace silicon core and reduction furnace |
| CN110078079A (en) * | 2019-05-30 | 2019-08-02 | 重庆大全泰来电气有限公司 | A kind of electronic grade high-purity polycrystalline reduction starting device and starting method |
| CN110386605A (en) * | 2018-04-16 | 2019-10-29 | 内蒙古盾安光伏科技有限公司 | Solar-grade polysilicon product and its production method |
| CN110395735A (en) * | 2018-04-24 | 2019-11-01 | 内蒙古盾安光伏科技有限公司 | The also original production of polysilicon |
| CN110655083A (en) * | 2019-11-12 | 2020-01-07 | 四川永祥新能源有限公司 | Polycrystalline silicon reduction furnace |
| CN114314595A (en) * | 2021-12-31 | 2022-04-12 | 山东豪迈机械制造有限公司 | Polycrystalline silicon reduction vapor deposition method |
-
2008
- 2008-07-04 CN CNA2008100402413A patent/CN101323449A/en active Pending
Cited By (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101476153B (en) * | 2008-12-25 | 2011-12-07 | 青岛科技大学 | Reduction production process for polysilicon and reducing furnace for production thereof |
| CN101654249B (en) * | 2009-09-22 | 2011-04-06 | 江苏中能硅业科技发展有限公司 | Production method of polysilicon rod |
| CN101979721A (en) * | 2010-09-19 | 2011-02-23 | 山东伟基炭科技有限公司 | Silicon core rods and silicon core structure for growth of polycrystalline silicon |
| CN102020277A (en) * | 2010-12-24 | 2011-04-20 | 中科协鑫（苏州）工业研究院有限公司 | Method for depositing polycrystalline silicon by adopting surface microstructure silicon core |
| CN103160917A (en) * | 2011-12-09 | 2013-06-19 | 洛阳金诺机械工程有限公司 | Drawing die plate for hollow silicon core |
| CN103160916A (en) * | 2011-12-09 | 2013-06-19 | 洛阳金诺机械工程有限公司 | Drawing die plate for specially-shaped silicon core |
| CN102674360A (en) * | 2012-05-09 | 2012-09-19 | 天津大学 | Heat insulation inner liner of energy-saving polycrystalline silicon reduction furnace provided with polycrystalline silicon slice, and implementation method thereof |
| CN102674360B (en) * | 2012-05-09 | 2014-05-21 | 天津大学 | Heat insulation inner liner of energy-saving polycrystalline silicon reduction furnace provided with polycrystalline silicon slice, and implementation method thereof |
| CN103882519A (en) * | 2014-04-04 | 2014-06-25 | 天津环煜电子材料科技有限公司 | Silicon tube and preparation method for silicon-tube solar cell-grade polycrystalline silicon rod |
| CN105417542A (en) * | 2016-01-06 | 2016-03-23 | 洛阳金诺机械工程有限公司 | Hollow silicon core and silicon core assembly thereof |
| CN105460939A (en) * | 2016-02-04 | 2016-04-06 | 洛阳金诺机械工程有限公司 | Hollow silicon core and silicon core assembly thereof |
| CN106517211A (en) * | 2016-11-29 | 2017-03-22 | 陈生辉 | Polycrystalline silicon production device and application thereof |
| CN106517211B (en) * | 2016-11-29 | 2018-11-09 | 陈生辉 | A kind of device producing polysilicon and its application |
| CN107673357A (en) * | 2017-10-17 | 2018-02-09 | 亚洲硅业（青海）有限公司 | A kind of reduction furnace silicon core and reduction furnace |
| CN110386605A (en) * | 2018-04-16 | 2019-10-29 | 内蒙古盾安光伏科技有限公司 | Solar-grade polysilicon product and its production method |
| CN110395735A (en) * | 2018-04-24 | 2019-11-01 | 内蒙古盾安光伏科技有限公司 | The also original production of polysilicon |
| CN110078079A (en) * | 2019-05-30 | 2019-08-02 | 重庆大全泰来电气有限公司 | A kind of electronic grade high-purity polycrystalline reduction starting device and starting method |
| CN110655083A (en) * | 2019-11-12 | 2020-01-07 | 四川永祥新能源有限公司 | Polycrystalline silicon reduction furnace |
| CN110655083B (en) * | 2019-11-12 | 2021-04-27 | 四川永祥新能源有限公司 | Polycrystalline silicon reduction furnace |
| CN114314595A (en) * | 2021-12-31 | 2022-04-12 | 山东豪迈机械制造有限公司 | Polycrystalline silicon reduction vapor deposition method |
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Application publication date: 20081217 |